VIER Volume 276, Numbers 1-2, 15 April 1996 Contents Invited Papers X-ray diffraction studies of porous silicon D. Bellet, G. Dolino ( Saint-Martin d’ Héres, France ) The dielectric function of porous silicon — how to obtain it and how to use it W. Theif (A achen, Germany ) Light-emitting and photoconductive diodes fabricated with conjugated polymers J.J.M. Halls, D.R. Baigent, F. Cacialli, N.C. Greenham, R.H. Friend, S.C. Moratti, A.B. Holmes (Cambridge, UK) Preparation of Porous Silicon and Electrochemistry Illumination-assisted formation of porous silicon M. Thonissen, M.G. Berger, R. Arens-Fischer, O. Gliick, M. Kriiger, H. Liith (Jiilich, Germany ) Photo- and potential-controlled nanoporous silicon formation on n-Si(111): an in-situ FTIR Investigation J. Rappich, H.J. Lewerenz (Berlin, Germany ) High aspect ratio silicon pillars fabricated by electrochemical etching and oxidation of macroporous silicon H.W. Lau, G.J. Parker, R. Greef (Southampton, UK) Thermal nitridation of p-type porous silicon in ammonia V. Morazzani, J.L. Cantin, C. Ortega, B. Pajot, R. Rahbi, M. Rosenbauer, H.J. Von Bardeleben (Paris, France), E. Vazsonyi (Budapest, Hungary) Investigation of different oxidation processes for porous silicon studied by spectroscopic ellipsometry U. Frotscher, U. Rossow, M. Ebert, C. Pietryga, W. Richter (Berlin, Germany), M.G. Berger, R. Arens-Fischer, H. Miinder (Jiilich, Germany ) Electrical contact to porous silicon by electrodeposition of iron F. Ronkel, J.W. Schultze (Diisseldorf, Germany), R. Arens-Fischer (Jiilich, Germany ) Mechanisms of Light Emission Mechanism of visible photoluminescence from oxidized silicon and germanium nanocrystallites Y. Kanemitsu (Ibaraki, Japan) Luminescence and Raman scattering from porous silicon under high hydrostatic pressure: a test for the present models of luminescence J. Zeman, M. Zigone, G.L.J.A. Rikken, G. Martinez (Grenoble, France) Investigation of the non-radiative processes in porous silicon G. Amato, L. Boarino, N. Brunetto, A.M. Rossi (Turin, Italy), A. Parisini (Bologna, Italy) Transient laser-induced grating spectroscopy in porous silicon R. Tomasiunas (Strasbourg, France), I. Pelant, A. Hospodkova, V. Kohlova, P. Knapek (Praha, Czech Republic), R. Lévy, J. Moniatte, J.B. Grun, B. Hénerlage (Strasbourg, France) Photoluminescence dynamics of porous silicon: picoseconds to milliseconds J. Kudrna, F. Trojanek, I. Pelant (Prague, Czech Republic), S. Bana (RoZnov pod Radhostém, Czech Republic), V. Kohiova, P. Maly (Prague, Czech Republic) Elsevier Science S.A. Contents Characterisation of Porous Silicon Properties An in-situ method of monitoring the surface area of porous silicon L.M. Peter, D.J. Riley, R.I. Wielgosz (Bath, UK) Bimodal size distribution in p~ porous silicon studied by small angle X-ray scattering M. Binder, T. Edelmann, T.H. Metzger (Miinchen, Germany), G. Mauckner (Ulm, Germany), G. Goerigk (Jiilich, Germany), J. Peis] (Miinchen, Germany ) X-ray diffraction investigation of porous silicon superlattices D. Buttard, D. Bellet (Saint-Martin d’ Héres, France), T. Baumbach (Grenoble, France) Excitation wavelength dependence of Raman and photoluminescence spectra of porous Si membranes S. Guha ( Washington, DC, USA), P. Steiner, F. Kozlowski, W. Lang (Munich, Germany ) Anodic oxidation of p- and p*-type porous silicon: surface structural transformations and oxide formation J.L. Cantin,M . Schoisswohl, A. Grosman,S . Lebib,C . Ortega, H.J. Von Bardeleben (Paris, France) ,E. Vazsonyi,G. Jalsovszky (Budapest, Hungary), J. Erostyak (Pécs, Hungary ) Light scattering from porous silicon G. Lérondel, R. Romestain, F. Madéore, F. Muller (St. Martin d’ Héres, France) Optical non-linearity and hysteresis in porous silicon P. Maly, J. Kudrna, F. Trojanek, A. Hospodkova (Prague, Czech Republic) Other Light-Emitting Structures Photoluminescence studies of light emission from silicon implanted and annealed SiO, layers P. Mutti, G. Ghislotti (Milano, Italy), L. Meda (Novara, Italy), E. Grilli, M. Guzzi, L. Zanghieri, R. Cubeddu, A. Pifferi, P. Taroni, A. Torricelli (Milano, Italy) Defects and visible photoluminescence in porous Si, _ ,Ge, M. Schoisswohl, J.L. Cantin, M. Chamarro, H.J. Von Bardeleben (Paris, France), T. Morgenstern, E. Bugiel, W. Kissinger (Frankfurt(Oder) ,G ermany), R.C. Andreu (Zaragoza, Spain) On the structural origin of the photoluminescence in silicon powder produced in PECVD processes J. Costa, P. Roura, A. Canillas, E. Pascual, J.R. Morante, E. Bertran (Barcelona, Spain) Continuously tunable photoluminescence from Si* -implanted and thermally annealed SiO, films T. Fischer, V. Petrova-Koch (Garching, Germany), K. Shcheglov (Pasadena, CA, USA), M.S. Brandt, F. Koch (Garching, Germany ) Visible photoluminescence from silicon nanocrystals formed in silicon dioxide by ion implantation and thermal processing T. Shimizu-Iwayama, Y. Terao, A. Kamiya, M. Takeda (Aichi, Japan), S. Nakao, K. Saitoh (Nagoya, Japan) Correlation between microstructure and photoluminescence of nanocrystalline silicon powder prepared by laser-induced CVD S. Tamir, S. Berger ( Haifa, Israel) Porous Silicon Luminescence On the origin of blue luminescence arising from atmospheric impregnation of oxidized porous silicon L.T. Canham, A. Loni, P.D.J. Calcott, A.J. Simons, C. Reeves, M.R. Houlton, J.P. Newey, K.J. Nash, T.I. Cox (Great Malvern, UK) Excitation of the porous silicon photoluminescence by a multiphoton vibronic process 116 J. Diener, M. Ben-Chorin, D.I. Kovalev, S.D. Ganichev, F. Koch (Garching, Germany) Polarization of porous silicon photoluminescence: alignment and built-in anisotropy 120 D. Kovalev, M. Ben Chorin, J. Diener, F. Koch (Garching, Germany), A. Kux (Saint Martin d’Heres, France), Al.L. Efros, M. Rosen ( Washington, DC, USA), N.A. Gippius, S.G. Tikhodeev (Moscow, Russia) Mechanisms of luminescence tuning and quenching in porous silicon L.M. Peter, D.J. Riley, R.I. Wielgosz, P.A. Snow, R.V. Penty, I.H. White (Bath, UK), E.A. Meulenkamp (Eindhoven, Netherlands ) Investigation of the quenching mechanisms of the porous silicon luminescence M.A. Hory, A. Bsiesy, R. Hérino, M. Ligeon, F. Muller, J.C. Vial (Grenoble, France) Temperature-dependent photoluminescence in porous amorphous silicon E. Bustarret, E. Sauvain (Grenoble, France), M. Ligeon (St. Martin d’Héres, France), M. Rosenbauer (Stuttgart, Germany ) Contents Porous Silicon Applications A novel capacitor technology based on porous silicon V. Lehmann, W. Honlein, H. Reisinger, A. Spitzer, H. Wendt, J. Willer (Miinchen, Germany ) Porous silicon multilayer optical waveguides A. Loni, L.T. Canham (Malvern, UK), M.G. Berger, R. Arens-Fischer, H. Munder, H. Luth (Julich, Germany), H.F. Arrand, T.M. Benson (Nottingham, UK) Characterization of porous silicon-on-insulator films prepared by anodic oxidation C.H. Lee, C.C. Yeh, H.L. Hwang, K.Y.J. Hsu (Hsinchu, Taiwan) Two-dimensional infrared photonic crystal based on macroporous silicon U. Griining, V. Lehmann (Miinchen, Germany ) Electroluminescence of Porous Silicon A porous silicon light-emitting diode with a high quantum efficiency during pulsed operation N. Lalic, J. Linnros ( Kista-Stockholm, Sweden) Influence of different metallic contacts on porous silicon electroluminescence P. Steiner, A. Wiedenhofer, F. Kozlowski, W. Lang (Munich, Germany) Time-resolved electroluminescence of porous silicon F. Kozlowski, C. Sailer, P. Steiner, B. Knoll, W. Lang (Miinchen, Germany ) Visible light from aluminum-porous silicon Schottky junctions S. Lazarouk, P. Jaguiro, S. Katsouba (Minsk, Belarus), S. La Monica, G. Maiello, G. Masini, A. Ferrari (Rome, Italy) Strong 1.54 jm luminescence from erbium-doped porous silicon A. Dorofeev, E. Bachilo, V. Bondarenko, N. Gaponenko, N. Kazuchits, A. Leshok, G. Troyanova, N. Vorozov, V. Borisenko (Minsk, Belarus), H. Gnaser, W. Bock, P. Becker, H. Oechsner ( Kaiserslautern, Germany ) Electrical and Transport Properties of Porous Silicon Conduction in porous silicon contacted by a liquid phase B. Gelloz, A. Bsiesy, F. Gaspard, F. Muller (Saint Martin d’ Héres, France) Electrical characterization of metal Schottky contacts on luminescent porous silicon A. Diligenti, A. Nannini, G. Pennelli, V. Pellegrini, F. Fuso (Pisa, Italy), M. Allegrini ( Sant’ Agata, Italy) Electronic properties of thin Au/nanoporous-Si/n-Si structures Th. Dittrich, K. Kliefoth, I. Sieber, J. Rappich, S. Rauscher (Berlin, Germany), V.Yu. Timoshenko (Moscow, Russia) Charge transport in porous silicon: considerations for achievement of efficient electroluminescence J. Koétka, J. Oswald, A. Fejfar, R. Sedlaéfk, V. Zelezny, H. The-Ha, K. Luterov4, I. Pelant (Praha, Czech Republic) Investigation of photoelectrical properties and carrier transport in porous silicon structures by the transient grating technique K. JaraSidinas, V. Mizeikis, M. SidZius, L. Subatius, K. Grigoras, I. Simkiene (Vilnius, Lithuania) Residual electrolyte as a factor influencing the electrical properties of porous silicon V.P. Parkhutik (V alencia, Spain) Porous Silicon: Material, Technology and Devices (Poster Session) Preparation of thin nanoporous silicon layers on n- and p-Si Th. Dittrich, I. Sieber, S. Rauscher, J. Rappich (Berlin, Germany ) Drying of porous silicon: a Raman, electron microscopy, and photoluminescence study G. Amato, V. Bullara, N. Brunetto, L. Boarino (Turin, Italy) Effect of light intensity on photoluminescence properties of n-type porous silicon A. Abouliatim, P. Joubert, P. Guyader (Lannion, France) Influence of anodization time and current density on the photoluminescence of porous N-Si P. Martin, J.F. Fernandez, F. Cuevas, M. Alguer6é, C. Sanchez (Madrid, Spain) Influence of photoluminescence and trapping on the photovoltage at the por-Si/p-Si structure V.Yu. Timoshenko, P.K. Kashkarov, A.B. Matveeva, E.A. Konstantinova (Moscow, Russia), H. Flietner, Th. Dittrich (Berlin, Germany) About the origin and the mechanisms involved in the cracking of highly porous silicon layers under capillary stresses O. Belmont, C. Faivre, D. Bellet, Y. Brechet (Saint-Martin d’ Héres, France) Vili Contents Characterization of different porous silicon structures by spectroscopic ellipsometry M. Fried, T. Lohner, O. Polgar, P. Petrik, E. Vazsonyi, I. Barsony (Budapest, Hungary), J.P. Piel, J.L. Stehle (Bois-Colombes, France ) Enhanced light absorption in anodically etched silicon wafers K. Grigoras, A. Krotkus, V. Patéebutas, J. Kavaliauskas, I. Simkiené (Vilnius, Lithuania) The influence of the doping level on the optical properties of porous silicon S. Hilbrich, W. Thei8 (Aachen, Germany), R. Arens-Fischer, O. Gliick, M.G. Berger (Jiilich, Germany ) Polarization memory induced by polarized light-assisted anodization of n-type Si G. Polisski (Garching, Germany), A.V. Andrianov (St. Petersburg, Russia), D. Kovalev, F. Koch (Garching, Germany ) Structure and non-uniform strain analysis on p-type porous silicon by X-ray reflectometry and X-ray diffraction J.M. Lépez-Villegas, M. Navarro (Barcelona, Spain), D. Papadimitriou (Athens, Greece), J. Bassas, J. Samitier (Barcelona, Spain) Observation of (100) surfaces in p-type porous silicon by electron paramagnetic resonance J.L. Cantin,M . Schoisswohl, H.J. Von Bardeleben (Paris, France), N. Hadj Zoubir,M . Vergnat (V andoeuvrleé s Nancy, France) Auger lineshape analysis of porous silicon: experiment and theory L. Dorigoni, L. Pavesi, O. Bisi, L. Calliari, M. Anderle (Povo, Italy), S. Ossicini (Modena, Italy) Photoluminescence and chemical bonding in porous silicon layers—dependence on the P concentration in the Si substrate D. Dimova-Malinovska, M. Kamenova, M. Sendova-Vassileva, Ts. Marinova, V. Krastev (Sofia, Bulgaria) Metallisation of porous silicon by chemical vapour infiltration and deposition B.J. Aylett, I.S. Harding (London, UK), L.G. Earwaker, K. Forcey, T. Giaddui (Birmingham, UK) Formation of porous silicon on patterned substrates M. Kriiger, R. Arens-Fischer, M. Thénissen, H. Miinder, M.G. Berger, H. Liith (Jiilich, Germany), S. Hilbrich, W. Theiss ( Aachen, Germany ) The luminescence transition in porous silicon: the nature of the electronic states L. Dorigoni, O. Bisi (Povo, Italy), F. Bernardini, S. Ossicini (Modena, Italy) Adsorption-induced modification of spin and recombination centers in porous silicon E.A. Konstantinova (Moscow, Russia), Th. Dittrich (Berlin, Germany), V.Yu. Timoshenko, P.K. Kashkarov (Moscow, Russia) Dependence of PS photoluminescence on relative humidity J. Oswald, J.J. MareS, J. KriStofik, R. Sedlacik (Praha, Czech Republic) Red, green and blue luminescence in porous silicon—a study of excitation spectra A. Kux (Saint Martin d’ Héres, France), M. Ben Chorin (Garching, Germany ) The dielectric function of some low-dimensional Si and Ge structures H.M. Polatoglou, V. Vlachoudis (Thessaloniki, Greece) Photoluminescence of laser-deposited porous silicon and its correlation with density of electronic states determined by scanning tunnelling microscopy 279 R. Laiho, A. Pavlov (Turku, Finland) Stability of electroluminescence and photoluminescence of porous silicon 284 F. Kozlowski, A. Wiedenhofer, W. Wagenseil, P. Steiner, W. Lang (Miinchen, Germany ) Stable and efficient cathodo- and photoluminescence from ultrathin porous silicon layers 287 V.Yu. Timoshenko, A.R. Gareeva, P.K. Kashkarov, V.I. Petrov (Moscow, Russia), I. Sieber, Th. Dittrich (Berlin, Germany ) Recombination with larger than bandgap energy at centres on the surface of silicon microstructures 290 P. Deak, Z. Hajnal, J. Miré (Budapest, Hungary) Silicon needles in porous silicon 293 P. Lavallard (Paris, France), R.A. Suris (St. Petersburg, Russia) Electroluminescence from aluminum-—porous silicon reverse-biased Schottky diodes formed on the base of highly doped n-type polysilicon S. Lazarouk, V. Bondarenko (Minsk, Belarus), S. La Monica, G. Maiello, G. Masini (Rome, Italy), P. Pershukevich ( Minsk, Belarus), A. Ferrari (Rome, Italy) Electroluminescence from porous silicon using a conducting polyaniline contact D.P. Halliday, E.R. Holland, J.M. Eggleston, P.N. Adams, S.E. Cox, A.P. Monkman (Durham, UK) Photo-assisted evolution of the photoluminescence spectrum of porous silicon immersed in hydrofluoric acid M. Davison, U.M. Noor, L. Berlouis, D. Uttamchandani, K.P. O’ Donnell (Glasgow, UK) Contents The influence of preparation conditions on the photoluminescence spectra of light-emitting Si prepared by laser pulse irradiation of K.M.A. El-Kader, O. Borusik, Z. Chvoj, I. Ulrych, J. Oswald, I. Pelant, J. Stuchlfk, V. Chab, J. Kocka (Prague, Czech Repub- lic), T.E. Dyer, J.M. Marshall (Swansea, UK) Characterization of silicon-implanted SiO, layers using positron annihilation spectroscopy G. Ghislotti, B. Nielsen, P. Asoka-Kumar, K.G. Lynn, C. Szeles (Upton, NY, USA), C.E. Bottani (Milano, Italy), S. Bertoni, G.F. Cerofolini, L. Meda (Novara, Italy) Microscopic characterization of microcrystalline silicon thin films I. Sieber, I. Urban, I. Dérfel (Berlin, Germany), S. Koynov, R. Schwarz (Garching, Germany), M. Schmidt (Berlin, Germany ) Visible luminescence from C-containing silicon oxide films M. Sendova-Vassileva, N. Tzenov, D. Dimova-Malinovska, Ts. Marinova, V. Krastev ( Sofia, Bulgaria) Author Index of Volume 276 Subject Index of Volume 276 The publisher encourages the submission of articles in electronic form thus saving time and avoiding rekeying errors. A leaflet describing our requirements is available from the publisher upon request.