4 - 6 6 8 0 0 ) 9 9 , ( t 090 taed , d, S004PI0I:- 6 31 D.M., Folls vii J., Floro PF.a,l aras, 194 40 S., Fafar DE1.u0S1n. ,FE7, .r1 ,n s106 K., Endo, t, Ederer, D.L., 106 Economou, D.J., 146 DKY8o.i1, nm ,gRD4.e 6,s aDX8ie.5,,n gDP1a,.2y B6.a ,l , Cornet, A., 61 Cockayne, D.J.H., 40 ChockalingMa.mJ,., 1 40 Chen, H.-Z., 134 Chaudhuri, S., 117 Chang, G.S., 106 Carter, W.B., 153 Buguet, S., 228 BK7.1r, u nBG1nr.3e Wor.wBower, A.F., 8 ,,n , Bourgoin,D ., 246 Blank, E., 200 BimbDe.r6,g6 , BhatKt.2a,63c ,5h arya, BhatAt.a2Kc2.h3,a rya, Bauer, G., 71 Baubet, C., 228 Balakrishnan, K.S., 91 Bachmann, K.J., 53 Arbiol, J., 61 Arai, K., | Androulaki, E., 194 Ahrenkiel, S.P., 31 Abstreiter, G., 71 EVIER LX.iZa.o,, 40 Li, S.-y., 113 Leon, R., 40 Lee,Y .-J.2, 37 Lee,S .Y.,1 01 Lee, S.R.,3 1 Léonard, F.V., 46 KuroyanagiK,. , 187 KE.uZr.m, aev, 106 KP.uSm.,a r, 126 Kumar, A., 219 Kukta, R.V., 35 KrishnamM., 85 Kobayashi, Y., 76 Kim, S.Y., 106 Kim,J. ,1 46 KienzOl.e,7, 1 Kester, E., 228 Jones, E.D., 31 Ji, F., 113 Jayachandran, M., 140 Janzén, E., 158 Jain, K., 91 Jabbour, M., 26 Ito, T., 76 Ide, T., 22 Ida, T., 106 Holy, V., 71 Hoffman, D.M., 146 Hiskia, A., 194 Hawley, M.E., 13 Haouni, A., 200 Hanada, T., | Hackney, S.A., 85 Gillot, B., 228 Ghanashyam Krishna, M., 223 Georgakilas, A., 61 Author Index Thin Solid Films u ParkP,a ndPaal,, rth of 357 y PT1o.5lA3l. PDe1,.oy5 Bk,3.e PJ2,r.i2 Sl,3.l ,i PP2 e.e4r,t2, k FP 6o.e1,vi r,PS2o .a4,,r 2 v C2a.3n-7Oo S1.v.4,,,6 A11.7K .PB1.,é5,c 8 z , Ooie, T., 172 , Ohtake, A., | Ogino, T., 76 Obayashi, Y., 57 NA.oGr.m,a n,31 NarayanV., 53 Nagase, T., 172 Morante,J.R., 61 MogodaA,. S.,2 13 Moewes,A. , 106 MizutaniN,. , 187 Miwa, S., 1 Mirecki Millunchick, J., Michler,J. , 200 MichelakiKs.,,6 1 MermouxM.,, 2 00 McLaughlJi.,n1 ,80 Mascarenhas, A., 31 Mandal, S.K., 117 Mahalingam, T., 140 Mahajan, S., 53 Ma, J., 113 Ma, H.-l., 113 Lyalin, A.A., 165 Lucazeau, G., 200 Loubnin,E .N., 165 Lockowandt, C., 158 Lobo, C., 40 Liu, Z.H., 180 Volume 357 (1999) 254-255 a 3 n, 1 TurgTheeoins,, 106 R.P., Winarski, 106 C.N., Whang, 146 B.H., Weiller, Wang, M., 134 Wakiya, N., 187 YKv2.ao0,en0 n VC 2e.o4,ld2 , e nichRT3a.w1Dr e.osS2,vt.4 ,,e6 n 1C,3. D.TP2,ha2. i8,l hadesSyvajarviM,. , 158 , SD.wJe.,n son,85 SunandaCn.aS,. ,1 26 SumitomoK,. , 76 Sukidi, N., 53 Suh, B.-S., 237 SubramaniB.a,n1 ,40 Stangl, J., 71 A.V., Simakin165 Shukla,R .K.,2 19 Shintani,K ., 57 K., Shinozak187 Shimizu, K., 22 ShchukinV.,A .,6 6 Sharma,R .K., 91 Sharma,D ., 219 Shamin,S. N.,1 06 ShafeevG,. A.,1 65 Schlom, D.G., 13 SanjeevirCa.j,a1 ,4 0 SakakibarJa.,, 1 72 Sakai, A., 22 Ross, G.G., 246 Rosenauer, A., 18 RJ.eLn.o, , 31 Rastogi, A.C., 91 Radnoczi, G., 158 Radamson, H., 158 , i , , a v kimo an, gas, a u a Y X X , , . . P Y . A , 87 . 1 R 4 9 8 1 5 1 , a d , , u , g h s o n e a a a Y Y Y Y 13 J., T., | T., S.-L., 4 | 3 1 r o h t u A ng, ng, n, ndex a a o i h h o Z Z Y , ., .-h. S., J D 5 1 8 8 3 1 1 , , , g g , o n n u a a a o h h h Z Z Z Z 40 J., J.F., Y.W., Y., 0 8 1 1 3 8 6 - 7 6 8 0 0 0 ) 9 9 S004PI0I:- 6090( 1CcbftozoDh3iixfoeyVil2n ipm Dnm cdodvbcC s ,eseahu o ippesmotom2iccsaiftbsiornhi0oioqiun ilo ll2cnuossmtuno taoatazobEe,n ittr hxanlnfi elo ioieiioid rheuond oddn caciCsne eiinoovths cnn nri l giooo1mfaboM uco6urtibygr6mhirocs Oc de mrePeobgaNe(emipfborneur 1 iic (dhvscotc 0 Zaelc1nwaariv2ed0otxal5,ia ph)i, Totaayatff irilin,rem) lodo tmmOn mntodvrctLos, ii feaaheo -t/t ppemkwr a oompidvCi nsrieesadhii epcrp(eut oaoae2Mbfmmisrtlit6yi oOi lu h cnmtrCytcogomsmAa siehlffturoo V loi e mlodm nnDptewekC p-it,itlhfosnhh e lehpuy vc2motyelna4hiiwbcar6edc crivdbpims mdcwi aeeaylo iiihudlpspu adtcecio oshsozampefcahoCs u )miraliafdhymirlotta rca dto m-iibra-ihCrrs otoaleoyoh pnanc nbngeshnt r1tlahtciem,oeitian0reoa ni ruudrg2amwnac:rii mnsp shbdfCNtca izzs epiieaydeeelapaulrgpnr dTod tttma hooCfr sitie t-scitd eoo ulpir rnnTrmrty- e ee esmoalrnsaptdy6a he1br oi lliotgy,y , sdt s aulsounre fffae4cce0rtt 0aishnn— eb g5 ue6If 0fn°eArCls:A s rlei ntaenmgdpr eohrwoaonftm Cuoorgmeep-nagerroaiudsseoldn y e Buffer Rsidfetonaimrsi r1lneoii8amsdddg9mss eiu :olna nslld i ng, Bending ytterobxiiufdmiel m2s1,8 optical saepbdusgtoetr eprteido n Variabltiebho einna m in structurBea nd propertieso f TiO, films, 173 Preparaftriaocnts,au lr famcoer phoalnodpg hyo tocatalytic MgO(1o0b0s)e rvbeyad t omifocr cmei crosc1o6p6y , Nucleationa nd growth behavior of epitaxial Pb(Zr,Ti)O;/ epitaxy, 13 surfamcoer phoolfBo ig,yT i;g0r,o.wb nym olecubleaarm Atomfiocr cmei crosecxoapmyi naotft ihoee nv olutoifto hne Atomic force microscopy Tex) Ags, 214 Transientp hotoconductivitiyn amorphoust hin films of Se;; Amorphoutshi nf ilmso f Se7;Te2,Ags Cu: the effects of Si content on the barrier property, 237 Co-sputter deposited Ta—Si diffusion barrier between Si and Amorphous materials short-period AlAs/InAs superlattices, 31 Photoluminescence studies of lateral composition modulated AlAs/InAs superlattices Subject Index Thin Solid Films o 35 AIo,nO ;D:LTCi C 20i2o ncsh,l coorinsdtoeala iuiqnntfu iiieonlongmsu s oxiadneto hdaei ncd ziofr cobneihuamv iEoluerc trochemical ZroOf, Dissolution Rsideftonamiisrr 1nleoiai8smdddmg9ss eui o:lan nslld i ng, Disclination property, 237 CteoScotbfihhanouff eer n: e rt cietensrt Cdeop-osspiuttetde r dbbSaiaine rfdtrf wiueesrei non Ta—Si 125 nia, aamnmdo - teftrfroiamlkm is s(ethylmethylamido)titanium nittroiiftd aedn evipauopmcso hiret tmieLiomconpa wel r ature barrierD iffusion 35 sion, growth influenceutcosadstihnfno rfed dmef esubrs-i ned scrtyespt al tmfmlheoorddweie eal-t deidmAo ef nsioepitaxial film, esnttr ained 8 Three dsoifiac nsofioi lh mrmaeumenrland-ats tiiiooonnn asl Diffusion hydroc1a44r bons, tlirqaunisdp arent isanurtboesmrtafrtaaictcee oaw ift h Dueppoons ition othfe odfliairfislr aemamrsdo inatdi-olni ke Dfiilammso nd-like Rsideftonamiisrr 1nleoiai8msdddgm9ss eui o: lan nslld i ng, Diamond film moinc-rgorgoruanvdi ty conditions, a13n7d SitoSenlrgfiupvau riCneycto dsetawteruxisrnrig a aallt ion 53 Si(a1n1d1 )S,i (001) Ogrriogwinn s defects oisaGionesnfsa ll sPfae nmdsb led Defects ducting CulnSe, films, 179 deCpoumsellitnafaty tolefehrr edo s o rs fme amtiicoonn - Grpohdwauestrlehies nsc get lroveofnac ichzeuamutiimco anl CulnSe,t hin film irroasdfoi dla-etgprieorinlevf ceiud1l5 rm1ss ,o r An oavpetppolrr zoeoipanxfacciierh ldxem el csa :is emre r Crystallization sion, 35 growutnhdte hrce ombiinnfeldu oefns ctreesas nsdd i ffu- At hremeoo-sdfdtfe ielmlpmoe ewcd nriysasittoeanlda l by MOCVD, f2i6l ms Am ultisspteecpi-mefosld ooewfgl r oowftc ho mptohuinn d Crystal growth Cut:h eef feocftSs ic ontoennt th bea rrpireorp e2r3t7y , Co-spduetptoesTria t—edSidif fubsairorbnie etr wSeiae nnd Copper tures, 242 DCc onducitnti hvteih tiyn- fAill-ms~:( Ge—stSreu—c-B )—Al Conductivity f Volume 357 7 (1999) 256-260 n a l e n i l l l a l a , bpvddcMewtalorganic chemical vapor deposition eaylihupp atecoohsmeCohacfpCu: the effects of Si content on the barrier property, 237 su mriifhadymirola car dto aH-mrab-ctCof-sputter dieposited Ta—Sri diffusion barrier between Si and r smyhaoliaeoo pidolcn rnngnhmtrr b 5SaMShe oeoopi3einanrun( gt(dhnai1 sa0 eOodisaGigootcz1l0nense rfnsrauee1a ll1 lfi asoPsd)dtfmHai)egtermicrogravity and ont-geround conditions, 137 w, in z iciiler mendotacgnesasbd nstcrhson Structurali nvestigatioonf SiC epitaxiall ayersg rown under l i tl oseorumsndotMbmicoaf1 Liquidp hasee pitaxy n iigysoo6tb ocsQ r6posnircO mysion, eNagboe3P5 eoo(ipr fnuebr nsi1cv dch(o ct 0e ZalGmgrowutnhd ethrec ombiwinnefldu eonfsc tersea sns ddi ffu- ao0drveretxp ,ia)hoicyyTfot tfmoA tt1Ohraee-dimmeondseoiflso tneafpll omwe diactryesdt al wh,-iirhhi1lfoental Ai1e ) o r cmhn G ngOnmLdeifneec t s h rli; a,aa/ stn vimGsmdSmgla7ttice-milasymear5ts7c, h ed iio6eu iureemns lg/ro c etrGimwAnisotsrtaobpmiailncia tlyoy sfsi ussr fuancdeu laoGtfsi tornasin ed htieente eeal grghgcreapnaa y,rLasGttice-mislmaaytecrsh ed 8iphlhmyti e nt7eliaaei args ot-rsonaaymnairratdiatpoaifoas no lw-agedle trivepndro ecurFsfoilrm s1,5 1 S enitissox irf naioann- , iisre dnrtue s aoenfm oAn ovaelp protoap crhe pzairnoecx ifdiel mesx:2c ilmaesrer mdhelmnsacs 2 a wp c hc taeaeaLirarsaedri astioSn oiGisoiN,irysutnlns ifmaeoa rr l e( ann t-aa 0 Ti, G, 40;t hinf ilms2,3 2 gi oin0noiemd1 n ner)PLfteofd5o SaSgt mi3in ea( (dr10n fluence Lasoerg iGasidoO-10nensefrisras1 l1 lf isouP)cfa)eghydGirocarbons, 144 ew, mna cis amndt llnsbP seas inoattf re saruwfnlbiasaistcprqtheauro riamedtan ett i c l n edsd Deodpfifo uailspilmairmoosottrsenfhnia r eddo -inal tiikoen SXfmopf9 io1lf-oelf urlamtoLaser deposition aFyss ryli,ue umresfos8eigqruoawntthu m pedots, ciInGaAs/Gao4Af0s ntr dilemtretem naesadsoifc,Tia shape cinieIsanfsunsflrdteaf acnabtdcis tl ainttie-slxit inh kee nsocifoihne ilthm errme aaeusmneeFedlnrlIslsahndai npset abilitieis ace ln d-nate es iti miytterbitum ifilms, ooxide 218 eoeonnn n tfa2saepbdusgtoetr eprteido n optical saiVboaenra ima ble itnh in sl2 c eiSNosGiosi,miuIonb etasmpu ttering nsn faera(r l n -a0Eag oiy-Agl n0pifilms, tofmhfoee rc mhaatnioins mt1O h1ni1n nmd1in e)tg4g ta lodization 6rex orydSodewa -pruep71 Si, orie(n1t1e3d) tnisdrcohdteicEgon, arnparmtviocni nsaulp S eoirf/lx SaiitnGtveiSe ctsertsui cgtautriaoln igilopiant aewonSfa1gmorphology l tsInterface eix1 n hliio9SmEp atSS uSaotmoesrlleniredateinhfosdegfft i rer ncoi1ttwb8e ut rthriu opnt iohns, asnffn, oe, ,eot d Sp c Een eeducting tCulnSe, lfilms, rinldaiteursmae lg rehgeatteGiroaonAs,ts r(u0c01t71u9 r)e s: r reitoacidlldaeypeorssi ted tIinnG eaAsd/i stirnitdbhouieft u imomsC aeeuntmlnain lc a osnlc-y aslieAs t omftofoihfore r cmat ion e rspo odvaocf uum sIelneniGzaatieAolne csdtur roicpnhhgea msieGcsra olw th seipto40d otsq, uanItsEoelunlefecmnGt irgz aoactrhiAoeonms iwc/atl Gh aAs isointtures, thien effects surafnadc tainnts-tslahibkai Ilepsi etl iaensd 242 ionconductivity Al-(Ge—Se—B)—AlI struc- dots ittqDnhhC eiu n -failmns:t uImn GaAs/GaAs 83 reactieoxncA,h smae/aanPsnud gr eeme nptrosp ertiEelse ctricby inddoutcse qdu antusme lIfno-Afas s csheaSmnhbgalepe de98 method,e vbayp oraptrienfpgia lrmesd Z naOn:dAZ ln O quantptOcrrpouoatnpnidmescurpact altir ieensn gt dot electronic InAs/Ioafnn d P properties 83 reactieEolxenctcA,rihs caal/ Pn ge ittnregam:np seproarttu re, by inddoutcse qdu antusme lIfno-Afas scsheaSmnhbgalepe decl aorwr ier a1t0 2 dot quspauttnert- huibgIyhm -np rAdeespssfouisr/liemtC sIe ddTn e GaNaAnoscr ysta 61 stalbaiaylnietdry , morphologEylec tricconductivity surofn acee ffects 400—r5a6nt0gh°ieenC : bufferIsn AlAs 208 film, thin bpprhoitldhygameledor c yanine ethylenediamine temapnedr gatruorwen- grahdoeomfd ogeneCooumspslialiycro ni son InAlAs/InP of property phaontdo conduccthairvaec tOerriieznattaitoino,n 202i ons,c hloricdoen tasionluitnaigiqo nun fesio lums orientfaiteilodn Electricoxidea notdheia cn d ziorfc oniubme haviour Electrochemical study, Impedance 159 micrcoo-nfRoacmsaaulbn s trAaIot,neO si;t—e:adT iC PECVDf-ildmes poDsL-oC f microno strucetffuercet wear The h2vcy4ahbr6eri mioiduciSubject index sza alt ions, b,_,La,. hlaeus eenrc e finofe relmceatc ttiriocn f n o i t i s o 232 films, thin »4O; Ti, thin sputtered beam ion in edge absorption optical Variable 98 method, evapboyr ating preparefdi lms ZnO:Aaln d ZnPbO,_d, ioLefal ,e.cft otrrhoiemnc a etfifoefcnlt uL eansceer microscopeyle ctron Scanning conducting transpoafr ent properties electronaincd Optical propertieOsp tical SnSe films, 119 Rsidfoam1tnof iproperties matertihael and SnSeS e, Sn, of r8Eleectrodepnoir li9sddaemg i eRsssmidt111 films, thin y-Agolf lmecsheanism formatthieo n On :onru slsenaiis1s dldngap stband Optical5 u gu9ad, ioAscmyl tnuoIi, e bn,c dPsfemDTwoofO rEtfoinifeh;Lofrl cC cae:eCsam-arrVR1 mfaboTMccstl Ro 6ottibayDiga e sr 6aocst CQms-ct mmtPeorebgaN— Oaedrepifbenrouara (uneric (dhvcs on1ecit f p Zaes8elcwNp 0tanintrv edooutixlgu0tr,ia tcphmis r )aToatn,Tdsoifiacla1y e-i i xinrsilo2ifhoie, na il) 5hom rram e,aa Oeunemtebaea |dtfflnr,l aepi innreemd -/alit odso tam bim Gttin imZsntomsodvcrtLmcosyaiaoi un oeaohfmneiaao xo- t nrApplnlemk oStwyrqnf loosaSfoZempdoaNioaei,s uaysrnofiloietce(dst nn cai t te r ocrlu(0hiCesQt rnmmaafld8aeGesip 0su diiuato-nllptt7-athe 1mdo Sltitr uauarah-e)n o taiers mstpaaywatnnoFsS ya ios oeisernf l aa ostnxn n re- ednm,rtie u en s moSoft X-earay fluorescencem easurementso f polyimide films, 91 pNmdhmscelabs taaw h tpclhtnaPolymeres taaey1coamioyserld3olnions r ae7n adcnc-nt d muglre208 Sofilm, ithin S agiiaptnnfiiorlrtoiyrv dCgdoeoinNteuee roethyblreisnidelpgdihecitdoa hnpma oilnloeyc myearn ine w uoar casra)nnxnsttn vtis udihoiiaOricehnatraaaptncihdtoo enptr,rio oozcfpao tenirdotunyc, t ive ,1rg yptlt 4aad iyl4atphthalocyanine Polymeric r pnoriented alwtfhiilnms taioio ieuniiorrfcqtbtna usoauesh nmm toilduucting fCulnSe, films, 17d9 oDirtr sahari ffpeidfrbpserlt poa aaeao Namiodeposited Culn mnetal layers for the formatiocn of semicon- mtrrdsnacese oi ens inano,ttGrpohdwautesrhlei1es ncs gte lroevofnca ihczeuamtuiimco anl t latcidtp tiian0reo -a orga2omwlrnr:Polycrystalline n np sceolllasr shbdfCNi ti s epiieaykedipulrpgrne coThybridizations, Ntma ohovc2a4hr6ei moiucsa l rltesats-ctee n uip rrsortry-dubcpyel da scmhaev-maedipnecophauwoalirsnt ihct eido n ceee s,rdst yby saMOCVD, Charohafyc dtaermrocoigarzferaippnbltrhaomoiotsn-o ue nds f2i6l ms sultrlavdeappoosri tion eiPchleamsimcaa-le nhanced thin comopf ound groowft h model step-flow mulAt ispecies l nse ssuhpoerrtl-aptetriicoeds , Multispecies A31l As/InAs Sarerlafy-so rdering islands, msturlatiinsehde et io26nf6D Photsotolulfdua ictmeeoirsmna mpleo osdscuieltnaictoeen d studies arrays PhMuolttoilsuhmeient escence film, t2h0i8n Resisdturaielnsd s i amfiolnomdsr:i gainnmdso del1l8i9n g, Morphology ethyblreisnidelpgdiheictdoa hnmpa iolnloeyc myearn ine sdgeurgroriwentggha ,t ion multilayer Ge mS76ie /cGhea nism Oricehnatraaaptncihdtoo enptr,rioo ozcfpao tenirdotunyc, t ive Phottoecchonnidquucet ivity Monte Carlo Ags, Tex) phase-separation in strained epitaxial G2e1-4 Sn alloys, 87 Se7s of films thin amorpinh ous photoconductiviFtoyTr rmaantsiioenn ot f nanoscale trenches and wires as a pathway to separation Monochromatic light Phase morphology lstaaybeirl ity, T-»i4,O ; films, and t2h3i2n 61 Pb,_,La,. Lfetfhlafeuse eecnrtc e InAlbuAfsf ientr hsre a ofodn4infoge 0 erl0 me—ac5tte6irfi0ofcn°e o Ccnt:s su rface Compaofrh iosmoong egnreoaowntunde s mlpye rature-graded Pb, _,La,Ti,—,4O; thin films epitaxy, 13 surface morphology of Bi,Ti;0;. grown by molecular beam 223 troscopy, Atomic force microscopy examination of the evolution of the Fe,O,4.5 (50) thin films studied bn X-ran photoelectron spec- spinels Co,Cu,Mn,beam epitaxy, | Cvadiaansltdtei rnoicnbi uetsi oitnh e ically smooth ZnSe surfaces on GaAs(001) by molecular Oxides Self-assembled formation of ZnCdSe quantum dots on atom- 223 troscopy, Molecular beam epitaxy Fe,,O4,5 (60) thin films studied by X-ray photoelectron spec- growth, 46 Catiovna lenciaensd d istributiin otnh es pinelCso ,Cu,Mn.. Spontaneous decomposition and ordering during epitaxial properties of TiO, films, 173 Molecular-beam deposition Preparation, fractal surface morphology and photocatalytic microgravity and on-ground conditions, 137 Oxidation Structural investigation of SiC epitaxial layers grown under properties of TiO, films, 173 Microgravity Preparation, fractal surface morphology and photocatalytic As/P exchange reaction, 83 Organic substances Shape change of InAs self-assembled quantum dots induced by ytterbium oxide films, 218 258 Subject index .n Strtarnasnfsokrim—aKtriaosnt anovm orpholoagnyd layers tabilit6y1, reatdenhiofgdesffir te no1rct8wtie btruhrtu ipotni onsIn,A lbuAfsf ientr hsre a n4g0e 0—5e6f0f°eocCnts: su rface GChaoeAmstpseleaiga(rrtnri0oesedsr0oogiatnf1alu rh )tomumi c ootgnue,nre eosu:sgl ryo wna nd temperature-graded analysis face, Asotidhcifnteas do ltimerui imbc u tion iInn GaAs; 22 13 epitaxy, Nanometer-scale imaging of strain in Ge island on Si(001) sur- mgbyro orwpnh ology Bi,Ti;O;. smuorlfeaccuel ar obfe am redistributioann d the effect of growth interruptions1,8 microscopy Afeoteothhovffxteero ao clmmeuii tncia otni on GaAs(001)h eterostructuresse:g regation,la teral indium growth Stranski—KrastanoAvt omics calea nalysiso f the indiumd istributioinn InGaAs/ microscopy Te3lrea5cn tsrmoin ssion sion, growth utcidihnnofefdmf leubur-ie nnceeds osatfnr de ss Tex) Ags, 214 scrtyespt al three-dimensiofmAmonlfeo ao ddlwie alt ed Transienpt hotoconductiviint aym orphoutsh in filmso f Sey; by MOCVD, f2i6l ms Transientp hotoconductivity Ams umtlogoeotcfrpdfti ooh- esmwifplntlpe hoocw iu ensd propertieosf TiO, films, 173 Step flow Preparfartaicostunalr, f maocer phaonldpo hgoyt ocatalytic Otfnhome r eoymftc-fah 1Ahioit1glxani1iml ndo sIe,ni sm Titanium Stacking nia, faul1t2s5 ssuhpoerrtl-aptetriicoeds , A31l As/InAs filfmrs otme trakis(ethylmaentadh mymloam-i do)titanium composition Pslmatohtudoedrutialoelsal tuemdi nescoefn ce Low temperatucrhee micavla pord epositioontf itaniunmi tride Scopmopnotsainteioouns lateral modulation nitride Titanium growth, SnSe fi4l6ms , 119 Sdodepruepidrcoteionarnmtxigipan aonglse iotuiso n and ElectrodoefSp nS,oe sS,in tSaienot dhn me a teprrioaple orft ies Sdepcoonmtpaonseiotuiso n/ordering selenide Tin phiasnets 2pGre6aia e-8ltis-7laneoS xeypnidsaa M,lr O aCbtyV iDo,fn il ms pathway ontawirfnare dnen oscs hceasl e Faats oo rmation Am ultisspteecpi-mefosld ooewfgl r owoftc ho mptohuinn d SnTdie frfruascieo n 53 Si(1a1n1d) , SiRe(s0isd0tur1aeils)nd s i amfoilnmodsr :i gainnmdso del1l8i9n g, Oodrifseiane fGg silegaissfocrln Pnetaos msn w bdnls ed Temperature gradient Ssiulbisctorna tes lattice-mismaltacyheersd5, 7 moinc-rgorgoruanvdi ty conditions, and 137 saAtnnaaiblsiyolsititrsyo pic ssoutufnrr dafuialncaeetd i ons of investigation elgpariyotewarnxsi al SoSutfnir dCue crt ural Surface undulations carbide Silicon layers, 5l7a ttice-mismatched face, 22 storfa ineudn dsuuolrfaf taiaconean lssy tsaibisl Aintiy sotropic NaiosnmiGftinoaoSres snmgail u iei(arnn0n-t d0ge 1 r)- scale 13 epitaxy, Silicon beamm oblye gcruolawBrnio ,fT i;0m,o.r spuhrfoalcoeg y (113) Si, oriented 71 thoef evtoholefu tioenx amimniafctorriocoAsent c oompiyc SitnroSvusficueo v/tnpsiSu etcirriiGalngelaaa ltt tiiocne s epitaxy, beam | superlattices Si/SiGe molbeyc ular GaAons (001)su rfacZensS e smootihca lly sdeugrriengga tion mgurlotwitlha,y er GmS76iee / cGhea nism atoon mdo-t s quanZotnfuC md fSoer matSieonl f-assembled Si/mGuel tiglraoywert h morphology Surface Ase/xP chraeancg8te3i on, 223 troscopy, Scqhhuaaanpngete u m by oIsdiofnent Aldssfu -caesds embled spec- phoXt-boryea lyse tcutfdriitloehmndis ( n 6 0)F e,O,4,5 Shape Co,Cu,Mns,pi.n etlhse in distriabnudt ion valenciesC ation Seimnlauo f2rlsf-irDtt6 saori 6lyrasa sdihn neederesdi,t n g composition Surface Self-ordering epitaxial film, es8nt tr ained 35 sion, coah eirn - formaitsilooafnn d simulationdsi menTshiroenea l growth utcisadtihnnnorfefddmef l esuburs-ie nnceeds of Surface step crystal tmhordeeel- dimensioAofmnlfe ao dlwi ated 98 method, evabpyo ratinpgre pfairlemds ZnOa:nAdl ZnO Self-force conductintgr aonfs parentp ropertieesl ecatnrodn ic Optical ducCtiunlgnf iSle1m,7s,9 properties Structural dCemlupeftalfotohyoonsrsaeef ri le r mt msaei tdci oonn- 71 Si, oriente(d1 13) pduhraisnegs Gelreocwttrho chemicasovlefa l ceunuizma tion vicionna l superlatStii/ocSfei sG e investigaSttirounc tural Selenization investigation Structural tures, 242 35 sion, DcCiottnnh Ah edils unt-c-r~ftui(icl-Gvm iest-:y S e—B)—Al diffu-a nd stresosf influences combtihne ed under growth Selenides crystal mediatfeldo w step of model threAe -dimensional ginrtoewrtrhup tions, ratefhenfedde i cstt ribution o18f Stress segregation, GaAs(001) ihentdeiruoms tructurelsa:t eral 40 dots, quantum InGoaf As/GagArso wth Asatcotnioafdhanlmi ielIednis yn itcsGuri aimsAb ust/i on the in effects surfacatnadn t-like instabilitsiheasp e Island Segregation 259 index Subject es ns, r al uum nci eb|ptures, 242 eiatZsiamconductivity Al-(Ge-Se—B)—AlI cxsDtCru mc- ittnhh ein n-films: ayoSl,oel fWuonrckti on yt hZ hydrocarbo144 nCsaifdintoeafrt franacnsesu pbwasirtltreihanqai tturei o dm atic oq SllumuebEeDueppoon s ition ttodhfie a mond-lilfiokairfeslr emarsd iation eloiehuocaZsncoatings Wear-resistant tvi sri roocstudy, 159 cuohrne iitoendA I,sOu;b:scTtoirnaCmft ioeccsa—rlao -Raman muimc Twheeefa ofrmne ictc rooDfsf LtiPrClmuE scC tVuDre- depaos- l fZaZtest WeainnnlOdOm: s A lIoZ xi(113) oriented Si, 71 indee StrucitnuvrestoifSg ia/tSsiuiopGnee r loanvt itciicneasl yof(113) iVicinal xtlitmdeaoVserpbaTex) Ags, 214 , tb rsiiioYophotoconductivity amorphous Se;; cTransient uin atfohrifil nm s xtambpitll tde eievapoVreaatced r o bnSnSe films,i 119 irradioafst oilo—nd geerli pvreedc ufrilsmo1sr5,1 um An ovaeplp troop areczphia norcxe if idleem sx:c liamseerr sXVacat223 troscopy, RudDi Fe,O4,5 (60) thin ilms es triabnudt ion valenciesC ation Self-ordering in multisheet arrays of 2D strained islands, 66 X-prhaoyts opeelcetcrtorsocno py islands Two-dimensional SXof-fltru aoyr esucreenmceen ts microgravity and on-ground conditions, 137 emissioXn- ray Structural investigation of SiC epitaxial layers grown under 260 Subject index fd s s surfaces ie di ea prepared 218 ud m of t containing edge s S) zirconium P X Gona As(001)c hloarnidd e ebvya porating biinoe na m by X-ray toelectron i.n etlhse in ( ofo lyimide o ,p p h ns the p M , u by ionsa,n odic method, sputtered o,C s, molecular spfi1odori5reflel1rr —mc aisgudv,eri elasd to iro n C lm i 202 f - oxide ec thin sp 98 1 bDCc1ozotfeyihi3xVfop inl2i mDoncm db , sseu i sttiioon n 9 qdoaSfoZunoftoena t orlCsnmmf dt-a-S tuaeismo s ne mbled apentzoflArpoiaioxx ep lsnvicpmercedisar ole:m ra eec rh Optcaeorrpolnfoatne dpnidc escturparctalotir nieeinsncg t EpSSoSatmorlenhaffnnoe,,et dSp c e eetrr ritoaidle esp osition