It C\/6lA/ W/OKC BINDER-READY EDITION: Flexible format at an affordable price A SEDRA/SMITH Microelectronic Circuits EIGHTH EDITION ADEL S. SEDRA I KENNETH C. SMITH I TONY CHAN CARUSONE I VINCENT GAUDET OXJFORD UNIVERSITY PRESS Not for Profit. All for Education. Oxford University Press USA is a not-for-profit publisher dedicated to offering the highest quality textbooks at the best possible prices. We believe that it is important to provide everyone with access to superior textbooks at affordable prices. Oxford University Press textbooks are 30%-70% less expensive than comparable books from commercial publishers. The press is a department of the University of Oxford, and our publishing proudly serves the university’s mission: promoting excellence in research, scholarship, and education around the globe. 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Sedra University of Waterloo Kenneth C. Smith University of Toronto Tony Chan Carusone University of Toronto Vincent Gaudet University of Waterloo New York Oxford OXFORD UNIVERSITY PRESS Oxford University Press is a department of the University of Oxford. It furthers the University’s objective of excellence in research, scholarship, and education by publishing worldwide. Oxford is a registered trade mark of Oxford University Press in the UK and certain other countries. Published in the United States of America by Oxford University Press 198 Madison Avenue, New York, NY 10016, United States of America. Copyright © 2020, 2015, 2010, 2004, 1998 by Oxford University Press; 1991, 1987 Holt, Rinehart, and Winston, Inc.; 1982 CBS College Publishing For titles covered by Section 112 of the US Higher Education Opportunity Act, please visit www.oup.com/us/he for the latest information about pricing and alternate formats. All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted, in any form or by any means, without the prior permission in writing of Oxford University Press, or as expressly permitted by law, by license, or under terms agreed with the appropriate reproduction rights organization. Inquiries concerning reproduction outside the scope of the above should be sent to the Rights Department, Oxford University Press, at the address above. You must not circulate this work in any other form and you must impose this same condition on any acquirer. Library of Congress Cataloging-in-Publication Data Names: Sedra, Adel S., author. | Smith, Kenneth C. (Kenneth Carless), author. | Carusone, Tony Chan, author. | Gaudet, Vincent, author. Title: Microelectronic circuits / Adel S. Sedra, University of Waterloo, Kenneth C. Smith, University of Toronto, Tony Chan Carusone, University of Toronto, Vincent Gaudet, University of Waterloo. Description: Eighth edition. | New York, NY: Oxford University Press, [2020] | Includes bibliographical references and index. Identifiers: LCCN 2019017349 | ISBN 9780190853464 (acid-free paper) Subjects: LCSH: Electronic circuits. | Microelectronics. Classification: LCC TK7867 .S39 2020 | DDC 621.3815 dc23 LC record available at https://lccn.loc.gov/2019017349 Printing number: 98765432 1 Printed by LSC Communications, United States of America CONTENTS IN BRIEF Tables xiv Historical Notes xv Preface xvii PARTI DEVICES AND BASIC CIRCUITS 2 1 Signals and Amplifiers 4 2 Operational Amplifiers 58 3 Semiconductors 136 4 Diodes 174 5 MOS Field-Effect Transistors (MOSFETs) 244 6 Bipolar Junction Transistors (BJTs) 304 7 Transistor Amplifiers 365 PART II ANALOG INTEGRATED CIRCUITS 498 8 Building Blocks of Integrated-Circuit Amplifiers 500 9 Differential and Multistage Amplifiers 575 10 Frequency Response 673 11 Feedback 781 12 Output Stages and Power Amplifiers 887 13 Operational-Amplifier Circuits 936 14 Filters 1004 15 Oscillators 1066 PART III DIGITAL INTEGRATED CIRCUITS 1108 16 CMOS Digital Logic Circuits 1110 17 Digital Design: Power, Speed, and Area 1149 18 Memory and Clocking Circuits 1191 Appendices A-L Summary Tables Index IN-1 V CONTENTS Tables xiv 2 Operational Amplifiers 58 Historical Notes xv Introduction 59 Preface xvii 2.1 The Ideal Op Amp 59 2.1.1 The Op-Amp Terminals 59 2.1.2 Function and Characteristics of the part I DEVICES AND BASIC Ideal Op Amp 60 CIRCUITS 2 2.1.3 Differential and Common-Mode Signals 62 1 Signals and Amplifiers 4 2.2 The Inverting Configuration 64 Introduction 5 2.2.1 The Closed-Loop Gain 64 1.1 Signals 6 2.2.2 Effect of Finite Open-Loop Gain 66 1.2 Frequency Spectrum of Signals 10 1.3 Analog and Digital Signals 13 2.2.3 Input and Output Resistances 68 1.4 Amplifiers 16 2.2.4 An Important Application: The Weighted Summer 72 1.4.1 Signal Amplification 16 2.3 The Noninverting Configuration 74 1.4.2 Amplifier Circuit Symbol 17 2.3.1 The Closed-Loop Gain 74 1.4.3 Voltage Gain 17 2.3.2 Effect of Finite Open-Loop 1.4.4 Power Gain and Current Gain 18 Gain 76 1.4.5 Expressing Gain in Decibels 18 2.3.3 Input and Output Resistance 76 1.4.6 The Amplifier Power Supplies 19 2.3.4 The Voltage Follower 76 1.4.7 Amplifier Saturation 21 2.4 Difference Amplifiers 78 1.4.8 Symbol Convention 21 2.4.1 A Single-Op-Amp Difference 1.5 Circuit Models for Amplifiers 23 Amplifier 79 1.5.1 Voltage Amplifiers 24 2.4.2 A Superior Circuit: The 1.5.2 Cascaded Amplifiers 26 Instrumentation Amplifier 83 1.5.3 Other Amplifier Types 28 2.5 Integrators and Differentiators 87 1.5.4 Relationships between the Four 2.5.1 The Inverting Configuration with Amplifier Models 28 General Impedances 88 1.5.5 Determining R. and R 30 2.5.2 The Inverting Integrator 90 1.5.6 Unilateral Models 30 2.5.3 The Op-Amp Differentiator 95 1.6 Frequency Response of Amplifiers 33 2.6 DC Imperfections 97 1.6.1 Measuring the Amplifier Frequency 2.6.1 Offset Voltage 97 Response 33 2.6.2 Input Bias and Offset Currents 101 1.6.2 Amplifier Bandwidth 34 1.6.3 Evaluating the Frequency Response 2.6.3 Effect of Vos and IOs on the Operation of the Inverting Integrator 104 of Amplifiers 35 2.7 Effect of Finite Open-Loop Gain and 1.6.4 Single-Time-Constant Bandwidth on Circuit Performance 106 Networks 36 2.7.1 Frequency Dependence of the 1.6.5 Classification of Amplifiers Based on Open-Loop Gain 106 Frequency Response 42 Summary 45 2.7.2 Frequency Response of Closed-Loop Problems 46 Amplifiers 108 Contents vii 2.8 Large-Signal Operation of Op Amps 111 4.3.5 The Constant-Voltage-Drop 2.8.1 Output Voltage Saturation 111 Model 193 2.8.2 Output Current Limits 112 4.3.6 The Ideal-Diode Model 195 2.8.3 Slew Rate 113 4.3.7 Operation in the Reverse Breakdown Summary 117 Region 196 Problems 118 4.4 The Small-Signal Model 198 4.5 Voltage Regulation 203 4.6 Rectifier Circuits 208 3 Semiconductors 136 4.6.1 The Half-Wave Rectifier 209 Introduction 137 4.6.2 The Full-Wave Rectifier 210 3.1 Intrinsic Semiconductors 137 4.6.3 The Bridge Rectifier 212 3.2 Doped Semiconductors 141 4.6.4 The Rectifier with a Filter 3.3 Current Flow in Semiconductors 144 Capacitor—The Peak Rectifier 214 3.3.1 Drift Current 144 4.6.5 Precision Half-Wave Rectifier—The 3.3.2 Diffusion Current 147 Superdiode 221 3.3.3 Relationship between D and // 150 4.7 Other Diode Applications 222 3.4 The pn Junction 150 4.7.1 The Clamped Capacitor and 3.4.1 Physical Structure 150 Bootstrapping 223 3.4.2 Operation with Open-Circuit 4.7.2 The Voltage Doubler 224 Terminals 151 4.7.3 Varactors 225 3.5 The pn Junction with an Applied 4.7.4 Photodiodes 225 Voltage 157 4.7.5 Light-Emitting Diodes (LEDs) 227 3.5.1 Qualitative Description of Junction Summary 229 Operation 157 Problems 230 3.5.2 The Current-Voltage Relationship of the Junction 159 5 MOS Field-Effect Transistors 3.5.3 Reverse Breakdown 164 3.6 Capacitive Effects in the pn Junction 165 (MOSFETs) 244 3.6.1 Depletion or Junction Capacitance 166 Introduction 245 3.6.2 Diffusion Capacitance 167 5.1 Device Structure and Physical Operation 246 Summary 169 5.1.1 Device Structure 246 Problems 170 5.1.2 Operation with Zero Gate Voltage 248 5.1.3 Creating a Channel for Current Flow 248 4 Diodes 174 5.1.4 Applying a Small vDS 250 Introduction 175 5.1.5 Operation as vDS Is Increased 253 4.1 The Ideal Diode 175 5.1.6 Operation for vDS > Channel Pinch- 4.1.1 Current-Voltage Characteristic 175 Off and Current Saturation 254 4.1.2 The Rectifier 177 5.1.7 The p-Channel MOSFET 258 4.1.3 Limiting and Protection Circuits 180 5.1.8 Complementary MOS or CMOS 260 4.2 Terminal Characteristics of Junction 5.2 Current-Voltage Characteristics 261 Diodes 184 5.2.1 Circuit Symbol 261 4.2.1 The Forward-Bias Region 184 5.2.2 The iD-vos Characteristics 262 4.2.2 The Reverse-Bias Region 189 5.2.3 The iD-vGS Characteristic 263 4.2.3 The Breakdown Region 190 5.2.4 Finite Output Resistance in 4.3 Modeling the Diode 191 Saturation 267 4.3.1 The Exponential Model 191 5.2.5 Characteristics of the p-Channel 4.3.2 Graphical Analysis Using the MOSFET 270 Exponential Model 191 5.3 MOSFET Circuits at DC 273 4.3.3 Iterative Analysis Using the 5.4 Technology Scaling (Moore’s Law) and Exponential Model 192 Other Topics 285 4.3.4 The Need for Rapid Analysis 193 5.4.1 Technology Scaling 285 viii Contents 5.4.2 Subthreshold Conduction and 7.1.5 The Small-Signal Voltage Gain 372 Leakage Currents 288 7.1.6 Determining the VTC by Graphical 5.4.3 The Role of the Substrate—The Body Analysis 378 Effect 289 7.1.7 Deciding on a Location for the Bias 5.4.4 Temperature Effects 290 Point Q 380 5.4.5 Breakdown and Input Protection 290 7.2 Small-Signal Operation and Models 380 5.4.6 The Depletion-Type MOSFET 291 7.2.1 The MOSFET Case 381 Summary 292 7.2.2 The BJT Case 397 Problems 293 7.2.3 Summary Tables 418 7.3 Basic Configurations 418 7.3.1 The Three Basic Configurations 418 6 Bipolar Junction Transistors 7.3.2 Characterizing Amplifiers 419 (BJTs) 304 7.3.3 The Common-Source (CS) and Common-Emitter (CE) Amplifiers 422 Introduction 305 7.3.4 The Common-Source (Common- 6.1 Device Structure and Physical Emitter) Amplifier with a Source Operation 305 (Emitter) Resistance 427 6.1.1 Simplified Structure and Modes of 7.3.5 The Common-Gate (CG) and the Operation 305 Common-Base (CB) Amplifiers 434 6.1.2 Operation of the npn Transistor in the 7.3.6 The Source and Emitter Followers 437 Active Mode 307 7.3.7 Summary Tables and 6.1.3 Structure of Actual Transistors 315 Comparisons 447 6.1.4 Operation in the Saturation 7.3.8 When and How to Include the Output Mode 315 Resistance ro 447 6.1.5 The pnp Transistor 317 7.4 Biasing 448 6.2 Current-Voltage Characteristics 319 7.4.1 The MOSFET Case 449 6.2.1 Circuit Symbols and Conventions 319 7.4.2 The BJT Case 455 6.2.2 Graphical Representation of 7.5 Discrete-Circuit Amplifiers 461 Transistor Characteristics 325 7.5.1 A Common-Source (CS) 6.2.3 Dependence of ic on the Collector Amplifier 461 Voltage—The Early Effect 326 7.5.2 A Common-Emitter Amplifier 464 6.2.4 An Alternative Form of the Common- 7.5.3 A Common-Emitter Amplifier with Emitter Characteristics 328 an Emitter Resistance Re 466 6.3 BJT Circuits at DC 332 7.5.4 A Common-Base (CB) 6.4 Transistor Breakdown and Temperature Amplifier 469 Effects 351 7.5.5 An Emitter Follower 469 6.4.1 Transistor Breakdown 352 7.5.6 The Amplifier Frequency 6.4.2 Dependence of on Ic and Response 472 Temperature 353 Summary 473 Summary 354 Problems 474 Problems 355 part ll ANALOG INTEGRATED 7 Transistor Amplifiers 365 CIRCUITS 500 Introduction 366 7.1 Basic Principles 366 8 Building Blocks of Integrated- 7.1.1 The Basis for Amplifier Operation 366 Circuit Amplifiers 500 7.1.2 Obtaining a Voltage Amplifier 367 Introduction 501 7.1.3 The Voltage-Transfer Characteristic (VTC) 369 8.1 IC Design Philosophy 501 7.1.4 Obtaining Linear Amplification by 8.2 IC Biasing: Current Sources and Current Mirrors 503 Biasing the Transistor 370