Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices Edited by Alexei N. Nazarov Jean-Pierre Raskin Nanoscaled Semiconductor-on- Insulator Materials, Sensors and Devices Selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on- Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine Edited by Alexei N. Nazarov and Jean-Pierre Raskin Copyright  2011 Trans Tech Publications Ltd, Switzerland All rights reserved. No part of the contents of this publication may be reproduced or transmitted in any form or by any means without the written permission of the publisher. Trans Tech Publications Ltd Kreuzstrasse 10 CH-8635 Durnten-Zurich Switzerland http://www.ttp.net Volume 276 of Advanced Materials Research ISSN 1022-6680 Full text available online at http://www.scientific.net Distributed worldwide by and in the Americas by Trans Tech Publications Ltd Trans Tech Publications Inc. Kreuzstrasse 10 PO Box 699, May Street CH-8635 Durnten-Zurich Enfield, NH 03748 Switzerland USA Phone: +1 (603) 632-7377 Fax: +41 (44) 922 10 33 Fax: +1 (603) 632-5611 e-mail: [email protected] e-mail: [email protected] Preface The proceedings cover main papers presented at the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, which are related to: 1. technology of semiconductor-on-insulator structures and devices; 2. physics of new SOI devices; 3. SOI sensors and MEMS; 4. nanodots, nanowires and nanofilms. The first part shows a wide variety of SemOI-based structures such as ZnO-on-Insulator, a-SiC-on-Si oxide, graphite inner films fabricated by ion implantation and others. The second part includes articles presenting new devices based on the impact ionization near the source junction, modeling of charge transport in nanoscaled SOI MOSFETs, electrical properties of SOI MOSFETs with LaLuO high-k gate dielectric, study of 3 neutron effects on the behavior of nanometer scale SOI devices. The third part considers various types of SOI sensors and MEMS, their features and applications, and finally the fourth part is related to fabrication and properties of quantum dimensional structures such as nanowires and nanodots. We hope this issue will be useful for a wide audience of readers. Committees Editors: Prof. Alexei N. Nazarov, Lashkayov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, UKRAINE Prof. Jean-Pierre Raskin, Universtite catholique de Louvain, Electrical Engineering Department, Louvain-la-Neuve, BELGIUM International Organizing Committee F. Balestra (IMEP, Grenoble, France) J.-P. Colinge (Tyndall National Institute, Cork, Ireland) F. Gamiz (Granada University, Granada, Spain) S. Hall (Univiversity of Liverpool, Liverpool, UK) A. A. Orlikovsky (Institute of Physics and Technology RAS, Moscow, Russia) V. S. Lysenko (ISP NASU, Kyiv, Ukraine) Sponsors: National Academy of Sciences of Ukraine Exchange Program of NANOSIL European Network of Excellence of the 7th Framework Program Thematic Network EUROSOI Lashkaryov Institute of Semiconductor Physics, NASU, Kyiv, Ukraine Table of Contents Preface and Committee Members I. Technology of Semiconductor-On-Insulator Structures and Devices ZnO Films and Crystals on Bulk Silicon and SOI Wafers: Formation, Properties and Applications E. Chubenko, A. Klyshko, V. Bondarenko, M. Balucani, A.I. Belous and V. Malyshev 3 Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO /Si Structures 2 S.O. Gordienko, A.N. Nazarov, A.V. Rusavsky, A.V. Vasin, N. Rymarenko, V.G. Stepanov, T.M. Nazarova and V.S. Lysenko 21 Diamond – Graphite Heterostructures Formed by Nitrogen and Hydrogen Implantation and Annealing V.P. Popov, L.N. Safronov, O.V. Naumova, D.V. Nikolaev, Y.N. Palyvanov and I.N. Kupriyanov 27 Hydrogen Gettering within Processed Oxygen-Implanted Silicon A. Misiuk, A. Barcz, J. Bak-Misiuk, A.G. Ulyashin and P. Romanowski 35 II. Physics of New SOI Devices Gate Control of Junction Impact Ionization Avalanche in SOI MISFETs: Theoretical Model V. Dobrovolsky, F. Sizov and S. Cristoloveanu 43 Semi-Analytical Models of Field-Effect Transistors with Low-Dimensional Channels A. Kohmyakov and V. Vyurkov 51 Model of Nonuniform Channel for the Charge Carrier Transport in Nanoscale FETs V.P. Popov and M.A. Ilnitsky 59 High Temperature Effects on Harmonic Distortion in Submicron SOI Graded-Channel MOSFETs M. Emam, M.A. Pavanello, F. Danneville, D. Vanhoenacker-Janvier and J.P. Raskin 67 Some Issues of Modeling the Double Barrier Metal-Oxide-Semiconductor Tunnel Structures B. Majkusiak and A. Mazurak 77 Electrical Properties of High-K LaLuO Gate Oxide for SOI MOSFETs 3 Y.Y. Gomeniuk, Y.V. Gomeniuk, A.N. Nazarov, P.K. Hurley, K. Cherkaoui, S. Monaghan, P.E. Hellström, H.D.B. Gottlob, J. Schubert and J.M.J. Lopes 87 Effects of High–Energy Neutrons on Advanced SOI MOSFETs V. Kilchytska, J. Alvarado, O. Militaru, G. Berger and D. Flandre 95 III. SOI Sensors and MEMS Polysilicon on Insulator Structures for Sensor Application at Electron Irradiation & Magnetic Fields A. Druzhinin, I. Marymova, I. Kogut and Y. Khoverko 109 On-Chip Tensile Testing of the Mechanical and Electro-Mechanical Properties of Nano- Scale Silicon Free-Standing Beams U. Bhaskar, V. Passi, A. Zulfiqar, U. Södervall, B. Nilsson, G. Petersson, M. Hagberg, T. Pardoen and J.P. Raskin 117 Non-Standard FinFET Devices for Small Volume Sample Sensors M. Zaborowski, D. Tomaszewski, L. Łukasiak and A. Jakubowski 127 3D SOI Elements for System-on-Chip Applications I.T. Kogut, A.A. Druzhinin and V.I. Holota 137 Routes towards Novel Active Pressure Sensors in SOI Technology B. Olbrechts, B. Rue, T. Pardoen, D. Flandre and J.P. Raskin 145 b Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices IV. Nanodots, Nanowires and Nanofilms Photovoltage Performance of Ge/Si Nanostructures Grown on Intermediate Ultrathin SiO X Layers A.O. Podolian, V.V. Kuryliuk, A.B. Nadtochiy, S.V. Kondratenko, O.A. Korotchenkov, Y.N. Kozyrev, V.K. Sklyar, M.Y. Rubezhanska and V.S. Lysenko 159 Interface and Bulk Properties of High-K Gadolinium and Neodymium Oxides on Silicon Y.Y. Gomeniuk, Y.V. Gomeniuk, A.N. Nazarov, V.S. Lysenko, H.J. Osten and A. Laha 167 Effect of Ge Nanoislands on Lateral Photoconductivity of Ge-SiO -Si Structures X V.S. Lysenko, Y.V. Gomeniuk, Y.N. Kozyrev, M.Y. Rubezhanska, V.K. Skylar, S.V. Kondratenko, Y.Y. Melnichuk and C. Teichert 179 A Model of the Evolution of the Au/Si Droplet Ensembles during Rapid Thermal Annealing at High Temperatures A.V. Sarikov, A.I. Klimovskaya, O. Oberemok, O. Lytvyn and O. Stadnik 187 The Nanometer Scaled Defects Induces with the Dislocation Motion in II-VI Insulated Semiconductors V.N. Babentsov, V.A. Boyko, A.F. Kolomys, G.A. Shepelski, V.V. Strelchuk and N.I. Tarbaev 195 I. Technology of Semiconductor-On-Insulator Structures and Devices