Table Of Content

- CRYSTAL GROWTH ELSEVIER Achtziger, N.. see Reislohner Adachi, G., see Dabkowski, A Agarwal, M.K Ahmed, M.U., see Irvine, Amir, N., see Levy, M Ammerahl, | growth of the spin-l (Ca,La),,Cu,,0,, and observatiot1 one-dimensional disorder Arafune, K. and A. Hirata utal Marangoni conve system 97 1999) Ard, C.K., see Maxey, ¢ D 197 (1999) Arnoux, T., see von Bardeleben. H.J 197 (1999) As, D.J., see Lima, A.P l 1999) Asomoza, R.. see Salazar-Hernandez, B 197 (1999) Aswal., D.K., M. Shinmura, Y. Hayakawa and M. Kumagawa, In situ measurement of th growth rate of YBa,Cu;Q, single crystal 197 (1999) Ataka, M., see Michinomae, M 97 (1999 Atherton, J., see Zaitseva, N 197 (1999) | ipounds measured | Atroshchenko, L.V., L.P. Gal’chinetsku, S.N | coil d tion analysis (ERDA) Galkin, V.D. Ryzhikov, V.I. Silin and N.I Shevtsov, Distribution of tellurium melt-grown ZnSe(Te) crystals Atroshchenko, L.V., L.P. Gal’chinetskii Galkin, V.D. Ryzhikov and V.I lin. Bonnet-Gam Structure defects and phase transition Boudeulle see Metrat tellurium-doped ZnSe crystals 7 (1999) 4 Bouix, J.. see Dumont, H Ausloos, M., see Vandewalle, N 197 (1999) 3] Boulon. G.. see Ferriol. M Auvray, L., see Dumont, H ( 1999) 755 Boulon. G.. see Métrat. G Bremond. G., see Zerrai, A Bahir, G.. see Mainzer, N 97 (1999) 5-¢ Bremond, G., see Zumbiehl. A Bak-Misiuk, J., see Mycielski, A 7 (1999) Bremond, G Balakumar, S. and H.C. Zeng, Growth modes Brenier, A., see Metrat. G in vapour-phase prepared orthorhombic Briat. B I Ramaz, B. Farid, K. Shcherbin and molybdenum trioxide crystals 7 (1999) H.J. von Bardeleben, Spectroscopic charac- Baldochi, S.L., see Shimamura, K 197 (1999) terization of photorefractive CdTe :G e Bao, C.L., see Cai, L.C 97 (1999) Bryja, L., M. ¢ 1lorga J. Misiewicz, A. Zaleski Barbe, M., see Mora-Sero, | 97 (1999) 7 P. Becla and W.C. Chou, Magneto-optical Barmin, I.V., see Senchenkov, A.S 7 (1999) j studies of quaternary diluted magnetic Beckermann, C., see Pines, V 7 (1999) ; semiconductors 197 (1999) Becla, P., see Bryja. L 197 (1999) 1 Burchard, A., see Desnica, 197 (1999) 0022-0248/99/$ — see front matter © 1999 Elsevier Science B.V. All rights reserved PII: S0022-0248(99)00036-6 1016 {uthor index ‘ahen, D., see Lyahovitskaya, V 197 (1999) 106 Crystal growth of aluminum tungstate ‘ahen, D., see Lyahovitskaya, V 197 (1999) Al,(WO4); by the Czochralski method ‘ahen, D., O Melamed and I. Lubomirski, from nonstoichiometric melt 197 (1999) Can percolation control doping, diffusion Dammak, M., see Zerrai, A 197 (1999) and phase segregation in (Hg,Cd) Te? 7 (1999) Danilov, D.A., see Gaienko, P.K 197 (1999) ul, L.C., H. Chen, C.L. Bao, Q. Huan and Davydov, A.A., see Melnikov, A.A 197 (1999) J.M. Zhou, RHEED characterization of Dazord, J., see Dumont, H 197 (1999) InAs/GaAs grown by MBI 197 (1999) De Cogan, D., see Rak, M 197 (1999) ‘ampion, R.P., see Cheng, T.S 197 (1999) De Theije, F.K., A.R.A. Zauner, P.R. Hage- Capper, P., see Maxey, C.D 197 (1999) man, W.J.P. van Enckevort and P.K. Lar- ‘apper, P., see Lane, D.W. 197 (1999) sen, An atomic force microscopy study of ‘arlsson, N see Seifert, W 197 (1999) a temperature dependent morphology ‘arman, L. , see Zaitseva, N 197 (1999) transition of GaN grown on sapphire by ‘atalano, M., see Passaseo, A 197 (1999) MOCVD 197 (1999) ‘hai, B.H.T., see Ye, Q 7 (1999) Deicher, M., see Desnica, U.V 197 (1999) “hait, A., see Pines, V 197 (1999) Demich, M.V., see Ciach, R 197 (1999) ‘hani, V.I., see Takeda, H 197 (1999) Deshpande, M.P., P.D. Patel, M.N. Vashi and hen, H., see Cai, L.C. 7 (1999) M.K. Agarwal, Effect of intercalating in- ‘hen, Z., see Shi, W. 7 (1999) dium in WSe; single crystals 197 (1999) Cheng, T.S., see Orton, J.W 7 (1999) Desnica, U.V., I.D. Desnica-Frankovic, R Cheng, T.S., S.V. Novikov, V.B. Lebedev, R.P Magerle, A. Burchard and M. Deicher, Ex- Campion, N.J. Jeffs, Yu.V. Melnik, D.V perimental evidence of the self-compensa- Tsvetkov, S.I. Stepanov, A.E. Cherenkov, tion mechanism in CdS 197 (1999) V.A. Dmitriev, D. Korakakis, O.H Desnica-Frankovic, I.D., see Desnica, U.V 197 (1999) Hughes and C.T. Foxon, The initiation of Didier, G.. see Lemasson, P 197 (1999) GaN growth by molecular beam epitaxy Dinescu, M., see Verardi, P 197 (1999) on GaN composite substrates 7 (1999) Dinu, R., see Verardi, P 197 (1999) ‘herenkoy, A.E., see Cheng, T.S 7 (1999) Dmitriev, V.A., see Cheng, T.S 197 (1999) Cherkaoui, K., see Zerrai, A (1999) Domagata, J., see Mycielski, A 197 (1999) Cherkaoui, K . see Zumbiehl, A (1999) Dumont, H., | Auvray, J. Dazord. \ Chernikoy, V., see Ryzhikov, V 7 (1999) Souliere, Y Monteil, J. Bouix and A Chibani, L., see Fougéres, P 197 (1999) Ougazzaden, Surface morphology of In- Chou, W.C., see Bryja, L 7 (1999) GaAs and InP materials grown with Choubey, A., see Murthy, R.V.A 197 (1999) trimethylarsenic and arsine on vicinal InP Chun, C.-H., see Lee, Y.-S 7 (1999) substrates 197 (1999) Chun, C.-H., see Lee, Y.-S. (1999) Durose, K., P.R. Edwards and D.P. Halliday, Ciach, R.. M.V. Demich, P.M. Gorley, Z. Kuz- Materials aspects of CdTe/CdS solar cells 197 (1999) nicki, V.P. Makhniy, I.V. Malimon and Z Dutta, P.S and A.G Ostrogorsky, Strong Swiatek, Photo and X-ray sensitive hetero- band gap narrowing in quasi-binary structures based on cadmium telluride (1999) (GaSb), — (InAs), crystals grown from Cibert, J., see Siviniant, J. 7 (1999) melt 197 (1999) Cingolani, R., see Passaseo, A. 7 (1999) Dutta, P.S. and A.G. Ostrogorsky, Segrega- Ciorga, M., see Bryja, L. (1999) tion of tellurium in GaSb single crystals Cloots, R., see Vandewalle, N (1999) and associated diffusion coefficient in the ‘onibeer, G.J., see Lane, D.W. (1999) solute layer 197 (1999) Constantino, M.E., see Salazar-Hernandez, B 7 (1999) Coquillat, D., see Siviniant, J 7 (1999) Edwards, P.R., see Durose, K 197 (1999) Cur, FZ. see Luo; ZS. 7 (1999) Endoh, Y., see Kaneko, N 197 (1999) Cui, L., see Zhu, H. 7 (1999) Cui, W.., see Guan, Q 7 (1999) 1012 Faqir, H., see Mansori, M. 197 (1999) Cuisinier, F.J.G., see Ngankam. P.A. 7 (1999) 927 Farid, B., see Briat, B 197 (1999) Faschinger, W., Doping and contacting of Dabkowska, H.A.. see Dabkowski, A. 197 (1999) 879 wide gap II-VI compounds 197 (1999) Dabkowski, A. H.A. Dabkowska, J. Fediv, V.I., see Savchuk, A.I 197 (1999) Greedan, G. Adachi, Y. Kobayashi, S Feichouk, P. . see Vackova, S 197 (1999) Tamura, M. Hiaraiwa and N Imanaka, Feltgen, T . see Fiederle, M 197 (1999) luthor index Feng, J.. W.D. Huang, X. Lin, Q.Y. Pan, T. Li Gamarnik, M.Y., Crystallization y and Y.H. Zhou, Primary cellular/dendritic lecular spacing selection of Al-Zn alloy during unidirectional solidification Garcia, J.A smon, V. Mun 07 7 ina Feng, S., see Zhu, H Triboulet, Effect of plastic deformation on Ferriol, M., Y. Terada, T. Fukuda and G photolumine bulk mo! Boulon, Laser heated pedestal growth and crystals characterization of zinc lithium niobate Gartsman, K., see Lyahovitskay crystals 97 (1999) Gavriloy, S., see Belogorok Feychuk, P., see Panchuk, O 197 (1999) Gelabert, M.C., R.A Fiederle, M., T. Feltgen, J.M einhardt, M. Ro- Phase stability. solubility galla and K.W. Benz, State of the art of f PbTiO (Cd.Zn) Te as gamma detector ] 999) see MoBner. R Flueraru, C., see Verardi, P 1999) see Verardi, P Fochuk, P., O. Korovyanko and O. Panchuk. High-temperature point defect equilibrit in CdTe modelling 1999) Fochuk, P., see Panchuk, O 1999) Fougeres, P., L. Chibani, M. Hageali, J.M Koebel, G. Hennard, A. Zumbiehl, P Siffert and M. Benkaddour, Zinc segre tion in HPB grown nuclear detector g Greedan Cd, _,£n,Te (1999) Greenberg. Fougeres., P., see Zerrai, A 1999) plications of Fougeres, P., see Zumbiehl, A (1999) Guan, Q X. Hu Fougeres, P., see Zumbiehl, A (1999) Cui and Y Foxon, C.T., see Orton, J.W 7 (1999) Foxon, C.T., see Cheng, T.S (1999) Franc, J.. E. Belas, A.L. Toth, H. Sitter, P Hlidek, P. Moravec and P. Hoschl, Diffu- Guers yv, V.. see Murthy, sion length of minority carriers in Gui, X., see Rak, M (CdZn) Te and (HgCd) Te single crystals Guo, J.Q.. T.J measured by EBIC method 7 (1999) Solid-liquid interface in Frasunyak, V.M., see Savchuk, A.I 7 (1999) of a decagonal Al-72 Co-16 Freiberg, M.. see Schonherr, I 7 (1999) crystal Frey, T., see Lima, A.P 7 (1999) Gustafsson, A.. see Seifert, W Frolow, F., see Lyahovitskaya, V 7 (1999) Fujisawa, Y., see Kubota, N 7 (1999) Hage-Ali, M., see Zerrai, A Fukuda, T., see Takeda, H 7 (1999) Hage-Ali, M., see Zumbiehl, A Fukuda, T., see Ferriol, M 7 (1999) Hage-Ali, M., see Zumbiehl, A Fukuda, T., see Shimamura, K 7 (1999) Hageali, M.. see Fou Furukawa, Y.. K. Kitamura, E. Suzuki and K Hageman, P.R., see de Theije, Niwa, Stoichiometric LiTaO, single crys- Halliday, D.P., see Durose, K tal growth by double crucible Czochralski Hao, M:S., see Wang, J method using automatic powder supply Hawksworth, A.. W.M. Rainfo rth and H system 7 (1999) Jones, Solidification microstructure selec- tion in the Al-rich Al-La A] Ce and Gal’chinetskii, L.P., see Atroshchenko, I \ 7 (1999) Al-Nd systems 1999) Gal’chinetskii, L L.P., see Atroshchenko, L.V 7 (1999) Hayakawa, Y., see Aswal, D.K (1999) Gal’chinetskil, L.P., see Ryzhikov, V 7 (1999) Hearne, S., see Lane, D.W (1999) Galenko, P.K. and D.A. Danilov, Model for Heime, K., see Liu, Q 7 (1999) free dendritic alloy growth under inter- Hennard, G., see Fougeres, P 7 (1999) facial and bulk phase nonequilibrium con- Henry, A., see Syvajarvi, M 7 (1999) ditions 197 (1999) Heuken, M., see Liu, Q 7 (1999) Galkin, S.N., see Atroshchenko, L.V 197 (1999) Hiaraiwa, M., see Dabkowski, A 7 (1999) Galkin, S.N., see Atroshchenko, L.V 197 (1999) Hidaka, Y., see Kaneko, N 7 (1999) S18 Galkin, S.N., see Ryzhikov, V 197 (1999) Hiralal, 1.D.K., see Sweegers, € 7 (1999) a~ ? 1 4 1018 {uthor index Hirano, T., see Guo, J.Q 197 (1999) 963 Katsuragi, T., see Kaneko, N. 197 (1999) Hirata, A., see Arafune, K. 197 (1999) 811 Kavokin, A.V., see Siviniant, J. 197 (1999) Hlidek, P., see Franc, J. 197 (1999) 593 Kawabe, M., see Jang, K.-Y. 197 (1999) Hooper, S.E., see Orton, J.W 197 (1999) Kawanowa, H. and Y. Gotoh, Crystal growth Hoschl, P., see Franc, J. 197 (1999) of WSi, on a W(1 10) surface 197 (1999) Hoshizaki, H., see Ueno, Y 197 (1999) Keiper, D., R. Westphalen and G. Landgren, Hosoya, S., see Kaneko, N. 197 (1999) Comparison of carbon doping of InGaAs Hu, X., see Guan, Q 197 (1999) and GaAs by CBr, using hydrogen or ni- Huan, Q., see Cai, L.C 197 (1999) trogen as carrier gas in LP-MOVPE 197 (1999) 197 Huang, W.D., see Feng, J 197 (1999) Khanin, E., see Levy, M. (1999) Hughes, O.H., see Cheng, T.S 197 (1999) Kharachenko, L., see Murthy, R.V.A. 197 (1999) Humphreys, C.J., see Walther, 1 197 (1999) Kikuma, I., see Udono, H. 197 (1999) Hwang, Y.G., see Kim, K.C 7 (1999) Kim, J.H., see Kim, T.W. 197 (1999) Kim, K.C., K.S. Nahm, E.-K. Suh and Y.G Iga, K., see Miyamoto, T. (1999) Hwang, The surface modification of Ilaschouk, M., see Vackova, S (1999) Si(111) substrates with SiN, for the Ilashchuk, M., see Panchuk, O (1999) growth of high quality B-SiC epilayers 197 (1999) Imanaka, N., see Dabkowski, A (1999) Kim, T.W., J.-H. Kim, H.L. Park and J.Y. Lee, Irvine, S.J.C., A. Stafford and M.U. Ahmed, Structural property and interband transi- Substrate/layer relationships in II-VIs 7 (1999) tion studies on Cd,Zn, -,Te/ZnTe coupled Ishikawa, H., see Nishijima, Y (1999) step and rectangular quantum wells 197 (1999) 799 Ishikawa, Y., see Wang, J (1999) Kitamura, K., see Kaneko, N 197 (1999) 818 Ivanov, I.G., see Syvajarvi, M 197 (1999) Kitamura, K., see Furukawa, Y 197 (1999) S89 Kobayashi, Y., see Dabkowski, A 197 (1999) 879 Jacob, K.I., see Moller, J. 197 (1999) Koebel, J.M., see Fougeéres, P 197 (1999) 641 Jager-Waldau, A., see Birkholz, M 197 (1999) Koebel, J.M., see Zerrai, A. 197 (1999) 646 James, L., see Zaitseva, N 197 (1999) Koebel, J.M., see Zumbiehl, A 7 (1999) 650 Jang, K.-Y., Y. Okada and M. Kawabe, Effect Koebel, J.M., see Zumbiehl, A (1999) 670 of hydrogen in AlGaAs grown by atomic Kohler, U., see Lima, A.P. (1999) 31 hydrogen-assisted molecular beam epitaxy 197 (1999) Kong, M.-Y., see Zhang, J.-P. 197 (1999) 368 Janzén, E., see Syvajarvi, M. 197 (1999) Korakakis, D., see Cheng, T.S. 197 (1999) 12 Janzen, E., see Syvajarvi, M. (1999) Korbutjak, N.D., see Korbutyak, D.V. (1999) 659 Jayavel, R., see Ushasree, P.M 7 (1999) Korbutyak, D.V.. S.G. Krylyuk, P.M. Jeffs, N.J., see Cheng, T.S. 7 (1999) Tkachuk, V.I. Tkachuk, N.D. Korbutjak Jiang Rihong, see Yang Shangfeng >7 (1999) and M.D. Raransky, Growth and charac- Johansson, J., see Seifert, W. 197 (1999) terization of high-resistivity CdTe<Cl (1999) Jones, H., see Hawksworth, A 197 (1999) Korchnoi, V., see Lisiansky, M 197 (1999) Korostelin, Yu.V., V.I. Kozlovsky, AS. Ka, O., see Thiandoume, C. 197 (1999) Nasibov and P.V. Shapkin, Vapour Kagawa, H., see Kanie, H 197 (1999) growth and doping of ZnSe single crystals 197 (1999) Kageyama, T., see Miyamoto, T 197 (1999) Korovyanko, O., see Fochuk, P. 197 (1999) Kakanakova-Georgieva, A., see Syvajarvi, M 197 (1999) Koukitu, A., T. Taki, N. Takahashi and H Kam, C.H., see Shi, W. 197 (1999) Seki, Thermodynamic study on the role of Kaneko, N., S. Ueno, J. Yano, T. Katsuragi hydrogen during the MOVPE growth of and K. Sato, Impurity effects on crystalli- group III nitrides 197 (1999) zation rates of n-hexadecane in oil-in- Kowalczyk, L., see Mycieiski, A 197 (1999) water emulsions 197 (1999) Koyama, F., see Miyamoto, T 197 (1999) Kaneko, N., Y. Hidaka, S. Hosoya, K Kozlovsky, V.1., see Korostelin, Yu.V 197 (1999) Yamada, Y. Endoh, S. Takekawa and K. Krapukhin, V.V., see Senchenkov, A.S. 197 (1999) Kitamura, Optimum crucible material for Krishnamurthy, D., see Kumaragurubaran, S 197 (1999) growth of Pr,_,.Ce,CuQOy, crystal 197 (1999) Krylyuk, S.G., see Korbutyak, D.V 197 (1999) Kanie, H., H. Kagawa and T. Kato, Crystal Kubalek, E., see Liu, Q 197 (1999) growth of SrS from Te solution and its Kubota, N., Y. Fujisawa, M. Yokota and J.W. optical properties 197 (1999) Mullin, Pseudo-solubilities of potassium Kaplan, L., see Lyahovitskaya, V 197 (1999) sulfate in water in the presence of crystal- Kaplan, L., see Lyahovitskaya, V 197 (1999) growth and -dissolutionsuppressoriron(III) Kato, T., see Kanie, H. 197 (1999) impurities 197 (1999) {uthor index Kudriavtsev, Yu.A., see Orton, J.W 197 (1999) and G. Vanderschaeve, Electron- Kumagawa, M., see Aswal, D.K 197 (1999) irradiation enhanced dislocation glide Kumaragurubaran, S., D. Krishnamurthy. C II-VI semiconductors Subramanian and P. Ramasamy, Invest- Levy, M., N. Amir, E.K hanin, Y. Nemirovsky igations on the growth of Bi,TeO; and and R Beserman Characterization of TeO, crystals 197 (1999) CdTe substrates and MOCVD Kuznicki, Z., see Ciach, R 197 (1999) Cd, _,Zn,Te epilayers 1999) Li, H.X., see Wu, J 1999) Lakeenkov, V.M., V.B. Ufimtsev, N.] Li, J.-M., see Zhang, J.-P Shmatov and Yu.F. Schelkin, Numeric Li, T., see Feng. J simulation of vertical Bridgman growth of Li, W.Z., see Luo, Z.S Cd,_,Zn,Te melts 197 (1999) i Zhengdong, see Yang Shangfeng Lakin, E., see Mainzer, N 197 (1999) ima, A.P., T. Frey, U. Kohler, C. Wang, D.J Lakner, H., see Liu, Q | 97 ( 1999) As, B. Schottker, K. Lischka and D Lal, K., see Murthy, R.V.A 197 (1999) Schikora, Surface irregularities of MBI Lan, C.W., Effects of ampoule rotation on grown cubic GaN layers 1999) flows and dopant segregation in vertical in, C., see Zeng, J 1999) Bridgman crystal growth 7 (1999) in, L.-Y., see Zhang, J.-P 7 (1999) Landgren, G., see Keiper, D 7 (1999) in, X., see Feng, J 1999) Lane, D.W., G.J. Conibeer, D.A. Wood, K.D Lischka, K., see Lima, A.P 1999) Rogers, P. Capper, S. Romani and S isetskaya, E., see Ryzhikov, V 1999) Hearne, Sulphur diffusion in CdTe and the isiansky, M., V. Korchnoi, A Berner, | phase diagram of the CdS—CdTe pseudo- Muranevich and R. Weil, Improvement of binary alloy 7 (1999) CdTe substrate quality by acoustic treat- Larsen, P.K., see de Theije, F.K 7 (1999) ment 97 (1999) Liu, F.-Q., Z.-G. Wang, J. Wu, B. Xu, W. Zhou Lascaray, J-P., see Siviniant, J. 7 (1999) and J.-J. Qian, Size quantization effects in Lauck, R. and E. Schonherr, Isotopically pure InAs self-assembled islands on InP(00 1) ZnSe crystals grown from the vapor 7 (1999) Laudise, R.A., see Gelabert, M.C 7 (1999) at the onset of 2D-to-3D transition 197 (1999) Launay, J.C., see von Bardeleben, H.J 7 (1999) iu, N., see Shi, W 197 (1999) u, Q., H. Lakner, W. Taudt, M. Heuken. C Lebedev. V.B., see Cheng, T.S 7 (1999) Mendorf, K Heime and f Kubalek, Lee, C.-R., J.-Y. Leem, S.K. Noh, S.-J. Son and Structural properties of MOVPE-grown K.-Y Leem, Doping behavior _ of Ing. ;Gap.oN codoped with Si and Zn 197 (1999) ZnSe studied by X-ray diffractometry, atomic force microscopy and electron , C.-R., see Leem, J.-Y 197 (1999) nicroscopy 7 (1999) , C.S., see Zhang, Y.F 197 (1999) ju, Y., see Guan, Q 7 (1999) se, , JS..YT..,, sseeee KZihma,n g, T.YW. F 119977 ((11999999)) iu, Z., see Shimamura, K 7 1999) ongo, M., see Passaseo, A 7 (1999) . Y.-S. and C.-H. Chun, Transition from ott, K. and T. Nirk, High temperature elec- regular to irregular thermal wave by coup- trical conductivity in the phase transition ling of natural convection with rotating region 7 (1999) flow in Czochralski crystal growth 197 (1999) ott, K., M. Raukas, A. Vishnjakov and A Lee, Y.-S. and C.-H. Chun, Effects of a cusp Grebennik, High temperature electrical magnetic field on the oscillatory convec- conductivity in the Cu solubility limit tion coupled with crucible rotation in range in ZnS: Cu (1999) Czochralski crystal growth 197 (1999) ott, K. and I Turn, A method for the calcu- Leem, J.-Y., see Lee, C.-R 197 (1999) lation of defect equilibrium 711999) Leem, J.-Y.,C.-R. Lee, S.K. Noh and J.-S. Son, ubomirski, I., see Cahen, D (1999) RHEED oscillation studies of pseudomor- ui, P.Y., see Yoon, S.F (1999) phic InGaAs strained layers on GaAs sub- uo, Z.S., F.Z. Cui and W.Z. Li, Abnormal strate 197 (1999) refinement of grains in calcium phosphate Leem, K.-Y., see Lee, C.-R 197 (1999) films during a low temperature crystalliza- Lemasson, P., A. Riviere,G . Didier, A. Trom- tion 197 (1999) son-Carli and R. Triboulet, Low resistive usakowska, I , see Mycielski, A 197 (1999) ZnSe substrates 197 (1999) -usson, A., see Thiandoume, C 197 (1999) Lemasson, P., see Rzepka, E 197 (1999) ux-Steiner, M.C., see Birkholz, M 197 (1999) 1020 {uthor index Lyahovitskaya, V., L. Kaplan, J. Goswami Brenier and G. Boulon, Nucleation, mor- and D. Cahen, Post-growth, In doping of phology and spectroscopic properties of CdTe single crystals via vapor phase 7 (1999) Yb**-doped K Y(WO,), crystals grown by Lyahovitskaya, V., S. Richter, I Frolow, I the top nucleated floating crystal method 197 (1999) 883 Kaplan, Y. Manassen, K. Gartsman and Miao, X., Use of natural topaz as a transport- D. Cahen, Growth of single CulnSe, crys- ing agent in the vapor growth of potassium tals by the traveling heater method and tungsten oxide bronze fibres (1999) 1008 their characterization 197 (1999) Michinomae, M., M. Mochizuki and M Ataka, Electron microscopic studies on the MacMillan, M.F., see Syvajarvi, M 197 (1999) initial process of lysozyme crystal growth (1999) Magerle, R., see Desnica, U.V 197 (1999) Mihira, T., see Matsushita, H (1999) Magnea, N., see Bleuse, J 197 (1999) Misiewicz, J., see Bryja, L 7 (1999) Mainzer, N., E. Zolotoyabko, A. Berner, | Miyamoto, T., K. Takeuchi, T. Kageyama, F. Lakin, G. Bahir and A. Sher, Influence of Koyama and K. Iga, Chemical beam epi- structural defects on lattice parameter and taxy of GalnNAs/GaAs quantum wells measured composition of Hg,_,Cd,Te and its optical absorption property (1999) epilayers 197 (1999) Mo, Q.W.., see Wu, J (1999) Makhniy, V.P., see Ciach, R 197 (1999) Mochizuki, M., see Michinomae, M. 7 (1999) Malimon, I.V., see Ciach, R 197 (1999) Moller, J. and K.1. Jacob, Instability in com- Malm, J.-O., see Seifert, W. 197 (1999) petitive crystallization in porous viscoelas- Manassen, Y., see Lyahovitskaya, V 197 (1999) tic materials 197 (1999) Mansori, M., H. Faqir, P. Satre, A. Bendriss, Monteil, Y., see Dumont, H 197 (1999) Y. Syono and A. Sebaoun, A new single Mora-Sero, I., V. Munoz, M. Barbé and R. crystal growth method of Triboulet, Study of the chemically ac- (Bi,Pb),Sr,CaCu,O,. superconductor 7 (1999) tivated sublimation of ZnSe (1999) Marfaing, Y., State of the art and prospects of Moravec, P., see Franc, J. (1999) photorefractive CdTe (1999) Morishima, Y., see Wang, J (1999) Marfaing, Y., see Zerrai, A 197 (1999) Mo8ner, R. and G. Gerbeth, Buoyant melt Marrakchi, G., see Zerrai, A. 197 (1999) flows under the influence of steady and Marrakchi, G., see Zumbiehl, A 197 (1999) rotating magnetic fields 197 (1999) Marrakchi, G., see Zerrai, A. 197 (1999) Muhlstein, N., see Métrat, G. 197 (1999) Martinez-Tomas, C., V. 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Preview Journal of Crystal Growth 1999: Vol 197 Index

- CRYSTAL GROWTH ELSEVIER Achtziger, N.. see Reislohner Adachi, G., see Dabkowski, A Agarwal, M.K Ahmed, M.U., see Irvine, Amir, N., see Levy, M Ammerahl, | growth of the spin-l (Ca,La),,Cu,,0,, and observatiot1 one-dimensional disorder Arafune, K. and A. Hirata utal Marangoni conve system 97 1999) Ard, C.K., see Maxey, ¢ D 197 (1999) Arnoux, T., see von Bardeleben. H.J 197 (1999) As, D.J., see Lima, A.P l 1999) Asomoza, R.. see Salazar-Hernandez, B 197 (1999) Aswal., D.K., M. Shinmura, Y. Hayakawa and M. Kumagawa, In situ measurement of th growth rate of YBa,Cu;Q, single crystal 197 (1999) Ataka, M., see Michinomae, M 97 (1999 Atherton, J., see Zaitseva, N 197 (1999) | ipounds measured | Atroshchenko, L.V., L.P. Gal’chinetsku, S.N | coil d tion analysis (ERDA) Galkin, V.D. Ryzhikov, V.I. Silin and N.I Shevtsov, Distribution of tellurium melt-grown ZnSe(Te) crystals Atroshchenko, L.V., L.P. Gal’chinetskii Galkin, V.D. Ryzhikov and V.I lin. Bonnet-Gam Structure defects and phase transition Boudeulle see Metrat tellurium-doped ZnSe crystals 7 (1999) 4 Bouix, J.. see Dumont, H Ausloos, M., see Vandewalle, N 197 (1999) 3] Boulon. G.. see Ferriol. M Auvray, L., see Dumont, H ( 1999) 755 Boulon. G.. see Métrat. G Bremond. G., see Zerrai, A Bahir, G.. see Mainzer, N 97 (1999) 5-¢ Bremond, G., see Zumbiehl. A Bak-Misiuk, J., see Mycielski, A 7 (1999) Bremond, G Balakumar, S. and H.C. Zeng, Growth modes Brenier, A., see Metrat. G in vapour-phase prepared orthorhombic Briat. B I Ramaz, B. Farid, K. Shcherbin and molybdenum trioxide crystals 7 (1999) H.J. von Bardeleben, Spectroscopic charac- Baldochi, S.L., see Shimamura, K 197 (1999) terization of photorefractive CdTe :G e Bao, C.L., see Cai, L.C 97 (1999) Bryja, L., M. ¢ 1lorga J. Misiewicz, A. Zaleski Barbe, M., see Mora-Sero, | 97 (1999) 7 P. Becla and W.C. Chou, Magneto-optical Barmin, I.V., see Senchenkov, A.S 7 (1999) j studies of quaternary diluted magnetic Beckermann, C., see Pines, V 7 (1999) ; semiconductors 197 (1999) Becla, P., see Bryja. L 197 (1999) 1 Burchard, A., see Desnica, 197 (1999) 0022-0248/99/$ — see front matter © 1999 Elsevier Science B.V. All rights reserved PII: S0022-0248(99)00036-6 1016 {uthor index ‘ahen, D., see Lyahovitskaya, V 197 (1999) 106 Crystal growth of aluminum tungstate ‘ahen, D., see Lyahovitskaya, V 197 (1999) Al,(WO4); by the Czochralski method ‘ahen, D., O Melamed and I. Lubomirski, from nonstoichiometric melt 197 (1999) Can percolation control doping, diffusion Dammak, M., see Zerrai, A 197 (1999) and phase segregation in (Hg,Cd) Te? 7 (1999) Danilov, D.A., see Gaienko, P.K 197 (1999) ul, L.C., H. Chen, C.L. Bao, Q. Huan and Davydov, A.A., see Melnikov, A.A 197 (1999) J.M. Zhou, RHEED characterization of Dazord, J., see Dumont, H 197 (1999) InAs/GaAs grown by MBI 197 (1999) De Cogan, D., see Rak, M 197 (1999) ‘ampion, R.P., see Cheng, T.S 197 (1999) De Theije, F.K., A.R.A. Zauner, P.R. Hage- Capper, P., see Maxey, C.D 197 (1999) man, W.J.P. van Enckevort and P.K. Lar- ‘apper, P., see Lane, D.W. 197 (1999) sen, An atomic force microscopy study of ‘arlsson, N see Seifert, W 197 (1999) a temperature dependent morphology ‘arman, L. , see Zaitseva, N 197 (1999) transition of GaN grown on sapphire by ‘atalano, M., see Passaseo, A 197 (1999) MOCVD 197 (1999) ‘hai, B.H.T., see Ye, Q 7 (1999) Deicher, M., see Desnica, U.V 197 (1999) “hait, A., see Pines, V 197 (1999) Demich, M.V., see Ciach, R 197 (1999) ‘hani, V.I., see Takeda, H 197 (1999) Deshpande, M.P., P.D. Patel, M.N. Vashi and hen, H., see Cai, L.C. 7 (1999) M.K. Agarwal, Effect of intercalating in- ‘hen, Z., see Shi, W. 7 (1999) dium in WSe; single crystals 197 (1999) Cheng, T.S., see Orton, J.W 7 (1999) Desnica, U.V., I.D. Desnica-Frankovic, R Cheng, T.S., S.V. Novikov, V.B. Lebedev, R.P Magerle, A. Burchard and M. Deicher, Ex- Campion, N.J. Jeffs, Yu.V. Melnik, D.V perimental evidence of the self-compensa- Tsvetkov, S.I. Stepanov, A.E. Cherenkov, tion mechanism in CdS 197 (1999) V.A. Dmitriev, D. Korakakis, O.H Desnica-Frankovic, I.D., see Desnica, U.V 197 (1999) Hughes and C.T. Foxon, The initiation of Didier, G.. see Lemasson, P 197 (1999) GaN growth by molecular beam epitaxy Dinescu, M., see Verardi, P 197 (1999) on GaN composite substrates 7 (1999) Dinu, R., see Verardi, P 197 (1999) ‘herenkoy, A.E., see Cheng, T.S 7 (1999) Dmitriev, V.A., see Cheng, T.S 197 (1999) Cherkaoui, K., see Zerrai, A (1999) Domagata, J., see Mycielski, A 197 (1999) Cherkaoui, K . see Zumbiehl, A (1999) Dumont, H., | Auvray, J. Dazord. \ Chernikoy, V., see Ryzhikov, V 7 (1999) Souliere, Y Monteil, J. Bouix and A Chibani, L., see Fougéres, P 197 (1999) Ougazzaden, Surface morphology of In- Chou, W.C., see Bryja, L 7 (1999) GaAs and InP materials grown with Choubey, A., see Murthy, R.V.A 197 (1999) trimethylarsenic and arsine on vicinal InP Chun, C.-H., see Lee, Y.-S 7 (1999) substrates 197 (1999) Chun, C.-H., see Lee, Y.-S. (1999) Durose, K., P.R. Edwards and D.P. Halliday, Ciach, R.. M.V. Demich, P.M. Gorley, Z. Kuz- Materials aspects of CdTe/CdS solar cells 197 (1999) nicki, V.P. Makhniy, I.V. Malimon and Z Dutta, P.S and A.G Ostrogorsky, Strong Swiatek, Photo and X-ray sensitive hetero- band gap narrowing in quasi-binary structures based on cadmium telluride (1999) (GaSb), — (InAs), crystals grown from Cibert, J., see Siviniant, J. 7 (1999) melt 197 (1999) Cingolani, R., see Passaseo, A. 7 (1999) Dutta, P.S. and A.G. Ostrogorsky, Segrega- Ciorga, M., see Bryja, L. (1999) tion of tellurium in GaSb single crystals Cloots, R., see Vandewalle, N (1999) and associated diffusion coefficient in the ‘onibeer, G.J., see Lane, D.W. (1999) solute layer 197 (1999) Constantino, M.E., see Salazar-Hernandez, B 7 (1999) Coquillat, D., see Siviniant, J 7 (1999) Edwards, P.R., see Durose, K 197 (1999) Cur, FZ. see Luo; ZS. 7 (1999) Endoh, Y., see Kaneko, N 197 (1999) Cui, L., see Zhu, H. 7 (1999) Cui, W.., see Guan, Q 7 (1999) 1012 Faqir, H., see Mansori, M. 197 (1999) Cuisinier, F.J.G., see Ngankam. P.A. 7 (1999) 927 Farid, B., see Briat, B 197 (1999) Faschinger, W., Doping and contacting of Dabkowska, H.A.. see Dabkowski, A. 197 (1999) 879 wide gap II-VI compounds 197 (1999) Dabkowski, A. H.A. Dabkowska, J. Fediv, V.I., see Savchuk, A.I 197 (1999) Greedan, G. Adachi, Y. Kobayashi, S Feichouk, P. . see Vackova, S 197 (1999) Tamura, M. Hiaraiwa and N Imanaka, Feltgen, T . see Fiederle, M 197 (1999) luthor index Feng, J.. W.D. Huang, X. Lin, Q.Y. Pan, T. Li Gamarnik, M.Y., Crystallization y and Y.H. Zhou, Primary cellular/dendritic lecular spacing selection of Al-Zn alloy during unidirectional solidification Garcia, J.A smon, V. Mun 07 7 ina Feng, S., see Zhu, H Triboulet, Effect of plastic deformation on Ferriol, M., Y. Terada, T. Fukuda and G photolumine bulk mo! Boulon, Laser heated pedestal growth and crystals characterization of zinc lithium niobate Gartsman, K., see Lyahovitskay crystals 97 (1999) Gavriloy, S., see Belogorok Feychuk, P., see Panchuk, O 197 (1999) Gelabert, M.C., R.A Fiederle, M., T. Feltgen, J.M einhardt, M. Ro- Phase stability. solubility galla and K.W. Benz, State of the art of f PbTiO (Cd.Zn) Te as gamma detector ] 999) see MoBner. R Flueraru, C., see Verardi, P 1999) see Verardi, P Fochuk, P., O. Korovyanko and O. Panchuk. High-temperature point defect equilibrit in CdTe modelling 1999) Fochuk, P., see Panchuk, O 1999) Fougeres, P., L. Chibani, M. Hageali, J.M Koebel, G. Hennard, A. Zumbiehl, P Siffert and M. Benkaddour, Zinc segre tion in HPB grown nuclear detector g Greedan Cd, _,£n,Te (1999) Greenberg. Fougeres., P., see Zerrai, A 1999) plications of Fougeres, P., see Zumbiehl, A (1999) Guan, Q X. Hu Fougeres, P., see Zumbiehl, A (1999) Cui and Y Foxon, C.T., see Orton, J.W 7 (1999) Foxon, C.T., see Cheng, T.S (1999) Franc, J.. E. Belas, A.L. Toth, H. Sitter, P Hlidek, P. Moravec and P. Hoschl, Diffu- Guers yv, V.. see Murthy, sion length of minority carriers in Gui, X., see Rak, M (CdZn) Te and (HgCd) Te single crystals Guo, J.Q.. T.J measured by EBIC method 7 (1999) Solid-liquid interface in Frasunyak, V.M., see Savchuk, A.I 7 (1999) of a decagonal Al-72 Co-16 Freiberg, M.. see Schonherr, I 7 (1999) crystal Frey, T., see Lima, A.P 7 (1999) Gustafsson, A.. see Seifert, W Frolow, F., see Lyahovitskaya, V 7 (1999) Fujisawa, Y., see Kubota, N 7 (1999) Hage-Ali, M., see Zerrai, A Fukuda, T., see Takeda, H 7 (1999) Hage-Ali, M., see Zumbiehl, A Fukuda, T., see Ferriol, M 7 (1999) Hage-Ali, M., see Zumbiehl, A Fukuda, T., see Shimamura, K 7 (1999) Hageali, M.. see Fou Furukawa, Y.. K. Kitamura, E. Suzuki and K Hageman, P.R., see de Theije, Niwa, Stoichiometric LiTaO, single crys- Halliday, D.P., see Durose, K tal growth by double crucible Czochralski Hao, M:S., see Wang, J method using automatic powder supply Hawksworth, A.. W.M. Rainfo rth and H system 7 (1999) Jones, Solidification microstructure selec- tion in the Al-rich Al-La A] Ce and Gal’chinetskii, L.P., see Atroshchenko, I \ 7 (1999) Al-Nd systems 1999) Gal’chinetskii, L L.P., see Atroshchenko, L.V 7 (1999) Hayakawa, Y., see Aswal, D.K (1999) Gal’chinetskil, L.P., see Ryzhikov, V 7 (1999) Hearne, S., see Lane, D.W (1999) Galenko, P.K. and D.A. Danilov, Model for Heime, K., see Liu, Q 7 (1999) free dendritic alloy growth under inter- Hennard, G., see Fougeres, P 7 (1999) facial and bulk phase nonequilibrium con- Henry, A., see Syvajarvi, M 7 (1999) ditions 197 (1999) Heuken, M., see Liu, Q 7 (1999) Galkin, S.N., see Atroshchenko, L.V 197 (1999) Hiaraiwa, M., see Dabkowski, A 7 (1999) Galkin, S.N., see Atroshchenko, L.V 197 (1999) Hidaka, Y., see Kaneko, N 7 (1999) S18 Galkin, S.N., see Ryzhikov, V 197 (1999) Hiralal, 1.D.K., see Sweegers, € 7 (1999) a~ ? 1 4 1018 {uthor index Hirano, T., see Guo, J.Q 197 (1999) 963 Katsuragi, T., see Kaneko, N. 197 (1999) Hirata, A., see Arafune, K. 197 (1999) 811 Kavokin, A.V., see Siviniant, J. 197 (1999) Hlidek, P., see Franc, J. 197 (1999) 593 Kawabe, M., see Jang, K.-Y. 197 (1999) Hooper, S.E., see Orton, J.W 197 (1999) Kawanowa, H. and Y. Gotoh, Crystal growth Hoschl, P., see Franc, J. 197 (1999) of WSi, on a W(1 10) surface 197 (1999) Hoshizaki, H., see Ueno, Y 197 (1999) Keiper, D., R. Westphalen and G. Landgren, Hosoya, S., see Kaneko, N. 197 (1999) Comparison of carbon doping of InGaAs Hu, X., see Guan, Q 197 (1999) and GaAs by CBr, using hydrogen or ni- Huan, Q., see Cai, L.C 197 (1999) trogen as carrier gas in LP-MOVPE 197 (1999) 197 Huang, W.D., see Feng, J 197 (1999) Khanin, E., see Levy, M. (1999) Hughes, O.H., see Cheng, T.S 197 (1999) Kharachenko, L., see Murthy, R.V.A. 197 (1999) Humphreys, C.J., see Walther, 1 197 (1999) Kikuma, I., see Udono, H. 197 (1999) Hwang, Y.G., see Kim, K.C 7 (1999) Kim, J.H., see Kim, T.W. 197 (1999) Kim, K.C., K.S. Nahm, E.-K. Suh and Y.G Iga, K., see Miyamoto, T. (1999) Hwang, The surface modification of Ilaschouk, M., see Vackova, S (1999) Si(111) substrates with SiN, for the Ilashchuk, M., see Panchuk, O (1999) growth of high quality B-SiC epilayers 197 (1999) Imanaka, N., see Dabkowski, A (1999) Kim, T.W., J.-H. Kim, H.L. Park and J.Y. Lee, Irvine, S.J.C., A. Stafford and M.U. Ahmed, Structural property and interband transi- Substrate/layer relationships in II-VIs 7 (1999) tion studies on Cd,Zn, -,Te/ZnTe coupled Ishikawa, H., see Nishijima, Y (1999) step and rectangular quantum wells 197 (1999) 799 Ishikawa, Y., see Wang, J (1999) Kitamura, K., see Kaneko, N 197 (1999) 818 Ivanov, I.G., see Syvajarvi, M 197 (1999) Kitamura, K., see Furukawa, Y 197 (1999) S89 Kobayashi, Y., see Dabkowski, A 197 (1999) 879 Jacob, K.I., see Moller, J. 197 (1999) Koebel, J.M., see Fougeéres, P 197 (1999) 641 Jager-Waldau, A., see Birkholz, M 197 (1999) Koebel, J.M., see Zerrai, A. 197 (1999) 646 James, L., see Zaitseva, N 197 (1999) Koebel, J.M., see Zumbiehl, A 7 (1999) 650 Jang, K.-Y., Y. Okada and M. Kawabe, Effect Koebel, J.M., see Zumbiehl, A (1999) 670 of hydrogen in AlGaAs grown by atomic Kohler, U., see Lima, A.P. (1999) 31 hydrogen-assisted molecular beam epitaxy 197 (1999) Kong, M.-Y., see Zhang, J.-P. 197 (1999) 368 Janzén, E., see Syvajarvi, M. 197 (1999) Korakakis, D., see Cheng, T.S. 197 (1999) 12 Janzen, E., see Syvajarvi, M. (1999) Korbutjak, N.D., see Korbutyak, D.V. (1999) 659 Jayavel, R., see Ushasree, P.M 7 (1999) Korbutyak, D.V.. S.G. Krylyuk, P.M. Jeffs, N.J., see Cheng, T.S. 7 (1999) Tkachuk, V.I. Tkachuk, N.D. Korbutjak Jiang Rihong, see Yang Shangfeng >7 (1999) and M.D. Raransky, Growth and charac- Johansson, J., see Seifert, W. 197 (1999) terization of high-resistivity CdTe<Cl (1999) Jones, H., see Hawksworth, A 197 (1999) Korchnoi, V., see Lisiansky, M 197 (1999) Korostelin, Yu.V., V.I. Kozlovsky, AS. Ka, O., see Thiandoume, C. 197 (1999) Nasibov and P.V. Shapkin, Vapour Kagawa, H., see Kanie, H 197 (1999) growth and doping of ZnSe single crystals 197 (1999) Kageyama, T., see Miyamoto, T 197 (1999) Korovyanko, O., see Fochuk, P. 197 (1999) Kakanakova-Georgieva, A., see Syvajarvi, M 197 (1999) Koukitu, A., T. Taki, N. Takahashi and H Kam, C.H., see Shi, W. 197 (1999) Seki, Thermodynamic study on the role of Kaneko, N., S. Ueno, J. Yano, T. Katsuragi hydrogen during the MOVPE growth of and K. Sato, Impurity effects on crystalli- group III nitrides 197 (1999) zation rates of n-hexadecane in oil-in- Kowalczyk, L., see Mycieiski, A 197 (1999) water emulsions 197 (1999) Koyama, F., see Miyamoto, T 197 (1999) Kaneko, N., Y. Hidaka, S. Hosoya, K Kozlovsky, V.1., see Korostelin, Yu.V 197 (1999) Yamada, Y. Endoh, S. Takekawa and K. Krapukhin, V.V., see Senchenkov, A.S. 197 (1999) Kitamura, Optimum crucible material for Krishnamurthy, D., see Kumaragurubaran, S 197 (1999) growth of Pr,_,.Ce,CuQOy, crystal 197 (1999) Krylyuk, S.G., see Korbutyak, D.V 197 (1999) Kanie, H., H. Kagawa and T. Kato, Crystal Kubalek, E., see Liu, Q 197 (1999) growth of SrS from Te solution and its Kubota, N., Y. Fujisawa, M. Yokota and J.W. optical properties 197 (1999) Mullin, Pseudo-solubilities of potassium Kaplan, L., see Lyahovitskaya, V 197 (1999) sulfate in water in the presence of crystal- Kaplan, L., see Lyahovitskaya, V 197 (1999) growth and -dissolutionsuppressoriron(III) Kato, T., see Kanie, H. 197 (1999) impurities 197 (1999) {uthor index Kudriavtsev, Yu.A., see Orton, J.W 197 (1999) and G. Vanderschaeve, Electron- Kumagawa, M., see Aswal, D.K 197 (1999) irradiation enhanced dislocation glide Kumaragurubaran, S., D. Krishnamurthy. C II-VI semiconductors Subramanian and P. Ramasamy, Invest- Levy, M., N. Amir, E.K hanin, Y. Nemirovsky igations on the growth of Bi,TeO; and and R Beserman Characterization of TeO, crystals 197 (1999) CdTe substrates and MOCVD Kuznicki, Z., see Ciach, R 197 (1999) Cd, _,Zn,Te epilayers 1999) Li, H.X., see Wu, J 1999) Lakeenkov, V.M., V.B. Ufimtsev, N.] Li, J.-M., see Zhang, J.-P Shmatov and Yu.F. Schelkin, Numeric Li, T., see Feng. J simulation of vertical Bridgman growth of Li, W.Z., see Luo, Z.S Cd,_,Zn,Te melts 197 (1999) i Zhengdong, see Yang Shangfeng Lakin, E., see Mainzer, N 197 (1999) ima, A.P., T. Frey, U. Kohler, C. Wang, D.J Lakner, H., see Liu, Q | 97 ( 1999) As, B. Schottker, K. Lischka and D Lal, K., see Murthy, R.V.A 197 (1999) Schikora, Surface irregularities of MBI Lan, C.W., Effects of ampoule rotation on grown cubic GaN layers 1999) flows and dopant segregation in vertical in, C., see Zeng, J 1999) Bridgman crystal growth 7 (1999) in, L.-Y., see Zhang, J.-P 7 (1999) Landgren, G., see Keiper, D 7 (1999) in, X., see Feng, J 1999) Lane, D.W., G.J. 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Chun, Effects of a cusp Grebennik, High temperature electrical magnetic field on the oscillatory convec- conductivity in the Cu solubility limit tion coupled with crucible rotation in range in ZnS: Cu (1999) Czochralski crystal growth 197 (1999) ott, K. and I Turn, A method for the calcu- Leem, J.-Y., see Lee, C.-R 197 (1999) lation of defect equilibrium 711999) Leem, J.-Y.,C.-R. Lee, S.K. Noh and J.-S. Son, ubomirski, I., see Cahen, D (1999) RHEED oscillation studies of pseudomor- ui, P.Y., see Yoon, S.F (1999) phic InGaAs strained layers on GaAs sub- uo, Z.S., F.Z. Cui and W.Z. Li, Abnormal strate 197 (1999) refinement of grains in calcium phosphate Leem, K.-Y., see Lee, C.-R 197 (1999) films during a low temperature crystalliza- Lemasson, P., A. Riviere,G . Didier, A. Trom- tion 197 (1999) son-Carli and R. 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