Journal of Electrostatics, 31 (1993) 359-360 Elsevier Author Index Volume 31 Amerasekera, A. and A. Chatterjee, An investigation of BiCMOS ESD protection circuit elements and applications in submicron technologies 145-160 Andresen, B.H., see Carbajal III, B.G. 310-312 Arkhipov, V.I., D.V. Khramchenkov, A.I. Rudenko and G.M. Sessler, Space-charge dispersive transport in corona-charged dielectrics 21-— 26 Bao, P.Y., see Matsui, M. 1- 10 Bock, K. and H.-L. Hartnagel, Fieldemitter-based ESD-protection circuits for high-frequency devices and IC’s 263-279 Boudjella, A., M.Yumoto and T. Sakai, Current distributions of negative D.C. corona on the plane for point-plane gap in nitrogen rich condition Hi- 19 Campbell, D.S., see Tunnicliffe, M.J. 91-110 Carbajal ITI, B.G., R.A. Cline and B.H. Andresen, A successful HBM ESD protection circuit for micron and sub-micron level CMOS 301-312 Chatterjee, A., see Amerasekera, A. 145-160 Chum, K., see Greason, W.D. 281-300 Cline, R.A., see Carbajal III, B.G. 301-312 Croft, G.D., On clip ESD protection using SCR pairs 177-197 Delecki, J.J., see Voldman, S.H. 237—262 Difaz, C., S.-M. Kang, C. Duvvury and L. Wagner, Electrical overstress (EOS) power profiles: A guideline to qualify EOS hardness of semiconductor devices 161-176 Duvvury, C., see Difaz, C. 161-176 Dwyer, V.M., see Franklin, A.J. 35-— 50 Dwyer, V.M., see Tunnicliffe, M.J. 91-110 Fallone, B.G., see MacDonald, B.A. 27— 33 Franklin, A.J. and V.M. Dwyer, Electrical characterisation of ESD degradation in GaAs devices 35— 50 Fujibayashi, K., see Matsui, M. 1- 10 Galloway, K.F., see Zupac, D. 131-144 Greason, W.D. and K. Chum, Experimental study of unprotected MOS structures under EOS/ESD conditions 281-300 Gross, V.P., see Voldman, S.H. 237-262 Hargrove, M.J., see Voldman, S.H. 237-262 Hartnagel, H.-L., see Bock, K. 263-279 Hyatt, H.M., The resistive phase of an air discharge and the formation of fast risetime ESD pulses 339-356 360 Author Index Volume 31 Kang, S.-M., see Difaz, C. 161-176 Karanja, P. and R. Nath, Electrical conduction in biaxially-oriented polypropylene 51- 63 Khramchenkov, D.V., see Arkhipov, V.I. 21-— 26 Kim, S.U., ESD induced gate oxide damage during wafer fabrication process 323-337 Kishimoto, Y., see Matsui, M. 1- 10 Krakauer, D., ESD protection in a 3.3 V sub-micron silicided CMOS technology 111-129 Lee, V.W., see Weston, H.T. 79— 89 Lin, D.L. and T.L. Welsher, From lightning to charged-device model electrostatic discharges 199-213 MacDonald, BA. and B.G. Fallone, Charge decay of electrets formed by ionizing radiation in air 27-— 33 Maloney, T.J., Integrated circuit metal in the charged device model: bootstrap heating, melt damage, and scaling laws 313-321 Matsui, M., N. Murasaki, K. Fujibayashi, P.Y. Bao and Y. Kishimoto, Electrification of pure water flowing down a trough set up with a resin sheet 1- 10 Murasaki, N., see Matsui, M. 1- 10 Nath, R., see Karanja, P. 51- 63 Never, J.M., see Voldman, S.H. 237-262 O’Boyle, M.P., see Voldman, S.H. 237-262 Pote, D., see Zupac, D. 131-144 Rudenko, A.I., see Arkhipov, V.I. 21— 26 Sakai, T., see Boudjella, A. 11- 19 Schrimpf, R.D., see Zupac, D. 131-144 Scott, T.S., see Voldman, S.H. 237-262 Sessler, G.M., see Arkhipov, V.I. 21- 26 Slinkman, J.A., see Voldman, S.H. 237-262 Smith, D.C., Techniques and methodologies for making system level ESD response measurements for troubleshooting or design verification 215-235 Stanik, T.D., see Weston, H.T. 79— 89 Tunnicliffe, M.J., V.M. Dwyer and D.S. Campbell, Latent damage and parametric drift in electrostatically damaged MOS transistors 91-110 Voldman, S.H., V.P. Gross, M.H. Hargrove, J.M. Never, J.A. Slinkman, M.P. O’Boyle, T.S. Scott and J.J. Delecki, Shallow trench isolation double-diode electrostatic discharge circuit and interaction with DRAM output circuitry 237-262 Wagner, L., see Difaz, C. 161-176 Welsher, T.L., see Lin, D. L. 199-213 Weston, H.T., V.W. Lee and T.D. Stanik, A newly observed high frequency effect on the ESD protection utilized in a gigahertx NMOS technology 79-— 89 Yumoto, M., see Boudjella, A. 11- 19 Zupac, D., D. Pote, R.D. Schrimpf and K.F. Galloway, Annealing of ESD-induced damage in power MOSFETs 131-144 Journal of Electrostatics, 31 (1993) 363 Elsevier Subject Index Volume 31 Analysis, 161 Ionizing radiation, 27 BiCMOS, 145 Latent failures, 91 Charged-device model, 199, 313 Measurement, 215, 339 Charge decay, 27 CMOS, 111, 301 NMOS, 79 Corona, 11 Current, 51 Oxide damage, 323 Current distribution, 11 Polypropylene, 51 Damage, 131 Power mosfet, 131 Devices, 35 Protection, 145, 263, 301 Direct damage, 313 Protection circuit, 79, 111 Dispersive transport, 21 Radiation-induced charge transport, 21 DRAM, 237 Reliability, 91, 145, 237 Electrets, 27 SCR, 177 Electrical conduction, 51 Semiconductor devices, 161 EOS/ESD, 161, 281 Space-charge, 21 ESD, 79, 91, 111, 131, 145, 199, 215, 237, 263, 301, 313, 323, 339 Test, 161 ESD degradation, 35 Thermal annealing, 131 ESD protection, 177 Transients, 215 Fabrication, 323 Unprotected MOS, 281 Field emission, 263 Water electrification, 1 GaAs, 35, 263 Waveforms, 339 High frequency, 79