Table Of Content

Contents Preface ix 5TH INTERNATIONAL CONFERENCE ON METALORGANIC VAPOR PHASE EPITAXY SECTION I. GROWTH MECHANISM AND REACTION KINETICS Detailed models of the MOVPE process * K.F. Jensen, D.1. Fotiadis and T.J. Mountziaris Gas phase studies of MOVPE by optical methods * W. Richter, P. Kurpas, R. Liickerath, M. Motzkus and R. Waschbiisch Thermal decomposition studies of group V hydrides P. Abraham, A. Bekkaoui, V. Souliére, J. Bouix and Y. Monteil Comparative pyrolysis studies of ethylarsines S.H. Li, C.A. Larsen and G.B. Stringfellow Surface science studies of MOVPE processes: a review of progress M.E. Pemble, D.S. Buhaenko, S.M. Francis, P.A. Goulding and J.T. Allen In situ monitoring of crystal growth by reflectance difference spectroscopy * E. Colas, D.E. Aspnes, R. Bhat, S.S. Studna, J.P. Harbison, L.T. Florez, M.A. Koza and V.G. Keramidas Surface processes during growth of GaAs by MOCVD L.J. Giling and M.H.J.M. de Croon In-situ monitoring of GaAs growth process in MOVPE by surface photo-absorption method N. Kobayashi, T. Makimoto, Y. Yamauchi and Y. Horikoshi 62 Reflectance-difference study of surface chemistry in MOVPE growth L. Samuelson, K. Deppert, S. Jeppesen, J. Jonsson, G. Paulsson and P. Schmidt 68 SECTION II. ATOMIC LAYER AND PULSED FLOW EPITAXY Atmospheric pressure atomic layer epitaxy: mechanisms and applications * P.D. Dapkus, B.Y. Maa, Q. Chen, W.G. Jeong and S.P. DenBaars Atomic layer epitaxy of Al,Ga,_, As and device quality GaAs J.R. Gong, P.C. Colter, D. Jung, S.A. Hussien, C.A. Parker, A. Dip, F. Hyuga, W.M. Duncan and S.M. Bedair High carbon doping of Al,Ga,_ , As (0 < x < 1) by atomic layer epitaxy for device applications B.-C. Chung, R.T. Green and H.F. MacMillan Ordered GalnP by atomic layer epitaxy B.T. McDermott, N.A. El-Masry, B.L. Jiang, F. Hyuga, S.M. Bedair and W.M. Duncan Pulsed jet epitaxy of III-V compounds * M. Ozeki, N. Ohtsuka, Y. Sakuma and K. Kodama GaAs epitaxy using alternate pulses in a standard LP-MOVPE reactor J. Wisser, P. Czuprin, D. Grundmann, P. Balk, M. Waschbiisch, R. Liickerath and W. Richter * Invited paper. Contents SECTION III. SELECTIVE AREA GROWTH Selective epitaxy of GaAs, Al,Ga,_,As, and In,Ga,_ ,As * T.F. Kuech, M.S. Goorsky, M.A. Tischler, A. Palevski, P. Solomon, R. Potemski, C.S. Tsai, J.A. Lebens and K.J. Vahala 116 Selective area epitaxy of GaAs on Si using atomic layer epitaxy by LP-MOVPE N.H. Karam, V. Haven, S.M. Vernon, N. El-Masry, E.H. Lingunis and N. Haegel 129 Patterned crystal growth of GaAs using laser scanning with atomic layer epitaxy S. Iwai, T. Meguro, Y. Aoyagi and T. Miyoshi 136 Selective embedded growth of GalnAs by low pressure MOVPE O. Kayser, B. Opitz, B. Westphalen, U. Niggebriigge, K. Schneider and P. Balk 141 Selective area MOVPE of GalnAs/InP heterostructures on masked and nonplanar (100) and {111} substrates Y.D. Galeuchet and P. Roentgen 147 Composition of selectively grown In ,Ga,_ , As structures from locally resolved Raman spectroscopy J. Finders, J. Geurts, A. Kohl, M. Weyers, B. Opitz, O. Kayser and P. Balk 151 Selective MOVPE of semi-insulating InP layers for high speed OEICs G. Laube, A. Nowitzki, K. Diitting and P. Speier 156 Non-planar MOVPE growth using a novel shadow-masking technique P. Demeester, L. Buydens, I. Moerman, D. Lootens and P. Van Daele 161 SECTION IV. GROWTH RELATED STUDIES IV.A. The role of reactors Layer uniformity in a multiwafer MOVPE reactor for III-V compounds * P.M. Frijlink, J.L. Nicolas and P. Suchet 166 Influence of gas mixing on the lateral uniformity in horizontal MOVPE reactors I. Moerman, G. Coudenys, P. Demeester, B. Turner and J. Crawley 175 Influence of gas mixing and expansion in horizontal MOVPE reactors N.J. Mason and P.J. Walker 181 Growth of extremely uniform III-V compound semiconductor layers by LP-MOVPE by application of the gas foil technique for substrate rotation D. Schmitz, G. Strauch, H. Jiirgensen and M. Heyen 188 Uniformity — optical properties of GalnP—GaAllInP layers grown by MOVPE M. Mpaskoutas, C. Morhaim, J.N. Patillon, J.P. André, A. Valster and J.J. Rusch 192 MOVPE growth of II-VI compounds in a vertical reactor with high-speed horizontal rotating disk G.S. Tompa, T. Salagaj, L. Cook, R.A. Stall, C.R. Nelson, P.L. Anderson, W.H. Wright, W.L. Ahlgren and S.M. Johnson 198 IV.B. Growth and characterization Etching of InP by HCl in an OMVPE reactor C. Caneau, R. Bhat, M. Koza, J.R. Hayes and R. Esagui 203 Plasma MOVPE of ternary and quaternary layers M. Behet, A. Brauers and P. Balk 209 The influence of growth conditions on the planarity of MOVPE grown GalInAs(P) interfaces P.C. Spurdens, M.R. Taylor, M. Hockly and M.J. Yates 215 Effect of wafer cleavage on composition of InGaAsP grown on InP by low pressure MOCVD D.G. Knight, C.J. Miner and B. Watt 221 Lateral and longitudinal patterning of semiconductor structures by crystal growth on nonplanar and dielectric-masked GaAs substrates: application to thickness-modulated waveguide structures E. Colas, A. Shahar, B.D. Soole, W.J. Tomlinson, J.R. Hayes, C. Caneau and R. Bhat 226 Step-flow growth and fractional-layer superlattices on (111)B GaAs vicinal surfaces T. Fukui and H. Saito 231 Strong enhancement of band edge PL intensity and improved morphology for AlGaAs grown on lenticular GaAs substrates by low pressure MOVPE E.S. Johnson Contents Direct evidence of lateral bandgap patterning on stepped structures grown on non-planar, vicinal GaAs surfaces by cathodoluminescence investigations E. Colas, E.M. Clausen, Jr., E. Kapon, D.M. Hwang, S. Simhony, R. Bhat, C.Y. Chen, P.S.D. Lin, L. Schiavone and B. Van der Gaag 243 Infrared spectroscopic determination of substitutional carbon in MOVPE grown films of GaAs A.V. Annapragada, K.F. Jensen and T.F. Kuech 248 IV.C. Doping Doping level anomalies resulting from exposure to dopant precursors during cooling in MOVPE S. Cole, L. Davis, W.J. Duncan, E.M. Marsh, R.H. Moss, W.J.M. Rothwell, P.J. Skevington and G.D.T. Spiller 254 Silicon spike-doping of GaAs with AP-MOVPE P. Schmidt, K. Deppert and H. Kostial 259 The influence of substrate orientation and mis-orientation on the Si-doping of GaAs grown by MOVPE X. Tang, J. te Nijenhuis, Y. Li and L.J. Giling 263 Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy M.A. Tischler, R.M. Potemski, T.F. Kuech, F. Cardone, M.S. Goorsky and G. Scilla 268 On the “tunnel” diffusion of iron dopant in InP E.W.A. Young and G.M. Fontijn 274 Carbon doping exceeding 107° cm~* in GaAs grown by AP-MOVPE ** M.C. Hanna, Z.H. Lu, E.W. Mao, T. McCormick, E.G. Oh, A. Majerfeld and D.M. Szmyd 279 SECTION V. NEW PRECURSORS FOR III-V AND II-VI COMPOUNDS V.A. Synthesis and properties Alternative precursors for III-V MOVPE criteria for evaluation * A. Brauers 281 Alternative Group V precursors for CVD applications * R.M. Lum and J.K. Klingert 290 Precursors for II-VI semiconductors: requirements and developments * A.C. Jones, P.J. Wright and B. Cockayne 297 Physical properties of non-pyrophoric group III precursors for MOVPE L. Pohl, M. Hostalek, H. Schumann, U. Hartmann, W. Wassermann, A. Brauers, G.K. Regel, R. Hével, P. Balk and F. Scholz 309 Detection of phenylarsine in air J. Zacheja, A. Schiitze, A. Brauers and D. Kohl 314 Screening of organotellurium compounds for use as MOVPE precursors J.E. Hails and S.J.C. Irvine 319 Synthesis and decomposition studies of dialkyltellurides of type RTeR’ A.E.D. McQueen, P.N. Culshaw, J.C. Walton, D.V. Shenai-Khatkhate, D.J. Cole-Hamilton and J.B. Mullin 325 V.B. Growth with new precursors Epitaxial growth of GaAs with (C,H,),GaCl and AsH, in a hot-wall system N.I. Buchan, T.F. Kuech, M.A. Tischler and R. Potemski 331 Growth of GaAs by MOCVD using a solid arsenic source R. Pefia-Sierra, J.G. Castro-Zavala and A. Escobosa 337 Control of residual impurity incorporation in tertiarybutylarsine-grown GaAs G. Haacke, S.P. Watkins and H. Burkhard 342 Trisdimethylaminoarsine as As source for the LP-MOVPE of GaAs ** M.H. Zimmer, R. Hével, W. Brysch, A. Brauers and P. Balk 348 ** Extended abstract. Contents Growth of low carbon content Al Ga, _, As by reduced pressure MOVPE using trimethylamine alane * * A.C. Jones and S.A. Rushworth Growth of GalnP over the whole composition range by OMVPE using tertiarybutylphosphine for the phosphorus source Y. Takeda, S. Araki, M. Takemi, S. Noda and A. Sasaki Growth of InP with novel In and P precursors R. Hével, N. Brianese, A. Brauers, P. Balk, M. Zimmer, M. Hostalek and L. Pohl Atmospheric-pressure MOVPE growth of InP using Lewis base monovalent cyclopentadienyl indium K. Onuma, A. Kasahara, K. Kato, N. Aihara and T. Udagawa Novel liquid precursors for the growth of InP and GalnAs epitaxial layers by MOVPE F. Scholz, A. Molassioti, M. Moser, B. Notheisen, K. Streubel, M. Hostalek and L. Pohl MOVPE growth of uniform AlGaAs and InGaAs using organoarsine with inverted-horizontal atmospheric-pressure reactor T. Kikkawa, H. Tanaka and J. Komeno MOVPE of AIN and GaN by using novel precursors K.-L. Ho, K.F. Jensen, J.-W. Hwang, W.L. Gladfelter and J.F. Evans Transition metal doping of LP-MOCVD-grown InP T. Wolf, A. Krost, D. Bimberg, F. Reier, P. Harde, J. Winterfeld and H. Schumann 381 Purity of zinc precursors and the properties of epitaxial ZnSe grown by atmospheric pressure metalorganic chemical vapour deposition H.M. Yates and J.O. Williams 386 MOVPE of ZnSe using organometallic allyl selenium precursors S. Patnaik, K.F. Jensen and K.P. Giapis SECTION VI. GROWTH OF III-V STRUCTURES VLA. Lattice matched heterostructures Growth of GalnAs bulk mixed crystals as a substrate with a tailored lattice parameter * H.-J. Sell 396 High quality Al,Ga,_,_,In,P alloys grown by MOVPE on (311)B GaAs substrates A. Valster, C.T.H.F. Liedenbaum, M.N. Finke, A.L.G. Severens, M.J.B. Boermans, D.E.W. Vandenhoudt and C.W.T. Bulle-Lieuwma 403 Hetero-epitaxy of ZnSiAs,/GaAs grown by atmospheric pressure MOVPE N. Achargui, A. Benachemhou, A. Fourcaran, G. Bougnot, P. Coulon, J.P. Laurenti and J. Camassel 410 OMVPE growth and characterization of Bi-containing III-V alloys K.Y. Ma, Z.M. Fang, R.M. Cohen and G.B. Stringfellow 416 GaSb/InAs heterojunctions grown by MOVPE S.K. Haywood, R.W. Martin, N.J. Mason, R.J. Nicholas and PJ. Walker 422 Investigation of MOCVD growth of Al Ga,_ , As/GaAs and Al ,Ga,_ ,As/GaAs/ Al,Ga,_ ,As/GaAs multilayer structures with high Al content Gao Hongkai, Yun Feng, Zhang Jikang, Hou Xun and Gong Ping 428 Optical and electrical properties of the Al ,Ga,_ ,As/GaAs single heterojunctions grown by low pressure MOVPE F.E.G. Guimaraes, I. Gyuro, F. Scheffer, M. Heuken and K. Heime Low contact-resistance GaAs/AlGaAs regrowth interfaces and compositional grading layer formation during growth by metalorganic vapor phase epitaxy K. Hiruma, T. Haga, T. Usagawa and A. Ihara Growth of highly uniform, reproducible InGaAs films in a multiwafer rotating disk reactor by MOCVD M.A. McKee, P.E. Norris, R.A. Stall, G.S. Tompa, C.S. Chern, D. Noh, S.S. Kang and T_J. Jasinski Scanning transmission electron microscopy of heterointerfaces grown by metalorganic vapor phase epitaxy (MOVPE) H. Lakner, B. Bollig, E. Kubalek, M. Heuken, K. Heime, F. Scheffer and F.E.G. Guimaraes 452 VI.B. Strained layers and alternative substrates MOVPE growth and characterization of strained layers * M.-E. Pistol, A. Gustafsson, M. Gerling, L. Samuelson and H. Titze 458 Surface morphology improvement of GaAs-on-Si using a two-reactor MOCVD system and an AlAs/GaAs low temperature buffer layer: an approach to crack-free GaAs-on-Si T. Nishimura, K. Kadoiwa, N. Hayafuji, M. Miyashita, K. Mitsui, H. Kumabe and T. Murotani Contents MOCVD growth of GaAs on Si using (Al,In)GaAs/GaAs buffer layer K. Fujita, Y. Shiba and K. Asai 473 Very low dislocation density GaAs on Si using superlattices grown by MOCVD T. Soga, H. Nishikawa, T. Jimbo and M. Umeno 479 Optical quality improvement of MOVPE grown GaAlAs/GaAs double heterostructures on silicon substrates N. Draidia, R. Azoulay, L. Dugrand, A.C. Papadopoulo, Y. Gao, B. Sermage, P. Ossart and J. Meddeb 483 High quality GaAs on Si using Sig 94Gep 9,/Ge buffer layers R. Venkatasubramanian, M.L. Timmons, J.B. Posthill, B-M. Keyes and R.K. Ahrenkiel 489 LP-MOVPE growth of antiphase domain free InP on (001) Si using low temperature processing * * M. Grundmann, A. Krost and D. Bimberg 494 Critical layer thickness of MOVPE-grown GaAs on In,Ga,_ , As J. te Nijenhuis, PJ. van der Wel, R.W.F. van Asten, P.R. Hageman and L.J. Giling 496 Improvement of the crystalline, optical and electrical quality of MOVPE GalnSb layers G. Bougnot, F. Delannoy, F. Pascal, P. Grosse, A. Giani, J. Kaoukab, J. Bougnot, R. Fourcade, P.J. Walker, N.J. Mason and H. Lambert 502 MOVPE growth of GaN on a misoriented sapphire substrate K. Hiramatsu, H. Amano, I. Akasaki, H. Kato, N. Koide and K. Manabe 509 MOVPE growth of GaP and GaAs_P,_ , on (111)-oriented GaP H. Titze, M. Gerling, M.-E. Pistol and L. Samuelson 513 Absorption characteristics of GaSb/InAs and InSb/InAs SLSs grown on (111) GaAs by MOVPE ** M. Lakrimi, N.J. Mason, R.J. Nicholas, G.B. Stringfellow, G. Summers and P.J. Walker 518 VLC. Quantum wells Growth and analysis of quantum well structures * D. Griitzmacher 520 Temperature resolved photoluminescence investigations on InGaAs/InP MQWs R. Schwedler, F. Reinhardt, D. Griitzmacher and K. Wolter 531 Effect of growth parameters on the interfacial structure of GalnAs/InP quantum wells J. Hergeth, D. Griitzmacher, F. Reinhardt and P. Balk 537 Finite interface effects for thin GalnAs/InP quantum wells grown by LP-MOVPE with a growth interruption sequence J. Camassel, J.P. Laurenti, S. Juillaguet, F. Reinhardt, K. Wolter, H. Kurz and D. Griitzmacher 543 Lateral and vertical composition control in MOCVD-grown InP/GalInAs(P) structures C.G. Cureton, E.J. Thrush and A.T.R. Briggs 549 Determination of the band discontinuity of MOCVD grown In,_,Ga,As/In,_,Al,As heterostructures with optical and structural methods J. Béhrer, M. Grundmann, U. Lienert, D. Bimberg, H. Ishikawa, M. Kamada and N. Watanabe 555 MOVPE of In(GaAs)P/ InGaAs MQW structures P. Wiedemann, M. Klenk, W. Kérber, U. Koerner, R. Weinmann, E. Zielinski and P. Speier 561 OMVPE growth of GalnAs/InP and GalnAs/GalnAsP quantum wells H. Kamei and H. Hayashi 567 Influence of the gas switching sequence on the optical properties of ultrathin InGaAs/InP quantum wells G. Landgren, P. Ojala and O. Ekstrém 573 MOVPE growth and optical properties of AlGaInP/GalInP strained single quantum ve structures M. Kondo, K. Domen, C. Anayama, T. Tanahashi and K. Nakajima 578 Investigation of In,Ga,_ ,As/GaAs strained quantum well structures grown on non-planar substrates byM OCVD P. Grodzinski, Y. Zou, J.S. Osinski and P.D. Dapkus 583 Patterning and overgrowth of nanostructure quantum well wire arrays by LP-MOVPE N.H. Karam, A. Mastrovito, V. Haven, K. Ismail, S. Pennycook and H.I. Smith 591 SECTION VII. II-VI SEMICONDUCTORS VILA. Narrow gap 11 —VI semiconductors MOVPE of narrow band gap II-VI materials * R. Triboulet Contents The growth of CMT on GaAs for high quality linear arrays of MWIR and LWIR photodiodes L.M. Smith, C.F. Byrne, D. Patel, P. Knowles, J. Thompson, G.T. Jenkin, T. Nguyen Duy, A. Durand and M. Bourdillot 605 Low temperature MOCVD of Hg, _ ,Cd,Te on 311, 511, 711 and shaped GaAs G.N. Pain, C. Sandford, G.K.G. Smith, A.W. Stevenson, D. Gao, L.S. Wielunski, S.P. Russo, G.K. Reeves and R. Elliman 610 Reaction measurements and growth of HgTe/CdTe by photo-assisted MOCVD using an excimer laser Y. Fujita, T. Terada, S. Fujii and T. Iuchi 621 Low temperature growth of (Cd,Hg)Te layers by MOVPE F. Desjonquéres, A. Tromson-Carli, P. Cheuvart, R. Druilhe, C. Grattepain, A. Katty, Y. Marfaing, R. Triboulet and D. Lorans 626 HRTEM studies of defects and interdiffusion in Hg, _,_,Mn,Cd,Te (0 < x, y < 1) grown by low temperature MOCVD G.N. Pain, C.J. Rossouw, S.R. Glanvill, R.S. Rowe, R.S. Dickson, G.B. Deacon and B.O. West 632 VII.B. Wide gap II-VI semiconductors MOVPE growth of wide bandgap II-VI materials * H. Kukimoto 637 Surface photochemical reactions for alkyl group elimination from precursors in OMVPE Sz. Fujita, S. Maruo, H. Ishio, P.A. Murawala and Sg. Fujita The effects of photo-assisted MOCVD on the doping of Na acceptors into ZnS epitaxial layers T. Ohno and T. Taguchi Effects of Ar ion laser irradiation on MOVPE of ZnSe using DMZn and DMSe as reactants A. Yoshikawa, T. Okamoto and T. Fujimoto High quality over-epilayer growth of ZnSe on Li*-implanted ZnSe epilayers by atmospheric pressure MOVPE T. Yodo, K. Ueda, K. Morio, K. Yamashita and S. Tanaka MOVPE growth and characterisation of CdTe on CdS single crystal substrates M.Y. Simmons, P.D. Brown and K. Durose Raman characterization of ZnSe/GaAs MOVPE heterostructures O. Pagés, M. Renucci, O. Briot, N. Tempier and R.L. Aulombard Properties of Zn, _ ,Cd,S ternary and Zn,_ ,Cd,S,_ Se, quaternary thin films on GaAs grown by OMVPE Sz. Fujita, S. Hayashi, M. Funato, T. Yoshie and Sg. Fujita Doping of nitrogen in ZnSe films: improved doping properties in ZnSe/ZnSSe periodic layered structures grown on GaAs by MOVPE I. Suemune, H. Masato, K. Nakanishi, Y. Kuroda and M. Yamanishi 679 SECTION VIII. HIGH 7, SUPERCONDUCTORS AND OXIDES MOCVD superconducting oxide films * T. Hirai and H. Yamane 683 Fabrication and characterization of Bi-Sr-Ca—Cu-—O MOCVD thin films T. Sugimoto, M. Yoshida, K. Yamaguchi, Y. Yamada, K. Sugawara, Y. Shiohara and S. Tanaka 692 In-situ growth of YBCO high-7, superconducting thin films by plasma-enhanced metalorganic chemical vapor deposition J. Zhao, C.S. Chern, Y.Q. Li, D.W. Noh, P.E. Norris, P. Zawadzki, B. Kear and B. Gallois 699 Preparation of properties of superconducting Bi-Sr-Ca—Cu-—O thin films on polycrystalline silver substrates by organome- tallic chemical vapor deposition J.M. Zhang, B.W. Wessels, D.S. Richeson and T.J. Marks 705 Preparation and properties of Ba-deficient superconducting thin Y-Ba—Cu-—O films * * J. Souc, D. Machajdik, V. Smatko, V. Strbik, K. Fréhlich, S. Hrib, S. Stefanik, P. Kordos and J. Ivan 710 Growth studies of ferroelectric oxide layers prepared by organometallic chemical vapor deposition L.A. Wills, W.A. Feil, B.W. Wessels, L.M. Tonge and T.J. Marks 712 SECTION IX. DEVICES IX.A. Lasers Quantum wire lasers by OMCVD growth on nonplanar substrates * R. Bhat, E. Kapon, S. Simhony, E. Colas, D.M. Hwang, N.G. Stoffel and M.A. Koza Contents MOVPE of AlGalnP /GalnP heterostructures for visible lasers * P. Roentgen, W. Heuberger, G.L. Bona and P. Unger 724 Structures for improved 1.5 jm wavelength lasers grown by LP-OMVPE; InGaAs~—InP strained-layer quantum wells a good candidate * P.J.A. Thijs, E.A. Montie and T. van Dongen 731 Metalorganic chemical vapor deposition of InGaAs-GaAs-AlGaAs strained-layer quantum well lasers * P.K. York, K.J. Beernink, J. Kim, J.J. Alwan, J.J. Coleman and C.M. Wayman 741 Reproducible growth of narrow linewidth multiple quantum well graded index separate confinement distributed feedback (MQW-GRIN-SCH-DFB) lasers by MOVPE T. Tanbun-Ek, R.A. Logan, H. Temkin, N.A. Olsson, M.C. Wu, A.M. Sergent and K.W. Wecht 751 Room temperature low threshold CW operation of MOCVD-grown AlGaAs/GaAs SQW lasers on Si substrates with SiO, back-coating T. Egawa, H. Tada, Y. Kobayashi, T. Soga, T. Jimbo and M. Umeno 757 Low threshold 1.5 74m SCH-MQW lasers by atmospheric pressure MOVPE and direct comparison of low versus atmospheric pressure MOVPE laser growth A. Ougazzaden, J.-D. Ganiére, Y. Gao, E.V.K. Rao, B. Sermage, C. Kazmierski and A. Mircea 761 A new selective MOVPE regrowth process utilizing in-situ vapor phase etching for optoelectronic integrated circuits K. Shimoyama, Y. Inoue, M. Katoh, H. Gotoh, Y. Suzuki and H. Yajima 767 Orientation dependence of S, Zn, Si, Te, and Sn doping in OMCVD growth of InP and GaAs: application to DH lasers and lateral p—n junction arrays grown on non-planar substrates R. Bhat, C. Caneau, C.E. Zah, M.A. Koza, W.A. Bonner, D.M. Hwang, S.A. Schwarz, S.G. Menocal and F.G. Favire Interaction of the dopants Mg and Si in Al Ga,_ , As/GaAs heterolayers (MOVPE): application to DQW laser structures L. Korte, R. Treichler, M. Schreiber, Ch. Tanner, G. Kristen, C. Hanke and G. Weimann Growth and assessment of InGaAs/InGaAlAs/InP multiple quantum well lasers R.W. Glew, P.D. Greene, G.D. Henshall, C. Lowney, J.P. Stagg, J.E.A. Whiteaway, B. Garrett and A.G. Norman In, 47Gay 5;As—InP heterostructures for vertical cavity surface emitting lasers at 1.65 wm wavelength R.D. Dupuis, D.G. Deppe, C.J. Pinzone, N.D. Gerrard, S. Singh, G.J. Zydzik, J.P. van der Ziel and C.A. Green 790 Strained-layer InGaAs/ InGaAsP MQW structures and their application to 1.67 um lasers grown by metalorganic vapor phase epitaxy M. Yamamoto, M. Oishi, H. Sudo, J. Nakano and N. Tsuzuki 796 Lasing characteristics of InGaAs/ InGaAsP MQW structures grown by low-pressure MOVPE M. Rosenzweig, W. Ebert, D. Franke, N. Grote, B. Sartorius and P. Wolfram 802 IX.B. Optoelectronic devices and circuits InP based optoelectronics * N. Pitz Selective MOVPE growth of GaAs on Si and its applications to LEDs A. Ackaert, P. Demeester, L. Buydens, G. Coudenys, P. Van Daele and M. Renaud Improvement of InP crystal quality grown on GaAs substrates and device applications Tatsuya Kimura, Tadashi Kimura, E. Ishimura, F. Uesugi, M. Tsugami, K. Mizuguchi and T. Murotani GaAs/GaAlAs surface emitting IR LED with Bragg reflector grown by MOCVD T. Kato, H. Susawa, M. Hirotani, T. Saka, Y. Ohashi, E. Shichi and S. Shibata Improving the performance of InAs, _ .Sb,/InSb infrared detectors grown by metalorganic chemical vapor deposition R.M. Biefeld, J.R. Wendt and S.R. Kurtz Two-step MOVPE growth for planar InP/InGaAs/InP pin- FET combinations with locally diffused buffer layer G. Ebbinghaus, R. Strzoda, T. Scherg, H. Albrecht, R. Penz and C. Lauterbach Growth and characterization of AlGaAs/GaAs quantum well structures for the fabrication of long wavelength infrared detectors Z.F. Paska, J.Y. Andersson, L. Lundqvist and C.-O.A. Olsson Application of AP MOVPE to a new butt-coupling scheme B. Rose, D. Remiens, V. Hornung and D. Robein High optical and electrical quality GalnAs/InP, GaAs/InP double heterostructures for optoelectronic integration J.P. André, J.N. Patillon, P. Riglet, J.Y. Lesiourd, H. Le Coz and B.G. Martin The use of InP-based semiconductor reflective stacks for enhanced device performance J. Thompson, A.K. Wood, A.J. Moseley, M.Q. Kearley, P.J. Topham, N. Maung and N. Carr XVIil Contents LP-MOVPE growth and characterization of wide-gap InGaAsP/InP layers (A, < 1.2 um) for optical waveguide applications F.W. Reier, P. Harde and H. Kaiser 867 A novel technique for the preservation of gratings in InP and InGaAsP and for the simultaneous preservation of InP, InGaAs, and InGaAsP in OMCVD R. Bhat, M.A. Koza, C.E. Zah, C. Caneau, C.C. Chang, S.A. Schwarz, A.S. Gozdz, P.S.D. Lin and A. Yi-Yan 871 A new approach for the integration of optoelectronic devices using laser selective area epitaxy H. Liu, J.C. Roberts, J. Ramdani, S.M. Bedair, J. Farari, J.P. Vilcot and D. Decoster 878 [X.C. Electronic devices High frequency AlGaAs/GaAs heterojunction bipolar transistors: the role of MOVPE * G. Packeiser, H. Tews and P. Zwicknagl 883 Qualification of OMVPE AlGaAs/GaAs HBT structures using nondestructive photoreflectance spectroscopy N. Bottka, D.K. Gaskill, P.D. Wright, R.W. Kaliski and D.A. Williams 893 MOVPE growth of highly zinc-doped bases for GaAs/AlGaAs heterojunction bipolar transistors S. Tanaka, M. Ohkubo, M. Irikawa and T. Kikuta 898 LPMOCVD growth of C doped GaAs layers and AlGaAs/GaAs heterojunction bipolar transistors Y. Ashizawa, T. Noda, K. Morizuka, M. Asaka and M. Obara 903 Growth and performance of AlGaAs/GaAs heterostructure bipolar transistors N. Nordell, B. Willén, C.-O.A. Olsson, U. Westergren and G. Landgren 909 AlGaAs/GaAs p-MODFET materials grown using intrinsic carbon doping J.S. Roberts, K.C. Singh, C.C. Button, J.P.R. David and J. Woodhead 915 MOVPE grown high performance 0.25 4m AlGaAs/InGaAs/GaAs pseudomorphic MODFETs A.G. Thompson, H.M. Levy, B.-Y. Mao, G. Martin and G.Y. Lee 921 Electrical and structural characterization of GaAs on InP grown by OMCVD,; application to GaAs MESFETs R. Azoulay, A. Clei, L. Dugrand, N. Draidia, G. Leroux and S. Biblemont 926 MOVPE of AllnAs HEMT structures * L. Aina, M. Mattingly, M. Serio and E. Martin 932 Pseudomorphic n-InGaP/InGaAs/GaAs grown by MOVPE for HEMT LSIs M. Takikawa, T. Ohori, M. Takechi, M. Suzuki and J. Komeno 942 Growth and characterization of double barrier resonant tunnelling diodes H. Tews, R. Neumann and R.D. Schnell 947 InAs—GaSb hot electron transistors grown by metalorganic chemical vapor deposition K. Taira, F. Nakamura, I. Hase, H. Kawai and Y. Mori 952 Ultralow doping profiles for applications in 3D integrated varactor tuned oscillators grown by MOVPE I. Gyuro, F. Scheffer, M. Joseph, B. Roth, M. Heuken and K. Heime 956 WORKSHOP ON MOMBE, CBE, GSMBE, AND RELATED TECHNIQUES Current status review and future prospects of CBE, MOMBE and GSMBE * W.T. Tsang 960 Growth mechanism studies in CBE/MOMBE * T. Martin, C.R. Whitehouse and P.A. Lane 969 Incorporation of group III and group V elements in chemical beam epitaxy of GalnAsP alloys * J.L. Benchimol, G. Le Roux, H. Thibierge, C. Daguet, F. Alexandre and F. Brillouet 978 Carbon incorporation in GaAs and AlGaAs grown by MOMBE using trimethylgallium * C.R. Abernathy 982 Selective growth of InP/GalnAs in LP-MOVPE and MOMBE/CBE * O. Kayser 989 Some comparisons of chemical beam epitaxy with gas source molecular beam epitaxy * G.J. Davies, P.J. Skevington, E.G. Scott, C.L. Franch and J.S. Foord 999 MOMBE (metalorganic molecular beam epitaxy) growth of InGaAlAsSb system on GaSb * H. Asahi, T. Kaneko, T. Okuno and S. Gonda 1009 Si and Ge gas-source molecular beam epitaxy (GSMBE) * M. Suemitsu, F. Hirose and N. Miyamoto Contents New starting materials for MOMBE * M. Weyers Gas-source MBE growth and n-type doping of AlGaAs using TEG, TEA, AsH, and Si,H, * T. Fuji, H. Ando, A. Sandhu, H. Ishikawa and Y. Sugiyama Surface chemistry of a new III-V MOCVD reactant: PhAsH, on GaAs(100) * * A. Schiitze, J. Zacheja, M. Weyers and D. Kohl Mechanistic aspects relating to the growth of Ga,In,_,As by CBE ** C.L. French, A.T.S. Wee, J.S. Foord and G.J. Davies Studies of the surface reactivity of novel hydride adduct precursors for CBE growth of III-V compounds * * J.S. Foord, A.J. Murrell, D. O'Hare, N.K. Singh, A.T.S. Wee and T.J. Whitaker Hydrogen-plasma and photo-effects on MOMBE of GaAs ** I. Suemune, K. Hamaoka, A. Kishimoto, T. Koui, Y. Honda and M. Yamanishi Doping of GaAs and InP in MOMBE using DEZn, TESn and DETe ** J. Musolf, D. Marx, A. Kohl, M. Weyers and P. Balk Applications of spectroellipsometry to the growth of GaAs and AlGaAs by metalorganic molecular beam epitaxy * * W.E. Quinn, D.E. Aspnes and S. Gregory In situ control of the growing surface in high vacuum MOVPE of GaAs ** J. Jénsson, K. Deppert, S. Jeppesen, G. Paulsson, L. Samuelson and P. Schmidt Selective growth of p*-GaAs by metalorganic molecular beam epitaxy * * N. Furuhata, H. Shimawaki and A. Okamoto Growth and diffusion study of carbon doped GaAs superlattice grown by chemical beam epitaxy ** T.H. Chiu, J.E. Cunningham, J.A. Ditzenberger and W.Y. Jan Correlation of carbon incorporation from TEG and effective V/III ratio on the surface in MOMBE grown GaAs ** M. Kamp, G. Moérsch, M. Weyers and H. Lith CBE growth of GalnAs—InP wafers for surface emitting lasers * * T.K. Uchida, T. Uchida, K. Mise, N. Yokouchi, F. Koyama and F. Iga Growth of GalnAs by chemical beam epitaxy * * J.F. Carlin, A. Rudra, R. Houdré, A. Staehli and M. Ilegems Monolayer epitaxial growth of GalnAs ternary by MOMBE ** H. Kawanishi and H. Ikeda On the growth of GalnAs by MOMBE (CBE) ** H. Heinecke, B. Baur, F. Héger, A. Miklis and B. Jobst CBE growth of InGaAs for optoelectronic applications * * F. Genova, G. Morello, G. Autore and L. Gastaldi The search for all-hydride MOMBE: examination of trimethylamine alane, trimethylamine gallane, and arsine * * D.A. Bohling, G.T. Muhr, C.R. Abernathy, A.S. Jordan, S.J. Pearton and W.S. Hobson The substrate—epitaxial interface of GaAs and InP grown by GSMBE ** K. Tappura, A. Salokatve, K. Rakennus, H. Asonen and M. Pessa Effects of surface pre-treatment and hydrogen on ALE of ZnSe on GaAs in MOMBE ** Y. Kawakami, T. Toyoda, Y.-H. Wu, Sz. Fujita and Sg. Fujita InGaAs MOMBE - system drift and material quality * * E. Woelk, M.E. Sherwin and G.O. Munns MOMBE growth of high quality GaAs/GalInP heterostructures * * Ph. Maurel, Ph. Bove, J.C. Garcia, J.P. Hirtz and M. Razeghi Author index 1077 Subject index

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Journal of Crystal Growth 1991: Vol 107 Table of Contents PDF

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Preview Journal of Crystal Growth 1991: Vol 107 Table of Contents

Contents Preface ix 5TH INTERNATIONAL CONFERENCE ON METALORGANIC VAPOR PHASE EPITAXY SECTION I. GROWTH MECHANISM AND REACTION KINETICS Detailed models of the MOVPE process * K.F. Jensen, D.1. Fotiadis and T.J. Mountziaris Gas phase studies of MOVPE by optical methods * W. Richter, P. Kurpas, R. Liickerath, M. Motzkus and R. Waschbiisch Thermal decomposition studies of group V hydrides P. Abraham, A. Bekkaoui, V. Souliére, J. Bouix and Y. Monteil Comparative pyrolysis studies of ethylarsines S.H. Li, C.A. Larsen and G.B. Stringfellow Surface science studies of MOVPE processes: a review of progress M.E. Pemble, D.S. Buhaenko, S.M. Francis, P.A. Goulding and J.T. Allen In situ monitoring of crystal growth by reflectance difference spectroscopy * E. Colas, D.E. Aspnes, R. Bhat, S.S. Studna, J.P. Harbison, L.T. Florez, M.A. Koza and V.G. Keramidas Surface processes during growth of GaAs by MOCVD L.J. Giling and M.H.J.M. de Croon In-situ monitoring of GaAs growth process in MOVPE by surface photo-absorption method N. Kobayashi, T. Makimoto, Y. Yamauchi and Y. Horikoshi 62 Reflectance-difference study of surface chemistry in MOVPE growth L. Samuelson, K. Deppert, S. Jeppesen, J. Jonsson, G. Paulsson and P. Schmidt 68 SECTION II. ATOMIC LAYER AND PULSED FLOW EPITAXY Atmospheric pressure atomic layer epitaxy: mechanisms and applications * P.D. Dapkus, B.Y. Maa, Q. Chen, W.G. Jeong and S.P. DenBaars Atomic layer epitaxy of Al,Ga,_, As and device quality GaAs J.R. Gong, P.C. Colter, D. Jung, S.A. Hussien, C.A. Parker, A. Dip, F. Hyuga, W.M. Duncan and S.M. Bedair High carbon doping of Al,Ga,_ , As (0 < x < 1) by atomic layer epitaxy for device applications B.-C. Chung, R.T. Green and H.F. MacMillan Ordered GalnP by atomic layer epitaxy B.T. McDermott, N.A. El-Masry, B.L. Jiang, F. Hyuga, S.M. Bedair and W.M. Duncan Pulsed jet epitaxy of III-V compounds * M. Ozeki, N. Ohtsuka, Y. Sakuma and K. Kodama GaAs epitaxy using alternate pulses in a standard LP-MOVPE reactor J. Wisser, P. Czuprin, D. Grundmann, P. Balk, M. Waschbiisch, R. Liickerath and W. Richter * Invited paper. Contents SECTION III. SELECTIVE AREA GROWTH Selective epitaxy of GaAs, Al,Ga,_,As, and In,Ga,_ ,As * T.F. Kuech, M.S. Goorsky, M.A. Tischler, A. Palevski, P. Solomon, R. Potemski, C.S. Tsai, J.A. Lebens and K.J. Vahala 116 Selective area epitaxy of GaAs on Si using atomic layer epitaxy by LP-MOVPE N.H. Karam, V. Haven, S.M. Vernon, N. El-Masry, E.H. Lingunis and N. Haegel 129 Patterned crystal growth of GaAs using laser scanning with atomic layer epitaxy S. Iwai, T. Meguro, Y. Aoyagi and T. Miyoshi 136 Selective embedded growth of GalnAs by low pressure MOVPE O. Kayser, B. Opitz, B. Westphalen, U. Niggebriigge, K. Schneider and P. Balk 141 Selective area MOVPE of GalnAs/InP heterostructures on masked and nonplanar (100) and {111} substrates Y.D. Galeuchet and P. Roentgen 147 Composition of selectively grown In ,Ga,_ , As structures from locally resolved Raman spectroscopy J. Finders, J. Geurts, A. Kohl, M. Weyers, B. Opitz, O. Kayser and P. Balk 151 Selective MOVPE of semi-insulating InP layers for high speed OEICs G. Laube, A. Nowitzki, K. Diitting and P. Speier 156 Non-planar MOVPE growth using a novel shadow-masking technique P. Demeester, L. Buydens, I. Moerman, D. Lootens and P. Van Daele 161 SECTION IV. GROWTH RELATED STUDIES IV.A. The role of reactors Layer uniformity in a multiwafer MOVPE reactor for III-V compounds * P.M. Frijlink, J.L. Nicolas and P. Suchet 166 Influence of gas mixing on the lateral uniformity in horizontal MOVPE reactors I. Moerman, G. Coudenys, P. Demeester, B. Turner and J. Crawley 175 Influence of gas mixing and expansion in horizontal MOVPE reactors N.J. Mason and P.J. Walker 181 Growth of extremely uniform III-V compound semiconductor layers by LP-MOVPE by application of the gas foil technique for substrate rotation D. Schmitz, G. Strauch, H. Jiirgensen and M. Heyen 188 Uniformity — optical properties of GalnP—GaAllInP layers grown by MOVPE M. Mpaskoutas, C. Morhaim, J.N. Patillon, J.P. André, A. Valster and J.J. Rusch 192 MOVPE growth of II-VI compounds in a vertical reactor with high-speed horizontal rotating disk G.S. Tompa, T. Salagaj, L. Cook, R.A. Stall, C.R. Nelson, P.L. Anderson, W.H. Wright, W.L. Ahlgren and S.M. Johnson 198 IV.B. Growth and characterization Etching of InP by HCl in an OMVPE reactor C. Caneau, R. Bhat, M. Koza, J.R. Hayes and R. Esagui 203 Plasma MOVPE of ternary and quaternary layers M. Behet, A. Brauers and P. Balk 209 The influence of growth conditions on the planarity of MOVPE grown GalInAs(P) interfaces P.C. Spurdens, M.R. Taylor, M. Hockly and M.J. Yates 215 Effect of wafer cleavage on composition of InGaAsP grown on InP by low pressure MOCVD D.G. Knight, C.J. Miner and B. Watt 221 Lateral and longitudinal patterning of semiconductor structures by crystal growth on nonplanar and dielectric-masked GaAs substrates: application to thickness-modulated waveguide structures E. Colas, A. Shahar, B.D. Soole, W.J. Tomlinson, J.R. Hayes, C. Caneau and R. Bhat 226 Step-flow growth and fractional-layer superlattices on (111)B GaAs vicinal surfaces T. Fukui and H. Saito 231 Strong enhancement of band edge PL intensity and improved morphology for AlGaAs grown on lenticular GaAs substrates by low pressure MOVPE E.S. Johnson Contents Direct evidence of lateral bandgap patterning on stepped structures grown on non-planar, vicinal GaAs surfaces by cathodoluminescence investigations E. Colas, E.M. Clausen, Jr., E. Kapon, D.M. Hwang, S. Simhony, R. Bhat, C.Y. Chen, P.S.D. Lin, L. Schiavone and B. Van der Gaag 243 Infrared spectroscopic determination of substitutional carbon in MOVPE grown films of GaAs A.V. Annapragada, K.F. Jensen and T.F. Kuech 248 IV.C. Doping Doping level anomalies resulting from exposure to dopant precursors during cooling in MOVPE S. Cole, L. Davis, W.J. Duncan, E.M. Marsh, R.H. Moss, W.J.M. Rothwell, P.J. Skevington and G.D.T. Spiller 254 Silicon spike-doping of GaAs with AP-MOVPE P. Schmidt, K. Deppert and H. Kostial 259 The influence of substrate orientation and mis-orientation on the Si-doping of GaAs grown by MOVPE X. Tang, J. te Nijenhuis, Y. Li and L.J. Giling 263 Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy M.A. Tischler, R.M. Potemski, T.F. Kuech, F. Cardone, M.S. Goorsky and G. Scilla 268 On the “tunnel” diffusion of iron dopant in InP E.W.A. Young and G.M. Fontijn 274 Carbon doping exceeding 107° cm~* in GaAs grown by AP-MOVPE ** M.C. Hanna, Z.H. Lu, E.W. Mao, T. McCormick, E.G. Oh, A. Majerfeld and D.M. Szmyd 279 SECTION V. NEW PRECURSORS FOR III-V AND II-VI COMPOUNDS V.A. Synthesis and properties Alternative precursors for III-V MOVPE criteria for evaluation * A. Brauers 281 Alternative Group V precursors for CVD applications * R.M. Lum and J.K. Klingert 290 Precursors for II-VI semiconductors: requirements and developments * A.C. Jones, P.J. Wright and B. Cockayne 297 Physical properties of non-pyrophoric group III precursors for MOVPE L. Pohl, M. Hostalek, H. Schumann, U. Hartmann, W. Wassermann, A. Brauers, G.K. Regel, R. Hével, P. Balk and F. Scholz 309 Detection of phenylarsine in air J. Zacheja, A. Schiitze, A. Brauers and D. Kohl 314 Screening of organotellurium compounds for use as MOVPE precursors J.E. Hails and S.J.C. Irvine 319 Synthesis and decomposition studies of dialkyltellurides of type RTeR’ A.E.D. McQueen, P.N. Culshaw, J.C. Walton, D.V. Shenai-Khatkhate, D.J. Cole-Hamilton and J.B. Mullin 325 V.B. Growth with new precursors Epitaxial growth of GaAs with (C,H,),GaCl and AsH, in a hot-wall system N.I. Buchan, T.F. Kuech, M.A. Tischler and R. Potemski 331 Growth of GaAs by MOCVD using a solid arsenic source R. Pefia-Sierra, J.G. Castro-Zavala and A. Escobosa 337 Control of residual impurity incorporation in tertiarybutylarsine-grown GaAs G. Haacke, S.P. Watkins and H. Burkhard 342 Trisdimethylaminoarsine as As source for the LP-MOVPE of GaAs ** M.H. Zimmer, R. Hével, W. Brysch, A. Brauers and P. Balk 348 ** Extended abstract. Contents Growth of low carbon content Al Ga, _, As by reduced pressure MOVPE using trimethylamine alane * * A.C. Jones and S.A. Rushworth Growth of GalnP over the whole composition range by OMVPE using tertiarybutylphosphine for the phosphorus source Y. Takeda, S. Araki, M. Takemi, S. Noda and A. Sasaki Growth of InP with novel In and P precursors R. Hével, N. Brianese, A. Brauers, P. Balk, M. Zimmer, M. Hostalek and L. Pohl Atmospheric-pressure MOVPE growth of InP using Lewis base monovalent cyclopentadienyl indium K. Onuma, A. Kasahara, K. Kato, N. Aihara and T. Udagawa Novel liquid precursors for the growth of InP and GalnAs epitaxial layers by MOVPE F. Scholz, A. Molassioti, M. Moser, B. Notheisen, K. Streubel, M. Hostalek and L. Pohl MOVPE growth of uniform AlGaAs and InGaAs using organoarsine with inverted-horizontal atmospheric-pressure reactor T. Kikkawa, H. Tanaka and J. Komeno MOVPE of AIN and GaN by using novel precursors K.-L. Ho, K.F. Jensen, J.-W. Hwang, W.L. Gladfelter and J.F. Evans Transition metal doping of LP-MOCVD-grown InP T. Wolf, A. Krost, D. Bimberg, F. Reier, P. Harde, J. Winterfeld and H. Schumann 381 Purity of zinc precursors and the properties of epitaxial ZnSe grown by atmospheric pressure metalorganic chemical vapour deposition H.M. Yates and J.O. Williams 386 MOVPE of ZnSe using organometallic allyl selenium precursors S. Patnaik, K.F. Jensen and K.P. Giapis SECTION VI. GROWTH OF III-V STRUCTURES VLA. Lattice matched heterostructures Growth of GalnAs bulk mixed crystals as a substrate with a tailored lattice parameter * H.-J. Sell 396 High quality Al,Ga,_,_,In,P alloys grown by MOVPE on (311)B GaAs substrates A. Valster, C.T.H.F. Liedenbaum, M.N. Finke, A.L.G. Severens, M.J.B. Boermans, D.E.W. Vandenhoudt and C.W.T. Bulle-Lieuwma 403 Hetero-epitaxy of ZnSiAs,/GaAs grown by atmospheric pressure MOVPE N. Achargui, A. Benachemhou, A. Fourcaran, G. Bougnot, P. Coulon, J.P. Laurenti and J. Camassel 410 OMVPE growth and characterization of Bi-containing III-V alloys K.Y. Ma, Z.M. Fang, R.M. Cohen and G.B. Stringfellow 416 GaSb/InAs heterojunctions grown by MOVPE S.K. Haywood, R.W. Martin, N.J. Mason, R.J. Nicholas and PJ. Walker 422 Investigation of MOCVD growth of Al Ga,_ , As/GaAs and Al ,Ga,_ ,As/GaAs/ Al,Ga,_ ,As/GaAs multilayer structures with high Al content Gao Hongkai, Yun Feng, Zhang Jikang, Hou Xun and Gong Ping 428 Optical and electrical properties of the Al ,Ga,_ ,As/GaAs single heterojunctions grown by low pressure MOVPE F.E.G. Guimaraes, I. Gyuro, F. Scheffer, M. Heuken and K. Heime Low contact-resistance GaAs/AlGaAs regrowth interfaces and compositional grading layer formation during growth by metalorganic vapor phase epitaxy K. Hiruma, T. Haga, T. Usagawa and A. Ihara Growth of highly uniform, reproducible InGaAs films in a multiwafer rotating disk reactor by MOCVD M.A. McKee, P.E. Norris, R.A. Stall, G.S. Tompa, C.S. Chern, D. Noh, S.S. Kang and T_J. Jasinski Scanning transmission electron microscopy of heterointerfaces grown by metalorganic vapor phase epitaxy (MOVPE) H. Lakner, B. Bollig, E. Kubalek, M. Heuken, K. Heime, F. Scheffer and F.E.G. Guimaraes 452 VI.B. Strained layers and alternative substrates MOVPE growth and characterization of strained layers * M.-E. Pistol, A. Gustafsson, M. Gerling, L. Samuelson and H. Titze 458 Surface morphology improvement of GaAs-on-Si using a two-reactor MOCVD system and an AlAs/GaAs low temperature buffer layer: an approach to crack-free GaAs-on-Si T. Nishimura, K. Kadoiwa, N. Hayafuji, M. Miyashita, K. Mitsui, H. Kumabe and T. Murotani Contents MOCVD growth of GaAs on Si using (Al,In)GaAs/GaAs buffer layer K. Fujita, Y. Shiba and K. Asai 473 Very low dislocation density GaAs on Si using superlattices grown by MOCVD T. Soga, H. Nishikawa, T. Jimbo and M. Umeno 479 Optical quality improvement of MOVPE grown GaAlAs/GaAs double heterostructures on silicon substrates N. Draidia, R. Azoulay, L. Dugrand, A.C. Papadopoulo, Y. Gao, B. Sermage, P. Ossart and J. Meddeb 483 High quality GaAs on Si using Sig 94Gep 9,/Ge buffer layers R. Venkatasubramanian, M.L. Timmons, J.B. Posthill, B-M. Keyes and R.K. Ahrenkiel 489 LP-MOVPE growth of antiphase domain free InP on (001) Si using low temperature processing * * M. Grundmann, A. Krost and D. Bimberg 494 Critical layer thickness of MOVPE-grown GaAs on In,Ga,_ , As J. te Nijenhuis, PJ. van der Wel, R.W.F. van Asten, P.R. Hageman and L.J. Giling 496 Improvement of the crystalline, optical and electrical quality of MOVPE GalnSb layers G. Bougnot, F. Delannoy, F. Pascal, P. Grosse, A. Giani, J. Kaoukab, J. Bougnot, R. Fourcade, P.J. Walker, N.J. Mason and H. Lambert 502 MOVPE growth of GaN on a misoriented sapphire substrate K. Hiramatsu, H. Amano, I. Akasaki, H. Kato, N. Koide and K. Manabe 509 MOVPE growth of GaP and GaAs_P,_ , on (111)-oriented GaP H. Titze, M. Gerling, M.-E. Pistol and L. Samuelson 513 Absorption characteristics of GaSb/InAs and InSb/InAs SLSs grown on (111) GaAs by MOVPE ** M. Lakrimi, N.J. Mason, R.J. Nicholas, G.B. Stringfellow, G. Summers and P.J. Walker 518 VLC. Quantum wells Growth and analysis of quantum well structures * D. Griitzmacher 520 Temperature resolved photoluminescence investigations on InGaAs/InP MQWs R. Schwedler, F. Reinhardt, D. Griitzmacher and K. Wolter 531 Effect of growth parameters on the interfacial structure of GalnAs/InP quantum wells J. Hergeth, D. Griitzmacher, F. Reinhardt and P. Balk 537 Finite interface effects for thin GalnAs/InP quantum wells grown by LP-MOVPE with a growth interruption sequence J. Camassel, J.P. Laurenti, S. Juillaguet, F. Reinhardt, K. Wolter, H. Kurz and D. Griitzmacher 543 Lateral and vertical composition control in MOCVD-grown InP/GalInAs(P) structures C.G. Cureton, E.J. Thrush and A.T.R. Briggs 549 Determination of the band discontinuity of MOCVD grown In,_,Ga,As/In,_,Al,As heterostructures with optical and structural methods J. Béhrer, M. Grundmann, U. Lienert, D. Bimberg, H. Ishikawa, M. Kamada and N. Watanabe 555 MOVPE of In(GaAs)P/ InGaAs MQW structures P. Wiedemann, M. Klenk, W. Kérber, U. Koerner, R. Weinmann, E. Zielinski and P. Speier 561 OMVPE growth of GalnAs/InP and GalnAs/GalnAsP quantum wells H. Kamei and H. Hayashi 567 Influence of the gas switching sequence on the optical properties of ultrathin InGaAs/InP quantum wells G. Landgren, P. Ojala and O. Ekstrém 573 MOVPE growth and optical properties of AlGaInP/GalInP strained single quantum ve structures M. Kondo, K. Domen, C. Anayama, T. Tanahashi and K. Nakajima 578 Investigation of In,Ga,_ ,As/GaAs strained quantum well structures grown on non-planar substrates byM OCVD P. Grodzinski, Y. Zou, J.S. Osinski and P.D. Dapkus 583 Patterning and overgrowth of nanostructure quantum well wire arrays by LP-MOVPE N.H. Karam, A. Mastrovito, V. Haven, K. Ismail, S. Pennycook and H.I. Smith 591 SECTION VII. II-VI SEMICONDUCTORS VILA. Narrow gap 11 —VI semiconductors MOVPE of narrow band gap II-VI materials * R. Triboulet Contents The growth of CMT on GaAs for high quality linear arrays of MWIR and LWIR photodiodes L.M. Smith, C.F. Byrne, D. Patel, P. Knowles, J. Thompson, G.T. Jenkin, T. Nguyen Duy, A. Durand and M. Bourdillot 605 Low temperature MOCVD of Hg, _ ,Cd,Te on 311, 511, 711 and shaped GaAs G.N. Pain, C. Sandford, G.K.G. Smith, A.W. Stevenson, D. Gao, L.S. Wielunski, S.P. Russo, G.K. Reeves and R. Elliman 610 Reaction measurements and growth of HgTe/CdTe by photo-assisted MOCVD using an excimer laser Y. Fujita, T. Terada, S. Fujii and T. Iuchi 621 Low temperature growth of (Cd,Hg)Te layers by MOVPE F. Desjonquéres, A. Tromson-Carli, P. Cheuvart, R. Druilhe, C. Grattepain, A. Katty, Y. Marfaing, R. Triboulet and D. Lorans 626 HRTEM studies of defects and interdiffusion in Hg, _,_,Mn,Cd,Te (0 < x, y < 1) grown by low temperature MOCVD G.N. Pain, C.J. Rossouw, S.R. Glanvill, R.S. Rowe, R.S. Dickson, G.B. Deacon and B.O. West 632 VII.B. Wide gap II-VI semiconductors MOVPE growth of wide bandgap II-VI materials * H. Kukimoto 637 Surface photochemical reactions for alkyl group elimination from precursors in OMVPE Sz. Fujita, S. Maruo, H. Ishio, P.A. Murawala and Sg. Fujita The effects of photo-assisted MOCVD on the doping of Na acceptors into ZnS epitaxial layers T. Ohno and T. Taguchi Effects of Ar ion laser irradiation on MOVPE of ZnSe using DMZn and DMSe as reactants A. Yoshikawa, T. Okamoto and T. Fujimoto High quality over-epilayer growth of ZnSe on Li*-implanted ZnSe epilayers by atmospheric pressure MOVPE T. Yodo, K. Ueda, K. Morio, K. Yamashita and S. Tanaka MOVPE growth and characterisation of CdTe on CdS single crystal substrates M.Y. Simmons, P.D. Brown and K. Durose Raman characterization of ZnSe/GaAs MOVPE heterostructures O. Pagés, M. Renucci, O. Briot, N. Tempier and R.L. Aulombard Properties of Zn, _ ,Cd,S ternary and Zn,_ ,Cd,S,_ Se, quaternary thin films on GaAs grown by OMVPE Sz. Fujita, S. Hayashi, M. Funato, T. Yoshie and Sg. Fujita Doping of nitrogen in ZnSe films: improved doping properties in ZnSe/ZnSSe periodic layered structures grown on GaAs by MOVPE I. Suemune, H. Masato, K. Nakanishi, Y. Kuroda and M. Yamanishi 679 SECTION VIII. HIGH 7, SUPERCONDUCTORS AND OXIDES MOCVD superconducting oxide films * T. Hirai and H. Yamane 683 Fabrication and characterization of Bi-Sr-Ca—Cu-—O MOCVD thin films T. Sugimoto, M. Yoshida, K. Yamaguchi, Y. Yamada, K. Sugawara, Y. Shiohara and S. Tanaka 692 In-situ growth of YBCO high-7, superconducting thin films by plasma-enhanced metalorganic chemical vapor deposition J. Zhao, C.S. Chern, Y.Q. Li, D.W. Noh, P.E. Norris, P. Zawadzki, B. Kear and B. Gallois 699 Preparation of properties of superconducting Bi-Sr-Ca—Cu-—O thin films on polycrystalline silver substrates by organome- tallic chemical vapor deposition J.M. Zhang, B.W. Wessels, D.S. Richeson and T.J. Marks 705 Preparation and properties of Ba-deficient superconducting thin Y-Ba—Cu-—O films * * J. Souc, D. Machajdik, V. Smatko, V. Strbik, K. Fréhlich, S. Hrib, S. Stefanik, P. Kordos and J. Ivan 710 Growth studies of ferroelectric oxide layers prepared by organometallic chemical vapor deposition L.A. Wills, W.A. Feil, B.W. Wessels, L.M. Tonge and T.J. Marks 712 SECTION IX. DEVICES IX.A. Lasers Quantum wire lasers by OMCVD growth on nonplanar substrates * R. Bhat, E. Kapon, S. Simhony, E. Colas, D.M. Hwang, N.G. Stoffel and M.A. Koza Contents MOVPE of AlGalnP /GalnP heterostructures for visible lasers * P. Roentgen, W. Heuberger, G.L. Bona and P. Unger 724 Structures for improved 1.5 jm wavelength lasers grown by LP-OMVPE; InGaAs~—InP strained-layer quantum wells a good candidate * P.J.A. Thijs, E.A. Montie and T. van Dongen 731 Metalorganic chemical vapor deposition of InGaAs-GaAs-AlGaAs strained-layer quantum well lasers * P.K. York, K.J. Beernink, J. Kim, J.J. Alwan, J.J. Coleman and C.M. Wayman 741 Reproducible growth of narrow linewidth multiple quantum well graded index separate confinement distributed feedback (MQW-GRIN-SCH-DFB) lasers by MOVPE T. Tanbun-Ek, R.A. Logan, H. Temkin, N.A. Olsson, M.C. Wu, A.M. Sergent and K.W. Wecht 751 Room temperature low threshold CW operation of MOCVD-grown AlGaAs/GaAs SQW lasers on Si substrates with SiO, back-coating T. Egawa, H. Tada, Y. Kobayashi, T. Soga, T. Jimbo and M. Umeno 757 Low threshold 1.5 74m SCH-MQW lasers by atmospheric pressure MOVPE and direct comparison of low versus atmospheric pressure MOVPE laser growth A. Ougazzaden, J.-D. Ganiére, Y. Gao, E.V.K. Rao, B. Sermage, C. Kazmierski and A. Mircea 761 A new selective MOVPE regrowth process utilizing in-situ vapor phase etching for optoelectronic integrated circuits K. Shimoyama, Y. Inoue, M. Katoh, H. Gotoh, Y. Suzuki and H. Yajima 767 Orientation dependence of S, Zn, Si, Te, and Sn doping in OMCVD growth of InP and GaAs: application to DH lasers and lateral p—n junction arrays grown on non-planar substrates R. Bhat, C. Caneau, C.E. Zah, M.A. Koza, W.A. Bonner, D.M. Hwang, S.A. Schwarz, S.G. Menocal and F.G. Favire Interaction of the dopants Mg and Si in Al Ga,_ , As/GaAs heterolayers (MOVPE): application to DQW laser structures L. Korte, R. Treichler, M. Schreiber, Ch. Tanner, G. Kristen, C. Hanke and G. Weimann Growth and assessment of InGaAs/InGaAlAs/InP multiple quantum well lasers R.W. Glew, P.D. Greene, G.D. Henshall, C. Lowney, J.P. Stagg, J.E.A. Whiteaway, B. Garrett and A.G. Norman In, 47Gay 5;As—InP heterostructures for vertical cavity surface emitting lasers at 1.65 wm wavelength R.D. Dupuis, D.G. Deppe, C.J. Pinzone, N.D. Gerrard, S. Singh, G.J. Zydzik, J.P. van der Ziel and C.A. Green 790 Strained-layer InGaAs/ InGaAsP MQW structures and their application to 1.67 um lasers grown by metalorganic vapor phase epitaxy M. Yamamoto, M. Oishi, H. Sudo, J. Nakano and N. Tsuzuki 796 Lasing characteristics of InGaAs/ InGaAsP MQW structures grown by low-pressure MOVPE M. Rosenzweig, W. Ebert, D. Franke, N. Grote, B. Sartorius and P. Wolfram 802 IX.B. Optoelectronic devices and circuits InP based optoelectronics * N. Pitz Selective MOVPE growth of GaAs on Si and its applications to LEDs A. Ackaert, P. Demeester, L. Buydens, G. Coudenys, P. Van Daele and M. Renaud Improvement of InP crystal quality grown on GaAs substrates and device applications Tatsuya Kimura, Tadashi Kimura, E. Ishimura, F. Uesugi, M. Tsugami, K. Mizuguchi and T. Murotani GaAs/GaAlAs surface emitting IR LED with Bragg reflector grown by MOCVD T. Kato, H. Susawa, M. Hirotani, T. Saka, Y. Ohashi, E. Shichi and S. Shibata Improving the performance of InAs, _ .Sb,/InSb infrared detectors grown by metalorganic chemical vapor deposition R.M. Biefeld, J.R. Wendt and S.R. Kurtz Two-step MOVPE growth for planar InP/InGaAs/InP pin- FET combinations with locally diffused buffer layer G. Ebbinghaus, R. Strzoda, T. Scherg, H. Albrecht, R. Penz and C. Lauterbach Growth and characterization of AlGaAs/GaAs quantum well structures for the fabrication of long wavelength infrared detectors Z.F. Paska, J.Y. Andersson, L. Lundqvist and C.-O.A. Olsson Application of AP MOVPE to a new butt-coupling scheme B. Rose, D. Remiens, V. Hornung and D. Robein High optical and electrical quality GalnAs/InP, GaAs/InP double heterostructures for optoelectronic integration J.P. André, J.N. Patillon, P. Riglet, J.Y. Lesiourd, H. Le Coz and B.G. Martin The use of InP-based semiconductor reflective stacks for enhanced device performance J. Thompson, A.K. Wood, A.J. Moseley, M.Q. Kearley, P.J. Topham, N. Maung and N. Carr XVIil Contents LP-MOVPE growth and characterization of wide-gap InGaAsP/InP layers (A, < 1.2 um) for optical waveguide applications F.W. Reier, P. Harde and H. Kaiser 867 A novel technique for the preservation of gratings in InP and InGaAsP and for the simultaneous preservation of InP, InGaAs, and InGaAsP in OMCVD R. Bhat, M.A. Koza, C.E. Zah, C. Caneau, C.C. Chang, S.A. Schwarz, A.S. Gozdz, P.S.D. Lin and A. Yi-Yan 871 A new approach for the integration of optoelectronic devices using laser selective area epitaxy H. Liu, J.C. Roberts, J. Ramdani, S.M. Bedair, J. Farari, J.P. Vilcot and D. Decoster 878 [X.C. Electronic devices High frequency AlGaAs/GaAs heterojunction bipolar transistors: the role of MOVPE * G. Packeiser, H. Tews and P. Zwicknagl 883 Qualification of OMVPE AlGaAs/GaAs HBT structures using nondestructive photoreflectance spectroscopy N. Bottka, D.K. Gaskill, P.D. Wright, R.W. Kaliski and D.A. Williams 893 MOVPE growth of highly zinc-doped bases for GaAs/AlGaAs heterojunction bipolar transistors S. Tanaka, M. Ohkubo, M. Irikawa and T. Kikuta 898 LPMOCVD growth of C doped GaAs layers and AlGaAs/GaAs heterojunction bipolar transistors Y. Ashizawa, T. Noda, K. Morizuka, M. Asaka and M. Obara 903 Growth and performance of AlGaAs/GaAs heterostructure bipolar transistors N. Nordell, B. Willén, C.-O.A. Olsson, U. Westergren and G. Landgren 909 AlGaAs/GaAs p-MODFET materials grown using intrinsic carbon doping J.S. Roberts, K.C. Singh, C.C. Button, J.P.R. David and J. Woodhead 915 MOVPE grown high performance 0.25 4m AlGaAs/InGaAs/GaAs pseudomorphic MODFETs A.G. Thompson, H.M. Levy, B.-Y. Mao, G. Martin and G.Y. Lee 921 Electrical and structural characterization of GaAs on InP grown by OMCVD,; application to GaAs MESFETs R. Azoulay, A. Clei, L. Dugrand, N. Draidia, G. Leroux and S. Biblemont 926 MOVPE of AllnAs HEMT structures * L. Aina, M. Mattingly, M. Serio and E. Martin 932 Pseudomorphic n-InGaP/InGaAs/GaAs grown by MOVPE for HEMT LSIs M. Takikawa, T. Ohori, M. Takechi, M. Suzuki and J. Komeno 942 Growth and characterization of double barrier resonant tunnelling diodes H. Tews, R. Neumann and R.D. Schnell 947 InAs—GaSb hot electron transistors grown by metalorganic chemical vapor deposition K. Taira, F. Nakamura, I. Hase, H. Kawai and Y. Mori 952 Ultralow doping profiles for applications in 3D integrated varactor tuned oscillators grown by MOVPE I. Gyuro, F. Scheffer, M. Joseph, B. Roth, M. Heuken and K. Heime 956 WORKSHOP ON MOMBE, CBE, GSMBE, AND RELATED TECHNIQUES Current status review and future prospects of CBE, MOMBE and GSMBE * W.T. Tsang 960 Growth mechanism studies in CBE/MOMBE * T. Martin, C.R. Whitehouse and P.A. Lane 969 Incorporation of group III and group V elements in chemical beam epitaxy of GalnAsP alloys * J.L. Benchimol, G. Le Roux, H. Thibierge, C. Daguet, F. Alexandre and F. Brillouet 978 Carbon incorporation in GaAs and AlGaAs grown by MOMBE using trimethylgallium * C.R. Abernathy 982 Selective growth of InP/GalnAs in LP-MOVPE and MOMBE/CBE * O. Kayser 989 Some comparisons of chemical beam epitaxy with gas source molecular beam epitaxy * G.J. Davies, P.J. Skevington, E.G. Scott, C.L. Franch and J.S. Foord 999 MOMBE (metalorganic molecular beam epitaxy) growth of InGaAlAsSb system on GaSb * H. Asahi, T. Kaneko, T. Okuno and S. Gonda 1009 Si and Ge gas-source molecular beam epitaxy (GSMBE) * M. Suemitsu, F. Hirose and N. Miyamoto Contents New starting materials for MOMBE * M. Weyers Gas-source MBE growth and n-type doping of AlGaAs using TEG, TEA, AsH, and Si,H, * T. Fuji, H. Ando, A. Sandhu, H. Ishikawa and Y. Sugiyama Surface chemistry of a new III-V MOCVD reactant: PhAsH, on GaAs(100) * * A. Schiitze, J. Zacheja, M. Weyers and D. Kohl Mechanistic aspects relating to the growth of Ga,In,_,As by CBE ** C.L. French, A.T.S. Wee, J.S. Foord and G.J. Davies Studies of the surface reactivity of novel hydride adduct precursors for CBE growth of III-V compounds * * J.S. Foord, A.J. Murrell, D. O'Hare, N.K. Singh, A.T.S. Wee and T.J. Whitaker Hydrogen-plasma and photo-effects on MOMBE of GaAs ** I. Suemune, K. Hamaoka, A. Kishimoto, T. Koui, Y. Honda and M. Yamanishi Doping of GaAs and InP in MOMBE using DEZn, TESn and DETe ** J. Musolf, D. Marx, A. Kohl, M. Weyers and P. Balk Applications of spectroellipsometry to the growth of GaAs and AlGaAs by metalorganic molecular beam epitaxy * * W.E. Quinn, D.E. Aspnes and S. Gregory In situ control of the growing surface in high vacuum MOVPE of GaAs ** J. Jénsson, K. Deppert, S. Jeppesen, G. Paulsson, L. Samuelson and P. Schmidt Selective growth of p*-GaAs by metalorganic molecular beam epitaxy * * N. Furuhata, H. Shimawaki and A. Okamoto Growth and diffusion study of carbon doped GaAs superlattice grown by chemical beam epitaxy ** T.H. Chiu, J.E. Cunningham, J.A. Ditzenberger and W.Y. Jan Correlation of carbon incorporation from TEG and effective V/III ratio on the surface in MOMBE grown GaAs ** M. Kamp, G. Moérsch, M. Weyers and H. Lith CBE growth of GalnAs—InP wafers for surface emitting lasers * * T.K. Uchida, T. Uchida, K. Mise, N. Yokouchi, F. Koyama and F. Iga Growth of GalnAs by chemical beam epitaxy * * J.F. Carlin, A. Rudra, R. Houdré, A. Staehli and M. Ilegems Monolayer epitaxial growth of GalnAs ternary by MOMBE ** H. Kawanishi and H. Ikeda On the growth of GalnAs by MOMBE (CBE) ** H. Heinecke, B. Baur, F. Héger, A. Miklis and B. Jobst CBE growth of InGaAs for optoelectronic applications * * F. Genova, G. Morello, G. Autore and L. Gastaldi The search for all-hydride MOMBE: examination of trimethylamine alane, trimethylamine gallane, and arsine * * D.A. Bohling, G.T. Muhr, C.R. Abernathy, A.S. Jordan, S.J. Pearton and W.S. Hobson The substrate—epitaxial interface of GaAs and InP grown by GSMBE ** K. Tappura, A. Salokatve, K. Rakennus, H. Asonen and M. Pessa Effects of surface pre-treatment and hydrogen on ALE of ZnSe on GaAs in MOMBE ** Y. Kawakami, T. Toyoda, Y.-H. Wu, Sz. Fujita and Sg. Fujita InGaAs MOMBE - system drift and material quality * * E. Woelk, M.E. Sherwin and G.O. Munns MOMBE growth of high quality GaAs/GalInP heterostructures * * Ph. Maurel, Ph. Bove, J.C. Garcia, J.P. Hirtz and M. Razeghi Author index 1077 Subject index

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