MATERIALS SCIENCE & ENGINEERING B Materials Science and Engineering B35 (1995) 497—499 Author Index of Volume 35 Alves, E.S. 149 Diaz, I.F.L. 396 Hiibner, B. 273 Andreev, A. 429 Diaz, J. 34 Hutchinson, S.V. 376 Aoyagi, Y. 364, 467 Dietz, N. 472 Hwang, S.-M. 214 Arifin, P. 330 Downes, J.R. 357 Aubrey, J.E. 263 Du, Q. 382 Ikeda, Y. 421 Aulombard, R. 184 IVin, V.1. 120 Eaves, L. 192 Inoue, K. 295 Bachmann, K.J. 472 Egan, R.J. 176 Ishibashi, K. 364 Baeta Moreira, M.V. 149, 391 Eliashevich, I. 34 Baklanov, M.R. 322 Elliott, M. 145, 353 Jackson, M.D. 489 Bakueva, L.G. 120 Enderlein, R. 250, 267, 396, 401 Janning, H. 59 Basmaji, P. 180, 318, 322 Erdtmann, M. 34 Jin, C.S. 72 Bass, J.M. 489 Evans, R.J. 203 Johnson, M.B. 485 Beliaev, D. 250, 267 Ezumi, H. 117 Jorio, A. 160 Beton, P.H. 192 Juang, C. 56 Billen, K. 376 Faux, D.A. 357 Juergensen, H. 102 Bimberg, D. 295 Fedorovich, A.E. 47 Bird, J.P. 364 Ferry, D.K. 364 Kang, J.-M. 214 Bi, W.G. 166 Fontius, U. 245 Karam, J.M. 219 Blanter, Y. 429 Forchel, A. 208, 273 Karunasiri, G. 463 Briot, O. 184 Foster, T.J. 192 Keitoku, S. 117 Brugger, H. 208 Fromhold, T.M. 239 Kelly, M.J. 1, 376 Bryant, A.L. 353 Ke, M. 145 Buot, F.A. 303, 51 Galzerani, J.C. 180 Ke, M.-l. 349 Burke, T.M. 203 Gavartin, J.L. 459 Kestle, A. 145 Burroughes, J.H. 198, 203 Gil, B. 184 Kharas, D. 299 Button, C.C. 12 Gobel, R. 59 Kim, K. 24, 64 Goldys, E.M. 330 Kim, M.-S. 214 Carlone, C. 160 Golovin, V.G. 76 Kim, S. 34 Carvalho, A.T.G. 149 Gongalves, J.L. 401 Kim, S.-I. 214 Ceschin, A.M. 401 Gorbach, T.Y. 224 Kim, Y. 214 Chen, M.S. 29 Goto, T. 410 Kobayashi, T. 117 Chen, S. 133 Grey, R. 42 Kochnev, I.V. 47 Chen, Y.H. 12 Grimshaw, M.P. 198, 203 Koenraad, P.M. 485 Chi, G.-C. 56 Grundmann, M. 295 Komin, V.V. 47 Chin, V.W.L. 176 Guimaraes, F.E.G. 318 Komuro, S. 467 Chitta, V.A. 318 Gurary, A.I. 97 Kroll, W.J. 97 Choi, J.S. 440 Gurevich, S.A. 47 Kumar, K. 17 Choi, Y.W. 24, 64 Gusev, G.M. 322 Kuramochi, E. 7 Christen, J. 295 Kuramoto, K. 479 Chua, S.J. 17, 463 Hackbarth, Th. 208 Kwon, O.K. 24, 64 Chua, S.-J. 87 Han, Z.Y. 449 Chu, H.Y. 446 Hayden, R.K. 80 Chung, M.S. 440 Henini, M. 192, 376 Laiho, R. 372 Clark, A. 176 Hill, G. 376 Laureto, E. 401 Courtois, B. 219 Hiramatsu, M. 68 Leadbeater, M.L. 198 Cui, H.L. 256 Hogg, R.A. 42 Lee, E.H. 446 Hopkinson, M. 12 Lee, E.-H. 24, 325, 64 da Silva, S.W. 180 Horing, N.J.M. 256 Lee, H.G. 325 de Oliveira, A.G. 149, 391 Houdayer, A. 160 Lee, H.J. 230, 234 David, J.P.R. 12, 42 Houng, M.P. 435 Lee, J.I. 325 Deschler, M. 102 Huang, H.K. 295 Lee, K.-S. 325, 440 Dewdney, A.J. 345 Huang, K.C. 259 Leite, J.R. 250, 267, 396, 40! Elsevier Science S.A. 498 Author Index of Volume 35 Lei, X.L. 256 Peressi, M. 386 Svechnikov, S.V. 76 Leong, Y.C. 230 Prasad, K. 230, 234 Swaminathan, S. 109 Preobrazhenskii, V.V. 180 Levine, A. 401 a Ge. See Pusep, Y.A. 180 Tabata, A. 401 Limmer, W. 245 Py, M.A. 391 Takeuchi, M. 295 Lippens, D. 90 Tamamura, T. 7 Liu, J. 372 Quierin, M.A. 198 Tang, Z.K. 410 Liu, M.H. 435 Quivy, A.A. 250, 401 Tan, H.S. 138, 230, 234 Liu, S. 133 Taniguchi, K. 421 Li, Y. 133 Tansley, T.L. 176, 330 Rabizo, O.V. 120 Lozovik, Y. 429 Temmyo, J. 7 Radhakrishnan, K. 109, 230, 234, 449 Lubyshev, D. 318 Tetyorkin, V.V. 76 Rajagopal, A.K. 303, 51 Lubyshev, D.I. 180, 322 Thompson, A.G. 97 Ramrakhiani, M. 493 Thonke, K. 245 Ramvall, P. 382 Thornber, K.K. 256 Maehashi, K. 295 Razeghi, M. 34 Thornton, J.M.C. 489 Main, P.C. 192 Rees, G.J. 42 Ting, S.K. 230 Marahovka, I.1. 180 Reithmaier, J.P. 208 Tiong-Palisoc, S. 68 Matsushima, Y. 68 Richardson, B. 349 Tit, N. 386 Matthai, C.C. 349, 459, 489 Ritchie, D.A. 198, 203 Tse, M.S. 230, 234 Mei, X.B. 166 Roberts, C. 129, 345 Tsuji, K. 421 Miao, Y.B. 109 Roberts, J.S. 12 Tucker, C.R. 263 Milekhin, A.G. 180 Robson, P.N. 12, 42 Tu, C.W. 166 Milne, W.I. 138 Rodrigues, S.C.P. 250 Mil’shtein, S. 299 Rodriquez-Gironés, P.J. 42 Uekusa, S.-i. 156 Min, S.-K. 214 Rossi, J.C. 322 Ullrich, B. 117 Miyajima, S. 138 Rossow, U. 472 Uno, K. 406 Mizuno, Y. 156 Rowell, N.L. 160 Usher, B.F. 176 Mori, N. 192 Rykov, S.A. 120 Usui, A. 288 Moy, K. 97 Muessig, H. 208 Safonov, A.N. 000 Vanbésien, O. 90 Murray, R. 125, 129, 345 Saito, M. 267 Vaya, P. 17 Musikhiin, S.F. 120 Sakaki, H. 284 Vleuten, W.C.v.d. 485 Salagaj, T. 97 Voves, J. 417 Nabetani, Y. 454 Salemink, H.W.M. 485 Na, H.-K. 325 Sale, T.E. 12, 42 Wakahara, A. 454, 479 Nakashima, H. 295 Sasaki, A. 278, 406, 454, 479 Walker, R. 97 Nastaushev, Y.V. 322 Sato, K. 295 Wang, J. 192 Nawaz, R. 353 Sato, S. 171 Wang, K.L. 463 Nesterov, S.I. 47 Sato, Y. 171 Wang, L.J. 34 Nishiya, T. 7 Sauer, R. 245 Wang, R.L. 259 Noda, S. 406 Schmitz, D. 102 Wang, X. 372 Nomura, S. 467 Schoenfeld, O. 467 Wang, Y.H. 29, 435 Nomura, Y. 479 Schulte, F. 102 Weber, S. 245 Notzel, R. 7 Schumaker, N.E. 97 Weightman, P. 489 Nozue, Y. 410 Scolfaro, L.M.R. 250, 267, 396 Weng, J. 230, 234 Scopina, V.I. 47 Westwood, D.I. 145, 263, 349, 353 Ochiai, Y. 364 Semyagin, B.R.. 180 Wilkinson, C.D.W. 263 Ohmori, K. 68 Sheard, F.W. 239 Wilkinson, P.B. 239 Oliveira, J.B.B. 401 Sheng, H. 87 Wilks, S.P. 145, 353 Omling, P. 382 Shiba, K. 295 Williams, J.P. 263 Orth, A. 208 Silva, M.d.P.A. 322 Williams, R.H. 145 O'Reilly, E.P. 357 Sipahi, G.M. 396 Wolter, J.H. 485 Osotchan, T. 176 Sizov, F.F. 76 Woodhead, J. 12, 42 Skolnick, M.S. 42 Woods, R.C. 80 Pabla, A.S. 42 Soares, J.A.N.T. 267 Wu, D. 34 Panzlaff, K. 245 Solov’ev, S.A. 47 Parenteau, M. 160 Song, A. 367 Xiaohong, T. 72 Paret, J.M. 219 Song, C.-D. 325 Xu, H. 382 Park, J.M. 440 Stall, R.A. 97 Xu, W. 334, 341 Park, J.S. 463 Steinhagen, F. 59 Park, P.W. 446 Sugano, T. 364, 467 Yamaguchi, A.A. 288 Park, Y.-K. 214 Sugo, M. 7 Yamamoto, H. 421 Pease, R.F.W. 188 Sun, H. 133 Yamamoto, K. 364 Peng, Y. 133 Su, Y.K. 259 Yan, C.H. 166 Pepper, M. 198, 203 Svechnikov, G. 224 Yang, C.C. 259 Elsevier Science S.A. Author Index of Volume 35 Yang, X. 372 Yu, H. 125, 129, 345 Zengerle, R. 273 Yarn, K.F. 29 Yu, Q. 372 Zhang, D.H. 449 Yi, H.-J. 34 Zhang, X. 184 Yoon, S.F. 109, 138, 230, 234, 449 Zahabi, S.M. 263 Zhao, X. 467 Yoshino. K. 68 Zakheim, D.A. 47 Zheng, H. 367, 372 Yuan. C. 97 Zawadzki, P. 97 Zhou, X. 230, 234 Elsevier Science S.A. MATERIALS SCIENCE & ENGINEERING B Materials Science and Engineering B35 (1995) 501—507 Subject Index of Volume 35 Aluminium arsenide Conductance fluctuations photoluminescence properties of AlAs/GaAs disordered superlat- low-dimensional transports in GaAs/AlGaAs quasi-one-dimen- tices with fixed GaAs or AIAs layer thickness 406 sional wires by a correlation field analysis of the phase Asymmetric double quantum well coherent interferences 364 field dependent vertical-transport studies in Alp 5,Gao 7,As/GaAs Conductivity double-quantum-well structures 245 electrical conductivity of 5 doping superlattices parallel to the growth direction 250 (111)B Confining effect photoluminescence of piezoelectric strained InGaAs—GaAs theoretical study of resonant tunneling in symmetrical rectangu- multi-quantum well p—i—n structures 42 lar triple-barrier structures with deep wells 421 Band structure calculations Contact resistance single heterojunction structures for acoustic charge transfer characterization of Ni/Ge/Au/Ni/Au contact metallization on devices 80 AlGaAs/InGaAs heterostructures for pseudomorphic het- Blue shifts erojunction field effect transistor application 234 blue shifts from doubly 5-doped heterostructures 345 Correlation field analysis Bulk micromachining low-dimensional transports in GaAs/AlGaAs quasi-one-dimen- collective fabrication of microsystems compatible with CMOS sional wires by a correlation field analysis of the phase through the CMP service 219 coherent interferences 364 Buried layer Coupling effects influence of strain relaxation on the electronic properties of investigation of resonant interband tunneling structures using a buried quantum wells and wires 357 three-band k - 6 model 435 Cadmium selenide 5 doping zinc doped polycrystalline CdSe films for solar energy conversion 493 comparative studies of photoluminescence from n and p 6 dop- Cadmium sulphide ing wells in GaAs 396 luminescence properties of p-type thin CdS films prepared by Defects laser ablation 117 luminescence centres containing two, three and four hydrogen Cadmium telluride atoms in radiation-damaged silicon 000 vertical electron transport in semiconductor superlattices Monte Delta doping Carlo simulation 417 blue shifts from doubly 5-doped heterostructures 345 Carbon Deposition rate analysis of reaction gases flow in CVD processes 156 photo-enhanced chemical vapour deposition of hydrogenated amorphous silicon carbon using an internal discharge lamp 2DEG 138 anomalous peaks in the Shubnikov-de Haas spectra of a top Carrier scattering gated AlGaAs/GaAs heterostructure 382 low-dimensional transports in GaAs/AlGaAs quasi-one-dimen- Diffraction sional wires by a correlation field analysis of the phase growth and characterization of strain-compensated InAsP/ coherent interferences 364 GalnP and InGaAs/GalInP multiple quantum wells 166 CAD tools for microsystems Diffusion collective fabrication of microsystems compatible with CMOS direct optical analysis of the carrier diffusion in semiconductor through the CMP service 219 wire structures 273 Chemical vapour deposition Doping effects analysis of reaction gases flow in CVD processes 156 doping dependence of intersubband transitions in Si, _ .Ge,/Si photo-enhanced chemical vapour deposition of hydrogenated multiple quantum wells 463 amorphous silicon carbon using an internal discharge lamp luminescence properties of p-type thin CdS films prepared by 138 laser ablation 117 Clusters the study of GaAs/InGaAs 6-doping resonant interband tunnel- the electronic structure and luminescence properties of porous ing diode 259 silicon and silicon nanoclusters 459 Double barrier quantum well structure Conductance modulation characteristics of AlAs/GaAs double barrier quan- shape effects of the conductance of a quantum ballistic constric- tum well resonant tunneling structure at microwave frequen- tion in a two-dimensional electron gas 440 cies 446 Elsevier Science S.A. 502 Subject Index of Volume 35 asymmetric Fabry-Perot etalon structure in high optical Electron conduction power 64 anomalous peaks in the Shubnikov-de Haas spectra of a top Fermi-edge singularity gated AlGaAs/GaAs heterostructure 382 fermi-edge singularity of two dimensional electrons in asymmet- non-linear generation of alternating current harmonics in quan- ric coupled double quantum wells 325 tum dot superlattice miniband transport 256 Fibonacci superlattice shape effects of the conductance of a quantum ballistic constric- quantum-size layered PbS/C structures deposited by pulsed laser tion in a two-dimensional electron gas 440 evaporation in vacuum 120 Electronic properties Field profiles influence of strain relaxation on the electronic properties of measurements of interface potentials in quantum wells 299 buried quantum wells and wires 357 Focused ion beam Electron microscopy a closed UHV focused ion beam patterning and MBE regrowth ballistic electron emission microscopy of InAs/Ga,_ , Al,As re- technique 208 laxed heterostructure interfaces 349 measurements of interface potentials in quantum wells 299 GaAs Electron—phonon interaction blue shifts from doubly 5-doped heterostructures 345 raman scattering in PbI, clusters incorporated into zeolite cages quantum interference effect in GaAs/AlGaAs double quantum 410 wells 372 Electron states GaAs/AIAs dual-branch electron waveguide couplers 90 the influence of exciton migration on photoluminescence lifetime self-consistent calculation of electronic states in asymmetric dou- in growth-interrupted GaAs/AIAs single quantum wells 125 ble barrier structure 367 GaAs/AlGaAs Electron transport switching characteristics of nonbiased optical bistability in asym- vertical electron transport in semiconductor superlattices Monte metric Fabry-Perot S-SEEDs made of extremely shallow Carlo simulation 417 quantum well structures 24 Electron tunnelling Gallium arsenide examination of internally delta-doped gallium arsenide resonant a comparison of observed and simulated scanning tunneling tunnelling structures 353 images of the reconstructed GaAs(001) surface 489 Elementary excitations a hole facet wire formed by MBE regrowth over an ex-situ the electronic structure and luminescence properties of porous patterned GaAs substrate 203 silicon and silicon nanoclusters 459 a novel approach in fabrication and study of laterally quantum- Engineered molecular layer epitaxy confined resonant tunnelling diodes 192 real-time monitoring of heteroepitaxial growth processes on the Be delta-doped layers in GaAs studied by scanning tunnelling silicon(001) surface by p-polarized reflectance spectroscopy microscopy 485 472 characterization of Ni/Ge/Au/Ni/Au contact metallization on Epitaxial growth AlGaAs/InGaAs heterostructures for pseudomorphic het- novel high temperature metal organic chemical vapor deposition erojunction field effect transistor application 234 vertical rotating-disk reactor with multizone heating for comparative studies of photoluminescence from n and p 6 dop- GaN and related materials 97 ing wells in GaAs 396 Epitaxial regrowth critical layer thickness in MOCVD grown InGaAs-GaAs a closed UHV focused ion beam patterning and MBE regrowth strained quantum wells 184 technique 208 electrical conductivity of 56 doping superlattices parallel to the Epitaxial silicon growth direction 250 doping dependence of intersubband transitions in Si, _ ,Ge,/Si electron mobility in low temperature grown gallium arsenide 330 multiple quantum wells 463 examination of internally delta-doped gallium arsenide resonant Epitaxy of thin films tunnelling structures 353 state-of-the-art control of growth of superlattices and quantum fermi-edge singularity of two dimensional electrons in asymmet- wells 102 ric coupled double quantum wells 325 Etching formation of AlGaAs quantum wires on vicinal GaAs(110) reactive ion etched quantum wire structures for laser applications surfaces misoriented 3° toward (111)A by molecular beam 47 epitaxy 295 selective wet etching of a GaAs/Al,.Ga,_ .As heterostructure influence of surface structure on surface segregation and alloy with citric acid—hydrogen peroxide solutions for pseudo- properties in (100)- and (311)-oriented InGaAs/GaAs het- morphic GaAs/Al,Ga,_,As_ heterofunction field effect erostructures 318 transistor fabrication 230 investigation of the photoluminescence linewidth broadening in Excitation spectra symmetric and asymmetric InGaAs/GaAs n-type 6-doped excitation spectra of two-dimensional bounded electronic sys- quantum wells 401 tems in a strong magnetic field 429 magnetotunnelling transport phenomena and quantum chaos in Exciton migration semiconductor heterostructures 239 the influence of exciton migration on photoluminescence lifetime native defects in gallium arsenide grown by molecular beam in growth-interrupted GaAs/AIAs single quantum wells 125 epitaxy and metallorganic chemical vapour deposition: Extons effects of irradiation 160 thermalization effects of low dimensional excitons in quantum new hole negative differential resistance strained-layer device 87 wires and quantum wells 284 non-linear generation of alternating current harmonics in quan- tum dot superlattice miniband transport 256 Fabry-Perot cavity photoluminescence in degenerate p-type GaAs layers grown by noise characteristics of electro-absorptive logic device utilizing molecular beam epitaxy 449 Subject Index of Volume 35 503 photoluminescence properties of AlAs/GaAs disordered super- selective wet etching of a GaAs/Al,Ga,_ ,.As heterostructure with citric acid—hydrogen peroxide solutions for pseudo- lattices with fixed GaAs or AIAs layer thickness 406 morphic GaAs/Al,.Ga,_,As_ heterofunction field effect photoreflectance investigations of semiconductor device struc- transistor fabrication 230 tures 267 HEMT proton implantation of Al,Ga,_ ,As/GaAs resonant-tunnelling photoreflectance investigations of semiconductor device struc- diode structures 376 tures 267 role of the InAs monomolecular plane inserted in bulk GaAs High-field effects 386 non-linear generation of alternating current harmonics in quan- selective wet etching of a GaAs/Al,Ga,_ .As heterostructure tum dot superlattice miniband transport 256 with citric acid—hydrogen peroxide solutions for pseudo- morphic GaAs/Al,Ga,_,.As_ heterofunction field effect Indium transistor fabrication 230 influence of surface structure on surface segregation and alloy self-organized InGaAs quantum disk lasers 7 properties in (100)- and (311)-oriented InGaAs/GaAs het- the control and modification of metal-semiconductor interfaces erostructures 318 using multi quantum barriers 145 Indium aluminum arsenide the study of GaAs/InGaAs 6-doping resonant interband tun- optical and structural characterizations for optimized growth of neling diode 259 Ing sxAly 4gAs on InP substrates by molecular beam epitaxy thermalization effects of low dimensional excitons in quantum 109 wires and quantum wells 284 Indium arsenide top sawtooth grating for GaAs/AlGaAs quantum well IR de- new hole negative differential resistance strained-layer device 87 tectors 56 role of the InAs monomolecular plane inserted in bulk GaAs Gallium indium phosphide 386 visible vertical cavity surface emitting lasers at 4 < 650 nm 12 Indium nitride Gallium—indium phosphide on silicon(001) InN thin-film growth using an ECR plasma source 171 real-time monitoring of heteroepitaxial growth processes on the Indium phosphide silicon(001) surface by p-polarized reflectance spectroscopy hydride — VPE embedding of InAlGaAs laser structures with 472 SI InP:Fe 59 Gallium nitride Infrared detector novel high temperature metal organic chemical vapor deposi- MBE and MOCVD growth of AlGaAs—AlAs—GaAs double tion vertical rotating-disk reactor with multizone heating barrier multiple quantum well infrared detector 176 for GaN and related materials 97 Infrared photodetectors top sawtooth grating for GaAs/AlGaAs quantum well IR de- tectors 56 Heterojunctions Infrared spectroscopy single heterojunction structures for acoustic charge transfer doping dependence of intersubband transitions in Si, _ ,Ge,/Si devices 80 multiple quantum wells 463 Heteromaterials InGaAs growth of GaAs—InP heteromaterials and corresponding strain the effects of In segregation on the emission properties of determination 133 In. Ga, _ .As/GaAs quantum wells 129 Heterostructures Intraband relaxation anomalous peaks in the Shubnikov-de Haas spectra of a top optimized design parameters of InGaAs—InP quantum well gated AlGaAs/GaAs heterostructure 382 lasers 17 a novel approach in fabrication and study of laterally quan- Intrinsic defects tum-confined resonant tunnelling diodes 192 native defects in gallium arsenide grown by molecular beam ballistic electron emission microscopy of InAs/Ga, _ , Al,As re- epitaxy and metallorganic chemical vapour deposition: laxed heterostructure interfaces 349 effects of irradiation 160 characterization of Ni/Ge/Au/Ni/Au contact metallization on Ion implantation AlGaAs/InGaAs heterostructures for pseudomorphic het- proton implantation of Al,Ga,_ ,As/GaAs resonant-tunnelling erojunction field effect transistor application 234 diode structures 376 charge capture in AlGaAs/GaAs heterostructures with disor- dered antidot lattice 322 Kinetics of heteroepitaxy determination of barrier heights in heterostructures utilising real-time monitoring of heteroepitaxial growth processes on the real-space transfer of hot electrons 263 silicon(001) surface by p-polarized reflectance spectroscopy electrical conductivity of 5 doping superlattices parallel to the 472 growth direction 250 influence of surface structure on surface segregation and alloy Laser properties in (100)- and (311)-oriented InGaAs/GaAs het- state-of-the-art control of growth of superlattices and quantum erostructures 318 wells 102 magnetotunnelling transport phenomena and quantum chaos in Laser processing semiconductor heterostructures 239 hydride — VPE embedding of InAlGaAs laser structures with migration of silicon atoms in planar-doped GaAs/AlGaAs SI InP:Fe 59 modulation doped fluid effect transistor heterostructures luminescence properties of p-type thin CdS films prepared by grown by molecular beam epitaxy 149 laser ablation 117 photo-Hall studies of modulation-doped field-effect transistor Lead iodide clusters heterostructures using (InAs),,(GaAs),, superlattice chan- Raman scattering in Pbl, clusters incorporated into Zeolite nels 391 cages 410 504 Subject Index of Volume 35 formation of AlGaAs quantum wires on vicinal GaAs(110) Light emitting diodes surfaces misoriented 3° toward (111)A by molecular beam barrier-modulated GaAs/InGaAs quantum well optoelectronic epitaxy 295 switch (QWOES) prepared by molecular beam epitaxy Ge composition dependence of photoluminescence properties of 29 Si, _. Ge,/Si disordered superlattices 479 disordered superlattices 278 growth and characterization of strain-compensated InAsP Lithography GalnP and InGaAs/GalInP multiple quantum wells 166 can nanolithography ever be a manufacturing technology? 188 MBE and MOCVD growth of AlGaAs—AlAs—GaAs double LIGA barrier multiple quantum well infrared detector 176 collective fabrication of microsystems compatible with CMOS migration of silicon atoms in planar-doped GaAs/AlGaAs through the CMP service 219 modulation doped fluid effect transistor heterostructures Localization grown by molecular beam epitaxy 149 quantum-size layered PbS/C structures deposited by pulsed optical and structural characterizations for optimized growth of laser evaporation in vacuum 120 Iny s>Alp 4gAs on InP substrates by molecular beam epitaxy Luminescence of p-type CdS 109 luminescence properties of p-type thin CdS films prepared by photoluminescence in degenerate p-type GaAs layers grown by laser ablation 117 molecular beam epitaxy 449 Monte Carlo models electron mobility in low temperature grown gallium arsenide Magnetic field effect 330 edge states in strong electric and magnetic fields in a two-di- vertical electron transport in semiconductor superlattices mensional semiconductor system 341 Monte Carlo simulation 417 excitation spectra of two-dimensional bounded electronic sys- MOCVD tems in a strong magnetic field 429 critical layer thickness in MOCVD grown InGaAs—GaAs influence of strong magnetic fields on the ionization of the strained quantum wells 184 modulation-doped donors in AlI,Ga,_ ,.As—GaAs- photoluminescence properties of AlGaP superlattices 454 Al,,Ga, _ ,,As single quantum wells 334 state-of-the-art control of growth of superlattices and quantum MBE wells 102 the effects of In segregation on the emission properties of Multiple quantum wells In. Ga, _ .As/GaAs quantum wells 129 IV—VI compositional MQWs and SLs for optoelectronic appli- Measurement of Fermi energy cations 76 measurements of interface potentials in quantum wells 299 Multi-project wafer Metalo—organic chemical vapor deposition (MOCVD) collective fabrication of microsystems compatible with CMOS high power aluminium-free InGaAsP/GaAs pumping diode through the CMP service 219 lasers 34 MBE and MOCVD growth of AlGaAs—AlAs—GaAs double barrier multiple quantum well infrared detector 176 n—i—p-—i structure novel high temperature metal organic chemical vapor deposi- saturation of the non-linear absorption in n—i—p-—i multiple tion vertical rotating-disk reactor with multizone heating quantum well structures 72 for GaN and related materials 97 Nanolithography self-organized InGaAs quantum disk lasers 7 can nanolithography ever be a manufacturing technology? 188 Metal—organic source modulation epitaxy Nitrides growth of GaAs—InP heteromaterials and corresponding strain InN thin-film growth using an ECR plasma source 171 determination 133 Non-linear effects Metal—organic vapour phase, epitaxy quantum transport and non-linear dynamics of interacting enhancement of side wall growth rate during MOVPE growth quantized fields and applications to nanoelectronics and on patterned substrates with CCl, 214 optoelectronics 51 Metal—semiconductor structures the control and modification of metal-semiconductor interfaces using multi quantum barriers 145 Optical matrix element MESFET anisotropic optical matrix elements in [hhk]-oriented quantum photoreflectance investigations of semiconductor device struc- wires 288 tures 267 Optical properties Microwave oscillator disordered superlattices 278 modulation characteristics of AlAs/GaAs double barrier quan- formation of AlGaAs quantum wires on vicinal GaAs(110) tum well resonant tunneling structure at microwave fre- surfaces misoriented 3° toward (111)A by molecular beam quencies 446 epitaxy 295 Molecular beam epitaxy influence of surface structure on surface segregation and alloy a closed UHV focused ion beam patterning and MBE re- properties in (100)- and (311)-oriented InGaAs/GaAs het- growth technique 208 erostructures 318 a hole facet wire formed by MBE regrowth over an ex-situ nanocrystalline Si: a material constructed by Si quantum dots patterned GaAs substrate 203 467 a hole facet wire formed by MBE regrowth over an ex-situ reactive ion etched quantum wire structures for laser applica- patterned GaAs substrate vii tions 47 barrier-modulated GaAs/InGaAs quantum well optoelectronic temperature dependence of luminescence in ZnSe 68 switch (QWOES) prepared by molecular beam epitaxy the electronic structure and luminescence properties of porous 29 silicon and silicon nanoclusters 459 Subject Index of Volume 35 thermalization effects of low dimensional excitons in quantum Piezoelectric wires and quantum wells 284 photoluminescence of piezoelectric strained InGaAs—GaAs Optical spectra in an electrical field multi-quantum well p—i-—n structures 42 quantum-size layered PbS/C structures deposited by pulsed Plasma processing laser evaporation in vacuum 120 InN thin-film growth using an ECR plasma source 171 Optoelectronics Proton irradiation IV—VI compositional MQWs and SLs for optoelectronic appli- native defects in gallium arsenide grown by molecular beam cations 76 epitaxy and metallorganic chemical vapour deposition: effects of irradiation 160 Quantum effects p—i—n diodes disordered superiattices 278 photoluminescence of piezoelectric strained InGaAs—GaAs dual-branch electron waveguide couplers 90 multi-quantum well p—i—n structures 42 formation of AlGaAs quantum wires on vicinal GaAs(110) p—n junction surfaces misoriented 3° toward (111)A by molecular beam a hole facet wire formed by MBE regrowth over an ex-situ epitaxy 295 patterned GaAs substrate 203 nanocrystalline Si: a material constructed by Si quantum dots p-type CdS 467 luminescence properties of p-type thin CdS films prepared by photoluminescence properties of AlGaP superlattices 454 laser ablation 117 quantum interference effect in GaAs/AlGaAs double quantum Photo-CVD wells 372 photo-enhanced chemical vapour deposition of hydrogenated quantum transport and non-linear dynamics of interacting amorphous silicon carbon using an internal discharge lamp quantized fields and applications to nanoelectronics and 138 optoelectronics 51 Photoelectrochemical cells theory of novel nonlinear quantum transport effects in reso- zinc doped polycrystalline CdSe films for solar energy conver- nant tunneling structures 303 sion 493 Quantum structures Photogenerated carriers MBE and MOCVD growth of AlGaAs—AlAs—GaAs double modulation characteristics of AlAs/GaAs double barrier quan- barrier multiple quantum well infrared detector 176 tum well resonant tunneling structure at microwave fre- nanocrystalline Si: a material constructed by Si quantum dots quencies 446 467 Photoluminescence reactive ion etched quantum wire structures for laser applica- blue shifts from doubly 5-doped heterostructures 345 tions 47 comparative studies of photoluminescence from n and p 6 dop- self-organized InGaAs quantum disk lasers 7 ing wells in GaAs 396 single heterojunction structures for acoustic charge transfer direct optical analysis of the carrier diffusion in semiconductor devices 80 wire structures 273 theoretical study of resonant tunneling in symmetrical rectan- fermi-edge singularity of two dimensional electrons in asym- metric coupled double quantum wells 325 gular triple-barrier structures with deep wells 421 thermalization effects of low dimensional excitons in quantum field dependent vertical-transport studies in Aly 5,Gap 7,As wires and quantum wells 284 GaAs double-quantum-well structures 245 Ge composition dependence of photoluminescence properties of Quantum well Si, _ .Ge,/Si disordered superlattices 479 critical layer thickness in MOCVD grown InGaAs—GaAs growth and characterization of strain-compensated InAsP, strained quantum wells 184 GalnP and InGaAs/GalnP multiple quantum wells doping dependence of intersubband transitions in Si, _ ,Ge,/Si 166 multiple quantum wells 463 investigation of the photoluminescence linewidth broadening in dual-branch electron waveguide couplers 90 symmetric and asymmetric InGaAs/GaAs n-type 6-doped growth and characterization of strain-compensated InAsP/ quantum wells 401 GalnP and InGaAs/GaInP multiple quantum wells 166 native defects in gallium arsenide grown by molecular beam influence of strain relaxation on the electronic properties of epitaxy and metallorganic chemical vapour deposition: buried quantum wells and wires 357 effects of irradiation 160 investigation of the photoluminescence linewidth broadening in optical and structural characterizations for optimized growth of symmetric and asymmetric InGaAs/GaAs n-type 5-doped Ing 52>Aly 4gAs on InP substrates by molecular beam epitaxy quantum wells 401 109 magnetotunnelling transport phenomena and quantum chaos in photoluminescence in degenerate p-type GaAs layers grown by semiconductor heterostructures 239 molecular beam epitaxy 449 measurements of interface potentials in quantum wells 299 photoluminescence properties of AlAs/GaAs disordered super- new hole negative differential resistance strained-layer device 87 lattices with fixed GaAs or AIAs layer thickness 406 optimized design parameters of InGaAs—InP quantum well photoluminescence properties of AlGaP superlattices 454 lasers 17 temperature dependence of luminescence in ZnSe 68 saturation of the non-linear absorption in n-—i—p-—i multiple visible vertical cavity surface emitting lasers at 4<650 nm quantum well structures 72 12 state-of-the-art control of growth of superlattices and quantum Photoreflectance wells 102 photoreflectance investigations of semiconductor device struc- the effects of In segregation on the emission properties of tures 267 In. Ga, _ ,As/GaAs quantum wells 129 Subject Index of Volume 35 theory of novel nonlinear quantum transport effects in reso- asymmetric Fabry-Perot S-SEEDs made of extremely nant tunneling structures 303 shallow quantum well structures 24 the study of GaAs/InGaAs 6-doping resonant interband tun- Scanning tunnelling microscopy neling diode 259 Be delta-doped layers in GaAs studied by scanning tunnelling Quantum well effects microscopy 485 top sawtooth grating for GaAs/AlGaAs quantum well IR de- Schottky barrier tectors 56 ballistic electron emission microscopy of InAs/Ga,_ , Al,As re- Quantum wells laxed heterostructure interfaces 349 barrier-modulated GaAs/InGaAs quantum well optoelectronic Segregation switch (QWOES) prepared by molecular beam epitaxy 29 influence of surface structure on surface segregation and alloy direct optical analysis of the carrier diffusion in semiconductor properties in (100)- and (311)-oriented InGaAs/GaAs het- wire structures 273 erostructures 318 noise characteristics of electro-absorptive logic device utilizing the effects of In segregation on the emission properties of asymmetric Fabry-Perot etalon structure in high optical In. Ga, _ .As/GaAs quantum wells 129 power 64 Self electro-optic effect device quantum interference effect in GaAs/AlGaAs double quantum noise characteristics of electro-absorptive logic device utilizing wells 372 asymmetric Fabry—Perot etalon structure in high optical switching characteristics of nonbiased optical bistability in power 64 asymmetric Fabry-Perot S-SEEDs made of extremely Semiconductor devices shallow quantum well structures 24 are quantum semiconductor devices delivering? | Quantum wires characterization of Ni/Ge/Au/Ni/Au contact metallization on anisotropic optical matrix elements in [hhk]-oriented quantum AlGaAs/InGaAs heterostructures for pseudomorphic het- wires 288 a novel approach in fabrication and study of laterally quan- erojunction field effect transistor application 234 tum-confined resonant tunnelling diodes 192 dual-branch electron waveguide couplers 90 examination of internally delta-doped gallium arsenide resonant tunnelling structures 353 Raman scattering quantum transport and non-linear dynamics of interacting optical and structural characterizations for optimized growth of quantized fields and applications to nanoelectronics and Iny 5>Aly 4gAs on InP substrates by molecular beam epitaxy optoelectronics 5] 109 reactive ion etched quantum wire structures for laser applica- Raman scattering in PblI, clusters incorporated into zeolite tions 47 cages 410 selective wet etching of a GaAs/Al,Ga,_ ,As heterostructure Real-time optical process monitoring real-time monitoring of heteroepitaxial growth processes on the with citric acid~hydrogen peroxide solutions for pseudo- silicon(001) surface by p-polarized reflectance spectroscopy morphic GaAs/Al,Ga,_,.As_ heterofunction field effect 472 transistor fabrication 230 Re number self-organized InGaAs quantum disk lasers 7 analysis of reaction gases flow in CVD processes 156 Semiconductor for devices Resonant enhancement proton implantation of Al,Ga,_ ,As/GaAs resonant-tunnelling the influence of exciton migration on photoluminescence life- diode structures 376 time in growth-interrupted GaAs/AlAs single quantum Semiconductors wells 125 direct optical analysis of the carrier diffusion in semiconductor Resonant interband tunnelling wire structures 273 investigation of resonant interband tunneling structures using a edge states in strong electric and magnetic fields in a two-di- three-band k - 6 model 435 mensional semiconductor system 341 Resonant tunnelling magnetotunnelling transport phenomena and quantum chaos in a novel approach in fabrication and study of laterally quan- semiconductor heterostructures 239 tum-confined resonant tunnelling diodes 192 photoluminescence of piezoelectric strained InGaAs—GaAs modulation characteristics of AlAs/GaAs double barrier quan- multi-quantum well p—i—n structures 42 tum well resonant tunneling structure at microwave fre- spontaneous anisotropic chemical etching as a nanostructure quencies 446 surface modification method for the A'''BY semiconduc- theoretical study of resonant tunneling in symmetrical rectan- tors 224 gular triple-barrier structures with deep wells 421 temperature dependence of luminescence in ZnSe 68 Resonant tunnelling diodes side-gated GaAs/AlGaAs double barrier resonant tunnelling zinc doped polycrystalline CdSe films for solar energy conver- diodes formed by patterned substrate regrowth 198 sion 493 Resonant tunnelling structures Shape effects theory of novel nonlinear quantum transport effects in reso- shape effects of the conductance of a quantum ballistic con- nant tunneling structures 303 striction in a two-dimensional electron gas 440 Shubnikov-de Haas anomalous peaks in the Shubnikov-de Haas spectra of a top Schottky barrier gated AlGaAs/GaAs heterostructure 382 the control and modification of metal-semiconductor interfaces SiGe using multi quantum barriers 145 Self electro-optic effect device Ge composition dependence of photoluminescence properties of switching characteristics of nonbiased optical bistability in Si, _ .Ge,/Si disordered superlattices 479