Table Of Content

Power Electronics Semiconductor Devices Edited by Robert Perret This page intentionally left blank Power Electronics Semiconductor Devices This page intentionally left blank Power Electronics Semiconductor Devices Edited by Robert Perret First published in France in 2003 and 2005 by Hermes Science/Lavoisier entitled: Mise en œuvre des composants électroniques de puissance and Interrupteurs électroniques de puissance © LAVOISIER, 2003, 2005 First published in Great Britain and the United States in 2009 by ISTE Ltd and John Wiley & Sons, Inc. Apart from any fair dealing for the purposes of research or private study, or criticism or review, as permitted under the Copyright, Designs and Patents Act 1988, this publication may only be reproduced, stored or transmitted, in any form or by any means, with the prior permission in writing of the publishers, or in the case of reprographic reproduction in accordance with the terms and licenses issued by the CLA. Enquiries concerning reproduction outside these terms should be sent to the publishers at the undermentioned address: ISTE Ltd John Wiley & Sons, Inc. 27-37 St George’s Road 111 River Street London SW19 4EU Hoboken, NJ 07030 UK USA www.iste.co.uk www.wiley.com © ISTE Ltd, 2009 The rights of Robert Perret to be identified as the author of this work have been asserted by him in accordance with the Copyright, Designs and Patents Act 1988. Library of Congress Cataloging-in-Publication Data Mise en œuvre des composants électroniques de puissance and Interrupteurs électroniques de puissance. English. Power electronics semiconductor devices / edited by Robert Perret. p. cm. Includes bibliographical references and index. ISBN 978-1-84821-064-6 1. Power electronics. 2. Power semiconductors. 3. Solid state electronics. I. Perret, Robert. II. Title. TK7881.15.M5713 2009 621.381'044--dc22 2009001021 British Library Cataloguing-in-Publication Data A CIP record for this book is available from the British Library ISBN: 978-1-84821-064-6 Printed and bound in Great Britain by CPI Antony Rowe, Chippenham and Eastbourne. Table of Contents Preface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xi Chapter 1. Power MOSFET Transistors. . . . . . . . . . . . . . . . . . . . . . 1 Pierre ALOÏSI 1.1. Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.2. Power MOSFET technologies. . . . . . . . . . . . . . . . . . . . . . . . . 5 1.2.1. Diffusion process. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 1.2.2. Physical and structural MOS parameters . . . . . . . . . . . . . . . . 7 1.2.3. Permanent sustaining current. . . . . . . . . . . . . . . . . . . . . . . 20 1.3. Mechanism of power MOSFET operation. . . . . . . . . . . . . . . . . . 23 1.3.1. Basic principle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 1.3.2. Electron injection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 1.3.3. Static operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 1.3.4. Dynamic operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 1.4. Power MOSFET main characteristics . . . . . . . . . . . . . . . . . . . . 34 1.5. Switching cycle with an inductive load . . . . . . . . . . . . . . . . . . . 36 1.5.1. Switch-on study. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 1.5.2.Switch-off study. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 1.6. Characteristic variations due to MOSFET temperature changes. . . . . 44 1.7. Over-constrained operations. . . . . . . . . . . . . . . . . . . . . . . . . . 46 1.7.1. Overvoltage on the gate . . . . . . . . . . . . . . . . . . . . . . . . . . 46 1.7.2. Over-current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 1.7.3. Avalanche sustaining. . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 1.7.4. Use of the body diode . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 1.7.5. Safe operating areas . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 1.8. Future developments of the power MOSFET. . . . . . . . . . . . . . . . 53 1.9. References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 vi Power Electronics Semiconductor Devices Chapter 2. Insulated Gate Bipolar Transistors. . . . . . . . . . . . . . . . . . 57 Pierre ALOÏSI 2.1. Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57 2.2. IGBT technology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58 2.2.1. IGBT structure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58 2.2.2. Voltage and current characteristics . . . . . . . . . . . . . . . . . . . 60 2.3. Operation technique. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63 2.3.1. Basic principle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63 2.3.2. Continuous operation . . . . . . . . . . . . . . . . . . . . . . . . . . . 64 2.3.3. Dynamic operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71 2.4. Main IGBT characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . 74 2.5 One cycle of hard switching on the inductive load . . . . . . . . . . . . . 75 2.5.1. Switch-on study. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76 2.5.2. Switch-off study . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78 2.6 Soft switching study. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86 2.6.1. Soft switching switch-on: ZVS (Zero Voltage Switching). . . . . . 86 2.6.2. Soft switching switch-off: ZCS (Zero Current Switching). . . . . . 88 2.7. Temperature operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94 2.8. Over-constraint operations. . . . . . . . . . . . . . . . . . . . . . . . . . . 98 2.8.1. Overvoltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98 2.8.2. Over-current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99 2.8.3. Manufacturer’s specified safe operating areas. . . . . . . . . . . . . 113 2.9. Future of IGBT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116 2.9.1. Silicon evolution . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116 2.9.2. Saturation voltage improvements . . . . . . . . . . . . . . . . . . . . 117 2.10. IGBT and MOSFET drives and protections. . . . . . . . . . . . . . . . 119 2.10.1. Gate drive design . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119 2.10.2. Gate drive circuits. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122 2.10.3. MOSFET and IGBT protections . . . . . . . . . . . . . . . . . . . . 128 2.11. References. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130 Chapter 3. Series and Parallel Connections of MOS and IGBT . . . . . . . 133 Daniel CHATROUX , Dominique LAFORE and Jean-Luc SCHANEN 3.1. Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133 3.2. Kinds of associations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134 3.2.1. Increase of power. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134 3.2.2. Increasing performance . . . . . . . . . . . . . . . . . . . . . . . . . . 135 3.3. The study of associations: operation and parameter influence on imbalances in series and parallel. . . . . . . . . . . . . . . . . . . . . . . . . . 135 3.3.1. Analysis and characteristics for the study of associations . . . . . . 135 3.3.2. Static operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137 Table of Contents vii 3.3.3. Dynamic operation: commutation . . . . . . . . . . . . . . . . . . . . 140 3.3.4. Transient operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149 3.3.5. Technological parameters that influence imbalances. . . . . . . . . 151 3.4. Solutions for design. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152 3.4.1. Parallel association. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152 3.4.2. Series associations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161 3.4.3. Matrix connection of components . . . . . . . . . . . . . . . . . . . . 179 3.5. References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 182 Chapter 4. Silicon Carbide Applications in Power Electronics . . . . . . . . 185 Marie-Laure LOCATELLI and Dominique PLANSON 4.1. Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 185 4.2. Physical properties of silicon carbide . . . . . . . . . . . . . . . . . . . . 186 4.2.1. Structural features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 186 4.2.2. Chemical, mechanical and thermal features . . . . . . . . . . . . . . 189 4.2.3. Electronic and thermal features. . . . . . . . . . . . . . . . . . . . . . 188 4.2.4. Other “candidates” as semiconductors of power. . . . . . . . . . . . 195 4.3. State of the art technology for silicon carbide power components. . . . 296 4.3.1. Substrates and thin layers of SiC. . . . . . . . . . . . . . . . . . . . . 296 4.3.2. Technological steps for achieving power components . . . . . . . . 203 4.4. Applications of silicon carbide in power electronics. . . . . . . . . . . . 216 4.4.1. SiC components for high frequency power supplies . . . . . . . . . 216 4.4.2. SiC components for switching systems under high voltage and high power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 233 4.4.3. High energy SiC components for series protection systems. . . . . 249 4.5. Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 252 4.6. Acknowledgments. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 255 4.7. References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 255 Chapter 5. Capacitors for Power Electronics. . . . . . . . . . . . . . . . . . . 267 Abderrahmane BÉROUAL, Sophie GUILLEMET-FRITSCH and Thierry LEBEY 5.1. Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 267 5.2. The various components of the capacitor – description. . . . . . . . . . 268 5.2.1. The dielectric material. . . . . . . . . . . . . . . . . . . . . . . . . . . 269 5.2.2. The armatures. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 269 5.2.3. Technology of capacitors . . . . . . . . . . . . . . . . . . . . . . . . . 270 5.2.4. Connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 271 5.3. Stresses in a capacitor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 272 5.3.1. Stresses related to the voltage magnitude. . . . . . . . . . . . . . . . 272 5.3.2. Losses and drift of capacity. . . . . . . . . . . . . . . . . . . . . . . . 273 5.3.3. Thermal stresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 274

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Power Electronics Semiconductor Devices Edited by Robert Perret This page intentionally left blank Power Electronics Semiconductor Devices This page intentionally left blank Power Electronics Semiconductor Devices Edited by Robert Perret First published in France in 2003 and 2005 by Hermes Science/Lavoisier entitled: Mise en œuvre des composants électroniques de puissance and Interrupteurs électroniques de puissance © LAVOISIER, 2003, 2005 First published in Great Britain and the United States in 2009 by ISTE Ltd and John Wiley & Sons, Inc. Apart from any fair dealing for the purposes of research or private study, or criticism or review, as permitted under the Copyright, Designs and Patents Act 1988, this publication may only be reproduced, stored or transmitted, in any form or by any means, with the prior permission in writing of the publishers, or in the case of reprographic reproduction in accordance with the terms and licenses issued by the CLA. Enquiries concerning reproduction outside these terms should be sent to the publishers at the undermentioned address: ISTE Ltd John Wiley & Sons, Inc. 27-37 St George’s Road 111 River Street London SW19 4EU Hoboken, NJ 07030 UK USA www.iste.co.uk www.wiley.com © ISTE Ltd, 2009 The rights of Robert Perret to be identified as the author of this work have been asserted by him in accordance with the Copyright, Designs and Patents Act 1988. Library of Congress Cataloging-in-Publication Data Mise en œuvre des composants électroniques de puissance and Interrupteurs électroniques de puissance. English. Power electronics semiconductor devices / edited by Robert Perret. p. cm. Includes bibliographical references and index. ISBN 978-1-84821-064-6 1. Power electronics. 2. Power semiconductors. 3. Solid state electronics. I. Perret, Robert. II. Title. TK7881.15.M5713 2009 621.381'044--dc22 2009001021 British Library Cataloguing-in-Publication Data A CIP record for this book is available from the British Library ISBN: 978-1-84821-064-6 Printed and bound in Great Britain by CPI Antony Rowe, Chippenham and Eastbourne. Table of Contents Preface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xi Chapter 1. Power MOSFET Transistors. . . . . . . . . . . . . . . . . . . . . . 1 Pierre ALOÏSI 1.1. Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.2. Power MOSFET technologies. . . . . . . . . . . . . . . . . . . . . . . . . 5 1.2.1. Diffusion process. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 1.2.2. Physical and structural MOS parameters . . . . . . . . . . . . . . . . 7 1.2.3. Permanent sustaining current. . . . . . . . . . . . . . . . . . . . . . . 20 1.3. Mechanism of power MOSFET operation. . . . . . . . . . . . . . . . . . 23 1.3.1. Basic principle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 1.3.2. Electron injection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 1.3.3. Static operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 1.3.4. Dynamic operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 1.4. Power MOSFET main characteristics . . . . . . . . . . . . . . . . . . . . 34 1.5. Switching cycle with an inductive load . . . . . . . . . . . . . . . . . . . 36 1.5.1. Switch-on study. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 1.5.2.Switch-off study. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 1.6. Characteristic variations due to MOSFET temperature changes. . . . . 44 1.7. Over-constrained operations. . . . . . . . . . . . . . . . . . . . . . . . . . 46 1.7.1. Overvoltage on the gate . . . . . . . . . . . . . . . . . . . . . . . . . . 46 1.7.2. Over-current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 1.7.3. Avalanche sustaining. . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 1.7.4. Use of the body diode . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 1.7.5. Safe operating areas . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 1.8. Future developments of the power MOSFET. . . . . . . . . . . . . . . . 53 1.9. References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 vi Power Electronics Semiconductor Devices Chapter 2. Insulated Gate Bipolar Transistors. . . . . . . . . . . . . . . . . . 57 Pierre ALOÏSI 2.1. Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57 2.2. IGBT technology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58 2.2.1. IGBT structure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58 2.2.2. Voltage and current characteristics . . . . . . . . . . . . . . . . . . . 60 2.3. Operation technique. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63 2.3.1. Basic principle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63 2.3.2. Continuous operation . . . . . . . . . . . . . . . . . . . . . . . . . . . 64 2.3.3. Dynamic operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71 2.4. Main IGBT characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . 74 2.5 One cycle of hard switching on the inductive load . . . . . . . . . . . . . 75 2.5.1. Switch-on study. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76 2.5.2. Switch-off study . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78 2.6 Soft switching study. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86 2.6.1. Soft switching switch-on: ZVS (Zero Voltage Switching). . . . . . 86 2.6.2. Soft switching switch-off: ZCS (Zero Current Switching). . . . . . 88 2.7. Temperature operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94 2.8. Over-constraint operations. . . . . . . . . . . . . . . . . . . . . . . . . . . 98 2.8.1. Overvoltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98 2.8.2. Over-current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99 2.8.3. Manufacturer’s specified safe operating areas. . . . . . . . . . . . . 113 2.9. Future of IGBT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116 2.9.1. Silicon evolution . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116 2.9.2. Saturation voltage improvements . . . . . . . . . . . . . . . . . . . . 117 2.10. IGBT and MOSFET drives and protections. . . . . . . . . . . . . . . . 119 2.10.1. Gate drive design . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119 2.10.2. Gate drive circuits. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122 2.10.3. MOSFET and IGBT protections . . . . . . . . . . . . . . . . . . . . 128 2.11. References. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130 Chapter 3. Series and Parallel Connections of MOS and IGBT . . . . . . . 133 Daniel CHATROUX , Dominique LAFORE and Jean-Luc SCHANEN 3.1. Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133 3.2. Kinds of associations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134 3.2.1. Increase of power. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134 3.2.2. Increasing performance . . . . . . . . . . . . . . . . . . . . . . . . . . 135 3.3. The study of associations: operation and parameter influence on imbalances in series and parallel. . . . . . . . . . . . . . . . . . . . . . . . . . 135 3.3.1. Analysis and characteristics for the study of associations . . . . . . 135 3.3.2. Static operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137 Table of Contents vii 3.3.3. Dynamic operation: commutation . . . . . . . . . . . . . . . . . . . . 140 3.3.4. Transient operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149 3.3.5. Technological parameters that influence imbalances. . . . . . . . . 151 3.4. Solutions for design. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152 3.4.1. Parallel association. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152 3.4.2. Series associations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161 3.4.3. Matrix connection of components . . . . . . . . . . . . . . . . . . . . 179 3.5. References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 182 Chapter 4. Silicon Carbide Applications in Power Electronics . . . . . . . . 185 Marie-Laure LOCATELLI and Dominique PLANSON 4.1. Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 185 4.2. Physical properties of silicon carbide . . . . . . . . . . . . . . . . . . . . 186 4.2.1. Structural features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 186 4.2.2. Chemical, mechanical and thermal features . . . . . . . . . . . . . . 189 4.2.3. Electronic and thermal features. . . . . . . . . . . . . . . . . . . . . . 188 4.2.4. Other “candidates” as semiconductors of power. . . . . . . . . . . . 195 4.3. State of the art technology for silicon carbide power components. . . . 296 4.3.1. Substrates and thin layers of SiC. . . . . . . . . . . . . . . . . . . . . 296 4.3.2. Technological steps for achieving power components . . . . . . . . 203 4.4. Applications of silicon carbide in power electronics. . . . . . . . . . . . 216 4.4.1. SiC components for high frequency power supplies . . . . . . . . . 216 4.4.2. SiC components for switching systems under high voltage and high power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 233 4.4.3. High energy SiC components for series protection systems. . . . . 249 4.5. Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 252 4.6. Acknowledgments. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 255 4.7. References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 255 Chapter 5. Capacitors for Power Electronics. . . . . . . . . . . . . . . . . . . 267 Abderrahmane BÉROUAL, Sophie GUILLEMET-FRITSCH and Thierry LEBEY 5.1. Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 267 5.2. The various components of the capacitor – description. . . . . . . . . . 268 5.2.1. The dielectric material. . . . . . . . . . . . . . . . . . . . . . . . . . . 269 5.2.2. The armatures. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 269 5.2.3. Technology of capacitors . . . . . . . . . . . . . . . . . . . . . . . . . 270 5.2.4. Connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 271 5.3. Stresses in a capacitor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 272 5.3.1. Stresses related to the voltage magnitude. . . . . . . . . . . . . . . . 272 5.3.2. Losses and drift of capacity. . . . . . . . . . . . . . . . . . . . . . . . 273 5.3.3. Thermal stresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 274

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