Nanoscaled Semicond uctor-on-Insulator Structures and Devices NATO Science for Peace and Security Series This Series presents the results of scientific meetings supported under the NATO Programme: Science for Peace and Security (SPS). The NATO SPS Programme supports meetings in the following Key Priority areas: (1) Defence Against Terrorism; (2) Countering other Threats to Security and (3)NATO, Partner and Mediterranean Dialogue Country Priorities. The types of meeting supported are generally "Advanced Study Institutes" and "Advanced Research Workshops". The NATO SPS Series collects together the results of these meetings.The meetings are co- organized by scientists from NATO countries and scientists from NATO's "Partner" or "Mediterranean Dialogue" countries.The observations and recommendations made at the meetings, as well as the contents of the volumes in the Series, reflect those of parti- cipants and contributors only;they should not necessarily be regarded as reflecting NATO views or policy. Advanced Study Institutes (ASI) are high-level tutorial courses intended to convey the latest developments in a subject to an advanced-level audience Advanced Research Workshops (ARW) are expert meetings where an intense but informal exchange of views at the frontiers of a subject aims at identifying directions for future action Following a transformation of the programme in 2006 the Series has been re-named and re-organised. Recent volumes on topics not related to security, which result from meetings supported under the programme earlier, may be found in the NATO Science Series. The Series is published by IOS Press, Amsterdam, and Springer, Dordrecht, in conjunction with the NATO Public Diplomacy Division. Sub-Series A. Chemistry and Biology Springer B. Physics and Biophysics Springer C. Environmental Security Springer D. Information and Communication Security IOS Press E. Human and Societal Dynamics IOS Press http://www.nato.int/science http://www.springer.com http://www.iospress.nl Series B:Physics and Biophysics Nanoscaled Semiconductor-on- Insulator Structures and Devices Edited by S. Hall University of Liverpool Liverpool, United Kingdom A.N. Nazarov Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, Kyiv, Ukraine V.S. Lysenko Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, Kyiv, Ukraine Published in cooperation with NATO Public Diplomacy Division Proceedings of the NATO Advanced Research Workshop on Nanoscaled Semiconductor-on-Insulator Structures and Devices Big Yalta, Ukraine 15 – 19 October 2006 A C.I.P. Catalogue record for this book is available from the Library of Congress. ISBN 978-1-4020-6379-4 (PB) ISBN 978-1-4020-6378-7 (HB) ISBN 978-1-4020-6380 -0 (e-book) Published by Springer, P.O. Box 17, 3300 AADordrecht, The Netherlands. www.springer.com Printed on acid-free paper All Rights Reserved © 2007 Springer No part of this work may be reproduced, stored in a retrieval system, or transmitted in any form or by any means, electronic, mechanical, photocopying, microfilming, recording or otherwise, without written permission from the Publisher, with the exception of any material supplied specifically for the purpose of being entered and executed on a computer system, for exclusive use by the purchaser of the work. INTRODUCTION This proceedings volume constitutes an archive of the contributions of the key-speakers who attended the NATO Advanced Research Workshop on “Nanoscaled Semiconductor-On-Insulator Structures and devices” held in the Tourist and Recreation Centre “Sudak” (Crimea, Ukraine) from 15 to 19 October 2006. The semiconductor industry has sustained a very rapid growth during the last three decades through impressive technological developments which have resulted in products with higher performance and lower cost per function. After many years of development it is now confidently predicted that semiconductor-on-insulator materials will enter and increasingly be used by manufacturing industry. The wider use of semiconductor (espe- cially silicon) on insulator materials will not only enable the benefits of these materials to be demonstrated but, also, will drive down the cost of substrates which, in turn, will stimulate the development of other novel devices and applications. Thus the semiconductor-on-insulator materials of today are not only the basis for modern microelectronics but also for future nanoscale devices and ICs. In itself this trend will encourage the promotion of the skills and ideas generated by researchers in the Former Soviet Union and Eastern Europe. Indeed, one of the goals of this Workshop is to promote the development of SOI technologies worldwide. This volume contains mainly the review manuscrips composed on the basis of oral and poster papers presented during the four-day meeting, under the heading of: • Nanoscaled SOI Material and Device Technologies; • Physics of Novel Nanoscaled SOI Devices; • Reliability and Characterization of Nanoscaled SOI devices; • Theory and Modeling of Nanoscaled Devices. These high-quality papers were presented by researchers from Japan, USA, Western Europe and the Eastern European countries of the Former Soviet Union thereby fulfilling a key objective of the Workshop which was the development of world-wide contacts between researchers in the attendees countries. v vi INTRODUCTION The meeting thus successfully achieved its scientific and networking goals and the attendees wish to express their gratitude to the NATO Programme Security through Science and Network of Excellence Project of European Community “Silicon-Based Nanodevices”, whose financial support made the meeting possible; and National Academy of Sciences of Ukraine, Ministry of Science and Education of Ukraine and the Lashkaryov Institute of Semiconductor Physics, NASU who provided local support. We would like to thank the Agency of International Cooperation “Optima” whose Director Mariya Miletska helped us to organize this Workshop in a professional manner. Our sincere gratitude also goes to Dr. Ya. Vovk, A. Rusavsky, Dr. V. Kilchytska, V. Stepanov, V. Torbin, Dr. A. Stronskii, Dr. Yu. Gomenyuk, Dr. I. Osiyuk, Dr. T. Rudenko, Dr. I. Tyagulskii, V. Smirnaya, J. Cowan and A. Winker for their clerical and technical assistance. A final special thanks to Mr. Yurii Houk for his dedication in compiling this book and for many other practical contributions. Steve Hall Alexei Nazarov and Liverpool, United Kingdom Vladimir Lysenko Kyiv, Ukraine INTRODUCTION vii viii INTRODUCTION INTRODUCTION ix CONTENTS INTRODUCTION..............................................................................v Nanoscaled SOI Material and Device Technologies Status and trends in SOI nanodevices.................................................3 F. Balestra Non-planar devices for nanoscale CMOS........................................19 M.C. Lemme, H.D.B. Gottlob, H. Kurz High-κ dielectric stacks for nanoscaled SOI devices.......................33 S. Hall, O. Buiu, I.Z. Mitrovic, Y. Lu, W.M. Davey Nanoscaled semiconductor heterostructures for CMOS transistors formed by ion implantation and hydrogen transfer.........59 V. Popov, I. Tyschenko, A. Cherkov, M. Voelskow Fluorine –vacancy engineering: A viable solution for dopant diffusion suppression in SOI substrates............................................73 H.A.W. El Mubarek and P. Ashburn Suspended Silicon-On-Insulator nanowires for the fabrication of quadruple gate MOSFETs............................................................89 V. Passi, B. Olbrechts, J.-P. Raskin, J. Bolten, T. Mollenhauer, T. Wahlbrink, M.C. Lemme, H. Kurz Physics of Novel Nanoscaled SemOI Devices Integration of silicon single-electron transistors operating at room temperature..............................................................................97 T. Hiramoto SiGe nanodots in electro-optical SOI devices................................113 A.V. Dvurechenskii, A.I. Yakimov, N.P. Stepina, V.V. Kirienko, P.L. Novikov Nanowire quantum effects in trigate SOI MOSFETs.....................129 J.-P. Colinge xi