Thin Solid Films, 222 (1992) v—vii Contents Quantum Wells Systematic blue shift of exciton luminescence in strained Si, _,Ge,./Si quantum well structures grown by gas source silicon molecular beam I UN) Gir A eee Sek othe VEY ahd a4.b 5 hid ab we dd clk deeb mae we eee ds el tei yee Bes ie Pee eS l S. Fukatsu, H. Yoshida, N. Usami, A. Fujiwara, Y. Takahashi, Y. Shiraki and R. Ito (Tokyo, Japan) Puctormmmescence of Sitse/Si quantum wells prepared by LPCVD «oasis 5 oo.osccee 55 cane oh > Sb Sosce nmb™* 0s Rnneaey slp cdenbes ae 5 L. Vescan, K. Schmidt, C. Dieker (Julich, Germany), H. P. Tang (Lausanne, Switzerland), T. Vescan (Aachen, Germany) and H. Lith (Julich, Germany) Photoluminescence of confined excitations in MBE-grown Si, _,Ge,/Si(100) single quantum wells...........0..00. c.e. ee.u.ee.e s 10 M. Wachter, K. Thonke, R. Sauer, F. Schaffler, H.-J. Herzog and E. Kasper (Ulm, Germany) Magnetotransport studies of remote doped Si/Si,_ Ge, heterostructures grown on relaxed SiGe buffer layers...................04. 15 D. Tobben (Garching, Germany), F. Schaffler (Ulm, Germany), A. Zrenner and G. Abstreiter (Garching, Germany) Electron intersubband absorption in modulation and well-doped Si/Si,_,.Ge, multiple quantum wells......................00000e e 20 H. Hertle (Garching, Germany), F. Schaffler (Ulm, Germany), A. Zrenner, G. Abstreiter and E. Gornik (Garching, Germany) PEGS THRMSROTT 1 Si, chins GUNNS WOTRE GT TOW SOURUTOTEIOS. ow. cc ect peso penevenccebocestccesncepneseereneys 24 C. J. Emeleus, T. E. Whall, D. W. Smith, R. A. Kubiak, E. H. C. Parker (Coventry, UK) and M. J. Kearney (Wembley, UK) Band gap luminescence in pseudomorphic Si, _,Ge, quantum wells grown by molecular beam epitaxy................0...0000000. 27 J. Brunner, U. Menczigar, M. Gail, E. Freiss and G. Abstreiter (Garching, Germany) Growth Methods The deposition of Si—Ge strained layers from GeH,, SiH,Cl,, SiH, and Si,Hg.... 2... cc cece eee eens 30 D. J. Meyer (Tempe, AZ, USA) and T. I. Kamins (Palo Alta, CA, USA) Chemical vapour deposition of epitaxial SiGe thin films from SiH,-GeH,—HC1-—H, gas mixtures in an atmospheric pressure process 34 H. Kihne, Th. Morgenstern, P. Zaumseil, D. Kriger, E. Bugiel and G. Ritter (Frankfurt, Germany) Si/SiGe/Si heterostructure growth without interface roughness at high germanium mole fractions by low temperature low pressure CARE Came GUNN an 5 685 TN NAIR UT Te EI fe EPR Da OPE Be PRS ES LD a a TOUR hy te 38 R. Schiitz, J. Murota, T. Maeda, R. Kircher, K. Yokoo, S. Ono (Sendai, Japan) and H. L. Hartnagel (Darmstadt, Germany) A comparative study of heavy boron doping in silicon and Si, _,Ge, layers grown by molecular beam epitaxy .................... 42 M. R. Sardela, Jr., W.-X. Ni, H. Radpisheh and G. V. Hansson (Linkoping, Sweden) Photoluminescence and X-ray diffraction study of highly uniform silicon and Ge,Si,_, epitaxial layers ...................0020005. 46 D. W. Greve, R. Misra, T. E. Schlesinger, G. McLaughlin (Pittsburgh, PA, USA) and M. A. Capano (Dayton, OH, USA) Low temperature silicon and Si,_,Ge, epitaxy by rapid thermal chemical vapour deposition using hydrides....................04. 52 D. Dutartre, P. Warren, I. Berbezier and P. Perret (Meylan, France) Crpeteieaetion OF aaocpinnes (ie. iis... ,T R Gace 3 5 6:58 5608 + bee Head + eR 6dFs noted « OF * edd ean he < cena 57 F. Eldelman, Y. Komem (Haifa, Israel), S. S. Iyer, (New York, NY, USA), J. Heydenreich and D. Baither (Halle-am-salle, Germany) Growth and Characterization Photoluminescence and electrical characterization of SiGe/Si heterostructures grown by rapid thermal chemical vapour deposition ... 60 G. Bremond, A. Souifi, T. Benyattou (Villeurbanne, France) and D. Dutartre (Meylan, France) Characterization of SiGe multiple quantum wells by spectroscopic ellipsometry and photoluminescence ..................00.00005 69 J. Hulse, N. Rowell, J.-P. Noél and S. Rolfe (Ottawa, Ont., Canada) SiGe materials characterized by high resolution Raman spectroscopy and spectroscopic ellipsometry. ............c.ec.e .ee0 ee0e e e 73 P. Evrard, J. L. Stehle (Bois-Colombes, France), C. Pickering and R. T. Caline (Malvern, UK) Evolution of surface morphology and strain during SiGe epitaxy .......... 0... cece cece eee ence eee ene en eens 78 A. J. Pidduck, D. J. Robbins, A. G. Cullis, W. Y. Leong and A. M. Pitt (Malvern, UK) Photoreectines study ‘of ‘strained (00!) Si, |. 056;(F E Inyere™. 00... 20000 OL ISOM O8. Jodowiins 2. Jee.) aya, dae au 85 Y. Yin, F. H. Pollak (Brooklyn, NY, USA), P. Auvray (Lannion, France), D. Dutartre, R. Pantel and J. A. Chroboczek (Meylan, France) Band edge and deep level photoluminescence of fully strained Si,_,Ge,/Si alloys ........ 00... cc ccc eee teens 89 J. Denzel, K. Thonke, J. Spitzer, R. Sauer, H. Kibbel, H.-J. Herzog and E. Kasper (Ulm, Germany) Observation of electroluminescence from pseudomorphic Si,_,Ge, alloy layers ...... 0.0... cccecce eee eee eens 94 U. Mantz, K. Thonke, R. Sauer, E. Kasper, H. Kibbel, F. Schaffler and H.-J. Herzog (Ulm, Germany) vi Surfaces and Interfaces Atomistic processes of surface segregation during Si-Ge MBE growth. ........ 0.0... cc ccc cece eee e eee eee een enens 98 D. E. Jesson, S. J. Pennycook (Oak Ridge, TN, USA), J.-M. Baribeau and D. C. Houghton (Ottawa, Ont., Canada) Germanium segregation induced reconstruction of SiGe layers deposited on Si(100).. 2.2.0.0... eeeeee ee e eee 104 R. Butz and S. Kampers (Jiilich, Germany) Temperature-dependent growth anisotropy observed on Si(001) surfaces during silicon gas source molecular beam epitaxy using A i a a Se i ee a aid ak ee REA Da a en hi ane hob RHE ELS LESTER «2990S 2 EROS EONS oReRE RCE ES 108 S. M. Mokler, N. Ohtani, J. Zhang and B. A. Joyce (London, UK) Eaeeeee GE & GUCTROUUEE GUL Te BOWEN GT TATIe TUTITOURIIICIIIOD. noo oie onc cee cere cet bee ic cecseceevesehwdre snlaeparmd maenpeswe § 112 K. Sakamoto, K. Miki, T. Sakamoto, H. Yamaguchi, H. Oyanagi, H. Matsuhata and K. Kyoya (Tsukuba, Japan) The electrical assessment of p-isotype Si/SiGe/Si heterostructures grown by MBE....0.0.0. cec.e .eee. ee.e e.ee. t.een 6een s 116 J. C. Brighten, R. A. Kubiak, P. J. Phillips, T. E. Whall, E. H. C. Parker (Coventry, UK), I. D. Kawkins and A. R. Peaker (Manchester, UK) Processing /Devices Normal incidence hole intersubband quantum well infrared photodetectors in pseudomorphic Ge,Si,_,/Si....... 0.2.6... ..020 008 120 R. People, J. C. Bean, S. K. Sputz, C. G. Bethea and L. J. Peticolas (Murray Hill, NJ, USA) Low-temperature in situ cleaning of silicon wafers with an ultra high vacuum compatible plasma source..................00000005 126 J. Ramm, E. Beck, A. Ziiger (Balzers, Liechtenstein), A.D ommann (Buchs, Switzerland) and R. E. Pixley (Zurich, Switzerland) Molecular beam epitaxy grown Si/Siy g;Ge,y ,;; heterojunction bipolar transistors with ideal /—V characteristics..................5-: 132 D. J. Gravesteijn, A. Pruijmboom, W. J. Kersten, J. M. L. van Rooij-Mulder, A. H. Reader and J. Slotboom (Eindhoven, The Netherlands) 50 GHz Si, _,Ge, heterobipolar transistor: growth of the complete layer sequence by molecular beam epitaxy ..................04. E. Kasper, H. Kibbel and A. Gruhle (Ulm, Germany) A comparison of the behaviour of Si, ;Gey ; alloy during dry and wet oxidation........... 0... 0c cece ccc ee eee eee eee 14] J. P. Zhang, P. L. F. Hemment (Guildford, UK), S. M. Newstead, A. R. Powell, T. E. Whall and E. H. C. Parker (Coventry, UK) rs eee ak CAAA SEEMS ET EES SLAP RADE RRO RSA DOSER LOOK CNN ESOS Ee DDS ee A Ok eR 145 V. Craciun (London, UK), A. H. Reader, W. Kersten, J. Timmers, D. J. Gravesteijn (Eindhoven, The Netherlands) and I. W. Boyd (London, UK) nn er ka cae MAD S OWES RLSRR NAAN ROSSD OS PEGE COTE AROS CES NOSED CR eeen eee es J. F. Nutzel, F. Meier, E. Friess and G. Abstreiter (Garching, Germany) Electrical characterization of Si-Ge heterostructure bipolar transistors. ............ 6. 00sec cece cece eee e eee e tenet teen en ee eens 154 J. Engvall, V. Nagesh, H. G. Grimmeiss (Lund, Sweden), H.-U. Schreiber (Bochum, Germany) and E. Kasper (Ulm, Germany) Strain relaxation in epitaxial Si,_.Ge,./Si(100) layers induced by reaction with palladium ........5.0.0 c.e.ce. .cec.e e.ee .ee e 157 A. Buxbaum, E. Zolotoyabko, M. Eizenberg (Haifa, Israel) and F. Schaffler (Ulm, Germany) Strain/Defects The energy of systems of misfit dislocations in epitaxial strained layers ....... 1.01.6. c cece eee ne ot aid baw aero beens de deine oe 161 A. Atkinson (Didcot, UK) and S. C. Jain (Leuven, Belgium) 1 MeV electron irratiation induced degradation of boron-doped strained Si,_,Ge, layers... 0.2.0.0... ccceee eens 166 J. Vanhellemont, M.-A. Trauwaert, J. Poortmans, M. Caymax (Leuven, Belgium) and P. Clauws (Gent, Belgium) Deep level transient spectroscopy study of defects in megaelectronvolt germanium ion implanted silicon ...................000000% 173 C. Jagadish, B. G. Svensson, N. Hauser and J. S. Williams (Canberra, Australia) Crystallization kinetics of boron- and germanium-implanted <100) Si: a balance between doping and strain effects................. 176 F. Corni, R. Tonini, G. Ottaviani (Modena, Italy), M. Servidori (Bologna, Italy) and F. Priolo (Catania, Italy) Stress in Si,_,Ge, films prepared by ion beam sputtering: origin and relaxation ......00.. ccc. cec.e ee.e .ee ec.t t.ence. ee.e ee ens 180 Y. Le Meur, F. Meyer, C. Pellet, C. Schwebel, P. MOller (Paris, France), A. Buxbaum, (Haifa, Israel), A. Raizman (Yavne, Israel) and M. Eizenberg (Haifa, Israel) eo a chk 6 KEES RE DAWEH S408 BOKASS OO RE HO6 ER DOK Sd ER KERN COR E+ aN ECE i 184 G. Heigl, G. Span (Leoben, Austria) and E. Kasper (Ulm, Germany) Experimental study of Si-Ge tetrahedral solid solution in Ni-Co—Mg tales. ....c.c ccc. cc c.ece c.cc ce.c ce.nce c.ccc.scce.ecec ees 189 F. Martin, S. Petit, A. Decarreau, O. Grauby (Poitiers, France), J. L. Hazemann (Grenoble, France) and Y. Noack (Marseille, France) Porous Silicon Electroluminescent performance of porous silicon F. Kozlowski, M. Sauter, P. Steiner, A. Richter, H. Sandmaier and W. Lang (Munich, Germany) Bright visible photoluminescence in thin silicon films T. P. Pearsall, J. C. Adams, J. N. Kidder, Jr., P. S. Williams, S. A. Chambers, J. Lach, D. T. Schwartz and B. Z. Nosho, (Seattle, WA, USA) Ultrathin Si/Ge Superlattices (Workshop) Quantitative theory of optical properties of Si—Ge heterostructures M. Jaros, A. W. Beavis, P. J. Hagon, R. J. Turton, A. Miloszewski and K. B. Wong (Newcastle upon Tyne, UK) Electronic properties of strained Si/Ge superlattices: tight binding approach G. Theodorou, C. Tserbak and H. M. Polatoglou (Thessaloniki, Greece) Si/Ge superlattice embedded in silicon and germanium: electronic structure and transition probabilities H. M. Polatogou, C. Tserbak and G. Theodorou (Thessaloniki, Greece) Buffer concepts of ultrathin Si,,Ge,, superlattices H. Presting and H. Kibbel (Ulm, Germany) Characterization of short-period Si,,Ge,, superlattices by high-resolution transmission electron microscopy and X-ray diffraction W. Jager, D. Stenkamp, P. Ehrhart, K. Leifer, W. Sybertz (Jiilich, Germany), H. Kibbel, H. Presting and E. Kasper (Ulm, Germany) Photoluminescence studies of Si/Si,_,.Ge, quantum wells and Si,,Ge,, superlattices U. Menczigar, J. Brunner, E. Freiss, M. Gail, G. Abstreiter (Garching, Germany), H. Kibbel, H. Presting and E. Kasper (Ulm, Germany) Photoluminescence from short-period strained-layer superlattices of (Si,Ge,), after hydrogen passivation K. Dettmer (Braunschweig, Germany) and J. Weber (Stuttgart, Germany) Optical and electrical characterization of Si/Ge superlattices H. G. Grimmeiss, V. Nagesh, J. Engvall, J. Olajos (Lund, Sweden), H. Presting, H. Kibbel and E. Kasper (Ulm, Germany) Band-to-band transitions in strain-symmetrized, short-period Si/Ge superlattices J. Olajos, J. Engvall, H. G. Grimmeiss (Lund, Sweden), H. Kibbel, E. Kasper and H. Presting (Ulm, Germany) Optical transitions in strained Ge/Si superlattices U. Schmid, J. Humliéek, F. Lukes, M. Cardona (Stuttgart, Germany), H. Presting, H. Kibbel, E. Kasper (Ulm, Germany), K. Eberl, W. Wegscheider and G. Abstreiter (Garching, Germany) In-plane and vertical high-frequency conductivity in Si/Ge short-period superlattices T. Fromherz, M. Helm, G. Bauer (Linz, Austria), H. Kibbel and E. Kasper (Ulm, Germany) Differential optical absorption spectroscopy and X-ray characterization of symmetrically strained Ge—Si superlattices T. P. Pearsall, C. C. M. Bitz, L. B. Sorensen (Seattle, WA, USA), H. Presting and E. Kasper (Ulm, Germany) Ambient pressure scanning tunneling microscope imaging of hydrogen-passivated Si/Ge multilayers T. Pinnington, A. Sanderson, T. Tiedje (Vancouver, BC, Canada), T. P. Pearsall (Seattle, WA, USA), E. Kasper and H. Presting (Ulm, Germany) Photocapacitance studies of short-period Si/Ge superlattices V. Nagesh, H. G. Grimmeiss (Lund, Sweden), H. Presting, H. Kibbel and E. Kasper (Ulm, Germany) In-plane Raman scattering of [001]-grown Si/Ge superlattices R. Schorer, W. Wegscheider, K. Eberl (Garching, Germany), E. Kasper, H. Kibbel (Ulm, Germany) and G. Abstreiter (Garching, Germany) Author Index Subject Index