an “ah ul ELSEVIE Volume 336, 30 December 1998 Preface Self-assembled structures Shape, size, strain and correlations in quantum dot systems studied by grazing incidence X-ray scattering methods* T.H. Metzger, I. Kegel, A. Lorke, J. Peisl, J. Schulze, I. Eisele, P. Schittenhelm, G. Abstreiter Self-aggregation of InAs quantum dots on (N11) GaAs substrates S. Sanguinetti, S.C. Fortina, A. Miotto, E. Grilli, M. Guzzi, M. Henini, A. Polimeni, L. Eaves Growth of solution cast macromolecular 7-conjugated nanoribbons on mica P. Samori, V. Francke, K. Miillen, J.P. Rabe Adsorption induced giant faceting of vicinal Si(001) M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf, D. Kahler, Th. Schmidt, E. Bauer Novel growth methods Formation of highly uniform InGaAs ridge quantum wires by selective molecular beam epitaxy on novel InP patterned substrates H. Fujikura, M. Kihara, H. Hasegawa Retarded diffusion of boron in Si due to the formation of an epitaxial CoSi, layer L. Kappius, H.L. Bay, S. Mantl, A.K. Tyagi, U. Breuer, J.S. Becker Surfactant-mediated epitaxy of Ge on Si: progress in growth and electrical characterization M. Kammler, D. Reinking, K.R. Hofmann, M. Horn-von Hoegen Self-assembly and strain adjustment (poster session) Growth of Ge on H-terminated Si(111) surface K. Ishii, H. Kuriyama, K. Ezoe, T. Yamamoto, M. Ikeda, S. Matsumoto TEM study of InAs self-assembled quantum dots in GaAs E. Miiller, E. Ribeiro, T. Heinzel, K. Ensslin, G. Medeiros-Ribeiro, P.M. Petroff Relation of initial thin film formation to defects induced by low energy ions H.-A. Durand, K. Sekine, K. Etoh, K. Ito, 1. Kataoka Role of hydrogen during Si capping of strained Ge or Si;_,Ge, hut clusters D. Dentel, J.L. Bischoff, L. Kubler, D. Bolmont Cluster-size distribution of SiGe alloys grown by MBE N. Pinto, R. Murri, R. Rinaldi Structural properties of Ge nano-crystals embedded in SiO, films from X-ray diffraction and Raman spectroscopy A.G. Rolo, M.I. Vasilevskiy, O. Conde, M.J.M. Gomes... ..... Growth of III-V semiconductor layers on Si patterned substrates T.Ya. Gorbach, R.Yu. Holiney, L.A. Matveeva, P.S. Smertenko, $.V. Svechnikov, E.F. Venger, R. Ciach, M. Faryna. . The influence of carbon on the surface morphology of Si(100) and on subsequent Ge island formation R. Butz, H. Liith Composition and structure of Ge islands grown on Si(001) and of SiGe grown on Si mesa D.V. Regelman, V. Magidson, R. Beserman, K. Dettmer TEM studies of self-organization phenomena in CdSe fractional monolayers in a ZnSe matrix A. Sitnikova, S. Sorokin, I. Sedova, T. Shubina, A. Toropov, S. Ivanov, L. Falk, M. Willander Study of InAs quantum dots in GaAs prepared on misoriented substrates J. Oswald, E. Hulicius, V. Vorli¢ek, J. Pangrac, K. Melichar, T. Simecek, G. Lippold, V. Riede *Invited paper. Contents Orientation of aluminum nuclei on Si(100) and Si(111) C. Bisch, E. Boellaard, G.C.A.M. Janssen, P.F.A. Alkemade, S. Radelaar Epitaxial growth at high rates with LEPECVD C. Rosenblad, T. Graf, J. Stangl, Y. Zhuang, G. Bauer, J. Schulze, H. von Kanel Structural characterization of SiGe step graded buffer layers grown on prestructured Si[001] substrates by molecular beam epitaxy E. Muller, R. Hartmann, C. David, D. Grutzmacher TEM investigation of the dependence of structural defects on prelayer formation in GaAs-on-Si thin films Ch. B. Lioutas, A. Delimitisi, A. Georgakilas STM study of step graded Si,-,Ge,/Si(001) buffers M. Kummer, B. Végeli, H. Von Kanel lon assisted MBE growth of SiGe nanostructures M. Bauer, M. Oehme, K. Lyutovich, E. Kasper Coalescence of germanium islands on silicon C. Schdllhorn, M. Oehme, M. Bauer, E. Kasper. . Dislocation pattern formation in epitaxial structures based on SiGe alloys r.G. Yugova, V.I. Vdovin, M.G. Mil’vidskii, L.K. Orlov, V.A. Tolomasov, A.V. Potapov, N.V. Abrosimov Defect distribution and morphology development of SiGe layers grown on Si(100) substrates by LPE A.M. Sembian, M. Konuma, I. Silier, A. Gutjahr, N.. Rollbiihler, F. Banhart, S. Moorthy Babu, P. Ramasamy Annealing of CaF, adlayers grown on Si(111): investigations of the morphology by atomic force microscopy J. Wollschlager, H. Pietsch, R. Kayser, A. Klust. The influence of stress on growth instabilities on Si substrates L. Lapena, I. Berbezier, B. Gallas, B. Joyce Electronic devices Silicon quantum integrated circuits — an attempt to fabricate silicon-based quantum devices using CMOS fabrication techniques* D.J. Paul, B. Coonan, G. Redmond, B.J. O’Neill, G.M. Crean, B.. Hollander, S. Mantl, I. Zozoulenko, K.-F. Berggren, J.-L. Lazzari, F. Arnaud d’Avitaya, J. Derrien Assessment of transport parameters for the design of high speed Si/SiGe HBTs with compositionally graded base J. Weller, H. Jorke, K. Strohm, J.-F. Luy, H. Kibbel, H.-J. Herzog, R. Sauer Carrier mobilities in modulation doped Si,_,Ge, heterostructures with respect to FET applications G. Hock, M. Glick, T. Hackbarth, H.-J. Herzog, E. Kohn Simulation of a non-invasive charge detector for quantum cellular automata G. lannaccone, C. Ungarelli, M. Macucci, E. Amirante, M. Governale Growth (poster session) Domain wall splitting and creation of the fine domain structure S. Dorfman, D. Fuks, A. Gordon, E. Kotomin Pulsed laser deposition of SmBaCuO thin films A. Di Trolio, A. Morone, S. Orlando, G. Cappuccio Epitaxial zirconia films on sapphire substrates C. Mary, R. Guinebretiere, G. Trolliard, B. Soulestin, P. Villechaize, A. Growth and magnetism of Co/NiO(111) thin films C. Mocuta, A. Barbier, G. Renaud, B. Dieny Epitaxial growth of LiNbO; on a@Al,0;(0001) F. Veignant, M. Gandais, P. Aubert], G. Garry MgO surface microstructure and crystalline coherence of Co/Pt superlattices P. Haibach, J. Koble, M. Huth, H. Adrian Fabrication and electrical properties of sol-gel derived (BaSr)TiO; thin films with metallic LaNiO; electrode D. Wu, A. Li, Z. Liu, H. Ling, C. Z. Ge, X. Liu, H. Wang, M. Wang, P. Lii, N. Ming Two-dimensional and zero-dimensional structures of semimagnetic semiconductors prepared by pulsed laser deposition A.I. Savechuk, I.D. Stolyarchuk, S.V. Medynskiy, A. Perrone, P.I. Nikitin RHEED investigation of limiting thickness epitaxy during low-temperature Si-MBE on (100) surface A.l. Nikiforov, B.Z. Kanter, O.P. Pchelyakov Contents The influence of growth temperature on the period of RHEED oscillations during MBE of Si and Ge on Si(111) surface A.I. Nikiforov, V.A. Markov, V.A. Cherepanov, O.P. Pchelyakov Electrical properties of HgCdTe films obtained by laser deposition G. Wisz, I. Virt, M. Kuzma The growth kinetics of Si,_,Ge, layers from SiH, and GeH, A.V. Potapov, L.K. Orlov, S.V. Ivin Crystal microstructure of PbTe/Si and PbTe/SiO,/Si thin films Y.A. Ugai, A.M. Samoylov, M.K. Sharov, A.V. Tadeev The growth of an intermediate CoSi phase during the formation of epitaxial CoSi, by solid phase reaction MM. Falke, B: Gebharat, G: Beddies, S. Teichert, H.-J). Hinnebere ... . . se ee eee Valence band splitting in Cd,;-,)Zn,Te epilayers K. Cohen, R. Beserman, S. Stolyarova, R. Weil, Y. Nemirovsky Diffusion of Cd, Mg and S in ZnSe-based quantum well structures M. StraBburg, M. Kuttler, U.W. Pohl, D. Bimbers Epitaxial growth of ZnS on CdS in CdS/ZnS nanostructures C. Ricolleau, L. Audinet, M. Gandais, T. Gacoin Correlation between the sign of strain and the surface morphology and defect structure of InAlAs grown on vicinal (111)BInP A. Georgakilas, K. Tsagaraki, K. Harteros, Z. Hatzopoulos, A. Vila, N. Becourt, F. Peiro, A. Cornet, N. Chrysanthakopou- los, M. Calamiotou Allotaxy in the Ni-Si system S. Teichert, M. Falke, H. Giesler, G. Beddies, H.J. Hinneberg Influence of grown-in defects on the optical and electrical properties of Si/Si .Ge,/Si heterostructures R. Loo, M. Caymax, E. Simoen, D. Howard, M. Goryll, D. Klaes, L. Vescan, D. Gravesteijn, H. Pettersson, X. Zhang . Low temperature epitaxial growth of Si on Si(111) by gas-source MBE with heat-pulse annealing T. Ishikawa, H. Okumura, T. Akane, M. Sano, S. Giraud, Y. Nakabayashi, S. Matsumoto . Strong surface segregation of Sb atoms at low temperatures during Si molecular beam epitaxy Z.M. Jiang, C.W. Pei, L.S. Liao, X.F. Zhou, X.J. Zhang, X. Wang, Q.J. Jia, X.M. Jiang, Z.H. Ma, T. Smith, I.K. Sou. Island and wire formation Photoluminescence of self-assembled Ge dots grown by ultra-high-vacuum chemical vapor deposition P. Boucaud, V. Le Thanh, S. Sauvage, D. Debarre, D. Bouchier, J.-M. Lourtioz Morphology and luminescence of Ge islands grown on Si(001) M. Goryll, L. Vescan, H. Liith C-induced Ge dots: a versatile tool to fabricate ultra-small Ge nanostructures ChG Sennen, ¢. Eange. Ky Bber. ©). Kienale, F, Bist) 22 oh ee ea ele ie es Ee eee eee ess Lateral ordering of self-assembled Ge islands J-h. Zhu, K. Brunner, G. Abstreiter, O. Kienzle, F. Ernst Self organization of Ge dots on Si substrates: influence of misorientation M. Abdallah, I. Berbezier, P. Dawson, M. Serpentini, G. Bremond, B. Joyce Analysis and modelling of nanostructures Low-energy electron microscopy of nanoscale three-dimensional SiGe islands on Si(100)* P. Sutter, E. Mateeva, J.S. Sullivan, M.G. Lagally X-ray diffraction analysis of strain relaxation in free standing and buried GaAs/GalnAs/GaAs SQW lateral structures N. Darowski, U. Pietsch, K.-H. Wang, A. Forchel, Q. Shen, S. Kycia Dislocation half loop formation in GaSb/(001)GaAs islands and steps role: a Monte Carlo simulation J.D. Torre, M.D. Rouhani, G. Landa, A.M. Rocher, R. Malek, D. Esteve Early stages of growth and nanostructure of Pb(Zr,Ti)O; thin films observed by atomic force microscopy F. Craciun., P. Verardi, M. Dinescu, F. Dinelli, O. Kolosov Dynamical properties of trions and excitons in modulation doped CdTe/CdMgZnTe quantum wells D. Brinkmann, J. Kudrna, E. Vanagas, P. Gilliot, R. Levy, A. Arnoult, J. Cibert, S. Tatarenko Structural studies of epitaxial PbTiO; films by optical second harmonic generation E.D. Mishina, N.E. Sherstyuk, T.V. Misyuraev, A.S. Sigov, A.M. Grishin, Th. Rasing, O.A. Aktsipetroy Vill Contents Spectroscopic study of nanocrystalline TiO2 thin films grown by atomic layer deposition PAS eeIMABRTAT®. 9, PACES OO TURIN SL OEREIOS S325 ous Ge, ae Si SCRA Tee Iw ay 1 a ans tis Rane ie aay a oe Vertical MOS transistor The vertical heterojunction MOSFET* K. De Meyer, M. Caymax, N. Collaert, R. Looa, P. Verheyen Selectively grown vertical Si MOS transistor with reduced overlap capacitances D. Klaes, J. Moers, A. Ténnesmann, S. Wickenhauser, L. Vescan, M. Marso, T. Grabolla, M. Grimm, H. Liith Optimization of the channel doping profile of vertical sub-100 nm MOSFETs F. Kaesen, C. Fink, K.G. Anil, W. Hansch, T. Doll, T. Grabolla, H. Schreiber, I. Eisele Comparison of lateral and vertical Si-MOSFETS with ultra short channels D. Behammer, M. Zeuner, T. Hackbarth, J. Herzog, M. Schafer, T. Grabolla New virtual substrate concept for vertical MOS transistors E. Kasper, K. Lyutovich, M. Bauer, M. Oehme Optical and electrical characterization of SiGe layers for vertical sub-100 nm MOS transistors X. Zhang, P. Unelind, M. Kleverman, J. Olajos Analysis (poster session) Determination of light amplification processes in MOCVD grown ZnCdSe GRINSCH structures I. Mikulskas, D. Brinkmann, K. Luterova, R. Tomasiunas, B. Honerlage, J.V. Vaitkus, R.L. Aulomhard, T. Cloitre . . . Formation of zero-dimensional hole states in Ge/Si heterostructures probed with capacitance spectroscopy A.I. Yakimov, A.V. Dvurechenskii, A.I. Nikiforov, O.P. Pchelyakov Hole mobilities in pseudomorphic Si,_,-,Ge,C, alloy layers R. Duschl, H. Seeberger, K. Eber Thin tantalum pentoxide films deposited by photo-induced CVD J-Y. Zhang, B. Lim, I.W. Boyd Tunnelling currents in very narrow p —n’ junctions G. Reitemann, E. Kasper, H. Kibbel, H. Jorke Optical on wafer measurement of Ge content of virtual SiGe-substrates M. Oehme, M. Bauer Oscillatoric bias dependence of DC-electric field induced second harmonic generation from Si—SiO, multiple quantum wells V.V. Savkin, A.A. Fedyanin, F.A. Pudonin, A.N. Rubtsov, O.A. Aktsipetroy The determination of e,4 in (111)B-grown (In,Ga)As/GaAs strained layers P. Ballet, P. Disseix, J. Leymarie, A. Vasson, A.-M. Vasson, R. Grey Photoluminescence studies of As—P exchange in GaAs/GalnP, quantum wells grown by chemical beam epitaxy A. Aurand, J. Leymarie, A. Vasson, A.M. Vasson, M. Mesrine, C. Deparis, M. Leroux Characterization of inhomogeneous films by multiple-angle ellipsometry S. Colard, M. Mihailovic Magnetoluminescence measurements of two-dimensional hole gas M. Ciorga, L. Bryja, J. Misiewicz, O.P. Hansen Optical pumping in strained In,Ga,_,As/GaAs quantum wells F. Hassen, H. Sghaier, H. Maaref, R. Murray RF-sputtering deposition of Al/Al,O; multilayers L. Paven-Thivet, C. Malibert. Ph. Houdy, P.A. Albouy Optical studies of carrier transport phenomena in CdSe/ZnSe fractional monolayer superlattices l.V. Shubina, A.A. Toropov, S.V. Sorokin, S.V. Ivanov, P.S. Kop’ev, G.R. Pozina, J.P. Bergman, B. Monemar Raman and photoreflectance studies of electronic band bending at ZnSe/GaAs interfaces O. Pages, H. Erguig, V. Wagner, A. Zaoui, J.P. Laurenti, J. Gueurts, H. Aourag, R.L. Aulombard, M. Certier TEM and AFM study of perovskite conductive LaNiO; films prepared by metalorganic decomposition s ae Boaa s ae Pan. rk: PRaEr’S