THIN SOLID FILMS VOLUME 233, NUMBERS 1-2, OCTOBER 12, 1993 Contents a ee eG ond dhe Eid oh oh Riese bk Wad ha ea : , cit RM UE Ba i ES CT eae SRY Ve 665 6x8 Cha a TESEERESERSA TER EEER EMA SRLATN EET L ETE OTE 00 od EEA Reflectance Anisotropy New developments in spectroellipsometry: the challenge of surfaces ......0c. ce.ce e.ee. ce.nce. ee.e ee0nee.une ns l D. E. Aspnes (Raleigh, NC, USA) Reflectance anisotropy spectroscopy: a new method for semiconductor surface chemistry investigation............... 9 V. L. Berkovits (Saint Petersburg, Russian Federation) and D. Paget (Palaiseau, France) Cr Ge ae re IIH AN BH AT as Fe, BUPA Be Tae, l4 H. Wormeester, D. J. Wentink, P. L. de Boeij and A. van Silfhout (Enschede, Netherlands) Hydrogen-terminated Si(100) surfaces investigated by reflectance anisotropy spectroscopy ..............00eceeeeeee 19 A. B. Muller, F. Reinhardt, U. Resch, W. Richter, K. C. Rose and U. Rossow (Berlin, Germany) Cees aemnntrents of AG SRG CONOR 66.5 6 i,6 8c i ns cas scene LTRS AR Se ie 24 T. Borensztein (Paris, France), A. Tadjeddine (Meudon, France), W. L. Mochan, J. Tarriba (Morelos, Mexico) and R. G. Barrera (Mexico, Mexico) Full microscopic treatment of the optical response of the Si(100) 2 x 1 surface ........ 0... eeee e eee 28 C. M. J. Wijers, G. P. M. Poppe, P. L. de Boeij, H. G. Bekker and D. J. Wentink (Enschede, Netherlands) Roughness— Electrochemistry Elipsometry in electrochemistry: a spectrum of applications. 6.2.66 i cee eee le eel bie ak obs DULL 32 R. Greef (Southampton, UK) The surface roughness and optical properties of high quality Si epitaxial layers...0..0.... .ce.ce. c.ec.e e.ee. e ee 40 V. Nayar, C. Pickering, A. J. Pidduck, R. T. Carline, W. Y. Leong and D. J. Robbins (Malvern, UK) Ex situ variable angle spectroscopic ellipsometry studies of electron cyclotron resonance etching of Hg,_,Cd,Te..... 46 G. J. Orloff (Dallas, TX, USA), J. A. Woollam, P. He, W. A. McGahan (Lincoln, NE, USA), J. R. McNeill, R. D. Jacobson (Albuquerque, NM, USA) and B. Johs (Lincoln, NE, USA) Estimation of the quality of polished optical glass surfaces by spectral ellipsometry ...........0..0.. .ee .ee. e.en s 50 J. Hrdina (Praha, Czech Republic) Experimental roughness excitation of surface electromagnetic waves and their detection by ellipsometry.............. 53 M. Gauch and G. Quentel (Marseille, France) Characterization of different conversion coatings on aluminium with spectroscopic ellipsometry...................-. 58 J. De Laet, J. Vanhellemont, H. Terryn and J. Vereecken (Brussels, Belgium) Anodic oxidation of aluminium in sulphuric acid monitored by ex-situ and in-situ spectroscopic ellipsometry......... 63 R. K6tz, B. Schnyder and C. Barbero (Villigen, Switzerland) Spectroscopic ellipsometry of carbon electrodes during electrochemical activation ......0.00.. c .cec.e e.ee. eee. ee e 69 R. K6tz, C. Barbero, B. Schnyder and O. Haas ( Villigen, Switzerland) Ellipsometry of iron hydrous oxide layers formed by potentiodynamic techniques ..........0.0 c.ee. ce.c0e 0ee.e e ee 74 J. O. Zerbino, O. L. Bulhoes, S. Juanto, M. I. Miguez, J. R. Vilche and A. J. Arvia (La Plata, Argentina) Ellipsometry and electron diffraction study of anodically formed Pd oxide layers.....0..0 .e .ce.ce. e.ee. e.e0ns 77 A. E. Bolzan, J. O. Zerbino, E. Macchi and A. J. Arvia (La Plata, Argentina) Ellipsometric study of hydrous gold oxide layers and gold surfaces resulting from their electroreduction ............. 82 M. E. Vela, J. O. Zerbino and A. J. Arvia (La Plata, Argentina) Effect of anisotropy on microcilipsometry it the Ta/TiIOy gyttei. 5 ci i ele iva sae ees caw ewes tere eeneees 86 A. Michaelis and J. W. Schultze (Dusseldorf, Germany) Optical spectra of a conducting polymer (polymethyl-3-thiophene) at several stages of the electrodeposition process... 91 C. Tian, G. Jin, F. Chao, M. Costa (Meudon, France) and J. P. Roger (Paris, France) Elsevier Sequoia Semiconductors and Microelectronics Applications of spectroscopic ellipsometry to microelectronics .... 1.1... ccc cece ccc n ce ee eer eeneceseenes E. A. Irene (Chapel Hill, NC, USA) Modulated ellipsometry for characterization of multiple quantum wells and superlattices...................0000005. 112 J.-Th. Zettler (Berlin, Germany), H. Mikkelsen (Aachen, Germany), Th. Trepk (Berlin, Germany), K. Leo, H. Kurz (Aachen, Germany) and W. Richter (Berlin, Germany) Ion-implantation-caused special damage profiles determined by spectroscopic ellipsometry in crystalline and in relaxed RS Ter eT eee Tee ever ay err ere rer eT Tree rr ere Teer rer Sree eer 117 T. Lohner, M. Fried, J. Gyulai (Budapest, Hungary), K. Vedam, N. V. Nguyen (University Park, PA, USA), L. J. Hanekamp and A. van Silfhout (Enschede, Netherlands) Temperature dependence of the dielectric function and interband critical points of AlAs obtained on an MBE grown layer 122 M. Garriga, M. Kelly and K. Ploog (Stuttgart, Germany) In-situ dual-wavelength and ex-situ spectroscopic ellipsometry studies of strained SiGe epitaxial layers and multi-quantum ob o's 6S SERRE REEOEET TS OVE TRAE RESORTED eS CECE SE SEO e esC ENA EE CER ARES EEUREE NEE RRR 126 C. Pickering, R. T. Carline, D. J. Robbins, W. Y. Leong (Malvern, UK), D. E. Gray and R. Greef (Southampton, UK) Determination of porous silicon film parameters by polarized light reflectance measurements ...................005. 131 P. Basmaji, V. S. Bagnato, V. Grivickas, G. I. Surdutovich and R. Vitlina (Sao Carlos, Brazil) ScOUeey SUCGTVIMOTIOE Bi DIO-TUPIIOAVOE GEUIOOMGNCTONS «0... nice ce cea calenes ane sep ee meewine ene « 137 P. Etchegoin and M. Cardona (Stuttgart, Germany) EE ee ee eee Pere eee ee eee ee ee ee eee © ones ee 14] P. Etchegoin, J. Kircher and M. Cardona (Stuttgart, Germany) Spectroscopic ellipsometry: a useful tool to determine the refractive indices and interfaces of Ing 5,Aly4gAs and Ino 53Al, Gao 47_,, As on InP in the wavelength range from 280 to 1900 nm......c.ee .cc.c .ce.ce .cec.e c.ece. ee ns 145 H. W. Dinges, H. Burkhard, R. Losch, H. Nickel and W. Schlapp (Darmstadt, Germany) Determination of accurate critical-point energies, linewidths and line shapes from spectroscopic ellipsometry data..... 148 J. W. Garland, C. C. Kim, H. Abad and P. M. Raccah (Chicago, IL, USA) Si- and Ge-like features in the dielectric function of Si,,Ge,,, superlattices, ... 0... ccc ccc e sees wesc eee eenennees 153 J. C. Jans, R. W. J. Hollering, D. J. Gravesteijn and C. W. Fredriksz (Eindhoven, Netherlands) eS OGRE CE CURE Bh. OOO IN on iwi bea dane be we Wepie eld eda w wp nsiemme ove mes atehsens 158 M. Libezny, J. Poortmans, M. Caymax, A. Van Ammel (Leuven, Belgium), J. Kubéna, V. Holy (Brno, Czech Republic) and J. Vanhellemont (Leuven, Belgium) Dielectric function of GaAs/AIAs superlattices grown on GaAs substrates with different orientation................. 162 F. Lukes (Brno, Czech Republic) and K. Ploog (Berlin, Germany) Temperature dependence of the dielectric function of silicon using in situ spectroscopic ellipsometry................. 166 G. Vuye, S. Fisson, V. Nguyen Van, Y. Wang, J. Rivory and F. Abelés (Paris, France) Non-destructive characterization of III—V alloy multilayer structures using spectroscopic ellipsometry ............... 171 C. Pickering, R. T. Carline (Malvern, UK), N. S. Garawal (Guildford, UK), J. L. Stehle, J. P. Piel (Bois-Colombes, France), R. Blunt (Cardiff, UK) and P. Kirby (Towcester, UK) Thin epitaxial films of wide-gap II-VI compounds studied by spectroscopic ellipsometry...................00000005 176 U. Rossow, T. Werninghaus, D. R. T. Zahn, W. Richter and K. Horn (Berlin, Germany) Ermpsometric characterisation Of InP-based GUantum WET) SEFUCTUTES «non. c ccs ce ccc ecm me epee eesnesen sense 180 U. Rossow, A. Krost, T. Werninghaus, K. Schatke, W. Richter, A. Hase, H. Kiinzel and H. Roehle ( Berlin, Germany) Temperature dependence of the dielectric function and the interband critical-point parameters of GaP............... 185 S. Zollner, M. Garriga, J. Kircher, J. Humlicék, M. Cardona (Stuttgart, Germany) and G. Neuhold (Erlangen, Germany) Detection and characterization of transient surface periodic structures formed during pulsed-laser annealing of semicon- eee SUENER OY Ge eT PR BIR? SAG R08. PPE. TRY BO. FAS. AAG OD CBU A 189 D. J. Brink and J. E. Smit (Pretoria, South Africa) Spectroscopic transmission ellipsometry studies of intersub-band transitions in n-GaAs/Al, ,Ga)7As quantum wells ... 194 K. B. Ozanyan and O. Hunderi (Trondheim, Norway) Non-destructive depth profiling of silicon ion implantation induced damage in silicon (100) substrates............... 199 S. Lynch, M. Murtagh, G. M. Crean, P. V. Kelly, M. O’Connor (Cork, Ireland) and C. Jeynes (Guildford, UK) Spectroscopic ellipsometry study of the relaxation state of amorphous silicon......00. c.c c.ec.e e.ee. e.ee. ee.ee.ee s R. Reitano, M. G. Grimaldi, P. Baeri (Catania, Italy), A. Borghesi (Modena, Italy) and A. Sassella (Pavia, Italy) An Giapeometric investigation of ion implanted silicon. .... 0... ccc cer eccnncncscascccvcbecccvecevecceees 207 G. Popescu and I. Boca (Bucharest, Romania) Optimization of the polycrystalline silicon-on-silicon dioxide characterization using spectroscopic ellipsometry ........ 210 L. M. Asinovsky (Flanders, NJ, USA) Characterization of silicon on insulator multilayers using ex situ spectroscopic ellipsometry and in situ monochromatic ee ee I os 5 a 5.60 sdb 5 ab A 6 bddSER HO ERED ESE V TETRA ETRE TOT LEE EERO EER OR TEE OTaTe 214 R. Greef, D. E. Gray, N. J. Dartnell, J. Zhu (Southampton, UK), S. Lynch and G. M. Crean (Cork, Ireland) Spectroellipsometry characterization of directly bonded silicon-on-insulator structures..2..0.0. ..00.cc.ee.eu.ee.eu.ee 218 M. E. El-Ghazzawi, T. Saitoh, N. Hori, A. Sakai and T. Oka (Tokyo, Japan) Study of thin films of transparent electronic materials by phase-modulated spectroellipsometry ..................... 223 J. Campmany, A. Canillas, J. L. Andujar, J. Costa and E. Bertran (Barcelona, Spain) Ellipsometric characterization of hydrogen-rich oxynitride films...0.0 .ccc. cec.e .cec.e .ee.e .cec.e n.eue. eea es 227 A. Borghesi (Modena, Italy), A. Sassella (Pavia, Italy) and S. Rojas (Agrate, Italy) Investigation of the system InSb—SiO, by spectroscopic multiangle ellipsometry.............ce. c.ec.e. .ee0e0 ee.e s 231 S. Russev, E. Valcheva and K. Germanova (Sofia, Bulgaria) Characterization of Si0,—GaAs interface structures using spectroscopic ellipsometry. ............c.ee. c.e e0e.e e0ee e 236 Y. Watanabe, T. Saitoh, M. Miyazaki and K. Suzuki (Tokyo, Japan) The influence of temperature and pressure on the structure of remote plasma enhanced chemically vapour deposited SiO, a a a i ag bw Sih shell A lk lene 5 Ah WE KK 8 X98 4-S OLR A OE ee Ca ak EO 240 B. Gruska and K. Wandel (Berlin, Germany) In Situ Characterization— Nucleation and Growth Real time spectroscopic ellipsometry for characterization of nucleation, growth, and optical functions of thin films... . R. W. Collins, I. An, H. V. Nguyen and Y. Lu (University Park, PA, USA) Electron cyclotron resonance etching of semiconductor structures studied by in-situ spectroscopic ellipsometry........ 253 S. Nafis, N. J. Ianno, P. G. Snyder, W. A. McGahan, B. Johs and J. A. Woollam (Lincoln, NE, USA) Ellipsometry study of the adhesion of dielectric thin films on polymer substrates......0.00. c.e.ce. e.e.e e.e.e 0ee e 256 S. Vallon, B. Drévillon (Palaiseau, France) and J. C. Rostaing (Les Loges en Josas, France) Study of CaF, growth on Si, a-SiO, by in situ spectroscopic ellipsometry .......... 0.0... cece eee cece eee nes 260 J. Rivory, S. Fisson, V. Nguyen Van, G. Vuye, Y. Wang, F. Abeles (Paris, France) and K.-Y. Zhang (Noisy le Grand, France) Spectroellipsometric study of the growth and phase transitions of a two-dimensional metal: Pb on Ge(111).......... 264 M. Abraham (Mainz, Germany) and G. LeLay (Marseille, France) in le Cpaoenetey Gt cok Acay mttaer THOTICRNIOR ..... 0. . Lik. Ch Daw eda iy wd 4d is eee Eeeewsiad. 268 M. Yamamoto and A. Arai (Sendai, Japan) Analysis of critical points in semiconductor optical functions from in situ and real-time spectroscopic ellipsometry .... 272 H. V. Nguyen and R. W. Collins (University Park, PA, USA) Hydrogen diffusion and reaction processes in thin films investigated by real time spectroscopic ellipsometry .......... 276 I. An, R. W. Collins, H. V. Nguyen, K. Vedam, H. S. Witham and R. Messier (University Park, PA, USA) Study by real time ellipsometry of the growth of amorphous and microcrystalline silicon thin films combining glow ge Te CPP TTTELELEEL OLE TILER TEETER 281 N. Layadi, P. Roci i Cabarrocas, V. Yakovlev and B. Dreévillon (Palaiseau, France) Ellipsometry study of non-uniform lateral growth of ZnO thin films... .... 0.0.0.0 0 6c cece ce eect eee ees 286 S. Pittal, P. G. Snyder and N. J. Ianno (Lincoln, NE, USA) Elissometric studies on the oxidation Of thin COMDEr GEMS... . 0... ccc cece cer cence enneeeeneeeenrereereesoerees 289 M. Rauh, P. WiBmann and M. Wolfel (Erlangen, Germany) Real-time monitoring and control during MOVPE growth of CdTe using multiwavelength ellipsometry.............. 293 B. Johs, D. Doerr, S. Pittal (Lincoln, NE, USA), I. B. Bhat and S. Dakshinamurthy (Troy, NY, USA) In situ ellipsometric study of the influence of powder formation on the initial growth of glow discharge a-Si:H....... 297 U. I. Schmidt, B. Schréder and H. Oechsner (Kaiserlautern, Germany) The fastest real time spectroscopic ellipsometry: applications and limitations for in situ and quality control .......... 301 J.-P. Piel, J.-L. Stehle and O. Thomas (Bois-Colombes, France) Part 2 appears as Vol. 234/1-2