X-ray and Related Techniques Edited by Zainal Arifin Ahmad Muhd Ambar Yarmo Fauziah Haji Abdul Aziz Meor Yusoff Meor Sulaiman Badrol Ahmad Khairul Nizar Ismail Nik Akmar Rejab X-ray and Related Techniques Selected, peer reviewed papers from the International Conference on X-ray and Related Techniques in Research and Industry (IXCRI 2010) held at Langkawi Island, Malaysia from 9th to 10th of June 2010 Edited by Zainal Arifin Ahmad, Muhd Ambar Yarmo, Fauziah Haji Abdul Aziz, Meor Yusoff Meor Sulaiman, Badrol Ahmad, Khairul Nizar Ismail, Nik Akmar Rejab TRANS TECH PUBLICATIONS LTD Switzerland • UK • USA Copyright  2011 Trans Tech Publications Ltd, Switzerland All rights reserved. No part of the contents of this publication may be reproduced or transmitted in any form or by any means without the written permission of the publisher. Trans Tech Publications Ltd Laubisrutistr. 24 CH-8712 Stafa-Zurich Switzerland http://www.ttp.net Volume 173 of Advanced Materials Research ISSN 1022-6680 Full text available online at http://www.scientific.net Distributed worldwide by and in the Americas by Trans Tech Publications Ltd Trans Tech Publications Inc. Laubisrutistr. 24 PO Box 699, May Street CH-8712 Stafa-Zurich Enfield, NH 03748 Switzerland USA Phone: +1 (603) 632-7377 Fax: +41 (44) 922 10 33 Fax: +1 (603) 632-5611 e-mail: [email protected] e-mail: [email protected] Message from Guest Editor Dear readers and contributors, First of all, we are pleased to have an opportunity to thank and congratulate all our contributors from various parts of the world who take part in the International Conference on X-ray and Related Techniques in Research and Industry (IXCRI 2010) held at Langkawi Island, Malaysia from 9th to 10th of June 2010. ICXRI2010 was jointly organized by Universiti Malaysia Perlis (UniMAP) and Malaysian X-Ray Application Society (XApp). XApp is a Chapter in the Malaysian Nuclear Society (MNS). ICXRI conference is organized at every two years. ICXRI2012 will be held in Penang, Malaysia. ICXRI2010 is very pleased to receive 110 participants with 80 scientific papers and poster presentations. The topic covers mainly X-ray and other related researches. We are also delighted to select 34 quality scientific papers published in Advanced Materials Research 2010 by Trans Tech Publications Ltd. All papers were peer reviewed by experts from related fields. Therefore, the papers are of high standard and had satisfied the referee’s requirement. We believe that by following an international standard, we could maintain the quality and integrity of this ICXRI series. Finally, we would like once again to extend our invitation to all scientists and researchers in this field to participate in ICXRI2012 and publish their works in the internationally indexed publication. Guest Editors Professor Dr. Zainal Arifin Ahmad (Universiti Sains Malaysia) – Chief Professor Dr. Muhd Ambar Yarmo (Universiti Kebangsaan Malaysia) Professor Dr. Fauziah Haji Abdul Aziz (Universiti Malaysia Sabah) Dr. Meor Yusoff Meor Sulaiman (Malaysian Nuclear Agency) Dr. Badrol Ahmad (TNB Research) Dr. Khairul Nizar Ismail (Universiti Malaysia Perlis) Mr. Nik Akmar Rejab (Universiti Sains Malaysia) – Editorial Assistant INTERNATIONAL CONFERENCE ON X-RAY AND RELATED TECHNIQUES IN RESEARCH AND INDUSTRY (IXCRI 2010) CONFERENCE COMMITTEE MEMBERS Patron : Brig. Gen Prof. Dato’ Dr. Kamarudin Hussin (UniMAP) Honorary Advisor : Prof. Dr. Ambar Yarmo (UKM) : Prof. Dr .Fauziah Haji Abdul Aziz (UMS) Prof. Dr. Shamsul Baharin Jamaludin (UniMAP) Chairman : Prof. Dr. Zul Azhar Zahid Jamal (UniMAP) Joint Chairman : Prof. Dr. Zainal Arifin Ahmad (USM) Deputy Chairman : Assoc. Prof. Che Mohd Ruzaidi Ghazali (UniMAP) Secretary : Dr. Khairul Nizar Ismail (UniMAP) Honorary Secretary : Dr. Meor Yusoff Meor Sulaiman (Nuclear Malaysia) Treasurer : Mr. Murizam Darus (UniMAP) Honorary Treasurer : Dr. Badrol Ahmad (TNB Research) Organising Committee Members Director : Dr. Khairul Nizar Ismail Deputy Director : Dr. Khairel Rafezi Ahmad Secretary 1 : Mr. Faizul Che Pa Secretary 2 Mrs. Norazian Mohamed Noor Treasurer : Mr. Murizam Darus Secretariat : Mrs. Noraziana Parimin Mr. Faizul Che Pa Mrs. Masitah Hasan Mr. Nazerry Rosmandy Rahmat Mrs. Rushaniza Idawaty Ruslan Scientific : Dr. Mohd Nazree Derman Dr. Mazlee Mohd Noor Mr. Ragunathan Santiagoo Mrs. Nabilah Aminah Lutfi Wong Yee Shian Sponsorship : Mrs. Abdul Haqi Ibrahim Mrs. Shaiful Rizam Shamsudin Workshop : Dr. Khairel Rafezi Mrs. Murizam Darus Mrs. Abdul Haqi Ibrahim Technical : Mrs. Mohd Nazry Salleh Mrs. Roshasmawi Abdul Wahab Mrs. Che Zulzikrami Azner Abidin Food & Exhibition : Mrs. Noor Mariamadzliza Mohd Noor Mrs. Noor Azira Mohd Noor Mrs. Norwahidatul Azura Zainon Najib Publicity & website : Mrs. Salsuwanda Selamat Mrs. Khairuddin Md Isa Protocol & hospitality: Mrs. Mustafa Ismail Mrs. Zaheruddin Kasmuin Mrs. Mahyun Ab Wahab Mrs. Norinnar Md Nor Mrs. Suriati Aliza Ab Samad Mrs. Norsyahiza Hamzah Table of Contents Preface Committees Evaluation of Static Performance of Optoelectronic Semiconductor Devices under X-Rays Irradiation H.F.A. Amir and F.P. Chee 1 Analysis of Mineralogical Component of Palm Oil Fuel Ash with or without Unburned Carbon C. Chandara, K.A.M. Azizli, A.A. Zainal, S.F.S. Hashim and E. Sakai 7 The Effect of Sintering Temperature on Crystal Structure and Microstructure of Pr Ba MnO Ceramic 0.67 0.33 3 W.J. Kuen, L.K. Pah, A.H. Shaari, C.S. Kien and N.S. Wei 12 Effect of Al O /ZrO Hybrid on the Fracture Toughness and Flexural Properties of PMMA 2 3 2 Denture Base A.O. Alhareb and A.A. Zainal 18 Effect of Fractional Precipitation on Quality of Nanostructured Alumina Produced from Black Aluminium Dross Waste Y.M.S. Meor, M. Masliana and P. Wilfred 24 Effect of Particle Sizes of Magnesium Oxide on Zirconia Toughened Alumina Vickers Hardness A.Z.A. Azhar, F.T. Kong, M. Hasmaliza, M.M. Ratnam and A.A. Zainal 29 Development of a Simultaneous Elemental Analysis for Clay Minerals Using EDXRF Y.M.S. Meor, M. Masliana, P. Wilfred and D. Parimala 35 Structural Properties Studies of GaN on 6H-SiC by Means of X-Ray Diffraction Technique C.C. Guan, S.S. Ng, Z. Hassan and H. Abu Hassan 40 Effects of Different Gloss Firing Temperature on the Crystallization of Zinc-Based Crystal Glaze A.R. Jamaludin, S.R. Kasim and A.A. Zainal 44 Hydrogenolysis of Glycerol to Propanediols over Nano-Ru/C Catalyst with Ionic Liquid Addition A. Alias, H. Noraini and M.A. Yarmo 49 Characterization of Porous Anodic Aluminium Oxide Film on Aluminium Templates Formed in Anodizing Process A.W. Juyana and M.N. Derman 55 Effects of Calcination Temperature on the Phase Formation and Microstructure of Barium Zinc Tantalate H. Jaafar, A.A. Zainal and M.F. Ain 61 Phase Analysis of Mechanically Alloyed In Situ Copper-Tungsten Carbide Composite H. Zuhailawati, Y. Mahani and O. Radzali 67 Application of Small-Angle X-Ray Scattering to Predict Microfibril Angle in Acacia mangium Wood T.A. Tamer, A.A.H. Fauziah and R. Shahidan 72 X-Ray Powder Diffraction Study on the MgB Superconductor Reacted with Nano-SiC: The 2 Effects of Sintering Temperature T.K. Yong, T.K. Lee, L.K. Pah, A.H. Shaari, T.K. Ban and C.S. Kien 78 Heating Rate Effects on Properties of Powder Metallurgy Fe-Cr-Al O Composites 2 3 S. Saidatulakmar, J.B. Shamsul, H. Zuhailawati and A.A. Zainal 84 Growth of Cu-Zn and Cu Zn Intermetallic Compounds in the Sn-9Zn/Cu Joint during 5 5 8 Liquid State Aging M. Ramani, R.A. Zaman, Z.Z. Abidin, F.A. Asmawati and M.N. Derman 90 Effect of La O Additions on Microstructure, Morphology and Pressure Sensing Behaviour 2 3 of PZT Based Ceramics Sintered in Al O Environment 2 3 M.H. Haji Jumali, Y.Y. Tio, R. Norhashimah, M.S. Muhammad and M. Yahaya 96 The Effect of Water Content on the Formation of TiO Nanotubes in Ethylene Glycol 2 K.A. Saharudin and S. Sreekantan 102 b X-ray and Related Techniques Characterization of Co-Cr-Mo (F-75) Alloy Produced by Solid State Sintering C.D. Zuraidawani, J.B. Shamsul and F. Bari 106 Formation of Titanium Carbide Reinforced Copper Matrix Composite by In Situ Processing M.S. Nur Hawadah, H. Zuhailawati and O. Radzali 111 Formation of TiC-Reinforced Iron Based Composite through Carbothermal Reduction of Hematite and Anatase M. Salihin Hassin, H. Zuhailawati and P. Samayamutthirian 116 Stabilization of Magnetite Nano Iron Oxide with a Series of Novel Surfactants C. Swee Yee, S.C. Hong Seng, W. Zurina Samad, D. Panchanan Pramanik, N.I. Nik Yusoff, J. Salimon and M.A. Yarmo 122 Characterization of Fluoro-Doped Tin Oxide Films Prepared by Newly Approached of Inkjet Printing Methods W.Z. Samad, M.A. Yarmo and M.M. Salleh 128 Effect of Ruthenium Metal Precursors Supported on Bentonite in Hydrogenolysis Glycerol H. Noraini, A. Alias, W.Z. Samad, M.B. Kassim and M.A. Yarmo 134 New Silica Supported HClO as Efficient Catalysts for Estolide Synthesis from Oleic Acid 4 N.A.M. Nordin, N.F. Adnan, A. Alias, W.N.R. Wan Isahak, J. Salimon, M.A. Yarmo and R.A. Kamaruddin 140 Synthetic Hydrotalcite Prepared from Modified Combustion Method Using Glucose as Fuel M.R. Othman, C. Martunus and W.J.N. Fernando 146 Effects of the Polyvinyl Alcohol (PVA) on the Synthesis of Alumina Fibers through Electrospinning Technique R. Abdullah, S. Sreekantan and M. Hasmaliza 150 Selective Oxidation of Glycerol over Titania Supported AuPd Bimetallic Catalysts A.H. Ahmad Nadzri, H. Noraini, A. Alias, J. Salimon and M.A. Yarmo 155 Crystallite Size of Chitosan Capped Zinc Sulfide Nanoparticles Synthesized via Wet Chemical Route E.Y. Lin Foo and S.D. Hutagalung 161 La-Doped CaCu Ti O Ceramics Sintered in Argon Environment 3 4 12 N.S. Afzan Sharif, S.D. Hutagalung and Z.A. Ahmad 167 Formation and Mechanistic Study of Self-Ordering ZrO Nanotubes by Anodic Oxidation 2 S. Ismail, Z. Lockman, A.A. Zainal and A. Berenov 173 Calcium Oxide as Potential Catalyst for Gasification of Palm Oil Empty Fruit Bunch to Produce Syngas K. Ismail, M.A. Yarmo, Y.H. Taufiq-Yap and A. Ahmad 178 Effect of pH on TiO Nanoparticles via Sol-Gel Method 2 S.A. Ibrahim and S. Sreekantan 184 Rietveld Quantitative Phase Analysis of Non-Stoichiometric Cordierite Synthesised from Mainly Talc and Kaolin: Effect of Sintering Temperature J. Banjuraizah, M. Hasmaliza and A.A. Zainal 190 Characterization and Phase Evolution of Cordierite Based Glass Synthesis from Pure Oxide and Minerals J. Banjuraizah, M. Hasmaliza and A.A. Zainal 196 © (2011) Trans Tech Publications, Switzerland doi:10.4028/www.scientific.net/AMR.173.1 Evaluation of Static Performance of Optoelectronic Semiconductor Devices under X-rays Irradiation HAIDER F. ABDUL AMIR a and FUEI PIEN CHEEb School of Science and Technology, Universiti Malaysia Sabah, 88400 Kota Kinabalu, Sabah, Malaysia. [email protected], [email protected] Keywords: optoelectronic, x-rays, Total Ionizing Dose (TID). Abstract. In this research, optoelectronic devices consisted of an infrared light emitting diode and a phototransistor with no special handling or third party-packaging were irradiated to ionizing radiation utilizing x-rays. It was found that the devices under test (DUTs) undergo performance degradation in their functional parameters during exposure to x-rays. These damaging effects are depending on their current drives and also the Total Ionizing Dose (TID) absorbed. The TID effects by x-rays are cumulative and gradually take place throughout the lifecycle of the devices exposed to radiation. Introduction The high-altitude nuclear test Starfish Prime was conducted by the United States of America on July 9, 1962 above Johnston Island in the Pacific Ocean. This detonation was then followed by several similar Soviet nuclear events in October [1]. The nuclear contamination as a consequential of these activities produced adequate electronic pumping on the Van Allen belts [2]. The Telstar 1 communication satellite failed not long after that as a result of the detrimental effects from the radiation in the Van Allen belts. This then rose up the necessary of intensive study on the effects of ionizing radiation on semiconductor devices. The radiation environment that a semiconductor device encounter either at exoatmospheric or endoatmospheric [3] can be generally divided into five which are the space environment, high- energy physic experiments, nuclear environment, natural environments as well as process induced radiation. Each of these radiation environments possesses its own spectrum of particles and energy distribution. Therefore, several evaluation tests have to be done on the selected devices before they are used for the intended application. These evaluation tests consisted of two key components: I) characterization of the radiation environment depending on the intended application and II) analyzing the radiation tolerance based on the performing parameters and manufacturing technology. The radiation effects on semiconductor devices can be categorized into four: Electromagnetic Pulse (EMP) effects, high dose rate effects, Single Event Upsets (SEU) and total dose effects [3]. EMP effects arise from the incidence of an electromagnetic wave on the semiconductor devices [4]. The resulting electric and magnetic fields from EMP may interact with electrical and electronic systems to produce damaging current and voltage surges. This effect is temporary and the system can bounce back to normal operating condition as soon as the radiation pulse terminates. Dose rate effects, however, induce a temporary failure of circuit operation which lasts as long as the radiation pulse exists. As for SEUs, it is the radiation-induced errors in semiconductor devices caused when charged particles lose energy by ionizing the medium through which they pass, leaving behind a wake of electron-hole pairs. This type of error is temporary and therefore, no permanent damage to the circuits [4]. Total dose effects, however, are permanent damage effects. Total dose effects are often associated with bulk defect creation or accumulation of trapped charge at the oxide region [5]. Consequently, the performance of semiconductor devices depends ultimately on the presence of defects. Total dose effects for optoelectronic devices are normally serve as the basis for parts 2 X-ray and Related Techniques procurement decisions. Total dose effects testing typically utilize ionizing radiation. Ionizing radiation can lead to failure in semiconductor based electronic devices due to rapid ionization events, or cause a slow continuous degradation in the performance of the devices. The work reported here primarily deals with this type of radiation damage due to TID. This paper will present the x-ray effects on optoelectronic DUT, the radiation response of DUT and radiation tolerance of DUT to fulfill the system’s operations. Experimental Details Test Device Descriptions. The DUT used in this test consisted of a Plastic Infrared Light Emitting Diode (QEE 113) coupled to a Plastic Silicon Infrared Phototransistor (QSE 113). The QEE113 is a 940 nm Gallium Arsenide (GaAs) LED encapsulated in a medium wide angle and clear epoxy plastic side looker package. The QSE113, however, is a NPN silicon (Si) phototransistor encapsulated in a wide angle, infrared transparent and black plastic side looker package. Optoelectronic devices are being discussed as they play an important role in optical satellite telecommunications and sensing technology. They are widely used especially in providing electrical isolation between circuits such as sub-system to sub-system interfaces for space light designing’s [6]. These photonics systems are ideal for applications in space system due to their high bandwidth and speed of operation, the immunity for electromagnetic interference, low power consumption and cost, yet, of high reliability [7]. X-ray Exposure. In this X-ray source equipment (model Toshiba KXO-12R), an exposure time selector and a milliampere-seconds (mAs) relay are connected to a computer. This controls the x- ray tube current according to the selected mAs product. The operated potential for this x-ray machine is 40 kV and the exposure milliampere (mA) was 100 mA. The total radiation output for an exposure period is proportional to the mAs. Therefore, the absorbed dose of the DUTs could be increased by raising the mAs. Distance from the focal point of the x-ray tube to the irradiated DUT was fixed to 50 cm. This was as the radiation intensity varies approximately inversely with the square of the distance. The changes in the output parameter of the DUTs were recorded and monitored at every increasing level of mAs. Test Setup. The radiation testing on the electronic devices consisted of multi-parameter test with different exposure levels. Ambient temperature throughout the test was 25±3ºC. Before the irradiation process, a control test of 72 hours was performed on the DUTs. This was known as the pre-irradiation testing. Only devices which had passed the electrical specifications as defined in the test plan were submitted to radiation testing. The diagram of the test setup was as shown in Fig. 1. The information and status of the DUT were transmitted through the driver circuit based on an analog to digital converter (ADC) circuit into the PC. This driver board served as the power supply to the DUT. Moreover, it was operated as a measuring tool to real time monitor the changes in the collector current (I ) of the reference phototransistor at various dose levels. The LED forward C current (I ) was acted as changing parameter in this experiment. Cables used to connect this system F should never be led to any serious distortion of the shape of signals or the degradation of reliability in data communication.