Berding, M.A.(6) 573, (6) 595, Chen, A.C. ...(6) 546, (6) 595, (6) 605 Abe, T. (5) 427 (6)605 Chen, C.-M.(1) L5, (11) 1193 Abedrabbo, S.... (12) 1323, (12) 1341 Berdinskikh, T.(3) 114 Chen, C.A.(6) .546 Abernathy, C.R.(3) 132, (4) 166, Best, A.(6) 733 Chen, C.H.(7)L47 (7)915,(12) 1329 Bevan, M.J.(6) 640, (6) 769 Chen, H.(6) 788 Bewley, W.W.(2) 77 Chen, K.Y.(3) 110 Abuel-Rub, K.M. (6) 776 Bhat, I.B.(6)489,(6) 521 Chen, Q.(4) 2.55, (4) 261 Adachi, A. (9) 1043 Bhat, R.(5) 484 Chen, Q.(8)961 Adesida, I. .. (4) 159, (4) 255, (4) 261, Bibby, T.(10) 1073 Chen, S.-W.(1)L.5,(11) 1193 (4) 282, (7) 858 Biefeld, R.M.(4) 179, (4) 190, (6) L43 Chen, W. (12) 1341 Aguilar, M.(4) 276 Bimberg, D. ... (2) 73, (3) 106, (5) 414 Chen, Y.(6)61.5,(7)918 Ahlgren, W.L. (6) 550 Bin, Y. (6)680 Chen, Y.-K.(8) 9.54 Ahmed, M.U.(6) 763 Ahn, J.(1) 44 Bishop, S.G.(4) 246 Chen, Y.P.(6)776 Blanco, J.M.(4) 276 Chen, Z.G.(2) .59 Ahoujja, M.(4) 210 Aifer, E.H.(2) 77 Bliss, D.F.(7)883 Cheng, W.H.(7) L47 Akella, A. (3) 127 Bloom, I.(7) 858 Cheung, N.W.(9) 10.59 Akimoto, K. (4) 200 Bocaranda, P.(12) 1351 Childress, J.R.(8) 972 Alferov, Zh.I. .(2) 73, (3) 106, (5) 414 Bolognesi, C.R.(8) L54 Cho, H.(4) 166, (7) 91.5, (8) 972 Allen, S.(l)Ll Bolze, D.(9) 1022 Cho, M.W.(2)85 Allerman, A.A.(6) L43 Booske, J.H. (9) 1027 Cho, S.H.(4)200 Almeida, L.A.(6) 500, (6) 657 Botchkarev, A.(4) 171 Choi, H.K.(9) 10.38 Alvis, R.(5) 405 Bowen, J.W.(6) L40 Choi, J.B.(6) 668 Amirtharaj, P.M.(6) 489 Bozack, M.J.(4) 324, (4) 330 Chow, D.H.(8) L.54 Amster, R.(7) 923 Brady, M.R.(4) 308 Chow, J.W.(12) 1291,(12) 1296 Antoszewski, J.(6) 740 Bramono, D.(10) 1082 Chow, T.P.(10) 1128 Aqariden, F.(6) 504, (6) 507, Bremser, M.D.(4) 229, (4) 233, Chowdhury, E.A.(7)918 (6)640 (5) L26 Choyke, W.J.(4) 345 Arias, J.M... (6) 546, (6) 595, (6) 605, Brewer, P.D.(6) 494, (6) 747 Chu, J.H.(2) 51, (6) 718 (6) 698, (6) 722 Briggs, R.(6) 709 Chu, P.K.(9) 10.59 Arulkumaran, S.(12) 1358 Brown, A.S.(8) L58 Chua, S.J.(9) L61 Arzt, E.(7)853 Brunett, B.(6) 788 Chuang, S.L.(7) 8.58 Asa, G.(6) 800, (6) 807 Bryant, G.(7) 883 Chung, H.(6) .556, (8) 985 Asahi, H.(7) 829 Bubulac, L.O.(6) 722 Clark, A.J.(5) 418 Asai, Y.(6) 527, (8) 948 Buchanan, M.(3) 114 Cockrum, C.A.(6) 5.50 Asif Khan, M.(4) 255, (4) 261 Bulman, G.(4) 282 Cole, T.(6) .536 Ata, A.(10) 1104 Burger, A.(6) 788 Cole-Hamilton, D.J.(6) 624 Avila, R.E.(2) L9 Burm, J....(2)69, (8)954, (11)1244 Coleman, J.J.(4) 246 Awadelkarim, 0.0.(11) L77 Buschbaum, S.(12) 1278 Colin, T.(6)651, (6)733 Ayers, J.E.(11) 1248 Busnaina, A.A.(10) 1095 Collins, C.E.(6) L40 Buss, M.R.(4) 370 Colter, P.(9) 1038 Button, C.C. (1) 17 Conrad, H.(8) 941 Bae, D-L.(4) L21 Constantine, C.(4) 166 Bae, S.-Y.(1) 1 Cooper, J.A., Jr.(4)296, (4)3.53, Calle, F.(4) 276 Bae, S.H.(6) 684 (4)370 Calleja, E.(4) 276 Bagnall, D.M.(2) 85 Cooper, L.(7) 858 Campbell, B.C.(9) 1038 Bailey, S.L.(6) 550 Coppeta, J.(10) 1082 Cao, X.(12) 1329 Bajaj, J.(6) 727 Crofton,J.(1)12, (4)324, (4)3.30 Balasubramaniam, H.(5) 405 Capano, M.A.(4) 370 Cronin, N.J.(6) L40 Baldasaro, P.F.(9) 1038 Carlson, E.P.(4) 238 Cross, E.(6) 788 Balocchi, C.(2) L9 Carstanjen, H.-D.(7) 853 Currie, M.C.(6) 564 Bandara, S.V.(7) 858 Casati, D.(3) 138 Curtis, A.P.(7) 8,58 Banks, A.D.(4) 238 Case, F.C.(6) 510, (6) 709 Curtis, C.J.(5) 4.33 Barnett, A.(7) 918 Catchpole, R.(6) 733 Basak, D.(4) 276 Caulfield, J.T.(6) 747 Baucom, K.C.(6) L43 Chamberlain, J.M.(6) L40 d’Heurle, F.M.(11) 11.38 Beccard, R.(4) 222 Chambers, G.(6) 504 D’Souza, A.I.(6) ,546, (6) 722, Bechstedt, F.(7) 848 Chamonal, J.P.(6) 542 (6)727 Becker, C.R.(6) 532 Chan, Y.C. (1) 41 Dakshinamurthy, S.(6) 521 Chandra, D.(6) 640 Becker, L. (6) 504 Dangca, A.(10) 1099 Beltran, N.H.(2) L9 Chang, Y.C.(7)858 Danielson, L.R.(9) 1038 Benson, J.D.(6) 500, (6) 600, Charache, G.W.(9) 1038 Darab, J.G.(10) 1068 (6)657, (6) 689 Chauvet, M.(7) 883 Das, M.K.(4) 3.5.3 Chen, A.-B.(6) 694 Dashiell, M.(7) 918 1.375 Dat, R. (6) 640 Fang, W. .(7)858 Grider, D.E. (5) 479 David, J.P.R.(1) 17 Fang, Z.-Q. ....(2)62, (10)L68 Griffis, D.P.(4) 229 Davies, S.R.(6) L40 Faraone, L.. ....(6)661, (6)740 Groh, B. (12) 1315 Davis, R.F.(4) 229, (4) 233, Faurie, J.P. . (9)1047 Groning, P.(8) 990, (11) 1254 (4) 238, (5) L26 . Feenstra, R.M.. (4)308 Grudowski, P.A.(4) 206 Daweritz, L.(1) 36 Felix, C.L. . (2) 77 Grundmann, M.(5) 414 DeAnda, F. (8) 1003 Feng, M. . (7)858 Grunwald, Ch.(12) 1286 Dehart, C. (6) 689 Feng, S.L. . (2) 59 Gui, Y.S.(2)51,(6)718 Dell, J.M.(6) 661,(6)740 Ferret, P. . (6)542 Gunapala, S.D.(7) 858 Delucca, J.M‘..(4) 196, (4) 330 Ferry, D.K. .(4)171 Gurskii, A.L.(4) 222 deLyon, T.J.(6) 494, (6) 550 Fine, M.E. . (11)1223 Gutmann, R.J.(10) 1128 Denisov, LA. (6) 648 Fiory, A.T. .(12)1323 Guttzeit, A.(4) 222 Depoy, D.M. (9) 1038 Fischer, G. . (9)1022 Gutzler, S.(6) 640 Destefanis, G. (6) 542 Fissel, A. . (7)848 H deWames, R.E.(6) 595, (6) 698, Fitzgerald, E.A.... ...(5)451, (7)900, (6)722, (6) 727 (9)1010 Hacke, P.L.(8) 941 Dharmarasu, N.(12) 1358 Flitton, R.A. .(5)433 Hahn, M.S.(6) 668 Dieker, C.(4) 215 Flynn, J.S. . (4)210 Hahn, S.R.(6) 680 Digby, J.W.(6) L40 Fournelle, R.A. .(11)1167 Hails, J.E.(6) 624 Dinan,J.H.(6)500, (6)657, Freeman, M.J. . (9)1038 Hall, R.S.(6) 733 (6)689 Fries, S.G. . (8)961 Haller, E.E. (11) 1236 Dmitriev, V.A.(4) 288, (4) 292 Frigge, S. . (12)1278 Halliburton, L.E.(6) 813 Docter, D.P. (5) 479 Froeschle, B. . (12)1315 Hamm, R.A.(2) 69, (8) 954, Dodge, J.A. (6) 769 Fu, C.-H. . (9)1017 (11)1244 Donovan, S.M.(4) 166, (7) 915 Fu, M. . (12) 1329 Han, B.-K.(2) 81 Doolittle, W.A.(8) L58 Fujii, H.. (4)215 Han, H.(8) 985 Dornfeld, D.(10) 1099 Furkawa, Y. . (5) 427 Han, J.(4) 175, (4) 179, (4) 190, Dorsey, D.L. (5) 472 Furthmiiller, J. .... (7)848 (7)915 Doty, F.P.(6) 788, (6) 813 Fury, M.A.. (10)1088 Han, M.S.(6) 680 Downey, D.F.(12) 1291, (12) 1296 Hangleiter, A.(3) 122 G Doyle, B.(9) 1059 Hanser, A.D.(4) 238 Dua, C. (5)442 Gao, Y. . (5)479 Harris, J.S., Jr.(4) 185 Dubray, J.J.(6) 494 Garcia, J.Ch.. (5) 442 Hata, K.(4) 200 Duckers, L.J. (6) 610 Garcia, J.M. . (9)1030 Hayashi, Y. (1) 30 Dudley, M.(6) 556, (6) 615 Gaskill, D.K. .(4) 159 He, L. (11) 1272 Dupuis, R.D. (4) 206 Ge, Y.-R.. (7)891 He, X.M.(1)41 Duxstad, K.J.(11) 1236 Gearhart, S.S. .(9)1027 Heffelfinger, J.(6) 788 Dvorak, M.W.(8) L54 Gelpey, J.. (12)1323 Heime, K.(4) 222 Dziendziel, R.J. (9) 1038 Geng, C. . (3)122 Heinemann, B.(9) 1022 Georgiou, G. .. . (8)954 Hellmig, R.(6) 532 E Germain, M... .(5) L29 Helms, C.R. .(6) 583, (6) 672, (6) 703 Ebe, H.(6) 579 Gerschiitz, J. . . (6)532 Hemmingsson, C.(7) 871 Edwall, D.D.(6) 546, (6) 595, Geva, M. . (2)69 Hendricks, R.W.(7) 821, (7) 826 (6)698,(6)722,(6)727 Ghosh, G. .(11) 1137,(11) 1154, Henning, J.P.(4) 296 Egley, J.L. (9) 1038 (11)1223, (12)1362 Henry, A.(4) 300 Egorov, A.Y. (3) 106 Giess, J. .(6)624 Hermon, H.(6) 788 Ehwald, K.E.(9) 1022 Giles, N.C. .(6)756,(6)813 Hernandez del Castillo, I.C. (8) 1003 Eiting, C.J. (4) 206 Ginley, D.S. ... . (5)433 Hesselink, L.(3) 127 Elhamri, S. (4) 210 Gladkikh, A... . (9)1034 Hettich, H.L.(6) 564 Elsawy, T.M. (10) 1095 Goetz, P.M. . (6)747 Heuken, M.(4) 222, (5) L29 Emanetoglu, N.(11) L72 Gokce, O.H. ... . (12)1277 Hicks, R.F.(2) 81 Emerson, R.M.(6) 615 Gonda, S.-I. ... . (7)829 Higa, K.T.-..(2) 81 Enoki, T.(7) L51 Gong, C. .(3)L13 Hildebrandt, G.(6) 546 Erickson, K.L.(11) 1177 Goorsky, M.S. .(2)81,(6)788 Hillert, M.(8) 961 Errazu, X.(2) L9 Gorantla, S.... . (5)472 Hilton, N.(6) 788 Evrard, R.(5) L29 Gorbatchev, A.Y.(8) 1003 Hirose, M. (8) 936 Gordeev, N.Y. . (3)106 Hirsch, L.S.(6) 651, (6) 756 F Gordon, E.E... .(6)615 Hirsch, M.T.(11) 1236 Fahey, R.E.(9) 1038 Gordon, N.T... . (6)733 Hiyamizu, S.(9) 1043 Fahmy, Y. (8) 941 Gorelik, J. .(6)800, (6)807 Hmiel, A.F.(11) 1211 Fan, J.C.(3) 110 Gorla, C.R. .(8) 1005, (11)L72 Hobson, W.S.(3) 132 Fan, X. (9) 1007 Goronkin, H. . .(DLl Holander-Gleixner, S.(6) 672 Fan, Z. (9) 1059 Goschenhofer, F. (6) 532 Holland, K.(10) 1073 Greve, D.W.... . (4)308 1377 Hollingsworth, R.E. .(6)689 Juergensen,H. ..(4)222, (4)342 Kovsh, A.R. .(3) 106 Hong, J.(3) 132, (7) 915, (8) 972 Jung, H. .(6)668 Kreiser, U. .(12)1278 Hong, W. . (7)858 Jung, K.B. .(8)972 Krestnikov, I.L. .(2)73 Hoonnivathana, E... . (6)610 Krishnamurthy, S... .(6)694 K Hopkins, P.L. .(11)1177 Kropewnicki, T.J. .(8)L58 Horton, T. . (7)858 Kackell, P.. (7)848 Kruger, D. .(9)1022 Hou, Y.B. (6)668, (6)680 Kaczer, B. .(4)345 Kryganovskii, A.K. . . (5)414 Houston, P.A. .(1)17 Kagawa, T. . (8)998 Krzanowski, J.E. . (11)1211 Hsieh, K.C. .(7)858,(7)L47 Kainosho, K. .(1)8, (10)L68 Kubota, Y.. (6)527 Hsu, J.W.P.. (9)1010 Kang, H.K. .(4)L21 Kubota, Y. .(8)948 Hu, C.. (9) 1059 Kang, S. .(8) L58, Kuech, T.F. .(5) L35 Huang, T.F.. . (3)127 Kang, S.K.(11) 1137,(11) 1199 Kumar, B.R. .(5)405 Hultman, L. . (7)833 Kang, T.W. ...(6)668, (6)680 Kumar, D. . (10)1104 Hurst, A.T., Jr. . (8)972 Kao, C.R. . (7)842 Kumar, J. . (12)1358 Hwang, N. . (8) 985 Kappers, M.J. . (2)81 Kurivama, K. .(5)462 Hwu, R.J. . (5)405 Kariya, Y. (7)866,(11) 1229 Kuschke, W.-M. .(7)853 Hyun, J.K. . (6)680 Karlicek, R.F., Jr. ....(4) 179,(4) 196 Kwon, H.C. .(6)680 Karpovski, M.(9) 1034 L Kasai, I.(6) 550 Ibbetson, J.P.(5) 479 Kashani, H.(7) 876 Lakeenkov, V.M. .(6)648 Igoshev, V.I. (12) 1367 Kato, H.(4) 200 Lambers, E.S. .(3)132 Im, H.-J.(4) 345 Kaufman, F.B.(10) 1082 Lambrecht, W.R.L. . (4)345 Ingrey, S.(2) 89 Kawakami, T.(6) 772, (8) 929 Lampe, S. .(5)L29 Inoue, M.(4) 358 Keane, J.(5) 433 Landwehr, G. .(6)532 Inukai, F.(6) 527, (8) 948 Keller, U.(2) 55 Lang, D.V. .(8)954 Irvine, S.J.C.(6) 763 Khemka, V.(10) 1128 Lange, M.D. .(6)536 Lapasin, R. .(3)138 Isaacs-Smith, T.(4) 330 Khlebnikov, I.(10) 1124 Lareau, R.T. .(5)405 Ishii, Y.(7) L51 Kim, B.J.(5) L32 Larson, D.J., Jr. . (6)556 Itoh, O.(5) 438 Kim, C.-K.(6)668,(6)684 Ivanov, S.V.(2) 73, (5) 414 Kim, D.W.(4) L21 Ledentsov, N.N. .... (2) 73,(3) 106, (5)414 Ivey, D.G.(2) 89 Kim, H.-S.,.(4) L21 Lee, B.-J. . (11)1161 Iyer, S.S.K. (9) 1059 Kim, H.K.(6) 668, (6) 680 Lee, C. .(10)1112 Iyer, V. (4) 324 Kim, H.S. (7)908 Lee, C.-T. .(9)1017 Kim, J.-H.(5) 466 Lee, C.H. . (6)668 Kim, J.M.(6)668,(6)680 Jaecklin, V.P.(8) 990 Kim, S.(4) 246 Lee, C.P. .(3) no Lee, D. .(6)709 Jagadish, C.(9) L61 Kim, S.T.(10) 1112 Lee, E.Y. . (6) 788 Jain, F.C. (11) 1248 Kim, T.I.(5) L32 Lee, H. .(4) 185 Jain, T.A.(7) 842 Kim, T.W.(6) 680 Lee, H.C. ... (6)668,(6)684 Jakobson, C.G.(6) 800 Kim, Y.H.(7)829 Lee, H.J. . (7)829 Jamba, D.M.(6) 747 Kimoto, T.(4) 358 Lee, H.M.. (11)1161 James, R.B.(6) 788 Kisielowski, C. (4) 215 Lee, J. .(6) 668 Jang, J.(11) 1262 Kitada, T. (9) 1043 Lee, J.. .(9) 1059 Janzen, E.(4)300, (7)871 Kivilahti, J.K. (3) 149 Lee, J.W. .(5)L32 Jayavel, P.(12) 1358 Kleiman, J.I.(12) 1367 Lee, M.Y. .(4)L21 Jensen, J.E. (6) 494, (6)550,(6) 747 Klein, P.B. (4) 246 Lee, N.I. .(4)L21 Jenson, M.(8) 972 Knoll, D.(9) 1022 Lee, P.P. . (5)405 Jeon, H.C. (6) 680 Ko, D.-H.(4) L21 Lee, S.H. . (6)684 Jeoung, Y.T.(6) 668, (6) 680 Koh, K.W.(2) 85 Lee, S.H. . (10)1117 Jin, S.(11) 1148,(11) 1216 Kohl, P.A.(8) L58 Lee, S.T. . (1)41 Joe, Y.-I.(8) 985 Koide, Y.(6) 772, (8) 929, (8) 998 Lee, Y.J. . (10)1112 Johnson, B. (7) 923 Kojima, K.(6) 527, (8) 948 Leem, J.H. .(6)680 Johnson, J.L.(6) 747 Kolodzey, J.(7) 918 Lerch, W. .(12)1291 Johnson, J.N.(6) 500, (6) 657, Konstantinov, A.O.(4) 335 Li, B. .(2)51,(6)718 (6)689 Koo, J.G.(11) 1262 Li, G. .(9)L61 Johnson, S.M.(6) 550 Kop’ev, P.S. ...(2)73, (3) 106,(5)414 Li, L. . (2)81 Jobs, B.(6) 500 Kopchatov, V.I.(3) 106 Li, P. . (11)1248 Jonczyk, R. (7) 918 Kopf, R.F. ..(2)69,(8)954,(11) 1244 Li, Q. . (12)1347 Jones, C.L.(6) 733 Korhonen, T.-M. (3) 149 Li, X. . (1)30 Jones, E.D.(6) 610 Kosai, K.(6) 747 Li, X. .(4)246 Jones, K.M.(5) 433 Koshiba, S.(11) 1240 Liang, J.. (11)1167 Joo, G.(8) 985 Koumoto, K. (4) 304 Liang, S. (8) 1005, (11)L72 Jouravlev, O.K. (6) 648 Kovsarian, A. (11) 1268 Lie, D.Y.C. .(5)377 1378 Liliental-Weber, Z... (4) 215, (5) 427, Maximov, M.V.(2) 73, (3) 106, Narayanan, S. . (5)402 (11) 1236 (5)414 Nathan, V. .. (6) 507, (9) 1047 Lilov, S.K.(1) 30 Mayo, W.E.(11) L72 Naumann, E. . (9)1022 Limpijumnong, S. (4) 345 McCurdy, J. (6) 709 Nayar, N. . (6)727 Lin, C.-H.(2) 77 McKelvey, M.(7) 858 Nehauer, E. . (12)1372 Lin, G.(3) 110 McLean, E.O.(6) 564 Nekludov, P.V. .(5)414 Lin, H. (7)838 McLevige, W.V.(6) 546, (6) 698 Nemirovsky, Y. ... ....(6)800, (6)807 Lin, K.-L.(3)97,(11) 1205 Mehendale, M. (6) 752 Nenyei, Z. .(12)1286 Lin, W. (9) 1017 Mehregany, M.(3) L17 Neu, G. .(9)1047 Lindefelt, U.(4) 335 Mei, X.Y.(3) 114 Neudeck, P.G. .(4)317 Lingren, C.L.(6) 788 Mel’tser, B.Ya.(5) 414 Newman, N. .(4)215 Linnarsson, M.K.(7) 833 Melloch, M.R.(4) 159, (4) 296, Newrock, R.S. .(4)210 Liu, H.C.(7) 858 (4)353, (4) 370 Ng, C.M.S....;. .(1) 17 Liu, H.L.(9) 1027 Merkwitz, M.(12) 1278 Ng, T.-B. . (4)190 Liu, J.K.(7) 858 Metcalfe, N.E.(6) 733 Niess, J. . (12)1286 Liu, T.(5) 479 Meyer, J.R. (2) 77 Nieto-Navarro, J. . (8) 1003 Liu, T.-P.(3) 97 Miao, X.S.(1) 41 Nikitina, I.P. ....(4)288, (4)292 Liu, W.-C.(1)L5,(11) 1193 Mier, M.G,.(2) 62 Nikolaev, A.E. . (4)288 Liu, X.Q.(9) L61 Miles, R.E.(6) L40 Nimura, T. .(6) 527, (8) 948 Liu, Y.(11)L72 Million, A.(6) 542 Nishino, H. . (6)579 Liu, Z.-K.(12) 1362 Mishra, U.K.(5) 479 Nishino, S. .(1)30 Ljungcrantz, H.(5) 418 Mishurnyi, V.A.(8) 1003 Nishizawa, J.-I.... ....(5)438, (8)979, Lock, C.(12) 1367 Mitchel, W.C.(4) 210 (9)1053 Loosing, R. (4) 229 Mitra, P.(6) 510, (6) 709 Niu, Z. .(1)36 LoefTelmacher, D.(12) 1278 Miyajima, Y.(4) 200 Noda, S. . (5)427 Look, D.C...(2)62, (5) L26, (10) L68 Miyamoto, Y.(6) 579 Noel, S. .(12)1315 Lu, X.(9)1059 Miyatake, T.(8) 936 Noh, S.J. . (7)829 Lu, Y.(8) 1005, (11)L72 Mohammadi, S.(5) 442 Nordell, N. ....(4)335, (7)833 Lu, Z.D.(2) 59 Mohney, S.E. ..(1) 12, (1) 24, (4) 196, Norton, T. . (6)709 Luckowski, E.D.(4) 330 (4) 324, (4) 330 Notis, M. . (11)1137 Lund, J.(6) 788 Moldovan, M. (6) 756 Nbtzel, R. .(1)36 Luo, J.(2) 89 Monroy, E. (4) 276 Nouet, G. . (4)266 Luong, E. (7) 858 Moon, D.C.(10) 1112 Noufi, R. (5)433, (12) 1334 Luther, B.P.(4) 196 Moon, Y.M.(6) 668 Nowak, Z. .(6) 740 Lutsenko, E.V.(4) 222 Moore, H.J.(12) 1334 Nugraha. . (5)438 Moore, K.E.(4) 365 M Moore, R.(2) 89 O Mack, M.(5) L26 Mora, A.E.(12) 1351 Oates, W.A. .. (8)961 Mackenzie, J.D.(4) 166 Morgenstern, T.(9) 1022 Oda, 0. .(1)8, (10) L68 MacMillan, M.F.(4) 300, (7) 871 Mori, H.(8) 998 Oder, T.N. .(1) 12, (4)324 Madangarli, V.(10) 1124 Mori, K.(6)527, (8)948 Ogura, M. .(10)L64 Madsen, L.D.(5) 418 Morkog, H.(4) 171 Ohashi, M. . (9)1043 Maeda, T.(7) 915 Motozawa, M.(8) 979 Ohta, M. . (1)8 Mahajan, U.(10) 1104 Moynihan, J.F.(9) 1038 Okamoto, Y. . (9)1043 Mai, M.(12) 1372 Muller, G.(11) 1254 Oku, T. . (8)998 Malik, R.J.(2) 69 Muller, J.C.(12) 1315 Okumura, H. . (4)200 Malikova, L.(5) 484 Mumolo, J. (7) 858 Olowolafe, J.O. .(7)918 Malin, J.I. (7) 858 Munoz, E.(4) 276 Olsen, R. . (6)788 Mao, D.H.(6) 703 Munzinger, P.(12) 1278 Olson, D.L. . (12)1334 Marcus, S.D.(12) 1291, (12) 1296, Murakami, M.(6) 772, (8) 929, Olson, G.L. .(6)494 (12) 1323 (8)998, (10) L64 Olsson, E. . (7)833 Marin, G. (12) 1351 Murry, S.J.(2) 77 Orent, T. .(6) 640 Marko, I.P. (4) 222 Murty, K.L.(11) 1137 Otsuka, M. .(7)866,(11) 1229 Martinka, M.(6) 657 Musca, C.A.(6) 661, (6) 740 Ozaki, K. .(6)579 Maruyama, T.(4) 200 Muthuvenkatraman, S.(5) 472 Mason, N.J.(5) 466 Myers, T.H.(6) 651, (6) 756 P Mast, D.B.(4) 210 N Paik, S.W.(6) 668 Matson, D.W.(10) 1068 Palevski, A.(9) 1034 Matson, R.J. (5) 433 Nakamura, S.(4) 160 Pangrle, S.K. (10) 1099 Matsunami, H.(4) 358 Nakamura, Y.(11) 1240 Parent, D.W. (11) 1248 Matuo,T.(9) 1053 Nakata, T.(4) 358 Parilla, P.A.(5) 433 Mavoori, H.(11) 1148, (11) 1216 Nam, K.S.(11) 1262 Park, H.S.(5) L32 Maxey, C.D.(6) 733 Nam, O.H. .. (4) 229, (4) 233, (5) L26 Park, H.Y.(10) 1112 1379 Park, J.W. (5) 442 Ren, F. ..(4) 175,(8)954 Schulz, D.L.(5) 433 Park, J.W.(6) 668 Rendakova, S.V. ..(4)288,(4)292 Sekhar, J.A.(12) 1329 Park, M. (11) 1262 Rhee, J.K. .(7)829 Sen, S.(6)564,(6)615 Park, S.(8) 985 Rhee, S.J. . (4)246 Sengupta, D.K.(7) 858 Park, Y.(5) L32 Rhiger, D.R. ..(6)564,(6)615 Seo, W.(4) 304 Parker, D. (6) 709 Richards-Bahh, M.R.(6) 651 Seong, T.-Y.(5) 409, (5) 466, Parkhurst, G.M.(6) L40 Richter, E. .(12)1372 (10)1117 Pasko, J.G. ..(6) 546, (6) 698, (6) 722 Richter, W. . (7)848 Serrano, J.J.(4) 276 Patten, E.A.(6) 747 Ricks, D.A. .(4)229 Setzler, S.D.(6) 813 Pavlidis, D.(5) 442 Ringel, S.A., .(5)451,(7)900, Shangguan, D. (12) 1367 Pazarkas, N. (7) 853 (9)1010 Shannon, J.M. (11) 1268 Pearson, S.D.(6) 600 Rohinson, H.. (6)589 Sharps, P.(9) 1038 Pearton, S.J.(3) 132, (4) 166, Rohinson, H.G. .. (6)583,(6)672, Shen, D.(9) 1007 (4) 175,(4) 179, (7)915, (8)972, (6)703 Shen, H.(8) 1005 (12)1329 Rogers, C. . (10)1082 Sher, A.(6) 573, (6) 595, (6) 605, Pei, S.-S.(2) 77 Roth, J.A. . (6)494 (6)694 Pelz, J.P. (4) 345 Rottner, K. . (7)833 Shernyakov, Y.M.(3) 106 Pendharkar, S.(1) LI Rouvimov, S. .(5)427 Shi, Z.(2) 55 Perry, W.G. ..(4) 229, (4) 238 Ruhin, M.D. . (4)215 Shih, H.D.(6)640,(6)769 Persson, P.O.A. (7) 833 Ruda, H.E. . (3)114 Shimomura, S.<9) 1043 Peterson, J.M. (6) 615 Rujirawat, S. .(6)546,(9) 1047 Shin,W.(4) 304 Petroff, P.M.(9) 1030 Rush. . (1)44 Shiralagi, K.(1) LI, (5) 446 Pfennighaus, K.(7) 848 Ruterana, P. . (4)266 Shul, R.J. ...(3) 132, (4) 166, (4) 175, Pfeuffer-Jeschke, A. (6) 532 Ruvimov, S. .(11)1236 (7)915 Philipossian A.(10) 1082 Ruzin, A. ...(6)800,(6)807 Sieg, R.M. ..(5) 451, (7) 900, (9) 1010 Piderit, G.(2) L9 Ryan, R.W. (2)69,(8)954,(11)1244 Siliquini, J.F.(6) 661 Ping, A.T.(4) 255, (4) 261 Ryu, M.Y. . (5)409 Singh, R.(3)L13,(5)402 Piotrowski, J. (6) 740 Ryu, S. . (4)370 Singh, R.K.(10) 1067, (10)1104, Plachke, D.-W.(7) 853 (12)1329 S Ploog, K. H.(1)36 Sirtori, V.(3) 138 Poliak, F.H.(5)484 Sacks, R.N.. (7)900 Sivananthan, S.(6) 504, (6) 507, Pollard, R.D.(6) L40 Sadwick, L.P. .(5)405 (6) 546, (6) 595, (6) 752, (6) 776, Pool, F. (7) 858 Saeki, T. . (9) 1043 (9)1047 Potin, V. (4) 266 Sakaki, H. . (11) 1240 Skauli, T. .(6)733 Potz, W. (6) 752 Sakharov, A.V. . (2)73 Slaoui, A. . (12)1315 Pozdeev-Freeman, Yu.(9) 1034 Salamo, G.J. .(7)883 Smith, A.R... (4)308 Prete, P.(6) 763 Salvador, A. .(4) 171 Smith, D. .(7)918 Price, S.L. (6) 564 Sanchez Perez, G. .(12)1351 Smith, D.J.. (9)1047 Pricl, S. (3) 138 Sanchez, F.J. .(4)276 Smith, E.P.G. .(6)661 Protzmann, H. (4) 342 Sanchez-Garcia, M.A.(4) 276 Smith, F. . (6)709 Ptak, A.J.(6) 756 Sano, N. .(9)1043 Smith, M.S. . (6)550 Purushothaman, S.(11) 1199 Sanz-Hervas, A. ... . (4)276 Snyder, D.J. . (1) 1 Sarvepalli, V. .(12)1329 Soloviev, S. . (10)1124 Q Sasaki, A. . (5)427 Song, B.K. . (6)668 Qiu, G.(7)918 Schaefer, M. . (11) 1167 Song, J.-I. .(5)409 Schieher, M. . (6)788 Song, M. .(8)985 R Schindler, R. . (12)1315 Sopori, B.L.(12) 1277, (12) 1341 Rablau, C.I.(6) 813 Schineller, B. . (4)222 Sorokin, S.V. . (2)73 Racz, L.(10) 1082 Schlaphach, L. (8)990,(11) 1254 Sotomavor Torres, C.M.(2) 73 Raghothamachar, B.(6) 556 Schlesinger, T.E... . (6)788 Spencer, M. .(4)159 Rajan, K.(10) 1067, (10) 1107 Schley, P. . (9)1022 Spicer, W.E. . (6)490 Rajavel, R.D.(6) 494, (6) 550, Schmid, P. . (12)1278 Spirydon, R. . (10)1117 (6)747 Schmid-Fetzer, R. . (8)961 Sporken, R. .(6) 776 Ramachandran, V.(4) 308 Schmitz, A.C. . (4)255 Stall, R.A. . (4)179 Ramsteiner, M.(1) 36 Schmitz, D. ....(4)222,(4)342 Steenson, D.P. .(6) L40 Ratakonda, D. (5) 402 Schneuwly, A. (8)990,(11) 1254 Stillman, G.E. . (7)858 Ravindra, N.M.(12) 1277, Schoen, K.J. . (4)296 Stinespring, C.D. . ...(6)651,(6)756 (12) 1323,(12) 1341 Schoenfeld, W.V... . (9)1030 Stock, S. .(8)L58 Razon, E.(11) 1211 Scholz, F.. (3) 122 Storm, D.F. . (6)536 Redwing, J.M. (4) 210 Schon, 0. .(4)222,(4)342 Strauch, G. . (4)342 Reiger, D.J.(4) 179 Schoner, A. .(7)833 Stringfellow, G.B. . (10)1117 Reine, M.B. (6) 510 Schroeder, W.A. ..,. (6)752 Strohmaier, R. . (12) 1286 Reisman, A. (7) 908 Schroter, B... (7)848 Stutz, C.E. . (5)L26,(12)L81 1380 Sudarshan, T.S.(10) 1124 Wiesner, H.(5) 433 Sudharsanan, R.(6) 807 Wijewarnasuriya, P.S.(6) 504, Uchida, M.... (1) 8, (5) 462, (10) L68 Sudhir, G.S. (4) 215 (6) 507, (6) 546, (6) 595, (6) 727 Ueno, K.(4) 313 Suehle, J.(7) 918 Williams, B.L.(6) 583 Umeda, Y.(7) L51 Suemitsu, T.(7) L51 Williams, C.K.(7) 908 Unruh, K.M.(7) 918 Sumathi, R.R.(12) 1358 Williams, J.R. (1) 12, (4) 324, (4) 330 Ushiyama, K.(5) 462 Summers, C.J.(6) 600, (6) 634 Williams, J.S.(4) 179 Ustinov,V.M.(3) 106 Sundman, B.(8) 961 Wilson, J.A.(6) 747 Suto, K.(5) 438, (8) 979, (9) 1053 Wirth, R.(3) 122 Suvorova, A.A.(5) 414 Wiseman, M.(12) 1367 van Deusen, S.B.(4) 179 Suzuki, A.(6) 772, (8) 929, (8) 998 Wojtczuk, S.J.(9) 1038 van Schilfgaarde, M. (6) 573, (6) 605 Suzuki, K. (8) 936 Wolansky, D.(9) 1022 van Scyoc, J.(6) 788 Sverdlov, B. (4) 171 Wolden, C.A.(4) 238 Vanasupa, K.S.(7) 923 Swann, C.P.(7) 918 Wolny, M.(6) 542 Vartuli, C.B.(4) 166 Swider, W.(5) 427 Wong, S. (12) 1367 Vassilevski, K.V. (4) 288 Syllaios, A.J.(6) 703, (6) 769 Wong, W. S. (4) 215 Vaynman, S.(11) 1223 Wood, M.C.(5) 405 Vedula, L.(3) L13, (5) 402 Venkat, R.(5) 472 Woodall, J.M.(4) 296 Takai, O.(4)304 Woods, I.(2) 89 Ventura, L.(12) 1315 Takemura, O.(4) 358 Wraback, M.(8) 1005 Venzor, G.M.(6) 550 Takeuchi, N. (11) 1240 Wu, O.K.(6) 494, (6) 550, (6) 747 Verie, C.(6) 782 Tamura, W. (5) 438 Wiirfl, J.(12) 1372 Vermaut, P.(4) 266 Tan, H.H.(4)179,(9) L61 Vianco, P.T.(11) 1177 X Tanabe, A. (8) 936 Vigil, J.A.(6)550 Tanaka, I.(11) 1240 Xu, Q.(9) 1010 Villar, C.(4) 276 Tanaka, M. (6) 579 Xu, Z.Y.(2) 59 Viney, I.V.F.(6) 610 Tanaka, Y.(8) 936 Vinod, K.N.(3) L17 Y Tang, D. (6) 718 Volovik, B.V.(5) 414 Tang, J.(10) 1099 Vurgaftman, I. (2) 77 Yablonskii, G.P.(4) 222 Tate, A.(2)69,(8)954,(11) 1244 Vydyanath, H.R.(6) 504, (6) 507 Yakimov, T.(7) 871 Tennant, W.E. (6) 722 Yakimova, R.(7) 871 Teraguchi, N.(6) 772, (8) 929, Yang, B.(9) 1007 (8)998 Wachtendorf, B. . (4)342 Yang, H.(1) 44 Theiler, T. (12) 1278,(12) 1315 Wagner, B.K. . (6)600 Yang, J.-J.(5) 409, (10) 1117 Theret, G. . (6)542 Wahab, Q. ...(4)335,(7)833 Yang, J.W.(4) 255, (4) 261 Therrien, R.J.... . (4)238 Wakahara, A. . (5)427 Yang, R.Q.(2) 77 Tillack, B. .(9)1022 Walker, P.j. . (5)466 Yang, X.P.(2) 59 Tillmann, A. . (12)1278 Wampler, W.R. . (4)179 Yao, T.(2)85 Timmons, M. .(9) 1038 Wang, C.A. . (9)1038 Yao, W.(6) 788 Yasseen, A.A.(3) L17 Ting, S.M... (5) 451, (7) 900, (9) 1010 Wang, L. . (6)689 Yasuda, K.(6) 527, (8) 948 Tischler, M.A.... . (4)210 Wang, S.C. .(7) L47 Yeo, J.S.(3) 127 Titkov, A.N. . (5)414 Wang, S.X. . (1) 1 Yokoyama, H.(7) L51 Tobin, S. . (6)709 Wang, S.Y. . (3)110 Yokoyama, K.(5) 462 Todorov, S. . (12)1291 Wang, W. . (9)1027 Yoo, K.-H.(6) 668 Tomomura, Y. .. .(6)772,(8)929, Wang, W.I. .(7)858 Yoon, H.(2) 81, (6) 788 (8)998 Wang, X.J. . (11)1272 Yoon, S.F.(1) 44 Toney, J. . (6)788 Wang, Y.-C. .(11)1205 Yoon, S.W.(11) 1161 Tong, F.M. . (12)1323 Wang, Y.Z. .(11)L77 Yoshida, S.(4) 200 Tong, W.. (6)600 Wang, Z.M. .(2)59 Youtsey, C.(4) 282 Tongun, Y. .(9) 1053 Ward, Allan, III .... ...(7)821,(7)826 Yow, H.K.(1) 17 Towery, D.. (10) 1088 Washburn, J. . (5)427 Yu, G.(9) 1007 Trampert, A.. (1)36 Wasim, S.M. . (12)1351 Yu, H.K.(11) 1262 Tregubova, A.S. . (4)292 Watanabe, H. . (8)979 Yu, P.W.(5)409 Tresek, J. .(1) LI, (5)446 Weaver, L. .(5)418 Yu, S.J.(7) 829 Tsai, C.-D.. (9)1017 Weber, E.R. ...(4)215,(5)427 Yuan, S.(9) L61 Tsai, C.M. . (3)110 Weckwerth, M.V. .. . (4)190 Tsatsul’nikov, A.F.... (3) 106, (5) 414 Weirauch, D.F. . (6)769 Z Tsen, K.T. . (4)171 Weisman, M.B. .(7)858 Zaitsev, S.V.(3) 106 Tsui, R. .(1) LI, (5) 446 Weitzel, C.E. . (4)365 Zanatta, J.P.(6) 542 Tsunoda, T. . (5)462 Wellmann, P.J. . (9)1030 Zandian, M.. (6) 546, (6) 595, (6) 722 Tu, Y.K. .(7) L47 Welsch, J. . (6)709 Zhang, D.(2) 77 Turner, G.W. .(9) 1038 Wen, L.-H. . (3)97 Zhang, H. (12) 1347 Wiedemeier, H. .(7)891 Zhang, J.(9) 1007 1381 Zhang, K. . (9)1038 Zhao, G. .(11)1248 Zhukov, A.E. .(3) 106 Zhang, L.H. .(6) 600, (6) 634 Zhao, Q. .(2)59 Ziemer, K.S. .(6)651 Zhang, Q. .(1)44 Zhao, X'. .(9)1007 Zogg, H.. (2) 55 Zhang, R. . (5)446 Zheleva, T.S. .(4) 233, (4) 238 Zolper, J.C.. (4) 179 Zhang, R. .(5)L35 Zheng, H.Z. . (2)59 Zorman, C.A.. (3)L17 Zhang, X. . (12)1347 Zhu, J.Q. .(2)51 Zvanut, M.E. .(7)838 Zhang, X.G. . (11)1248 Zhu, Z.. (2)85 (lll)B. (11) 1240 Au wire bonding.. (8) 990, (11) 1254 chemical mechanical (411)A InP substrates. (9) 1043 Au-Ni thermocouple .(11) 1254 planarization.(10) 1082, 1/fnoise.(6)733, (9)1022 Au/n-GaN.(11) 1272 (10) 1099,(10) 1107 2D subband quantization. (6) 668 Au/Ni coated multichip material chemical mechanical 3C-SiC/Si.(3) L17 (MCM).(8)990 polishing.(10) 1073, (10) 1082, 4H-SiC.(4)317, (10) 1128, Auger rate.(6) 694 (10)1088 ,(11)1262 (12)L81 Auger suppression.(6) 733 chemical vapor deposition 6H-SiC.(1)30, (4)313 (CVD).(1)30, (1)44, B 6H-SiC(0001).(4)229 (3)L13, (11) 1148 ballistic electron emission chemical vapor transport A microscopy (BEEM). (4) 345 (CVT).(7)891 absorption coefficient. (12) 1341 band gap. . (5)484 CHF3.(4) 185 absorptive gain.(7) 883 band structure .... ....(4)200, (6)694 chromium boride.(4) 324 acceptor doping.(4) 229, (4) 358 bandwidth. . (8)985 CIS.(5)433 acoustic.(10) 1099 barrier. . (5)418 CI3 discharges.(4) 166 acoustic streaming.(10) 1095 barrier height. (4)255, (11) 1272 CMP.(10) 1073 activation annealing.(12) 1329 base current CMP numerical Ag plated Cu lead frames. (8) 990 characteristics. . (9)1022 simulation. (10) 1082 A1 bond pads.(8) 990 base electrode. .(11)1244 Co-doping.(1) 1 A1 metallization. (7) 853 BCA. . (12)1358 coalescence.(4) 233 Al/Ni interfacial reactions.(1) L5 beryllium chalcogenides.(6) 782 coarsening.(8) 941 Al/Ti.(7) 829 bipolar transistor . (5)442 Coffin-Manson’s law.(7) 866 AlGaAs. (8) 979 birefringence. . (3)122 colloid .(5) 433 AlGalnP. (3) 122 blocking voltage .. . (4) 335 complex permittivity.(6) L40 AlGaN.(4) 190, (4)206 bondability. .(11)1211 composition uniformity. (6) 718 AlGaN/GaN.(4) 210 boron . .(7) 833 compound energy model.(8) 961 AlGaP. (3) 132 boron shallow contact metal.(6) 772 AllnP.(3) 132 junctions.(12) 1291, (12) 1296 contacts.(1) 24, (8) 929, (8) 998 AlInP/GaAs.(1) 17 Bragg reflector .... . (2)55 continuous wave (CW) AllnSb.(6) L43 Bridgman-Stockbarger crystal operation.(3) 106 AIN .(4) 179, (4)215, (4)238, growth. (6) 556 cooling curve.(3) 97 (7)918 brittle-ductile transition... (10) 1107 copper.(6) 573 alumina.(10) 1104 bromine.(6) 684 copper powder.(11) 1199 aluminum.(12) 1315 buffer layer.(3) 127 covalency.(6) 782 aluminum metallization... (11) 1211 C crack defect.(7) L47 aluminum oxide. (7) 918 crack formation. (12) 1367 c-axis orientation.(7) 876 Al^Ga,_^.(4) 229 crack propagation. (11) 1229 C-doped DHBT structures.(2) 69 amorphous chromium CrB.3. (1) 12 C2CIF5. (4) 185 silicide. (11) 1268 creep. (11) 1223 CaF^.(3) 127 amorphous thin films. (11) 1268 creep resistance. (11) 1216 CALPHAD method.(11) 1161 annealing.(1) 17, (2) 59, (4) 179, critical field.(4) 335 capacitance measurement.... (5) L29 (6)709,(8)941,(11) 1248 cross hatch.(6) 564, (6) 615 capacitance-voltage (C-V) annealing effects.(11) L72 CsLiBgOjo.(3) 127 measurements. (7)871 anodic oxide.(9) 1034 Cu-Sn intermetallics.(11) 1167 carbon doped.(9) L61 anti-phase domain (APD)-free CuInSe2.(5) 433 carrier concentration depth growth. (7) 900 CuInTe^.(12) 1351 profile.(5) L26 anti-phase domains (APDs).. (5) 451 cut-off wavelength.(6) 718 carrier relaxation dynamics . (6) 752 antiphase boundary (APB). (9) 1010 cycle time.(5) 402 CdSe/ZnMgSSe.(2) 73 antisite arsenic.(5) 472 CZT.(6) 788 CdTe.(6) 521, (6) 550, (6) 610, argon plasma treatment... (11) 1262 (8) 948, (8) 961 D arsenic. (6) 605 CdTe/Si.(6) 550, (9) 1047 arsenic doping.(6) 595, (6) 600 5-doping.(9) L61 CdTe;N.(6) 756 asymmetric double quantum well dark current characteristics. (7) 858 CdZnTe.(6) 527, (6) 556, (ADQW).(9) 1007 deep centers.(10) L68 (6) 564, (6) 657, (6) 800, (6) 807, atomic force microscopy deep level.(8) 979 (6)813, (8) 948 (AFM)..-..(4) 308 deep traps.(7) 871 chalcopyrites. (12) 1351 atomic hydrogen assisted deep-ultraviolet radiation .... (5) 446 charge scattering.(4) 229 molecular beam epitaxy defect(s).(2) 62, (3) L17, (4) 266, (MBE).(1)36 CHCI3.(4) 185 (5) 462, (6) 564, (6) 573, (6) 583, atomic layer epitaxy (ALE) .. (6) 521 chemical beam epitaxy (6) 605, (6) 615, (6) 634, (6) 640, (CBE).(1) LI (5) 409, (5)442 Au coating.(7) L47 (6)782,(8)961,(10) 1124 chemical diffusivity .(12) 1362 1382 1383 deposition and annealing.(8) 929 electron cyclotron resonance galvanic corrosion effects.(2) 89 deposition and annealing (ECR) plasma etch.(2) 69 gamma-ray response.(6) 788 technique.(8)998 electron cyclotron resonance gallium nitride (GaN). , (4) 160, depth profiling. (5) 479 molecular beam epitaxy (4)171,(4) 175,(4) 179, (4) 196, diamond film(s).(1) 30, (11) 1148 (ECR-MBE).(7) 829 (4) 200, (4) 215, (4) 222, (4) 229, diamond-like carbon.(1) 44 electron mobility. (4) 229 (4) 233, (4) 238, (4) 246, (4) 255, diamond-like carbon film.(1) 41 electron paramagnetic (4) 261, (4) 266, (4) 282, (4) 288, (4) 342, (4) 365, (5) L26, (5) L32, dielectric constant resonance (EPR).(6) 813 (5) L35, (7)915, (8)L58, measurement.(6) L40 electron trapping. (7) 908 (11)1112,(11) 1236,(12) 1329 differential scanning electrophotographic GaN film.(4) 185 properties.(1)41 calorimetry.(3) 97, (11) 1199 electroreflectance.(5) 484 GaP.(3) 114 differential thermal analysis emission.(10) 1099 gap filling. (11) 1262 (DTA).(12) 1334 emissivity.(12) 1323, (12) 1341 GaP-Al,Ga, ^.(9) 1053 diffusion.(4) 313, (6) 583, (6) 610, GaSb.(5)466 encapsulation. (8) 954 (12)1286,(12) 1315 endpoint detection.(10) 1073 gate insulators.(7) 918 diffusion and kinetically controlled etching. (3) 114 environmentally sensitive gate oxide reliability.(4) L21 diffusion barrier... (4) 330, (12) 1372 fracture.(10) 1107 gate oxides.(8) 936 diffusion path.(11) 1154 epitaxial growth.(7) 891 gate recess.(7) L51 diffusion x-ray diffraction. (6) 583 epitaxial lift-off (ELO) Ge outdiffusion. (7)900 diffusion-reaction method.(3) 110 Ge substrates.(6) 542 modeling. (11) 1177 epitaxy.(1) 1, (7) 833, gold ball bonding. (11) 1211 diluent. (4) 238 (11) 1138,(11)L72 grain boundary diffusion .. (11) 1167 Er-implantation.(4) 246 grain coarsening.(11) 1167 dislocation)s).(4) 292, (6) 583, etch damage.(10) 1128 growth characteristics. (8) 948 (6) 640, (7) 826, (9) 1047 etch pit density (EPD).(2) 85 growth mechanisms. (8) 948 dissolution kinetics. (11) 1199 etching.(6) 788, (7) L51 distribution coefficient. (6)648 H eutectic tin-lead.(11) 1223 donor doping.(4) 229 exciton.(9) 1007 H,PO,.(5) L32 dopant-selective etching. (4) 282 halide vapor phase epitaxy F doping.(4) 206, (4) 215, (4) 238, (HVPE).(5)L35 (6) 504, (6) 573, (6) 605, (6) 648 fabrication yield. (7) 821 hardness.(1)41 double heterojunction bipolar facet growth.(1)L1 heat dissipation. (11) 1254 heteroepitaxy.(6) 550, (9) 1047 transistor (DHBT) failure analysis.(6) 615 structures. (8) 954 fatigue crack growth rate.(8) 941 heterojunction.(5) L29, (7) L51 heterojunction bipolar transistor double heterojunction bipolar fatigue life.(7) 866, (11) 1229 (HBT).(1) 17, (12) 1372 transistors (DHBTs).(11) 1244 Fermi-level pinning. (6) 772 heterojunction diode.(4) 296 double heterostructure.(9) 1053 film stress.(11) 1262 heterostructure(s)... (4) 210, (6) 546, dry etching.(4) 166, (8) 972 films.(1) 44, (2) L9 dry processing. (6) 689 FLARE™ 2.0.(10) 1088 (6)740,(8) 1003 dual emissin laser induced flash annealing.(12) 1286 Hg,_,CdJe.(2)51, (7)891 flourescence. (10) 1082 flip chip bonding. (8) 985 HgCdTe.(6) 500, (6) 504, (6) 507, ductility.(11) 1229 flux.(11) 1205 (6) 510, (6) 532, (6) 542, (6) 546, DyP.(5) 405 focal-plane arrays (FPAs).(6) 550 (6) 550, (6) 573, (6) 579, (6) 583, fracture.(7) 821 (6) 589, (6) 595, (6) 600, (6) 605, E fracture mechanics.(9) 1059 (6) 615, (6) 634, (6) 640, (6) 648, effective heat of free exciton.(9) 1053 (6) 651, (6) 657, (6) 661, (6) 672, formation.(12) 1334 friction.(11) 1254 (6) 689, (6) 694, (6) 698, (6) 703, elastic constants.(6) 782 Frolich interaction.(6) 752 (6)709,(6)718,(6)722,(6)727, electric current effect.(11) 1193 G (6)747 electrical activation. (4) 358 electrical current.(1) L5 GaAlAs. (2) 55 HgCdTe-MISFET.(6)668 electrical properties.(6) 527, GaAs.(5)446,(5)472,(5)479, HgCdTe/Si.(6) 550 (12)1351 (7)821,(7)826,(11) 1240 HgTe/CdTe superlattices.(6) 680 electrically conducting GaAs (110).(2)85 high field tunneling.(7) 838 adhesives.(11) 1199 GaAs on Ge.(9) 1010 high resolution electron electrode.(5) 418 GaAs/Ge.(7) 900 microscopy (HREM). (5) 466 electroless copper. (7)923 GaAs/Ge films.(5)451 high resolution x-ray electroless nickel (EN).(11) 1205 GaAsN.(5)484 diffraction (HRXRD). (2)81 electromigration....(1) L5, (11) 1193 GaF^.(2)55 high-frequency electron cyclotron resonance GalnP ....(3) 122, (5)409, (10)1117 parameters.(9) 1022 GaInP/GaAs.(1) 17, (5) 442 high-index substrates.(1) 36 (ECR).(1)44,(6)657 1384 hillocks.(6) 624 interdiffused-multilayer- liquid phase epitaxy (LPE).... (2) 51, HNO3.(6) 684 process. (6) 510 (4) 288, (4) 292, (5) 438, (6) 564, hot carrier mobility. (8) 936 interdiffusion.(6) 672, (6) 680, (6) 615, (6) 648, (6) 684, (6) 709, Hotliner. (12) 1323 (11)1154 (6) 727, (8) 979, (8) 1003 hydride vapor phase epitaxy interface trap.(6) 684 liquid phase growth.(12) 1351 (HVPE).(4) 288,(10) 1112 interface(s).(8) 929, (11) 1138 lithium.(6) 573 hydrogen.(5) L35 interfacial reaction(s).(11) 1154, long wavelength infrared hydrogen etching. (4) 308 (11) 1161,(11) 1193,(11) 1199 (LWIR).(6) 740 hydrogen plasma. (9) 1059 interfacial structure.(11) L72 low doping.(4) 300 hydrogenated amorphous intermetallic(s).(11) 1154, low temperature annealing.. (7) 829 silicon .(11) 1268 (11) 1193,(11) 1199 low temperature growth.(5) 479 hydrothermal processing.. (10) 1068 intermetallic compound... (11) 1161, low temperature molecular 1 (11)1177 beam epitaxy (LT MBE).. (5) 472 intermetallic compound low-K dielectric.(10) 1088 I- III-VI2 semiconductors... (12) 1351 growth. (11) 1167 luminescence.(4) 304 II- VI.(6) 494 intermetallic growth.(11) 1177 M II- VI compounds .... (6) 763, (6) 769, internal electric fields.(6) 788 (6)782 interphase diffusion.(8) 941 magasonic cleaning. (10) 1095 III- nitrides. (4)276 InTlAs.(6) 536 magnetic multilayers.(8) 972 III-V nitrides.(4) 166 In^Ga,_^As.(10) L64 magnetic storage devices.(8) 972 III-V semiconductors.(3) 114 iodine doping.(6) 527 magnetoresistance.(1)1 implant activation. (4) 370 ion implantation .... (4) 179, (4) 358, magnetotransport.(6) 668 impurity doped. (6) 579 (4) 370, (5) 377, (6) 583, (6) 703, mask.(4) 175 in situ clean.(6) 651 (6) 722,(7) 833, (9) 1030 mass transpot limited region.(3) L13 in situ control.(6) 500 ion implants .... (12) 1291, (12) 1296 MBE growth.(5) 405 ionization rates.(4) 335 in situ monitoring.(6) 521 MCT.(6)648, (6)733 IR detectors.(6) 542 in-situ. (4) 190 mechanical properties.(7) 866 InAlAs.(7)L51, (9) 1043 iron nitride film.(4) 185 meltetch.(2) 51 InAs.(6) 536 iron oxide.(10) 1068 mercury-cadmium-telluride . (6) 490 isothermal fatigue.(7) 866, InAs quantum dots.(9) 1030 metal contacts.(11) 1236 (11) 1223,(11) 1229 InAs/GaAs.(2) 59, (4) 427 metal insulator semiconductor InAs/GalnSb.(2) 77 ITO.(9) 1017 (MIS).(6)684 index of refraction.(6) 703 J metal oxide semiconductor indium phosphide.(12) 1358 junction breakdown.(4) 335 (MOS).(4)353, (4)L21, inductively coupled plasma junction field-effect transistor (7)838 ,(12) 1358 (ICP) etching. (8) 972 (JFET).(10) L64 metal oxide semiconductor (MOS) infrared (IR) detector(s).(6) 490, capacitor. (10) 1124 (6) 494, (6) 500, (6) 510, (6) 542, K metal oxide semiconductor field (6) 546, (6) 550, (6) 589, (6) 640, kink effect.(8) L54 effect transistors (6) 651, (6) 733, (6) 747 KOH.(5)L32 (MOSFETs).(8) 936 infrared (IR) devices.(6) 727 metal-InP phase L infrared focal plane array! s) equilibria. (1) 24 lanthanum manganites. (1) 1 metal-semiconductor field effect (IRFPA).(6) 564, (6) 672 laser beam induced current transistor (MESFET).(7)826 infrared reflectance.(4) 300 InGaAs .. (3) 106, (7) L51, (9) 1038, (LBIC).(6)661 metal-semiconductor-metal (9)1043, (12)1372 laser diode(s).(3) 110, (4) 160, (MSM) detectors.(6) 807 InGaAs/GaAs.(2) 81, (9) L61 (8) 985 metal/semiconductor InGaAs/InP.(2) 69, (8) 954, laser ridge structures.(2) 89 interface.(4) 345 (11)1244 laser welding.(7) L47 metalorganic chemical vapor InGaAsSb.(9) 1038, lasing.(2) 73 deposition (MOCVD). (4) 190, InGaN.(4) 160 lateral epitaxial ovegrowth .. (4) 233 (4)206, (6)L43, (11) L72 InGaP.v3) 132, (9) 1017 lattice defects.(7) 833 metalorganic molecular beam injection laser. (3) 106 lattice mismatch . (4) 200, (11) 1248 epitaxy (MOMBE).(6)600, InN.(7)915 lattice parameter.(4) 215 (6)634 InP.(1)8, (1)24, (2)89, (5)462, lead free solder.(3)97, (7)866, metalorganic vapor phase epitaxy (5) 479, (8) 1003 (11) 1161,(11) 1229 (MOVPE).(4) 222, (4) 233, InP:Fe.(7) 883 lifetime.(4) 160, (6) 698, (6) 709 (4) 238, (4) 342, (5) 466, (6) 527, InSb.(5)414 LiGa02.(8) L58 (6)624,(6) 763, (6) 769, (8) 948, interband cascade laser.(2) 77 line-beam.(10) 1104 (9) L61 interconnects.(7) 923 microgravity.(6) 556