K. Ploog K. Graf Molecular Beam Epitaxy of III-V Compounds A Comprehensive Bibliography 1958-1983 Springer-Verlag Berlin Heidelberg New York Tokyo 1984 Dr. Klaus Ploog Klaus Graf Max-Planck-lnstitut fOr FestkOrperforschung, HeisenbergstraBe 1 0-7000 Stuttgart 80, Fed. Rep. of Germany ISBN-13: 978-3-540-13177-9 e-ISBN-13: 978-3-642-69580-3 001: 10.1007/978-3-642-69580-3 This work is subject to copyright. All rights are reserved, whether the whole or part of the material is concerned, specifically those oitranslation, reprinting, reuse of illustrations, broadcasting, reproduction by photocopying machine or similar means, and storage in data banks. Under§ 54 olthe German Copy right Law where copies are made for other than private use, a fee is payable to "Verwertungsgesellschaft Wort", Munich. © by Springer-Verlag Berlin Heidelberg 1984 The use of registered names, trademarks, etc. in this publication does not imply, even in the absence ofa specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. Preface Epitaxial growth and electronic properties of semiconductor thin films are becoming increasingly important for fundamental and applied research and for device applications. This book contains a comprehensive collection of over 1500 references covering the first 25 years of molecular beam epitaxy of III-V compound semiconductors. Molecular beam epitaxy is a versatile thin film growth technique which emerged from the 'Three-temperature method' de veloped in the 1950s and from surface kinetic studies performed in the 1960s. III-V semiconductors such as GaAs, AlAs, (Galn)As, InP, etc., play an important role in the application to optoelectronic and high-speed devices. Over the past three years the technology of molecular beam epitaxy has spread rapidly to most major research and development laboratories through out the world, and an increasing number of highly refined III-V semiconduc tor structures with exactly tailored electronic properties have been pro duced and explored for fundamental studies as well as for device appl ica tion. The comprehensive bibliography on this dramatically expanding topic helps chemists, engineers, materials scientists, and physicists working in semiconductor research and development areas to sort out the important lit erature of their particular interest. A direct reproduction of the output of a computer printer has been used to enable rapid publication and to keep printing costs low. The work was sponsored by the 'Bundesministerium fUr Forschung und Technologie' of the Federal Republic of Germany. Stuttgart, January 1984 K. Ploog . K. Graf Subject Categories and References Introduction ................... Year 1977 . .................... 33 Period 1958-1970 .••••••••••••••• 3 Year 1978 ..................... 47 Year 1971 ...... .... ........... 7 Year 1979 ..................... 49 Year 1972 ............ ......... 77 Year 1980 .. , .................. 59 Year 1973 ..................... 73 Year 1981 ..................... 75 Year 19711 ..................... 77 Year 1982 ..................... 707 Year 1975 .. .......... ..... .... 27 Year 1983 ..................... 749 Year 1976 ..................... 27 Author Index •••••••••••••••••• 203 Introduction 1 Introduction Molecular beam epitaxy (MBE) has now become a viable and strongly competi tive thin-film growth technique in many research and development laborato ries, and a variety of materials, including semiconductors, metals and in sulators, have been grown as epitaxial films. MBE growth of III-V compound semiconductors and investigation of the tailored electronic properties of refined semiconductor structures have received most attention. In the past three years interest in molecular beam epitaxy has expanded dramatically, and the number of MBE-related technical papers published per year is growing exponentially (Fig. 1). This ever-increasing flood of papers makes it hard to follow up, particularly for young materials scientists newly entering this very exciting field. We have, therefore, compiled a bibl iography of 5PU0B0UrC-A_T_IO_N_S_ ______________________________________ ==~ NUMBER OF PUBLICATIONS ON MBE 450 400 350 300 250 200 150 100 50 YEAR 1""'9- t. Diagram of the number of tecbnical papers on MBE of lll-V compoonds"published in the perrod 1972 to'1.981. Tile -actual number in 1983 will. increase by approximately 10 percent, be cause the collection of citations WiS finished by mid-December 1983 2 Introduction over 1600 references spanning the first 25 years of activities in molecular beam epitaxy of III-V compounds. References are listed with the title, using first an annual principle of classification, with the exception of early works, which are grouped together up to 1970. Within this annual classifi cation, papers are 1i sted alphabetically for each year by first authors in chronological succession. All citations are numbered consecutively. Cita tions are limited to papers that had been published up to mid-December 1983. English translations are cited if available. Review papers are marked by "R" below the number. In addition to the annual classification, the papers are subdivided into eleven subject categories that are cross-referenced. The categories - if available in the respective year - are placed in front of the alphabetic list. Each category is followed by the reference numbers of the corresponding year. The subject categories used in the bibliography are: • AlAs, GaAs, (A1Ga)As • GaSb, InAs, Ga(AsSb), (Galn)As • InP, (AlIn)As, (Galn)As, (Galn)(PAs) • Growth equipment • Growth mechanism, surface analysis • Periodic multilayer structures • Modulation doping • Electrical properties • Optical properties • Microwave devices • Optoelectronic devices Following the references, all authors with their respective reference num bers are listed alphabetically to conclude the bibliography. In addition to the experimental work a certain number of theoretical papers dealing with electronic properties of MBE-grown quantum well structures and with the quantized Hall effect are included in the bibliography and marked by "T". Period 1958-1970 3 Subject Categories and References Period 1958-1970 AlAs, BaAs, (AIGa)As 2,4,5,6,7,B,9,11,13 SaSb, InAs, Sa(AsSb), (SaIn)As 1,3 Growth Equipment 1,2,3,4,5,7,9 Growth Mechanism, Surface Analysis 4,5,6, B, 9,10,11 Periodic Multilayer Structure 12,13 Electrical Properties 1,2,7,13 4 Ref. 1-11 1 Suenther,K.S. Aufdampfschichten aus halbleitenden III-V-Verbindungen Z. Naturforschg. 13a 1081-1089 (1958) 2 Davey,J.E., Pankey,T. Structural and optical characteristics of thin BaAs films J. Appl. Phys. 35 2203-2209 (1964) 3 Suenther,K.S. R Interfacial and condensation processes occurring with multicomponent vapours in "The use of thin films in physical investigations", Ed J.C. Anderson (Academic, London, 1966) 213-232 (1966) 4 Arthur,J.R.,Jr. Vapor pressures and phase equilibria in the Ba-As system J. Phys. Chem. Solids 28 2257-2267 (1967) 5 Arthur,J.R.,Jr. Interaction of As2, P2 and Bi molecular beams with BaAs and BaP (111) surfaces In: "Proc. Conf. Struct. Chem. Solid Surfaces", Ed. B.A. Somorjai (Wiley, New York, 1967) 46-1- 46-17 (1967) 6 Arthur,J.R.,Jr. Interaction of Ba and As2 molecular beams with BaAs surfaces J. Appl. Phys. 39 4032-4034 (1968) 7 Davey,J.E., Pankey,T. Epitaxial BaAs films deposited by vacuum evaporation J. Appl. Phys. 39 1941-1948 (1968) B Arthur,J.R.,Jr., LePore,J.J. BaAs, BaP, and BaAs(x)P(l-x) epitaxial films grown by molecular beam deposition J. Vac. Sci. Technol. 6 545-548 (1969) 9 Cho,A.V. Epitaxy by periodic annealing Surf. Sci. 17 494-503 (1969) 10 Cho,A.V. Epitaxial growth of gallium phosphide on cleaved and polished (111) calcium fluoride J. Appl. Phys. 41 782-786 (1970) 11 Cho,A.V. Morphology of epitaxial growth of BaAs by molecular beam method: The observation of surface structures J. Appl. Phys. 41 2780-2786 (1970) Ref. 12-13 5 12 Esaki,L., Tsu,R. T Superlattice and negative differential conductivity in semiconductors IBM J. Res. Develop. 14 61-65 (1970) 13 Lebwohl,P.A., Tsu,R. T Electrical transport properties in a superlattice J. Appl. Phys. 41 2664-2667 (1970)