Table Of Content

ELSEVIER Thin Solid Films 367 (2000) 306-307 www.elsevier.com/locate/tsf Author Index of Volume 367 Adamowicz, B., 180 Gornik, E., 267 Kubica, J.M., 290 Orsila, S., 260 Adamowski, J., 93, 97 Griin, M., 68 Kurabayashi, T., 13 Osten, H.J., 101 Alferov, Zh.I., 40, 235 Griesche, J., 159 Kurtz, E., 68 Anisimov, O.V., 199 Grundmann, M., 235 Kuwano, S., 149 Podor, B., 89 Aseev, A.L., 142 Grzegory, I., 281 Kyrychenko, F., 210, Parker, E.H.C., 176, 250 Guillot, C., 193 Parry, C.P., 176 Bacchin, G., 6 Gusev, S.A., 171 Larsen, A.N., 120 Pchelyakov, O.P., 75 Baczewski, L.T., 189 Guziewicz, E., 193 Latyshev, A.V., 142 Perez-Rodriguez, A., 176 Bak-Misiuk, J., 165, 232 Ledentsov, N.N., 40, Pessa, M., 260 Bakshi, P., 295 Haapamaa, J., 260 Lesiak-Orlowska, B., 193 Piatkowski, P., 134 Banshchikov, A.G., 199 Hansen, J.L., 120 Liliental-Weber, Z., 277 Ploner, G., 267 Barcz, A., 220 Hansen, L., 85 Litvinov, D., 40, 68 Ploog, K.H., 32 Barrett, H., 193 Hasegawa, H., 58, 180 Lobanov, D.N., 171 Pohl, U.W., 40 Bassas, J.M., 176 Heinrichsdorff, F., 235 Lundin, W.V., 40 Porowski, S., 281 Bednarek, S., 93, 97 Heitz, R., 40 Postnikov, V.V., 171 Bensing, F., 85 Herman, M.A., | Mackowski, S., 210, 223 Pridachin, D.N., 203 Bimberg, D., 40, 235 Hingerl, K., 216 Magnea, N., 48 Przestawski, T., 232 Bolkhovityanov, Y.B., 75 Hoffmann, A., 40 Maksymowicz, A.Z., 28 Bonanni, A., 216 Hong, S.K., 68 Malarz, K., 28 Qiu, X.G., 149 Borkovskaya, L.V., 184 Horvath, Z.J., 89 Martrou, D., 48 Bugajski, M., 290 Maximov, M.V., 235 Ratajczak, J., 290 Burdina, L.D., 203 Ilver, L., 165 McClelland, J.J., 25 Rauch, C., 267 Melanen, P., 260 Reginski, K., 232, 290 Celotta, R.J., 25 Jakiela, R., 220 Meyer, C., 189 Rodt, S., 40 Chtcherbatchev, K.D., 176 Janik, E Mironov, O.A., 176 Romano-Rodriguez, A., 176 Cooke, G.A., 176 Johnson, R.L., 193 Moisseeva, M.M., 199 Rosenauer, A., 40 Czuba, P., 134 Joyce, B.A., 3 Moldavskaya, L.D., 171 Ruvimov, S., 277 Morante, J.R., 176 Diduszko, R., 168 Kalinowski, R., 189 Mosca, R., 89 Saarinen, M., 260 Dolgov, I.V., 171 Kaniewski, J., 232 Mroz, A., 126 Sadof’ev, Y.G., 184 Domagala, J.Z., 165 Kanski, J., 165 Mroz, S., 126 Sadowski, J., 165, 168, 193 Domuchowski, V., 168 Karczewski, G., 210, 220 Muszalski, J., 290, 299 Sakharov, A.V., 40 Dowsett, M.G., 176 Katcki, J., 290 Sakurai, T., 149 Dozsa, L., 89 Kempa, K., 295 Nabetani, Y., 277 Sapko, S.Y., 184 Drozdov, Y.N., 171 Klad’ko, V.P., 184 Nadolny, A.J., 168 Sasaki, A., 277 Dvurechenskii, A.V., 75 Klingshirn, C., 68 Nasimov, D.A., 142 Savenko, V.N., 142 Kolesnik, S., 165 Nemesics, A., 89, 302 Savolainen, P., 260 Engelhardt, R., 40 Kolodziej, J., 134 Nikiforov, A.I., 75 Schmidt, M., 68 Kop’ev, P.S., 235 Nishinaga, T., 6 Segawa, Y., 149 Filatov, D.O., 171 Korecki, P., 134 Nishizawa, J.-I., 13 Semenova, G.N., 184 Franchi, S., 89 Korsunskaya, N.E., 184 Notzel, R., 32 Semtsiv, M.P., 184 Frigeri, P., 89 Kossut, J., 210, 223 Novikov, A.V., 171 Seweryn, A., 220 Fulgoni, D.J.F., 176 Kovsh, A.R., 235 Shechovtsov, L.V., 184 Kowalski, B.J., 193 Ochalski, T., 290 Shen, J., 68 Gaiduk, P.I., 120 Krasil’ nik, Z.F., 171 Ohno, T., 149 Shernyakov, Y.M., 235 Gerthsen, D., 40, 68 Krestnikov, I.L., 40 Oka, T., 68 Sidorov, Y.G., 203 Gombia, E., 89 Krupin, A.V., 199 Orlowski, B.A., 193 Sipila, P., 260 PII: $0040-6090(00)00961-5 ELSEVIER Thin Solid Films 367 (2000) 306-307 www.elsevier.com/locate/tsf Author Index of Volume 367 Adamowicz, B., 180 Gornik, E., 267 Kubica, J.M., 290 Orsila, S., 260 Adamowski, J., 93, 97 Griin, M., 68 Kurabayashi, T., 13 Osten, H.J., 101 Alferov, Zh.I., 40, 235 Griesche, J., 159 Kurtz, E., 68 Anisimov, O.V., 199 Grundmann, M., 235 Kuwano, S., 149 Podor, B., 89 Aseev, A.L., 142 Grzegory, I., 281 Kyrychenko, F., 210, Parker, E.H.C., 176, 250 Guillot, C., 193 Parry, C.P., 176 Bacchin, G., 6 Gusev, S.A., 171 Larsen, A.N., 120 Pchelyakov, O.P., 75 Baczewski, L.T., 189 Guziewicz, E., 193 Latyshev, A.V., 142 Perez-Rodriguez, A., 176 Bak-Misiuk, J., 165, 232 Ledentsov, N.N., 40, Pessa, M., 260 Bakshi, P., 295 Haapamaa, J., 260 Lesiak-Orlowska, B., 193 Piatkowski, P., 134 Banshchikov, A.G., 199 Hansen, J.L., 120 Liliental-Weber, Z., 277 Ploner, G., 267 Barcz, A., 220 Hansen, L., 85 Litvinov, D., 40, 68 Ploog, K.H., 32 Barrett, H., 193 Hasegawa, H., 58, 180 Lobanov, D.N., 171 Pohl, U.W., 40 Bassas, J.M., 176 Heinrichsdorff, F., 235 Lundin, W.V., 40 Porowski, S., 281 Bednarek, S., 93, 97 Heitz, R., 40 Postnikov, V.V., 171 Bensing, F., 85 Herman, M.A., | Mackowski, S., 210, 223 Pridachin, D.N., 203 Bimberg, D., 40, 235 Hingerl, K., 216 Magnea, N., 48 Przestawski, T., 232 Bolkhovityanov, Y.B., 75 Hoffmann, A., 40 Maksymowicz, A.Z., 28 Bonanni, A., 216 Hong, S.K., 68 Malarz, K., 28 Qiu, X.G., 149 Borkovskaya, L.V., 184 Horvath, Z.J., 89 Martrou, D., 48 Bugajski, M., 290 Maximov, M.V., 235 Ratajczak, J., 290 Burdina, L.D., 203 Ilver, L., 165 McClelland, J.J., 25 Rauch, C., 267 Melanen, P., 260 Reginski, K., 232, 290 Celotta, R.J., 25 Jakiela, R., 220 Meyer, C., 189 Rodt, S., 40 Chtcherbatchev, K.D., 176 Janik, E Mironov, O.A., 176 Romano-Rodriguez, A., 176 Cooke, G.A., 176 Johnson, R.L., 193 Moisseeva, M.M., 199 Rosenauer, A., 40 Czuba, P., 134 Joyce, B.A., 3 Moldavskaya, L.D., 171 Ruvimov, S., 277 Morante, J.R., 176 Diduszko, R., 168 Kalinowski, R., 189 Mosca, R., 89 Saarinen, M., 260 Dolgov, I.V., 171 Kaniewski, J., 232 Mroz, A., 126 Sadof’ev, Y.G., 184 Domagala, J.Z., 165 Kanski, J., 165 Mroz, S., 126 Sadowski, J., 165, 168, 193 Domuchowski, V., 168 Karczewski, G., 210, 220 Muszalski, J., 290, 299 Sakharov, A.V., 40 Dowsett, M.G., 176 Katcki, J., 290 Sakurai, T., 149 Dozsa, L., 89 Kempa, K., 295 Nabetani, Y., 277 Sapko, S.Y., 184 Drozdov, Y.N., 171 Klad’ko, V.P., 184 Nadolny, A.J., 168 Sasaki, A., 277 Dvurechenskii, A.V., 75 Klingshirn, C., 68 Nasimov, D.A., 142 Savenko, V.N., 142 Kolesnik, S., 165 Nemesics, A., 89, 302 Savolainen, P., 260 Engelhardt, R., 40 Kolodziej, J., 134 Nikiforov, A.I., 75 Schmidt, M., 68 Kop’ev, P.S., 235 Nishinaga, T., 6 Segawa, Y., 149 Filatov, D.O., 171 Korecki, P., 134 Nishizawa, J.-I., 13 Semenova, G.N., 184 Franchi, S., 89 Korsunskaya, N.E., 184 Notzel, R., 32 Semtsiv, M.P., 184 Frigeri, P., 89 Kossut, J., 210, 223 Novikov, A.V., 171 Seweryn, A., 220 Fulgoni, D.J.F., 176 Kovsh, A.R., 235 Shechovtsov, L.V., 184 Kowalski, B.J., 193 Ochalski, T., 290 Shen, J., 68 Gaiduk, P.I., 120 Krasil’ nik, Z.F., 171 Ohno, T., 149 Shernyakov, Y.M., 235 Gerthsen, D., 40, 68 Krestnikov, I.L., 40 Oka, T., 68 Sidorov, Y.G., 203 Gombia, E., 89 Krupin, A.V., 199 Orlowski, B.A., 193 Sipila, P., 260 PII: $0040-6090(00)00961-5 Author index Sitter, H., 216 Toivonen, M., 260 Vilokkinen, V., 260 Xue, Q.K., 149 Slupinski, T., 227 Tsatsul’nikov, A.F., 235 Voigtlander, B., 75 Xue, Q.Z., 149 Sokolov, N.S., 112, Tsong, I.S.T., 149 Volovik, B.V., 235 Stifter, D., 216 Vostokov, N.V., 171 Yakimov, A.L., 75 Strafburg, M., 40 Ulin, V.P., 199 Yakovlev, N.L., 199 Strasser, G., 267 Usikov, A.S., 40 Waag, A., 85 Yakushev, M.V., 203 Suturin, S.M., 112 Ustinov, V.M., 235 Washburn, J., 277 Yao, T., 68 Swiatek, K., 165 Uusimaa, P., 260 Wawro, A., 189 Zbroszczyk, M., 290 Szafran, B., 93, 97 Weber, E.R., 277 Zhukov, A.E., 235 Szamota-Sadowska, K., 193 Van Tuyen, V., 89 Whall, T.E., 250 Zielinska-Rohozinska, E., 227 Szymonski, M., 134 Varavin, V.S., 203 Wojtowicz, T., 210, 220 Venger, E.F., 184 Wolkenberg, A., 232 sella A u ELSEVIER Thin Solid Films 367 (2000) 308-312 www.elsevier.com/locate/tsf Subject Index of Volume 367 AlGaAs photoluminescence Current—voltage characteristics Analysis of photoluminescence efficiency and surface recom- MBE-grown gate-controlled quantum-dot nanostructure and its bination velocity of MBE-grown AlGaAs layers, 180 current—voltage characteristics, 97 Atom optics Laser-focused atomic deposition — nanofabrication via atom Device with side-gated quantum wires optics, 25 Transport spectroscopy of quantum wires and superlattices, 267 Atomic force microscopy Diffusion processes in cation sublattice MBE-growth peculiarities of fluoride (CdF,—-CaF,) thin film Cation diffusion in MBE-grown CdTe layers, 220 structures, 112 Diluted magnetic semiconductors The elastic strain and composition of self-assembled GeSi Reflectance difference spectroscopy: a powerful tool for in situ islands on Si(001), 171 investigations of II-VI compounds with Mn, 216 Lateral and depth inhomogeneities in Zn-based heterostructures Directional Auger electron spectroscopy grown on GaAs by MBE, 184 Auger electron spectroscopy in the investigation of ultrathin Manganese fluoride epitaxial growth on Si(111), 199 films in molecular beam epitaxy, 126 Atomic layer epitaxy Dopant diffusion in Si,_,-,Ge,C, Equilibrium shape of steps and islands on polar CdTe(001) MBE growth and properties of supersaturated, carbon-contain- surface: application to the preparation of self organized tem- ing silicon/germanium alloys on Si(001), 101 plates for growth of nanostructures, 48 Doping of GaN crystals GaN substrates for molecular beam epitaxy growth of homo- Capacitance spectroscopy epitaxial structures, 281 Single-electron charging of self assembled quantum dots, 93 Carbon-containing Si/Ge alloy Electron holography MBE growth and properties of supersaturated, carbon-contain- Structure and electronic properties of ionic nano-layers MBE- ing silicon/germanium alloys on Si(001), 101 grown on III—V semiconductors, 134 CdTe/ZnTe multiple quantum wells Electron transport spectroscopy Influence of MBE growth conditions on optical properties of Transport spectroscopy of quantum wires and superlattices, 267 CdTe/ZnTe quantum structures, 210 Epitaxial films Characterization of molecular beam epitaxy grown films Manganese fluoride epitaxial growth on Si(111), 199 Auger electron spectroscopy in the investigation of ultrathin films in molecular beam epitaxy, 126 Fermi level pinning Charge carriers transport in mechanically relaxed epilayers MBE growth and applications of silicon interface control Growth and transport properties of relaxed epilayers of InAs on layers, 58 GaAs, 232 First-principles total-energy calculations CMOS technology Imaging wurtzite GaN surfaces by molecular beam epitaxy- SiGe — heterostructures for CMOS technology, 250 scanning tunneling microscopy, 149 Computer simulations A simple solid-on-solid model of epitaxial thin films growth: GaAs tera-hertz devices grown by molecular layer epitaxy inhomogeneous multilayered sandwiches, 28 Molecular layer epitaxy, 13 Computer simulations of the transport and electromagnetic GaAs:Te solid solution properties of MBE-grown quantum structures, 295 Local order of Te impurity atoms and free electron concentra- Critical thickness of the epilayer tion in heavily doped GaAs:Te, 227 Correlation between the critical layer thickness and the decay- Gadolinium epitaxial thin films time constant of RHEED oscillations in strained Magnetic anisotropy in MBE-grown epitaxial gadolinium ultra- In,Ga,_,As/GaAs structures, 302 thin films, 189 Crystallization of GaN under high N, pressure Germanium GaN substrates for molecular beam epitaxy growth of homo- Molecular beam epitaxy of silicon—-germanium nanostructures, epitaxial structures, 281 75 PII: S0040-6090(00)00962-7 Subject index Gold adsorption on Si(111) surface Laser-focused atom deposition UHV-REM study of gold adsorption on the Si(111) surface, Laser-focused atomic deposition - nanofabrication via atom 142 optics, 25 Layer-by-layer growth of ultrathin films Hall effect measurements Auger electron spectroscopy in the investigation of ultrathin Growth and transport properties of relaxed epilayers of InAs on films in molecular beam epitaxy, 126 GaAs, 232 Local order of impurities Heavily doped semiconductors Local order of Te impurity atoms and free electron concentra- Local order of Te impurity atoms and free electron concentra- tion in heavily doped GaAs:Te, 227 tion in heavily doped GaAs:Te, 227 Low energy electron diffraction Heteroepitaxy Structure and electronic properties of ionic nano-layers MBE- Molecular beam epitaxy of silicon—-germanium nanostructures, grown on III-V semiconductors, 134 75 Low-temperature atomic layer epitaxy Heteroepitaxy by molecular beam epitaxy Formation and properties of self-organized II-VI quantum MBE growth and applications of silicon interface control islands, 68 layers, 58 Heteroepitaxy of II-VI compounds The heteroepitaxy of II-VI compounds on the non-isovalent Magnetic phase transitions substrates (ZnTe/Si), 203 Structural properties of MBE grown GaMnAs layers, 165 High resolution X-ray diffraction Magnetic structures Influence of Mn content in MBE-grown Sn,_,Mn,Te layers on A simple solid-on-solid model of epitaxial thin films growth: their structural properties studied by X-ray diffraction, 168 inhomogeneous multilayered sandwiches, 28 High-resolution X-ray diffractometry Magnetization in thin films Growth and transport properties of relaxed epilayers of InAs on Magnetic anisotropy in MBE-grown epitaxial gadolinium ultra- GaAs, 232 thin films, 189 Historical perspective of molecular beam epitaxy Magneto-optical properties of quantum wells Fundamental growth processes in the molecular beam epitaxy Magneto-optical properties of CdTe quantum wells with tern- of III-V compounds — an historical perspective, 3 ary MgMnTe and quaternary CdMnMgTe barriers, 223 Homoepitaxy and heteroepitaxy by molecular beam epitaxy Material contrast in reflection high-energy electron diffraction pat- Fundamental growth processes in the molecular beam epitaxy terns of III-V compounds ~ an historical perspective, 3 Investigations on the growth mechanism of wide-gap II-VI Hut-clusters and dome-islands semiconductors by means of reflection high energy electron The elastic strain and composition of self-assembled GeSi diffraction, 159 islands on Si(001), 171 Mechanisms of molecular beam epitaxy growth of Si, ,Ge, alloys Strain-relaxed SiGe/Si heteroepitaxial structures of low thread- III-V semiconductor compounds ing-dislocation density, 120 Structure and electronic properties of ionic nano-layers MBE- Metallic thin films grown on III-V semiconductors, 134 Magnetic anisotropy in MBE-grown epitaxial gadolinium ultra- III-V semiconductors thin films, 189 Uniform III-V semiconductor quantum wire and quantum dot MnF, growth by molecular beam epitaxy on CaF,/Si(111) sub- arrays by natural self-faceting on patterned substrates, 32 strates InAs and Si quantum dots Manganese fluoride epitaxial growth on Si(111), 199 InAs quantum dots embedded in silicon, 85 Molecular beam epitaxy Injection lasers Uniform III-V semiconductor quantum wire and quantum dot Quantum dot lasers: breakthrough in optoelectronics, 235 arrays by natural self-faceting on patterned substrates, 32 Intensity oscillations of the reflection high energy electron diffrac- Molecular beam epitaxy of silicon—germanium nanostructures, tion specular beam 75 Correlation between the critical layer thickness and the decay- InAs quantum dots embedded in silicon, 85 time constant of RHEED oscillations in strained Structure and electronic properties of ionic nano-layers MBE- In,Ga,_,As/GaAs structures, 302 grown on III-V semiconductors, 134 Interfaces Lateral and depth inhomogeneities in Zn-based heterostructures A simple solid-on-solid model of epitaxial thin films growth: grown on GaAs by MBE, 184 inhomogeneous multilayered sandwiches, 28 The heteroepitaxy of II-VI compounds on the non-isovalent Interface control layers substrates (ZnTe/Si), 203 MBE growth and applications of silicon interface control Pyrometric interferometry during MBE growth of laser hetero- layers, 58 structures, 299 Intra-ion transitions Molecular beam epitaxial growth Reflectance difference spectroscopy: a powerful tool for in situ MBE growth and properties of supersaturated, carbon-contain- investigations of II-VI compounds with Mn, 216 ing silicon/germanium alloys on Si(001), 101 310 Subject index Molecular beam epitaxial growth interruption effects Molecular beam epitaxy of GaAs, ALGaAs, ALAs Influence of MBE growth conditions on optical properties of Selective area MBE of GaAs, A1As and their alloys by periodic CdTe/ZnTe quantum structures, 210 supply epitaxy, 6 Molecular beam epitaxy growth mechanisms of thin film structures Molecular beam technology growth of Bragg reflectors MBE-growth peculiarities of fluoride (CdF,—CaF,) thin film MBE growth of planar microcavities with distributed Bragg structures, 112 reflectors, 290 Molecular beam epitaxial growth modes Molecular layer epitaxy of GaAs, InP and Si Transition thickness of semiconductor heteroepitaxy, 277 Molecular layer epitaxy, 13 Molecular beam epitaxy growth of CdTe Cation diffusion in MBE-grown CdTe layers, 220 Nanostructures Molecular beam epitaxial growth of CdTe quantum wells Reflectance difference spectroscopy: a powerful tool for in situ Magneto-optical properties of CdTe quantum wells with tern- investigations of II-VI compounds with Mn, 216 ary MgMnTe and quaternary CdMnMgTe barriers, 223 Nanotechnology Molecular beam epitaxy growth of CdYbTe Laser-focused atomic deposition — nanofabrication via atom Electronic structure of MBE grown CdYbTe: photoemission studies, 193 optics, 25 Equilibrium shape of steps and islands on polar CdTe(001) Molecular beam epitaxy growth of embedded heterostructures surface: application to the preparation of self organized tem- Growth and electrical characteristics of InAs/GaAs quantum plates for growth of nanostructures, 48 well and quantum dot structures, 89 Molecular beam epitaxy growth of GalnP/AlGalInP and GalnP/ GaAs heterostructures Optoelectronics Growth of resonant cavity quantum well light emitting diodes InAs quantum dots embedded in silicon, 85 and two-junction solar cells by solid source molecular beam epitaxy, 260 Passivation by interface control layer Molecular beam epitaxy growth of GaMnAs Analysis of photoluminescence efficiency and surface recom- Structural properties of MBE grown GaMnAs layers, 165 bination velocity of MBE-grown AlGaAs layers, 180 Molecular beam epitaxial growth of GeSi nanoislands Patterned growth The elastic strain and composition of self-assembled GeSi Uniform III-V semiconductor quantum wire and quantum dot islands on Si(001), 171 arrays by natural self-faceting on patterned substrates, 32 Molecular beam epitaxial growth of homoepitaxial GaN layers Periodic supply epitaxy GaN substrates for molecular beam epitaxy growth of homo- Selective area MBE of GaAs, AlAs and their alloys by periodic epitaxial structures, 281 supply epitaxy, 6 Molecular beam epitaxial growth of II-VI compounds Perpendicular magnetic anisotropy Investigations on the growth mechanism of wide-gap II-VI Magnetic anisotropy in MBE-grown epitaxial gadolinium ultra- semiconductors by means of reflection high energy electron thin films, 189 diffraction, 159 Photoluminescence Molecular beam epitaxial growth of InAs on GaAs Influence of MBE growth conditions on optical properties of Growth and transport properties of relaxed epilayers of InAs on CdTe/ZnTe quantum structures, 210 GaAs, 232 Planar microcavities Molecular beam epitaxial growth of SnMnTe MBE growth of planar microcavities with distributed Bragg Influence of Mn content in MBE-grown Sn,_,Mn,Te layers on reflectors, 290 their structural properties studied by X-ray diffraction, 168 Pseudomorphic Si/SiGe/Si heterostructures Molecular beam epitaxial growth of strained heterostructures SiGe — heterostructures for CMOS technology, 250 Correlation between the critical layer thickness and the decay- Pyrometric interferometry time constant of RHEED oscillations in strained Pyrometric interferometry during MBE growth of laser hetero- In,Ga,_,As/GaAs structures, 302 structures, 299 Molecular beam epitaxial growth physics Fundamental growth processes in the molecular beam epitaxy of III-V compounds — an historical perspective, 3 Quantum dots Molecular beam epitaxial multi-chamber growth/processing/char- Uniform III-V semiconductor quantum wire and quantum dot acterization system arrays by natural self-faceting on patterned substrates, 32 MBE growth and applications of silicon interface control Quantum dots formed by ultrathin insertions in wide-gap layers, 58 matrices, 40 Molecular beam epitaxial quantum nanostructures Equilibrium shape of steps and islands on polar CdTe(001) Computer simulations of the transport and electromagnetic surface: application to the preparation of self organized tem- properties of Molecular beam epitaxial-grown quantum plates for growth of nanostructures, 48 structures, 295 Molecular beam epitaxy of silicon—germanium nanostructures, Molecular beam epitaxy of CdF,—CaF, superlattices Ss MBE-growth peculiarities of fluoride (CdF,CaF,) thin film Growth and electrical characteristics of InAs/GaAs quantum structures, 112 well and quantum dot structures, 89 Subject index Quantum dot lasers: breakthrough in optoelectronics, 235 Semiconductor—insulator interface Quantum wells Structure and electronic properties of ionic nano-layers MBE- Growth and electrical characteristics of InAs/GaAs quantum grown on III-V semiconductors, 134 well and quantum dot structures, 89 Silicon Quantum wires Molecular beam epitaxy of silicon—germanium nanostructures, Uniform III-V semiconductor quantum wire and quantum dot 75 arrays by natural self-faceting on patterned substrates, 32 Si(113):As substrates Equilibrium shape of steps and islands on polar CdTe(001) The heteroepitaxy of II-VI compounds on the non-isovalent surface: application to the preparation of self organized tem- substrates (ZnTe/Si), 203 plates for growth of nanostructures, 48 SiGe heterostructures SiGe — heterostructures for CMOS technology, 250 SiGe/Si heteroepitaxy by molecular beam epitaxy Raman spectroscopy Strain-relaxed SiGe/Si heteroepitaxial structures of low thread- The elastic strain and composition of self-assembled GeSi ing-dislocation density, 120 islands on Si(001), 171 Single-electron transport Reflectance difference spectroscopy MBE-grown gate-controlled quantum-dot nanostructure and its Reflectance difference spectroscopy: a powerful tool for in situ current—voltage characteristics, 97 investigations of II-VI compounds with Mn, 216 Static induction transistor technology Reflection high energy electron diffraction Molecular layer epitaxy, 13 Investigations on the growth mechanism of wide-gap II-VI Step bunching caused by electric current heating semiconductors by means of reflection high energy electron UHV-REM study of gold adsorption on the Si(111) surface, diffraction, 159 142 Resonant cavity light emitting diodes Stepwise buffer layers Growth of resonant cavity quantum well light emitting diodes Strain-relaxed SiGe/Si heteroepitaxial structures of low thread- and two-junction solar cells by solid source molecular beam ing-dislocation density, 120 epitaxy, 260 Strongly coupled superlattice Transport spectroscopy of quantum wires and superlattices, 267 Structural investigations by reflection high energy electron diffrac- Scanning tunneling microscopy tion Equilibrium shape of steps and islands on polar CdTe(001) Structural properties of MBE grown GaMnAs layers, 165 surface: application to the preparation of self organized tem- Superlattices of Si,Ge,, material system plates for growth of nanostructures, 48 Ultra low energy SIMS, XTEM and X-ray diffraction methods Imaging wurtzite GaN surfaces by molecular beam epitaxy- for the characterization of a MBE grown short period (Si,. scanning tunneling microscopy, 149 Ge,,)i¢ superlattices, 176 Secondary ion mass spectrometry Surface charge carriers recombination Cation diffusion in MBE-grown CdTe layers, 220 Analysis of photoluminescence efficiency and surface recom- Selective area epitaxy bination velocity of MBE-grown AlGaAs layers, 180 Selective area MBE of GaAs, AlAs and their alloys by periodic Surface migration of adsorbates supply epitaxy, 6 UHV-REM study of gold adsorption on the Si(111) surface, Self organization phenomena 142 Equilibrium shape of steps and islands on polar CdTe(001) Surface passivation surface: application to the preparation of self organized tem- MBE growth and applications of silicon interface control plates for growth of nanostructures, 48 layers, 58 Self-assembled quantum dots Surface roughness Formation and properties of self-organized II-VI quantum A simple solid-on-solid model of epitaxial thin films growth: islands, 68 inhomogeneous multilayered sandwiches, 28 Self-organization in epitaxy Surface state density Molecular beam epitaxy of silicon—germanium nanostructures, Analysis of photoluminescence efficiency and surface recom- 75 bination velocity of MBE-grown AlGaAs layers, 180 Self-organized growth in molecular beam epitaxy Surface structure Quantum dot lasers: breakthrough in optoelectronics, 235 Structure and electronic properties of ionic nano-layers MBE- Self-organized quantum dots grown on III—V semiconductors, 134 Single-electron charging of self assembled quantum dots, 93 Surfactant-mediated epitaxy Semiconductor low-dimensional structures The heteroepitaxy of II-VI compounds on the non-isovalent Quantum dots formed by ultrathin insertions in wide-gap substrates (ZnTe/Si), 203 matrices, 40 Surfactant-mediated Molecular beam epitaxy Semiconductor nanostructures Formation and properties of self-organized II-VI quantum Single-electron charging of self assembled quantum dots, 93 islands, 68 MBE-grown gate-controlled quantum-dot nanostructure and its current-voltage characteristics, 97 Ternary and quaternary barrier layers 312 Subject index Magneto-optical properties of CdTe quantum wells with tern- Pyrometric interferometry during MBE growth of laser hetero- ary MgMnTe and quaternary CdMnMgTe barriers, 223 structures, 299 Thermodynamic approach to theory of epitaxial growth Transition thickness of semiconductor heteroepitaxy, 277 Wurtzite GaN Transistor structures Imaging wurtzite GaN surfaces by molecular beam epitaxy- MBE growth and applications of silicon interface control scanning tunneling microscopy, 149 layers, 58 Transition thickness from 2D to 3D growth X-ray diffraction and photoemission spectroscopy Transition thickness of semiconductor heteroepitaxy, 277 Structural properties of MBE grown GaMnAs layers, 165 Transmission electron microscopy X-ray diffraction Ultra low energy SIMS, XTEM and X-ray diffraction methods The elastic strain and composition of self-assembled GeSi for the characterization of a MBE grown short period (Si,,. islands on Si(001), 171 Ge,,)io superlattices, 176 Ultra low energy SIMS, XTEM and X-ray diffraction methods Transport and electromagnetic properties of quantum wells for the characterization of a MBE grown short period (Si, Computer simulations of the transport and electromagnetic Ge,,)\6 superlattices, 176 properties of MBE-grown quantum structures, 295 Lateral and depth inhomogeneities in Zn-based heterostructures Two-junction cascade solar cells grown on GaAs by MBE, 184 Growth of resonant cavity quantum well light emitting diodes X-ray diffuse scattering and two-junction solar cells by solid source molecular beam Local order of Te impurity atoms and free electron concentra- epitaxy, 260 tion in heavily doped GaAs:Te, 227 X-ray photoemission Ultra-low energy secondary ion mass spectrometry Electronic structure of MBE grown CdYbTe: photoemission Ultra low energy SIMS, XTEM and X-ray diffraction methods studies, 193 for the characterization of a MBE grown short period (Si,,. Ge,,)\« superlattices, 176 Zn-based heterostructures Ultrathin-layer insertions in wide-gap semiconductors Lateral and depth inhomogeneities in Zn-based heterostructures Quantum dots formed by ultrathin insertions in wide-gap grown on GaAs by MBE, 184 matrices, 40 ZnSe films UV resonant photoemission Lateral and depth inhomogeneities in Zn-based heterostructures Electronic structure of MBE grown CdYbTe: photoemission grown on GaAs by MBE, 184 studies, 193 ZnTe films Lateral and depth inhomogeneities in Zn-based heterostructures Vertical cavity surface emitting lasers grown on GaAs by MBE, 184 MBE growth of planar microcavities with distributed Bragg The heteroepitaxy of II-VI compounds on the non-isovalent reflectors, 290 substrates (ZnTe/Si), 203

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ELSEVIER Thin Solid Films 367 (2000) 306-307 www.elsevier.com/locate/tsf Author Index of Volume 367 Adamowicz, B., 180 Gornik, E., 267 Kubica, J.M., 290 Orsila, S., 260 Adamowski, J., 93, 97 Griin, M., 68 Kurabayashi, T., 13 Osten, H.J., 101 Alferov, Zh.I., 40, 235 Griesche, J., 159 Kurtz, E., 68 Anisimov, O.V., 199 Grundmann, M., 235 Kuwano, S., 149 Podor, B., 89 Aseev, A.L., 142 Grzegory, I., 281 Kyrychenko, F., 210, Parker, E.H.C., 176, 250 Guillot, C., 193 Parry, C.P., 176 Bacchin, G., 6 Gusev, S.A., 171 Larsen, A.N., 120 Pchelyakov, O.P., 75 Baczewski, L.T., 189 Guziewicz, E., 193 Latyshev, A.V., 142 Perez-Rodriguez, A., 176 Bak-Misiuk, J., 165, 232 Ledentsov, N.N., 40, Pessa, M., 260 Bakshi, P., 295 Haapamaa, J., 260 Lesiak-Orlowska, B., 193 Piatkowski, P., 134 Banshchikov, A.G., 199 Hansen, J.L., 120 Liliental-Weber, Z., 277 Ploner, G., 267 Barcz, A., 220 Hansen, L., 85 Litvinov, D., 40, 68 Ploog, K.H., 32 Barrett, H., 193 Hasegawa, H., 58, 180 Lobanov, D.N., 171 Pohl, U.W., 40 Bassas, J.M., 176 Heinrichsdorff, F., 235 Lundin, W.V., 40 Porowski, S., 281 Bednarek, S., 93, 97 Heitz, R., 40 Postnikov, V.V., 171 Bensing, F., 85 Herman, M.A., | Mackowski, S., 210, 223 Pridachin, D.N., 203 Bimberg, D., 40, 235 Hingerl, K., 216 Magnea, N., 48 Przestawski, T., 232 Bolkhovityanov, Y.B., 75 Hoffmann, A., 40 Maksymowicz, A.Z., 28 Bonanni, A., 216 Hong, S.K., 68 Malarz, K., 28 Qiu, X.G., 149 Borkovskaya, L.V., 184 Horvath, Z.J., 89 Martrou, D., 48 Bugajski, M., 290 Maximov, M.V., 235 Ratajczak, J., 290 Burdina, L.D., 203 Ilver, L., 165 McClelland, J.J., 25 Rauch, C., 267 Melanen, P., 260 Reginski, K., 232, 290 Celotta, R.J., 25 Jakiela, R., 220 Meyer, C., 189 Rodt, S., 40 Chtcherbatchev, K.D., 176 Janik, E Mironov, O.A., 176 Romano-Rodriguez, A., 176 Cooke, G.A., 176 Johnson, R.L., 193 Moisseeva, M.M., 199 Rosenauer, A., 40 Czuba, P., 134 Joyce, B.A., 3 Moldavskaya, L.D., 171 Ruvimov, S., 277 Morante, J.R., 176 Diduszko, R., 168 Kalinowski, R., 189 Mosca, R., 89 Saarinen, M., 260 Dolgov, I.V., 171 Kaniewski, J., 232 Mroz, A., 126 Sadof’ev, Y.G., 184 Domagala, J.Z., 165 Kanski, J., 165 Mroz, S., 126 Sadowski, J., 165, 168, 193 Domuchowski, V., 168 Karczewski, G., 210, 220 Muszalski, J., 290, 299 Sakharov, A.V., 40 Dowsett, M.G., 176 Katcki, J., 290 Sakurai, T., 149 Dozsa, L., 89 Kempa, K., 295 Nabetani, Y., 277 Sapko, S.Y., 184 Drozdov, Y.N., 171 Klad’ko, V.P., 184 Nadolny, A.J., 168 Sasaki, A., 277 Dvurechenskii, A.V., 75 Klingshirn, C., 68 Nasimov, D.A., 142 Savenko, V.N., 142 Kolesnik, S., 165 Nemesics, A., 89, 302 Savolainen, P., 260 Engelhardt, R., 40 Kolodziej, J., 134 Nikiforov, A.I., 75 Schmidt, M., 68 Kop’ev, P.S., 235 Nishinaga, T., 6 Segawa, Y., 149 Filatov, D.O., 171 Korecki, P., 134 Nishizawa, J.-I., 13 Semenova, G.N., 184 Franchi, S., 89 Korsunskaya, N.E., 184 Notzel, R., 32 Semtsiv, M.P., 184 Frigeri, P., 89 Kossut, J., 210, 223 Novikov, A.V., 171 Seweryn, A., 220 Fulgoni, D.J.F., 176 Kovsh, A.R., 235 Shechovtsov, L.V., 184 Kowalski, B.J., 193 Ochalski, T., 290 Shen, J., 68 Gaiduk, P.I., 120 Krasil’ nik, Z.F., 171 Ohno, T., 149 Shernyakov, Y.M., 235 Gerthsen, D., 40, 68 Krestnikov, I.L., 40 Oka, T., 68 Sidorov, Y.G., 203 Gombia, E., 89 Krupin, A.V., 199 Orlowski, B.A., 193 Sipila, P., 260 PII: $0040-6090(00)00961-5 ELSEVIER Thin Solid Films 367 (2000) 306-307 www.elsevier.com/locate/tsf Author Index of Volume 367 Adamowicz, B., 180 Gornik, E., 267 Kubica, J.M., 290 Orsila, S., 260 Adamowski, J., 93, 97 Griin, M., 68 Kurabayashi, T., 13 Osten, H.J., 101 Alferov, Zh.I., 40, 235 Griesche, J., 159 Kurtz, E., 68 Anisimov, O.V., 199 Grundmann, M., 235 Kuwano, S., 149 Podor, B., 89 Aseev, A.L., 142 Grzegory, I., 281 Kyrychenko, F., 210, Parker, E.H.C., 176, 250 Guillot, C., 193 Parry, C.P., 176 Bacchin, G., 6 Gusev, S.A., 171 Larsen, A.N., 120 Pchelyakov, O.P., 75 Baczewski, L.T., 189 Guziewicz, E., 193 Latyshev, A.V., 142 Perez-Rodriguez, A., 176 Bak-Misiuk, J., 165, 232 Ledentsov, N.N., 40, Pessa, M., 260 Bakshi, P., 295 Haapamaa, J., 260 Lesiak-Orlowska, B., 193 Piatkowski, P., 134 Banshchikov, A.G., 199 Hansen, J.L., 120 Liliental-Weber, Z., 277 Ploner, G., 267 Barcz, A., 220 Hansen, L., 85 Litvinov, D., 40, 68 Ploog, K.H., 32 Barrett, H., 193 Hasegawa, H., 58, 180 Lobanov, D.N., 171 Pohl, U.W., 40 Bassas, J.M., 176 Heinrichsdorff, F., 235 Lundin, W.V., 40 Porowski, S., 281 Bednarek, S., 93, 97 Heitz, R., 40 Postnikov, V.V., 171 Bensing, F., 85 Herman, M.A., | Mackowski, S., 210, 223 Pridachin, D.N., 203 Bimberg, D., 40, 235 Hingerl, K., 216 Magnea, N., 48 Przestawski, T., 232 Bolkhovityanov, Y.B., 75 Hoffmann, A., 40 Maksymowicz, A.Z., 28 Bonanni, A., 216 Hong, S.K., 68 Malarz, K., 28 Qiu, X.G., 149 Borkovskaya, L.V., 184 Horvath, Z.J., 89 Martrou, D., 48 Bugajski, M., 290 Maximov, M.V., 235 Ratajczak, J., 290 Burdina, L.D., 203 Ilver, L., 165 McClelland, J.J., 25 Rauch, C., 267 Melanen, P., 260 Reginski, K., 232, 290 Celotta, R.J., 25 Jakiela, R., 220 Meyer, C., 189 Rodt, S., 40 Chtcherbatchev, K.D., 176 Janik, E Mironov, O.A., 176 Romano-Rodriguez, A., 176 Cooke, G.A., 176 Johnson, R.L., 193 Moisseeva, M.M., 199 Rosenauer, A., 40 Czuba, P., 134 Joyce, B.A., 3 Moldavskaya, L.D., 171 Ruvimov, S., 277 Morante, J.R., 176 Diduszko, R., 168 Kalinowski, R., 189 Mosca, R., 89 Saarinen, M., 260 Dolgov, I.V., 171 Kaniewski, J., 232 Mroz, A., 126 Sadof’ev, Y.G., 184 Domagala, J.Z., 165 Kanski, J., 165 Mroz, S., 126 Sadowski, J., 165, 168, 193 Domuchowski, V., 168 Karczewski, G., 210, 220 Muszalski, J., 290, 299 Sakharov, A.V., 40 Dowsett, M.G., 176 Katcki, J., 290 Sakurai, T., 149 Dozsa, L., 89 Kempa, K., 295 Nabetani, Y., 277 Sapko, S.Y., 184 Drozdov, Y.N., 171 Klad’ko, V.P., 184 Nadolny, A.J., 168 Sasaki, A., 277 Dvurechenskii, A.V., 75 Klingshirn, C., 68 Nasimov, D.A., 142 Savenko, V.N., 142 Kolesnik, S., 165 Nemesics, A., 89, 302 Savolainen, P., 260 Engelhardt, R., 40 Kolodziej, J., 134 Nikiforov, A.I., 75 Schmidt, M., 68 Kop’ev, P.S., 235 Nishinaga, T., 6 Segawa, Y., 149 Filatov, D.O., 171 Korecki, P., 134 Nishizawa, J.-I., 13 Semenova, G.N., 184 Franchi, S., 89 Korsunskaya, N.E., 184 Notzel, R., 32 Semtsiv, M.P., 184 Frigeri, P., 89 Kossut, J., 210, 223 Novikov, A.V., 171 Seweryn, A., 220 Fulgoni, D.J.F., 176 Kovsh, A.R., 235 Shechovtsov, L.V., 184 Kowalski, B.J., 193 Ochalski, T., 290 Shen, J., 68 Gaiduk, P.I., 120 Krasil’ nik, Z.F., 171 Ohno, T., 149 Shernyakov, Y.M., 235 Gerthsen, D., 40, 68 Krestnikov, I.L., 40 Oka, T., 68 Sidorov, Y.G., 203 Gombia, E., 89 Krupin, A.V., 199 Orlowski, B.A., 193 Sipila, P., 260 PII: $0040-6090(00)00961-5 Author index Sitter, H., 216 Toivonen, M., 260 Vilokkinen, V., 260 Xue, Q.K., 149 Slupinski, T., 227 Tsatsul’nikov, A.F., 235 Voigtlander, B., 75 Xue, Q.Z., 149 Sokolov, N.S., 112, Tsong, I.S.T., 149 Volovik, B.V., 235 Stifter, D., 216 Vostokov, N.V., 171 Yakimov, A.L., 75 Strafburg, M., 40 Ulin, V.P., 199 Yakovlev, N.L., 199 Strasser, G., 267 Usikov, A.S., 40 Waag, A., 85 Yakushev, M.V., 203 Suturin, S.M., 112 Ustinov, V.M., 235 Washburn, J., 277 Yao, T., 68 Swiatek, K., 165 Uusimaa, P., 260 Wawro, A., 189 Zbroszczyk, M., 290 Szafran, B., 93, 97 Weber, E.R., 277 Zhukov, A.E., 235 Szamota-Sadowska, K., 193 Van Tuyen, V., 89 Whall, T.E., 250 Zielinska-Rohozinska, E., 227 Szymonski, M., 134 Varavin, V.S., 203 Wojtowicz, T., 210, 220 Venger, E.F., 184 Wolkenberg, A., 232 sella A u ELSEVIER Thin Solid Films 367 (2000) 308-312 www.elsevier.com/locate/tsf Subject Index of Volume 367 AlGaAs photoluminescence Current—voltage characteristics Analysis of photoluminescence efficiency and surface recom- MBE-grown gate-controlled quantum-dot nanostructure and its bination velocity of MBE-grown AlGaAs layers, 180 current—voltage characteristics, 97 Atom optics Laser-focused atomic deposition — nanofabrication via atom Device with side-gated quantum wires optics, 25 Transport spectroscopy of quantum wires and superlattices, 267 Atomic force microscopy Diffusion processes in cation sublattice MBE-growth peculiarities of fluoride (CdF,—-CaF,) thin film Cation diffusion in MBE-grown CdTe layers, 220 structures, 112 Diluted magnetic semiconductors The elastic strain and composition of self-assembled GeSi Reflectance difference spectroscopy: a powerful tool for in situ islands on Si(001), 171 investigations of II-VI compounds with Mn, 216 Lateral and depth inhomogeneities in Zn-based heterostructures Directional Auger electron spectroscopy grown on GaAs by MBE, 184 Auger electron spectroscopy in the investigation of ultrathin Manganese fluoride epitaxial growth on Si(111), 199 films in molecular beam epitaxy, 126 Atomic layer epitaxy Dopant diffusion in Si,_,-,Ge,C, Equilibrium shape of steps and islands on polar CdTe(001) MBE growth and properties of supersaturated, carbon-contain- surface: application to the preparation of self organized tem- ing silicon/germanium alloys on Si(001), 101 plates for growth of nanostructures, 48 Doping of GaN crystals GaN substrates for molecular beam epitaxy growth of homo- Capacitance spectroscopy epitaxial structures, 281 Single-electron charging of self assembled quantum dots, 93 Carbon-containing Si/Ge alloy Electron holography MBE growth and properties of supersaturated, carbon-contain- Structure and electronic properties of ionic nano-layers MBE- ing silicon/germanium alloys on Si(001), 101 grown on III—V semiconductors, 134 CdTe/ZnTe multiple quantum wells Electron transport spectroscopy Influence of MBE growth conditions on optical properties of Transport spectroscopy of quantum wires and superlattices, 267 CdTe/ZnTe quantum structures, 210 Epitaxial films Characterization of molecular beam epitaxy grown films Manganese fluoride epitaxial growth on Si(111), 199 Auger electron spectroscopy in the investigation of ultrathin films in molecular beam epitaxy, 126 Fermi level pinning Charge carriers transport in mechanically relaxed epilayers MBE growth and applications of silicon interface control Growth and transport properties of relaxed epilayers of InAs on layers, 58 GaAs, 232 First-principles total-energy calculations CMOS technology Imaging wurtzite GaN surfaces by molecular beam epitaxy- SiGe — heterostructures for CMOS technology, 250 scanning tunneling microscopy, 149 Computer simulations A simple solid-on-solid model of epitaxial thin films growth: GaAs tera-hertz devices grown by molecular layer epitaxy inhomogeneous multilayered sandwiches, 28 Molecular layer epitaxy, 13 Computer simulations of the transport and electromagnetic GaAs:Te solid solution properties of MBE-grown quantum structures, 295 Local order of Te impurity atoms and free electron concentra- Critical thickness of the epilayer tion in heavily doped GaAs:Te, 227 Correlation between the critical layer thickness and the decay- Gadolinium epitaxial thin films time constant of RHEED oscillations in strained Magnetic anisotropy in MBE-grown epitaxial gadolinium ultra- In,Ga,_,As/GaAs structures, 302 thin films, 189 Crystallization of GaN under high N, pressure Germanium GaN substrates for molecular beam epitaxy growth of homo- Molecular beam epitaxy of silicon—-germanium nanostructures, epitaxial structures, 281 75 PII: S0040-6090(00)00962-7 Subject index Gold adsorption on Si(111) surface Laser-focused atom deposition UHV-REM study of gold adsorption on the Si(111) surface, Laser-focused atomic deposition - nanofabrication via atom 142 optics, 25 Layer-by-layer growth of ultrathin films Hall effect measurements Auger electron spectroscopy in the investigation of ultrathin Growth and transport properties of relaxed epilayers of InAs on films in molecular beam epitaxy, 126 GaAs, 232 Local order of impurities Heavily doped semiconductors Local order of Te impurity atoms and free electron concentra- Local order of Te impurity atoms and free electron concentra- tion in heavily doped GaAs:Te, 227 tion in heavily doped GaAs:Te, 227 Low energy electron diffraction Heteroepitaxy Structure and electronic properties of ionic nano-layers MBE- Molecular beam epitaxy of silicon—-germanium nanostructures, grown on III-V semiconductors, 134 75 Low-temperature atomic layer epitaxy Heteroepitaxy by molecular beam epitaxy Formation and properties of self-organized II-VI quantum MBE growth and applications of silicon interface control islands, 68 layers, 58 Heteroepitaxy of II-VI compounds The heteroepitaxy of II-VI compounds on the non-isovalent Magnetic phase transitions substrates (ZnTe/Si), 203 Structural properties of MBE grown GaMnAs layers, 165 High resolution X-ray diffraction Magnetic structures Influence of Mn content in MBE-grown Sn,_,Mn,Te layers on A simple solid-on-solid model of epitaxial thin films growth: their structural properties studied by X-ray diffraction, 168 inhomogeneous multilayered sandwiches, 28 High-resolution X-ray diffractometry Magnetization in thin films Growth and transport properties of relaxed epilayers of InAs on Magnetic anisotropy in MBE-grown epitaxial gadolinium ultra- GaAs, 232 thin films, 189 Historical perspective of molecular beam epitaxy Magneto-optical properties of quantum wells Fundamental growth processes in the molecular beam epitaxy Magneto-optical properties of CdTe quantum wells with tern- of III-V compounds — an historical perspective, 3 ary MgMnTe and quaternary CdMnMgTe barriers, 223 Homoepitaxy and heteroepitaxy by molecular beam epitaxy Material contrast in reflection high-energy electron diffraction pat- Fundamental growth processes in the molecular beam epitaxy terns of III-V compounds ~ an historical perspective, 3 Investigations on the growth mechanism of wide-gap II-VI Hut-clusters and dome-islands semiconductors by means of reflection high energy electron The elastic strain and composition of self-assembled GeSi diffraction, 159 islands on Si(001), 171 Mechanisms of molecular beam epitaxy growth of Si, ,Ge, alloys Strain-relaxed SiGe/Si heteroepitaxial structures of low thread- III-V semiconductor compounds ing-dislocation density, 120 Structure and electronic properties of ionic nano-layers MBE- Metallic thin films grown on III-V semiconductors, 134 Magnetic anisotropy in MBE-grown epitaxial gadolinium ultra- III-V semiconductors thin films, 189 Uniform III-V semiconductor quantum wire and quantum dot MnF, growth by molecular beam epitaxy on CaF,/Si(111) sub- arrays by natural self-faceting on patterned substrates, 32 strates InAs and Si quantum dots Manganese fluoride epitaxial growth on Si(111), 199 InAs quantum dots embedded in silicon, 85 Molecular beam epitaxy Injection lasers Uniform III-V semiconductor quantum wire and quantum dot Quantum dot lasers: breakthrough in optoelectronics, 235 arrays by natural self-faceting on patterned substrates, 32 Intensity oscillations of the reflection high energy electron diffrac- Molecular beam epitaxy of silicon—germanium nanostructures, tion specular beam 75 Correlation between the critical layer thickness and the decay- InAs quantum dots embedded in silicon, 85 time constant of RHEED oscillations in strained Structure and electronic properties of ionic nano-layers MBE- In,Ga,_,As/GaAs structures, 302 grown on III-V semiconductors, 134 Interfaces Lateral and depth inhomogeneities in Zn-based heterostructures A simple solid-on-solid model of epitaxial thin films growth: grown on GaAs by MBE, 184 inhomogeneous multilayered sandwiches, 28 The heteroepitaxy of II-VI compounds on the non-isovalent Interface control layers substrates (ZnTe/Si), 203 MBE growth and applications of silicon interface control Pyrometric interferometry during MBE growth of laser hetero- layers, 58 structures, 299 Intra-ion transitions Molecular beam epitaxial growth Reflectance difference spectroscopy: a powerful tool for in situ MBE growth and properties of supersaturated, carbon-contain- investigations of II-VI compounds with Mn, 216 ing silicon/germanium alloys on Si(001), 101 310 Subject index Molecular beam epitaxial growth interruption effects Molecular beam epitaxy of GaAs, ALGaAs, ALAs Influence of MBE growth conditions on optical properties of Selective area MBE of GaAs, A1As and their alloys by periodic CdTe/ZnTe quantum structures, 210 supply epitaxy, 6 Molecular beam epitaxy growth mechanisms of thin film structures Molecular beam technology growth of Bragg reflectors MBE-growth peculiarities of fluoride (CdF,—CaF,) thin film MBE growth of planar microcavities with distributed Bragg structures, 112 reflectors, 290 Molecular beam epitaxial growth modes Molecular layer epitaxy of GaAs, InP and Si Transition thickness of semiconductor heteroepitaxy, 277 Molecular layer epitaxy, 13 Molecular beam epitaxy growth of CdTe Cation diffusion in MBE-grown CdTe layers, 220 Nanostructures Molecular beam epitaxial growth of CdTe quantum wells Reflectance difference spectroscopy: a powerful tool for in situ Magneto-optical properties of CdTe quantum wells with tern- investigations of II-VI compounds with Mn, 216 ary MgMnTe and quaternary CdMnMgTe barriers, 223 Nanotechnology Molecular beam epitaxy growth of CdYbTe Laser-focused atomic deposition — nanofabrication via atom Electronic structure of MBE grown CdYbTe: photoemission studies, 193 optics, 25 Equilibrium shape of steps and islands on polar CdTe(001) Molecular beam epitaxy growth of embedded heterostructures surface: application to the preparation of self organized tem- Growth and electrical characteristics of InAs/GaAs quantum plates for growth of nanostructures, 48 well and quantum dot structures, 89 Molecular beam epitaxy growth of GalnP/AlGalInP and GalnP/ GaAs heterostructures Optoelectronics Growth of resonant cavity quantum well light emitting diodes InAs quantum dots embedded in silicon, 85 and two-junction solar cells by solid source molecular beam epitaxy, 260 Passivation by interface control layer Molecular beam epitaxy growth of GaMnAs Analysis of photoluminescence efficiency and surface recom- Structural properties of MBE grown GaMnAs layers, 165 bination velocity of MBE-grown AlGaAs layers, 180 Molecular beam epitaxial growth of GeSi nanoislands Patterned growth The elastic strain and composition of self-assembled GeSi Uniform III-V semiconductor quantum wire and quantum dot islands on Si(001), 171 arrays by natural self-faceting on patterned substrates, 32 Molecular beam epitaxial growth of homoepitaxial GaN layers Periodic supply epitaxy GaN substrates for molecular beam epitaxy growth of homo- Selective area MBE of GaAs, AlAs and their alloys by periodic epitaxial structures, 281 supply epitaxy, 6 Molecular beam epitaxial growth of II-VI compounds Perpendicular magnetic anisotropy Investigations on the growth mechanism of wide-gap II-VI Magnetic anisotropy in MBE-grown epitaxial gadolinium ultra- semiconductors by means of reflection high energy electron thin films, 189 diffraction, 159 Photoluminescence Molecular beam epitaxial growth of InAs on GaAs Influence of MBE growth conditions on optical properties of Growth and transport properties of relaxed epilayers of InAs on CdTe/ZnTe quantum structures, 210 GaAs, 232 Planar microcavities Molecular beam epitaxial growth of SnMnTe MBE growth of planar microcavities with distributed Bragg Influence of Mn content in MBE-grown Sn,_,Mn,Te layers on reflectors, 290 their structural properties studied by X-ray diffraction, 168 Pseudomorphic Si/SiGe/Si heterostructures Molecular beam epitaxial growth of strained heterostructures SiGe — heterostructures for CMOS technology, 250 Correlation between the critical layer thickness and the decay- Pyrometric interferometry time constant of RHEED oscillations in strained Pyrometric interferometry during MBE growth of laser hetero- In,Ga,_,As/GaAs structures, 302 structures, 299 Molecular beam epitaxial growth physics Fundamental growth processes in the molecular beam epitaxy of III-V compounds — an historical perspective, 3 Quantum dots Molecular beam epitaxial multi-chamber growth/processing/char- Uniform III-V semiconductor quantum wire and quantum dot acterization system arrays by natural self-faceting on patterned substrates, 32 MBE growth and applications of silicon interface control Quantum dots formed by ultrathin insertions in wide-gap layers, 58 matrices, 40 Molecular beam epitaxial quantum nanostructures Equilibrium shape of steps and islands on polar CdTe(001) Computer simulations of the transport and electromagnetic surface: application to the preparation of self organized tem- properties of Molecular beam epitaxial-grown quantum plates for growth of nanostructures, 48 structures, 295 Molecular beam epitaxy of silicon—germanium nanostructures, Molecular beam epitaxy of CdF,—CaF, superlattices Ss MBE-growth peculiarities of fluoride (CdF,CaF,) thin film Growth and electrical characteristics of InAs/GaAs quantum structures, 112 well and quantum dot structures, 89 Subject index Quantum dot lasers: breakthrough in optoelectronics, 235 Semiconductor—insulator interface Quantum wells Structure and electronic properties of ionic nano-layers MBE- Growth and electrical characteristics of InAs/GaAs quantum grown on III-V semiconductors, 134 well and quantum dot structures, 89 Silicon Quantum wires Molecular beam epitaxy of silicon—germanium nanostructures, Uniform III-V semiconductor quantum wire and quantum dot 75 arrays by natural self-faceting on patterned substrates, 32 Si(113):As substrates Equilibrium shape of steps and islands on polar CdTe(001) The heteroepitaxy of II-VI compounds on the non-isovalent surface: application to the preparation of self organized tem- substrates (ZnTe/Si), 203 plates for growth of nanostructures, 48 SiGe heterostructures SiGe — heterostructures for CMOS technology, 250 SiGe/Si heteroepitaxy by molecular beam epitaxy Raman spectroscopy Strain-relaxed SiGe/Si heteroepitaxial structures of low thread- The elastic strain and composition of self-assembled GeSi ing-dislocation density, 120 islands on Si(001), 171 Single-electron transport Reflectance difference spectroscopy MBE-grown gate-controlled quantum-dot nanostructure and its Reflectance difference spectroscopy: a powerful tool for in situ current—voltage characteristics, 97 investigations of II-VI compounds with Mn, 216 Static induction transistor technology Reflection high energy electron diffraction Molecular layer epitaxy, 13 Investigations on the growth mechanism of wide-gap II-VI Step bunching caused by electric current heating semiconductors by means of reflection high energy electron UHV-REM study of gold adsorption on the Si(111) surface, diffraction, 159 142 Resonant cavity light emitting diodes Stepwise buffer layers Growth of resonant cavity quantum well light emitting diodes Strain-relaxed SiGe/Si heteroepitaxial structures of low thread- and two-junction solar cells by solid source molecular beam ing-dislocation density, 120 epitaxy, 260 Strongly coupled superlattice Transport spectroscopy of quantum wires and superlattices, 267 Structural investigations by reflection high energy electron diffrac- Scanning tunneling microscopy tion Equilibrium shape of steps and islands on polar CdTe(001) Structural properties of MBE grown GaMnAs layers, 165 surface: application to the preparation of self organized tem- Superlattices of Si,Ge,, material system plates for growth of nanostructures, 48 Ultra low energy SIMS, XTEM and X-ray diffraction methods Imaging wurtzite GaN surfaces by molecular beam epitaxy- for the characterization of a MBE grown short period (Si,. scanning tunneling microscopy, 149 Ge,,)i¢ superlattices, 176 Secondary ion mass spectrometry Surface charge carriers recombination Cation diffusion in MBE-grown CdTe layers, 220 Analysis of photoluminescence efficiency and surface recom- Selective area epitaxy bination velocity of MBE-grown AlGaAs layers, 180 Selective area MBE of GaAs, AlAs and their alloys by periodic Surface migration of adsorbates supply epitaxy, 6 UHV-REM study of gold adsorption on the Si(111) surface, Self organization phenomena 142 Equilibrium shape of steps and islands on polar CdTe(001) Surface passivation surface: application to the preparation of self organized tem- MBE growth and applications of silicon interface control plates for growth of nanostructures, 48 layers, 58 Self-assembled quantum dots Surface roughness Formation and properties of self-organized II-VI quantum A simple solid-on-solid model of epitaxial thin films growth: islands, 68 inhomogeneous multilayered sandwiches, 28 Self-organization in epitaxy Surface state density Molecular beam epitaxy of silicon—germanium nanostructures, Analysis of photoluminescence efficiency and surface recom- 75 bination velocity of MBE-grown AlGaAs layers, 180 Self-organized growth in molecular beam epitaxy Surface structure Quantum dot lasers: breakthrough in optoelectronics, 235 Structure and electronic properties of ionic nano-layers MBE- Self-organized quantum dots grown on III—V semiconductors, 134 Single-electron charging of self assembled quantum dots, 93 Surfactant-mediated epitaxy Semiconductor low-dimensional structures The heteroepitaxy of II-VI compounds on the non-isovalent Quantum dots formed by ultrathin insertions in wide-gap substrates (ZnTe/Si), 203 matrices, 40 Surfactant-mediated Molecular beam epitaxy Semiconductor nanostructures Formation and properties of self-organized II-VI quantum Single-electron charging of self assembled quantum dots, 93 islands, 68 MBE-grown gate-controlled quantum-dot nanostructure and its current-voltage characteristics, 97 Ternary and quaternary barrier layers 312 Subject index Magneto-optical properties of CdTe quantum wells with tern- Pyrometric interferometry during MBE growth of laser hetero- ary MgMnTe and quaternary CdMnMgTe barriers, 223 structures, 299 Thermodynamic approach to theory of epitaxial growth Transition thickness of semiconductor heteroepitaxy, 277 Wurtzite GaN Transistor structures Imaging wurtzite GaN surfaces by molecular beam epitaxy- MBE growth and applications of silicon interface control scanning tunneling microscopy, 149 layers, 58 Transition thickness from 2D to 3D growth X-ray diffraction and photoemission spectroscopy Transition thickness of semiconductor heteroepitaxy, 277 Structural properties of MBE grown GaMnAs layers, 165 Transmission electron microscopy X-ray diffraction Ultra low energy SIMS, XTEM and X-ray diffraction methods The elastic strain and composition of self-assembled GeSi for the characterization of a MBE grown short period (Si,,. islands on Si(001), 171 Ge,,)io superlattices, 176 Ultra low energy SIMS, XTEM and X-ray diffraction methods Transport and electromagnetic properties of quantum wells for the characterization of a MBE grown short period (Si, Computer simulations of the transport and electromagnetic Ge,,)\6 superlattices, 176 properties of MBE-grown quantum structures, 295 Lateral and depth inhomogeneities in Zn-based heterostructures Two-junction cascade solar cells grown on GaAs by MBE, 184 Growth of resonant cavity quantum well light emitting diodes X-ray diffuse scattering and two-junction solar cells by solid source molecular beam Local order of Te impurity atoms and free electron concentra- epitaxy, 260 tion in heavily doped GaAs:Te, 227 X-ray photoemission Ultra-low energy secondary ion mass spectrometry Electronic structure of MBE grown CdYbTe: photoemission Ultra low energy SIMS, XTEM and X-ray diffraction methods studies, 193 for the characterization of a MBE grown short period (Si,,. Ge,,)\« superlattices, 176 Zn-based heterostructures Ultrathin-layer insertions in wide-gap semiconductors Lateral and depth inhomogeneities in Zn-based heterostructures Quantum dots formed by ultrathin insertions in wide-gap grown on GaAs by MBE, 184 matrices, 40 ZnSe films UV resonant photoemission Lateral and depth inhomogeneities in Zn-based heterostructures Electronic structure of MBE grown CdYbTe: photoemission grown on GaAs by MBE, 184 studies, 193 ZnTe films Lateral and depth inhomogeneities in Zn-based heterostructures Vertical cavity surface emitting lasers grown on GaAs by MBE, 184 MBE growth of planar microcavities with distributed Bragg The heteroepitaxy of II-VI compounds on the non-isovalent reflectors, 290 substrates (ZnTe/Si), 203

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