n E M. Ichimura, K. Takeuchi, Y. Ono, E. Arai... .... ee Cen err) a ee ee es ree ee Electrochemical deposition of SnS thin films AASC.a owTiAeAGsa,. p etJeieN.ee csmt,Ci. nCT.g R,. Gc cccerree r t e wet eeeese en In situ RBS analysis of CulnSe, A. Werner, I. Luck, J. Bruns, J. Klaer, K. Siemer, D. Braunig...... . Ne ae a ne a eee ee eee 7 Investigation of the influence of silver on the crystal growth of CulnS, thin films H. Cachet, R. Cortes, M. Froment, A. Etcheberry ....... (ade Solan Paras veasee Wee an Rigi imtice Electrodepositoifo enp itaxiaCl dSe on (111)g alliuma rsenide D. Gal, G. Hodes, D. Lincot, H.-W. Schock. ...... Terese ys ee re Se 4 eh ke OED & ba 43 bo Electrochemical deposition of zinc oxide films from non-aqueous solution: a new buffer/window process for thin film solar cells SPEC EC CECT CCRT CCE LE CUR CECT CCU URC ULEE TE ee en ee ee ee ee ee A.M. Hermann, M. Mansour, V. Badri, B. Pinkhasov, C. Gonzales, F. Fickett, M.E. Calixto, P.J. Sebastian, C.H. Marshall, Deposition of smooth Cu(In,Ga)Se, films from binary multilayers J.M. Merino, S. Mahanty, M. Leon, R. Diaz, F. Rueda, J.L. Martin de Vidales.............. 0.000000 0008 5, compounds CCCuuullnln;nS;e,S;eS se ; Scoathfnra dur catcutrearli zation ee eee ee OR he ee RAE eeece nh ETDes ~ RAOh, tsR s CFUis DfeR : itletdaPfagCCnahelieunnrd dsilecplddo,enTmchos r wHstense i griid no, qtgdiu_e oe,pnsTo es ition 00000004 .......M.e.lEl..i .ko.v. ...Va rTe.m a, MereA,. RebHa.n e, BijaOk.i na, MiklVi., KrunMk.s , Coamsnptdoor Csufufc iitlptlunrimrbeSsoseyp,p p a r yarryeo dly sis ee oer Te wed ae ieee PCTTT CELCC eC Pee MetH.z ner...M.a.hn.k.e.H,. -E. GossMl.a, sICtotfoCanyuuhhiffnvs-ilel deItn mn ns seS .......C.o.Gn.t. r.er.a.s-.P.ue.Mno.tAre0.a 0le5sS.-aA nGct.ae Cnvrauez,Fd, . o , VaLi.l lanVti,gO i.l , t m,i gaSpray pyrolysis deposition of cadmium—zinc oxide thin films t....... KonR.e nkamp Lux-SteiMn.eCrh, . KaiI.s er, ErnsKt., MunVo.z , TribRo.u let, LevCy.- ClémeZnetnFi,.a , ion Surface texturization of ZnTe crystals and thin films wes eee ndaee sai shae S Rae Rehaee o-4 o5o d bho bs I I es es aas Culn,Se,: pHreotpeerroteipeist axy irnetveirefwa ce atmoao hafnfet d e rial ees eee ee ee ee cecece e 0.0.0 .....0..0 SumD.m a... CowP.a che, LincDo.t , Ozsan,M .E. GibsonP.,N . Modelling of the structure of CdS thin films BaRy. on.....Ch.a.pa.r.rAo..,M. .. ....Ma.r tineMz.,A . Dofia, JM. GuilCl.e n, GutiérrMe.zT,. HerJr. ero, dbeyp osition Pcwhhioentmdoiovcowalslt aic bath ar eae eee eorees a oka ene EW ee ek hh Pe eea Ns a ye SSeee Fleavsahopc foh raatlhftciiionlo gmnse nide Pe tee ee eee Oe ge agin eae eee eakee abeee ee fee EER DG I,E s eaee ,Pa deposbiattiho n chemicala qubeyo usZ nSof depotshie tfioorn conditbiaosnics defiinn ing complexteerson fa ry impoTrhtea nce agu e ea y CSey e t r L Pr Preee e swe er re re ee Kpucrsoeiecnvugar psoorrast ion by Cu(In,Ga)Se, faoGilfrlk omaswl itnhe thin 4 fiN gs LORS SBAR N OT gh AR Oe SM.E.R W ood,D .A. PainteJr.,D . RogersK,. D. Lane, D.W. dCSitfynhitdn ilrSnmua sc—m tiCre eee oo ed ie oe eSee ee en ee ee ed a ti e IucdrsaTl e Contents www.elsevier.com/locate/tsf 2000 Febr21u ary 361-362, Volumes EVIER fits U l a 93 88 84 79 74 70 65 61 56 53 49 4] 34 28 22 17 9 | e nescenc zation an ility sing ree . BucherE . SchenkeOr., Klenk, M. films CuGaSe, thinned sucocfe ssively measurements fluoresXc-ernaceya nd Photolumi ees ecw ccc ect ct 0. .. TenmR.e BastSi.d e, KattyA,. LévyC-. Clement, AlbuA-.Y aron, films thin MoSo,f micrtohset ornu cture parameters deposition electthreo ocfh emical Influence we ee be© OA WM ee Ck a Wl a gea Ee hy er I ea a oe asemiconductorcsh ailnc opyrite modificatioSntsru cture 0000. ........K.O.Rn..e n.k.a.m.p ..L0u0x-0S teiMn.e-rC,h . NeuMm.a nn-SpSailIe.bl earr,t ,E rnsKt., substratepso rooun s compouIIn-dVosIf Characteri ..... SchRe. er... MoranJt.eR., RomAa.n o-Rodriguez, PéreA.z -Rodriguez, MaJr.c os-Ruzafa, AlvJ.a rez-Garcia, analysis structural films: CulnS, polycrysftarlolmi ne scattering MicroRam . . KuzZn.i cki SwiaZ.t ek, CiacR.h , BurachVe.kR,. UlyanyK.tSs.k y, ParfenOy.uAk., IlashcMh.uIk., SavitskAy.,V . crystals telluride cadofm ium propertiesp hyosifc al Thermostab eee ee Oe ee Re OANAO S eea 644 eea e sb sa Gea OS a currenti ndubceeda m elecwtirtohnc e llss olaCrI S superstrateC haracteri eeeee ee ee ee eee 2.0... KonMa. gai...Y.am.Aa..d .a., .... SugTi.y ama, ChaSi.s itsak, ShimAi.z u, layer Cu(InGa)Se, ctseholell asr itfbZnhiui ilfnnmfc e-rb ased 8 ek ee a Oe 8 WAA We oe Wek AO CR ak A Oe ie hee oe eh heAh Oak as D. Hariskos, D. Powalla, M. Schock, H.-W. Loeffl, A. Kerber, H. Cowache, P. Yousfi, E.-B. Guillemoles, J.-F. Canava, B. Wet treatment based interface engineering for high efficiency Cu(In,Ga)Se, solar cells eeee eee 0.000 LiDn.c ot...P.o.wa.Ml..l a.,. ....C.o.wP .a che, PietVu,. AsiTk.a inen, YousfiE,. B. cells solar diseleniindde ium copfpoerr epitalaxtye r atobmyi c deposiltaeyder s buffer Cadmium-f HerJr. ero GutiérrMe.zT,. BayRo.n , GuilCl.e n, MartineMz.,A . ChaparrAo.,M . mcdSseotaocZfbteoonfhhinuafnhnpmfierl bOt deSoen mpshp, mce sst o hitgrown by vapour deposition application layer i rscells ZnSe chemical CIGSS solar thin films for as buffer in scoati atletledoi gM.A. Contreras, B. Egaas, D. King, A. Swartzlander, T. Dullweber............... 0... ee eee ee eens oyn mCTotfauhiefnillx nimnt spSu urele,a IosotgopCtfthhnnifoforuiie lfl do(n omlywiI sunctun e rh,mny G csKoCsisbtfceatinhiitfaIy )at ilnu lS ulSnmedo- l etirfi,ieioncd mers eNovel approach to the chemical bath deposition of chalcogenide semiconductors m tartyi EE Se I PERE SUS a a a ace ee a ee a a ee a on Differences in copper indium selenide films obtained by electron beam and flash evaporation ee Se, nd Belt we eR Oe ee Re 408 Sle ee ea ee es Charging and discharging of defect states in CIGS/ZnO junctions G. Orsal, F. Mailly, N. Romain, M.C. Artaud, S. Rushworth, S. Duchemin............... 0.000005 eee Study of polycrystalline CuGaSe, thin films deposited by MOCVD onto ZnO substrates M.E. Beck, T. Weiss, D. Fischer, S. Fiechter, A. Jager-Waldau, M.Ch. Lux-Steiner .................0000. Structural analysis of Cu,-,Ag,GaSe, bulk materials and thin films RS RE EAT ee iD UPA a a a Gl aa eer em Influence of sulphur on the electrical and optical properties of p-type Culn(S,Se,_,)) single crystals EE Pee ER rn eg ek ear are as eee es eae ee Photoelectric properties of heterostructures based on thermo-oxidated GaSe and InSe crystals C. Lepiller, P. Cowache, J.F. Guillemoles, N. Gibson, E. Ozsan, D. Lincot... 2.2... 0.0.0. ee eee Fast electrodeposition route for cadmium telluride solar cells J. Méller, Ch.-H. Fischer, H.-J. Muffler, R. KOnenkamp, I. Kaiser, C. Kelch, M.C. Lux-Steiner ............... A novel deposition technique for compound semiconductors on highly porous substrates: ILGAR ae a ea er ae ee ee ee ee Molten salt route for ZnSe high-temperature electrosynthesis EERE EN I Oo er ee ee a es ee er ee ee ee ere Electrostatic assisted aerosol jet deposition of CdS, CdSe and ZnS thin films Contents 223 218 213 208 203 198 193 187 183 177 167 RTJSL1ACMAMC0oauo7..hh..0upgm2 m.. 0lex b ma5ree-k.-rr,S Whg taa,lle dtiaenur,e, DDPGF BMrR1SeweeneU>yDaeeE6.en.eeN.O..enamW1 esbe Me,rrm. .eOeo m.e Gme ,eEo.e n rne.E,1aayeeaoe,eee. 5or e eee5 .ee e . ..AO e1 reea.re5 0.e . .Eee.145 ..0 140 E135 130 126 123 118 113 107 102 c i t e n g a m a r a p - n o r t c Galloway, Edwards, PSD..uRAr..o se K. EBIC and luminescence mapping of CdTe/CdS solar cells T.A. Callcott, F.J. Himpsel, D.L. Ederer, R.C.C. Perera, W. Riedl, F. Karg. ... . Self-limitation of Na content at the CdS/Cu(In,Ga)Se, solar cell heterojunction L. Kronik, U. Rau, J.-F. Guillemoles, D. Braunger, H.-W. Schock, D. Cahen. Interface redox engineering of Cu(In,Ga)Se, — based solar cells: oxygen, sodium, and chemical . Nakada T. Nano-structural investigations on Cd-doping into Cu(In,Ga)Se, thin films by chemical bath depo GuillemolJe.Fs. Stability of Cu(In,Ga)Se, solar cells: a thermodynamic approach Rockett... A... point Cu(In,Ga,_,)Se> TEedfelhffeeeec cctttrsso nic oinf Romeo, BToesdieos,c hi, RC.a nevari. NAV... Back contacts to CSS CdS/CdTe solar cells and stability of performances Johnson D.R. Microstructure of electrodeposited CdS/CdTe cells DRWuoafgnfegyr,.s ,. .Lane, OPeztsearn, , NDMLKR. ...... LDMEW..... KSiatmtipnmgearn, n, Rechid, RJ.e ineke-Koch.... AVR. ... Lelaercgter odeposition Cu(In,Ga)Se, aorfe a . .. DuEn.lDo.O zpsM.a..rE.,.F rGi.e sen, Iepxhmhapisebedi atnincge mCelodedTmeeel n t fsccbeoooelrlnhl asasrt v ainotu r U. Rau, A. Jasenek, H.W. Schock, F. Engelhardt, Th. Meyer chheatlecroopjyurnicttei on bsEmolaelescacehrtd ar onniiscm s clieonls lss BDeugrrgaevlem.a n, Nollet, PMS... The back contact influence on characteristics of CdTe/CdS solar cells D.L. Batzner, M.E. Oszan, D. Bonnet, K. Biicher Device analysis methods for physical cell parameters of CdTe/Cds solar cells MSDBRSHSUR.c..c.rca. h ah huWdpaCumoI.ohoteosc.fruaelnonhinecff fole(l eafgmd klplca tIlet,epestr unrr,Mene zes S. rr e,,, itn GcicaeaElectrochemical solutions to some thin-film PV manufacturing issues els) SeOKtL.GtRi D.eop. SK s pz.PeJoT O.uerl oW.nMl,dbi n .z,end e rkow,lrs efkr,y, , , PcaedhioCnblianlangubtdaCseb assrh-y stImsyteeoIre eoei inwdrrntb-s nbutu S te t irio onn P. Zabierowski, M. Igalson . Ttpuhhnoentreomlvalolillntyga ic Cu(In,Ga)Se,-based assisted devices in O. Ka, H. Alves, I. Dirnstorfer, T. Christmann, B.K. Meyer . Investigation of post-growth Cu-diffusion in In-rich CulnSe, films FRRWKMMMHCSUGUHUED.iti..ai...iee.r..ae n c rrss o hdikhCsbkkhLafoll,,niueiea,ibf,, ,hr(lt,n s m,oeI oosr mCousinvs, nrMDu.rAo.s e. K. . aoa,blg,eG eraGrain structure of CdTe in CSS-deposited CdTe/CdS solar cells n)Halliday, PCootutseirn, s, Durose. KMM... D.G. D.P. eSiet,cells solar i esTe/oCfd S properties lumitnhees ocne nt treatment chloride cadmium varoyfi ng effectthse of stuAdy Lips K. Weiss, T. Kanschat, P. Birkholz, M. Eleresonance (EPR) and light-induced EPR investigations of CuGaSe, SSKMTAZHKMHF..ir.ii...oa- ee rwN guJsbjsCa..scCgofgeuccr ueo ohf,,niphillrGa t,el,, aarr rs r,iaOzsMa.nE .L aneD,. W. PaiJn.tDe.r ,W ooDd.,A. RogKe.rDs., s tScttter ae,Novel depth profiling in Cds-CdTe thin films tr/eiZ znaOt ion bath effects sition process . shbelepyete cectrtrorojodusencpcootpSasoCcettfndlur dSldu /sic CetdsuT real fabricated SCuT-process UE.m bach. film thin Cd sii ioc tn i o n HEGFUBBFTGCDURETvCLNMii.o.e.....rrrea.u.m.Jcn s n as ourub.Mhkt nkhsmr a,,.eceh,ie cd o,, nnth, e,, ,l l o, 360 353 346 338 309 303 288 263 258 253 248 243 239 234 S e g R es Ee he Re Caway ee a .........C.h.am pCn.He.s sS hiI.h , Wang,H. P. Culn,a;nSed; CulnSe, monoonc rystallSitnudei es 8 ......T.om.li.Rn..sDo..n H .i ll, A.E. PilkiRn.gDt.o n, SchockH,. W. KrJu.s tok, MartinR,. W. YakusMh.eVv., ionsD and He with implanftieldm s thin CIGoSf studPy L A 2 aea areth ee 656 ee eee ee vee rre e RS eee samples CulnSe, monoofc rystallinAe nnealin .....S.c.h.o.cHk . W. NouRf.i , ContreMr.aAs., SchAw.a rtzlander,S haWm.s -KolHaahniGn,.a , DulTl. weber, Cu(iInn ,Ga)Seg,r ading galolfi um effectth e of Study bees ee bas ear ee ee eRe ea ek Ed 6 6a pe a ee rerdevicaensd films Cu(InGa)Se,e vapoon rated profile deposatnido n temperaturseu bsotfr ate Effect 8 Swee ee eee tee wew .. tKrii geDr. Kurps,R. Kanis, M. LuckI,. ScneerR,. films thin CulonfS , condtuhcet ionv ity doping oxygeannd sodoifu m Effect 3 ewewse ne hernee meee eee eee et ee o6 c BOUND PE, eie cells solar CdToen /CdS contacbtsa ckt he of stuAdy a a R cells sol— ar Culinn S,:Ga/Ctdrsa/nsZpnoor t Current E TCT ETCE E EEC PEReLeeE ee Se E processintgh ermalr apibdy preparceeldl s solar CuGaSfer,o m results Some eee eee ce 20.00.00. .....KF.. a.rg. ... Lux-SCthe.i nMe.r , HarneWi.t , Saad,M . WebeMr., EnnaAo.u i, analyslioss s and performandceev ice properties, electronic kinetics, growthc ells: solar film thin efficiehnicgyh f or Cu(Ionn, Ga)(S,Se), Zn(Se,OH),d eposibtaetdh Chemical eeCEECTeOSCeeeTOTeTeT epCP cCaotdieCehxEuhnehanfEyp elfald se ernc ircaSueeaeecaticl es mta,ee dmpeet PdCaCiNrnoooineolnad it po wnfi d Tzanenedo aHunger, el ELleiwmeerre,n cz, tSKruo,s t, degRDADHRS0ceeeeeeec.e......e ehJe e.. ecee. r . .c. tt rrissao Structure of extended defects in epitaxial CulnS,/Si(111) n i n C0eeenaeee.seee0 00 SABlecbkhek6rentr,s, , Witcomb, JM.. J. JEB.V..Hu .c .her. . Control of Vs.- defect levels in CulnSe, prepared by rapid thermal processing of metallic alloys A.B auknSe.Sc ihetbe,n AtGr.ei trth,Wa .rH dar,n Se.Bi rt,e hJ.mA leb,eS r.Rt u,s hwMo.rCtLhhu.x, - S.t . einer Defects in CuGaSe; thin films grown by MOCVD eeee eS eee ee eR e AO REA6 Oe eee e eee e Recrystallization in CdTe/CdS EA.J aseneUk., R au,V .N adenaDu.,T hiessH,. W.S choc.k. ..2....c .ecee e.ee e ee.e ee e.ece.e ... Electronically active defects in CuGaSe)-based heterojunction solar cells EE BS a ae ea ae ee ee ee a Effect of the Ga-content on the defect properties of Culn,-,Ga,Se, single crystals J. KrustokJ,. R audojaJ,.- H.S chénM,. YakusheHv., C ollan.... 2... 20...0 ... cee ee ee ee The role of deep donor—deep acceptor complexes in CIS-related compounds I er a er ee an ae ere a eee ae e ee eeee ee I.D irnstoWr.fB eurr,k haWr.dK rti,e gsIe.O isst,e rreHi.cA hlevreD,s. ,M H.o fmaOn.Kn a,A, . P oliBty.,KM .e yer, Annealing studies on Culn(Ga)Se,: the influence of gallium R.N.B hattachaJr.yF.aH ,i ltneWr., BatchelMor.,A .C ontrerRa.sN,. N oufiJ,. R.S ites... 2.... .0......0.004. 15.4% Culn,_,Ga,Se,-based photovoltaic cells from solution-based precursor films eee,e, OrO, B6 ighoo sohe e ee h ee eeG e Oe eeeOe ee ae Electrodeposition of ZnTe for photovoltaic cells ek ee be ad ee Oe wDA RM RRR Re Ree ee ee eae Chemical stability of Sb,Te; back contacts to CdS/CdTe solar cells G. Contreras-PueOn.t Vei,gi lM, . Ortega-LopAe.z M,o rales-AcevJe. Vdiod,a l,M .L.A lbor-Aguilera........... New window materials used as heterojunction partners on CdTe solar cells IEEE OO ee eee ee ee ee eee eee ee ee ee ee Transient capacitance spectroscopy of defect levels in CIGS devices Vili Contents 8 8 6 6 4 4 4 4 478 473 458 454 450 446 443 437 4..32 426 420 415 411 406 400 396 388 383 378 371 . . . . . . . . . . g in e Al edafelsoecrutrre iqibausivi nfargirte loPhmaeumeb bu nllprteieos sqn uh eesrt . 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BremerJ,. -H. Hahn,Th . MetzHn. er, films CulnS, grown epitoafx ially properties electarnodn ic Structural ee ke wa ole de ba oo Sa Sky a eeen esig CuGaSe,a nd CulnSeo,f profilindge ptfho r etchiionng nitroofg en investigraatimoannas n d XPS g k o ee e r eke ee ee o ee yi oe e s n e g e r r o rs. 555 553 540 533 527 520 514 509 504 498 60eT5So66DaEEaOEe : 0k4 4 -OAg7NeNe 0e Y4O EeOe3