Thin Solid Films, 221 (1992) 324-325 Author Index of Volume 221 Abe, Y., 220 Hasmonay, H., 292 Montaner, A., 196 Adamec, F., 281 Heinrich, A., 140 Mueller, C. H., 254 Agrawal, A., 239 Herino, R., 27 Miinder, H., 27 Agrawal, R. K., 239 Hiraoka, K., 120 Muraleedharan, T. M., 104 Al-Robaee, M. S., 214 Hochapfel, A., 292 Murunaka, S., | Albrecht, O., 276 Holloway, P. H., 254 Ambroz, M., 281 Howarth, V., 285 Nakagiri, T., 276 Andrzejak, C., 27 Hua, Z., 271 Nakayama, T., 220 Artung, N., 207 Huang, N. K., 9 Nalivaiko, O. Y., 191 Asai, N., 285 Hunnikin, B. J., 262 Narashimha Rao, K., 214 Aymerich, X., 147 Hwang, Y.-S., 203 Nieh, T. G., 89 Nishiguchi, K., 98 Balog, P., 281 Ionov, R., 39 Nishikawa, K., 72 Beldon, H. S., 262 Ishii, H., 96 Nosaka, T., 72 Berger, M. G., 27 Itabashi, S., 79 Bhattacharyya, D., Ogawa, S., 72 Boakye, F., 224 Okamoto, A., 72 Bozack, M. J., 55 Jaffrain, M., 292 Oliveira, Jr., O. N., 5 Brickner, W., 140 Jiang, G. S., 34 Onisawa, K., 220 Bruyeére, J. C., 65 Joswig, H., 228 Ono, Y. A., 220 Brynda, E., 281 Joubert, J. C., 44 Osten, H. J., 61 Bulhoes, L. O. S., 5 Oztiirk, Z. Z., 207 Klad’ko, V. P., 127 Cai, ¥ 271 Klemradt, U., 27 Paek, S.-H., 203 Caron-Popowich, R’S., 239 Kobayashi, K., 298 Pal, A. K., 154 CCCChhhhooaoi,uu, d, h HuJ.T.r--.iCS ,..,C , . ,2S 2.0,083 39 154 KKKroraassvtntyisutonsvik,ny ,, S.G V..V .,EY ..,,1 9111 2971 PPPeealnml,le egr,X, . J.WF,.. ,,3 13824 2 8 Krieger, D., 61 Peretti, P., 292 Kukushkin, S. A., 267 Plyatsko, S. V., Clement, M.., Kurps, R., 61 Coath, J. A., Cronin, J. P., 23 Reynes, B., 65 Lampert, C. M., 23 Roberts, D. M., 239 Lane, D. W., 262 Roch, C., 17, 65 Delgado, J. C., 17 Dian, J., 281 Langlet, M., 44 Roeser, D., 61 Lazzari, J. L., 196 Rogers, K. D., 262 Lee, D.-D., 304 Rubets, V. P., 267 Efimov, V. M., 160 Eguchi, K., 276 Lesnikova, V. P., 191 Ehrhardt, J. J., 114 Li, J. H., 34 Sambles, J. R., 311 Esaev, D. G., 160 Ligeon, M., 27 Sanz, J. M., 21 Lin, Z. D., 34 Sarychev, O. E., 191 Faria, R. M., 5 Lippert, G., 61 Savall, C., 65 Fen, X. B., 34 Liu, R., 318 Schubert, G., 140 Feng, Z. R., 9 Llinares, C., 196 Sebastian, P. J., 233 Ferreira, M., 5 Lu, F. X., 34 Sella, C., 183 Fujiwara, I., 285 Lu, M., 271 Selvi, S., 207 Fuyama, M., 20 Luo, W., 271 Shen, X., 271 Lith, H., 27 Shivalingappa, L., 214 Gadenne, M., 183 Shklyaev, A. A., 160 Gadenne, P., 183 Marage, P., 44 Silvain, J. F., 114 Gao, Q. J., 34 Martin, F., 147 Sisk, P. J., 13 Gongalves, D., 5 Martin, J. C., 183 Sizov, F. F., 127 Granko, V. I., 191 Martinez-Duart, J. M., 21 Smal, I. V., 191 Grassie, A. D. C., 224 Matsuda, H., 276 Sohn, B.-K., 304 GrieBmann, H., 140 Mattoso, L. H. C., 5 Sundaram, K. B., 13 Gromovoj, Yu. S., 127 Mayer, B., 166 Gupta, P., 154 Meletis, E. I., 104 Tajima, K., 298 Mezerreg, A., 196 Takahashi, K., 98 Habibi, H. R., 239 Mohan, S., 214 Takahashi, M., 298 Hala, J., 281 Monch, J.-I., 140 Takahashi, Y., 98 Thin Solid Films, 221 (1992) 324-325 Author Index of Volume 221 Abe, Y., 220 Hasmonay, H., 292 Montaner, A., 196 Adamec, F., 281 Heinrich, A., 140 Mueller, C. H., 254 Agrawal, A., 239 Herino, R., 27 Miinder, H., 27 Agrawal, R. K., 239 Hiraoka, K., 120 Muraleedharan, T. M., 104 Al-Robaee, M. S., 214 Hochapfel, A., 292 Murunaka, S., | Albrecht, O., 276 Holloway, P. H., 254 Ambroz, M., 281 Howarth, V., 285 Nakagiri, T., 276 Andrzejak, C., 27 Hua, Z., 271 Nakayama, T., 220 Artung, N., 207 Huang, N. K., 9 Nalivaiko, O. Y., 191 Asai, N., 285 Hunnikin, B. J., 262 Narashimha Rao, K., 214 Aymerich, X., 147 Hwang, Y.-S., 203 Nieh, T. G., 89 Nishiguchi, K., 98 Balog, P., 281 Ionov, R., 39 Nishikawa, K., 72 Beldon, H. S., 262 Ishii, H., 96 Nosaka, T., 72 Berger, M. G., 27 Itabashi, S., 79 Bhattacharyya, D., Ogawa, S., 72 Boakye, F., 224 Okamoto, A., 72 Bozack, M. J., 55 Jaffrain, M., 292 Oliveira, Jr., O. N., 5 Brickner, W., 140 Jiang, G. S., 34 Onisawa, K., 220 Bruyeére, J. C., 65 Joswig, H., 228 Ono, Y. A., 220 Brynda, E., 281 Joubert, J. C., 44 Osten, H. J., 61 Bulhoes, L. O. S., 5 Oztiirk, Z. Z., 207 Klad’ko, V. P., 127 Cai, ¥ 271 Klemradt, U., 27 Paek, S.-H., 203 Caron-Popowich, R’S., 239 Kobayashi, K., 298 Pal, A. K., 154 CCCChhhhooaoi,uu, d, h HuJ.T.r--.iCS ,..,C , . ,2S 2.0,083 39 154 KKKroraassvtntyisutonsvik,ny ,, S.G V..V .,EY ..,,1 9111 2971 PPPeealnml,le egr,X, . J.WF,.. ,,3 13824 2 8 Krieger, D., 61 Peretti, P., 292 Kukushkin, S. A., 267 Plyatsko, S. V., Clement, M.., Kurps, R., 61 Coath, J. A., Cronin, J. P., 23 Reynes, B., 65 Lampert, C. M., 23 Roberts, D. M., 239 Lane, D. W., 262 Roch, C., 17, 65 Delgado, J. C., 17 Dian, J., 281 Langlet, M., 44 Roeser, D., 61 Lazzari, J. L., 196 Rogers, K. D., 262 Lee, D.-D., 304 Rubets, V. P., 267 Efimov, V. M., 160 Eguchi, K., 276 Lesnikova, V. P., 191 Ehrhardt, J. J., 114 Li, J. H., 34 Sambles, J. R., 311 Esaev, D. G., 160 Ligeon, M., 27 Sanz, J. M., 21 Lin, Z. D., 34 Sarychev, O. E., 191 Faria, R. M., 5 Lippert, G., 61 Savall, C., 65 Fen, X. B., 34 Liu, R., 318 Schubert, G., 140 Feng, Z. R., 9 Llinares, C., 196 Sebastian, P. J., 233 Ferreira, M., 5 Lu, F. X., 34 Sella, C., 183 Fujiwara, I., 285 Lu, M., 271 Selvi, S., 207 Fuyama, M., 20 Luo, W., 271 Shen, X., 271 Lith, H., 27 Shivalingappa, L., 214 Gadenne, M., 183 Shklyaev, A. A., 160 Gadenne, P., 183 Marage, P., 44 Silvain, J. F., 114 Gao, Q. J., 34 Martin, F., 147 Sisk, P. J., 13 Gongalves, D., 5 Martin, J. C., 183 Sizov, F. F., 127 Granko, V. I., 191 Martinez-Duart, J. M., 21 Smal, I. V., 191 Grassie, A. D. C., 224 Matsuda, H., 276 Sohn, B.-K., 304 GrieBmann, H., 140 Mattoso, L. H. C., 5 Sundaram, K. B., 13 Gromovoj, Yu. S., 127 Mayer, B., 166 Gupta, P., 154 Meletis, E. I., 104 Tajima, K., 298 Mezerreg, A., 196 Takahashi, K., 98 Habibi, H. R., 239 Mohan, S., 214 Takahashi, M., 298 Hala, J., 281 Monch, J.-I., 140 Takahashi, Y., 98 Tamaoki, N., 132 Walz, D., 44 Yoshihara, H., 79 Turtsevich, A. S., 191 Wang, D. Z., 9 Yoshimura, S., 132 Yoshitake, M., 72 Vacha, M., 281 Yuan, H., 34 Veyrat, A., 114 Yamaoka, T., 132 Vukusic, P. S., 311 Yang, B. X., 34 Zeng, Y., 271 Yang, N., 271 Zhang, X., 34 Wahid, P. F., 13 Yang, Y. C., 34 Zhang, Z., 271 Thin Solid Films, 221 (1992) 326-329 Subject Index of Volume 221 Acetylene Chemisorption deposition of Zr—C thin films and plasma-polymerized electrical properties of vacuum-evaporated stoichiometric and hydrocarbon films in the reactive magnetron sputtering non-stoichiometric CdTe thin films for opto-electronic process, 72 applications, 233 Adhesion Coatings effect of the temperature on the adhesion and the morphology effect of deposition pressure on the microstructure and of thin metal films evaporated on polyethlene electrochromic properties of electron-beam-evaporated terephthalate, 114 nickel oxide films, 239 Adsorption surface modification of pure titanium and Ti-6Al-—4V by adsorbability of dye molecules on Langmuir— Blodgett films of intensified plasma ion nitriding, 104 long-chain alkylammonium salts, 298 Copper Aluminium effects of surface and interface scattering on the electrical change in the stress of aluminium thin films during high resistivity of Cu/Ag double-layered thin films, 207 temperature storage, 120 Corrosion Aluminium oxide surface modification of pure titanium and Ti-6Al—4V by interface-controlled phase transformation and abnormal grain intensified plasma ion nitriding, 104 growth of «-Al,O, in thin »-alumina films, 89 Amorphous materials correlation between hydrogen thermal evolution and Deposition process morphology in glow discharge deposited a-Si:H films, 17 control of the homogeneity of Langmuir—Blodgett films using high temperature stability of CrSi(W)-N films, 140 the deposition-induced flow in the monolayer, 276 glass and ceramic thin films deposited by an ultrasonically Anisotropy adsorbability of Gye molecules on Langmuir—Blodgett films of assisted sol-gel technique, 44 long-chain alkylammonium salts, 298 reaction of tungsten hexafluoride with Si and TiN surfaces, 55 Diamond control of the homogeneity of Langmuir—Blodgett films using the deposition-induced flow in the monolayer, 276 study of interface structure between diamond film and silicon substrate, 34 Annealing annealing of silicon nitride thin films prepared by plasma- Dielectric properties enhanced chemical vapour deposition with helium dilution, dielectric breakdown properties of Ta,O,/SiO, stacked thin 65 films prepared by r.f. sputtering, 220 Diffusion Auger electron spectroscopy changes induced in the room temperature oxidation of TiSi, stoichiometry effects in TiN diffusion barriers, 228 by Ar* bombardment, 21 surface modification of pure titanium and Ti-6Al—4V by reaction of tungsten hexafluoride with Si and TiN surfaces, 55 intensified plasma ion nitriding, 104 stoichiometry effects in TiN diffusion barriers, 228 role of the silver intermediate layer in Electrical properties and measurements YBa,Cu,0,_,/Ag/In,O,/Si system, 271 composition and electrical properties of Au—Al,O, cermet thin valance Auger analysis of the annealing effect on atomic films: a critical study, 183 interaction at titanium—sapphire, titanium—silica and determination of electrical and optical parameters of silver—silica interfaces, 98 Ga, _, In, As, Sb, _, and Ga, _ , Al, As, Sb, _, thin layers grown on GaSb substrates by IR reflectivity, 196 Biomaterials high temperature stability of CrSi(W)-—N films, 140 monolayer study of the antibiotic ionophore monensin: pH highly conductive and transparent films of tin and fluorine influence and salt effects, 292 doped indium oxide produced by APCVD, 166 preparation and characterization of polycrystalline ZnS, Se, _ , Cadmium telluride films prepared by a two-zone hot wall technique, 154 electrical properties of vacuum-evaporated stoichiometric and Electrochemistry non-stoichiometric CdTe thin films for opto-electronic effect of deposition pressure on the microstructure and applications, 233 electrochromic properties of electron-beam-evaporated Carbides nickel oxide films, 239 deposition of Zr—C thin films and plasma polymerized Electron diffraction hydrocarbon films in the reactive magnetron sputtering study of interface structure between diamond film and silicon process, 72 substrate, 34 Chemical vapour deposition Evaporation study of interface structure between diamond films and silicon laser-assisted evaporation of high-quality narrow-gap thin substrate, 34 films, 127 growth kinetics of low pressure chemically vapour deposited selective tungsten films in WF,—Si and WF,—H, systems, 191 Field emission microscopy highly conductive and transparent films of tin and fluorine field emission and field ion microscopy of zirconiated tungsten doped indium oxide produced by APCVD, 166 emitter, 318 Field ion microscopy Langmuir-Blodgett films field emission and field ion microscopy of zirconiated tungsten adsorbability of dye molecules on Langmuir-—Blodgett films of emitter, 318 long-chain alkylammonium salts, 298 Fluorescence control of the homogeneity of Langmuir—Blodgett films using role of central metal in phthalocyanine Langmuir—Blodgett the deposition-induced flow in the monolayer, 276 films studied by hole burning, 281 preparation and characterization of a novel Langmuir-Blodgett film optical waveguide with non-linear Gallium optical susceptibility inversion, 285 chemical reactions at metal/compound semiconductor role of central metal in phthalocyanine Langmuir—Blodgett interfaces: Au and GaAs, 254 films studied by hole burning, 281 Grain boundary Liquid phase epitaxy change in the stress of aluminium thin films during high determination of electrical and optical parameters of temperature storage, 120 Ga, _, In, As, Sb, _, and Ga, _, Al, As, Sb, _, thin layers preparation and characterization of polycrystalline ZnS, Se, _ , grown on GaSb substrates by IR reflectivity, 196 films prepared by a two-zone hot wall technique, 154 Growth mechanism Manganese characterization of surfactant introduction into germanium- influence of deposition parameters on the low temperature rich Si, _ Ge, molelcular beam epitaxy layer growth on resistivity of «-Mn thin films, 224 silicon by :neans of secondary-ion mass spectrometry and Metallization Auger ele-tron spectroscopy, 61 change in the stress of aluminium thin films during high growth kinetics of low pressure chemically vapour deposited temperature storage, 120 selective tungsten films in WF,—Si and WF,—H, systems, reaction of tungsten hexafluoride with Si and TiN surfaces, 191 55 interface-controlled phase transformation and abnormal grain stoichiometry effects in TiN diffusion barriers, 228 growth of «-Al,O, in thin y-alumina films, 89 valence Auger analysis of the annealing effect on atomic interaction at titanium—sapphire, titanium —silica and Hydrocarbons silver-silica interfaces, 98 effects of added TiO, on characteristics of SnO,-based thick Metals film gas sensors, 304 characterization of the spatial distribution of traps in Si,;N, by Hydrogen field-assisted discharge of annealing of silicon nitride thin films prepared by plasma- metal-—nitride—oxide—semiconductor devices, 147 enhanced chemical vapour deposition with helium dilution, effect of the temperature on the adhesion and the morphology 65 of thin metal films evaporated on polyethylene correlation between hydrogen thermal evolution and terephthalate, 114 morphology in glow discharge deposited a-Si:H films, 17 Migration mechanisms effect of hydrogen on hot electron energy relaxation in SiO, determination of migration mechanisms and their influence on and Si,N, films, 160 the structure of films, 267 Molecular beam epitaxy Indium oxide characterization of surfactant introduction into germanium-rich Si, _ Ge, molecular beam epitaxy layer growth on silicon highly conductive and transparent films of tin and fluorine by means of secondary-ion mass spectrometry and Auger doped indium oxide produced by APCVD, 166 electron spectroscopy, 61 Infrared spectroscopy Monolayers annealing of silicon nitride thin films prepared by plasma- monolayer study of the antibiotic ionophore monensin: pH enhanced chemical vapour deposition with helium dilution, 65 influence and salt effects, 292 adsorbability of dye molecules on Langmuir-—Blodgett films of determination of electrical and optical parameters of long-chain alkylammonium salts, 298 Ga, _, In, As, Sb, _,, and Ga, _ , Al, As, Sb, _, thin layers Multilayers grown on GaSb substrates by IR reflectivity, 196 control of the homogeneity of Langmuir-Blodgett films using Interface the deposition-induced flow in the monolayer, 276 study of interface structure between diamond film and silicon substrate, 34 interface-controlled phase transformation and abnormal grain Nanostructures growth of «-Al,O, in thin y-alumina films, 89 detailed Raman study of porous silicon, 27 interface-induced structural changes in amorphous chalcogenide composition and electrical properties of Au-Al,O, cermet thin superlattices, 39 films: a critical study, 183 valence Auger analysis of the annealing effect on atomic preparation and characterization of a novel interaction at titanium-—sapphire, titanium-silica and Langmuir—Blodgett film optical waveguide with non-linear silver—silica interfaces, 98 optical susceptibility inversion, 285 Ion bombardment Nickel oxide changes induced in the room temperature oxidation of TiSi, effect of deposition pressure on the microstructure and by Ar* bombardment, 21 electrochromic properties of electron-beam-evaporated influence of substrate temperature on the properties of nickel oxide films, 239 argon-ion-assisted-deposited CeO, films, 214 Nitrogen dioxide microanalyses of Ar*-bombarded zirconia—yttria films on cobalt phthalocyanine as a basis for the optical sensing of silicon substrates, 9 nitrogen dioxide using surface plasmon resonance, 311 328 Optical coatings Rutherford backscattering spectroscopy composition and electrical properties of Au-Al,O, cermet thin optical properties and structure of thermally evaporated tin films: a critical study, 183 oxide films, 262 influence of substrate temperature on the properties of argon-ion-assisted-deposited CeO, films, 214 Optical properties Scattering photochromic memory with a non-destructive read-out effects of surface and interface scattering on the electrical property, 132 resistivity of Cu/Ag double-layered thin films, 207 characterization and optimization of cerium dioxide films Second harmonic generation deposited by r.f. magnetron sputtering, 13 preparation and characterization of a novel determination of electrical and optical parameters of Langmuir—Blodgett film optical waveguide with non-linear Ga, _, In, As, Sb, _,, and Ga, _, Al, As, Sb, _, thin layers optical susceptibility inversion, 285 grown on GaSb substrates by IR reflectivity, 196 Secondary ion mass spectrometry highly conductive and transparent films of tin and fluorine characterization of surfactant introduction into germanium-rich doped indium oxide produced by APCVD, 166 Si, _ Ge, molelcular beam epitaxy layer growth on silicon influence of substrate temperature on the properties of by means of secondary-ion mass spectrometry and Auger argon-ion-assisted-deposited CeO, films, 214 electron spectroscopy, 61 optical properties and structure of thermally evaporated tin Selenium oxide films, 262 interface-induced structural changes in amorphous chalcogenide preparation and characterization of a novel superlattices, 39 Langmuir-Blodgett film optical waveguide with non-linear Semiconductor optical susceptibility inversion, 285 characterization of the spatial distribution of traps in Si,N, by Optical spectroscopy field-assisted discharge of photochromic memory with a non-destructive read-out metal—nitride—oxide—semiconductor devices, 147 property, 132 Semiconductors Organic substances determination of migration mechanisms and their influence on photochromic memury with a non-destructive read-out the structure of films, 267 property, 132 electrical characteristics of TaSi,—P*-Si and TiSi,—P*-Si Oxidation contacts formed by rapid thermal annealing, 203 changes induced in the room temperature oxidation of TiSi, preparation and characterization of polycrystalline ZnS, Se, x by Ar* bombardment, 21 films prepared by a two-zone hot wall technique, 154 Oxides Sensors characterization and optimization of cerium dioxide films cobalt phthalocyanine as a basis for the optical sensing deposited by r.f. magnetron sputtering, 13 of nitrogen dioxide using surface plasmon resonance, Oxygen 311 electrical properties of vacuum-evaporated stoichiometric and effects of added TiO, on characteristics of SnO,-based thick non-stoichiometric CdTe thin films for opto-electronic film gas sensors, 304 applications, 233 Silicides changes induced in the room temperature oxidation of TiSi, by Ar* bombardment, 21 Physical vapour deposition electrical characteristics of TaSi,—P*-Si and TiSi,—P*-Si characterization and optimization of cerium dioxide films contacts formed by rapid thermal annealing, 203 deposited by r.f. magnetron sputtering, 13 Silicon high temperature stability of CrSi(W)-—N films, 140 detailed Raman study of porous silicon, 27 Platinum Silicon nitride surface evaluation of ultrathin platinum films, 79 annealing of silicon nitride thin films prepared by Polyethylene terephthalate plasma-enhanced chemical vapour deposition with helium effect of the temperature on the adhesion and the morphology dilution, 65 of thin metal films evaporated on polyethylene characterization of the spatial distribution of traps in Si,N, by terephthalate, 114 field-assisted discharge of Polymers metal—nitride—oxide—semiconductor devices, 147 photochromic memory with a non-destructive read-out effect of hydrogen on hot electron energy relaxation in SiO, property, 132 and Si,N, films, 160 Silicon oxide dielectric breakdown properties of Ta,O,/SiO, stacked thin Raman scattering films prepared by r.f. sputtering, 220 detailed Raman study of porous silicon, 27 effect of hydrogen on hot electron energy relaxation in SiO, preparation and characterization of polycrystalline ZnS, Se, _ , and Si,N, films, 160 films prepared by a two-zone hot wall technique, 154 glass and ceramic thin films deposited by an ultrasonically Reaction kinetics assisted sol-gel technique, 44 valence Auger analysis of the annealing effect on atomic Silver interaction at titanium—sapphire, titanium-silica and chemical reactions at metal/compound semiconductor silver—silica interfaces, 98 interfaces: Au and GaAs, 254 Resistivity effects of surface and interface scattering on the influence of deposition parameters on the low temperature electrical resistivity of Cu/Ag double-layered thin resistivity of x-Mn thin films, 224 films, 207 Sputtering Tantalum deposition of Zr—C thin films and plasma-polymerized dielectric breakdown properties of Ta,O;/SiO, stacked thin hydrocarbon films in the reactive magnetron sputtering films prepared by r.f. sputtering, 220 process, 72 electrical characteristics of TaSi,—P*-Si and TiSi,—P*-Si dielectric breakdown properties of Ta,O,/SiO, stacked thin contacts formed by rapid thermal annealing, 203 films prepared by r.f. sputtering, 220 Thermal desorption role of the silver intermediate layer in correlation between hydrogen thermal evolution and YBa,Cu,0,_ ,/Ag/In,O,/Si system, 271 morphology in glow discharge deposited a-Si:H films, 17 Stress Tin oxide change in the stress of aluminium thin films during high effects of added TiO, on characteristics of SnO,-based thick temperature storage, 120 film gas sensors, 304 high temperature stability of CrSi(W)-—N films, 140 optical properties and structure of thermally evaporated tin Structural properties oxide films, 262 influence of substrate temperature on the properties of Titanium argon-ion-assisted-deposited CeO, films, 214 electrical characteristics of TaSi,—P*-Si and TiSi,—P*-Si Structure contacts formed by rapid thermal annealing, 203 determination of migration mechanisms and their influence on Titanium nitride the structure of films, 267 stoichiometry effects in TiN diffusion barriers, 228 Superconductivity surface modification of pure titanium and Ti—6Al—4V by role of the silver intermediate layer in intensified plasma ion nitriding, 104 YBa,Cu,0,_ , /Ag/In,O,;/Si system, 271 Titanium oxide Superlattices effects of added TiO, on characteristics of SnO,-based thick interface-induced structural changes in amorphous chalcogenide film gas sensors, 304 superlattices, 39 glass and ceramic thin films deposited by an ultrasonically Surface and interface states assisted sol-gel technique, 44 monolayer study of the antibiotic ionophore monensin: pH Tungsten influence and salt effects, 292 field emission and field ion microscopy of zirconiated tungsten Surface energy emitter, 318 interface-controlled phase transformation and abnormal growth kinetics of low pressure chemically vapour deposited grain growth of «-Al,O, in thin y-alumina films, selective tungsten films in WF,—Si and WF,—H, systems, 89 191 Surface morphology reaction of tungsten hexafluoride with Si and TiN surfaces, 55 correlation between hydrogen thermal evolution and morphology in glow discharge deposited a-Si:H films, Vacancies 17 electrical properties of vacuum-evaporated stoichiometric and effect of deposition pressure on the microstructure and non-stoichiometric CdTe thin films for opto-electronic electrochromic properties of electron-beam-evaporated applications, 233 nickel oxide films, 239 surface evaluation of ultrathin platinum films, 79 X-ray diffraction Surface plasmons detailed Raman study of porous silicon, 27 cobalt phthalocyanine as a basis for the optical sensing optical properties and structure of thermally evaporated tin of nitrogen dioxide using surface plasmon resonance, oxide films, 262 311 role of the silver intermediate layer in Surface pressure YBa,Cu,0,_ . /Ag/In,O,/Si system, 271 monolayer study of the antibiotic ionophore monensin: pH X-ray total reflection analysis influence and salt effects, 292 surface evaluation of ultrathin platinum films, 79 Surface roughness surface evalu:tion of ultrathin platinum films, 79 Zirconium Surface segregation deposition of Zr—C thin films and plasma polymerized characterization of surfaciant introduction into germanium-rich hydrocarbon films in the reactive magnetron sputtering Si, _ Ge, molelcular beam epitaxy layer growth on silicon process, 72 by means of secondary-ion mass spectrometry and Auger field emission and field ion microscopy of zirconiated tungsten electron spectroscopy, 61 emitter, 318