JOURNAL OF CRYSTAL GROWTH Journal of Crystal Growth 191 (1998) 911-919 Author index Abe, K., see Nakanishi, H. 191 (1998) 711 Bauhuis, G.J., P.R. Hageman and P.K. Abramof, E., see Rappl, P.H.O. 191 (1998) 466 Larsen, Heavily doped p-type Al- GalnP grown by metalorganic chem- Abrutis, A., J.P. Senateur, F. Weiss, V. Bi- ical vapor deposition 191 (1998) 313 gelyte, A. Teiserskis, V. Kubilius, V. Galindo and S. Balevicius, High qual- Bayer, M., see HOfling, E. 191 (1998) 607 ity YBa,Cu,O, films grown on LaAl- Beji, L., see Rebey, A. 191 (1998) 734 O; by single source pulsed Belenko, S.V., see Kurlov, V.N. 191 (1998) 520 metalorganic chemical vapor depos- Belenko, S.V., see Kurlov, V.N. 191 (1998) 779 ition 191 (1998) 79 Bennema, P., see Bégels, G. 191 (1998) 446 Aiga, M., see Takemi, M. 191 (1998) 18 Bennema, P., see Grimbergen, R.F.P. 191 (1998) 846 Alkemper, J., S. Sous, C. Stécker and L. Bennema, P., see van Hoof, P.J.C.M. 191 (1998) 861 Ratke, Directional solidification in an Bennett, B.R., see Twigg, M.E. 191 (1998) 651 aerogel furnace with high resolution Benz, K.W., see Croll, A. 191 (1998) 365 optical temperature measurements 191 (1998) 252 Bermudez, V., F. Caccavale, C. Sada, F. An, H.G., see Lee, H. 191 (1998) 59 Segato and E. Dieguez, Etching effect Angermeier, D., R. Monna, A. Slaoui and on periodic domain structures of lith- J.C. Muller, Analysis of thin film poly- ium niobate crystals 191 (1998) 589 silicon on graphite substrates depos- Bigelyte, V., see Abrutis, A. 191 (1998) 79 ited in a thermal CVD system 191 (1998) 386 Bischoff, J.L., see Dentel, D. 191 (1998) 697 Anzai, H., S. Maki, S. Takasaki, S. Tanaka, Boettinger, W.J., see Coriell, S.R. 191 (1998) 573 S. Nakatsuji, J.-i. Yamada, K. Nozaki, Bogels, G., see van den Berg, E.P.G. 191 (1998) 169 A. Negishi and M. Harusawa, Effect of Boégels, G., H. Meekes, P. Bennema and D. electrode-materials for electrocrystal- Bollen, The role of {1 0 0} side faces for lization of organic charge-transfer complex (TMTSF),ClO, 191 (1998) 148 lateral growth of tabular silver bro- Arkenbout, G.J., see van den Berg, E.P.G. 191 (1998) 169 mide crystals 191 (1998) 446 Asaba, S., see Nakanishi, H. 191 (1998) 711 Bollen, D., see Bégels, G. 191 (1998) 446 Asano, T., see Saito, T. 191 (1998) 723 Bondarenko, E.A., see Kovalenko, S.I. 191 (1998) 553 Boschetti, C., see Rappl, P.H.O. 191 (1998) 466 Baars, T., see HOfling, E. 191 (1998) 607 Braski, D.N., see Gao, Y. 191 (1998) 439 Babu, S.M., see Senguttuvan, N. 191 (1998) 130 Bray, K.L., see Koporulina, E.V. 191 (1998) 767 Bacchin, G. and T. Nishinaga, Dependence Brecht, E., C. Treholt, R. Schneider and G. of the degree of selectivity on the Al Linker, Transmission electron micros- content during the selective area copy study of the interface of growth of AlGaAs on GaAs(00 1) by Bi,Sr,CaCu,O¢,, thin films on (1 1 0) PSE/MBE 191 (1998) 599 oriented SrTiO, substrates 191 (1998) 421 Baik, H.K., see Choi, D.J. 191 (1998) 718 Burger, A., see Chattopadhyay, K. 191 (1998) 377 Balevicius, S., see Abrutis, A. 191 (1998) 79 Buschmann, V., M. Rodewald, H. Fuess, Bancel, P.A., V.B. Cajipe, F. Rodier and J. G. Van Tendeloo and C. Schiffer, Het- Witz, Laser seeding for biomolecular ero-epitaxial growth of CoSi, thin crystallization 191 (1998) 537 films on Si(1 00): template effects and Bandeira, I.N., see Rappl, P.H.O. 191 (1998) 466 epitaxial orientations 191 (1998) 430 Barilo, S.N., see Leonyuk, N.L. 191 (1998) 135 Bychkov, G.L., see Leonyuk, N.I. 191 (1998) 135 0022-0248/98/$19.00 © 1998 Elsevier Science B.V. All rights reserved. PIT $0022-0248(98)00525-9 912 Author index Caccavale, F., see Bermudez, V. 191 (1998) 589 floating-solution-zone growth of GaSb Cajipe, V.B., see Bancel, P.A. 191 (1998) 537 under microgravity 191 (1998) Canselier, J.P., see Lin, C.H. 191 (1998) 791 Canselier, J.P., see Lin, C.H. 191 (1998) 803 Danilewsky, A.N., see Croll, A. 191 (1998) Davis, A.M.J., see Hadji, L. 191 (1998) Carlsson, N., T. Junno, L. Montelius, M.- De Carvalho, M.M.G., see Soares, L.S.M. 191 (1998) E. Pistol, L. Samuelson and W. Seifert, Growth of self-assembled InAs and Deng Peizhen, see Zhou Gueging 191 (1998) InAs,P,_, dots on InP by metalor- Dennis, M., see Yeckel, A. 191 (1998) ganic vapour phase epitaxy 191 (1998) 347 Dentel, D., J.L. Bischoff, L. Kubler, J. Wer- Chai, B.H.T., see Morris, R.C. 191 (1998) 108 ckmann and M. Romeo, Surface smoothing induced by epitaxial Si cap- Champness, C.H., see Shukri, Z.A. 191 (1998) 97 ping of rough and strained Ge or Chattopadhyay, K., S. Feth, H. Chen, A. Si,_,Ge, morphologies: A RHEED Burger and C.-H. Su, Characterization and TEM study 191 (1998) 697 of semi-insulating CdTe crystals grown Derby, J.J., see Yeckel, A. 191 (1998) 206 by horizontal seeded physical vapor DeSisto, W.J. and B.J. Rappoli, Ultraviolet transport 191 (1998) 377 absorption sensors for precursor deliv- Chaudhuri, J., see Gao, Y. 191 (1998) 439 ery rate control for metalorganic chem- Cheema, S.N., see Gao, Y. 191 (1998) 439 ical vapor deposition of multiple Chen, C.-M., L.T. Zhang and W.C. Zhou, component oxide thin films 191 (1998) 290 Characterization of LaB,—ZrB, eutec- Diéguez, E., see Bermudez, V. 191 (1998) 589 tic composite grown by the floating Domagala, J., see Szczerbakow, A. 191 (1998) 673 zone method 191 (1998) 873 Domopoulou, A., A. Michaelides, S. Chen, H., see Chattopadhyay, K. 191 (1998) 377 Skoulika and D. Kovala-Demertzi, Chen, N., see Lin, L. 191 (1998) 586 Crystallization of an unstable molecu- Chen Xingda, see Zhou Guoging 191 (1998) 517 lar compound using a_ tailor-made Cheng, L., Z. Zhang, G. Zhang and Z. additive 191 (1998) 166 Yang, Microstructures of GaN films Dong Jianrong, see Zhou Hongwei 191 (1998) 361 grown by low pressure metal-organic Drevet, B., see Eustathopoulos, N. 191 (1998) 268 vapor phase epitaxy on (01 1 2) sap- Du, J., see Li, Y.X. 191 (1998) 282 phire substrates 191 (1998) 641 Duan, L.H., see Xu, D.P. 191 (1998) Cheong, S.-W., see Kloc, Ch. 191 (1998) 294 Durose, K., see Szczerbakow, A. 191 (1998) 673 Choi, D.J., Y.H. Kim, D.W. Han, H.K. Dutta, P.S. and A.G. Ostrogorsky, Nearly Baik and S.I. Kim, Formation of poly- diffusion controlled segregation of tel- crystalline silicon films on glass sub- lurium in GaSb 191 (1998) strates at low-temperatures by a direct negative Si ion beam deposition system 191 (1998) 718 Edgar, J.H., see Gao, Y. 191 (1998) Choi, D.Y. and S.J. Chung, Annealing be- El Jani, B., see Rebey, A. 191 (1998) haviors of lattice misfit in YIG and Elliott, R., see Liu, J. 191 (1998) La-doped YIG films grown on GGG Emerson, D.T., see Wankerl, A. 191 (1998) substrates by LPE method 191 (1998) 754 Eremenko, V.V., see Kovalenko, S.I. 191 (1998) Christopher, G.K., A.G. Phipps and R.J. Eustathopoulos, N., B. Drevet and E. Gray, Temperature-dependent solubil- Ricci, Temperature coefficient of sur- ity of selected proteins 191 (1998) face tension for pure liquid metals 191 (1998) Chua, S.J., see Li, G. 191 (1998) Chung, S.J., see Choi, D.Y. 191 (1998) Fawell, P.D., see Rossiter, D.S. 191 (1998) Closs, H., see Rappl, P.H.O. 191 (1998) Felicelli, $.D., J.C. Heinrich and D.R. Cook, M.J., see Wankerl, A. 191 (1998) Poirier, Three-dimensional simulations Coriell, S.R.. G.B. McFadden, R.F. of freckles in binary alloys 191 (1998) Sekerka and W.J. Boettinger, Multiple Ferreira, $.O., see Rappl, P.H.O. 191 (1998) similarity solutions for solidification Feth, S., see Chattopadhyay, K. 191 (1998) and melting 191 (1998) 573 Forchel, A., see HOfling, E. 191 (1998) Cotta, M.A., see Soares, L.S.M. 191 (1998) Fuess, H., see Buschmann, V. 191 (1998) Croll, A., Th. Kaiser, M. Schweizer, A.N. Fukuda, T., see Kaigawa, K. 191 (1998) Danilewsky, S. Lauer, A. Tegetmeier Fukuda, T., see Kawaguchi, T. 191 (1998) and K.W. Benz, Floating-zone and Fukuda, T., see Sato, J. 191 (1998) Author index Gabas, N., see Lin, C.H. 191 (1998) 791 Hamadeh, H., see Taudt, W. 191 (1998) 663 Gabas, N., see Lin, C.H. 191 (1998) 803 Han, D.W., see Choi, D.J. 191 (1998) 718 Gajbhiye, N.S., see Panda, R.N. 191 (1998) 92 Han, T.P.J., see Ryu, G. 191 (1998) 492 Galindo, V., see Abrutis, A. 191 (1998) 79 Hansen, D., see Koporulina, E.V. 191 (1998) 767 Gallagher, H.G., see Ryu, G. 191 (1998) 492 Hardt, A., see Taudt, W. 191 (1998) 663 Gan Fuxi, see Zhou Guoging 191 (1998) 517 Harusawa, M., see Anzai, H. 191 (1998) 148 Gao, Y., J.H. Edgar, J. Chaudhuri, S.N. Hayashi, Y., see Saito, T. 191 (1998) 723 Cheema, M.V. Sidorov and D.N. Heime, K., see Xu, X.G. 191 (1998) 341 Braski, Low-temperature chemical- Heinrich, J.C., see Felicelli, $.D. 191 (1998) 879 vapor deposition of 3C-—SiC films on Heuken, M., see Xu, X.G. 191 (1998) 341 Si(1 0 0) using SiH4—-C,H,-HCI-H, 191 (1998) 439 Heuken, M., see Taudt, W. 191 (1998) 663 Garcia, J.A., A. Remon, V. Mufioz and R. Triboulet, Photoluminescence study of Hicks, R.F., see Kappers, M.J. 191 (1998) 332 radiative transitions in ZnTe bulk crys- Hiei, F., see Tsukamoto, H. 191 (1998) 679 tals 191 (1998) 685 Hirano, T., see Sato, T.J. 191 (1998) 545 Gardner, J.S., B.D. Gaulin and D.McK. Hirsch, L.S., see Ziemer, K.S. 191 (1998) 594 Paul, Single crystal growth by the HOfling, E., J.P. Reithmaier, T. Baars, M. floating-zone method of a geomet- Bayer and A. Forchel, Optical and rically frustrated pyrochlore antifer- structural properties of GalnAs/InP romagnet, Tb,Ti,O, 191 (1998) 740 single quantum wells grown by solid- Gaulin, B.D., see Gardner, J.S. 191 (1998) 740 source MBE with a GaP decomposi- Gebhardt, W., see Hahn, B. 191 (1998) 65 tion source 191 (1998) 607 Gibart, P., see Rebey, A. 191 (1998) 734 Hong, K.J., see Lee, H. 191 (1998) 59 Giesen, Ch., see Xu, X.G. 191 (1998) 341 Hong, S.K., B.J. Kim, H.S. Park, Y. Park, Gower, L.A. and D.A. Tirrell, Calcium car- S.Y. Yoon and T.I. Kim, Evaluation bonate films and helices grown in solu- of nanopipes in MOCVD grown tions of poly(aspartate) 191 (1998) 153 (000 1)GaN/Al,O, by wet chemical Gray, R.J., see Christopher, G.K. 191 (1998) 820 etching 191 (1998) Griebl, E., see Hahn, B. 191 (1998) 65 Hoogesteger, F.J., see ten Grotenhuis, E. 191 (1998) Grimbergen, R.F.P., see Vogels, L.J.P. 191 (1998) 563 Hovel, R., see Xu, X.G. 191 (1998) Grimbergen, R.F.P., P.J.C.M. van Hoof, Hozawa, M., see Hahn, S.-H. 191 (1998) H. Meekes and P. Bennema, Morpho- Huang, J.F., see Jin, P. 191 (1998) logy of orthorhombic n-paraffin crys- Huang, J.Y., see Wu, H.Z. 191 (1998) tals: the influence of multiple connected Hunt, J.D., see Marasli, N. 191 (1998) nets 191 (1998) 846 Grimbergen, R.F.P., see van Hoof, P.J.C.M. 191 (1998) 861 Ikeda, M., see Tsukamoto, H. 191 (1998) Gurin, V.S., Nucleation and growth of PbS llievski, D., see Rossiter, D.S. 191 (1998) nanocrystals and simulation of X-ray Imaeda, M., see Kaigawa, K. 191 (1998) diffraction patterns 191 (1998) 161 Imaeda, M., see Kawaguchi, T. 191 (1998) Imaishi, N., see Hahn, S.-H. 191 (1998) Hadji, L. and A.M.J. Davis, The influence Ito-Landers, K.M., see Soares, L.S.M. 191 (1998) of insoluble spherical particles on the stability of a planar solidifying inter- Ivanov, V.Yu., see Szczerbakow, A. 191 (1998) face 191 (1998) 889 Hageman, P.R., see Bauhuis, G.J. 191 (1998) 313 Jagadish, C., see Li, G. 191 (1998) Hahn, B., E. Pschorr-Schoberer, E. Griebl, Jenneskens, L.W., see ten Grotenhuis, E. 191 (1998) M. Kastner and W. Gebhardt, Meta- Jeong, T.S., see Lee, H. 191 (1998) lorganic chemical vapor deposition of ZnSe films on glass and GaAs(1 1 1) Jiang, H., see Ning, Y. 191 (1998) substrates 191 (1998) 65 Jiang, X.B., see Wu, H.Z. 191 (1998) Hahn, S.-H., T. Tsukada, M. Hozawa, S. Jiang Xue-yin, Jin Yang, Zhang Zhi-lin Maruyama, N. Imaishi and_ “5S. and Xu Shao-hong, Mn-doped nano- Kitagawa, Global analysis of heat meter-size ZnS clusters in chitosan film transfer in Si CZ furnace with specular matrix prepared by ion-coordination and diffuse surfaces 191 (1998) 413 reaction 191 (1998) 692 914 Author index Jin, P., M. Tazawa, J.F. Huang and S. Koporulina, E.V., N.I. Leonyuk, D. Han- Tanemura, Growth of samarium sen and K.L. Bray, Flux growth and monosulfide thin films by co-sputtering luminescence of Ho: YAI,(BO;3), and deposition 191 (1998) 285 PrAl,(BO3),4 crystals 191 (1998) 767 Jin, W., Z. Pan and Z. Liu, Effect of buoy- KOrfer, H., see Taudt, W. 191 (1998) 663 ancy-driven convection upon crystal Koutsoukos, P.G., see Spanos, N. 191 (1998) 783 growth of KNbO, in the melt 191 (1998) 760 K ovala-Demertzi, D., see Domopoulou, A. 191 (1998) 166 Jin, Y., see Ning, Y. 191 (1998) 39 Kovalenko, S.I., D.D. Solnyshkin, E.A. Jin Yan, see Jiang Xue-yin 191 (1998) 692 Bondarenko, E.T. Verkhovtseva and Ju, Y.L., see Li, Y.X. 191 (1998) 282 V.V. Eremenko, Electron diffraction Junno, T., see Carlsson, N. 191 (1998) 347 study on the rise of crystal phase in rare-gas and nitrogen clusters 191 (1998) 553 Kaigawa, K., T. Kawaguchi, M. Imaeda, Kubilius, V., see Abrutis, A. 191 (1998) 79 H. Sakai and T. Fukuda, Crystal struc- Kubler, L., see Dentel, D. 191 (1998) 697 ture of LPE-grown LiNb,-,Ta,O; Kubota, E.. M. Shimokozono and Y. epitaxial films 191 (1998) 119 Katoh, LPE growth of yttrium— Kaiser, Th., see Croll, A. 191 (1998) 365 lutetium, indium—gallium garnet films Kameta, M., see Saito, T. 191 (1998) 723 for optical waveguide formation on Kamiya, N., see Sugiyama, N. 191 (1998) 84 a GGG substrate 191 (1998) 501 Kappers, M.J., M.L. Warddrip and R.F. Kurlov, V.N., S.N. Rossolenko and S.V. Hicks, Ligand exchange reactions in Belenko, Growth of sapphire core- InGaAs metalorganic vapor-phase epi- doped fibers 191 (1998) 520 taxy 191 (1998) 332 Kurlov, V.N. and S.V. Belenko, Growth of Kastner, M., see Hahn, B. 191 (1998) 65 sapphire shaped crystals with continu- Katoh, Y., see Kubota, E. 191 (1998) 501 ously modulated dopants 191 (1998) 779 Kawaguchi, T., see Kaigawa, K. 191 (1998) 119 Kurnevich, L.A., see Leonyuk, N.I. 191 (1998) 135 Kawaguchi, T., K. Mizuuchi, K. Yama- Kusakabe, K., see Saito, T. 191 (1998) 723 moto, T. Yoshino, M. Imaeda and Kwon, M.S. and J.Y. Lee, Formation of T. Fukuda, Fabrication of thin-film CuPt-type ordered (Cd, Zn)Te at waveguide QPM-SHG devices by do- CdTe/ZnTe interface 191 (1998) 51 main-inverted liquid-phase epitaxy 191 (1998) 125 Kawahara, A., see Saito, T. 191 (1998) 723 Lakner, H., see Taudt, W. 191 (1998) 663 Kawasaki, K., see Sawada, T. 191 (1998) 225 LaPierre, R.R., B.J. Robinson and D.A. Kennedy, R.J., see Stampe, P.A. 191 (1998) 472 Thompson, Growth mechanisms of Kennedy, R.J., see Stampe, P.A. 191 (1998) 478 III-V compounds by atomic hydro- Kim, B.J., see Hong, S.K. 191 (1998) 275 gen-assisted epitaxy 191 (1998) 319 Kim, J.Y., see Lee, H. 191 (1998) 59 Larsen, P.K., see Bauhuis, G.J. 191 (1998) 313 Kim, K., see Lee, H.J. 191 (1998) 621 Larson Jr., D.J., see Zheng, L.L. 191 (1998) 243 Kim, S.1., see Choi, D.J. 191 (1998) 718 Lauer, S., see Croll, A. 191 (1998) 365 Kim, T.I., see Hong, S.K. 191 (1998) 275 Laxmanan, V., The limiting behavior of Kim, T.S., see Lee, H. 191 (1998) 59 the gradient function for an isolated Kim, Y.H., see Choi, D.J. 191 (1998) 718 paraboloid growing in a positive tem- Kimura, S., see Yoshimura, J. 191 (1998) 483 perature gradient 191 (1998) 298 Kitagawa, S., see Hahn, S.-H. 191 (1998) 413 Lee, C.-R., see Lee, H.J. 191 (1998) 621 Kloc, Ch., S.-W. Cheong and P. Matl, Lee, H., T.S. Kim, T.S. Jeong, H.G. An, J.Y. Floating-zone crystal growth of perov- Kim, C.J. Youn, P.Y. Yu, K.J. Hong, skite manganites with colossal mag- H.J. Lee and Y.J. Shin, Growth of zinc netoresistance 191 (1998) 294 selenide single crystal by the modified Kokh, A., Crystal growth through forced Piper and Polich sublimation method 191 (1998) 59 stirring of melt or solution in Czoch- Lee, H.J., see Lee, H. 191 (1998) 59 ralski configuration 191 (1998) 774 Lee, H.J., H. Ryu, C.-R. Lee and K. Kim, Kong, M., see Li, X. 191 (1998) 31 Polytypes in GaN films grown by Kong, M., see Li, X. 191 (1998) 34 metalorganic chemical vapor depos- Kong, M., see Wang, H. 191 (1998) 627 ition on (000 1) sapphire substrate 191 (1998) Kong Meiying, see Zhou Hongwei 191 (1998) 361 Lee, J.Y., see Kwon, M.S. 191 (1998) Koporulina, E.V., see Leonyuk, N.I. 191 (1998) 135 Lee, R.T., see Liu, Z. 191 (1998) Author index Leonyuk, N.I., E.V. Koporulina, S.N. Maki, S., see Anzai, H. 191 (1998) 148 Barilo, L.A. Kurnevich and G.L. By- Marasli, N. and J.D. Hunt, The use of chkov, Crystal growth of solid solu- measured values of surface energies to tions based on the YAI,;(BO3;)4,, test heterogeneous nucleation theory 191 (1998) 558 NdAI,(BO;), and GdAl,(BO;3)4 bor- Marone, P.A., P. Thiyagarajan, A.M. ates 191 (1998) 135 Wagner and D.M. Tiede, The associ- Leonyuk, N.I., see Koporulina, E.V. 191 (1998) 767 ation state of a detergent-solubilized Li, G., K.E. Prince, M. Petravic, S.J. Chua membrane protein measured during and C. Jagadish, Substrate orientation crystal nucleation and growth by effect on Zn 5-doping in GaAs grown small-angle neutron scattering 191 (1998) by metal organic vapour-phase epitaxy 191 (1998) 357 Marsman, A.W., see ten Grotenhuis, E. 191 (1998) Li, S., see Ning, Y. 191 (1998) 39 Maruyama, S., see Hahn, S.-H. 191 (1998) Li, X., D. Sun, J. Zhang and M. Kong, Matl, P., see Kloc, Ch. 191 (1998) GaN epilayers grown at high growth Matsushita, H. and T. Takizawa, Se vapor rate using gas source molecular beam pressure dependence of the phase dia- epitaxy method 191 (1998) 31 gram of the CuGa, _,In,Se, system 191 (1998) Li, X., D. Sun, J. Zhang, S. Zhu and M. McFadden, G.B., see Coriell, S.R. 191 (1998) Kong, Properties of GaN epilayers Meekes, H., see Bogels, G. 191 (1998) with various growth conditions grown Meekes, H., see Grimbergen, R.F.P. 191 (1998) by gas source molecular beam epitaxy 191 (1998) 34 Meekes, H., see van Hoof, P.J.C.M. 191 (1998) Li, Y.X., Y.L. Ju, H.M. Wang, P.J. Niu, Mendonca, C.A.C., see Soares, L.S.M. 191 (1998) C.C. Tang, J. Du, and G.H. Wu The Michaelides, A., see Domopoulou, A. 191 (1998) effect of orientation deviation on pat- Mihashi, Y., see Takemi, M. 191 (1998) tern distortion in epitaxial buried layer Miyazawa, S. and T. Tabata, Bi,O0,—-TiO, on p-type <1 00) silicon substrate 191 (1998) 282 binary phase diagram study for TSSG Lin, C.H., N. Gabas, J.P. Canselier and G. pulling of Bi,,TiOz o single crystals 191 (1998) Pépe, Prediction of the growth mor- Mizuuchi, K., see Kawaguchi, T. 191 (1998) phology of aminoacid crystals in solu- Mo. Y., Y. Xia and W. Wu, A nucleation tion I. «-Glycine 191 (1998) 791 mechanism for diamond film deposited Lin, C.H., N. Gabas and J.P. Canselier, on alumina substrates by microwave Prediction of the growth morphology plasma CVD 191 (1998) of aminoacid crystals in solutionll. y- Mohan, P., see Senguttuvan, N. 191 (1998) Aminobutyric acid 191 (1998) 803 Monna, R., see Angermeier, D. 191 (1998) Lin, L., X. Zhong and N. Chen, Improve- Montelius, L., see Carlsson, N. 191 (1998) ment of stoichiometry in semi-insulat- Morikoshi, H., see Sato, J. 191 (1998) ing gallium arsenide grown under Morooka, S., see Saito, T. 191 (1998) microgravity 191 (1998) Linker, G., see Brecht, E. 191 (1998) 421 Morris, R.C. and B.H.T. Chai, Imperfect low-angle boundaries and fracture in Liu, J. and R. Elliott, Numerical modelling of the solidification of ductile iron 191 (1998) 261 hydrothermally grown berlinite crys- tals 191 (1998) Liu, Q., see Taudt, W. 191 (1998) Motisuke, P., see Rappl, P.H.O. 191 (1998) Liu, Z., R.T. Lee and G.B. Stringfellow, Muller, J.C., see Angermeier, D. 191 (1998) Pyrolysis of tertiarybutylamine alone and with trimethylgallium for GaN Munoz, V., see Garcia, J.A. 191 (1998) growth 191 (1998) Murakami, Y., see Yonenaga, I. 191 (1998) Liu, Z., see Jin, W. 191 (1998) 760 Myers, T.H., see Ziemer, K.S. 191 (1998) Lu, C.J., H.M. Shen and Y.N. Wang, The growth and phase transitions of epi- Nagai, M., see Tsukamoto, H. 191 (1998) taxial Pb(ZroosTio.os)O3 thin films Nakanishi, H., K. Nakazato, S. Asaba, K. prepared by sputter deposition com- Abe, S. Maeda and K. Terashima, bined with post-annealing on Temperature dependence of density of SrTiO,(1 00) 191 (1998) 113 molten germanium measured by a newly developed Archimedian tech- Maeda, H., see Saito, T. 191 (1998) 723 nique 191 (1998) 711 Maeda, S., see Nakanishi, H. 191 (1998) 711 Nakatsuji, S., see Anzai, H. 191 (1998) 148 Magno, R., see Twigg, M.E. 191 (1998) 651 Nakazato, K., see Nakanishi, H. 191 (1998) 711 Mah, K.W., see Yoon, S.F. 191 (1998) 613 Negishi, A., see Anzai, H. 191 (1998) 148 916 Author index Ning, Y., T. Zhou, B. Zhang, H. Jiang, S. A.Y. Ueta and I.N. Bandeira, Molecu- Li, G. Yuan, Y. Tian and Y. Jin, lar beam epitaxial growth of high qual- Growth and characterization of InAs- ity Pb, _,Sn,Te layers withO <x < 1 191 (1998) 466 rich GalnAsSb alloys on GaSb sub- Rappoli, B.J., see DeSisto, W.J. 191 (1998) 290 strates by MOCVD 191 (1998) 39 Ratke, L., see Alkemper, J. 191 (1998) Nishinaga, T., see Bacchin, G. 191 (1998) 599 Rebey, A., L. Beji, B. El Jani and P. Gibart, Nishiyama, Y., see Yokoyama, C. 191 (1998) 827 Optical monitoring of the growth rate Niu, P.J., see Li, Y.X. 191 (1998) 282 reduction by CCl, during metalorganic vapour-phase epitaxy deposition of Nomura, T., see Shimizu, K. 191 (1998) 178 carbon doped GaAs 191 (1998) 734 Nomura, T., see Shimizu, K. 191 (1998) 185 Reithmaier, J.P., see HOfling, E. 191 (1998) 607 Nonaka, M., see Yonenaga, I. 191 (1998) 393 Remon, A., see Garcia, J.A. 191 (1998) 685 Nozaki, K., see Anzai, H. 191 (1998) 148 Ricci, E., see Eustathopoulos, N. 191 (1998) 268 Robinson, B.J., see LaPierre, R.R. 191 (1998) 319 Oates, W.A. and H. Wenzl, Foreign atom Rodewald, M., see Buschmann, V. 191 (1998) 430 thermodynamics in liquid gallium ar- Rodier, F., see Bancel, P.A. 191 (1998) 537 senide 191 (1998) 303 Romeo, M., see Dentel, D. 191 (1998) 697 Okamoto, A., see Sugiyama, N. 191 (1998) Rose, D., see Szczerbakow, A. 191 (1998) 673 Okamoto, Y., Theoretical study on the Rossiter, D.S., P.D. Fawell, D. Ilievski and precursors of group-III nitrides 191 (1998) 405 G.M. Parkinson, Investigation of the Okumura, K., see Sugiyama, N. 191 (1998) unseeded nucleation of Gibbsite, Omeltchouk, A.R., see Szczerbakow, A. 191 (1998) 673 Al(OH);, from synthetic bayer liquors 191 (1998) 525 Ostrogorsky, A.G., see Dutta, P.S. 191 (1998) Rossolenko, S.N., see Kurlov, V.N. 191 (1998) 520 Rudolph, P., see Sato, J. 191 (1998) 746 Palosz, W., Diffusive gas losses from silica Ryu, G. and C.S. Yoon, Seeded super- glass ampoules at elevated temper- cooled melt growth and polar morpho- atures 191 (1998) logy of organic nonlinear optical Pan Liang, see Zhou Hongwei 191 (1998) crystal, meta-nitroaniline (mNA) 191 (1998) 190 Pan, Z., see Jin, W. 191 (1998) Ryu, G., C.S. Yoon, T.P.J. Han and H.G. Gallagher, Growth and characterisa- Panda, R.N. and N.S. Gajbhiye, Chemical tion of CsLiB,O;, (CLBO) crystals 191 (1998) 492 synthesis and magnetic properties of Ryu, H., see Lee, H.J. 191 (1998) 621 nanocrystalline FeEMoN, 191 (1998) Park, H.S., see Hong, S.K. 191 (1998) Sada, C., see Bermudez, V. 191 (1998) 589 Park, Y., see Hong, S.K. 191 (1998) Saito, T., M. Kameta, K. Kusakabe, S. Parkinson, G.M., see Rossiter, D.S. 191 (1998) Morooka, H. Maeda, Y. Hayashi, T. Paul, D.McK., see Gardner, J.S. 191 (1998) Asano and A. Kawahara, Morphology Pepe, G., see Lin, C.H. 191 (1998) and semiconducting properties of ho- Petravic, M., see Li, G. 191 (1998) moepitaxially grown phosphorus- Phipps, A.G., see Christopher, G.K. 191 (1998) doped (1 00) and( 1 1 1) diamond films Pistol, M.-E., see Carlsson, N. 191 (1998) by microwave plasma-assisted chem- Poirier, D.R., see Felicelli, $.D. 191 (1998) ical vapor deposition using triethyl- phosphine as a dopant source 191 (1998) 723 Prince, K.E., see Li, G. 191 (1998) Sakai, H., see Kaigawa, K. 191 (1998) 119 Pschorr-Schoberer, E., see Hahn, B. 191 (1998) Sakamoto, T., see Yoshimura, J. 191 (1998) 483 Samuelson, L., see Carlsson, N. 191 (1998) 347 Que, D.L., see Wu, H.Z. 191 (1998) Sato, J.. H. Takeda, H. Morikoshi, K. Shimamura, P. Rudolph and _ T. Radhakrishnan, K., see Yoon, S.F. 191 (1998) Fukuda, Czochralski growth of Rai, R.N., see Rai, U.S. 191 (1998) RE,Ga;SiO,, (RE=La, Pr, Nd) Rai, U.S. and R.N. Rai, Physical chemistry single crystals for the analysis of the of the organic analog of metal—metal influence of rare earth substitution on eutectic and monotectic alloys 191 (1998) piezoelectricity 191 (1998) 746 Ramasamy, P., see Senguttuvan, N. 191 (1998) Sato, T.J., T. Hirano and A.P. Tsai, Rappl, P.H.O., H. Closs, $.O. Ferreira, E. Single-crystal growth of the decagonal Abramof, C. Boschetti, P. Motisuke, Al-Ni-Co quasicrystal 191 (1998) 545 Author index Sawada, T., K. Takemura, K. Shigematsu, Spek, A.L., see ten Grotenhuis, E. 191 (1998) 834 S. Yoda and K. Kawasaki, Effects of Stampe, P.A. and R.J. Kennedy, X-ray gravity on a free dendrite of NH,Cl characterization of MgO thin films grown by dynamic pressure control 191 (1998) 225 grown by laser ablation on yttria-sta- Schaffer, C., see Buschmann, V. 191 (1998) 430 bilized zirconia 191 (1998) Schneider, R., see Brecht, E. 191 (1998) 421 Stampe, P.A. and R.J. Kennedy, X-ray Schweizer, M., see Croll, A. 191 (1998) 365 characterization of MgO thin films grown by laser ablation on SrTiO, and Segato, F., see Bermudez, V. 191 (1998) 589 LaAlO, 191 (1998) Seifert, W., see Carlsson, N. 191 (1998) 347 Stinespring, C.D., see Ziemer, K.S. 191 (1998) Sekerka, R.F., see Coriell, S.R. 191 (1998) 573 Stocker, C., see Alkemper, J. 191 (1998) Sénateur, J.P., see Abrutis, A. 191 (1998) Stringfellow, G.B., see Liu, Z. 191 (1998) Senguttuvan, N., P. Mohan, S.M. Babu Su, C.-H., see Chattopadhyay, K. 191 (1998) and P. Ramasamy, A study of the op- Sugiyama, N., A. Okamoto, K. Okumura, tical and mechanical properties of T. Tani and N. Kamiya, Step structures PbWO, single crystals 191 (1998) and dislocations of SiC single crystals Shealy, J.R., see Wankerl, A. 191 (1998) grown by modified Lely method 191 (1998) Shen, H.M., see Lu, C.J. 191 (1998) Sun, D., see Li, X. 191 (1998) Shiba, T., see Takemi, M. 191 (1998) Sun, D., see Li, X. 191 (1998) Shigematsu, K., see Sawada, T. 191 (1998) Suzuki, J., see Yoshida, S. 191 (1998) Shimamura, K., see Sato, J. 191 (1998) Szczerbakow, A., J. Domagala, D. Rose, K. Shimizu, K., T. Nomura and CK. Durose, V.Yu. Ivanov and A.R. Om- Takahashi, Crystal size distribution of eltchouk, Structural defects and com- aluminum potassium sulfate in a batch positional uniformity in CdTe and crystallizer equipped with different Cd,_,Zn,Te crystals grown by a va- types of impeller 191 (1998) 178 pour transport technique 191 (1998) 673 Shimizu, K., T. Nomura and K. Takahashi, Crystal size distribution of Tabata, T., see Miyazawa, S. 191 (1998) 512 aluminum potassium sulfate in a pro- Takahashi, K., see Shimizu, K. 191 (1998) 178 filed, a dished, or a flat bottom crystal- Takahashi, K., see Shimizu, K. 191 (1998) 185 lizer equipped with a pitched paddle 191 (1998) Takasaki, S., see Anzai, H. 191 (1998) 148 Shimokozono, M., see Kubota, E. 191 (1998) Takeda, H., see Sato, J. 191 (1998) 746 Shin, Y.J., see Lee, H. 191 (1998) Takemi, M., Y. Mihashi, T. Shiba and M. Shou, X., see Wu, H.Z. 191 (1998) Aiga, High-resolution X-ray diffraction Shukri, Z.A. and C.H. Champness, Effect studies on growth interrupted hetero- of nonstoichiometry on conductivity interfaces grown by metalorganic va- type in Bridgman-grown CulnSe, 191 (1998) por-phase epitaxy 191 (1998) 18 Sidorov, M.V., see Gao, Y. 191 (1998) Takemura, K., see Sawada, T. 191 (1998) 225 Skoulika, S., see Domopoulou, A. 191 (1998) Takizawa, T., see Matsushita, H. 191 (1998) 455 Slaoui, A., see Angermeier, D. 191 (1998) Tamamura, K., see Tsukamoto, H. 191 (1998) 679 Smeets, W.J.J., see ten Grotenhuis, E. 191 (1998) Tamura, Y., see Yokoyama, C. 191 (1998) 827 Soares, L.S.M., M.A. Cotta, C.A.C. Men- Tanaka, S., see Anzai, H. 191 (1998) 148 donga, K.M. Ito-Landers and M.M.G. Tanemura, S., see Jin, P. 191 (1998) 285 de Carvalho, Equilibrium shape and Tang, C.C., see Li, Y.X. 191 (1998) 282 nucleation on InP(0 0 1) surfaces: effect Tani, T., see Sugiyama, N. 191 (1998) 84 of surface steps 191 (1998) Taudt, W., J. Xu, A. Hardt, H. Korfer, Q. Sohn, S.H., Interface Madelung constants Liu, H. Hamadeh, H. Lakner, J. for isoelectronic impurities: generalized Woitok and M. Heuken, Optimization Madelung constants 191 (1998) 143 of pre-epitaxial processes to obtain Solnyshkin, D.D., see Kovalenko, S.1. 191 (1998) high-quality ZnSe/GaAs heterointerfa- Sous, S., see Alkemper, J. 191 (1998) ces grown in a low-pressure metalor- ganic vapour-phase epitaxy system 191 (1998) 663 Spanos, N. and P.G. Koutsoukos, The transformation of vaterite to calcite: ef- Tazawa, M., see Jin, P. 191 (1998) 285 fect of the conditions of the solutions in Tegetmeier, A., see Croll, A. 191 (1998) 365 contact with the mineral phase 191 (1998) 783 Teiserskis, A., see Abrutis, A. 191 (1998) 79 918 Author index Ten Grotenhuis, E., A.W. Marsman, white lysozyme using magnetic ori- F.J. Hoogesteger, J.C. van Miltenburg, entation 191 (1998) 199 J.P. van der Eerden, L.W. Jenneskens, Wang, C.A. OMVPE = growth of W.J. Smeets and A.L. Spek, Solid state GalnAsSb in the 2-2.4 um range 191 (1998) 631 structures in spin-coated assemblies of Wang, H., Y. Zeng, H. Zhou and M. Kong, oligo(cyclohexylidene) oxime deriva- Triclinic deformation and anisotropic tives and (partly) saturated analogues: strain relaxation of an InAs film on an atomic force microscopy study 191 (1998) 834 a GaAs(00 1) substrate measured by Terashima, K., see Nakanishi, H. 191 (1998) 711 a series of symmetric double crystal Thiyagarajan, P., see Marone, P.A. 191 (1998) 811 X-ray diffraction 191 (1998) 627 Thompson, D.A., see LaPierre, R.R. 191 (1998) 319 Wang, H.M.., see Li, Y.X. 191 (1998) 282 Tian, Y., see Ning, Y. 191 (1998) 39 Wang Hongmei, see Zhou Hongwei 191 (1998) 361 Tiede, D.M., see Marone, P.A. 191 (1998) 811 Wang Siting, see Zhou Guoging 191 (1998) 517 Tirrell, D.A., see Gower, L.A. 191 (1998) 153 Wang, X.J., see Xu, D.P. 191 (1998) 646 Treholt, C., see Brecht, E. 191 (1998) 421 Wang, Y.N., see Lu, C.J. 191 (1998) 113 Triboulet, R., see Garcia, J.A. 191 (1998) 685 Wankerl, A., D.T. Emerson, M.J. Cook Tsai, A.P., see Sato, T.J. 191 (1998) 545 and J.R. Shealy, Wavelength depend- Tsukada, T., see Hahn, S.-H. 191 (1998) 413 ence of UV laser selective Al,,Ga,_,As Tsukamoto, H., K. Tamamura, M. Nagai, growth via adlayer stimulation in Futoshi Hiei and M. Ikeda, Optical OMVPE 191 (1998) characteristics of ZnCdSe/ZnSSe single Warddrip, M.L., see Kappers, M.J. 191 (1998) quantum wells 191 (1998) 679 Weiss, F., see Abrutis, A. 191 (1998) Twigg, M.E., B.R. Bennett and R. Magno, Wenzl, H., see Oates, W.A. 191 (1998) Morphological instability in Werckmann, J., see Dentel, D. 191 (1998) InAs/GaSb heterostructures 191 (1998) 651 Witz, J., see Bancel, P.A. 191 (1998) Ueta, A.Y., see Rappl, P.H.O. 191 (1998) 466 Woitok, J., see Taudt, W. 191 (1998) Usui, S., see Yoshimura, J. 191 (1998) 483 Wu, G.H., see Li, Y-X. 191 (1998) Wu, H.Z., J.Y. Huang, Z.Z. Ye, X.B. Jiang, Van den Berg, E.P.G., G. Bégels and G.J. X. Shou and D.L. Que, Strain relax- Arkenbout, Growth of «-caprolactam ation in graded SiGe grown by ultra- crystals from the melt: The influence of high vacuum chemical vapor depos- cyclohexanone on the {111} and ition (UHVCVD) 191 (1998) 72 {1 10} forms 191 (1998) 169 Wu, R.H., see Xu, D.P. 191 (1998) 646 Van der Eerden, J.P., see ten Grotenhuis, E. 191 (1998) 834 Wu. W., see Mo, Y. 191 (1998) 459 Van Enckevort, W.J.P., see van Hoof, P.J.C.M. 191 (1998) 861 Xia. Y., see Mo, Y. 191 (1998) 459 Van Hoof, P.J.C.M., see Vogels, L.J.P. 191 (1998) 563 Xu, D.P., H. Yang, L.X. Zheng, X.J. Wang, Van Hoof, P.J.C.M., see Grimbergen, L.H. Duan and R.H. Wu, Gallium dif- R.F.P. 191 (1998) 846 fusion through cubic GaN films grown Van Hoof, P.J.C.M., R.F.P. Grimbergen, on GaAs(1 0 0) at high-temperature us- H. Meekes, W.J.P. van Enckevort and ing low-pressure MOVPE 191 (1998) 646 P. Bennema, Morphology of ortho- Xu, J., see Taudt, W. 191 (1998) 663 rhombic n-paraffin crystals: a compari- Xu Jun, see Zhou Guoging 191 (1998) 517 son between theory and experiments 191 (1998) 861 Xu Ke, see Zhou Guoging 191 (1998) 517 Van Miltenburg, J.C., see ten Grotenhuis, Xu Shao-hong, see Jiang Xue-yin 191 (1998) 692 E. 191 (1998) 834 Xu, X.G., Ch. Giesen, R. H6vel, M. Heu- Van Tendeloo, G., see Buschmann, V. 191 (1998) 430 ken and K. Heime, Surface morpho- Verkhovtseva, E.T., see Kovalenko, S.I. 191 (1998) 553 logy and growth rate variation of InP Vogels, L.J.P., P.J.C.M. van Hoof and on patterned substrates using terti- R.F.P. Grimbergen, On the roughening arybutylphosphine 191 (1998) 341 transition of anisotropic and (pseudo) hexagonal lattices 191 (1998) 563 Yamada, J.-i., see Anzai, H. 191 (1998) 148 Wagner, A.M., see Marone, P.A. 191 (1998) 811 Yamamoto, K., see Kawaguchi, T. 191 (1998) 125 Wakayama, N.I., Quantitative study of Yang, H., see Xu, D.P. 191 (1998) 646 crystallization kinetics of hen egg- Yang, Z., see Cheng, L. 191 (1998) 641 Author index Ye, Z.Z., see Wu, H.Z. 191 (1998) 72 Zeng, Y., see Wang, H. 191 (1998) 627 Yeckel, A., Y. Zhou, M. Dennis and J.J. Zeng Yiping, see Zhou Hongwei 191 (1998) 361 Derby, Three-dimensional computa- Zhang, B., see Ning, Y. 191 (1998) 39 tions of solution hydrodynamics dur- Zhang, G., see Cheng, L. 191 (1998) 641 ing the growth of potassium Zhang, H., see Zheng, L.L. 191 (1998) 243 dihydrogen phosphate II. Spin down 191 (1998) 206 Zhang, J., see Li, X. 191 (1998) 31 Yoda, S., see Sawada, T. 191 (1998) 225 Zhang, J., see Li, X. 191 (1998) 34 Yokoyama, C., Y. Tamura and _ ¥Y. Zhang, L.T., see Chen, C.-M. 191 (1998) 873 Nishiyama, Crystal growth rates of Zhang, P.H., see Yoon, S.F. 191 (1998) 24 tricaprin and trilaurin under high pres- Zhang, P.H., see Yoon, S.F. 191 (1998) 613 sures 191 (1998) 827 Zhang, Z., see Cheng, L. 191 (1998) 641 Yonenaga, I. and M. Nonaka, Czochralski Zhang Zhi-lin, see Jiang Xue-yin 191 (1998) 692 growth of bulk crystals of Ge, _,Si, Zheng, H.Q., see Yoon, S.F. 191 (1998) 24 alloys II. Si-rich alloys 191 (1998) 393 Zheng, H.Q., see Yoon, S.F. 191 (1998) 613 Yonenaga, I. and Y. Murakami, Segrega- Zheng, L.L., D.J. Larson Jr. and H. Zhang, tion during the seeding process in the Role of thermotransport (Soret effect) Czochralski growth of GeSi alloys 191 (1998) 399 in macrosegregation during eutectic/ Yoon, C.S., see Ryu, G. 191 (1998) 190 off-eutectic directional solidification 191 (1998) 243 Yoon, C.S., see Ryu, G. 191 (1998) 492 Zheng, L.X., see Xu, D.P. 191 (1998) 646 Yoon, S.F., P.H. Zhang, H.Q. Zheng and Zhong Heyu, see Zhou Guoging 191 (1998) 517 K. Radhakrishnan, The effects of ar- Zhong, X., see Lin, L. 191 (1998) 586 senic pressure on the properties of Zhou Guoging, Xu Jun, Chen Xingda, In, _,-yGa,Al,As layers grown by mo- Zhong Heyu, Wang Siting, Xu Ke, lecular beam epitaxy 191 (1998) 24 Deng Peizhen and Gan Fuxi, Growth Yoon, S.F., K.W. Mah, H.Q. Zheng and and spectrum of a novel birefringent «- P.H. Zhang, Effects of substrate tem- BaB,O, crystal 191 (1998) 517 perature on the properties of Zhou, H., see Wang, H. 191 (1998) 627 Ino 4gGao.52P grown by molecular- Zhou Hongwei, Zeng Yiping, Wang Hong- beam epitaxy using a valved phos- mei, Dong Jianrong, Zhu Zhanping, phorus cracker cell 191 (1998) 613 Pan Liang and Kong Meiying, Growth Yoon, S.Y., see Hong, S.K. 191 (1998) 275 and transport properties of InAs thin Yoshida, S. and J. Suzuki, High quality films on GaAs 191 (1998) 361 GaN grown by a gas-source molecu- Zhou, T., see Ning, Y. 191 (1998) 39 lar-beam epitaxy and its electrical Zhou, W.C., see Chen, C.-M. 191 (1998) 873 property 191 (1998) 279 Zhou, Y., see Yeckel, A. 191 (1998) 206 Yoshimura, J., T. Sakamoto, S. Usui and S. Zhu, S., see Li, X. 191 (1998) 34 Kimura, X-ray perfection study of Ver- Zhu Zhanping, see Zhou Hongwei 191 (1998) 361 neuil-grown SrTiO, crystals 191 (1998) 483 Ziemer, K.S., C.D. Stinespring, L.S. Hirsch Yoshino, T., see Kawaguchi, T. 191 (1998) 125 and T.H. Myers, Characterization of Youn, C.J., see Lee, H. 191 (1998) 59 atomic hydrogen-etched HgCdTe sur- Yu, P.Y., see Lee, H. 191 (1998) 59 faces 191 (1998) 594 Yuan, G., see Ning, Y. 191 (1998) 39 JOURNAL OF CRYSTAL GROWTH ELSEVIER Journal of Crystal Growth 191 (1998) 920-9 tNN e Subject index Apparatus — of succinonitrile-carbontetrabromide system 234 - for directional solidification of aluminum-silicon 252 Heat flow control, of — for forced stirring Czochralski of melt growth 774 ~— Czochralski growth of silicon 413 ~ for high pressure optical vessel 827 Heterostructures, see Device materials ~ for multi-zone Mellen furnace 904 Hydrodynamics, see Convection ~— for protein crystal growth 537 ~ for pyrochlore anti-ferromagnet growth Tb,Ti,O, 740 Kinetics ~— for vertical Bridgman with submerged heater 904 — of dendritic growth 298 ~ of growth 24, 34, 44, 166, 169, 178, 185, 199, 553, 651, 697, 760, Computer simulation 811, 827, 834, 861 — of alpha-glycine 791 ~ of growth element shaped method 779 ~ of convection 206 of interface control 18, 143, 166, 178, 282, 347 ~ of ductile solidification 261 of nucleation 178, 185, 421, 525, 811 ~ of gamma-aminobutyric acid 803 ~ of precursor analysis | ~ of heat transfer 413 — of sedimentation 199 ~ of molecular orbitals in gas phase 405 — of transformation 783 ~ of thermotransport 243 of X-ray diffraction 161 Lasers, see Device characterization Constitutional supercooling Lasers, crystals for ~ of a planar solidifying interface 889 ~ alumina 520 Convection 206, 225, 760, 774, 879 — holmium: yttrium aluminum borate 767 - nonlinear optical crystals 135 Device characterisation — sapphire 779 — electronic materials 97, 746 Lysozyme 199 | ferroelectric materials 113 heterostructures 466 Melt growth technique | lasers 275 ~ by Bridgman-—Stockbarger method — quantum dots and wires 347 ~ — of copper zinc diselenide 97 — quantum wells 679 ~ — of epsilon-caprolactam 169 Diffusional control ~ of manganese bismuth 243 - of gallium nitride 646 — by cold traveling heater mother ~ of tellurium in gallium antimonide 904 ~ — of zinc telluride 685 Doping - by Czochralski method ~— of zinc in gallium arsenide 357 ~ — of alpha-barium borate 517 ~ — of gallium arsenide 303 Electronic materials, see Device characterization ~ — of lead tungstate 130 Epitaxy, see Thin film growth ~ of lithium niobate 589 Etching — of rare earth gallium silicon dioxide 746 — chemical 153, 275, 589, 594 ~ — of silicon 413 ~ of low-angle boundaries 108 ~ — of silicon germanium 393, 399 Eutectic growth - by edge-defined film-fed growth — of aluminum-silicon 252 - — of alumina 520 ~ of Al-CuAl, 558 ~ by floating zone method of LaB,-ZnB, 873 ~ — of decagonal aluminum-—nickel—cobalt 545 0022-0248/98/$19.00 © 1998 Elsevier Science B.V. 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