SOLID-STATE ELECTRONICS Nama laicciaarclarelarclasleleiaare) Author and Keyword Indexes Volume 49, 2005 “@ “Lily ELSEVIER SOLID-STATE ELECTRONICS FOUNDING EDITOR DR W. CRAWFORD DUNLAP EDITORS PROFESSOR Y. ARAKAWA Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-Ku, Tokyo 153-8505, Japan PROFESSOR S. CRISTOLOVEANU LPCS-ENSERG, 23 Avenue des Martyrs, BP 257, F-38016, Grenoble Cedex 1, France PROFESSOR E. CALLEJA Departamento Ingenieria Electronica — ISOM, ETSI Telecomunicacion, Universidad Politécnica, Ciudad Universitaria, 28040 Madrid, Spain PROFESSOR A. ZASLAVSKY Division of Engineering, Brown University, Providence, RI 02912, U.S.A. HONORARY EDITORIAL ADVISORY BOARD A. G. Baca, Albuquerque, NM K. L. JENSEN, Washington, DC eeceoeDeaeSeeyeaoy eee e e G. BACCARANI, Bologna R. F. PlERRET, W. Lafayette, IN E. R. Brown, Los Angeles, CA F. REN, Gainesville, FL C. BULUCEA, Santa Clara, CA S. RINGEL, Columbus, OH R. H. EKLUND, Dallas, TX M. SHur, Troy, NY D. K. Ferry, Tempe, AZ T. SUGANO, Tokyo J. G. Fossum, Gainesville, FL M. WILLANDER, Goteborg G. GHIBAUDO, Grenoble C.-Y. Wu, Asinchu, R.O.C. Publishing Office Elsevier Ltd., The Boulevard, Langford Lane, Kidlington, Oxford OX5 1GB, U.K. (Phone: Oxford (01865) 843000; Fax: (01865) 843010). Author Enquiries For enquiries relating to the submission of articles (including electronic submission where available) please visit Elsevier's Author Gateway at http: authors.elsevier.com. The Author Gateway also provides the facility to track accepted articles and set up e-mail alerts to inform you of when an article’s status has changed, as well as detailed artwork guidelines, copyright information, frequently asked questions and more. Contact details for questions arising after acceptance of an article, especially those relating to proofs, are provided after registration of an article for publication. Frequency: Published monthly ‘ Subscription Rates Annual Institutional Subscription Rates 2005. 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Priority rates are available upon request. Claims for missing issues should be made within six months of the date of dispatch. Copyright © 2005 Elsevier Ltd USA mailing notice: Solid-State Electronics (ISSN 0038-1101), is published monthly by Elsevier Ltd. (The Boulevard, Langford Lane, Kidlington, Oxford OX5 1GB, UK). Annual subscription price in the USA US$ 3049 (valid in North, Central and South America), including air speed delivery. Periodical postage rate paid at Rahway NJ and additional mailing offices. USA POSTMASTER: Send change of address to Solid-State Electronics, Elsevier, 6277 Sea Harbor Drive, Orlando, FL 32887-4800. AIRFREIGHT AND MAILING in the USA by Mercury International Limited, 365, Blair Road, Avenel, NJ 07001. AUTHOR INDEX Abdel-Hamid H. M., 1163 Benech P., 1477 Chen H., 1669 Abonnenc M., 674 Benistant F., 1241 Chen L., 1081 Achard H., 529 Bennett B. R., 1875 Chen M., 981 Acred B., 1722 Berthelot A., 1767 Chen P. C., 459, 1347 Adamu-Lema F., 740 Beurze R., 1849 Chen Q., 271 Adesida I., 774 Bhat N., 431 Chen S., 940 Afzal B., 1262 Bhatnagar P., 453 Chen S. M., 37 Afzali-Kusha A., 1262, 1341 Bian E. L., 473 Chen S.-M., 1905 Agarwal A. K., 233, 2011 Bianconi M., 183 Chen T. L., 267 Aggarwal S. Kr., 1206 Bindra S., 558 Chen T. S., 1387 Agrawal S., 1396 Biyikli N., 117 Chen W. B., 37 Ahopelto J., 1504, 1516 Boeck B., 1767 Chen Y.-B., 1921 Ahsan A. K. M., 654 Bol D., 1185 Chen Y.-J., 163 Akil N., 1849 Boltovets M. S., 1228 Chen Y.-M., 808 Akturk A., 1127 Bonafos C., 1734 Chen Y.-W., 163 Alexander C., 733 Boos J. B., 1875 Cheng B., 740 Alivov Ya. I., 1693 Borgarino M., 1361 Cheng C.-C., 1381 Allen S. J., 1049 Bortesi L., 1805 Cheng X., 43 Altindal $., 1052 Boschi G., 1791 Cherkashin N., 1734 Altomare L., 674 Bouchakour R., 1759 Chernyak L., 1662 Ambrico M., 413 Bouchiat V., 1497 Chiang T. K., 317 Amirabadi A., 1262 Boudart B., 1589 Chiang Y.-C., 1391 An X., 479 Bougrioua Z., 1589 Chikichev S. I., 385 Ancona M. G., 1875 Boukhenoufa A., 1376 Chiu H.-C., 1391 Anderson S. G. H., 1722, 1754 Bowman T., 1978 Chiu S.-Y., 357 Andrieu F., 721 Boyd D. C., 1669 Cho H. K., 774 Anil K. G., 763 Bramlett M., 1708 Cho N.-K., 1297 Appenzeller J., 73 Brandes G. R., 1330 Choi C.-J., 1213 Armstrong B. M., 1461 Bremond G., 1112 Choi J. B., 795 Armstrong G. A., 1034 Bresson N., 1522 Choi S., 377 Arulkumaran S., 1632 Breuil L., 1862 Choi S. H., 205, 838 Asano T., 2006 Brown A. R., 733 Choi W.-K., 524 Asenov A., 733, 740 Brunco D. P., 1841 Choi Y.-I., 834 Ashburn P., 529, 1556 Bruno G., 413 Chou J. H., 1071 Ataee Naeini M., 871 Buckley J., 1833 Chow D., 981 Atarodi S. M., 1198 Bude J., 790 Christiansen S. H., 1669 Aubry-Fortuna V., 1320 Bui S., 981 Chu B., 1956 Augelli V., 413 Buiu O., 1556 Chu J. O., 1669 Avrutin V., 1693 Buonocore F., 1820 Chu J. P.. 3 Ayers J. E., 2002 Bychikhin S., 421 Chu J.-Y., 1381 Aytur O., 117 Chu S. N. G., 790 Aziz M. S., 1314 Chu Y.-C., 357 Cabassi M. A., 227 Chuang R. W., 1347 Bach K. H., 618 Caddemi A., 915, 928 Chun S. K., 31 Bae J., 1576 Cai B., 940 Chung I.-J., 1107 Bae J. W., 774 Cai J., 1669 Chung S.-K., 834 Baek C. H., 1335 Cai Q., 195] Chung U-I., 377 Baek M. K., 1107 Caillat C., 1767 Chung Y. H., 37 Bagnall D. M., 529, 1556 Calvetti E., 567 Ciechonski R. R., 1917 Baik H. K., 205, 838 Campabadal F., 1536 Claeys C.,-702, 1274, 1536 Baine P., 1461 Campera A., 1745 Clavelier L., 1090 Bakeroot B., 363 Candelier P., 1759 Claverie A., 1198, 1734 Baks W., 1849 Capezzuto P., 413 Coffin H., 1198, 173 Balmer R. S., 279 Carceller J. E., 1454 Colalongo L., 567 Balucani M., 1251] Carrada M., 1734 Collaert N., 673, 763, 1488 Bandhawakar G., 628 Casao Pérez J. A., 612 Colombeau B., 618, 1168 Banerjee M., 1282 Celi D., 1623 Combe M., 1867 Banerjee S. K., 860, 1248 Cerdeira A., 1009 Conoci S., 1820 Banoushi A., 871] Chakrabarti P., 1396 Cooper Jr. J. A., 351 Bardou N., 1655 Chan A. C. K., 554 Coppens P., 1370 Bardwell J. A., 802 Chan H. Y., 1241 Cordier C., 1376 Barraud S., 1090 Chan K. K., 1669 Cortes I., 965 Barufla M., 674 Chan L., 1241 Cova P., 183 Bassim N. D., 251 Chan M., 554, 1405, 1933 Cowern N., 618 Basu S., 1158 Chang K.-M., 1381 Cowern N. E. B., 1168 Bawedin M., 1547 Chang K. M., 1722 Crespo A., 670 Bayhan H., 991 Chang P. C., 459, 1347 , 1708 Cressler J. D., 329, 986 Behnam A., 1341 Chang S.-C., 437, 1937 Cristiano F., 1168 Belford R. E., 986 Chang S. J., 459, 1077, 13 47 Cristoloveanu S., 1522, 1547 Belhaj M., 956 Chen B., 853 Crouse D., 1697 Belleville M., 1466 Chen C., 459 Crupi G., 928 Ben Assayag G., 1198, 1734 Chen C. H., 459, 1347 Cui J., 1044 doi:10.1016/S0038-1101(05)00336-9 IV Author Index Cui T., 445, 853, 884 Farella I., 413 Guerrieri R., 674 Cui Z., 505, 1702 Fathi E., 1341 Guhel Y., 1589 Feldman I., 1662 Guichaoua J., 1867 Dabiran A., 1662 Ferguson I. T., 1986 Guillot G., 1112 Daga J.-M., 1867 Ferrante G., 915 Guo Y., 1961 Dakhel A. A., 562, 1996 Ferrari A., 125] Gupta G., 1396 d’Alessandro V., 1098 Ferrarini V., 674 Gupta M., 167, 301, 1206 Dalla Betta G.-F., 175 Ferraton S., 1497 Gupta R., 167, 1206 Damlencourt J. F., 1833 Fiegna C., 727 Gupta R. S., 167, 301, 558, 1206, 1639 Das M. K., 1017, 1228 Fields C., 981 Gurbuz Y., 1055 Das N. C., 1422 Fitch R., 670 Guy O. J., 1081 Davenport B., 1978 Flandre D., 708, 1185, 1488, 1547, 1569, 1683 Davidson J. L., 1055 Flatresse P., 1466 Haffouz S., 802 Dawei Z., 1581 Flores D., 77, 965, 1309 Haibach P., 618 De Gezelle V., 1947 Flynn J. S., 1330 Haldar S., 558, 1206 De Jaeger J. C., 535 Fobelets K., 591 Hall S., 1556 De la Torre J., 1112 Forment S., 606, 878 Hallgren R., 1978 De Meyer K., 673, 763, 1488 Forster A., 245 Hamilton J., 1722 De Nisi F., 175 Fossum J. G., 595 Hamilton P., 1978 de Souza M., 1683 Fournier J. M., 1466 Han J., 63 Degraeve R., 695 Fraboulet D., 1767 Han J. H., 1857 Dehaene W., 1776 Fregonese S., 1623 Han P., 199 Dehan M., 67 Fu Y., 1693 Han R., 1942 Del Canizo C., 49 Fujihira K., 896 Han Z., 145 Deleonibus S., 529, 1833 Fukeda K., 818 Hao Z., 1581 Deleruyelle D., 1728 Furuya M., 1233 Harame D. L., 329 Delos E., 1589 Hariharan G., 1604 Deng Y. Z., 199 Galdin-Retailleau S., 1320 Hashemi P., 1341 Denison M., 421 Gamble H. S., 1461 Hashiguchi S., 865 DeSalvo B., 1728 Gamiz F., 1504 Haspeslagh L., 1862 Despotopoulos S., 591 Gamiz F.; 1453, 1516 Hassoune I., 1185 Dey S., 227, 1248 Gangopadhyay U., 1282 Hastas N. A., 513 Dimitrakis P., 1734 Gaquiere C., 1589 Haugerud B. M., 986 Dimitriadis C. A., 513 Garcia Sanchez F. J., 465, 640 Hazra S. K., 1158 Dixit A., 763, 1488 Garrido B., 1112 He Y., 57, 63 Djezzar B., 1617 Gartsman K., 1662 Heijmen T., 1783 Do Q. T., 1986 Gasquet H. P., 1722 Hellstr6m P.-E., 907 Dobrovolsky V. N., 1251 Gaudissart A., 1185 Hemment P. L. F., 529 Dogan S., 1693 Geens P., 1776 Henry R. L., 251 Dokholyan J. G., 634 Gehring A., 1510 Hidalgo S., 77, 965, 1309 Dollfus P., 1320 Gelmont B., 257 Hilton K. P., 279 Donato N., 928 Gely M., 1728, 1833 Hiramoto T., 997 Dorda U., 1799 Gerard H., 535 Hoffman R. L., 648 Dormans D., 1849 Germain M., 1589 Hofmann F., 716, 1799 Doutreloigne J., 363, 1943 Gerritsen E., 1713, 1767 Holm R. H., 251 Dreeskornfeld L., 1799 Ghannouchi F. M., 1909 Hong H.-G., 1986 Drummond A., 1185 Ghetti A., 1805 Horing N. J. M., 1049 Du G., 1942 Ghibaudo G., 721, 1833 Horsfall A. B., 453 Duan B., 1965 Ghosh D., 1649 Hossain T., 774 Ducatteau D., 1589 Giacomini R., 1255 Hossein-Zadeh M., 1428 Dutta S. K., 1282 Gilbert N. E., 1813 Hou C.-C., 1905 Gildenblat G., 267 Houdt J. V., 1862 Eddy Jr. C. R., 251 Giles L. F., 618 Houng M.-P., 213 Edwards A., 251 Gillespie J., 670 Hradsky B., 1722, 1754 Egawa T., 1632 Godoy A., 1504 Hsin Y. M., 295 Eimitsu M., 818 Goghero D., 369 Hsing I.-M., 1933 Ekpunobi A. J., 667 Goldsman N., 145, 1127 Hsu E. M., 802 Elattari B., 1370 Gombia E., 183 Hsu H. T., 295 El-Ghamaz N. A., 1314 Gomez-Campos F. M., 1454 Hsu R.-T., 163 Elkhou M., 535 Gong J., 459 Hsu W.-C., 163 El-Nahass M. M., 1314 Gonzo L., 175 Hu G. X., 1387 El Nokali M., 1341 Gopalan C., 1813 Hu Z., 1956 Eminente S., 727 Gorev N. B., 343 Hu Z. F., 847 Emonet N., 1767 Gornik E., 421 Huang C.-H., 1599 Enz C., 485 Goullet A., 369 Huang C.-L., 219, 1921 Ernst T., 529, 721, 1090 Govoreanu B., 695, 1841 Huang C.-Y., 1925 Esame O., 1055 Grandchamp B., 956 Huang F. Y., 473 Esseni D., 727, 1529 Grekhov I. V., 1192 Huang R., 479 Estrada M., 1009 Grieb M., 716 Huang Y., 940 Kau Evans A. G. R., 529 Grisolia J., 1198 Hull B. A., 1228 Kave Exshaw O., 1477 Groeseneken G., 695, 1370 Hung H., 1347 Kaw Groos G., 421 Hwu J.-G., 1599 Kech Fang J., 1135 Grundmann M., 1446 K hai Farcy A., 1477 Gu S. L., 199 lafelice B., 674 Khor Fardi H. Z., 663 Gu X., 1693 Iannaccone G., 1745 K huc Author Index lelmini D., 1826 Khudaverdyan D. S., 634 Lee H. Y., 459 Igic P., 1081 Khudaverdyan S. Kh., 634 Lee J.-H., 377, 524 Igic P. M., 1217 Khvedelidze L., 343 Lee K., 1107 Imaizumi M., 896 Kilchytska V., 708, 1488 Lee K.-W., 213 Ingvarson F., 275 Kim B., 1576 Lee S. f.,.139/ Iniguez B., 1683 Kim C., i857 Lee 3.-J., 205 Iniguez B., 965, 1009 Kim C.-D., 1107 Lee S.-K., 1297 loffe V. M., 385 Kim D. S., 1674 Lee S.-W., 1107 Ion Lepsa M., 245 Kim D.-Y., 524 Lee S. W., 1674 Jonica I., 1497 Kim J. H., 795, 1857 Lee T., 1982 Ishikawa H., 1632 Kim J.-H., 19 Lee W.-K., 554, 1405 Issaoun A., 1909 Kim K. C., 1674 Legat J. D., 1185 Ivanov P. A., 233, 1228, 2011 Kim K.-Y., 239 Leonardi A., 674 Iwai H., 825, 1522 Kim M. D., 1674 Leroy W. P., 878 Kim S.-D., 131 Letertre F., 1522 Jacob B., 1002 Kim S.-H., 595 Levacq D., 708, 1185 Jain F. C., 2002 Kim S.-I., 497 Levi A. F. J., 1428 Jaksic A. B., 1140 Kim S.-J., 1153 Levinshtein M. E., 233, 1228. 2011 Jang K. Y., 1674 Kim T. G., 1674 Lew K. K., 227 Jankovic N., 1086 Kim W.-B., 19 Li B., 25, 1956 Janssens E., 747 Kim Y., 825 Li B.-Z., 606 Jennings M. R., 1081 Kim Y. T., 497 LC, Jennison M. J., 1708 Kimukin I., 117 Li J., 1933 Jensen N., 421 Kirsten D., 1484 Li J. M., 1387 Jeong S. M., 205, 838 Kiru V., | Li J. P., 1387 Jeppson K. O., 275 Klemenc M., 1002 Li M., 1956 Jerisian R., 1617 Kloes A., 85 Li P., 2002 Jessen G., 670 Knoch J., 73 Li R., 1974 Jhou Y. D., 1347 Kocharyan A. A., 634 Li W., 1956 Jiang J., 1951 Kodzhespirova I. F., 343 Li X., 1900 Jiang N., 473 Koga J., 684 Li Z., 1965 Jiang R. L., 199 Koh J. H., 1674 Liang G., 884 Jiang Y.-L., 606 Kolendo A., 585 Liang J. W., 847 Jiao G., 1387 Komiya K., 1118 Liang Q., 329 Jiménez D., 965 Kommiling R., 1799 Lien C., 808 Jimenez-Tejada J. A., 1454 Kong Y. C., 199 Ligonzo T., 413 Jin H. M., 1241 Koo W. H., 205, 838 Lijadi M., 1655 Jin M., 1461 Koolivand Y., 1262 Lilin T., 1581 Jin Z., 409 Kosina H., 1510 Lim K. M., 1107 Jindal R. P., 976 Koteeswara Reddy N., 902 Lim T. C., 1034 Jit S., 141, 628 Kouki A. B., 1909 Lin C. H., 1708 50S. J., 205 Kovacs-Vajna Zs. M., 567 tm. L., 37 John V. S., 3 Kozicki M. N., 1813 Lin C.-K., 145 Johnson C. M., 453 Kretz J., 1799 Lin L. M., 1223 Jordan-Sweet J. L., 1669 Krishna D., 1604 Lin S.-H., 1921 Joseph A. J., 986 Kristiansson S., .275 Lin T. K., 1077 Joshi S., 1248 Krithivasan R., 986 Lin Y.-S., 163 Jourdan N., 1767 Krivutsa V. A., 1228 Linton D., 1461 Jung S.-P., 1986 Krummenacher F., 485 Liot V., 1466 Jung Y.-S., 1107 Kruppa W., 1875 Liou B.-W., 437, 1937 Kruseman B., 1783 Liou J. J., 505, 1702 Kagganti S. P., 275 Kudoh T., 2006 Lipponen V., 1714 Kalra P., 1396 Kumar A., 141, 997 iw es. ¥., 25 Kamaev G. N., 9 Kumar Gupta S., 141 Liu C., 1693 Kamarinos G., 513 Kumar Aggarwal S., 167 Liu C. H., 1077 Kang B. K., 1335 Kwok P. C. K., 25 Liu C.-K., 1172 Kang H., 1107, 1982 Kwon Y. S., 497 Liu F.-Q., 1961 Kang I.-H., 19 Liu J., 63, 1044, 1974 Kang J., 1942 Labat N., 956 Liu J.-Q., 1961 Kang W. P., 1055 Lacaita A. L., 1826 Liu X., 1942 Kang Y., 1135 Lafond D., 1728 Liu Y., 445, 853 Kapoor A., 976 Lago-Aurrekoetxea R., 49 Liu Z. S., 847 Kar G. S., 449 Lai P. T., 25, 1223 Lloyd N. S., 529 Karata$ $., 1052 Lalitha S., 813 Lo H. B., 1223 Kardan M. R., 871 Lallement C., 485 Lopatiuk O., 1662 Kartaloglu T., 117 Lampin E., 1168 Lorenzini M., 1862 Kasturi P., 1639 Landesman J. P., 369 Lorke A., 1990 Kasuga M., 1233 Landgraf E., 716 Losurdo M., 413 Kauerauf T., 695 Le Coz Y. L., 1604 Lu C.-Y., 351 Kavak H., 578 Lederer D., 491, 1488 Lu H.-T., 1595 Kawase K., 896 Ledezma J. C., 1722 Lu J., 193, 1044 Kechiyantz A. M., 634 Lee C. T., 459 Lu W., 1330 Khairurrijal, 923 Lee D.-H., 377 Lu X.-Z., 1961 Khoroshilov K. Yu., 9 Lee H.-C., 1172 Lu Y., 986 Khuchua N., 343 Lee H. P., 1986 Lucci L., 1529 Vi Author Index Lun Ng A. F., 1405 Nagumo T., 997 Pesic T., 1086 Liith H., 245 Nakahara S., 684 Petit C., 1002 Luque A., 49 Nakamori Y., 1118 Petralia S., 1820 Luyken R. J., 716 Nayeem M. B., 986 Petranovic D. M., 1604 Ndagijimana F., 1477 Philip Wong H.-S., 755 Maes H., 695 Nener B. D., 1969 Piazza M., 1767 Magno R., 1875 Neuilly F., 1849 Pichon L., 1376 Mahajan A., 945 Neumann S., 409 Pirovano A., 1820, 1826 Mahalingam T., 3 Ng A. F. L., 1405 Pogany D., 421 Mahapatra R., 449, 524 Ng K. K., 790 Poncet A., 1112 Mahata C. R., 1649 Nicotra G., 1833 Pool F. S., 1978 Maikap S., 449, 524 Nishiyama A., 155 Popov V. V., 1049 Maity T., 1649 Niu G., 329 Portesine M., 183 Majumdar D., 1282 Niu J., 1956 Prégaldiny F., 485 Makimura T., 1352 No Y. S., 524 Principato F., 915 C£GtCTT&frOAh6AAACROmO e!KhaAK Kmm Malinge P., 1759 Nokali M. E., 1262 Prinz E. J., 1722, 1754 Malm B. G., 907 Noor F. A., 923 Privalov E. N., 343 Malmstrém J., 1410 Normand P., 1734 Prost W., 409 Manaresi N., 674 Nuernbergk D., 1484 Prunnila M., 1504, 1516 Mandelis A., 769 Numata T., 684 Puigdollers J., 1009 Maneux C., 956, 1623 Pulfrey D. L., 1969 Mangla T., 301 Ont: KR: 1335 Mantegazza D., 1826 Ohmi S.-i., 825 Qian M. R., 323 Mantl S., 73 Ohtou T., 997 Qu X.-P., 606 Maple M., 1708 Ohtsuka K.-i., 896 Mariani R., 1791 Olafsson H. O., 545 Rabago F., 769 Marsal L. F., 1009 Olsson J., 907, 1410 Racape E., 1867 Martin F., 1833 Olver K., 1422 Rafi J. M., 1536 Martin T., 279 Omura Y., 1118 Rajagopal Reddy V., 1213 Martino J. A., 109, 1255, 1274, 1569 O’Neill A. G., 453 Rajavel R., 981 Masson P., 1713, 1759 Ono M., 155 Ramakrishna Reddy K. T., 902 Mastro M. A., 251 Opsomer K., 878 Ramesha Reddy N., 1213 Matsui T., 865 Ortiz C. J., 1168 Ranica R., 1759 Mawby P. A., 1081 Ortiz-Conde A., 465, 640 Rao R., 1754 Mayer T. S., 227 Oshita F. K., 1708 Rao R. A., 1722 Mazarredo I., 1309 Osinsky A., 1662 Raskin J.-P., 67, 491, 1488, 1569 Mazhari B., 311 Osipov A. V., 1251 Ray S. K., 449, 524 Mazoyer P., 1713, 1759, 1767 Osiyuk I. N., 545 Raynaud C., 1477 Mazuré C., 1522 Osman K., 529 Rebollo J., 77, 965, 1309 Medoro G., 674 Ostling M., 193, 907 Redwing J. M., 227 Meindl J. D., 271 Oussalah S., 1617 Reggiani L., 405 Menon N., 1396 Ozbay E., 117 Register L. F., 860 Menozzi R., 183 Ozeki and T., 896 Reisinger H.. 716 Mercha A., 702, 1536 Ozgiir U., 1693 Reklaitis A., 405 Metze G., 1127 Reseéndiz L., 1009 Meuris P., 747 Paillard V., 1734 Richard O., 1477 Michaud J. F., 1376 Pal B. B., 628 Richter S., 1484 Michelakis K., 591 Pal S., 524 Rim K., 1669 Minakata H., 137 Palestri P., 727, 1529 Rinkenberger G., 1722 Miranda A. H., 1849 Pallares J., 1009 Risch L., 716, 1799 Missous M., 279 Palmour J. W., 233, 1228, 2011 Ristic G. S., 1140 Mitrovic I. Z., 1556 Pancheri L., 175 Robertson J., 283 Mitsumori A., 1233 Pandey P., 141 Rodin P., 421 Mizuno T., 684 Pantisano L., 702 Rodriguez-Bolivar S., 1454 Mnatsakanov T. T., 2011 Papaix C., 1867 Rodriguez A., 2002 Moens P., 363, 1370 Papavassiliou C., 591 Roenker K. P., 1292 Mohammed F., 1461 Pardo F., 1655 Roig J., 77, 965, 1309 Mohney S. E., 227 Parish G., 1969 Rolfe S., 802 Molas G., 1728 Park C.-M., 131 Romani A., 674 Moizer W., 618 Park H.-D., 1297 Romanjek K., 721 Montes L., 1497 Park I., 31 Rooyackers R., 763 Montanari S., 245 Park J., 1107 Roozeboom F., 618 Moon G. W., 1674 Park J. H., 497 Rosner W., 716, 1799 Son; Moon J. T., 377 Park J. I., 1674 Rousseau M., 535 Son; Moon J.-W., 834 Park T.-S., 377 Roy A., 485 Sons Moon Y., 1693 Parker L., 1127 Roy G., 740 Sons Mooney P. M., 1669 Parkhurst R., 1708 Roy S., 740 Soni Morante J. R., 1112 Pavanello M. A., 1274, 1569, 1683 Royter Y., 981 Sotg Moriguchi K., 1118 Pavelka J., 865 Ru G.-P., 606 Soul Morkog H., 1693 Pavlidis D., 1352 Ruan J., 1044 Spec Mosca R., 183 Pejcinovic B., 1414 Rudenko T., 1488 Spet: Muci J., 640 Pejovic M. M., 1140 Rudenko T. E., 545 Spiri Mueller K., 1414 Pellizzer F., 1826 Srini Miller T., 1990 Pelouard J.-L., 1655 Sadd M., 1722, 1754 Srini Muralidhar R., 1722, 1754 Peschke J., 1722 Saha H., 1282 Stade Author Index Vil Sakota T., 137 Starke T. K. H., 1217 Uneus L., 1297 Sallese J.-M., 485 Stecher M., 421 Unlu M. S., 117 Salvo B. D., 1833 Steimle R. F., 1722, 1754 Uren M. J., 279 Saminadayar L., 1497 Stoppa D., 175 Urresti J., 77, 1309 Sampathkumaran R., 1292 Strathman S. D., 1708 Sampedro C., 1504 Straub S., 1722, 1754 Sangiorgi E., 727 Stuchinsky V. A., 9 Vainonen-Ahlgren E., 193 Sannuti P., 1900 Su Q., 1044 Valizadeh P., 1352 Sathyamoorthy R., 813 Su S.-H., 1905 Van Calster A., 1947 Saxena M., 1639 Su Y. K., 37, 459, 1347 Van den bosch G., 1370 Scandiuzzo M., 175 Subbarayan A., 813 van Duuren M., 1849 Schaefer H., 618 Sugiyama N., 684 Van Houdt J., 1841 Schamm S., 1734 Suh E.-K., 1297 Van Meirhaeghe R. L., 606, 878 Schiavulli L., 413 Sukirno, 923 van Schaijk R., 1849 Schoenmaker W., 747 Sulima P. Y., 1623 Vancaillie L., 708 Schroder D. K., 654 Sun W., 1896 Varahramyan K., 853, 884 Schuh D., 1990 Sun X., 399, 1956 Vassilevski K. V., 453 Schulz T., 716 Sun Z., 1896 Velampati R., 2002 Schwierz F., 889 Suzuki K., 137 Vellas N., 1589 Seegebrecht P., 779 Sveinbjérnsson E. O., 545 Veloso A., 763 Sehgal A., 301 Sverdlov V., 1510 Vendrame L., 1805 Selberherr S., 1510 Swift C. T., 1722, 1754 Verschaeve M., 747 Selmi L., 727, 1529 Syvajarvi M., 1917 Vexler M. I., 1192 Senthilarasu S., 813 Sze P.-W., 213 Via G., 670 Sentiirk E., 935 Szmidt J., 585 Vihmalo J.-P., 1714 Seong T.-Y., 1986 Vilches A., 591 Sertap Kavasoglu A., 991 Tacano M., 865 Villaret A., 1759 Shalchian M., 1198 Takagi K., 1449 von Haartman M., 907 Shanks H., 578 Takagi S.-1., 684 Vos J. D., 1862 Shao X., 1435 Takami T., 896 Voz C., 1009 Shen B., 199 Tamura Y., 137 Vulto P., 674 Shen D., 43 Tan C., 57 Shen G., 2016 Tanimura J., 896 Shen X. M., 847 Tang H., 802 Wahab Q., 1917 Sheng K., 1900 Tang J. J., 1405 Waite A. M., 529 - Shi B., 981 Tang W. B., 295 Wang C. H., 459 Shi L., 1896 Tanuma N., 865 Wang C. M., 1387 Shi W., 1044 Tartagni M., 674 Wang D. Z., 323 Shi X., 1179 Tarui Y., 896 Wang H. C., 37 Shi Y., 63, 199 Tassis D. H., 513 Wang J. X., 1387 Shigekawa N., 1352 Tay K.-W., 219 Wang L., 271, 1044 Shih C.-H., 808 Taylor S., 329 Wang S. M., 1347 Shim S. I., 497 Tegude F. J., 1990 Wang S.-J., 437, 1933 Shiojima K., 1352 Tegude F.-J., 409 Wang X. L., 1387 Shiramizu T., 896 Tekin I., 1055 Wang Y., 97, 227, 479, 529, 1029, 1933 Shu X., 2016 Tello P. G., 1849 Wang Y.-H., 213 Shulekin A. F., 1192 Teperik T. V., 1049 Wang Z.-G., 1961 Shur M. S., 343 Terada K., 818 Watling J. R., 733 Sialelli V., 1867 Tezuka T., 684 Webb J. B., 802 Sijercic E., 1414 Thomas III S., 981 Wee D., 1969 Sikula J., 865 Tian Z., 2016 Wegscheider W., 1990 Simoen E., 702, 1274, 1536 Tikhonov R. D., 1302 Wei J., 1708 Simoni A., 175 Tinella C., 1477 Wells A. M., 279 Sj6blom G., 1410 Tobias I., 49 Werbowy A., 585 Skotnicki T., 1759 Tois E., 193 Westlinder J., 907, 1410 Skromme B. J., 945 Torres J., 1477 White B. E., 1754 Slotboom M., 1849 Touboul A., 956 White M. H., 97, 1017 Smith S., 1767 Toumazou C., 59] White Jr. B. E., 1722 Sochacki M., 585 Towner F., 1422 Wiatr M., 779 Sokolich M., 981 Triantafyllou A., 1477 Wilhelmi C., 1708 Solomon R., 1697 Tsai J.-H., 357 Wilk G. D., 790 Song J., 1330 Tseng H. C., 1071 Wilks S. P., 1081 Song J.-I., 19 Tsou C.-C., 1595 Witzigmann B., 1002 Song J.-O., 1986 Tsutsui G., 997 Wohlmuth W. A., 1978 Song K. M., 205 Tsutsui K., 825 Wong H., 505 Song Z., 43 Tuominen M., 193 Wong M., 1179 Sonnenberg V., 109 Turin V. O., 1678 Woo J.C. S., 131 Sotgiu R., 1820 Turudic A., 1978 Woolard D., 257 Souifi A., 1112 Tet F., 197 Wright N. G., 453 Specht M., 716, 1799 Twigg M. E., 251 Wu C.-S., 1391 Spetz A. L., 1297 Tyaginov S. E., 1192 Wu D., 193, 907 Spirito P., 1098 Tyagulski I. P., 545 Wu L., 219 Srinivasaiah-H. C., 431 Wu X., 1029 Srinivasan M. P., 1241 Uang K.-M., 437, 1937 Wu Y.-H., 163 Stadele M., 1799 Uchida K., 684 Wu Z. H., 25 Vill Author Index Xia T.-S., 860 Yoo J. S., 1107 Zhang R., 199 Xia Y., 1044 Yoo J.-S., 1107 Zhang S.-L., 193 Xia Z., 1942 Yoon E., 377 Zhang W., 257, 529 Xie Y., 1029 Yoon J.-M., 1107 Zhang X., 479 Xu C., 1933, 2016 Young E., 702 Zhang Y., 517 Xu M., 57 TH <4..,. 9487 Zhang Z., 1956 Au ¥., 1155 Yu C. L., 459, 1347 Zhao D., 1135, 1974 Yu W., 399 Zhao D. G., 847 hs Yakimova R., 1917 Yu Y., 43 Zhao H., 1029 Yamaguchi M., 137 Yu Z., 1435 Zhao J. H., 1900 Yan F., 1900 Yuan 8. C., 123 Zheng X. R., 25 Yang B., 790 Yue Y., 505 Zheng Y. D., 199 Yang B. L., 1223 Yun J. G., 1547 Zhiping Y., 1581 Yang H., 847 Yurkov S. N., 2011 Zhou C. H., 199 Yang L., 517, 1029 Zhou S., 1951 Yang W., 43 Zahabi A., 1262 Zhu C., 63, 986 Yang Y. Y., 1669 Zayko Yu. N., 1049 Zhu K.-P., 357 Yano K., 1233 Zeng Y. A., 1017 Zhu M., 853, 884 Yarlagadda B., 2002 Zeng Y. P., 1387 Zhu S., 606 Yater J. A., 1722, 1754 Zeyada H. M., 1314 Zhu Y., 1974 Ye P..D., Zhang B., 1965 Zimmer T., 1623 Yokoyama M., 1595, 1905 Zhang F., 399 Zimmermann J., 1497 °aeeeeaeak ase gee y Blac Bod Bod Bon BPS Brez Bre< Bre Bulk Bulk Bulk doi:] KEYWORD INDEX A. Confinement energy, 940 Buried p-layer, 1206 Decanano-scaled MOSFETs, 1581 A. Oxidized porous silicon, 940 Buried silicide layers, 1556 Deep level, 1135 Absorption, 1112 Deep trench, 1623 Ac conductivity, 1163 Calcining temperature, 1029 Deep trench isolation, 1370 Accumulation, 779 Capacitance, 1118 Defect, 1674 Additional electric field modulation, 1965 Capacitance modeling, 976 Defects, 283 Adjustable dynamic range, 1933 Capacitance-frequency characteristics, 1135 2DEG, 459, 612 ADSL line-driver, 1947 Capacitor, 1767 Delayed breakdown diode, 399 AFM lithography, 1497 Carbon doping, 802 Density of interface states, 1917 Air-gap, 558 Carbon nanotubes, 73 Dependability, 1791 Al composition, 1352 Carrier density, 834 Design, 1466 Al drive-in, 49 Carrier mobility, 889 Detectors, 1049 Al,O3, 907 Carrier velocity, 155 Device modeling, 663, 889, 1071, 1683 ALD, 1767 Cascode, 329 Device simulation, 1233, 1510, 1990 AlGaAs, 1674 Cathodoluminescence, 1662 Device temperature, 1632 AlGaAs barrier, 245 CaTiO3-Nd(Mgj/2T1;/2)O3, 1921 DG MOSFET, 595 AlGaInP, 37 CdTe, 991 Diamond, 1055 AlGaN, 117, 279, 1330 CET, 524 Diamond films, 1044 AlGaN/GaN, 612, 670, 1589 Channel mobility, 896, 1900 DIBL, 141, 377, 1274 AlGaN/GaN HEMTs, 1632 Channel potential, 1754 Dielectric, 1767 Alpha-particles, 1783 Channelling, 1241 Dielectric constant, 935 Amorphous silicon, 578 Characterization, 193, 1361, 1639 Dielectric dispersion, 1649 Amplitude noise, 1449 Charge loss, 97 Dielectric phenomena, 562, 1996 Analog applications, 708 Charge trapping in Al,O3;, 716 Dielectric properties, 1163, 1921 Analog circuits, 1569 Charge trapping memory, 1799 Diffuse phase transition, 935 Analog simulation, 1683 , Chemical co-precipitation, 1029 Diffusion length, 1662 Analogue, 1488 Chemical vapour deposition (CVD), 1055 Digital, 1466 Analogue electronics, 591 CIGS, 991 Direct tunneling time, 923 Analytical capacitance model, 1262 Circuit modeling, 871 Discretized energy levels, 860 Analytical model, 43, 311, 567 Circuit simulation, 175, 567 DLTS, 1674 Analytical modeling, 301 CMIS inverters, 155 DMOS, 1098 Analytical models, 1309 CMOS, 175, 986, 1198 Dopant diffusion, 618 Antimonide, 1875 CMOS compatible, 1933 Doping concentration, 109 Aspect ratio, 834 CMOS standard process, 1172 Doping gradient, 1034 Asynchronous amplifiers, 1947 0.lum CMOS technology, 431 Double gate, 485 ATLAS software, 1639 Code in place execution (XIP), 1867 Double-gate devices, 965 Atomic layer deposition, 790, 1767 Cole—Cole diagrams, 935 Double gate MOSFET, 1569 Atomic layer deposition (ALD), 193 Colour stability, 1956 Double-gate MOSFET, 271, 1510 Atomistic, 733 Compact modeling, 85, 1405 Double gate silicon-on-insulator (DGSOI), Auger recombination, 1414 Complex band structure, 860 1034 Avalanche breakdown phenomenon, 535 Concentration—recombination mechanism, Double gate SOI, 1504 Avalanche-noise, 405 1302 Double-quantum-well, 1049 Avalanche photodiode, 871 Conductance switching memories, 1820 3D physical simulation, 1623 Avalanche photodiodes, 1697 Conducting probe-AFM, 878 2D-QM effects, 1581 Avalanche transistor, 421 Conduction, 825. Drain current, 167, 301 Confinement effect, 357 Drain current model, 640 Backpropagation neural network, 1576 Contact resistance, 774 Drain current transients, 1536 Back surface field, 49 Contact resistivity, 227 Drain-induced-barrier-lowering (DIBL) effect, Ballistic, 1090, 1435 Contact test structure, 1617 479 Ballistic double-gate MOSFETs, 1951 Continuous model, 1683 DRAM, 1759, 1767 Ballistic transport, 684 Coplanar waveguide, 491 Drift-diffusion, 733 Bandwidth-efficiency, 117 Correlated mobility fluctuations, 907 Drift—diffusion simulation, 1414 Barrier height, 695 Correlated noise model, 654 3-D simulation, 1435 Barrier height inhomogeneity, 606 Correlation, 1449 3D Simulation, 1805 Barrier height lowering, 654 Coulomb blockade, 1198, 1497 Dual-channel, 167 Biaxial, 986 Coulomb scattering, 907 dV/dt effect, 2011 Bilayer, 311 Critical charges, 1783 Dynamic voltage control, 1776 Binary collision approximation, 1241 Cross-spectrum, 1361 Dysprosium—manganese oxide, 1996 Bipolar junction transistor, 663 Cross-talk, 1461 128-bit data, 1867 Cryogenic temperatures, 928 E. Photoluminescence, 940 BJT, 554 Cu doping, 3 Early voltage, 1488 Black body emissivity, 1422 Current collapse, 279 E-beam, 825 Body factor and subthreshold factor, 997 Current-blocking, 37 EBIC, 1662 Body-tied, 377 Cut-off frequency, 167, 301, 1488, 1951 Edge termination, 437, 945 Bonded SOI wafers, 1556 C-V, 813 E/D-HEMT, 19 BPSOI, 1965 C—V characteristic, 1262 EEPROM, 1484 Breakdown, 1081, 1925, 2002 CYTOP'™, 1708 EEPROM cell model, 1484 Breakdown field, 790 Effective-doping concentration, 808 Breakdown voltage, 43, 437, 1370, 1632, 1965 D. Normal distribution, 940 Effective mobility, 1320, 1942 Bulk, 377 DC, 567 Effective resistivity, 491 Bulk traps, 1599 DC current gain, 663 . EKV, 485 Bulk-Si MOSFET, 595 DCFL inverter, 628 Electric field, 1081 doi:10.1016/S0038-1101(05)00337-0 X Keyword Index Electric field effects, 1978 Frequency, 853 High-K materials, 1849 Electrical and structural properties, 1213 Frequency dispersion, 915 High-K oxide, 283 Electrical characterization, 9, 109 Frequency multiplication, 385 High-frequency characterization, 1477 Electrical modelling, 1623 Frequency response, 554, 871 High-frequency effects, 747 Electrical overstress, 1925 Fringe-induced barrier lowering (FIBL), 271 High-power laser, 1674 Electrical properties, 902, 1044 Fringing capacitance, 301 High-speed, 1867 Electrical traps, 1589 FT-IR technique, 1163 High-temperature, 1484 Electrode, 1767 Full-chip heating, 1127 High-temperature operation, 1228 Electroluminescence, 1693 Full depletion, 779 High-voltage CMOS integrated circuits, 1947 Electromagnetic interferences, 1477 Fully depleted, 1262, 1547 High-voltage termination, 945 ieaael ee Electron-beam evaporation, 2016 Fully depleted devices, 1034 Hole, 1454 Electron beam irradiation, 1163 Hole-blocking, 1595 Electron effective saturation velocity, 295 GaAs, 245, 413, 878, 1077 Hooge noise parameter, 865 Electron high-field mobility, 1678 GaAs epitaxial structure, 343 Hot carrier injection, 1370 Electron mobility, 889 GaAs MESFET, 790 Hot-carrier degradation, 1536 Electron transport, 1516 GaAsSp 5;Sbo.49 material, 956 Hot-carrier stress, 1702 Electronic properties, 283 Gadolinium—Indium oxide, 562 Hot Holes erase, 1862 Electronic transport, 73 Gallium compounds, 1978 4H-SiC, 945, 1081 Electrostatic discharge, 1309 Gallium nitride, 889, 1678, 1693 4H-SiC, 2002 Electro-static discharge, 1925 GaN, 251, 279, 405, 413, 459, 670, 774, 802, 4H-SiC MESFET, 1206 Electrothermal, 1925 847, 865, 1135, 1330, 1347, 1381, 1387 Hydrodynamic modelling, 535 Electrothermal excitation, 63 Gas sensor, 1297 Hysteresis, 1547 Ellipsoidal valley, 31 Gas sensors, 1330 Hysteresis-like breakdown, 1599 Embedded flash memory (e-flash), 1867 Gas-sensing properties, 1029 Embedded memories, 1759 Gate coupling, 1805 IC-interconnect modeling, 1604 Emerging non-volatile memories, 1820 Gate current, 505 Ideality factor, 1158, 1335, 1446 E-MESFET, 628 Gate dielectric, 213, 695 IGBT, 123 Enhancement mode, 453 Gate interference, 1805 Illumination, 1599 E-PHEMT, 1708 Gate leakage current, 19, 57 Impact ionization, 421 Equivalent-circuit parameters, 1071 Gate size vs. non-uniformity length, 1192 IMPATT, 405 Erase, 1745 Gate turn-off thyristor, 233, 2011 Impulse response, 1604 Erasing, 1974 Gate voltage-dependent mobility, 648 4-in. sapphire, 1632 Error detection and correction codes, 1791 Gate workfunction, 1034 4-in. Si, 1632 ESD, 1153 Gate—drain charge, 965 In-plane gates, 1990 ESD phenomena, 421 Gate-induced floating body effect (GIFBE), In.Ga,_,N/InN heterostructure, 199 Etch-stop, 497 1536 Ing ;}Gap oN, 1381 Excited states, 1112 GCS approach, 1581 InAlAs/InGaAs heterostructure, 163 Extended defects, 1168 Genetic algorithm, 1576 InAlAs/InGaAs/InAlAs heterojuction, 167 Extrinsic illumination, 343 Germanium, 1090, 1942 InAs, 1875 Germanium-on-insulator, 1090 Indium—tin-oxide (ITO), 1381 Facet, 2016 Gettering, 49 Infrared camera, 1632 Fault tolerance, 1791 Graded channel, 1569 InGaAs/InP, 1002 FD, 1262 Graded-channel SO] MOSFET, 1683 InGaN, 1347 FD-SOI, 1454 Graded gap injector, 245 InGaN/GaN, 1153, 1905 FD/SOI MOSFET, 595 Group-IV photonics, 1172 InGaP/GaAs/InGaAs, 357 Ferroelectric, 497 Growth direction, 31 Ink-Jet Printing, 853 Ferroelectric memory, 497 Gunn diode, 245 InP, 981 FET, 802, 1049 InP based HEMT, 163, 167 Feynman sum-over-paths, 1604 H>3, 1330 Input third-order intercept point (IIP3), 329 Field effect, 1497 Hall factor, 31 InSb, 1414 Field effect transistors, 279 HBT, 295, 956, 981, 1361, 1396, 1875, 1909 Insulating films, 562, 1996 Field-effect transistor, 73, 497 Heat generation, 77 Integrated antennas, 1477 Film—substrate interface, 343 HEMT, 1387, 1875 Integrated circuit, 445 Filter, 853 Heterojunction bipolar transistor, 251, 295, Integrated optoelectronics, 1697 Fin width, 763 357, 1292, 1335 Integrated passives, 747 FinFET, 377, 763, 1799 Heterojunction bipolar transistors, 1071 Interband cascade structure, 1422 FINFET, 1435 Heterostructure, 245, 802 Interband tunneling, 257 FinFETs, 1488 Heterostructures, 1693 Interconnects, 747 Flash, 1799, 1849 HFCVD, 1044 Interface, 283 Flash memory, 1745, 1841 HFET, 1589 Interface roughness scattering, 1454 Flat-band voltage, 1223 HfO>, 137, 524, 1833, 1849 Interface state density, 896 Flicker noise, 702 HfSiON, 1849 Interface-state density, 1223 Floating body, 779 High current, 77 Interface state recombination, 1282 Floating body effect, 1547 High electric field stress, 1140 Interface states, 9, 545, 2002 Floating-body effect, 1759 High performance, 1185 Interface traps, 491, 1140 Floating-body effects, 708 High resistivity substrate, 491 Intermetallic compounds, 774 Floating body effect (FBE), 1536 High sensitivity, 1933 Interpoly dielectrics, 1841 Floating contact, 1655 High work function, 1857 Intervalley transfer, 245 Mem Floating gate, 1805, 1841 High-x, 193 Intra-chip wireless interconnects, 1477 Mem Floating metal ring, 437 High-k, 271 Intrinsic channel, 640 Mem 1/f fluctuation, 1449 High-x, 907 Intrinsic delay, 479 Mem I/f noise, 865, 907, 1335, 1556 High-k, 695, 825, 1767, 1833 Intrinsic instability, 257 Mem ‘Forward voltage drop, 834 High-« gate dielectric, 524 Intrinsic parameter fluctuation, 740 Mem MEM Fowler—Nordheim, 825 High-é gate dielectrics, 702 Inverse narrow width effect, 301 Fowler-Nordheim injection, 1140 High-k materials, 1841 Inversion, 1017 MES MES|]