Lecture Notes in Electrical Engineering 533 Subhash Chandra Bera Microwave Active Devices and Circuits for Communication Lecture Notes in Electrical Engineering Volume 533 Board of Series editors Leopoldo Angrisani, Napoli, Italy Marco Arteaga, Coyoacán, México Bijaya Ketan Panigrahi, New Delhi, India Samarjit Chakraborty, München, Germany Jiming Chen, Hangzhou, P.R. China Shanben Chen, Shanghai, China Tan Kay Chen, Singapore, Singapore Ruediger Dillmann, Karlsruhe, Germany Haibin Duan, Beijing, China Gianluigi Ferrari, Parma, Italy Manuel Ferre, Madrid, Spain Sandra Hirche, München, Germany Faryar Jabbari, Irvine, USA Limin Jia, Beijing, China Janusz Kacprzyk, Warsaw, Poland Alaa Khamis, New Cairo City, Egypt Torsten Kroeger, Stanford, USA Qilian Liang, Arlington, USA Tan Cher Ming, Singapore, Singapore Wolfgang Minker, Ulm, Germany Pradeep Misra, Dayton, USA Sebastian Möller, Berlin, Germany Subhas Mukhopadhyay, Palmerston North, New Zealand Cun-Zheng Ning, Tempe, USA Toyoaki Nishida, Kyoto, Japan Federica Pascucci, Roma, Italy Yong Qin, Beijing, China Gan Woon Seng, Singapore, Singapore Germano Veiga, Porto, Portugal Haitao Wu, Beijing, China Junjie James Zhang, Charlotte, USA LectureNotesinElectricalEngineering(LNEE)isabookserieswhichreportsthe latest research and developments in Electrical Engineering, namely: (cid:129) Communication, Networks, and Information Theory (cid:129) Computer Engineering (cid:129) Signal, Image, Speech and Information Processing (cid:129) Circuits and Systems (cid:129) Bioengineering (cid:129) Engineering The audience for the books in LNEE consists of advanced level students, researchers,andindustryprofessionalsworkingattheforefrontoftheirfields.Much like Springer’s other Lecture Notes series, LNEE will be distributed through Springer’s print and electronic publishing channels. More information about this series at http://www.springer.com/series/7818 Subhash Chandra Bera Microwave Active Devices and Circuits for Communication 123 SubhashChandra Bera Space Applications Centre IndianSpaceResearchOrganization(ISRO) Ahmedabad, Gujarat, India ISSN 1876-1100 ISSN 1876-1119 (electronic) Lecture Notesin Electrical Engineering ISBN978-981-13-3003-2 ISBN978-981-13-3004-9 (eBook) https://doi.org/10.1007/978-981-13-3004-9 LibraryofCongressControlNumber:2018958497 ©SpringerNatureSingaporePteLtd.2019 Thisworkissubjecttocopyright.AllrightsarereservedbythePublisher,whetherthewholeorpart of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission orinformationstorageandretrieval,electronicadaptation,computersoftware,orbysimilarordissimilar methodologynowknownorhereafterdeveloped. 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Theregisteredcompanyaddressis:152BeachRoad,#21-01/04GatewayEast,Singapore189721, Singapore To Him who gives me inspiration and patience Foreword Ithasbeenapleasureformetoseethisbooktitled‘MicrowaveActiveDevicesand Circuits for Communication’ written by Subhash Chandra Bera based on his long experienceonthedesignanddevelopmentofon-boardcommunicationcircuitsand systems at Space Applications Centre, ISRO, Ahmedabad. Thisbookprovidesextensivecoverageinthefieldofmicrowaveengineeringfor graduatestudents,practicalcircuitdesignersandresearchers.Thisbookbeginswith basics of device physics and ends with the design of microwave communication systems through detailed design, analysis and realization of different circuits and systems. Apart from classical topics in microwave active devices such as p-i-n diode, Schottky diode, step recovery diode, BJT, HBT, MESFET, HFET and various microwave circuits such as switch, phase shifter, attenuator, amplifier, multiplier, mixer, the coverage extends to some modern topics such as Class-F power amplifier, direct frequency modulator, linearizer, equalizer. The written text ofeachtopicissupplementedwithsuitablediagrams,andeachchapterhasvarious types of solved problems for clear understanding. It is hoped that this book will be very useful for graduate students, circuit designers and researchers. Ahmedabad, India Tapan Misra May 2018 Distinguished Scientist Director, Space Applications Centre (ISRO) vii Preface This book is about active devices and circuits for microwave communications appropriateforundergraduateandpostgraduatestudents,practicalcircuitdesigners and researchers in the field of electronics and communication engineering. It pre- sentsthedesignandanalysisofvariouslinearandnonlinearcircuitsformicrowave communication systems after discussing the working principle and behaviour of microwave diodes and transistors. This book begins with the basics of device physics and ends with the design of microwave communication systems through detailed design, analysis and realization of different circuits and systems. Though this bookiswrittenfocusingon microwavecommunications,much ofthematerial ofthisbookisentirelygenericandwillbeusefulforothermicrowaveapplications. This book starts with describing the diodes which are omnipresent in all solid-statecircuitsacrossallthefrequencyrangesstartingfromDCtoterahertzeven extending to optical frequency range as an isolated diode or as a part of other devices. Proper understanding about diodes leads to ease of understanding about other devices such as different types of bipolar and unipolar transistors in their homo-junction and hetero-junction structures which are discussed subsequently. Schottky, p-i-n, step recovery and tunnel diodes are popularly used in linear and nonlinear microwave communication circuits such as variable attenuator, power limiter,phaseshifter,linearizer,frequencymultiplier,mixerfortheirhigh-frequency performance and simplicity in operation. With the advancement of material tech- nologies, there are various modern transistors such as hetero-junction bipolar and field effect transistors based on GaAs, InP and GaN technologies. These devices offer very high-frequency performance with low noise figure and high-power- handlingcapabilitieswithdifferentdevicestructuresandcircuitconfigurations.DC biasingcircuitsforthediodesandtransistorsareveryrelevantwhichdeterminethe RF performance including temperature behaviour of the circuits. This book also addresses the temperature behaviour and compensation mechanism of the micro- wave circuits for practical applications. ix x Preface Thisbookhasevolvedfromtheauthor’sdesignanddevelopmentexperienceon microwavecircuitsandsystemsforIndiannationalsatellitecommunicationsystems at Space Applications Center, Indian Space Research Organization (ISRO), India. This book is believed to be a useful one for students and microwave circuit designers. Any suggestions for improvement of the quality of this book would be highly appreciated. Ahmedabad, India Subhash Chandra Bera Contents 1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 Microwave Communications . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.2 Microwave Active Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 1.3 Microwave Active Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 1.4 Microwave Circuit Analysis and Measurements . . . . . . . . . . . . 9 1.5 Book Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2 P-I-N Diode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2.2 Basics of P-I-N Diode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2.3 P-I-N Diode Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2.4 Nonlinearity of P-I-N Diode . . . . . . . . . . . . . . . . . . . . . . . . . . 19 2.5 Temperature Behaviour of P-I-N Diode . . . . . . . . . . . . . . . . . . 20 2.6 Temperature-Invariant RF Resistance of P-I-N Diode . . . . . . . . 22 References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 3 Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 3.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 3.2 Basics of Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 3.3 Schottky Diode Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 36 3.4 Temperature Behaviour of Schottky Diodes . . . . . . . . . . . . . . . 39 3.5 Temperature Invariant RF Resistance. . . . . . . . . . . . . . . . . . . . 41 References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 4 Special Microwave Diodes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 4.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 4.2 Step Recovery Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 4.2.1 Characteristic of SRD. . . . . . . . . . . . . . . . . . . . . . . . . 49 xi