SUBJECT INDEX Adducts, intramolecular 11 Defect densities 69 Alkoxides 186 Defect network 97 Aluminium carbide 3 Deformations 213, 231 Aluminium gallium arsenate 3 Diamond 270, 373 Annealing 83 Diamond films 373 high temperature 193 Diatomic differential, modified neglect 30 post growth 103 Diethyl arsine 5 thermal 294 8-Diketonates 187 Anti phase domains 63, 78 Dimethyl-aminopropyl gallium cyclohexane 11 Antistokes process 253 Dimethylmethoxy aluminium 10 Arsenic sources, toxicity 8 Diodes Arsenic subhydrides 7 laser 99, 115 Arsine by electrolysis 9 light emitting 98 Atomic layer epitaxy (ALE) 96 Dipole moment 20 Dislocation reconfiguration 82 Donor contamination 4 Bandgap 61 Doping profiles 96 Bennet—Tolksdorf seeding 147 Dye molecules 249 Boltzman constant 27 Brewster-angle incidence 250 Bridgman-Stockbarger method of crystal Ekman layer flow 152 growth 36 Electron mobility 5 Brillouin zone 265 Electrostatic binding 116 erate fracture 209 Epitaxial lift-off 116 Epitaxy ; a atomic layer (ALE) 96 Calcium lanthanum sulphide 226 liquid phase (LPE) 97, 150, 153 Cathodoluminescence 75 metal organic molecular beam (MOMBE) 5, 96 Centrosymmetry 20 metal organic vapour phase (MOVPE) 1, 58, Ceramics 199 77. % Chalocogenides 321 migration enhanced (MEE) 97 Coherent antistokes Raman spectroscopy 7 Etching Congruent evaporation 10 anisotropic 70 Coordinate saturation 10 defect selective 70 Couette flow 152 Etch pits 69. 206 Crack banks =2 00 Etch profile 64 Crack growth, UV-irradiation 208 Ethyl dimethyl indium 3 Crossed polarization 256 Evaporative decomposition 328 Crucible rotation 151 Excitons 250 Crystallization 152 Crystals ferroelectric 199 growth 35 Fermi-energy 253 Bridgman-Stockbarger 36 Ferroelastic boundaries 205 Czochralski method 37 Ferroelectric hardness 205 Ferroelectric oxides 183 from solution 40 Field effect transistor, metal semiconductor 114 Kyropoulos method 40 Flexural strength 336 planar 94 6 Forced flow 173 procedure Forced stirring 155 slow cooling 41 Fracture theory 199 solvent evaporation 42 Fracture toughness 216 temperature difference 43 Furnace, horizontal 35 lattice matching 53 parasitic 159 preparing thin specimens 44 quality 68 Gradient sublimation 32 symmetry 20) Graphite 270 Czochralski growth 37 Group V novel precursors 4 vi Subject Index Growth kinetics 173 Material quality 106 Growth, physical vapour transport 35 Maxwell interaction 203 Growth rate evaluation 174 MBE 9, 58, 77, 274, 301 Growth techniques 96 modulated 97 McRae equation 26 Metal organic chemical vapour deposition Heat seeking devices 322 (MOCVD) 183 Heptafluorooctandione 188 Metal organic molecular beam epitaxy Heshin model 217 (MOMBE) 5, 96 Heteroepitaxial growth 75, 101 Metal organic vapour phase epitaxy (MOVPE) 1, Hydrocarbons, volatile stable 4 58, 77 plasma enhanced 96 precursors for III-V_ 1 Impurity detection 33 safety considerations | Incident photon energy 247, 290 Methane, C!3 enriched 5 Incongruent evaporation 10 Microcracks 56, 91, 205 Indenter penetration 233 Microemulsion technique 343 Indium phosphide 9 Microtwins 97 Infrared materials 323 Microwave discharge 9 Integrated circuits 100 Migration enhanced epitaxy 97 Intercrystallite layer 222 Minority carrier lifetime 96 Interfacial processes 173 Misfit strain 82 Intermolecular adducts 11 Mismatch thermal expansion 81 Internal electrical fields 230 Modulation efficiency 116 Isobutyl phosphine 9 Modulators 99 Isostatic pressing 328 Molecular polarizability, calculation 29 Monoethyl arsine 7 Monolithic integration 60 Kanzig region 225 Monomethyl gallium 5 KOH etching 69 Monophenyl arsine 6 , Kurtz powder technique 21 Kyropoulos method of crystal growth 40 Native oxide removal 77 Nitroaniline 28 Landau levels 260 Nonlinear optical devices 19 Lanthanum sulphide, allotropes 337 Nonlinear properties, estimation 28 Laser colour centre 249 diodes 99, 115 Optical devices, nonlinear 19 Ti/sapphire 249 Optoelectronic integrated circuits 56, 115 Lattice mismatch 66, 84 Organo arsenic hydrides 9 Lattice, optical quality 19 Ostwald—Miers region 144 Lead-t-butoxide 187 Oxide desorption 111 Lead scandium tantalate 186, 191 Lead titanate 184 Le Chatelier—-Schroder equation 168 Parasitic crystals 159 Light emitting diodes 56 Parasitic doping 94 Linear elastic mechanics 200 Perovskite 193 Linear piezoeffect 200 Phonons 250 Linear polarizability 30 folded acoustic 272 Linear thermal expansion 62 scattering 262 Liquid phase epitaxy (LPE) 97, 150, 153 Phosphine 9 Liquidus curves, calculation 167 Photoneutralization 304 Lithium niobate 19 Photonic integrated circuits 118 Localized cooling 147 Physical vapour transport 35 Localized vibrational modes 252, 290 Piezoceramics 239 Low temperature nucleation layer 101 Piezoeffect, linear 200 Piezoreflectance 258 Planar growth 94 Magneto plumbite 159 Planck constant 27 Magnons 250 Plasmons 253 Mass transport 173 Plastic deformation 213 Material optimization 109, 111 Plasticity zone 225 Material parameters 59 Poisson's coefficient 225 Subject Index Vii Polarization, crossed 256 Sulfidization 354 Polarizability, solvatochromic method 26 Superlattices, strained layer 83 Polarons 250 Polycrystalline film 62 Post-growth annealing 103 Tensile dilatation 223 Precursor optimization 76 Tensile stresses 84 Precursor purification 30 Ternary sulphides 224 Precursor side reactions 8 Tertiary butyl arsine 5 Pseudobinary phase diagram 166 Tetraethyl diarsine 6 Pseudoternary phase diagram 165 Tetraethyl lead 187 Purification of precursors 31 Thermal annealing 84 Purification, zone refining 30 Thermal cycling 85, 104 Pyridinium-N-phenoxide dyes 26 Thermal dissociation 3 Pyrolysis, water vapour 191 Thermal expansion 65 coefficient 217 Thermal strain 82 Quantum mechanical calculations 27 Thermal stresses 65 Quantum wells 95 Threshold current 99 multiple 253 Transistors 97 Quasi-particle excitations 250 Transmission electron microscopy 72 Triethyl arsenic 5 Triethyl gallium 4 Raman effect, order of magnitude 247 Triethyl indium 3 Raman scattering Triisobutyl aluminium 11 electronic excitations 302 Triisobutyl gallium 11 localized vibrational modes 290 Trimethyl aluminium 3, 10 resonant 252 Trimethyl arsenic 4 Raman spectroscopy 245 Trimethyl gallium diisopropyl amine adduct 11 coherent antistokes 7 Trimethyl indium 2, 3 Rayleigh scattering 249 Resonance 257 Rutherford back scattering 72 UV-irradiation, crack growth 208 Safety regulations 4 Vickers indenter 201, 213 Sapphire 184, 268 Saturation coordinate 10 Waferbowing 65 intramolecular 11 Wafers 103 Second harmonic generation 23 Waveguides 99, 115 Selective growth 90 Wet etching 69 322 microcrack induction 91 Wiens displacement law — Shear modulus 225 Window materials 323 Single crystals, growth 143 Wright etching 69 Solar cells 99, 115 Solubility models 171 Solvent evaporation 144 X-ray diffraction 71 Spectroscopy coherent antistokes Raman 7 Raman 245 Young’s modulus 224 Spiral shearing 151 Stark ladder 260 Strained layer superlattices 83 Sublimation gradient 32 Zone refining 30 COMPOUND INDEX ALC, 3 GaCH, 5 AI(CH;); 3, 10 Ga(C,H;); 11 AK(C,H;); 11 AlGaAs 3 As(CH;); 4 In(CH;),; 2,3 As(C,Hs); 5 In(C,Hs); 3 AsH(C>Hs)> 5 InP 9 AsH,(C,Ho) 5 LiNbO, 19 (CH;),AlIOCH, PH, 9 (C,Hs),As,H(sC) , C,H;AsH, 6 Pb(C3H;),; 187 C,H;In(CH;), 3 Pb,ScTaO, 186 CaLa,S, 326 PbTiO; 184