PII: S0079-68 16(98)00025-2 PROGRESS IN SURFACE SCIENCE AUTHOR INDEX Carminati, R. 133 Ogawa, S. 239 Greffet, J.-J. 133 Petek, H. 239 Hashizume, T. | Sakurai, T. | Margaritondo, G. 311 Xue, Q.-K. | PII: S0079-6816(98)00026-4 PROGRESS IN SURFACE SCIENCE SUBJECT INDEX AIN 5 Coherence 241-2, 244 Advanced Light Source (ALS) 317 IPES 333-42 AES see Auger electron spectroscopy near-field optics 171-2, 191-200 AFM see Atomic force microscopy Coherence-enhanced imaging 336-41 Ag(100), IP states 292 Coherence-sharpening 340 Ag(110), 2PP 267 Coherent artifact 256 Ag(111), IP states 292 Coherent control 299-302 Airy half-disk criterion 335 Coherent interference 257 AIAs(001), 3x2 surface 96-101, 119 Collection-mode SNOM 145, 146, 156, 166—72, ALS see Advanced Light Source 173-81, 201, 206, 223-6 AISb(001) 110-15 Collinear excitation 257-8 c(4x4) 109, 111-12 Constant-distance mode 173-4, 178, 200-1, Angular spectrum !41, 216 206-15 Antimonide (001) surfaces 106-15 Constant-height mode 173-4, 178, 200-6 Apertureless near-field 185-90 Constant-intensity mode 173, 200-6 Apertureless SNOM 201 Contrast inversion 152 Apertureless techniques 145-6 Cu Artifacts, SNOM 206-15 2PC 278, 282-5 As(001), STM 21-2 2PP 266-8 As model 58, 60 d-band catastrophe 286-8 As-decapping technique 5 hot-electrons 276 As-dimer-missing mechanism 19, 22, 24-5 TR-2PP 242, 245 As-dimer-vacancy 22 Cu(100), I2PC 277 Atomic force microscopy (AFM) 87 Cu(1il) Auger decay 265-6, 267, 268, 277, 286 coherent control 299 Auger electron spectroscopy (AES) 25 12PC 268-76 Autocorrelation (AC) 254-5, 256 IP states 292-3 Avalanche multiplication 277 physisorbed adlayers 294-5 SS 296-7 Cuprates, hot-electrons 290 Ballistic electron emission microscope (BEEM) 315 Bilayer two As-dimer models 26-7, 28-41 Bilayer two Ga-dimer model 58, 59, 60-3, 70 d-band catastrophe 262, 285-8 Born approximation 158, 180, 187, 208 Dangling bonds 6, 19, 87, 94 Degreasing 13 Density of states (DOS) Cavity dumping 253-4 2PC 283-4 Chalcogenides, hot-electron lifetimes 289-90 Drude absorption 267 Chemisorption induced surface states 296-7 TR-2PP 245 SUBJECT INDEX Deoxygenated and de-ionized water (DODIW) _ Free-electron lasers (FEL)-Internal Photo method 16-17 Emission (FELIPE) 323, 325, 329 Dephasing, energy and temperature Free-electron lasers (FELs) 312, 313-15, dependence 271-6 323-33 Diffraction limit 138, 140-2, 335 Frequency Resolved Optical Grating (FROG) Diffusion into the bulk 276 255 Dimer missing mechanism 19, 22, 24-5, 78-9, _ Fresnel diffraction 336-8 89-90 Fresnel factors 148 Dimer vacancy effect 22, 56-8, 67 Fresnel reflectivity 149 Dimerization, GaAs 19 Fresnel zone plates 317 Dipole radiation 148 DODIW see Deoxygenated and de-ionized GaAs water method DOS see Density of states 2x6 73 hot-electron lifetimes 288—9 Drude absorption 262-5, 266-8 ? Drude theory 242, 243, 275 GaAs(001) Soin tnnig: 957 1x6 phase 49 D3; 72 : 2x3 phase 53-4 2x4 phase 74-7 e-e scattering 274, 276, 277, 279-85, 2x4/c(2x8) surface 20-44 e-p scattering 276 4x1 phase 73-4 ECM see Electron counting model 4x2 phase 65, 72, 74-7 Elastic scattering 248 4x2/c(8x2) phase 55-63, 65 Electric dipole, near-field optics 150-4 4x3/c(4x6) 54 Electron counting model (ECM) 17-20, 43, 4x6 phase 64-73 111, 119 As-rich (2x4) 15-16 Electron dynamics, metals 239-310 As-rich ¢c(4x4) 15-16 Electron wavepacket dynamics 298 As-rich reconstructions 20-54, 63 Eleciron-optics imaging techniques 320-2 c(4x4) phase 45-9 Electrostatic limit 147, 148, 150, 154-5 Ga-rich 4x2 16 Energy dependence, dephasing 271-6 Ga-rich 4x6 16 Equivalent surface profile 159-60, 161-2 Ga-rich reconstructions 55-77 Evanescent waves 139-40, 146~7 pseudo 4x6 phase 70-1, 72, 73 Excitation geometry 257-8 STM 4, 5-77, 119 GaN surfaces 5, 115-19 GaP(001) 14 FELs see Free-electron lasers 4x2 phase 104-6 Femtosecond time-resolved two-photon GaSb(001) 110-15, 119 photoemission 239-310 1x5 110-15 Fermi edge 268 2x5 110-13 Fermi level 343 Gold, hot-electron lifetimes 288 Fermi level pinning 40-1 Graphite, hot-electron lifetimes 289 Fermi liquid theory (FLT) 274, 278-85, 286, Green’s dyadic 158, 161, 217-19 288 Group velocity dispersion (GVD) 250, 253 Filtering effect 163 GVD see Group velocity dispersion FLT see Fermi liquid theory Four-atom-block model 47 Fourier space 161 h-h scattering 274 Fourier transform 141, 194 Heisenberg uncertainty principle 140—2 SUBJECT INDEX High resolution electron energy loss IPES see Internal photoemission spectroscopy spectroscopy (HREELS) ITR-2PP see Interferometric time-resolved 4x2/c8x2 56 two-photon photoemission GaAs(00) 22-3, 28 Holograms 155-6, 162 Kerr effect 252 Hot-electron Kink density 40—2, 85-7 optical excitation 261-8 Kramers-Kronig relationship 302 population dynamics 276-90 Lambertian detectors 168 12PC see Interferometric two-pulse correlation Layered materials, hot-electron lifetimes IAC see Interferometric second-order auto 289-90 correlation measurement LEED see Low energy electron diffraction Illumination-mode SNOM 144, 146, 166-72, Linear combination of structural motif 181-91, 200, 201 (LCSM) 28, 54 Image formation 133-237 Lippmann-Schwinger equation 158, 160, Image potential (IP) states 291-4, 297 219-20 Image sharpening 336-40 Local-density-functional approximation 28 Impulse response 162-3, 173, 179-81, 184-5, Lorentzian linewidth 273 187-8, 190, 222-3 Low density of states (LDOS) 58 InAs, STM 13 Low energy electron diffraction (LEED) InAs(001) 14, 77-96 GaAs({001)4x6 phase 64, 65, 70 As-rich 2x4 phase 78-90 GaAs(001) 21 In-rich 4x2 reconstruction 80, 87, 90-6 GaAs(001)-1x6 phase 50, 51 In-rich 6x2 reconstruction 91-6 GaAs(001)-4x2/c(8x2) phase 55 Inelastic scattering 248 InP(001)-2x4 phase 101-3 Inhomogeneous samples, near-field optics 156-66 Mach-Zehnder interferometer (MZI) 250-1, InN 5 258 InP(001) 14 MAXIMUM 317, 318 2x4 phase 101-4, 119 MBE see Molecular beam epitaxy 4x2 phase 101-4 Medium-energy ion scattering (MEIS) 25 In-rich 4x2 surface 57 MEE see Migration enhanced epitaxy InSb(001) 14-15, 106-10 MEIS see Medium-energy ion scattering 4x2/c(8x2) 109 MEPHISTO 321 c(4x4) 107-8 Mesoscopic sample, near-field optics 177-8 Interface spectromicroscopy 315—22 Metals, electron dynamics 239-310 Interference, near-field optics 155-6 Migration enhanced epitaxy (MEE) 16 Interferometric second-order auto correlation Molecular beam epitaxy (MBE) 9-16, 21, 23-4 (IAC) measurement 255 MZI see Mach-Zehnder interferometer Interferometric time-resolved two-photon photoemission (ITR-2PP) 243, 258-60 N-type doping 40-1 Interferometric two-pulse correlation (I2PC) Nanodetector 188-90 248, 268-76 Nanosource 188-90 Internal photoemission spectroscopy (IPES), Near-field detection 144—5 semiconductor interfaces 311-46 Near-field internal photoemission Intrinsic surface states 291-4 spectromicroscopy 315 lon bombardment and annealing (IBA) 5 Near-field optics (NFO), image formation IP see Image potential states 133-237 SUBJECT INDEX Near-field region 148 RHEED see Reflection high energy electron Non-collinear excitation 258 diffraction Rhodium (Rh), hot-electron lifetimes 288 Occupied surface states (OSS) 243, 267, 273, 274, 291-4 Scanning near-field optical microscope coherent control 299-301 (SNOM) 136, 156-7, 161-2, 200-15 Operating modes, SNOM 200-15 collection-mode 145, 146, 156, 166-72, Optical Bloch equations (OBE) 247, 248, 275 173-81, 201, 206, 223-6 Optical excitation, hot-electron 261-8 illumination-mode 144, 146, 166-72. Optical index 148—50 181-91, 200, 201 Optical parametric amplification (OPA) 254 SNOM-FEL 326-33 OSS see Occupied surface states Scanning photoelectron spectromicroscopy (SPS) 315-19 Perturbative approach 207-9 Scanning tunneling microscopy (STM) 1-131, Phase contrast 340 136, 142, 144-5 Phase properties, near-field optics 154-6 Scanning tunneling optical microscope Phase-confinement effects 155 (STOM) 145, 156, 170-2 Phosphide (001) surfaces 101-6 Scanning tunneling spectroscopy (STS) 8, 9 Photoelectron energy analysis 260-1 Scattered field 155 Photon Scanning Tunneling Microscope Schottky barriers 315, 320, 323, 329 (PSTM) 145, 156, 170-2 Schottky interface 320 Physisorbed adlayers 294—6 Schwarzschild objective 317 Point dipole, near-field optics 176-7 Second harmonic generation (SHG) 250, 253 Polarization effects 147, 150—4, 165-6, 183, 188 Second harmonic generation (SHG)-FROG Pseudopotential method 28 255 PSTM see Photon Scanning Tunneling Secondary electron intensity (SEI) 25 Microscope SEI see Secondary electron intensity Self-phase modulation (SPM) 252, 253-4 Ramsey fringe experiment 299, 301 Semiconductors Rayleigh criterion 334 hot-electron lifetimes 288-9 Rayleigh hypothesis 161 III-V compound 1-131 Reciprocity theorem 166-70, 172, 174, 176, internal photoemission spectroscopy 311 181-3, 186-7, 220-1 46 Reflection factors, near field 148-50 spectromicroscopy 311-46 Reflection high energy electron diffraction SHG see Second harmonic generation (RHEED) 10-11, 20-1, 25-6, 34, 37-8, 43 Shockley states 291 AlAs(001)-3x2 surface 97-9 Si(100), hot-electron lifetimes 289 GaAs(001)-1x6 phase 50 SNOM see Scanning near-field optical GaAs(001)-2x3 phase 53-4 microscope GaAs(001)-4x2/c(8x2) phase 55, 59 SnS>, hot-electron lifetimes 289 GaAs(001)-4x6 phase 64, 70 Spatial coherence 191, 334-5, 338 InP(001)-4x2 phase 104 Speckle pattern 194-6 InSb(001) surface 106—10 Spectromicroscopy, semiconductor interfaces Reflection mode 181 311-46 Relativity 313 SPM see Self-phase modulation Resolution 213-14 SPS see Scanning photoelectron Resolution limit, near-field optical microscopy spectromicroscopy 138-42 SSHG see Surface second harmonic generation SUBJECT INDEX Step bunching 87-9 Tight-binding approximation (TBA) 28, 41 STM see Scanning tunneling microscopy Time coherence 191, 335-6, 338 Stoichiometry, GaAs(001)4x6 phase 71-3 Time-domain-technique 297 STOM see Scanning tunneling optical Time-of-flight energy analysis 261 microscope Time-resolved two-photon photoemission STS see Scanning tunneling spectroscopy (TR-2PP) 239-310 Sum-frequency generation (SFG) 253 TMGa adsorption 65 SuperMAXIMUM 317 Transfer function 162-3, 173, 198-200, 223-6 Superresolution 154 Tunneling near-field optical microscopy Surface reconstruction 6-7 (TNOM) 144 Surface relaxation 6 Two As-dimer model 26-7, 28-41, 79-80 Surface second harmonic generation (SSHG) Two Ga-dimer model 58, 59, 60-3, 70 255-6 Two-photon photoemission (2PP) 239-310 Surface second harmonic generation (SSHG)- Two-pulse correlation (2PC) 246, 247-8 FROG 256, 271 Two-pulse cross-correlation (2PCC) 246 Surface spectromicroscopy 315-22 Surface state dynamics 291-7 Ultrafast laser techniques 252-60 Swiss Light Source (SLS) 333 Undulators 313 Synchotron light sources 311-46 Wiener-Khinchin theorem 194 Tamm states 291 Tantalum (Ta), hot-electron lifetimes 288 Temperature dependence, dephasing 271-6 X-ray diffraction (XRD), GaAs 38, 47 Three As-dimer 28-41 X-rays Three Ga-dimer model 59 coherence 333 III-IV compound semiconductor (001) surfaces focusing 317 1-131 Ti:sapphire lasers 252-4, 326 Z-motion artifacts 206—14