JOURNAL OF CRYSTAL GROWTH ELSEVIER Journal of Crystal Growth 180 (1997) 714-719 Author index Abricka, M., J. Kriimins and Yu. Gelfgat, Nu- Ben Hadid, H., D. Henry and R. Touihn, merical simulation of MHD rotator action Unsteady three-dimensional buoyancy- on hydrodynamics and heat transfer in driven convection in a circular cylindrical single crystal growth processes 180 (1997) 388 cavity and its damping by magnetic Ahmed, M.U., S.J.C. Irvine, A. Stafford, L.M. field 180 (1997) 433 Smith, A.C. Jones and S.A. Rushworth, Bergunde, T., M. Dauelsberg, L. Kadinski, Decomposition behaviour of nitrogen pre- Yu.N. Makarov, V.S. Yuferev, D. Schmitz, cursors for p-type doping of pyrolytic and G. Strauch and H. Jiirgensen, Process opti- 180 (19971)6 7 photoassisted MOVPE of ZnSe misation of MOVPE growth by numerical 180 (1997) 1 Aiga, M., see Takemi, M. modelling of transport phenomena includ- Akiyama, Y., see Imaishi, N. 180 (19976)8 0 ing thermal radiation 180 (19976)6 0 Amon, J., see Weimann, H. 180 (19975)6 0 Bernard, M., see Corre, S. 180 (19976)0 4 Angelier, B., see Santailler, J.L. 180 (19976)9 8 Bertrand, F., see Davoust, L. 180 (19974)2 2 Aota, J., see Maffei, N. 180 (19971)0 5 Bertrand, O., see Holuigue, J. 180 (19975)9 7 Aoyagi, Y., see Ishii, M. 180 (1997) 15 Bliss, D.F., see Zou, Y.F. 180 (19975)2 4 Arquis, E., see Holuigue, J. 180 (19975)9 7 Boiton, P., see Santailler, J.L. 180 (19976)9 8 Assaker, R., N. Van den Bogaert and F. Dup- Bondarenko, G.V., see Balitsky, D.V. 180 (19972)1 2 ret, Time-dependent simulation of the Buhrig, E., see Barz, R.U. 180 (19974)1 0 growth of large silicon crystals by the Czochralski technique using a turbulent model for melt convection 180 (1997) 450 Atherton, L.J., see Zaitseva, N.P. 180 (1997) 255 Capelle, B., see Zaccaro, J. 180 (1997) 229 Chen, G., A. Lizée and B. Roux, Bifurcation analysis of the thermocapillary convection Bae, I.H., see Leem, J.Y. 180 (1997) 40 in cylindrical liquid bridges 180 (1997) 638 Bae, S.I., J. Ichikawa, K. Shimamura, H. Chen Zhiwen, Zhang Shuyuan, Tan Shun, Onodera and T. Fukuda, Doping effects of Li Fanging, Wang Jian, Jin Sizhao and Mg and/or Fe ions on congruent LiNbO; Zhang Yuheng, Preparation and electron single crystal growth 180 (1997) 94 spin resonance effect of nanometer-sized Balitsky, D.V., V.S. Balitsky, D.Yu. Push- Mn,0, 180 (19972)8 0 charovsky, G.V. Bondarenko and A.V. Cherng, Y.T., see Sze, P.W. 180 (19971)7 7 Kosenko, Growth and characterization of Chiang, C.D., see Sze, P.W. 180 (19971)7 7 GeO, single crystals with the quartz struc- Cho, Y.K., see Leem, J.Y. 180 (1997) 40 ture 180 (1997) 212 Cho, Young Sang, see Chung, Won Young 180 (19976)9 1 Balitsky, V.S., see Balitsky, D.V. 180 (19972)1 2 Choi, Jung-Il, Seungtae Kim, Hyung Jin Sung, Barat, C., see Santailler, J.L. 180 (1997) 698 A. Nakano and H.S. Koyama, Transition Baruchel, J., see Rejmankova, P. 180 (1997) 85 flow modes in Czochralski convection 180 (1997) 305 Barz, R.U., G. Gerbeth, U. Wunderwald, E. Choi, Yong Dae, see Nam, Sungun 180 (1997) 47 Buhrig and Yu.M. Gelfgat, Modelling of Chou, W.Y., see Sze, P.W. 180 (1997) 177 the isothermal melt flow due to rotating Chui, W.K., J. Glimm, F.M. Tangerman, H. magnetic fields in crystal growth 180 (1997) 410 Zhang and V. Prasad, A parallel algorithm Barz, R.U., P. Sabhapathy and M. Salcudean, for multizone, multiphase systems with ap- A numerical study of convection during plication to crystal growth 180 (1997) 534 THM growth of CdTe with ACRT 180 (1997) 566 Chun, Ch.-H., see Lee, Y.-S. 180 (1997) 477 Author index 715 Chung, Won Young, Do Hyun Kim and Faleev, N.N., see Mishurnyi, V.A. 180 (1997) 34 Young Sang Cho, Modelling of Cu thin Faure, J., see Simon, L. 180 (19971)8 5 film growth by MOCVD process in a verti- Feigelson, R.S., see Lee, M. 180 (19972)2 0 cal reactor 180 (1997) 691 Ferriol, M., see Palumbo-Romand, V. 180 (19972)3 8 Clavaguera, N., see Palumbo-Romand, V. 180 (1997) 238 Ferriol, M., see Clavaguera, N. 180 (19972)4 8 Clavaguera, N., V. Palumbo-Romand, M. Flaherty, J.E., see Givoli, D. 180 (19975)1 0 Ferriol and M.T. Cohen-Adad, Crystalli- Fukuda, T., see Bae, S.I. 180 (1997) 94 zation mechanisms of stoichiometric mono- Fukuda, T., see Tsukada, T. 180 (19975)4 3 methylhydrazine—water mixtures 180 (1997) 248 Furukawa, Y., see Park, B.M. 180 (19971)0 1 Cohen-Adad, M.T., see Palumbo-Romand, V. 180 (1997) 238 Cohen-Adad, M.T., see Clavaguera, N. 180 (1997) 248 Gallagher, H.G., see Qi, X. 180 (1997) 73 Corre, S., T. Duffar, M. Bernard and M. Es- Gates, D.J., Surface angle transitions and pezel, Numerical simulation and valida- facets in a solvable TSK model of steady tion of the Peltier pulse marking of 180 (19971)3 6 crystal growth solid/liquid interfaces 180 (1997) 604 180 (19973)8 8 Gelfgat, Yu. M., see Abricka, M. Cowley, M.D., see Davoust, L. 180 (1997) 422 180 (19974)1 0 Gelfgat, Yu.M., see Barz, R.U. 180 (19974)1 0 Gerbeth, G., see Barz, R.U. Dauelsberg, M., see Bergunde, T. 180 (1997) 660 180 (19976)9 8 Giacometti, N., see Santailler, J.L. Davoust, L., R. Moreau, M.D. Cowley, P.A. 180 (19976)7 0 Giovangigli, V., see Ern, A. Tanguy and F. Bertrand, Numerical and Givoli, D., J.E. Flaherty and M.S. Shephard, analytical modelling of the MHD buoy- Analysis of InP LEC melt flows using ancy-driven flow in a Bridgman crystal 180 (19975)1 0 180 (19974)2 2 a parallel adaptive finite element scheme growth configuration 180 (19975)3 4 180 (1997) 34 Glimm, J., see Chui, W.K. De Anda, F., see Mishurnyi, V.A. 180 (19971)1 3 180 (19972)5 5 Godlewski, Jr., T.S., see Lenhoff, A.M. De Yoreo, J.J., see Zaitseva, N.P. 180 (1997) 34 180 (19972)5 5 Gorbatchev, A.Yu., see Mishurnyi, V.A. Dehaven, M.R., see Zaitseva, N.P. 180 (19973)4 3 180 (19974)9 7 Graf, D., see Dornberger, E. Derby, J.J., see Zhou, Y. 180 (19973)5 3 180 (1997) 81 Graf, D., see Vanhellemont, J. Dieckmann, R., see Markgraf, S.A. 180 (19971)1 3 Grein, C.H., First principles calculations of Dilmore, J.G., see Lenhoff, A.M. 180 (1997) 54 Si(2 1 1) surface reconstructions Dornberger, E., D. Graf, M. Suhren, U. Lam- bert, P. Wagner, F. Dupret and W. von Ammon, Influence of boron concentration Han, T.P.J., see Qi, X. 180 (1997) 73 on the oxidation-induced stacking fault Hasebe, M., see Tanaka, M. 180 (1997) 487 ring in Czochralski silicon crystals 180 (1997) 343 Henderson, B., see Qi, X. 180 (1997) 73 Dornberger, E., E. Tomzig, A. Seidl, S. Henry, D., see Ben Hadid, H. 180 (1997) 433 Schmitt, H.-J. Leister, Ch. Schmitt and G. Higgs, V., see Vanhellemont, J. 180 (1997) 353 Miller, Thermal simulation of the Czoch- Holuigue, J.,O. Bertrand and E. Arquis, Sol- ralski silicon growth process by three utal convection in crystal growth: effect of different models and comparison with ex- interface curvature on flow structuration perimental results 180 (19974)6 1 in a three-dimensional cylindrical config- Duffar, T., see Corre, S. 180 (19976)0 4 uration 180 (19975)9 7 Duffar, T., see Tatarchenko, V.A. 180 (19976)1 5 Hou Xun, see Wang Xiaoliang 180 (1997) 22 Duffar, T., see Santailler, J.L. 180 (19976)9 8 180 (19971)7 7 Houng, M.P., see Sze, P.W. Dupret, F., see Dornberger, E. 180 (19973)4 3 Hozawa, M., see Kobayashi, M. 180 (19971)5 7 Dupret, F., see Assaker, R. 180 (19974)5 0 Hozawa, M., see Tsukada, T. 180 (19975)4 3 Dupret, F., see Olivari, E. 180 (19976)2 7 Hwang, J.S., see Sze, P.W. 180 (19971)7 7 Dusserre, P., see Santailler, J.L. 180 (19976)9 8 180 (19972)2 9 Eguchi, M., see Kakimoto, K. 180 (1997) 442 Ibanez, A., see Zaccaro, J. 180 (1997) 94 Ern, A., V. Giovangigli and M.D. Smooke, Ichikawa, J., see Bae, S.1. 180 (19973)6 3 Detailed modeling of three-dimensional lida, M., see Takano, K. 180 (1997) 61 chemical vapor deposition 180 (1997) 670 lida, T., see Nakamura, K. 180 (19973)6 3 Espezel, M., see Corre, S. 180 (1997) 604 lino, E., see Takano, K. 180 (19975)4 3 Imaishi, N., see Tsukada, T. Fainberg, J., H.-J. Leister and G. Miller, Nu- Imaishi, N., T. Sato, M. Kimura and Y. merical simulation of the LEC-growth of Akiyama, Micro/macro modeling of CVD GaAs crystals with account of high-pres- synthesis 180 (1997) 680 sure gas convection 180 (1997) 517 Irvine, S.J.C., see Ahmed, M.U. 180 (1997) 167 716 Author index Ishii, M., S. Iwai, H. Kawata, T. Ueki and Y. Kubota, T., see Nakamura, K. 180 (1997) 61 Aoyagi, Atomic layer epitaxy of AIP and Kuriakose, A.K., see Maffei, N. 180 (1997) 105 its application to X-ray multilayer mirror 180 (1997) 15 Iwai, S., see Ishii, M. 180 (1997) 15 Lambert, U., see Dornberger, E. 180 (1997) 343 Lambert, U., see Vanhellemont, J. 180 (1997) 353 Lan, C.W. and C.R. Song, Growth of benzil Jacmin, P., see Olivari, E. 180 (1997) 627 crystals by vertical dynamic gradient freeze Jacobs, M.H.G., see van Braak, J. 180 (1997) 315 technique in a transparent furnace 180 (1997) 127 Jarvinen, J., R. Nieminen and T. Tiihonen, Lan, C.W. and M.C. Liang, Modulating Time-dependent simulation of Czochralski dopant segregation in floating-zone silicon silicon crystal growth 180 (19974)6 8 growth in magnetic fields using rotation 180 (19973)8 1 Jeon, Gyung-Nam, see Nam, Sungun 180 (1997) 47 Lan, C.W., see Liang, M.C. 180 (19975)8 7 Ji, Y., see Park, B.M. 180 (19971)0 1 Larson, Jr., D.J., see Zheng, L.L. 180 (19972)9 3 Jin Sizhao, see Chen Zhiwen 180 (19972)8 0 Lee, C.R., see Leem, J.Y. 180 (1997) 40 Jones, A.C., see Ahmed, M.U. 180 (19971)6 7 Lee, Choon-Ho, see Nam, Sungun 180 (1997) 47 Jung, T., see Weimann, H. 180 (19975)6 0 Lee, D.K., see Leem, J.Y. 180 (1997) 40 Jurgensen, H., see Bergunde, T. 180 (19976)6 0 Lee, J.-W., see Kim, S.H. 180 (19971)9 8 Lee, Ki-Seon, see Nam, Sungun 180 (1997) 47 Lee, M. and R.S. Feigelson, Growth of epi- Kadinski, L., see Bergunde, T. 180 (1997) 660 taxial strontium barium niobate thin films Kakimoto, K., M. Eguchi and H. Ozoe, Use of by solid source metal-organic chemical va- an inhomogeneous magnetic field for sili- por deposition 180 (1997) 220 con crystal growth 180 (1997) 442 Lee, Y.-S. and Ch.-H. Chun, Experiments on Kakinoki, K., see Tsukada, T. 180 (1997) 543 the oscillatory convection of low Prandtl Kawata, H., see Ishii, M. 180 (1997) 15 number liquid in Czochralski configura- Kim, C.S., see Leem, J.Y. 180 (1997) 40 tion for crystal growth with cusp magnetic Kim, Do Hyun, see Chung, Won Young 180 (1997) 691 field 180 (1997) 477 Kim, S.H., Y.S. Park, W.S. Yun and J.-W. Lee, Enhancement of diamond film uniformity Leem, J.Y., C.R. Lee, C.S. Kim, Y.K. Cho, S.K. Noh, J.S. Son, D.K. Lee and I.H. Bae, in a biased microwave-plasma-enhanced Molecular beam epitaxial growth and chemical vapor deposition system 180 (1997) 198 properties of high-quality ZnS,Se,_, on Kim, Seungtae, see Choi, Jung-Il 180 (1997) 305 180 (1997) 40 GaAs(0 0 1) substrate Kimura, M., see Takano, K. 180 (1997) 363 180 (19974)6 1 Kimura, M., see Imaishi, N. 180 (1997) 680 Leister, H.-J., see Dornberger, E. 180 (19975)1 7 Kimura, S. and K. Terashima, A review of Leister, H.-J., see Fainberg, J. Lenhoff, A.M., P.E. Pjura, J.G. Dilmore and measurement of thermophysical properties of silicon melt 180 (1997) 323 T.S. Godlewski, Jr., Ultracentrifugal crys- tallization of proteins: transport-kinetic Kimura, T., see Takemi, M. 180 (1997) 1 modelling, and experimental behavior of Kissinger, G., see Vanhellemont, J. 180 (1997) 353 180 (19971)1 3 catalase Kitamura, K., see Park, B.M. 180 (1997) 101 180 (19972)8 0 Li Fanging, see Chen Zhiwen Kobayashi, M., T. Tsukada and M. Hozawa, 180 (1997) 27 Effect of internal radiative heat transfer on Li, X.B., see Yoon, S.F. 180 (19973)8 1 the convection in CZ oxide melt 180 (1997) 157 Liang, M.C., see Lan, C.W. Kobayashi, S., Mathematical modeling of Liang, M.C. and C.W. Lan, Three-dimen- sional thermocapillary and buoyancy con- grown-in defects formation in Czochralski silicon 180 (1997) 334 vections and interface shape in horizontal Bridgman crystal growth 180 (1997) 587 Kolesnikova, E.N., Yu.A. Polovko, VS. Yuferev and A.I. Zhmakin, Influence of Lizée, A., see Chen, G. 180 (1997) 638 Coriolis force on thermal convection and Lopez, D.O., see van Braak, J. 180 (1997) 315 Lyubimoy, D.V., T.P. Lyubimova, S. Meradji impurity segregation during crystal and B. Roux, Vibrational control of crystal growth under microgravity 180 (19975)7 8 Kong Meiying, see Wang Xiaoliang 180 (1997) 22 growth from liquid phase 180 (1997) 648 Kong, M.Y, see Yoon, S.F. 180 (1997) 27 Lyubimova, T.P., see Lyubimov, D.V. 180 (1997) 648 Kosenko, A.V., see Balitsky, D.V. 180 (19972)1 2 Kotooka, T., see Nakamura, K. 180 (1997) 61 Ma, N. and J.S. Walker, Validation of strong Koyama, H.S., see Choi, Jung-II 180 (19973)0 5 magnetic field asymptotic models for Krimins, J., see Abricka, M. 180 (19973)8 8 dopant transport during semiconductor Kubler, L., see Simon, L. 180 (19971)8 5 crystal growth 180 (1997) 401 Author index 717 Maffei, N., D.H.H. Quon, J. Aota, A.K. Pangborn, M.F., see Markgraf, S.A. 180 (1997) 81 Kuriakose and M.Z. Saghir, Float-zone Park, B.M., K. Kitamura, K. Terabe, Y. crystal growth of Bi,;,GeO, in a micro- Furukawa, Y. Ji and E. Suzuki, Mechan- gravity environment 180 (1997) 105 ical twinning in stoichiometric lithium nio- Makarov, Yu.N., see Bergunde, T. 180 (1997) 660 bate single crystal 180 (19971)0 1 Makita, K., see Tsuji, M. 180 (1997) 9 Park, Y.S., see Kim, S.H. 180 (19971)9 8 Markgraf, S.A., M.F. Pangborn and R. Dieck- Pjura, P.E., see Lenhoff, A.M. 180 (19971)1 3 mann, Influence of different divalent co- Polovko, Yu.A., see Kolesnikova, E.N. 180 (19975)7 8 dopants on the Cr** content of Cr-doped Prasad, V., see Zou, Y.F. 180 (19975)2 4 Y3Al1;O;> 180 (1997) 81 Prasad, V., see Chui, W.K. 180 (19975)3 4 Meradji, S., see Lyubimov, D.V. 180 (1997) 648 Pushcharovsky, D.Yu., see Balitsky, D.V. 180 (19972)1 2 Mihashi, Y., see Takemi, M. 180 (1997) 1 Mishurnyi, V.A., F. de Anda, A.Yu. Gor- Qi, X., H.G. Gallagher, T.P.J. Han and B. batchev, V.I. Vasil’ev and N.N. Faleev, Henderson, Modified Czochralski growth InGaAsSb growth from Sb-rich solutions 180 (1997) 34 and characterization of RETiNbO, crys- Montgomery, K.E., see Zaitseva, N.P. 180 (19972)5 5 tals 180 (1997) 73 180 (19974)2 2 Moreau, R., see Davoust, L. Quon, D.H.H., see Maffei, N. 180 (1997) 105 Muiznieks, A., see Mithlbauer, A. 180 (19973)7 2 Muhlbauer, A., A. Muiznieks and J. Virbulis, Rejmankova, P., J. Baruchel, P. Villeval and Analysis of the dopant segregation effects C. Saunal, Characterization of large at the floating zone growth of large silicon KTiOPO, flux grown crystals by synchro- crystals 180 (19973)7 2 tron radiation topography 180 (1997) 85 Miller, G., see Dornberger, E. 180 (19974)6 1 Rhee, Jongkwang, see Nam, Sungun 180 (1997) 47 Miller, G., see Fainberg, J. 180 (19975)1 7 Richardson, M., see Zaitseva, N.P. 180 (19972)5 5 180 (19975)6 0 Muller, G., see Weimann, H. Roux, B., see Tatarchenko, V.A. 180 (19976)1 5 Roux, B., see Chen, G. 180 (19976)3 8 Nabot, J.Ph., see Tatarchenko, V.A. 180 (1997) 615 Roux, B., see Lyubimov, D.V. 180 (19976)4 8 Nabot, J.Ph., see Santailler, J.L. 180 (1997) 698 Rushworth, S.A., see Ahmed, M.U. 180 (19971)6 7 Nakamura, K., T. Saishoji, T. Kubota, T. lida, Y. Shimanuki, T. Kotooka and_ J. Sabhapathy, P., see Barz, R.U. 180 (19975)6 6 Tomioka, Formation process of grown-in Saghir, M.Z., see Maffei, N. 180 (19971)0 5 defects in Czochralski grown silicon crys- Saishoji, T., see Nakamura, K. 180 (1997) 61 tals 180 (1997) 61 Saito, N., see Tanaka, M. 180 (19974)8 7 180 (19973)0 5 Nakano, A., see Choi, Jung-I] Salcudean, M., see Barz, R.U. 180 (19975)6 6 Nam, Sungun, Jongkwang Rhee, Byungsung Salud, J., see van Braak, J. 180 (19973)1 5 O, Ki-Seon Lee, Yong Dae Choi, Gyung- Sangwal, K., J. Servat, F. Sanz and J. Torrent- Nam Jeon and Choon-Ho Lee, Character- Burgués, AFM study of etching of cleaved ization and growth of high quality ZnTe {100} faces of L-arginine phosphate 180 (1997) 47 epilayers by hot-wall epitaxy monohydrate single crystals. I. Dislocation 180 (19974)6 8 Nieminen, R., see Jarvinen, J. etch pits and step bunching 180 (1997) 263 180 (1997) 40 Noh, S.K., see Leem, J.Y. Sangwal, K., J. Torrent-Burgués, F. Sanz and J. Servat, AFM study of etching of cleaved O, Byungsung, see Nam, Sungun 180 (1997) 47 {100} faces of L-arginine phosphate Olivari, E., P. Jacmin, N. van den Bogaert, V. monohydrate single crystals. I]. Two-di- Wertz and F. Dupret, The use of a reduced mensional nucleation, formation of spiral model for on-line simulations of the elevations and decoration of dissolution Czochralski growth of single crystals 180 (1997) 627 layers 180 (19972)7 4 Onodera, H., see Bae, S.I. 180 (1997) 94 Santailler, J.L., T. Duffar, F. Théodore, P. Oonk, H.A.J., see van Braak, J. 180 (1997) 315 Boiton, C. Barat, B. Angelier, N. Ozoe, H., see Kakimoto, K. 180 (1997) 442 Giacometti, P. Dusserre and J.P. Nabot, Some features of two commercial soft- Palumbo-Romand, V., M. Ferriol, M.T. Co- wares for the modeling of bulk crystal hen-Adad and N. Clavaguera, Nucleation growth processes 180 (1997) 698 and crystallization phenomena in stoichio- Sanz, F., see Sangwal, K. 180 (1997) 263 metric monomethylhydrazinewater mix- Sanz, F., see Sangwal, K. 180 (1997) 274 tures 180 (1997) 238 Sato, T., see Imaishi, N. 180 (1997) 680 Palumbo-Romand, V., see Clavaguera, N. 180 (1997) 248 Saunal, C., see Reymankova, P. 180 (1997) 85 718 Author index Schmitt, Ch., see Dornberger, E. 180 (19974)6 1 Tangerman, F.M., see Chui, W.K. 180 (1997) 534 Schmitt, S., see Dornberger, E. 180 (19974)6 1 Tanguy, P.A., see Davoust, L. 180 (1997) 422 Schmitz, D., see Bergunde, T. 180 (19976)6 0 Tatarchenko, E.V., see Tatarchenko, V.A. 180 (1997) 615 180 (19971)8 5 Schott, M., see Simon, L. Tatarchenko, V.A., V.S. Uspenski, E.V. Tatar- 180 (19974)6 1 Seidl, A., see Dornberger, E. chenko, J.Ph. Nabot, T. Duffar and B. Senkader, S., see Vanhellemont, J. 180 (19973)5 3 Roux, Theoretical model of crystal growth Servat, J., see Sangwal, K. 180 (19972)6 3 shaping process 180 (19976)1 5 180 (19972)7 4 180 (19971)0 1 Servat, J., see Sangwal, K. Terabe, K., see Park, B.M. 180 (19975)1 0 180 (19973)2 3 Shephard, M.S., see Givoli, D. Terashima, K., see Kimura, S. 180 (1997) 1 180 (19976)9 8 Shiba, T., see Takemi, M. Théodore, F., see Santailler, J.L. 180 (1997) 1 180 (19974)6 8 Shibata, K., see Takemi, M. Tiihonen, T., see Jarvinen, J. 180 (1997) 94 180 (1997) 61 Shimamura, K., see Bae, S.I. Tomioka, J., see Nakamura, K. 180 (19975)4 3 180 (19974)6 1 Shimamura, K., see Tsukada, T. Tomzig, E., see Dornberger, E. 180 (1997) 61 180 (19972)6 3 Shimanuki, Y., see Nakamura, K. Torrent-Burgues, J., see Sangwal, K. 180 (19972)7 4 Simon, L., J. Fauré, L. Kubler and M. Schott, Torrent-Burgués, J., see Sangwal, K. 180 (19974)3 3 Stress driven spontaneous mesoscopic Touihri, R., see Ben Hadid, H. 180 (19973)5 3 alloy decomposition and ordering along Trauwaert, M.-A., see Vanhellemont, J. step bunches during epitaxial Si, _,C, Tsuji, M., K. Makita, I. Watanabe and K. alloy growth on Si 180 (19971)8 5 Taguchi, High-crystallinity MOVPE- Smith, L.M., see Ahmed, M.U. 180 (19971)6 7 grown sawtooth-bandgap In, - ,- ,Ga,Al,As Smooke, M.D., see Ern, A. 180 (19976)7 0 for use in staircase avalanche photodiodes 180 (1997) 9 180 (1997) 40 180 (19971)5 7 Son, J.S., see Leem, J.Y. Tsukada, T., see Kobayashi, M. 180 (19971)2 7 Song, C.R., see Lan, C.W. Tsukada, T., K. Kakinoki, M. Hozawa, N. 180 (19971)6 7 Stafford, A., see Ahmed, M.U. Imaishi, K. Shimamura and T. Fukuda, 180 (19976)6 0 Strauch, G., see Bergunde, T. Numerical and experimental studies on 180 (19973)4 3 180 (19975)4 3 Suhren, M., see Dornberger, E. crack formation in LiNbO; single crystal 180 (1997) 22 Sun Dianzhao, see Wang Xiaoliang 180 (19973)0 5 Sung, Hyung Jin, see Choi, Jung-I1 180 (19971)0 1 Ueki, T., see Ishii, M. 180 (1997) 15 Suzuki, E., see Park, B.M. Sweegers, A.J.R., see van den Berg, E.P.G. 180 (19972)8 4 Uspenski, V.S., see Tatarchenko, V.A. 180 (1997) 615 Sze, P.W., N.F. Wang, M.P. Houng, Y.H. Wang, J.S. Hwang, W.Y. Chou, Y.T. Van Braak, J.. D.O. Lopez, J. Salud, J.LI. Cherng, C.H. Wang and C.D. Chiang, Ef- Tamarit, M.H.G. Jacobs and H.A.J. Oonk, fects of substrate preheating for the growth The system carbon tetrabromide + hexa- of Zn,Cd, -,Te/(100)GaAs by MOCVD 180 (1997) 177 chloroethane analysis of the plastic—cry- stalline +- liquid equilibrium 180 (1997) 315 180 (1997) 9 Taguchi, K., see Tsuji, M. Van den Berg, E.P.G., A.J.R. Sweegers, M.A. 180 (1997) 1 Takamiya, S., see Takemi, M. Verheijen and W.J.P. van Enckevort, In Takano, K., M. lida, E. lino, M. Kimura and situ topography of the (200) face of €- H. Yamagishi, Relationship between caprolactam growing from the vapour 180 (19972)8 4 grown-in defects and thermal history dur- phase 180 (19974)5 0 ing CZ Si crystal growth 180 (1997) 363 Van den Bogaert, N., see Assaker, R. 180 (19976)2 7 Takei, H., see Tanaka, T. 180 (1997) 206 Van den Bogaert, N., see Olivari, E. Takemi, M., T. Kimura, T. Shiba, K. Shibata, Van Enckevort, W.J.P., see van den Berg, Y. Mihashi, S. Takamiya and M. Aiga, E.P.G. 180 (1997) 284 Metalorganic vapor-phase epitaxial re- Vanhellemont, J., S. Senkader, G. Kissinger, growth of InP on reactive ion-etched mesa V. Higgs, M.-A. Trauwaert, D. Graf, U. structures for p-substrate buried hetero- Lambert and P. Wagner, Measurement, structure laser application 180 (1997) 1 modelling and simulation of defects in as- Tamarit, J.LI., see van Braak, J. 180 (1997) 315 grown Czochralski silicon 180 (19973)5 3 Tan Shun, see Chen Zhiwen 180 (1997) 280 Vasil’ev, M.G., see Yuferev, V.S. 180 (19975)5 1 Tanaka, M., M. Hasebe and N. Saito, Pattern Vasil’ev, V.I., see Mishurnyi, V.A. 180 (1997) 34 transition of temperature distribution at Verheijen, M.A., see van den Berg, E.P.G. 180 (19972)8 4 180 (19974)8 7 Czochralski silicon melt surface Villeval, P., see Rejmankova, P. 180 (1997) 85 Tanaka, T. and H. Takei, Growth of MgSiO; Virbulis, J., see Miihlbauer, A. 180 (19973)7 2 orthoenstatite single crystals by the top- Vital, R.L., see Zaitseva, N.P. 180 (19972)5 5 seeded solution growth (TSSG) method 180 (1997) 206 Von Ammon, W., see Dornberger, E. 180 (19973)4 3 Author index 719 180 (19975)7 8 Wagner, P., see Dornberger, E. 180 (19973)4 3 Yuferev, V.S., see Kolesnikova, E.N. 180 (19976)6 0 Wagner, P., see Vanhellemont, J. 180 (19973)5 3 Yuferev, V.S., see Bergunde, T. 180 (19971)9 8 Walker, J.S., see Ma, N. 180 (19974)0 1 Yun, W.S., see Kim, S.H. Wang, C.H., see Sze, P.W. 180 (19971)7 7 Wang, G.-X., see Zou, Y.F. 180 (19975)2 4 Zaccaro, J., B. Capelle and A. Ibanez, Crystal Wang Jian, see Chen Zhiwen 180 (19972)8 0 growth of hybrid nonlinear optical mater- Wang, N.F., see Sze, P.W. 180 (19971)7 7 ials: 2-amino-5-nitropyridinium dihyd- Wang Xiaoliang, Sun Dianzhao, Kong Mei- rogenphosphate and dihydrogenarsenate 180 (1997) 229 ying, Hou Xun and Zeng Yiping, Study of Zaitseva, N.P., J.J. De Yoreo, M.R. Dehaven, GSMBE growth and characteristics of R.L. Vital, K.E. Montgomery, M. Richar- high-quality strained Ing 63;Gao.37As/InP dson and L.J. Atherton, Rapid growth of 180 (19972)5 5 quantum wells 180 (1997) 22 large-scale (40-55 cm) KH,PO, crystals 180 (1997) 22 Wang, Y.H., see Sze, P.W. 180 (1997) 177 Zeng Yiping, see Wang Xiaoliang 180 (19975)2 4 Watanabe, I., see Tsuji, M. 180 (1997) 9 Zhang, H., see Zou, Y.F. 180 (19975)3 4 Weimann, H., J. Amon, Th. Jung and G. Miil- Zhang, H., see Chui, W.K. 180 (19972)8 0 ler, Numerical simulation of the growth of Zhang Shuyuan, see Chen Zhiwen 180 (19972)8 0 2” diameter GaAs crystals by the vertical Zhang Yuheng, see Chen Zhiwen gradient freeze technique 180 (1997) 560 Zheng, L.L. and D.J. Larson, Jr., Thermoelec- Wertz, V., see Olivari, E. 180 (1997) 627 tric effects on interface demarcation and Wunderwald, U., see Barz, R.U. 180 (1997) 410 directional solidification of bismuth 180 (1997) 293 Zhmakin, A.I., see Kolesnikova, E.N. 180 (1997) 578 Yamagishi, H., see Takano, K. 180 (1997) 363 Zhou, Y. and J.J. Derby, Three-dimensional Yoon, S.F., X.B. Li and M.Y Kong, Some computations of solution hydrodynamics properties of gallium nitride films grown during the growth of potassium dihydro- on (0 00 1) oriented sapphire substrates by gen phosphate. I. Spin up and steady rota- gas source molecular beam epitaxy 180 (1997) 27 tion 180 (1997) 497 Yuferev, V.S. and M.G. Vasil’ev, New Zou, Y.F., G.-X. Wang, H. Zhang, V. Prasad approach to simulation of radiative-con- and D.F. Bliss, Macro-segregation, dy- ductive heat transfer in semi-transparent namics of interface and stresses in high 180 (19975)2 4 crystals being pulled from a melt 180 (1997) 551 pressure LEC grown crystals SS JOURNAL OF CRYSTAL = — GROWTH 4 ELSEVIER Journal of Crystal Growth 180 (1997) 720-721 Subject index Apparatus — reactive ion 1 — for dynamic vertical gradient freeze 127 Eutectic growth — of faceted lamellar structures 315 Characterization — by various methods Hydrodynamics, see Convection — — of silicon melt 323 Computer simulation Kinetics of composition profile 40 of different faces of germanium oxide 212 of Czochralski growth 157, 450, 461, 534, 627 of doping 167 of dopant concentration in silicon 343, 372, 381 of growth 113, 136, 212, 238, 284, 334, 604, 680 of global model of liquid encapsulated Czochralski 517, 524 — of interface control 280, 680 of interface demarcation 293 of nucleation 61, 113, 136, 238, 255, 274 of liquid encapsulated Czochralski melt flows of indium phosphide 510 Lasers, see Device characterization of melt convection 442 Lasers, crystals for of metalorganic vapor phase epitaxy of III-V — chromium-doped YAG 81 compounds 660 — harmonic generation 255 of silicon melt flow 487 — lithium niobate 94, 101 of software for modeling 698 — nonlinear optics 229 of thermocapillary convection 660 — rare-earth titanium niobate 73 of time dependent Czochralski 468 of void nucleation 353 Melt growth technique Constitutional supercooling by Bridgman-Stockbarger method — of benzil 127 — of bismuth 293 Convection 127, 157, 372, 381, 410, 433, 442, 450, 477, 487, — theory 497, 517, 524, 566, 578, 587, 597, 638, 648 — — of buoyancy driven convection 422, 433 — — of dopant transport in strong magnetic field 401 Device characterization by Czochralski method — electronic materials 40 — of gallium arsenide 517 — lasers 1 - — of indium phosphide 510 — quantum wells 22 — of rare-earth titanium niobate 73 — with saw tooth bandgap 9 — of silicon 334, 343, 353, 363, 442, 450, 461, 477 Diffusional control — theory — of Coriolis convection 578 — — of flow mode transitions 305 Dissolution — — of global simulation 517, 524 — of surfaces 263, 274 - — — of internal radiation 157, 551 by floating zone method Electronic materials, see Device characterization — of bismuth germanate 105 Epitaxy, see Thin film growth — of chromium-doped YAG 81 Etching — theory of vibrations controlling growth 648 — chemical 40 by horizontal Bridgman 587 Subject index by vertical gradient freeze method 127, 560 — by ultracentrifugation by zone melting ~ — of proteins 113 of silicon 372, 381 Statistical mechanics, molecular theory — theory — of surface angle transition 136 — — of dopant distribution 94 Stefan problem or moving boundary problem — of shaped crystal growth 615 — of horizontal Bridgman 587 Microgravity, growth under — of melt 388 — of bismuth germanate 105 Superlattices, multilayers — theory of Coriolis forces 578 — of silicon/silicon carbon 185 — vibrations 648 — of III-V compounds 22 Morphological stability Surface energy, determination — of germanium oxide 212 — of angle transition 136 Surface structure Nucleation — of etched surfaces 263 — of carbon-rich aggregates 185 — of silicon (211) 54 — of diamond 198 — of grown-in defects in silicon 334, 353, 363 Thin film growth — of vacancy clusters 61 — by atomic layer molecular beam epitaxy Numbers — of aluminum phosphide 15 Bond 615 — by gas source molecular beam epitaxy Damkohler 113 — of gallium nitride 27 Grashof 157, 388, 433, 450, 477, 524, 534, 543, 578, 638 by hot wall epitaxy Hartman 401, 433, 477 — of zinc telluride 47 Marangoni 534 by liquid phase epitaxy Peclet 401, 578 — of indium gallium arsenide antimonide 34 Prandtl 388 by molecular beam epitaxy Rayleigh 305, 477, 597 — of indium phosphide 22 Reynolds 450, 497, 638 — of zinc selenide 40 Schmidt 597 — of zinc sulphide selenide 40 Taylor 388, 410 by vapor phase epitaxy — through chemical vapor deposition Phase diagram — theory of growth 670, 680 — of carbontetrabromide—hexachloroethane 315 through metalorganic chemical vapor deposition — of rare-earth titanium niobate 73 — of cadmium zinc telluride 177 of copper 691 Quantum wells, see Device characterization of indium gallium aluminum arsenide 9 of indium phosphide 1 Solution growth technique of silicon/silicon carbon 185 — by chemical liquid homogeneous precipitation of strontium barium niobate 220 — — of gamma-manganate 280 - of yttria 680 — by flux method of zinc selenide 167 — — of potassium titanyl 85 of zirconia 680 by low temperature method theory of growth 660 — of germanium oxide 212 through metalorganic chemical vapor deposition, — of L-arginine phosphate monohydrate 263, 274 photo-assisted — of monomethylhydrazin 238, 248 — — of zinc selenide 167 — of potassium dihydrogen phosphate 255, 497 — through plasma-enhanced chemical vapor deposition 198 - — of 2-amino-5-nitropyridinium dihydrogenphosphate and dihydrogenarsenate 229 Vapor growth technique — by top seeded solution growth — by chemical transport — — of magnesium silicate (ortoenstatite) 206 — — of epsilon-caprolactam 284 — by traveling heater method Vapor-—liquid-solid growth — — of cadmium telluride 566 — of germanium oxide 212