Journal of JVSTB Vacuum Science Second Series & Technology B Volume 17, Number 4 July/August 1999 Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Papers from the 26th Conference on the Physics and Chemistry of Semiconductor Interfaces An official journal of the American Vacuum Society Published by the Society through the American Institute of Physics The perfmectm for reducing has been right our A revolutionary ceramic diaphragm gives our new CDG superior performance—at lower cost. Old-fashioned metal-diaphragm CDGs are about to get a wake-up call. Our new CDG uses a remarkable aluminum oxide ceramic diaphragm to produce measurements with superior accuracy and repeatability. Even small temperature changes affect metal diaphragms, creating zero drift that can dramatically impact a CDG's accuracy. Alumina ceramic cuts temperature-induced zero drift by almost 90%. Ceramic is also more rigid than metal, so it's not deformed by repeated pressure cycling or over- pressure. This further decreases zero drift and shortens the time needed for readings to stabilize during I each process cycle, as well as eliminating the need for isolation valves. In addition, ceramic has nearly perfect corrosion resistance-—so our CDG maintains its superior repeatability through every process. It is also fully compatible with existing installations. You'd expect a CDG with such dramatically improved performance to cost more, but it actually costs less. And because it needs so little maintenance, it keeps on costing less. f a CDG that delivers better repeatability, lower zero drift and lower cost of ownership sounds like your cup of tea, call us today. Now with DeviceNet™! fl!!& LEYBOLDINFICON The Instrumental Difference1" United States France Netherlands Korea Phone:315 434-1100 Phone: +33 01 69 824800 Phone: +31 0348 577411 Phone:+82 02 270 1330 Fax: 315 437-3803 Fax: +33 01 69 075738 Fax: +31 0347 420489 Fax: +82 02 277 5322 Germany United Kingdom Japan Taiwan Phone: +49 221 347-0 Phone:+44 0181 9717000 Phone:+81 045 471 3311 Phone:+886 3 5615156 Fax: +49 221347-1250 Fax: +44 01819717005 Fax: +81 045 471 3323 Fax: +886 3 5618112 Visit our websile lor other sales offices worldwide, http://www.leyboldinficon.com E-mail: [email protected] "DeviceNet is a trademark of the Open DeviceNet Vendor Association, Inc. 1 REPORT DOCUMENTATION PAGE Form Approved OMB No. 0704-0183 uj»n mgn.va/, wie ift4, ari.ngton. /A ^20;.430j, jnd to the o-i,.-..,)( '.u.Myen-er... ,nj 3ud.;-st. •> iper.vor« Reduction Project (0/04-0 '38). Washington, DC 20503 1. AGENCY USE ONLY (Leave blank) 2. REPORT OATE 3. REPORT TYPE AND DATES COVERED 27 January 2000 Final 01 0ct 98 through 30 Sep 99 4. TITLE AND SU3TITLE 5. FUNOING NUMBERS Final Report: Twenty-sixth Annual Conference on the Physics and G: N00014-99-1-0145 Chemistry of Semiconductor Interfaces 6. AUTHOR(S) ~ —— C. R. Schulte 7. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) 8. PERFORMING ORGANIZATION •Institute for Postdoctoral Studies REPORT NUMBER P. 0. Box 36 Scottsdale, AZ 85252-0036 Fl-1999 9. SPONSORING/MONITORING AGENCY NAME(S) AND ADDRESSES) 10. SPONSORING/MONITORING Office of Naval Research AGENCY REPORT NUMBER ATTN: 0NR 251: Elizabeth L. Ford Ballston Tower One 800 North Quincy Street Arlington, VA 22217-5660 CFDA No. 12.300 11. SUPPLEMENTARY NOTES The view, opinions and/or findings contained in this report are those of the author(s) and should not be construed as an official Office of Naval Research r;—portion» policy, or decision, unless so designated bv other documentation 12a. DISTRIBUTION /AVAILABILITY STATEMENT Ö Y ■ - - - r°?^e_ni:^ I0*1' 12b. DISTRIBUTION CODE Approved for public release 13. ABSTRACT (Maximum 200 words) The Twenty-sixth Annual Conference on the Physics and Chemistry of Semiconductor Interfaces was held in San Diego, California, and the enclosed report contains abstracts of papers presented. 14. SUBJECT TERMS ~~ 15. NUMBER OF PAGES 182 Semiconductor Interfaces 16. PRICE CODE 17. OSEF CRUERPITOYR TC LASSIFICATION 18. OSEF CTUHRIIST YP ACGLEA SSIFICATION 19. OSEF CAUBRSITTYR ACCLTA SSIFICATION 20. LIMITATION OF ABSTRACT Unclassified Unclassified Unclassified UL NSN 7540-01-280-5500 DTIC QUALITY BJSE2GT2D 4 Standard Form 298 (Rev 2-89) Prescribed by ANSI Sio iit-'i THE BEST NAME FOR TOP QUALITY VACUUM TECHNOLOGY AT THE BEST BOTTOM LINE COST Hydaulic Hoist lift for sample loading Embedded water cooling flange SiC oxidation resistant sample heater w/rotational & linear motion Contour bottom for Sputter Cathodes 4" Sputter head w/ individual shutter Electro-polish chamber 2 kW DC Sputter Power INNOVAC SPUTTER SYSTEM - Under $WOk WHVAND HV COMPATIBLE UHVCOMPAflBI£ MAGNETRON SPUTTER HEAD. SiC OXYGEN 2" SPUTTER WITH RESISTANT HEATER 2 KW DC POWER IS $5,500. WITH A 900X SAMPLE TEMPERATURE GUARANTEE. CUSTOM PVD & CVD DEPOSITION SYSTEMS. u Call toll free 877-877-1556 Visit our web site INNOVAC www.innovaccum.com INNOVATION IN VACUUM COMPONENTS & SYSTEMS NORTH AMERICAN HEADQUARTERS: 50 Harrison St., Hoboken, NJ 07030, USA • Tel: 201-963-5450 • Fax: 201-963-5449 Journal of Vacuum Science JVSTB ISSN: 0734-211X CODEN: JVTBD9 & Technology B Microelectronics and Nanometer Structures American Processing, Measurement, and Phenomena Vacuum Society Editor: G. E. McGuire, MCNC, Research Triangle Park, NC 27709. Telephone: (919) 248-1910 Supervisor Editorial Office: Rebecca York, Editorial Assistant: Mary P. Hipsher, Officers Journal of Vacuum Science and Technology, Caller Box 13994, 10 Park Plaza, Ste. 4A, Research Triangle Park, NC 27709, Telephone: (919) 361-2787 and (919) 361-2342; FAX: (919) 361-1378; E-mail: [email protected] Stephen Rossnagel, President IBM T. J. Watson Research Center Associate Editors: Eric Kay, Review Articles J. Givens (99) Micron Technology, Inc. D. Bonnell (2001) Univ. of Pennsylvania J. P. McVittie (2000) Stanford University Paula Grunthaner, President-Elect S. Felch (2000) Varian Associates G. Owen (2000) Hewlett Packard Labs. Y. Yasuda (2001) Nagoya University Jet Propulsion Lab., Caltech JVST Publication Committee: Dorota Temple, Chair, MCNC Joseph D. Geller, Geller Microanalytical Lab. Jerry M. Woodall, Immediate John E. Crowell, UC San Diego J. William Rogers, Jr., Univ. of Washington Past-President Pete Sheldon, NREL JVST Editorial Board: Yale University J. C. Bean (2001) Univ. of Virginia T. Mayer Sandia Natl. Labs S. A. Chambers (99) Pacific NW National Lab. D. Monroe (2000) Lucent Bell Labs Joseph E. Green, Secretary A. Czanderna (2000) NREL D. Ruzic (99) Univ. of Illinois M. Kushner (2000) Univ. of Illinois P. A. Thiel (2001) Iowa State Univ. University of Illinois JVST Editorial Staff at AIP: Editorial Supervisor: Deborah McHone; Journal Coordinator: Margaret Reilly; Chief Production Editor: Mary Ellen Mormile John W. Coburn, Treasurer Univ. of CA, Berkeley The Journal of Vacuum Science & Technology B is published six times annually (Jan/Feb, Mar/Apr, May/ Jun, Jul/Aug, Sep/Oct, Nov/Dec) by the American Vacuum Society (AVS) through the American Institute of Physics (AIP). It is an official publication of the AVS and is received by all members of the Society. It is devoted to reports of original research and Review articles. The JVST B has been established to provide a vehicle for Directors the publication of research dealing with microelectronics and nanometer structures. The emphasis will be on processing, measurement, and phenomena, and will include vacuum processing, plasma processing, materials and structural characterization, microlithography, and the physics and chemistry of submicron and nanometer Cammy R. Abernathy structures and devices. This journal will publish the proceedings of conferences and symposia that are spon- University of Florida sored by the AVS and its divisions. Submit Manuscripts to the Editorial Office of the Journal of Vacuum Science & Technology, 10 Park Plaza, Yip-Wah Chung Caller Box 13994, Research Triangle Park, North Carolina 27709-3994; e-mail [email protected]. Manuscripts of papers presented at AVS-sponsored conferences and symposia and being submitted to JVST 8 should be sent Northwestern University to the Guest Editor appointed for that particular conference. Before preparing a manuscript, authors should read "Information for Contrbutors," printed in the first issue of each volume of the journal. Submission of a Elizabeth Dobisz manuscript is a representation that the manuscript has not been published previously nor currently submitted for publication elsewhere. Upon receipt of a manuscript the Editor will send the author a Transfer of Copyright Naval Research Laboratory Agreement form. This must be completed by the author and returned only to the Editorial Office prior to publication of an accepted paper in the Journal of Vacuum Science & Technology B. This written transfer of Gregory J. Exarhos copyright, which previously was assumed to be implicit in the act of submitting a manuscript, is necessary under the 1978 copyright law in order for the AVS and AIP to continue disseminating research results as widely as Pacific Northwest National Lab. possible. Further information may be obtained from AIP. Publication Charge: To support the cost of wide dissemination of research results through the publication of Peter Sheldon journal pages and production of a database of articles, the author's institution is requested to pay a page charge National Renewable Energy of $96 per page (with a one-page minimum). The charge (if honored) entitles the author to 100 free reprints. For Laboratory Errata the minimum page charge is $10, with no free reprints. Electronic Physics Auxiliary Publication Service (EPAPS): For a nominal fee, authors may submit material Peter M. A. Sherwood that is supplemental to a paper. EPAPS deposits must be in electronic media, and can include text, figures, movies, computer programs, etc. Retrieval instructions are footnoted in the related published paper. Direct Kansas State University requests to the Editor; for additional information see http://www.aip.org/pubservs/paps.html Advertising Rates will be supplied on request from AlP's Advertising Division, Suite 1N01, 2 Huntington Quadrangle, Melville, NY 11747-4502. Telephone: (516) 576-2440. Fax: (516) 576-2481. E-mail: JVST [email protected]. All insertion orders and advertising material should be sent to that division. Copying: Single copies of individual articles may be made for private use or research. Authorization is given G. Lucovsky, Editor-in-Chief (as indicated by the Item Fee Code for this publication) to copy articles beyond the use permitted by Sections North Carolina State University 107 and 108 of the U.S. Copyright Law, provided the copying fee of $15 per copy per article is paid to the Copyright Clearance Center, 222 Rosewood Drive, Danvers, MA 01923, USA. Persons desiring to photocopy materials for classroom use should contact the CCC Academic Permissions Service. The Item Fee Code for this publication is 0734-211X/99 $15.00. AVS Membership Authorization does not extend to systematic or multiple reproduction, to copying for promotional purposes, to Information may be electronic storage or distribution, or to republication in any form. In all such cases, specific written permission obtained from from AIP must be obtained. Permission for Other Use: Permission is granted to quote from the journal with the customary acknowledg- Angela Mulligan ment of the source. To reprint a figure, table, or other excerpt requires the consent of one of the authors and AVS Membership notification to AIP. and Scholarship Coordinator Requests for Permission: Address requests to AIP Office of Rights and Permissions, Suite 1N01, 2 120 Wall Street Huntington Quadrangle, Melville, NY 11747-4502; Telephone: (516) 576-2268; Fax: (516) 576-2327; Internet: 32nd Floor [email protected]. New York, NY 10005 Copyright © 1999 American Vacuum Society. All rights reserved. (212) 248-0200 lllliiMIIPiPSi -IP! '/%%%$P2 _ t ,N- >;' <■'-!■ «£ .'•-i ™~ ^ -^-* "•■«',o ■': ^- •-.' £ ■;. • JrKjL ! CO . ■O The Most Reliable and -'.-'; •-■"- '■' \ ■'" Innovative What's your application? Analytical? Scientific? Industrial? As the largest manufacturer of turbopumps worldwide, Pfeiffer Vacuum offers the widest range of turbopumps with the highest performance and uptime. Guaranteed. What else would you expect from the inventor of the turbopump and the pioneer in split-flow and turbodrag technology, but solutions to your analytical and research applications. Guaranteed. • Guaranteed best price/performance • Guaranteed high compression ratio • Guaranteed high throughput • Guaranteed high tolerable foreline pressure • Guaranteed lowest cost of ownership • Guaranteed worldwide service • Guaranteed application support For total vacuum solutions, Pfeiffer Vacuum offers a complete range of rotary vane pumps as well as gauges, leak detectors and RGAs. Call Pfeiffer Vacuum for the turbodrag pump that's right for your application. Guaranteed. Circle to receive literature. Circle to have a sales rep call. PFEIFFER m^VACUUM TECHNOLOGY INC. 24 Trafalgar Square, Nashua, NH 030B3-1988 Tel: 603-578-6500 • Fax: 603-578-6550 http://www.pfeiffer-vacuum.com XUV SILICON PHOTODIODES Features ♦ 100% Internal Collection Efficiency ♦ May be Operated Without Bias ♦ 8 Decades of Linearity ♦ Cryogenically and UHV Compatible ♦ No Change in QE with 100 Mrad (Si) ♦ With Integrated Bandwidth Limiting 124 eV Photons Filters Photon Energy (eV) 100 1,000 4,000 D o a Photons • • Electrons > Hydrogen Ions 100 1,000 10,000 40,000 Electron / Hydrogen Ion Energy (eV) TYPICAL RESPONSIVITY OF AXUV PHOTODIODES TO PHOTONS, ELECTRONS AND HYDROGEN IONS SXUV Series Photodiodes are Available for Infinite Hardness to XUV Photons INTERNATIONAL RADIATION DETECTORS INC. IRD 2545 West 237th Street, Unit I ♦ Torrance, California 90505-5229 (310) 534-3661 ♦ FAX (310) 534-3665 ♦ email: [email protected] http://www.ird-inc.com DEVELOPED IN COLLABORATION WITH NIST, NIH, LLNL, LANL, NCAR Journal of JVST B Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing, Measurement, and Second Series Volume 17, Number 4 Phenomena Jul/Aug 1999 Regular Articles Application and calibration of a quartz needle sensor for high resolution scanning force microscopy W. Clauss, J. Zhang, D. J. Bergeron, and A. T. Johnson 1309 Surface structure characterization of DNA oligomer on Cu(111) surface using low temperature scanning tunneling microscopy Chiho Hamai, Hiroyuki Tanaka, and Tomoji Kawai 1313 Microstructure and electrical properties of Sb nanocrystals formed in thin, thermally grown Si0 layers 2 by low-energy ion implantation Anri Nakajima, Hiroshi Nakao, Hiroaki Ueno, Toshiro Futatsugi, and Naoki Yokoyama 1317 Fabrication of a metal nanostructure on the Si(111) surface D. Rogers and H. Nejoh 1323 Mechanical properties, stress evolution and high-temperature thermal stability of nanolayered Mo-Si-N/SiC thin films P. Torri, J.-P. Hirvonen, H. Kung, Y.-C. Lu, M. Nastasi, and P. N. Gibson 1329 Characterization of bending in single crystal Si beams and resonators J. W. Weigold, W. H. Juan, S. W. Pang, and J. T. Borenstein 1336 (Continued) Journal of Vacuum Science & Technology B (ISSN: 0734-211X) is published six Subscriptions, renewals, and address changes should be addressed to Sub- times annually (Jan/Feb, Mar/Apr, May/Jun, Jul/Aug, Sep/Oct, Nov/Dec) by the scription Fulfillment Division, SLACK Inc., 6900 Grove Road, Thorofare, American Vacuum Society through the American Institute of Physics, Suite NJ 08086. Allow at least six weeks advance notice. For address changes 1N01, 2 Huntington Quadrangle, Melville, NY 11747-4502. 1999 subscription Please send both old and new addresses, and, if possible, include a label from rates are: US$763. POSTMASTER: Send address changes to Journal of 'he plastic mailing wrapper of a recent issue. Missing issue requests will be Vacuum Science & Technology B, SUCK Inc., 6900 Grove Road, Thorofare, honored only if received within six months of publication date (nine months for NJ 08086. Periodicals postage paid at Thorofare, NJ 08086, and at additional Australia and Asia). mailing offices. Single-copy orders (current and back issues) should be addressed to Ameri- Membership in the American Vacuum Society includes $17.50 from member- can lnstitute of Pnvsics. Circulation and Fulfillment Division, Suite 1N01, 2 Hun- ship dues to be applied towards a subscription to Journal of Vacuum Science & tin9ton Quadrangle, Melville, NY 11747-4502; Telephone 800-344-6902 (or Technology B 516-576-2270 outside the U.S.A.), Fax at 516-349-9704, or E-mail at [email protected]. Subscription Prices (1999) Reprints: Reprints can be ordered with or without covers only in multiples of 50 Can., Mex., (with a minimum of 100 in each category) from AIP, Circulation and Fulfillment/ U.S.A. Central &' Reprints, Suite 1N01, 2 Huntington Quadrangle, Melville, NY 11747-4502; Fax: and S.America Europe, Asia, 516-349-9704; Telephone: 800-344-6909 (U.S. and Canada) or 516-576-2234. Poss- & Caribbean Africa & Oceania* Document Delivery: Copies of journal articles can be ordered for online deliv- ..,___+ tt ff j. ery from the Articles in Physics online document delivery service JVSTBT $763 $793 $814 (http://oips.aip.org/jhtml/artinphys/). JVST B* $877 $905 $929 JVST A and B* $877 $935 $977 Microform: Journal of Vacuum Society & Technology B is available on micro- JVST A and B* $877 $905 $905 ficne issued at tne same frequency as the printed journal and annually on mi- i T t <tinqn «mo? crofilm. A microform catalog is available from AIP, Circulation and Fulfillment/ JVST A and B $992 $1050 $1092 Single Copy Sales, Suite 1N01, 2 Huntington Quadrangle, Melville, NY 11747- tPaper and online. . 4502; Fax: 516-349-9704; Telephone: 800-344-6908 (U.S. and Canada) or 516- *Paper and CD-ROM. 576-2277. ... . "', . .. ,. • t ■ u. Online Access: The Journal of Vacuum Science and Technology B is available Nonmember subscripM tions incude air-freiga ht service. onl,i. n e ,t o A.,V,S„ memb. ers at. n o a d.,.d,•it.i■ o n a l, c hu arge; ,f o r dJ et,a i■,ls , p l, ease see uh«tt p : /n/ Back-number Prices: 1999 single copy: $135. Prior to 1999 single copies: www.aip.org/ojs. Abstracts of journal articles are available from AlP's SPIN Da- $105. tabase, via AlP's Online Journal Publishing Service (OJPS) (http://ojps.aip.org). J. Vac. Sei. Technol. B, Vol. 17, No. 4, Jul/Aug 1999 In situ ellipsometric study of the formation process of metalorganic vapor-phase epitaxy-grown quantum dots Jeong-Sik Lee, Shigeo Sugou, Hong-Wen Ren, and Yasuaki Masumoto 1341 High temperature reaction of nitric oxide with Si surfaces: Formation of Si nanopillars through nitride masking and oxygen etching K. Prabhakaran and T. Ogino 1346 Low energy electron beam decomposition of metalorganic precursors with a scanning tunneling microscope at ambient atmosphere H. Briickl, J. Kretz, H. W. Koops, and G. Reiss 1350 Two-dimensional dopant profiling of patterned Si wafers using phase imaging tapping mode atomic force microscopy with applied biases M. W. Nelson, P. G. Schroeder, R. Schlaf, and B. A. Parkinson 1354 Fabrication of a microcavity structure with a polyimide thin film prepared by vacuum deposition polymerization Y. Sakakibara and T. Tani 1361 Low voltage electron beam lithography in PMMA A. Olkhovets and H. G. Craighead 1366 Surface roughness development during photoresist dissolution Lewis W. Flanagin, Vivek K. Singh, and C. Grant Willson 1371 Relations between the solubility speed and the electrical conductivity of phenol novolak polymer solutions T. Takeda and M. Saka 1380 Low-stress W/Cr films for SCALPEL® mask scattering layers David L. Windt 1385 Microelectron gun integrating a point-source cathode Zoubida Hammadi, Michel Gauch, and Roger Morin 1390 Low brightness and high emittance electron gun for a reducing image projection system Mamoru Nakasuji and Hiroyasu Shimizu 1395 Generalization of electrostatic lens characteristics using the Picht ray trajectories Yoshimi Kawanami and Tohru Ishitani 1400 X-ray photoelectron spectroscopy analyses of oxide-masked organic polymers etched in high density plasmas using SCVOj gas mixtures C. Monget and O. Joubert 1406 Fabrication and characterization of chromium based single-electron transistors with evaporated chromium oxide barrier tunnel junctions Yu. A. Pashkin, J. P. Pekola, and L S. Kuzmin ' 1413 Process sensing and metrology in gate oxide growth by rapid thermal chemical vapor deposition from SiH and N 0 4 2 Guangquan Lu, Laura L. Tedder, and Gary W. Rubloff 1417 Relaxation of strained Si layers grown on SiGe buffers S. B. Samavedam, W. J. Taylor, J. M. Grant, J. A. Smith, P. J. Tobin, A. Dip, A. M. Phillips, and R. Liu 1424 High density plasma deposition of device quality silicon nitride. II. Effects of thickness on the electrical properties M. C. Hugon, F. Delmotte, B. Agius, and E. A. Irene 1430 Characterization of Al, Cu, and TiN surface cleaning following a low-/C dielectric etch P. J. Matsuo, T. E. F. M. Standaert, S. D. Allen, G. S. Oehrlein, and T. J. Dalton 1435 Reaction and thermal stability of cobalt disilicide on polysilicon resulting from a Si/Ti/Co multilayer system A. Alberti, F. La Via, and F. Rimini 1448 Impact of plasma-enhanced chemical vapor deposited oxide characteristics on interconnect via resistance and device performance of four-transistor static random access memory with polysilicon load resistors C.-F. Lin, W. T. Tseng, M. S. Feng, and Y. L. Wang 1456 Study of crystal orientation in Cu film on TiN layered structures Kazuhide Abe, Yusuke Harada, and Hiroshi Onoda 1464 (Continued) J. Vac. Sei. Technol. B, Vol. 17, No. 4, Jul/Aug 1999 RGA for the Masses Systems from $3750 (u.s.üst) Residual gas analyzers from SRS offer uncompro- ysjems mised performance at half the price of the competition. Our systems provide mass ranges to Partial pressure 200 amu, detectable partial pressures to 10-14 Torr and better than 1 amu resolution. With our interac- 4 ll|lWs of magnitude dynamic tive Windows® software package you can fully ränge in a single scan control the RGA sensor, acquire data and analyze your vacuum system in real-time. The simple, Real-time Windows® software rugged quadrupole mass spectrometer attaches directly to a 2 3/4" CF flange. A dual Th0 lr filament 2 and a unique continuous dynode electron Mass spectra, leak detection and multiplier provide increased stability and longer life pressure vs. time modes than other designs. Both are field replaceable in a matter of minutes - a first for RGAs! If your Multi-head operation application involves residual gas analysis, leak detection or vacuum processing, contact us for a Optional Electron Multiplier copy of our RGA systems brochure and demo software package. a S£ BDI:|:.:|i3O30S >±!|öBl[j|.;|nc pic EdW y»ew.K Miw*He . H5MiJ H BiBBi»a E Hl*ltije tif«UMfccil * WiCliUaowi a H<erlpt iWiiH; .; Vacuum Diagnosis Single Scan Dynamic Range 10 12 14 16 18 20 32 34 26 28 30 32 34 36 38 40 42 44 46 48 60 62 64 66 68 80 62 64 I Atomic Mass Units i The RGA is an invaluable vacuum diagnostic tool. With dynamic range that spans 6 orders of Shown above is the mass spectrum of a vacuum magnitude, three isotopes of Nitrogen (14N ,14N 15N, 2 chamber contaminated with oil. 15N are clearly detected in a single scan. 2) Stanford Research Systems 1290-D Reamwood Avenue, Sunnyvale, CA 94089 Telephone (408)744-9040 • FAX (408)744-9049 Email: [email protected] • WWW: www.thinkSRS.com Windows is a registered trademark of Microsoft Corporation