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Semiconductor-Diode Parametric Amplifiers PDF

216 Pages·2012·35.44 MB·English
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3 0 8 0 7 5e 015004d-googl 9p 3# p.e md_us 7/ss 2e 0c et/2g/ac dl.handle.nathitrust.or hh p://ww. MT / htthttp://w 28 02:41 Gdigitized / 7-e- 2-0ogl 1o 0G on 2ain, d m eo neratblic D eu GP 3 0 8 0 7 5e 015004d-googl 9p 3# p.e md_us 7/ss 2e 0c et/2g/ac dl.handle.nathitrust.or hh p://ww. MT / htthttp://w 28 02:42 Gdigitized / 7-e- 2-0ogl 1o 0G on 2ain, d m eo neratblic D eu GP 3 0 8 0 7 5e 015004d-googl 9p 3# p.e md_us 7/ss 2e 0c et/2g/ac dl.handle.nathitrust.or hh p://ww. MT / htthttp://w 28 02:43 Gdigitized / 7-e- 2-0ogl 1o 0G on 2ain, d m eo neratblic D eu GP 3 0 8 0 7 5e 015004d-googl 9p 3# p.e md_us 7/ss 2e 0c et/2g/ac dl.handle.nathitrust.or hh p://ww. MT / htthttp://w 28 02:44 Gdigitized / 7-e- 2-0ogl 1o 0G on 2ain, d m eo neratblic D eu GP Semiconductor-Diode Parametric Amplifiers 3 0 8 0 7 5e 015004d-googl 9p 3# p.e md_us 7/ss 2e 0c et/2g/ac dl.handle.nathitrust.or hh p://ww. MT / htthttp://w 28 02:46 Gdigitized / 7-e- 2-0ogl 1o 0G on 2ain, d m eo neratblic D eu GP PRENTICE-HALL INTERNATIONAL SERIES IN ENGINEERING BLACKWELL AND KOTZEBUE Semiconductor-Diode Parametric Amplifiers DBESHER Games of Strategy: Theory and Application EDMUNDSON, ED. Proceedings of the National Symposium on Machine Translation KOLK Modern Flight Dynamics STANTON Numerical Methods for Science and Engineering PRENTICE-HALL, INC. PRENTICE-HALL INTERNATIONAL, INC., UNITED KINGDOM AND EIRE PRENTICE-HALL OF CANADA, LTD., CANADA BERLINER UNION, WEST GERMANY AND AUSTRIA 3 0 8 0 7 5e 015004d-googl 9p 3# p.e md_us 7/ss 2e 0c et/2g/ac dl.handle.nathitrust.or hh p://ww. MT / htthttp://w 28 02:47 Gdigitized / 7-e- 2-0ogl 1o 0G on 2ain, d m eo neratblic D eu GP Semiconductor-Diode Parametric Amplifiers LAWRENCE A. BLACKWELL Texas Instruments, Inc. KENNETH L. KOTZEBUE Watkins-Johnson Co. Prentice-Hall, Inc., Englewood Cliffs, N. J. 1961 3 0 8 0 7 5e 015004d-googl 9p 3# p.e md_us 7/ss 2e 0c et/2g/ac dl.handle.nathitrust.or hh p://ww. MT / htthttp://w 28 02:48 Gdigitized / 7-e- 2-0ogl 1o 0G on 2ain, d m eo neratblic D eu GP I ibrary 1 I ' ' PRENTICE-HALL ELECTRICAL ENGINEERING SERIES V ?'•' >L WILLIAM L. EVERITT. Editor t 11 '•- ANNER Elements of Teletision Systems BALABANIAN Network Synthesis " J BENEDICT Introduction to Industrial Electronics n BLACKWELL AND KOTZEBUE Semiconductor-Diode Parametric Amplifiers L , X > DAVIS AND WEED Industrial Electronic Engineering DEKKER Electrical Engineering Materials DUNN AND BARKER Electrical Measurements Manual EVANS Experiments in Electronics FETT Feedback Control Systems FICH Transient Analysis in Electrical Engineering FICH AND POTTER Theory of A-C Circuits FLORES Computer Logic: The Functional Design of Digital Computers GOLDMAN Information Theory GOLDMAN Transformation Calculus and Electrical Transients HERSHBERGER Principles of Communication Systems JORDAN Electromagnetic Waves and Radiating Systems Lo, ET AL Transistor Electronics MARTIN Electronic Circuits MARTIN Physical Basis for Electrical Engineering MARTIN Ultra High Frequency Engineering MOSKOWITZ AND HACKER Pulse Techniques NIXON Handbook of Laplace Transformation: Tables and Exampl,s NIXON Principles of Automatic Controls PARTRIDGE Principles of Electronic Instruments PUMPHREY Electrical Engineering, 2nd PUMPHREY Fundamentals of Electrical Engineering, 2nd REED Electric Network Synthesis REED Foundation for Electric Network Theory HIDEOUT Active Networks RYDER, F. L. Creative Engineering Analysis RYDER, J. D. Electronic Engineering Principles, 3rd 3 RYDER, J. 0D. Electronic Fundamentals and Applications, 2nd 8 RYDER, J. 0D. Networks, Lines and Fields 7 SSSHFOOEODDHEDOR OF Au 0150045TnNhdDea oHmrEyeL naMtna dCls iA rocpfup Eiltil ceAacntd-googletiaroolnyms oiasfg Fbneyer tLriiacteb Wsoraavteosry Methods, 2nd STOUT Ba9sic Electrical Measuprements, 2nd 3# THOMSONp. LaPlace Transformeation, 2nd VAIL Circumdits in Electrical Engi_usneering VAN DER 27/ZIEL Noise ess VVAANN DVAELRK et/20ZEINEBL USRoGlid N Settawteo rPkh Ayg/accnsiaclayls iEslectronics VWWWOAAENERR DDFTI EEAInRLNtDSdl.handle.nDrCo I dHnDut ArAcoVNtdIioSDun cFS tutWioon nAdE GalteomOc Et eRrlnieectathitrust.orcacatullr srEo ronnefginc Eit nA lEenncleeatrclrionotgrngi c ,CD a3oelr mTdvirpcauentsse iaresnndts Circuits hh ÂADW©LUILTC H1RE9OIDG6U H1ITN TMT / http:// B PSAYE N RRPYEMR SFEIESONRSRTIVMOICEN,ED B -.IHY NN A MOWLI LRMP, Ihttp://www.AETINROINCTGG .O,R EFAFRN PTOHOHM LIOSE RT WBH OOOETOO PHKDUE MBCRLL AMIIYSFE HFBASEEN,R SRNS,E. PJ.RO- LP8iR0b6IrNa1Tr9yE Do f28 02:49 GI NC oTnHgEr eUsNs ICTEaDta lSoTgA CTdigitized / aErSd O NFu AmMbEeRr:I C6A1-1Z978 7-e- 2-0ogl 1o 0G on 2ain, d m eo neratblic D eu GP Preface The tempo of technological progress today is undeniably swift and at times rather startling. Often, before we are fully able to grasp the conse- quences of one development, another has made its appearance. The progress made in recent years on the achievement of low-noise amplifica- tion at microwave frequencies is certainly a good example. Up to a few years ago, it was largely a struggle for one tenth-decibel improvement in noise figure here and another there. Then, almost without warning, a deluge of low-noise devices was upon us. The "old" traveling-wave tube began to achieve noise figures comparable with the best resistive mixers, and soon achieved noise figures well below the supposed theoretical minimum. Quantum mechanics became a must for the aspiring elec- trical engineer with the introduction of "microwave amplification by stimulated emission"—the maser. Here was a device with a noise figure so low that it was some time before this quantity could even be measured! Close on the heels of the maser came the parametric amplifier. Not as low in noise as the maser, the parametric amplifier nevertheless quickly achieved a position of prominence—mainly because of its rather unbelievable simplicity. The writing of a book in such an atmosphere of swift and unyielding progress is certainly not without its hazards. A "comprehensive" book is out of the question. A compilation of all the current literature runs the risk of having significant omissions by the time of publication. Today's statements of finality can become tomorrow merely historical curiosities. The present book will make no pretense as to completeness. The empha- sis instead will be on the presentation of such basic information as will be of interest to the average design engineer who wants to know how and why parametric amplifiers work, and when they can be employed to ad- vantage. 3 0 8 0 7 5e 015004d-googl 9p 3# p.e md_us 7/ss 2e 0c et/2g/ac dl.handle.nathitrust.or hh p://ww. MT / htthttp://w 28 02:50 Gdigitized / 7-e- 2-0ogl 1o 0G on 2ain, d m eo neratblic D eu GP Vi Preface Further boundaries to the discussion can be summed up by the fol- lowing three phrases: (1) semiconductor diodes; (2) low noise; and (3) microwave devices. Parametric devices can be based on electron beam and ferrite phenomena. Other embodiments will, no doubt, be forth- coming. The semiconductor-diode parametric amplifier, however, has the advantage of being the simplest device both in concept and construc- tion, and currently is the most popular form of parametric amplifier. Many of the concepts presented here are by no means limited to diode devices: the concepts of energy transfer and general noise properties are, for example, of universal application. The emphasis on the low-noise aspects of these devices is mainly dictated by the fact that this charac- teristic is the major reason for the employment of parametric amplifiers. Because of this, and because of some confusion regarding the peculiar noise properties of parametric amplifiers, a fairly complete discussion of noise is incorporated. Finally, since it is largely in the microwave re- gion that low-noise performance is both very useful and very difficult to obtain, whenever reference is made to actual devices, it will be made in the context of microwave devices. The authors would like to express their sincere appreciation for the assistance and encouragement provided by Texas Instruments Incorpo- rated during the writing of this book. We wish to especially thank Dr. J. R. Baird, T. M. Hyltin, and B. T. Vincent, Jr. for many helpful dis- cussions and suggestions. It is also a pleasure to acknowledge the help of R. E. Allan, T. Pedersen, and Mrs. Betty Chupik for much of the com- putational work. Special thanks are also due Dr. J. J. Spilker, Jr. for his assistance in the analysis of the noise characteristics of degenerate parametric amplifiers. L. A. Blackwell K. L. Kotzebue Los Angeles, California 3 0 8 0 7 5e 015004d-googl 9p 3# p.e md_us 7/ss 2e 0c et/2g/ac dl.handle.nathitrust.or hh p://ww. MT / htthttp://w 28 02:51 Gdigitized / 7-e- 2-0ogl 1o 0G on 2ain, d m eo neratblic D eu GP

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BLACKWELL AND KOTZEBUE Semiconductor-Diode Parametric Amplifiers. DBESHER Games of Lo, ET AL Transistor Electronics. MARTIN Electronic . reactive elements. Manley and Peterson92 described negative resistance.
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