ebook img

Thin Solid Films 1996: Vol 287 Table of Contents PDF

3 Pages·1996·0.73 MB·English
by  
Save to my drive
Quick download
Download
Most books are stored in the elastic cloud where traffic is expensive. For this reason, we have a limit on daily download.

Preview Thin Solid Films 1996: Vol 287 Table of Contents

ELSEVIER Volume 287, Numbers 1-2, 30 October 1996 Synthesis and Characterization Structural characterization of SiC filas prepared by dynamic ion mixing M. Zaytouni, J.P. Riviere, M.F. Denanot, J. Allain (Poitiers, France) Microstructure and physical properties of iron carbide films formed by plasma enhanced chemical vapor deposition H. Siriwardane, O.A. Pringle, J.W. Newkirk, W.J. James (Rolla, MO, USA) The tribological characteristics of titanium carbonitride coatings prepared by cathodic-arc ion plating technique Y.Y. Guu, J.F. Lin (Tainan, Taiwan, ROC), C.-F. Ai (Lung-Tan, Taiwan, ROC) Composition and structure of reactively sputter-deposited molybdenum—carbon films. ................0.cccceceeceeeeceeeeeeeeeeeereeeeeeeeeees S. Kacim (Marrakech, Morocco), L. Binst, F. Reniers, F. Bouillon (Bruxelles, Belgium) Preparation of YBa,Cu,O, superconducting thin films via combustion chemical vapor deposition G.W. Book, W.B. Carter, T.A. Polley (Atlanta, GA, USA), K.J. Kozaczek (Oak Ridge, TN, USA) Microstructure and phase characterization of diamond-like amorphous hydrogenated carbon films using STM/STS I. Rusman, L. Klibanov, L. Burstein, Yu. Rosenberg, V. Weinstein, E. Ben-Jacob, N. Croitoru, A. Seidman (Ramat-Aviv, Israel ) Scanning probe microscopy and tunnelling measurements of polycrystalline tin oxide films T.K.S. Wong, W.K. Man (Hong Kong, Hong Kong) Epitaxial growth of InSb films by r.f. magnetron sputtering T. Miyazaki, M. Kunugi, Y. Kitamura, S. Adachi ( Kiryu-shi, Gunma, Japan) Effect of target temperature on the reactive d.c.-sputtering of silicon and niobium oxides R.Y. Chau, W.-S. Ho, J.C. Wolfe, D.L. Licon (Houston, TX, USA) Properties of molecular organo-silicate composites submitted to ion irradiations J.C. Pivin (Orsay Campus, France), G. Brusatin (Padova, Italy), G. Zalczer (Gif sur Yvette, France) Characterization of RuO, thin films deposited on Si by metal-organic chemical vapor deposition P.C. Liao, S.Y. Mar, W.S. Ho, Y.S. Huang (Taipei, Taiwan), K.K. Tiong (Keelung, Taiwan) Mechanical characteristics of colored film on stainless steel by the current pulse method C.J. Lin (Yun Lin, Taiwan), J.G. Duh (Hsinchu, Taiwan) lon-assisted low-temperature ( < 150 °C) epitaxial growth of TiN on Cu by reactive magnetron sputter deposition H. Ljungcrantz, S. Benhenda, G. Hakansson, I. Ivanov, L. Hultman, J.E. Greene, J.-E. Sundgren (Linképing, Sweden) Surface diffusion of Fe and island growth of FeSi, on Si( 111) surfaces A. Wohllebe, B. Hollander, S. Mesters, C. Dieker, G. Crecelius, W. Michelsen, S. Mant! (Jiilich, Germany) Effect of oxygen pressure on the orientation, lattice parameters, and surface morphology of laser ablated BaTiO, thin films J. Zhang, D. Cui, Y. Zhou, L. Li, Z. Chen (Beijing, People’s Republic of China), M. Szabadi, P. Hess (Heidelberg, Germany ) Yttria-stabilized zirconia thin films grown by reactive r.f. magnetron sputtering H. Tomaszewski ( Warsaw, Poland), J. Haemers, J. Denul, N.D. Roo, R.D. Gryse (Gent, Belgium) Characterization of Pb,Mn, _ .S thin films prepared by flash evaporation technique P.K. Swain, H.K. Sehgal (New Delhi, India) Characterization of TiN films prepared by a conventional magnetron sputtering system: influence of nitrogen flow percentage and tectricel : M. Kawamura, Y. Abe, H. Yanagisawa, K. Sasaki ( Kitami, Japan) Elsevier Science S.A. vi Contents Effects of process parameters on titanium dioxide thin film deposited using ECR MOCVD J.S. Lee, H.W. Song, WJ. Lee, B.G. Yu, K. No (Taejon, South Korea) Influence of the power and pressure on the growth rate and refractive index of a-C:H thin films deposited by r.f. plasma-enhanced A.A. Benmassaoud (Rabat, Morocco), R.W. Paynter ( Varennes, Que., Canada) Photosensitive ZnCdS nanoparticles in a CdS matrix formed by high temperature sintering of ZnS and CdCl, in argon P.J. Sebastian, J. Narvaez (Temixco, Morelos, Mexico) Thermochromic VO, thin films studied by photoelectron spectroscopy T. Christmann, B. Felde, W. Niessner, D. Schalch, A. Scharmann (Giessen, Germany ) Electrical and microstructural characterization of lead titanate thin films deposited by metal-organic chemical vapor deposition onto platinum and magnesium oxide M. Vellaikal, A.I. Kingon (Raleigh, NC, USA) XPS study of NbN and (NbTi)N superconducting coatings G. Jouve, C. Séverac (Orsay, France), S. Cantacuzéne (Gif sur Yvette, France) Characterizations of titanium oxide films prepared by radio frequency magnetron sputtering N. Martin, C. Rousselot, C. Savall, F. Palmino (Montbéliard, France) Electrolytic oxygen evolution on Ni-P-Sc,O, composite layers J. Niedbata, A. Budniok, J. Suré6wka, D. Gierlotka ( Katowice, Poland) Plasma polymerization of tetraethoxysilane on aluminum granules for corrosion protection Y. Iriyama (Kofu, Japan), T. Ihara, M. Kiboku ( Higashi-Hiroshima, Japan) The effect of electric field on the formation of hydroxyapatite coatings A.J.S. Peaker, J.T. Czernuszka (Oxford, UK) Surfaces, Interfaces and Colloidal Behaviour Changes in surface composition of GaN by impurity doping T. Mori, T. Ohwaki, Y. Taga, N. Shibata, M. Koike, K. Manabe ( Aichi, Japan) Metallurgical, Protective and Hard Layers High temperature oxidation behaviour of (Ti, _ ,Cr,)N coatings Y. Otani, S. Hofmann ( Stuttgart, Germany) Microstructure of BN:C films deposited on Si substrates by reactive sputtering from a B,C target M.P. Johansson, L. Hultman (Linképing, Sweden), S. Daaud, K. Bewilogua, H. Liithje, A. Schiitze, S. Kouptsidis (Braun- schweig, Germany), G.S.A. M Theunissen (Eindhoven, Netherlands) Arc evaporated Ti-N films with reduced macroparticle contamination J. Kourtev, R. Pascova (Sofia, Bulgaria), E. Wei8mantel (Chemnitz PSF, Germany ) Mechanics and Nanomechanics of Thin Layers Elastic modulus of ToDyFe films—a comparison of nanoindentation and bending measurements J. Mencfk, E. Quandt, D. Munz ( Karlsruhe, Germany ) Micromachined silicon cantilever beams for thin-film stress measurement G.F. Cardinale, D.G. Howitt (Davis, CA, USA), W.M. Clift, K.F. McCarty, D.L. Medlin, P.B. Mirkarimi, N.R. Moody (Liv- ermore, CA, USA) Electronics, Optics and Opto-electronics Organically modified sol-gel materials for second-order nonlinear optics D.H. Choi (Kyungki-Do, South Korea), S.J. Lim, W.S. Jahng, N. Kim (Seoul, South Korea) Langmuir-Blodgett, Biological and Related Films Investigation of ultra thin Ca/Cd—arachidate films by Grazing Incidence Diffraction (GID) with a conventional X-ray tube and a J. Claudius, Th. Gerber (Rostock, Germany), J. Weigelt (Hamburg, Germany), M. Kinzler (Heidelberg, Germany ) Structure—fluorescence properties of some naphthoylene-benzimidazole-based Langmuir—Blodgett films V.N. Bliznyuk (Kiev, Ukraine), D. Neher (Mainz, Germany), 1.1. Ponomarev (Moscow, Russian Federation), V.V. Tsukruk (Kalamazoo MI, USA) Contents Structural study of Langmuir—Blodgett films built from Langmuir mono- and bilayers of a copper phthalocyanine derivative P. Valerio, P.-A. Albouy (Orsay, France) Thin Film Devices, Sensors and Actuators Theoretical study on the fabrication of a microlens using the excimer laser chemical vapor deposition technique Q. Wang, Y. Zhang, D. Gao (Changchun, People’s Republic of China) Effect of hydroxy! substitution in squaraine dyes on their aggregation in Langmuir—Blodgett films J. Li, B. Li, X. Li, J. Tang, L. Jiang (Beijing, People’s Republic of China) Fabrication and characterization of MOS devices on 3C-SiC films grown by reactive magnetron sputtering on Si( 111) substrates Q. Wahab, R. Turan, L. Hultman, M. Willander, J.-E. Sundgren (Link6éping, Sweden) Microstructural effect on NO, sensitivity of WO, thin film gas sensors Part 1. Thin film devices, sensors and actuators H.-T. Sun, C. Cantalini, L. Lozzi, M. Passacantando, S. Santucci, M. Pelino (City, L’ Aquila, Italy) Condensed Matter Film Behaviour Cu films deposited by a partially ionized beam (PIB) S.-K. Koh, W.-K. Choi, K.-H. Kim, H.-J. Jung (Seoul, South Korea) Influence of arsenic in silicon on thermal oxidation rate S.S. Choi (Chung-Nam, South Korea), M.J. Park (Seoul, South Korea), W.K. Chu (Houston, TX, USA) Growth and branching of wrinkles in deposited films G. Carter (Salford, UK), Yu. Martynenko, P. Moscovkin (Moscow, Russia) Electrical conductivity of in situ ‘‘hydrogen-reduced”’ and structural properties of zinc oxide thin films deposited in different ambients by pulsed excimer laser ablation H. Kordi Ardakani (Theran, Iran) Some characteristics of silicon-doped Ing 52Alp 4gAs grown lattice-matched on InP substrates by molecular beam epitaxy S.F. Yoon, Y.B. Miao, K. Radhakrishnan (Singapore, Singapore) Electromagnetic field resonance in thin amorphous films: a tool for non-destructive localization of thin marker layers by use of a S. Di Fonzo, W. Jark (Trieste, Italy), S. Lagomarsino, A. Cedola (Roma, Italy), B.R. Miiller (Trieste, Italy), J.B. Pelka (W ar- saw, Poland) Interdiffusion in compositionally modulated amorphous Nb/Si multilayers M. Zhang, W. Yu, W.H. Wang, W.K. Wang (Beijing, People’s Republic of China) Author Index of Volume 287 Subject Index of Volume 287 The publisher encourages the submission of articles in electronic form thus saving time and avoiding rekeying errors. A leaflet describing our requirements is available from the publisher upon request.

See more

The list of books you might like

Most books are stored in the elastic cloud where traffic is expensive. For this reason, we have a limit on daily download.