Journal of Crystal Growth 108 (1991) 834-839 North-Holland Author index Abernathy, C.R., S.J. Pearton and N.T. Ha, Sn doping of GaAs and AiGaAs grown Bernussi, A.A., F. likawa, P. Motisuke and P. by metalorganic molecular beam epitaxy 108 (19918)2 7 Basmaji, Properties of Al,Ga,_,As with 108 (19914)5 5 Ackermann, D.K., see Brown an AlAs buffer layer on Si substrates 108 (19914)2 1 Akaishi, M., see Kanda grown by metalorganic vapor phase epi- Allen, S.J., see Bhat 108 (19914)4 1 taxy 108 (1991) 615 Ananth, R. and W.N. Gill, Self-consistent Bhat, R., M.A. Koza, K. Kash, S.J. Allen, theory of dendritic growth with convec- W.P. Hong, S.A. Schwarz, G.K. Chang 108 (19911)7 3 tion and P. Lin, Growth of high quality AlInAs Aoki, Y., S. Hayashi and H. Komatsu, The by low pressure organometallic chemical effect of magnetic field on crystallization vapor deposition for high speed and of y-phase alloy in the Cu-Zn system 108 (19911)2 1 optoelectronic device applications 108 (19914)4 1 108 (19915)3 4 Armitage, D.N., N.I. Dunhill, R.H. West and Bhattacharya, S., see Ghosh J.9. Williams, The thermal decomposition Bischopink, G. and K.W. Benz, Growth of ot copper(II) hexafluoroacetylacetonate Al,Ga,_,Sb bulk material from metallic uns MOCVD conditions 108 (1991) 683 solution 108 (1991) 465 Ashby, S., see Sun 108 (1991) 473 Blackmore, G., see Astles 108 (1991) 549 Astles, M.G., G. Blackmore, O.D. Dosser, H. Bohling, D.A., see Jones 108 (1991) 439 Hill, M. Lyster, G.R. Booker and M. Hill, Bohm, J., see Reiche 108 (1991) 759 Interface abruptness in LPE grown Booker, G.R., see Astles 108 (1991) 549 (CdHg)Te layers on CdTe substrate 108 (19915)4 9 Bornside, D.E., T.A. Kinney and R.A. Brown, Aubry, A., see Skoulika 108 (19912)8 5 Minimization of thermoelastic stresses in Czochralski grown silicon: application of Bacon, D.J., see Meduoye 108 (19916)2 7 the integrated system model 108 (1991) 779 Balk, P., see Glade 108 (19914)4 9 Bosenberg, W.R., R.J. Lane and C.L. Tang, Barilo, S.N., A.P. Ges, S.A. Guretskii, D.I. Growth of large, high-quality beta-barium Zhigunov, A.A. Ignatenko, A.M. Luginets metaborate crystals 108 (19913)9 4 and E.F. Shapovalova, Seeded growth of Béttner, H., see Lambrecht 108 (19913)0 1 rare-earth orthoferrites from B,O,-BaF,— Bouillet, C., see Lefebvre 108 (19916)5 5 BaO solvent. I. Study of conditions and Brown, C.M., D.K. Ackermann, D.L. Purich physico-chemical crystallization parame- and B. Finlayson, Nucleation of calcium ters 108 (1991) 309 oxalate monohydrate; use of turbidity Barilo, S.N., A.P. Ges, S.A. Guretskii, D.I. measurements and computer-assisted sim- Zhiganov, A.A. Ignatenko, A.N. Igument- ulations in characterizing early events in sev, I.D. Lomako and A.M. Luginets, crystal formation 108 (19914)5 5 Seeded growth of rare-earth orthoferrites Brown, R.A., see Maroudas 108 (19913)9 9 from B,O,—BaF,-BaO solvent. II. Growth Brown, R.A., see Bornside 108 (19917)7 9 of high-quality RFeO, single crystals 108 (19913)1 4 Brown, W.E., see Eidelman 108 (19913)8 5 Basmaji, P., see Bernussi 108 (19916)1 5 Brown, W.E., see Tomazic 108 (19916)7 0 Ben-Jacob, E., see Raz 108 (19916)3 7 Buhl, J.-Ch., Hydrothermal synthesis and Bennema, P., see Vogels 108 (19917)3 3 characterization of nitride sodalite single 108 (19918)2 1 Bennema, P., see Wang crystals 108 (1991) 143 108 (19914)6 5 Benz, K.W., see Bischopink Berkowski, M., see Iliev 108 (19912)1 9 Carlson, D.J. and A.F. Witt, Microsegrega- Berkowski, M., K. Iliev, V. Nikolov, P. Peshev tion in conventional Si-doped LEC GaAs 108 (1991) 508 and W. Piekarczyk, Conditions of mainte- Chan, H.-K. and I. Gonda, Studies of the nance of a flat crystal /melt interface dur- mechanism of crystal growth of hexa- ing Czochralski growth of bismuth germa- methylmelamine. II. Rates of growth of nium oxide single crystals 108 (1991) 225 the crystal faces 108 (1991) 751 Journal of Crystal Growth 108 (1991) 834-839 North-Holland Author index Abernathy, C.R., S.J. Pearton and N.T. Ha, Sn doping of GaAs and AiGaAs grown Bernussi, A.A., F. likawa, P. Motisuke and P. by metalorganic molecular beam epitaxy 108 (19918)2 7 Basmaji, Properties of Al,Ga,_,As with 108 (19914)5 5 Ackermann, D.K., see Brown an AlAs buffer layer on Si substrates 108 (19914)2 1 Akaishi, M., see Kanda grown by metalorganic vapor phase epi- Allen, S.J., see Bhat 108 (19914)4 1 taxy 108 (1991) 615 Ananth, R. and W.N. Gill, Self-consistent Bhat, R., M.A. Koza, K. Kash, S.J. Allen, theory of dendritic growth with convec- W.P. Hong, S.A. Schwarz, G.K. Chang 108 (19911)7 3 tion and P. Lin, Growth of high quality AlInAs Aoki, Y., S. Hayashi and H. Komatsu, The by low pressure organometallic chemical effect of magnetic field on crystallization vapor deposition for high speed and of y-phase alloy in the Cu-Zn system 108 (19911)2 1 optoelectronic device applications 108 (19914)4 1 108 (19915)3 4 Armitage, D.N., N.I. Dunhill, R.H. West and Bhattacharya, S., see Ghosh J.9. Williams, The thermal decomposition Bischopink, G. and K.W. Benz, Growth of ot copper(II) hexafluoroacetylacetonate Al,Ga,_,Sb bulk material from metallic uns MOCVD conditions 108 (1991) 683 solution 108 (1991) 465 Ashby, S., see Sun 108 (1991) 473 Blackmore, G., see Astles 108 (1991) 549 Astles, M.G., G. Blackmore, O.D. Dosser, H. Bohling, D.A., see Jones 108 (1991) 439 Hill, M. Lyster, G.R. Booker and M. Hill, Bohm, J., see Reiche 108 (1991) 759 Interface abruptness in LPE grown Booker, G.R., see Astles 108 (1991) 549 (CdHg)Te layers on CdTe substrate 108 (19915)4 9 Bornside, D.E., T.A. Kinney and R.A. Brown, Aubry, A., see Skoulika 108 (19912)8 5 Minimization of thermoelastic stresses in Czochralski grown silicon: application of Bacon, D.J., see Meduoye 108 (19916)2 7 the integrated system model 108 (1991) 779 Balk, P., see Glade 108 (19914)4 9 Bosenberg, W.R., R.J. Lane and C.L. Tang, Barilo, S.N., A.P. Ges, S.A. Guretskii, D.I. Growth of large, high-quality beta-barium Zhigunov, A.A. Ignatenko, A.M. Luginets metaborate crystals 108 (19913)9 4 and E.F. Shapovalova, Seeded growth of Béttner, H., see Lambrecht 108 (19913)0 1 rare-earth orthoferrites from B,O,-BaF,— Bouillet, C., see Lefebvre 108 (19916)5 5 BaO solvent. I. Study of conditions and Brown, C.M., D.K. Ackermann, D.L. Purich physico-chemical crystallization parame- and B. Finlayson, Nucleation of calcium ters 108 (1991) 309 oxalate monohydrate; use of turbidity Barilo, S.N., A.P. Ges, S.A. Guretskii, D.I. measurements and computer-assisted sim- Zhiganov, A.A. Ignatenko, A.N. Igument- ulations in characterizing early events in sev, I.D. Lomako and A.M. Luginets, crystal formation 108 (19914)5 5 Seeded growth of rare-earth orthoferrites Brown, R.A., see Maroudas 108 (19913)9 9 from B,O,—BaF,-BaO solvent. II. Growth Brown, R.A., see Bornside 108 (19917)7 9 of high-quality RFeO, single crystals 108 (19913)1 4 Brown, W.E., see Eidelman 108 (19913)8 5 Basmaji, P., see Bernussi 108 (19916)1 5 Brown, W.E., see Tomazic 108 (19916)7 0 Ben-Jacob, E., see Raz 108 (19916)3 7 Buhl, J.-Ch., Hydrothermal synthesis and Bennema, P., see Vogels 108 (19917)3 3 characterization of nitride sodalite single 108 (19918)2 1 Bennema, P., see Wang crystals 108 (1991) 143 108 (19914)6 5 Benz, K.W., see Bischopink Berkowski, M., see Iliev 108 (19912)1 9 Carlson, D.J. and A.F. Witt, Microsegrega- Berkowski, M., K. Iliev, V. Nikolov, P. Peshev tion in conventional Si-doped LEC GaAs 108 (1991) 508 and W. Piekarczyk, Conditions of mainte- Chan, H.-K. and I. Gonda, Studies of the nance of a flat crystal /melt interface dur- mechanism of crystal growth of hexa- ing Czochralski growth of bismuth germa- methylmelamine. II. Rates of growth of nium oxide single crystals 108 (1991) 225 the crystal faces 108 (1991) 751 Author index 835 Chang, G.K., see Bhat 108 (1991) 441 Gatica, J.E., see Scholtz 108 (1991) 190 Chaudhuri, S., see Ghosh 108 (1991) 534 Ges, A.P., see Barilo 108 (1991) 309 Chen, M.-H., see Shyy 108 (1991) 247 Ges, A.P., see Barilo 108 (1991) 314 Chen, W.H., see Hu 108 (1991) 561 Ghandi, S.K., see Chinoy 108 (1991) 105 Chinoy, P.B. and S.K. Ghandhi, Design con- Ghosh, S., A. Sarkar, S. Bhattacharya, S. siderations for the elimination of recircu- Chaudhuri and A.K. Pal, Microstructure lation in horizontal epitaxial reactors 108 (1991) 105 of ZnO films produced by reactive DC Choe, K.S., J.A. Stefani, T.B. Dettling, J.K. sputtering technique 108 (1991) 534 Tien and J.P. Wallace, Effects of growth Giling, L.J., see Gardeniers 108 (1991) 319 conditions on thermal profiles during Gill, W.N., see Ananth 108 (1991) 173 Czochralski silicon crystal growth 108 (1991) 262 Glade, M., J. Hergeth, D. Griitzmacher, K. Chvoj, Z., see Yuferev 108 (1991) 367 Masseli and P. Balk, Diffusion of Zn Cockayne, B., see Wright 108 (1991) 525 acceptors during MOVPE of InP 108 (1991) 449 Coméra, J., see Thevenard 108 (1991) 572 Gonda I., see Chan 108 (1991) 751 Czekalski, T., see Kowalski 108 (1991) 744 Goto, Y., A. Hayashi, Y. Kimura and M. Nakayama, Second harmonic generation Deng Peizhen, see Zhang 108 (1991) 377 and crystal growth of substituted thienyl 108 (1991) 688 Deparis, C. and J. Massies, Surface stoichi- chalcone 108 (1991) 41 ometry variation associated with GaAs Grabmaier, J.G., see Miihlbauer (001) reconstruction transitions 108 (1991) 157 Grant, M.L. and D.A. Saville, The role of Dettling, T.B., see Choe 108 (1991) 262 transport phenomena in protein crystal Di Persio, J., see Lefebvre 108 (1991) 655 growth 108 (1991) 8 Diers, V., see Miihlbauer 108 (1991) 41 Gruehn, R., see Hussain 108 (1991) 831 108 (1991) 449 Dilawari, A.H. and J. Szekely, A mathemati- Griitzmacher, D., see Glade 108 (1991) 309 cal representation of a modified stagna- Guretskii, S.A., see Barilo 108 (1991) 314 tion flow reactor for MOCVD applica- Guretskii, S.A., see Barilo tions 108 (1991) 491 Djinovié, Z., Z. Djurié, Z. Jaksi¢é, F. Kermendi Ha, N.T., see Abernathy 108 (1991) 827 and R. Rokni¢é, Isothermal vapor phase Hamabe, T., see Kitano 108 (1991) 277 epitaxy of (Hg,Cd)Te from Te-rich Harold, M., see Jones 108 (1991) 73 DjurHi¢g,, Z_.,,T es,e e sDojuirncoev i¢é 110088 ((11999911)) 771100 HHaarrtteml,a n,R .WP..,, sseeee HLeiiajnnge n 110088 ((11999911)) 219209 Dormans, G.J.M., OMCVD of transition Hayashi, A., see Goto 108 (1991) 688 metals and their silicides using metallo- Hayashi, S., see Aoki 108 (1991) 121 cenes and (di)silane or silicon tetra- 108 (1991) 806 Heijnen, W.M.M. and P. Hartman, Structural bromide 108 (1991) 549 morphology of gypsum (CaSO, -2H,0), Dosser, O.D., see Astles 108 (1991) 683 brushite (CaHPO,-2H,O) and _phar- Dunhill, N.I., see Armitage macolite (CaHAsO, - 2H,O) 108 (1991) 290 Henry, C.R. and B. Mutaftschiev, Transient Eidelman, N., W.E. Brown and J.L. Meyer, growth and evaporation kinetics of a sin- The effect of pyrophosphate concentra- gular face containing linear sinks: time tions on calcium phosphate growth on dependent BCF theory 108 (1991) 603 108 (1991) 655 well-crystallized octacalcium phosphate Herbeaux, C., see Lefebvre and hydroxyapatite seed crystals 108 (1991) 385 Hergeth, J., see Glade 108 (1991) 449 Elwenspoek, M.C., see Vogels 108 (1991) 733 Hermoneit, B., see Reiche 108 (1991) 759 Evans, K.E., see Meduoye 108 (1991) 627 Herres, N., see Lambrecht 108 (1991) 301 Evers, J., see Lambrecht 108 (1991) 301 Hesse, H., see Varnhorst 108 (1991) 429 108 (1991) 719 Hezemans. A.M.F., see Van der Sluis 108 (1991) 549 Favier, J.J., see Thevenard 108 (1991) 572 Hill, H., see Astles 108 (1991) 549 Fernandez-Diaz, L., see Prieto 108 (1991) 770 Hill, M., see Astles 108 (1991) 190 Finlayson, B., see Brown 108 (1991) 455 Hlavacek, V., see Scholtz 108 (1991) 441 Hong, W.P., see Bhat 108 (1991) 733 Hottenhuis, M.H.J., see Vogels 108 (1991) 377 Gan Fuxi, see Zhang Hu, H.C., W.H. Chen and T.Y. Lee, Synthe- Gardeniers, J.G.E., C.H. Klein Douwel and sis kinetics and particle size distribution L.J. Giling, Reduced pressure silicon CVD of zeolite A 108 (1991) 561 on hemispherical substrates 108 (1991) 319 Hunter, B., see Sun 108 (1991) 473 836 Author index Hussain, A. and R. Gruehn, Crystal growth Kimura, M., see Sukegawa 108 (1991) 598 of hexagonal potassium tungsten bronze Kimura, Y., see Goto 108 (1991) 688 by chemical transport 108 (1991) 831 Kinney, T.A., see Bornside 108 (1991) 779 Kitano, M., T. Hamabe, S. Maeda and T. Ignatenko, A.A., see Barilo 108 (19913)0 9 Okabe, Growth of large tetrapod-like ZnO Ignatenko, A.A., see Barilo 108 (19913)1 4 crystals. II. Morphological considerations Igumentsev, A.N., see Barilo 108 (19913)1 4 on growth mechanism 108 (19912)7 7 likawa, F., see Bernussi 108 (19916)1 5 Klein Douwel, C.H., see Gardeniers 108 (19913)1 9 108 (19912)0 3 Iliev, K., M. Berkowski, V. Nikolov, P. Peshev Knightley, P., see Moseley and W. Piekarczyk, Conditions of ex- Kobayashi, N., Oxygen transport under an istence and character of the temperature axial magnetic field in Czochralski silicon 108 (19912)4 0 fluctuations during Czochralski growth of growth 108 (19917)2 8 oxide single crystals 108 (1991) 219 Kokubun, Y., see Nishikawa 108 (19913)6 7 Tliev, K., see Berkowski 108 (1991) 225 Kolesnikova, E.N., see Yuferev 108 (19911)2 1 Ishikawa, M., see Nishikawa 108 (1991) 728 Komatsu, H., see Aoki Ishitani, A., see Oshita 108 (1991) 499 Komatsu, S. and Y. Moriyoshi, Growth forms Ishizawa, Y., see Otani 108 (1991) 425 of B-rhombohedral boron whiskers and Itoh, H., T. Nakamura, H. Iwahara and H. platelets prepared in a low-pressure B,H, Sakamato, Observations of growth pro- + He plasma in terms of periodic bond cess of chemically vapor deposited di- chain method 108 (1991) 63 amond single crystal 108 (19916)4 7 Komatsu, S., see Okada 108 (19914)1 6 Ivanov, S.V., P.S. Kop’ev and N.N. Ledent- Kondo, N., see Yamamoto 108 (19914)3 3 sov, Interplay of beryllium segregation Kop’ev, P.S., see Ivanov 108 (19916)6 1 and diffusion in heavily doped GaAs and Kou, S., see Lan 108 (1991) 1 AlGaAs grown by molecular beam epi- Kou, S., see Lan 108 (19913)4 0 taxy (thermodynamic analysis) 108 (1991) 661 Kou, S., see Lan 108 (19913)5 1 Iwahara, H., see Itoh 108 (1991) 647 Kou, S., see Lan 108 (19915)4 1 Kowalski, G., E. Zielinska-Rohozinska and 108 (19917)1 0 T. Czekalski, X-ray characterization of Jaksi¢, Z., see Djinovic 108 (1991) 744 Jayarama Reddy, P., see Ramakrishna Reddy 108 (19917)6 5 defect structure in LEC GaAs crystals 108 (19914)4 1 Koza, M.A., see Bhat Jones, A.C., S.A. Rushworth, D.A. Bohling 108 (19917)1 9 Kroon, J., see Van der Sluis and G.T. Muhr, Growth of Al ,Ga,_ As 108 (19913)0 1 Kuhn, S., see Lambrecht by reduced pressure MOVPE using tri- 108 (19914)3 9 Kuriyama, K., T. Katoh and N. Mineo, methylamine alane (E) Jones, A.C., see Wright 108 (19915)2 5 Crystal growth and characterization of the filled tetrahedral semiconductor LiZnP 108 (1991) 37 Jones, S.H., L.K. Seidel, K.M. Lau and M. Harold, Patterned substrate epitaxy sur- 108 (1991) 73 face shapes Lambrecht, A., N. Herres, B. Spanger, S. Juhasz, Z., Compensation of capillarity in Kuhn, H. Béttner, M. Tacke and J. Evers, 108 (19916)2 1 Gd,Ga;O,, growth Molecular beam epitaxy of Pb,_,Sr,Se for the use in IR devices 108 (19913)0 1 Kabe, I., see Kaneko 108 (19913)3 5 Lan, C.W. and S. Kou, Floating-zone crystal Kaminski, P., W. Strupifski and K. Rosz- growth with a heated ring covering the kiewicz, Effect of substrate temperature melt surface 108 (1991) 1 on the concentration of point defects in Lan, C.W. and S. Kou, Floating-zone crystal vapour phase epitaxial GaP: N,S 108 (1991) 699 growth with a heated and immersed Kanda, H., M. Akaishi and S. Yamaoka, shaper — computer simulation 108 (1991) 340 Impurity distribution among vicinal slopes Lan, C.W. and S. Kou, Heat transfer, fluid of growth spirals developing on the {111} flow and interface shapes in floating-zone faces of synthetic diamonds 108 (1991) 421 crystal growth 108 (1991) 351 Kaneko, T., T. Okuno and I. Kabe, Effect of Lan, C.W. and S. Kou, Floating-zone crystal surface composition on the growth rates growth with a heated and immersed of silicon carbide by CVD 108 (19913)3 5 shaper — experiments 108 (1991) 541 Kash, K., see Bhat 108 (19914)4 1 Lane, R.J., see Bosenberg 108 (1991) 394 Katoh, T., see Kuriyama 108 (1991) 37 Lang, A.R. and G.M. Meaden, Complemen- Kazmierski, C., see Robein 108 (19915)5 4 tary orientation-dependent distributions 108 (19917)1 0 Kermendi, F., see Djinovié of 1.40 and 2.56 eV cathodoluminescence Author index 837 on vicinals on {111} in synthetic di- Moriyoshi, Y., see Okada 108 (1991) 416 amonds 108 (1991) 53 Moseley, A.J., J. Thompson, P. Knightley, Larsen, C.A., see Li 108 (1991) 439 R.H. Wallis and D.J. Stirland, CODE: a Lau, K.M., see Jones 108 (1991) 73 novel single step MOVPE technique for Ledentsov, N.N., see Ivanov 108 (1991) 661 the fabrication of low-dimensional de- Lee, T.Y., see Hu 108 (1991) 561 vices, quantum wires and quantum dots 108 (1991) 203 Lefebvre, A., C. Herbeaux, C. Bouillet and J. Motakef, S., A high temperature creep model Di Persio, Characterization of planar for GaAs 108 (1991) 33 growth defects in slightly-mismatched In Motisuke, P., see Bernussi 108 (1991) 615 GaAs/InP heterostructures 108 (1991) 655 Mihlbauer, A., V. Diers, A. Walther and J.G. Li, S.H., C.A. Larsen and G.B. Stringfellow, Grabmaier, Removal of C/SiC from Decomposition mechanisms of trimethyl- liquid silicon by directional solidification 108 (1991) 41 arsine (E) 108 (19914)3 9 Muhr, G.T., see Jones 108 (1991) 439 Liang, B. and R.W. Hartel, Techniques for Mukhin, S.V., see Lingart 108 (1991) 233 developing nucleation and growth kinetics Mutaftschiev, B., see Henry 108 (1991) 603 from MSMPR data for sucrose crystalli- zation in the presence of growth rate dis- Nakajima, K., see Takenaka 108 (19915)1 9 108 (19911)2 9 persion Nakajima, M., see Takamori 108 (1991) 99 Lin, P., see Bhat 108 (19914)4 1 Nakamura, T., see Itoh 108 (19916)4 7 Lingart, Yu.K., S.V. Mukhin and N.A. Nakayama, M., see Goto 108 (19916)8 8 Tikhonova, Mathematical modelling of Nango, N., see Lu 108 (19914)8 2 heat transfer in Stockbarger-type units for Nanishi, Y., see Yamamoto 108 (19914)3 3 ZnSe growth 108 (19912)3 3 Nikolov, V., see Iliev 108 (19912)1 9 Lipson, S.G., see Raz 108 (19916)3 7 Nikolov, V., see Berkowski 108 (19912)2 5 Liu Xiangyang, see Wang 108 (19918)2 1 Nishikawa, Y., H. Sugawara, M. Ishikawa Lomako, I.D., see Barilo 108 (19913)1 4 and Y. Kokubun, Effects of V/III ratio Loépez-Andrés, S., see Prieto 108 (19917)7 0 on Zn electrical activity in Zn-doped In Lu Taijing, K. Toyoda, N. Nango and T. GaAIP grown by metalorganic chemical Ogawa, Observation of microdefects and vapor deposition 108 (19917)2 8 microprecipitates in Si crystals by IR Nishio, J., Transport restriction effect for scattering tomography 108 (1991) 482 gaseous components on the carbon con- Luginets, A.M., see Barilo 108 (1991) 309 tent of LEC GaAs 108 (1991) 150 Luginets, A.M., see Barilo 108 (1991) 314 Lyster, M., see Astles 108 (1991) 549 Ogawa, T., see Lu 108 (1991) 482 Okabe, T., see Kitano 108 (1991) 277 Maeda, S., see Kitano 108 (1991) 277 Okada, K., S. Komatsu, S. Matsumoto and Mannami, M., see Tsuji 108 (1991) 817 Y. Moriyoshi, Growth steps and etch pits Maroudas, D. and R.A. Brown, On the pre- appearing on {100} planes of diamonds diction of dislocation formation in semi- prepared by combustion-flame deposition conductor crystals grown from the melt: method 108 (1991) 416 analysis of the Haasen model for plastic Okuno, T., see Kaneko 108 (1991) 335 deformation dynamics 108 (1991) 399 Oliver, P.E., see Wright 108 (1991) 525 Masseli, K., see Glade 108 (19914)4 9 Oshita, Y., A. Ishitani and T. Takada, Surface Massies, J., see Deparis 108 (19911)5 7 reaction mechanism of SiCl, with carrier Matsumoto, S., see Okada 108 (19914)1 6 gas H, in silicon vapor phase epitaxial Matthews, D.N., see Sun 108 (19914)7 3 growth 108 (1991) 499 Mayer, I., see Tomazic 108 (19916)7 0 Otani, S., T. Tanaka and Y. Ishizawa, Pre- Meaden, G.M., see Lang 108 (1991) 53 paration of (La,__,.Ce,)B, single crystals Meduoye, G.O., D.J. Bacon and K.E. Evans, by the floating zone method 108 (1991) 425 Computer modelling of temperature and 108 (19915)3 4 stress distributions in LEC-grown GaAs Pal, A.K., see Ghosh crystals 108 (19916)2 7 Parbrook, P.J., see Wright 108 (19915)2 5 Meyer, J.L., see Eidelman 108 (1991) 385 Pearton, S.J., see Abernathy 108 (19918)2 7 Michaelides, A., see Skoulika 108 (19912)8 5 Peshev, P., see Iliev 108 (19912)1 9 Mineo, N., see Kuriyama 108 (1991) 37 Peshev, P., see Berkowski 108 (19912)2 5 Mizuno, Y., see Tsuji 108 (19918)1 7 Piekarczyk, W., see Iliev 108 (19912)1 9 Moriyoshi, Y., see Komatsu 108 (1991) 63 Piekarczyk, W., see Berkowski 108 (19912)2 5 838 Author index Piekarczyk, W. and W.A. Yarbrough, Appli- Skoulika, S., A. Michaelides and A. Aubry, cation of thermodynamics to the ex- Habit modification of coordination com- amination of the diamond CVD process. pounds in the presence of additives; a II. A model of diamond deposition pro- study of the system Ni(f-ala),-2H,O- cess from hydrocarbon—-hydrogen mix- glycine 108 (19912)8 5 tures 108 (1991) 583 Spanger, B., see Lambrecht 108 (19913)0 1 Polman, A., S. Roorda, P.A. Stolk and W.C. Stefani, J.A., see Choe 108 (19912)6 2 Sinke, Triggering explosive crystallization Stirland, D.J., see Moseley 108 (19912)0 3 of amorphous silicon 108 (19911)1 4 Stolk, P.A., see Polman 108 (19911)1 4 Pougnet, A.M., see Robein 108 (19915)5 4 Stringfellow, G.B., see Li 108 (19914)3 9 Prieto, M., L. Fernandez-Diaz and S. Lépez- Strupihski, W., see Kaminski 108 (19916)9 9 Andrés, Spatial and evolutionary aspects Sugawara, H., see Nishikawa 108 (19917)2 8 of nucleation in diffusing-reacting sys- Sukegawa, T., M. Kimura and A. Tanaka, tems 108 (1991) 770 LPE growth of silicon by yo-yo solute Purich, D.L., see Brown 108 (1991) 455 feeding method 108 (19915)9 8 Sun, B.N., K.N.R. Taylor, B. Hunter, D.N. Ramakrishna Reddy, K.T. and P. Jayarama Matthews, S. Ashby and K. Sealey, Two Reddy, Preparation and properties of laser classes of growth spirals on single crystals Raz,pe evrEa.ip,oo drSia.ctG .e dm LoiCrpupshGooanlS oega,in de st hEi.n o Bbfesinel-rmJsv aecdo b,d uNrienwg 108 (1991) 765 SSzueskuoekfli y,Y, BYJ.C.,,O ss eeee TDsiuljaiw ari 111000888 (((111999999111484)))917 173 dendritic growth of ammonium chloride crystals in thin layers 108 (1991) 637 Tacke, M., see Lambrecht 108 (19913)0 1 Reich, P., J. Bohm, B. Hermoneit, P. Rudolph, Takada, T., see Oshita 108 (19914)9 9 R. Schalge and D. Schultze, The effect of Takamori, A., T. Yokotsuka, K. Uchiyama an electrical field on the growth of lithium and M. Nakajima, Ga,In,_,P/GaAs niobate single crystals 108 (1991) 759 grown by gas source molecular beam epi- Robein, D., C. Kazmierski, A.M. Pougnet taxy using phosphine 108 (1991) 99 and B. Rose, Iron incorporation in InP Takenaka, C. and K. Nakajima, Effect of layers using a ferrocene source in atmo- electric current on the LPE growth of InP 108 (19915)1 9 spheric pressure MOVPE 108 (19915)5 4 Tanaka, A., see Sukegawa 108 (19915)9 8 Rokni¢, R., see Djinovi¢é 108 (19917)1 0 Tanaka, T., see Otani 108 (19914)2 5 Roorda, S., see Polman 108 (19911)1 4 Tang, C.L., see Bosenberg 108 (19913)9 4 Rose, B., see Robein 108 (1991) 554 Taylor, K.N.R., see Sun 108 (19914)7 3 Roszkiewicz, K., see Kamifski 108 (19916)9 9 Thevenard, D., A. Rouzaud, J. Coméra and Rouzaud, A., see Thevenard 108 (19915)7 2 J.J. Favier, Influence of convective ther- Rudolph, P., see Reiche 108 (19917)5 9 mal oscillations on a solidification inter- Rushworth, S.A., see Jones 108 (19914)3 9 face in Bridgman growth 108 (19915)7 2 Thompson, J., see Moseley 108 (19912)0 3 108 (19916)4 7 Tien, J.K., see Choe 108 (19912)6 2 Sakamoto, H., see Itoh 108 (1991) 8 Tikhonova, N.A., see Lingart 108 (19912)3 3 Saville, D.A., see Grant 108 (19915)3 4 Tomazic, B.B., I. Mayer and W.E. Brown, Sarkar, A., see Ghosh 108 (19917)5 9 Ion incorporation into octacalcium phos- SScchhoalltgze,, JR..H,. ,s eJe. E.R eGiacthiec a, H.J. Viljoen and V. phate hydrolyzates 108 (19916)7 0 Hlavacek, Coating of fibrous substrates Toyoda, K., see Lu 108 (19914)8 2 108 (19911)9 0 Tsuji, M., Y. Mizuno, Y. Susuki and M. by CVD; analysis of the fiber evolution Schultze, D., see Reiche 108 (19917)5 9 Mannami, Misfit dislocations in epitaxial SSecahlweayr,z ,K .,S .As.e,e sSeuen Bhat 110088 ((1199991144))74 31 bPiboSc/rySsntTales( 001) and PbTe/SnTe(001) 108 (1991) 817 Seidel, L.K., see Jones 108 (1991) 73 Shapovalova, E.F., see Barilo 108 (19913)0 9 Uchiyama, K., see Takamori 108 (1991) 99 Shirmer, O.F., see Varnhorst 108 (19914)2 9 Shyy, W. and M.-H. Chen, Interaction of Van der Sluis, P., A.M.F. Hezemans and J. thermocapillary and natural convection Kroon, Computer knowledge base for flows during solidification: normal and crystallization 108 (19917)1 9 reduced gravity conditions 108 (19912)4 7 Van Enckevort, W.J.P., see Wang 108 (19918)2 1 Sinke, W.C., see Polman 108 (19911)1 4 Van Rosmalen, G.M., see Witkamp 108 (1991) 89 Author index Varnhorst, T., O.F. Shirmer and H. Hesse, Wright, P.J., B. Cockayne, P.J. Parbrook, P.E. Blue coloration of KNbO, caused by Oliver and A.C. Jones, Control of prere- scattering 108 (1991) 429 action in the metalorganic chemical Vesenka, J.P. and Y. Yeh, Defect site nuclea- vapour deposition of zinc- and cadmium- tion of microbubbles as a source of dy- based chalcogenides 108 (19915)2 5 namic light scattering at the growing ice— 108 (1991) 19 water interface Yamamoto, N., N. Kondo and Y. Nanishi, 108 (19911)9 0 Viljoen, H.J., see Scholtz Desorption process of Ga atoms from the Vogels, L.J.P., P. Bennema, M.H.J. Hot- mask surface in selective area growth of tenhuis and M.C. Elwenspoek, On the GaAs by electron-cyclotron-resonance morphology of ammonium nitrate (III): plasma-excited molecular-beam epitaxy theory and observation 108 (1991) 733 (ECR-MBE) 108 (19914)3 3 Yamaoka, S., see Kanda 108 (19914)2 1 Wallace, J.P., see Choe 108 (19912)6 2 Yarbrough, W.A., see Piekarczyk 108 (19915)8 3 Wallis, R.H., see Moseley 108 (19912)0 3 Ye Guifen, see Wang 108 (19918)2 1 Walther, A., see Miihlbauer 108 (1991) 41 Yeh, Y., see Vesenka 108 (1991) 19 Wang Yaoshui, Zheng Manna, P. Bennema, Yokotsuka, T., see Takamori 108 (1991) 99 Zhu Rui, Ye Guifen, Liu Xiangyang and Yuferev, V.S., Z. Chvoj and E.N. Koles- W.J.P. van Enckevort, The occurrence of nikova, The effect of radiative heat trans- scattering centres and dislocations in KDP fer on morphological stability during di- crystals 108 (19918)2 1 rectional solidification of a binary melt 108 (1991) 367 108 (19916)8 3 West, R.H., see Armitage 108 (1991) 25 Westwood, D.I., see Woolf Zhang Qiang, Deng Peizhen and Gan Fuxi, Williams, J.0., see Armitage 108 (19916)8 3 X-ray topographic observation of disloca- Williams, R.H., see Woolf 108 (1991) 25 tion structure in sapphire single crystal 108 (19913)7 7 Witkamp, G.J. and G.M. van Rosmalen, grown by temperature gradient technique 108 (19918)2 1 Growth of gypsum. II. Incorporation of Zheng Manna, see Wang cadmium 108 (1991) 89 Zhigunov, D.I., see Barilo 108 (19913)0 9 Witt, A.F., see Carlson 108 (1991) 508 Zhigunov, D.I., see Barilo 108 (1991) 314 108 (19918)2 1 Woolf, D.A., D.I. Westwood and R.H. Wil- Zhu Rui, see Wang 108 (1991) 744 liams, The molecular beam epitaxial Zielinska-Rohozinska, E., see Kowalski growth of GaAs on Si(100): a variable growth temperature study 108 (1991) 25 Journal of Crystal Growth 108 (1991) 840-843 North-Holland Subject index Accelerated-crucible rotation technique 262 — oxalates, hydrate 455 Adsorption 37, 89, 233, 290, 319, 433, 499 — phosphates 385, 670 Alloys 121, 572 — sulphate, hydrate 89, 290 Aluminum Characterization methods — gallium antimonide 465 by absorption spectroscopy 534 gallium arsenide 439, 615, 661, 827 by atomic absorption spectrometry 301 indium arsenide 203, 441 by Auger electron spectroscopy 301, 335, 683, 765, 806 organic 439 by cathodoluminescence 53, 421 — oxide 377 by chemical analysis 385, 554, 670 Ammonium by deep level transient spectroscopy 699 — chloride 637 by differential thermal analysis 37 — nitrate 733 by eddy current sensor 262 Apparatus by electrical methods 25, 37, 203, 301, 449, 508, 519, 534, — for melt growth 554, 615, 699, 728, 765 — — by Czochralski method by electron microscopy 63, 203, 277, 433, 465, 534, 549, 561, — — — of silicon 262, 779 647, 655, 661, 670, 765, 806, 817, 831 — — by floating zone method by electron probe microanalysis 465, 549 — — — of sodium nitrate 1, 340, 541 by emission 699 — — by uniaxial solidification by infrared spectroscopy 143, 508, 670 — —— of silicon 41 by light scattering 19, 482 — for thin film growth by neutron activation analysis 309 — — by combustion flame deposition method by nuclear magnetic resonance 561 — — of diamonds 416 by optical microscopy 99, 285, 314, 421, 473, 482, 541, 751 — by vapor phase epitaxy by particle size distribution analysis 129, 561 — — through evaporation and condensation by photoluminescence 99, 441, 525, 615, 728 — —— of mercury cadmium telluride 710 by reflectance 114, 429, 615 for miscellaneous purposes by reflection high energy electron diffraction 25, 157 — — coating of fibrous substrates by CVD 190 by Rutherford back scattering 37, 549, 817 — — in-situ observation of defects by IR 482 by second harmonic generation 688 — — near IR imaging 508 by secondary ion mass spectrometry 335, 441, 449, 549, 554, 827 Barium by thermoanalysis 143 — carbonate 370 by transmission spectroscopy 429 — metaborate, B 394 by X-ray photoemission spectroscopy 683 Bismuth by X-ray methods 25, 37, 63, 99, 277, 285, 301, 309, 314, — germanates 219, 225 319, 335, 377, 385, 441, 525, 561, 615, 655, 670, 683, 728, Boron 63, 190 744, 765, 821 Boundary layer control 190, 394, 399 Cobalt 806 Brushite 290 — silicide 806 Burton—Cabrera—Frank theory 603 Computer simulation 105, 340, 351, 455, 499, 627, 779 Constitutional supercooling 367 Cadmium Convection 1, 8, 41, 105, 150, 173, 190, 225, 233, 240, 247, 340, — mercury telluride 549, 710 351, 394, 508, 572, 598 — organic 525 Copper — selenide 525 — gallium selenide 715 Calcium — organic 683 — hydrogen arsenate, hydrate 290 — oxides 683 — hydrogen phosphate, hydrate 290 — zinc alloy 121 Subject index Dendritic growth 173, 637 — niobate 759 Devices 203, 301, 441, 621 — zinc phosphide 37 Diamond 53, 416, 421, 583, 647 Diffusional control 8, 190, 367, 449, 465, 491, 661, 751, 770 Mathematical model 129, 233, 439, 491 Dislocations 19, 33, 377, 399, 473, 615, 627, 751, 779, 817, 821 Melt growth technique Dissolution 309, 519, 598, 670 — by Bridgman-Stockbarger method Distribution coefficient 19, 89, 367, 508 — — of copper zinc alloy 121 Dopants 301, 449, 508, 554, 572, 598, 661, 728, 827 — — of ice 19 — — of tin bismuth alloy 572 Etching — — of zine selenide 233 — chemical 19, 203, 377, 416, 425 by Czochralski method of bismuth germanates 219, 225 Gadolinium of gadolinium gallium garnet 621 — gallium garnet 621 of gallium arsenide 150, 508, 627, 744 Gallium of lithium niobate 759 arsenide 25, 33, 73, 105, 150, 157, 439, 508, 627, 661, 744, of semiconductors 399 827 of silicon 240, 262, 779 indium arsenide 203 theory of 240, 399 indium phosphide 99 by floating zone method phosphide 699 — of lanthanum cerium boride 425 Garnets 621 — of sodium nitrate 1, 340, 351, 541 Grain boundary 277, 821 by traveling heater method Gypsum 89, 290 — of aluminum gallium antimonide 465 — theory of 465 Heat flow control 41, 233, 247, 367, 541, 621, 779 by uniaxial solidification Heterojunction 441, 549, 655 — of lithium zinc phosphide 37 — of sapphire 377 Ice 19 — of silicon 41 Impurity 19, 53, 89, 150, 240, 285, 314, 367, 394, 421, 455, 482, — theory of 367 508, 598, 615, 670, 821 by zone melting Indium — — theory of 247 — gallium aluminum phosphide 728 — using immersed sheet heater — organic 449, 554 — — of sodium nitrate 541 — phosphide 203, 449, 519, 554 Mercury Interface 1, 19, 219, 225, 247, 340, 351, 394, 425, 508, 541, 572, — cadmium telluride 549, 710 621, 655, 759, 817 Microgravity 1, 8, 173, 247, 340, 351, 598 Iron 806 Morphological stability 63, 173, 319, 367, 670, 733 — silicide 806 Morphology of growth 25, 53, 63, 73, 203, 247, 277, 285, 290, 309, 314, 319, 394, 416, 637, 647, 661, 670, 733, 751, 759, 821, 831 Kinetics of crystallization 561 of dislocation multiplication 399 Nickel of dissolution 670 — coordination compound 285 of growth 25, 73, 105, 114, 129, 262, 277, 314, 335, 385, 439, Nitrite sodalite 143 465, 499, 519, 525, 554, 561, 603, 670, 710, 751, 759, 806, 821 Nucleation 114, 121, 129, 277, 455 of impurity incorporation 89 Numbers of interface control 394, 751, 759 Biot 779 of nucleation 114, 121, 129, 277, 314, 455, 561, 770 Grashof 173, 219, 225, 247 Marangoni 1, 247, 340 Lanthanum Nusselt 190 — cerium boride 425 Peclet 173, 779 Lattice mismatch 99, 441, 655 Prandtl, 351 Lead Reynolds 219, 225 — strontium selenide 301 Stefan 779 — sulphide 817 — telluride 817 Optoelectronics 441 Lithium Organic crystals 8, 129, 285, 688, 751 842 Subject index Perfection of crystals 53, 203, 314, 394, 399, 425, 429, 482, 508, — characterization 473 541, 655, 688, 699, 744, 779, 821 — high T, 473 Periodic bond chain theory 63, 290, 733 Supercooling, supersaturation 89, 114, 129, 173, 309, 314, 519, Pharmacolite 290 637, 670, 770 Phase diagrams 309, 314, 670 Surface energy, determination of 621, 733 Phenomenological theory 73, 399, 508, 572 Surface processes 290, 499, 603, 661 Potassium Surface structure 25, 53, 73, 157, 335, 473, 733 — dihydrogen phosphate 821 — niobate 429 Thermodynamics 89, 367, 583, 661, 670, 806 — tungsten bronze 831 Thin film growth Precursor 439, 806 by liquid phase epitaxy Proteins 8 — of indium phosphide 519 Purification of materials 19, 41 — of mercury cadmium telluride 549 — of silicon 598 Quantum wells /size effects 203 by magnetron sputtering — of zinc oxide 534 Rare earth by molecular beam epitaxy — orthoferrites 309, 314 — of aluminum gallium arsenide 661, 827 — of gallium arsenide 25, 157, 433, 661, 827 Sapphire 377 — of gallium indium phosphide 99 Segregation 508 — of lead strontium selenide 301 Silicon 41, 114, 240, 262, 482, 499, 598 by vapor phase epitaxy — carbide 335 through chemical vapor deposition Sodium — of boron 63 — nitrate 1, 340, 351, 541 — of diamond 416, 647 Solid growth technique — of silicon 319, 499 — by explosive crystallization — of silicon carbide 335 — — of amorphous silicon 114 — for coating fibrous substrates 190 Solution growth technique through evaporation and condensation — by flux method — of copper gallium selenide 765 — of B barium metaborate 394 — of lead sulphide 817 — of rare earth orthoferrites 309, 314 — of lead telluride 817 — of yttrium barium cuprate 473 — of mercury cadmium telluride 710 by gel method through metalorganic chemical vapor deposition — of barium carbonate 770 — of aluminum gallium arsenide 439, 615 — of strontium carbonate 770 of aluminum indium arsenide 441 by hydrothermal growth of cadmium selenide 525 — of nitrite sodalite 143 of copper oxide 683 by low temperature method of diamond 583 of ammonium nitrate 733 of gallium arsenide 73, 105, 439 of calcium oxalate, hydrate 455 of indium gallium aluminum phosphide 728 of calcium phosphates 385, 670 of indium gallium arsenide 655 of gypsum 89 of indium phosphide 449, 554 of nickel bisglycinate, dihydrate 285 of low-dimensional devices 203 of organic crystals 751 - — of transition metals and their silicides 806 of zeolite 561 of zinc selenide 525 by top seeded pulling method theory of 491 — of potassium niobate 429 theory of 290 — bismuth alloy 572 using computer knowledge base 719 ee a, or moving boundary problem 173, 247, 340, Uniformity of growth 491 Step 416, 473, 821 Strain 33 Vapor growth technique Sucrose 129 — by chemical transport Superconductivity 473 — — of potassium tungsten bronze 831 — bulk 473 — by thermal oxidation