+» CRYSTAL GROWTH ELSEVIER Journal of Crystal Growth 137 (1994) 681-687 Author index Abousahl, S., C. Loos-Neskovic and M. Fe Bednorz, J.G., see Schlom 137 (1994) 259 doroff, Mechanism of the preparation of Benz, K.W., see Croll 137 (1994) 95 insoluble compounds by local growth in Benz Il, R.G., see Maruyama 137 (1994) 435 aqueous solution 137 (1994) 569 Berglund, K.A., see Dunuwila 137 (1994) 561 Adamski, J.A., see Bliss 137 (1994) 145 Beske, S.A., Y. Arikawa, R.N. Andrews and Aggarwal, M.D., W.S. Wang, J. Choi, J.¢ W. Lundblad, Chemical compatibility Cochrane and Z.Y. Wang, Morphology studies of GaAs and CdZnTe with the and formation of the color core of alloys WC-103 and TZM 137 (1994) 102 Bi,,SiO.) crystals grown by the Czoch Bhihe, C.K., P.A. Mataga, J.W. Hutchinson, ralski method 137 (1994) 132 S. Rajendran and J.P. Kalejs, Residual Akasaki, I., see Detchprohm 137 (1994) 170 Stresses in crystal growth 137 (1994) 86 Aldinger, Ff , see Seher 137 (19944)5 2 Biao, Y., see George 137 (19942)9 9 Alex, V., see Uecher 137 (19942)7 8 Biefeld, R.M., K.C. Baucom and S.R. Kurtz, Anbukumar, S see Ravi 137 (1994) 598 The growth of InAs,_,Sb,/InAs Andreeta, J.P., see Prokofiev 137 (19945)2 8 strained-layer superlattices by metalor- Andreeta, M.R.B., see Prokofiev 137 (1994) 528 ganic chemical vapor deposition 137 (1994) 231 Andrews, R.N see Beske 137 (1994) 102 Bierlein, J.D., see Cheng 137 (1994) 107 Andrews, R.N., see Price 137 (19942)0 1 Bill, J., see Seher 137 (1994) 452 Angert, N., L. Kaplun, M. Tseitlin, | Bliss, D.F., M. Harris, J Horrigan, W.M Yashchin and M. Roth, Growth and do Higgins, A.F Armington and J.A main structure of potassium titanyl phos Adamski, Synthesis and growth processes phate crystals pulled from high-tempera for zinc germanium diphosphide 137 (1994) 145 ture solutions 137 (1994) 116 Bocchi, C., C. Ferrari, P. Franzosi, A. Bosac- Anselmetti, D., see Schlom 137 (19942)5 9 chi and S. Franchi, Accurate determina- Anzai, Y , see Shigematsu 137 (19945)0 9 tion of lattice mismatch in the epitaxial Arai, Y , see Ono 137 (1994) 427 AlAs/GaAs system by high-resolution Arends, J., see Christoffersen 137 (19945)4 5 X-ray diffraction (E) 137 (19946)8 0 Arikawa, Y., see Beske 137 (19941)0 2 Bornside, D.E., see Zhou 137 (1994) 26 Armington, A.F., see Harris 137 (19941)2 8 Borshchevsky, A. and J.-P. Fleurial, Ru,Ge, Armington, A.F., see Bliss 137 (19941)4 5 crystal growth and some properties 137 (19942)8 3 Ataka, M., see Niimura 137 (19946)7 1 Bosacchi, A., see Bocchi 137 (1994) 680 Azoulay, M., M. Sinvani, M. Mizrachi and Bourkiza, M., see Nacer 137 (1994) 91 H. Feldstein, Stripe structure CdTe Brandt, C.D., see Hobgood 137 (1994) 181 CdZnTe—CdTe in a bulk single crystal 137 (1994) 208 Brandt, G.B., see Singh 137 (1994) 155 Azoulay, M., see George 137 (1994) 299 Brown, R.A., D. Maroudas and T. Sinno, Modelling point defect dynamics in the crystal growth of silicon 137 (1994) 12 Balakrishnan, K. and P. Ramasamy, Study of Brown, R.A., see Zhou 137 (1994) 26 anomalous electrical behaviour of molyb Brush, L.N., G.B. McFadden and S.R denum ditelluride single crystals 137 (1994) 309 Coriell, The effect of crystalline aniso- Barnett, S.A., see Choi 137 (19943)8 1 tropy on pattern formation in _laser- Barrett, D.L., see Hobgood 137 (1994) 181 melted thin silicon films 137 (1994) 355 Batra, A.K., see Zhang 137 (1994) 141 Bucher, E , see Oglesby 137 (1994) 289 Baucom, K.C., see Biefeld 137 (19942)3 1 Burger, A., see George 137 (1994) 299 Bauser, E., see Weishart 137 (1994) 335 Burk, A.A., see Hobgood 137 (1994) 181 682 Author index Journal of Crystal Growth 137 (1994) 681-687 Carroll Il, L.B., see Dunuwila 137 (1994) 561 Di Marzio, D., see Casagrande 137 (1994) 195 Carvalho, J.F., see Prokofiev 137 (1994) 528 Doerschel, J., see Uecher 137 (19942)7 8 Casagrande, L.G., D.J. Larson, Jr.. D. Di Dold, P., see Créll 137 (1994) 95 Marzio, J. Wu and M. Dudley, The Dudley, M., see Casagrande 137 (1994) 195 growth and comparison of large-diameter Dunuwila, D.D., L.B. Carroll Il and K.A. vertical Bridgman CdZnTe and CdTe 137 (1994) 195 Berglund, An investigation of the appli- Chait, A., see Korpela 137 (1994) 623 cability of attenuated total reflection in- Chang, C.-M., see Lin 137 (1994) 400 frared spectroscopy for measurement of Charles, J.B., see Dhas 137 (1994) 295 solubility and supersaturation of aqueous Chen, C.P., see Kou 137 (1994) 663 citric acid solutions 137 (19945)6 1 Cheng, L.K., L.T. Cheng, J. Galperin, P.A Morris Hotsenpiller and J.D. Bierlein, Crystal growth and characterization of Eidenzon, A.M., see Puzanov 137 (1994) 642 KTiOPO, isomorphs from the self-fluxes 137 (19941)0 7 Elban, W.L., D.B. Sheen and J.N. Sher- wood, Vickers hardness testing of su- Cheng, L.T., see Cheng 137 (19941)0 7 crose single crystals 137 (1994) 304 Chiang, J.D., see Li 137 (1994) 421 Erb, A., T. Traulsen and G. Miiller-Vogt, Chien, F.-R., S.R. Nutt, W.S. Yoo, T. Ki- moto and H. Matsunami, Interface struc- YBa,Cu,0,_,;—-BaCuO,-—CuO: investi- gations on the phase diagram and growth tures of epitaxial B-SiC on a-SiC sub Strates 137 (1994) 175 of single crystals. II 137 (1994) 487 Choi, C.-H. and S.A. Barnett, Morphology Ernst, F , see Roos 137 (1994) 457 and crystalline perfection of InAs films on Si(100) 137 (1994) 381 Falini, G., M. Gazzano and A. Ripamonti, Choi, J., see Aggarwal 137 (1994) 132 Crystallization of calcium carbonate in Choyke, W.J., see Hobgood 137 (1994) 181 presence of magnesium and polyelec Christoffersen, J.. M.R. Christoffersen, J trolytes 137 (19945)7 7 Arends and M. H66k, Effects of alu- Favier, J.J., see Sixou 137 (1994) 605 minium(III) and fluoride on the deminer- Fedoroff, M., see Abousahl 137 (19945)6 9 alization of bovine enamel powder and Feigelson, R.S., see Helbing 137 (1994) 150 hydroxyapatite; in vitro kinetic studies Feldstein, H., see Azoulay 137 (19942)0 8 showing synergistic inhibition 137 (19945)4 5 Ferrari, C., see Bocchi 137 (19946)8 0 Christoffersen, M.R., see Christoffersen 137 (19945)4 5 Fleurial, J.-P., see Borschchevsky 137 (19942)8 3 Clarke, R.C., see Hobgood 137 (19941)8 1 Foster, D.F., see Hoare 137 (19943)4 7 Cochrane, J.C., see Aggarwal 137 (19941)3 2 Fradkov, V.E., see Glicksman 137(1994) 1 Cole-Hamilton, D.J., see Hoare 137 (19943)4 7 Franchi, S., see Bocchi 137 (19946)8 0 Collins, W.E., see George 137 (19942)9 9 Franzosi, P., see Bocchi 137 (19946)8 0 Conte-Matos, A.., see Maruyama 137 (19944)3 5 Fripp, A., see Rosch 137 (1994) 54 Coquerel, G., see Petit 137 (19945)8 5 Fujiwara, S., see Takahashi 137 (19942)4 0 Coriell, $.R., see Brush 137 (19943)5 5 Fukuda, T., see Machida 137 (1994) 82 Cormier, J.E., see Harris 137 (1994) 128 Fukuda, T., see Machida 137 (19945)1 6 Croll, A., P. Dold and K.W. Benz, Segrega- tion in Si floating-zone crystals grown under microgravity and in a magnetic Gaines, J.M In-situ characterization of I1/VI molecular beam epitaxy growth us- field 137 (1994) 95 ing reflection high-energy electron dif- Davis, R.F Deposition and characterization fraction oscillations 137 (1994) 187 of diamond, silicon carbide and gallium Galperin, J., see Cheng 137 (19941)0 7 nitride thin films 137 (19941)6 1 Gazzano, M., see Falini 137 (1994) 577 De Lima, C.J., see Prokofiev 137 (19945)2 8 Ge, P., see Xu 137 (19945)3 8 Debnam, W., see Rosch 137 (1994) 54 George, M.A., M. Azoulay, H.N. Jayatirtha, Detchprohm, T., K. Hiramatsu, N. Sawaki Y. Biao, A. Burger, W.E. Collins and E and I. Akasaki, The homoepitaxy of GaN Silberman, Atomic force microscopy of by metalorganic vapor phase epitaxy us- lead iodide crystal surfaces 137 (19942)9 9 ing GaN substrates 137 (1994) 170 Gerber, Ch., see Schlom 137 (19942)5 9 Dhanasekaran, R., see Gopalakrishnan 137 (1994) 235 Gillen, G., see Kaiser 137 (1994) 136 Dhas, R.C., J.B. Charles and F.D. Gnanam, Glicksman, M.E., M.B. Koss, V.E. Fradkov, Growth and microhardness studies on M.E. Rettenmayr and S.S. Mani, Quan- NH,Sb,Fio single crystals 137 (1994) 295 tification of crystal morphology 137 (1994) duthor index Journal of Crystal Growth 137 (1994) 681-687 Glicksman, M.E , see Singh 137 (1994) 1 lijima, M., Y. Moriwaki and Y. Kuboki, In Glidewell, (¢ , S&e Hoare 137 (1994) 347 vitro crystal growth of oxtacalcium phos- Gnanam, F.D., see Dhas 137 (1994) 295 phate on type I collagen fiber 137 (1994) Gnezdilov, V.P., see Webb 137 (1994) 405 Ishihara, T., K. Murata, M. Sato, N. Kito Gopalakrishnan, N., R. Dhanasekaran and and M. Hirano, New horizontal boat P. Ramasamy, Investigations on the two growth method of undoped semi-insulat dimensional nucleation and growth kinet ing GaAs with low dislocation density 137 (1994) 375 ics of InP vapour phase epitaxy 137 (1994) 235 Ito, T., see Oka 137 (19944)7 9 Gottlieb, M., see Singh 137 (1994) 155 Greggi, J., see Hobgood 137 (1994) 181 Jaaskelainen, T., see Prokofiev 137 (1994) 528 Gruehn, R., see Lenz 137 (1994) 499 Jayaraman, D., see Kumar 137 (19945)3 5 Gu, G.D., K. Takamuka, N. Koshizuka and Jayatirtha, H.N., see George 137 (19942)9 9 S. Tanaka, Growth and superconductivity Jayavel, R., A. Thamizhavel, P. Muru of Bi, Sr, «Ca, (Cu,_,Fe,),O, single gakoothan, C.R. Venkateswara Rao, ( crystal 137 (1994) Subramanian and P. Ramasamy, Growth of large size twin free YBa,Cu.O, single crystals by a temperature gradient Han, T.S., see Oka 137 (1994) technique 137 (1994) 2 Hannan, M., see Pandey 37 (1994) 2 Jerman, Z., see Rieger 137 (1994) Hanssen, L.M., see Snail 137 (1994) 676 Ji, Y., J. Liang and S. Xie, Phase relations in Harris, M., J. Larkin, J.E. Cormier and A.F the system BaO-Nd,O,-B,0O, (B,O, Armington, Optical studies of Czochral 50 mol%) and crystal growth of Nd ski and hydrothermal bismuth silicate 137 (1994) 128 BaB,O,, 137 (1994) Harris, M see Bliss 137 (1994) 145 Jordan, A.S. and A. Robertson, Copyrolysis Hartman, P., see Petit 137 (1994) 585 of AsH,, and PH, in the epitaxial growth Hashimoto, A., see Yamamoto 137 (1994) 415 of ternary and quaternary III—V alloys 137 (19942)2 4 Heberlein, J., see Snail 137 (19946)7 6 Jou, M.-J see Lin 137 (19944)0 0 Helbing, R. and R.S. Feigelson, Growth of SrS_ single crystals by physical vapor Kaiser, D.I M.D. Vaudin, G. Gillen, C.-S transport 137 (1994) Hwang, L.H. Robins and L.D. Rotter, Hernandes, A.C., see Prokofiev 137 (1994) 52 Growth and characterization of barium Higgins, W.M see Bliss 137 (1994) titanate thin films prepared by metalor Hiramatsu, K., see Detchprohm 137 (1994) ganic chemical vapor deposition 137 (1994) 136 Hirano, M., see Ishibara 137 (1994) Kakibayashi, K., see Okuno 137 (1994) 313 Hoare, R.D., M.E. Pemble, I.M. Povey, J.O Kalejs, J.P., see Bhihe 137(1994) 86 Williams, D.F. Foster, ¢ Glidewell and Kameyama, T., see Onuma 137 (1994) 610 D.J. Cole-Hamilton, The use of hex-5-en Kamshilin, A.A., see Prokofiev 137 (19945)2 8 ylarsine as a chemically designed precur Kaplun, L., see Angert 137 (1994) 116 sor to probe the mechanisms of the met Katsura, T see Niimura 137 (19946)7 1 alorganic vapour phase epitaxy growth of Kawano, T see Okuno 137 (1994) 313 gallium arsenide; consequences for reac Kida, M see Ono 137 (1994) tor design 137 (1994) Kimoto, T see Chien 137 (1994) Hobgood, H.M., D.L. Barrett, J.P. McHugh Kimura, S$ see Shigematsu 137 (1994) R.C. Clarke, S. Sriram, A.A. Burk, J Kingetsu, T and K. Sakai, Seeded epitaxial Greggi, C.D. Brandt, R.H. Hopkins and growth of close-packed metal films and W.J. Choyke, Large diameter 6H-SiC for their superlattices on silicon substrates 137 (1994) 635 microwave device applications 137 (19941)8 1 Kito, N see Ishibara 137 (1994) 375 Hohl, H., see Oglesby 137 (1994) 289 Kloc, C., see Oglesby 137 (1994) 289 Holmes, K., see Rajendran 137 (1994) 77 Koai, K., A. Seidl, H.-J. Leister, G. Miller H66k, M., see Christoffersen 137 (19945)4 5 and A. Kohler, Modellingo f thermal fluid Hopkins, R.H., see Hobgood 137 (19941)8 1 flow in the liquid encapsulated Czochral Horrigan, J., see Bliss 137 (1994) 145 ski process and comparison with experi Hoshikawa, K., see Machida 137 (1994) 82 ments 137 (1994) 41 Hoshikawa, K., see Machida 137 (19945)1 6 Koai, K., K. Sonnenberg and H. Wenzl, In- Huo, C., see Xu 137 (19945)3 8 fluence of crucible support and radial Hutchinson, J.W., see Bhihe 137 (1994) 86 heating on the interface shape during Hwang, C.-S., see Kaiser 137 (19941)3 6 vertical Bridgman GaAs growth 137 (1994) 59 684 Author index Journal of Crystal Growth 137 (1994) 681-687 Kobayashi, T., see Oshima 137 (1994) 48 Machida, H., K. Hoshikawa and T. Fukuda, Koguchi, M., see Okuno 137 (1994) 313 Growth of TiO, single crystals using the Kohler, A., see Koai 137 (1994) 41 edge-defined, film-fed growth technique 137 (1994) 516 Kohno, K., see Takahashi 137 (1994) 240 Magnea, N., see ROssner 137 (1994) 393 Konuma, M., see Weishart 137 (1994) 335 Majewski, J.A. and D.H. Matthiesen, Quan- Korpela, S.A., A. Chait and D.H. Mat titative infrared imaging for the measure- thiesen, Lateral or radial segregation in ment of dopant distribution in gallium solidification of binary alloy with a curved arsenide 137 (1994) 249 liquid—solid interface 137 (1994) 623 Mani, S.S., see Glicksman 137(1994) 1 Koshizuka, N., see Gu 137 (1994) 472 Mannhart, J., see Schlom 137 (1994) 259 Koss, M.B., see Glicksman 137(1994) 1 Maroudas, D., see Brown 137 (1994) 12 Kou, S., see Tao 137 (1994) 72 Maruyama, K., R.G. Benz Il, A. Conte- Kou, S., and C.P. Chen, Modified floating- Matos, B.K. Wagner and C.J. Summers, zone growth of organic single crystals 137 (1994) 663 Gas source doping of molecular beam Kuboki, Y , see lijima 137 (1994) 553 epitaxially grown CdTe using arsine 137 (19944)3 5 Kumar, F.J., D. Jayaraman, C. Subramanian Mataga, P.A., see Bhihe 137 (1994) 86 and P. Ramasamy, Nucleation kinetic Matsunami, H., see Chien 137 (19941)7 5 study of KTiOPO, crystallizing from high Matthiesen, D.H., see Majewski 137 (19942)4 9 temperature solution 137 (1994) 535 Matthiesen, D.H., The total pressure of ar- Kurita, S., see Takahashi 137 (19942)4 0 senic over molten gallium arsenide at Kurtz, S.R., see Biefeld 137 (1994) 231 1260°C 137 (19942)5 5 Matthiesen, D.H., see Korpela 137 (19946)2 3 Lal, R.B., see Zhang 137 (1994) 141 Mazelsky, R., see Singh 137 (19941)5 5 Larkin, J., see Harris 137 (19941)2 8 McCord, G., see Seidl 137 (19943)2 6 Larson, Jr., D.J., see Casagrande 137 (1994) 195 McFadden, G.B., see Brush 137 (19943)5 5 Laugier, J., see Réssner 137 (1994) 393 McHugh, J.P., see Hobgood 137 (19941)8 1 Lawson, C.M. and R.R. Michael, Fiber optic Menken, M.J.V., see Oka 137 (19944)7 9 low-coherence interferometry for non-in- Menna, A., see Rajendran 137 (1994) 77 vasive silicon wafer characterization 137 (1994) 37 Menovsky, A.A., see Oka 137 (1994) 479 Lee, B.-J., see Lin 137 (1994) 400 Michael, R.R., see Lawson 137 (1994) 37 Lehoczky, S.L.., see Price 137 (1994) 201 Minezaki, Y., see Niimura 137 (19946)7 1 Leister, H.-J., see Koai 137 (1994) 41 Mizrachi, M., see Azoulay 137 (19942)0 8 Leister, H.-J., see Seidl 137 (1994) 326 Moe, A.M., see Oka 137 (19944)7 9 Lenz, M. and R. Gruehn, Chemical vapour Moriwaki, Y., see lijima 137 (19945)5 3 transport of tungsten dioxide using HgBr, Morris Hotsenpiller, P.A., see Cheng 137 (19941)0 7 as transport agent; experiments and ther- Mukai, K., M. Sugawara and S. Yamazaki, mochemical calculations 137 (19944)9 9 Enhancement of thermal stability in I.W., J.D. Chiang, Y.K. Su and M Ing 53;Gay 47As/InP quantum wells 137 (1994) 388 Yokoyama, The preparation of ZnS thin Miller, G., see Koai 137 (1994) 41 films on an indium tin oxide /glass sub- Miiller, G.., see Ostrogorsky 137 (1994) 64 strate by low-pressure metalorganic Miller, G., see Seidl 137 (19943)2 6 chemical vapor deposition 137 (19944)2 1 Miiller-Vogt, G., see Erb 137 (1994) 487 Liang, J., see Ji 137 (19945)2 1 Murata, K., see Ishibara 137 (19943)7 5 Lin, J.-F., M.-C. Wu, M.-J. Jou, C.-M. Chang Murugakoothan, P., see Jayavel 137 (19942)7 3 and B.-J. Lee, AlGalnP/GalnP double- Nacer, A. and M. Bourkiza, Diffusion coeffi- heterostructure orange light-emitting cients in solid systems 137 (1994) 91 diodes on GaAsP substrates prepared by Nakajima, K., Stress calculation based on metalorganic vapor-phase epitaxy 137 (1994) 400 three-dimensional deformation of In Lockwood, D.J., see Webb 137 (1994) 405 GaAs /GaAs heterostructure with a Loos-Neskovic, C., see Abousahl 137 (1994) 569 graded layer 137 (1994) 667 Lu, Z.P., see Snail 137 (1994) 676 Nakamura, K., see Okuno 137 (1994) 313 Lundblad, W.., see Beske 137 (1994) 102 Niimura, N., Y. Minezaki, M. Ataka and T Katsura, Small angle neutron scattering Machida, H., K. Hoshikawa and T. Fukuda, from lysozyme in unsaturated solutions, Spiral growth of rutile single crystal to characterize the pre-crystallization boules in the edge-defined film-fed process 137 (19946)7 1 growth process 137 (1994) 82 Nutt, S.R., see Chien 137 (1994) 175 Author index Journal of Crystal Growth 137 (1994) 681-687 Oglebsy, C.S., E. Bucher, C. Kloc and H Prokofiev, V.V., J.P. Andreeta, C.J. de Lima, Hohl, Growth of faceted niobium dise M.R.B. Andreeta, A.C. Hernandes, J.F lenide 137 (1994) 289 Carvalho, A.A. Kamshilin and T. Jaaske Ohashi, Y., see Oka 137 (19944)7 9 lainen, Growth of single-crystal photore- Ohkubo, M., see Yamamoto 137 (19944)1 5 fractive fibers of Bi,,SiO,) and Bi,,TiO,, Oka, K., M.J.V. Menken, Z. Tarnawski, A.A by the laser-heated pedestal growth Menovsky, A.M. Moe, T.S. Han, H. Uno method 137 (19945)2 8 ki, T. Ito and Y Ohashi, Crystal growth Puzanov, N.I. and A.M. Eidenzon, Forma- of La, ,>r, CuO, by the travelling tion of the bands of anomalous oxygen solvent floating-zone method 137 (1994) 479 precipitation in Czochralski-grown Si Okuno, Y., T. Kawano, M. Koguchi, K crystals 137 (19946)4 2 Nakamura and K. Kakibayashi, Disloca tion reduction in InP layers grown on Queisser, H.-J., see Weishart 137 (1994) 335 sawtooth-patterned GaAs substrates 137 (1994) Raina, K.K., see Pandey 137 (19942)6 8 Omote, K., see Shigematsu 137 (1994) Rajendran, S., K. Holmes and A. Menna, Ono, N., M. Kida, Y. Arai and K. Sahira, A Three-dimensional magnetic induction numerical study on oxygen transport in model of an octagonal edge-defined film- silicon melt in a double-crucible method 137 (1994) fed growth system 137 (1994) 77 Onuma, K., T Kameyama and K Tsuka Rajendran, S., see Bhihe 137 (1994) 86 moto, In situ study of surface phenomena Ramasamy, see Gopalakrishnan 137 (19942)3 5 by real time phase shift interferometry 137 (19946)1 0 Ramasamy see Jayavel 137 (19942)7 3 Oshima, M., N. Taniguchi and T. Kobayashi Ramasamy, P., see Balakrishnan 137 (19943)0 9 Numerical investigation of three-dimen Ramasamy, P., see Kumar 137 (19945)3 5 sional melt convection with the magnetic Ramasamy, P., see Ravi 137 (1994) 598 Czochralski method 137 (1994) Ravi, G., K. Srinivasan, S. Anbukumar and Ostrogorsky, A.G. and G. Miller, Normal P. Ramasamy, Growth and characteriza- and zone solidification using the sub tion of sulphate mixed L-arginine phos- merged heater method 137 (1994) phate and ammonium dihydrogen phos- phate /potassium dihydrogen phosphate mixed crystals 137 (19945)9 8 Reiche, P., see Uecker 137 (19942)7 8 Pandey, R.K., M. Hannan and K.K. Raina Rettenmayr, M.E , see Glicksman 137(1994) 1 Single crystal growth of Bi,CaSr Riedel, R., see Seher 137 (19944)5 2 Cu,O,,, superconductor by traveling Rieger, A., Z. Jerman and O. Séhnel, A new zone method 137 (1994) crystal modification of MgSO, -3H,O 137 (19945)9 5 Park, Y., M. Skowronski and T.M. Rosseel, Ripamonti, A see Falini 137 (19945)7 7 Incorporation of aluminum and oxygen Robertson, A.., see Jordan 137 (1994) 224 in dimethylaluminum methoxide doped Robins, L.H., see Kaiser 137 (1994) 136 GaAs during organometallic vapor phase Roos, B. and F Ernst, Thermal-stress-in epitaxy 137 (1994) duced dislocations in GeSi/Si het Pemble, M.I , see Hoare 137 (1994) erostructures 137 (19944)5 7 Pendergrass, T.K., see Rosch 137 (1994) Rosch, W., A. Fripp, W. Debnam and T.K Perlov, D. and M. Roth, Isothermal growth Pendergrass, Heat transfer measure of B-barium metaborate single crystals by ments in the Bridgman configuration 137 (1994) 54 continuous feeding in the top-seeded so Rosseel, T.M see Park 137 (19944)4 2 lution growth configuration 137 (19941)2 3 Roéssner, U., J Laugier and N. Magnea, Pfender, f , See Snail 137 (1994) 676 Structural characterization of Cd,_. Petit, S., G. Coquerel and P. Hartman, Nu Zn ,Te(001) layers grown by molecular cleation and crystal growth of molecular beam epitaxy on Cdoo,Zno.,Te sub- solvates with several conformations both strates 137 (19943)9 3 in solution and in solid state; application Roth, M., see Angert 137 (1994) 116 to some hydrated copper(II) sulfoxinates 137 (1994) 585 Roth, M., see Perlov 137 (1994) 123 Povey, I.M., see Hoare 137 (1994) 347 Rotter, L.D., see Kaiser 137 (1994) 136 Price, M.W., R.N. Andrews, C.H. Su, S.1 Rouzaud, A., see Sixou 137 (19946)0 5 Lehoczky and F.R. Szofran, The effect of a transverse magnetic field on the mi Sahira, K see Ono 137 (19944)2 7 crostructure of directionally solidified Sakai, K see Kingetsu 137 (19946)3 3 CdTe 137 (1994) 201 Sato, M see Ishibara 137 (1994) 375 686 Author index Journal of Crystal Growth 137 (1994) 681-687 Sawaki, N., see Detchprohm 137 (1994) 170 Tadatomo, K., see Watanabe 137 (19942)4 5 Schalge, R., see Uecher 137 (19942)7 8 Takahashi, N.S., S. Fujiwara, K. Kohno, E Schlom, D.G., D. Anselmetti, J.G. Bednorz, Shibano and S. Kurita, AlGalnP/Al Ch. Gerber and J. Mannhart, Epitaxial GaAs double heterostructure light emit- growth of cuprate superconductors from ting diode grown by liquid phase epitaxy 137 (1994) 240 the gas phase 137 (1994) 259 Takamura, K., see Gu 137 (19944)7 2 Seher, M., J. Bill, F. Aldinger and R. Riedel, Takaoka, H. and H. Suito, Substitution of Crystallization kinetics of polysilazane- Co?* and/or Ti** ions in strontium derived amorphous silicon nitride 137 (1994) 452 hexaferrite grown from SrO-Fe,O, Seidl, A., see Koai 137 (1994) 41 BO, melts 137 (19944)9 3 Seidl, A., G. McCord, G. Miiller and H.-J Tanaka, A., see Watanabe 137 (1994) 245 Leister, Experimental observation and Tanaka, S., see Gu 137 (19944)7 2 numerical simulation of wave patterns in Taniguchi, N., see Oshima 137 (1994) 48 a Czochralski silicon melt 137 (19943)2 6 Tao, Y. and S. Kou, Flow visualization in Sheen, D.B., see Elban 137 (19943)0 4 floating zone crystal growth a video- Sherwood, J.N., see Elban 137 (19943)0 4 tape movie 137 (1994) 72 Shibano, E., see Takahashi 137 (19942)4 0 Tarnawski, Z., see Oka 137 (1994) 479 Shigematsu, K., Y. Anzai, K. Omote and S Thamizhavel, A.., see Jayavel 137 (1994) 273 Kimura, Thermal properties of molten Traulsen, 7 , see Erb 137 (1994) 487 bismuth germanates 137 (19945)0 9 Tseitlin, M., see Angert 137 (1994) 116 Shih, W.-C. and M.-S. Wu, Growth of ZnO Tsujino, M., see Yamamoto 137 (19944)1 5 films on GaAs substrates with a SiO, Tsukamoto, K., see Onuma 137 (19946)1 0 buffer layer by RF planar magnetron sputtering for surface acoustic wave ap- Uecker, R., P. Reiche, V. Alex, J.D oerschel plications 137 (19943)1 9 and R. Schalge, The problem of twinning Silberman, E., see George 137 (19942)9 9 in NdGaO, Czochralski crystals 137 (1994) 278 Singh, N.B., M. Gottlieb, G.B. Brandt, A.M Unoki, H., see Oka 137 (1994) 479 Stewart, R. Mazelsky and M.E. Glicks- man, Growth and characterization of mercurous halide crystals: mercurous Vaudin, M.D., see Kaiser 137 (1994) 136 bromide system 137 (1994) 155 Venkateswara Rao, C.R., see Jayavel 137 (1994) 273 Sinno, T , see Brown 137 (1994) 12 Vives, C., Crystallization of semi-solid mag- Sinvani, M., see Azoulay 137 (1994) 208 nesium alloys and composites in the pres- Sixou, B., A. Rouzaud and J.J. Favier, ence of magnetohydrodynamic shear Growth kinetics in ultra-pure bismuth us- flows 147 (19946)5 3 ing a thermoelectric method for interface temperature measurements 137 (1994) 605 Wagner, B.K., see Maruyama 137 (19944)3 5 Skowronski, M., see Park 137 (1994) 442 Walker, J.S. and M.G. Williams, Centrifugal Snail, K.A., Z.P. Lu, R. Weimer, J. Heber- pumping during Czochralski silicon lein, E. Pfender and L.M. Hanssen, Con- growth with a strong transverse magnetic firmation of {113} facets on diamond field 137 (1994) 32 grown by chemical vapor deposition 137 (1994) 676 Wang, W.S., see Aggarwal 137 (19941)3 2 Sohnel, O., see Reiger 137 (1994) 595 Wang, Z.Y., see Aggarwal 137 (19941)3 2 Sonnenberg, K., see Koai 137 (1994) 59 Watanabe, S., K. Tadatomo, T. Sukegawa Srinivasan, K., see Ravi 137 (1994) 598 and A. Tanaka, The effect of indium—bi- Sriram, S., see Hobgood 137 (1994) 181 smuth solvent on the composition of In Stewart, A.M., see Singh 137 (1994) 155 GaP grown by the “yo-yo” solute feeding Stringfellow, G.B., Fundamentals of thin film method 137 (1994) 245 growth 137 (1994) 212 Webb, J.B., D.J. Lockwood and V.P. Gnez- Su, C.H., see Price 137 (1994) 201 dilov, Magnetron sputter epitaxy and Su, Y.K., see Li 137 (19944)2 1 characterization of InSb/ In,_,Al,Sb Subramanian, C., see Jayavel 137 (1994) 273 strained layer superlattices 137 (1994) 405 Subramanian, C., see Kumar 137 (1994) 535 Weimer, R., see Snail 137 (1994) 676 Sugawara, M., see Mukai 137 (1994) 388 Weishart, H., E. Bauser, M. Konuma and Suito, H., see Takaoka 137 (1994) 493 H.-J. Queisser, Monomolecular steps of Sukegawa, T., see Watanabe 137 (1994) 245 ultra-low density on (100) growth faces of Summers, C.J., see Maruyama 137 (1994) 435 liquid phase epitaxial GaAs 137 (1994) 335 Szofran, F.R., see Price 137 (1994) 201 Wenzl, H., see Koai 137 (1994) 59 Author index Journal of Crystal Growth 137 (1994) 681-687 Williams, J.O., see Hoare 137 (1994) 347 Yamazaki, S., see Mukai 137 (19943)8 8 Williams, M.G., see Walker 137 (1994) 32 Yashchin, E., see Angert 137 (1994) 116 Wu, J., see Casagrande 137 (1994) 195 Yokoyama, M.., see Li 137 (19944)2 1 Wu, M.-S., see Shih 137 (1994) 319 Yoo, W.S see Chien 137 (1994) 175 Wu, M.-¢ see Lin 137 (1994) 400 Xie, S., see Ji 137 (19945)2 1 Zhang, H.W., A.K Batra and R.B. Lal Xu, Z., C. Huo, P. Ge and Z. Zhu, Charac Growth of large methyl-(2,4-dinitro- teristics of crystal growth from solution pheny!)-aminopropanoate : 2-methyl-4- scaling laws 137 (1994) § nitroaniline for nonlinear optical appli- cations 137 (1994) 141 Yamamoto, A., M. Tsujino, M. Ohkubo and Zhou, W., DE Bornside and R.A. Brown, 4. Hashimoto, Nitridation effects of sub Dynamic simulation of Czochralski crys Strate surface on the metalorganic chemi tal growth using an integrated thermal cal vapor deposition growth of InN on Si capillary model 137 (1994) 26 and a-Al.,O, substrates 137 (19944)1 5 Zhu, Z., see Xu 137 (1994) 538 jovenor CRYSTAL GROWTH ELSEVIER Journal of Crystal Growth 137 (1994) 688-692 Subject index Adducts measurement of wafer thickness 37 for gallium arsenide 347 Aragonite 577 Alkali L-arginine phosphate (sulphate) 598 — titanyl arsenate 107 Arsenic titanyl phosphate 107 organic 212, 347 Alloys — binary 623 Barium - of copper 91 borate, meta, B 123 - of gold 91 nitrate 610 — of magnesium-aluminum 653 organic 136 Aluminum titanate 136 — arsenide 680 Benzil 663 gallium indium phosphide 240, 400 Biological mineralization — organic 442 of calcium carbonate 577 Ammonium Bismuth 605 dihydrogen phosphate 598 germanate 509 — triantimony decafluoride 295 silicate 128, 132 Apparatus silicon oxide 528 for melt growth strontium calcium cuprate 268, 472 - by floating zone method titanium oxide 528 - — of organic crystals 663 Bovine by laser heated pedestal growth tooth enamel 545 of bismuth silicon oxide 528 - — of bismuth titanium oxide 528 Cadmium for solution growth telluride 195, 201, 208, 435 - by flux method zinc telluride 102, 195, 393 of alkali titanyl arsenate 107 Calcite 577 - — of alkali titanyl phosphate 107 Calcium — by low temperature method apatite 553 - of organic crystals 141 carbonate 577 by yo-yo solute feeding method hydroxyapatite 545 - — of indium gallium phosphide 245 octa, phosphate 553 for thin film growth Cellular growth by vapor phase epitaxy of magnesium alloy 653 - — — through metalorganic chemical vapor deposition (re- Characterization by search scale) atomic force microscopy of barium titanate 136 of lead iodide 299 — for miscellaneous purposes quantitative IR imaging ~- — growth of organic crystals, by new crystallizer 141 of dopant in gallium arsenide 249 in situ measurement of solubility and supersaturation Citric acid 561 using ATR IR spectroscopy 561 Computer aided image analysis | — — magnetic stirring using electromagnetic rheocaster 653 Computer simulation — — measurement of density and surface tension 509 of dendritic morphology | Subject index Journal of Crystal Growth 137 (1994) 688-692 diffusion coefficients 91 Heat flow control integrated thermal capillary model 26 furnace design of 59 magnetic induction model 77 measurement of 54 oxygen transport in melt 427 of Czochralski method 278 of point defects 12 of EFG growth 82 of stress 667 of LEC process 41 Convection 41, 48, 64, of melt convection 48, 427 Copper Heterojunction, see Device characterization alloy 91 Hydrodynamics, see Convection sulphoxinates 585 Indium Jendritic growth aluminum antimonide 405 of succinonitrile | antimonide 64, 405 vice characterization arsenide 231, 381 diodes 161, 240, 400 arsenide antimonide 231 electroluminescence 150 gallium arsenide 388, 667 electronic materials 155, 161, 181, 208, 249 gallium phosphide 245 electro-optic switches 116 nitride 415 frequency doubler 145 phosphide 224, 235, 313 heterojunc1t61i,o 2n40 , 400 heterostructure 680 Interferometry optical parametric oscillator 145 using fiber optics photorefractive materials 128 for wafer characterization 37 quantum wells 388 second harmonic generation 123 Kinetics surface acoustic wave application 319 of deposition 499 wavelength convector 145 growth 82, 235, 335, 381, 452, 516, 538, 569, 610 Diamond 161, 676 inhibition of dissolution 545 Diffusional control interface control 335, 388 of cadmium telluride 208 nucleation 161, 181, 235, 381, 5 of indium gallium arsenide 388 of segregation 64, 623 Lanthanum of solid systems 91 strontium cuprate 479 Diodes, see Device characterization Lead Dissolution iodide 299 of alloys with semiconductors 102 Lysozyme 671 of calcium hydroxyapatite 545 of potassium titanyl phosphate in polyphosphate fluxes 535 Magnesium alloys 653 Electronic materials, see Device characterization sulphite trihydrate 595 Epitaxy, see Thin film growth Melt growth technique Etching of bismuth 605 chemical 201, 289, 299, 653 by Bridgman—Stockbarger method thermal 208 of cadmium telluride 195 of cadmium zinc telluride 195 Finite element model of gallium arsenide 59, 255, 375 of gallium arsenide 59 theory of 54 of silicon 26 under magnetic field of cadmium telluride 201 Gallium 41, 64 using submerged heater arsenide 59, 102, 224, 249, 255, 335, 347, 442, 667, 680 for steady state growth 64 nitride 161, 170 by Czochralski method organic 170, 212 of bismuth silicate 128, 132 Germanium 64 of gallium 41 silicide 457 of gallium arsenide 255 Gold of neodymium gallate 278 alloys 91 of silicon 12, 26, 32, 326, 427, 642 Subject index /J ournal of Crystal Growth 137 (1994) 688-692 under magnetic field 48 of potassium titanyl phosphate 535 theory 41 of screw dislocations 259 by edge defined film fed growth Numbers of rutile 82, 516 Grashof 48, 72 of silicon 77, 86 Hartmann 32 by floating zone method Marangoni 72, 95 of bismuth strontium calcium cuprate 472 Peclet 623 of lanthanum strontium cuprate 479 Prandtl 538 of organic crystals 663 Rayleigh 538 of silicon 12, 95 Reynolds 72 of sodium nitrate 72 Schmidt 538 by Kyropoulos method Numerical model of zinc germanium diphosphide 145 for investigation of influence of stresses 86 by laser melting of wave patterns in silicon melt 326 of silicon 355 by solidification using reinforcement and magnetic rotation Organic crystals 663 of magnesium alloy 653 by traveling heater method Periodic bond chain theory of bismuth strontium calcium cuprate 268 of copper sulphoxinates, hydrated 585 of lead iodide 299 Phase diagrams by uniaxial solidification of barium oxide /neodymium oxide /boron oxide of binary alloy 623 of magnesium aluminum alloy 653 of cadmium telluride 208 of magnesium sulphite trihydrate 595 of ruthenium sesquigermanide 283 of potassium titanyl arsenate 107 - — theory of 623 of ruthenium /germanium 283 Mercury f yttrium barium copper oxide 487 (1) bromide 155 Phosphorus Metals organic 212 - transition 633 Potassium Methyl-(2,4-dinitrophenyl)-aminopropanoate 141 dihydrogen phosphate 598 2-Methyl-4-nitroaniline 141 titanyl phosphate 107, 116, 535 Microgravity, growth under Precursor of binary alloy 623 for arsenides 212 of gallium arsenide 255 for barium titanate 136 of organic crystals 663 for gallium arsenide 347 of silicon 95 for phosphides 212 Molybdenum for silicon nitride 452 ditelluride 309 kinetics of reaction 212 Morphological stability Purification of materials of spiral growth 82, 516 of silicon carbide 181 of thin film interfaces 355 Quantification of morphology | Neodymium Quantum wells, see Device characterization barium borate 521 gallate 278 Ruthenium Niobium sesquigermanide 283 diselenide 289 Rutile 82, 516 hafnium titanium alloy 102 Nonlinear optics, crystals for Salol 663 alkali titanyl arsenate 107 Silicon 12, 26, 32, 37, 48, 86, 95, 326, 355, 427, 642 - alkali titanyl phosphate 107, carbide 161, 175, 181 B-barium (meta) borate 123 nitride 452 — Organic crystals, mixed 141 organic 400, 452 Nucleation Sodium of indium phosphide 235 nitrate 72 of lysozyme 671 Solution growth technique — of niobium diselenide 289 by flux method