Table Of Content

Applied Surface Science 224 (2004) I-VII www.elsevier.com locate apsusc Author Index Abele, P., see Schumacher, H. 224 (2004) 410 Bouchier, D., see Nguyen, L.H. 224 (2004) 134 Aberg, L., see Eguchi, S. 224 (2004) 59 Bouchier, D., see Yam, V. 224 (2004) 143 Adde, R., see Aniel, F. 224 (2004) 370 Brabant, P., J. Wen, J. Italiano, T. Landin, N. Ahigren, D., see Harame, D.L. 224 (2004) 9 Cody and L. Haen, Achieving a SiGe HBT Anderson, F., see Harame, D.L. 224 (2004) 9 epitaxial emitter with novel low thermal Aniel, F.. M. Enciso, S. Richard, L. Giguerre, budget technique 224 (2004) 347 N. Zerounian, P. Crozat, R. Adde, T. Hack- Braithwaite, G., see Bera, L.K. 224 (2004) 278 barth, J.-.H. Herzog and U. Konig, Micro- Brevard, L., see Ducroquet, F. 224 (2004) 274 wave performances of silicon Brijs, B., see Meunier-Beillard, P. 224 (2004) 31 heterostructure-FETs 224 (2004) Bulsara, M.T., see Bera, L.K. 224 (2004) 278 Ariyoshi, S., S. Takeuchi, O. Nakatsuka, A. Buschbeck, H.M., A. Erhart, Y. Goeggel, C. Sakai, S. Zaima and Y. Yasuda, Influence Rosenblad, S. Wiltsche, J. Ramm, A. Dom- of Si,_ Ge, interlayer on the initial growth mann and M. Kummer, Production-ready of SiGeC on Si(1 0 0) 224 (2004) dry cleaning and deposition processes for Asano, T., see Kudoh, T. 224 (2004) ; low-temperature Si and SiGe epitaxy 224 (2004) 36 Aufinger, K., see Schafer, H. 224 (2004) Busquere, J.P., see Sadowy, J. 224 (2004) 419 Bichle, D., see Tsujino, S. 224 (2004) : Calmes, C.. D. Bouchier, C. Clere and Y. Balasubramanian, N., see Bera, L.K. 224 (2004) 2 Zheng, Roughening mechanisms of tensily Banerjee, S.K., see Shi, Z. 224 (2004) 2 strained Si, ,_,Ge,C, films grown by Bartels, M., B. Neinhiis, C. Jungemann and B. UHV-CVD: evidence of a carbon surface Meinerzhagen, Evaluation of compact noise diffusion related mechanism 224 (2004) 122 modeling for Si/SiGe HBTs based on hier- Campidelli, Y., see Tsujino, S. 224 (2004) 377 archical hydrodynamic noise simulation 224 (2004) Caymax, M., see Delhougne, R. 224 (2004) 91 Bartels, M., see Meinerzhagen, B. 224 (2004) Caymax, M., see Loo, R. 224 (2004) 24 Barth, R.. see Winkler, W. 224 (2004) 2 Caymax, M., see Loo, R. 224 (2004) 63 Bary, L., see Rennane, A. 224 (2004) Caymax, M., see Loo, R. 224 (2004) 292 Bauer, G., see Kirfel, O 224 (2004) Caymax, M., see Meunier-Beillard, P. 224 (2004) 31 Bauer, J., see Winkler, W. 224 (2004) 2 Chakravorty, A., R. Garg and C.K. Maiti, Com- Bauer, M., see Jutzi, M. 224 (2004) parison of state-of-the-art bipolar compact Becker, M., see Nguyen, L.H. 224 (2004) models for SiGe-HBTs 224 (2004) 354 Benamara, M., see Nguyen, L.H 224 (2004) Chang, W.-H., see Chen, W.-Y. 224 (2004) 148 Bensahel, D., see Tsujino, S. 224 (2004) Chang, W.H., see Pei, Z. 224 (2004) 165 Bera, L.K., S. Mathew, N. Balasubramanian, G. Chatterjee, S..G.K. Dalapati, S.K. Samanta and Braithwaite, M.T. Currie, F. Singaporewala, C.K. Maiti, Electrical properties of ZrO, J. Yap, R. Hammond, A. Lochtefeld, M.T. films on Si,_, ,Ge,C, epitaxial layers 224 (2004) 288 Bulsara and E.A. Fitzgerald, Analysis of Chatterjee, S., see Samanta, S.K. 224 (2004) 283 carrier generation lifetime in strained-Si/ Chen, LJ., see Lee, S.W. 224 (2004) 152 SiGe heterojunction MOSFETs from capa- Chen, P.-S., see Chen, W.-Y. 224 (2004) 148 citance transient 224 (2004) 278 Chen, P.S., see Lee, S.W. 224 (2004) 152 Berlin, D., see Kim, Y. 224 (2004) 175 Chen, P.S., see Pei, Z. 224 (2004) 165 Berroth, M., see Jutzi, M. 224 (2004) 170 Chen, W.Y., see Lee, S.W. 224 (2004) 152 Besson, P., see Ducroquet, F. 224 (2004) 274 Chen, W.Y., see Pei, Z. 224 (2004) 165 Bock, J., see Schiifer, H. 224 (2004) 18 Chen, W.-Y., W.-H. Chang, A.-T. Chou, T.-M. Boguth, S., see Schiifer, H. 224 (2004) 18 Hsu, P.-S. Chen, Z. Pei and L.-S. Lai, Bolze, D., see Winkler, W. 224 (2004) 297 Optical properties of stacked Ge/Si quan- Borngriiber, J., see Winkler, W. 224 (2004) 297 tum dots with different spacer thickness Bouchier, D., see Calmes, C. 224 (2004) 122 grown by chemicel vapor deposition 224 (2004) 148 doi: 10.1016/S0169-4332(04)00074- 1 Author Index Choi, H., see Shim, J.C. 224 (2004) 2 Eguchi, S., J.J. Lee, SJ. Rhee, D.L. Kwong, Chou, A.-T., see Chen, W.-Y. 224 (2004) MLL. Lee, E.A. Fitzgerald, 1. Aberg and J.L. Chou, A.T., see Pei, Z. 224 (2004) Hoyt, On the mechanism of ion-implanted Clerc, C., see Calmes, C. 224 (2004) As diffusion in relaxed SiGe 224 (2004) 59 Cody, N., see Brabant, P. 224 (2004) : Ehwald, K.-E., see Winkler, W. 224 (2004) 297 Collaert, N., see Loo, R. 224 (2004) 2 El Kurdi, M., see Nguyen, L.H. 224 (2004) 134 Coolbaugh, D., see Harame, D.L. 224 (2004) El-Diwany, M., see Sadovnikov, A. 224 (2004) 320 Cottrel, P.. see Harame, D.L. 224 (2004) Enciso, M., see Aniel, F. 224 (2004) 370 Cressler, J.D., see Harame, D.L. 224 (2004) Erhart, A., see Buschbeck, H.M. 224 (2004) Crippa, P.. S. Orcioni, F. Ricciardi and C. Ernst, T., see Ducroquet, F. 224 (2004) 2 Turchetti, A 4.4 to 5 GHz SiGe low noise amplifier 224 (2004) 429 Ferguson, R., see Gaspari, V. 224 (2004) Crippa, P.. S. Orcioni, F. Ricciardi and C. Fitzgerald, E.A., see Bera, L.K. 224 (2004) Turchetti, A DC-5 GHz NMOSFET SPDT Fitzgerald, E.A., see Eguchi, S. 224 (2004) T/R switch in 0.25-4um SiGe BiCMOS tech- Fobelets, K., see Gaspari, V. 224 (2004) 3 nology 224 (2004) 434 Fobelets, K., see Michelakis, K. 224 (2004) 3 Crozat, P., see Aniel, F. 224 (2004) 370 Freeman, G., see Harame, D.L. 224 (2004) Currie, M.T., see Bera, L.K. 224 (2004) 278 Freeman, G., see Stricker, A.D. 224 (2004) Fujiu, M., K. Takahashi, M. Sakuraba and J. Dalapati, G.K., see Chatterjee, S. 224 (2004) 288 Murota, Effect of carbon on the thermal Dalapati, G.K., see Samanta, S.K. 224 (2004) 283 stability of a Si atomic layer on Ge(1 0 0) 224 (2004) Darma, Y.. H. Murakami and S. Miyazaki, Fujiwara, K., see Kutsukake, K. 224 (2004) Influence of thermal annealing on compositional mixing and crystallinity of Gao, Q., see Rao, Y. 224 (2004) highly selective grown Si dots with Garg, R., see Chakravorty, A. 224 (2004) Ge core 224 (2004) Gaspari, V., K. Fobelets, J.E. Velazquez-Perez, Débarre, D., see Nguyen, L.H. 224 (2004) R. Ferguson, K. Michelakis, S$. Despoto- Débarre, D., see Yam, V. 224 (2004) poulos and C. Papavassilliou, Effect of Dehlinger, G., see Harame, D.L. 224 (2004) temperature on the transfer characteristic Deleonibus, S., see Ducroquet, F. 224 (2004) 2 of a 0.5 pm-gate Si:SiGe depletion-mode n- Delhougne, R., P. Meunier-Beillard, M. Cay- MODFET 224 (2004) 3 max, R. Loo and W. Vandervorst, Devel- Gaspari, V., see Michelakis, K. 224 (2004) 3 opment of a new type of SiGe thin strain Geenen, L., see Meunier-Beillard, P. 224 (2004) : relaxed buffer based on the incorporation of Giguerre, L., see Aniel, F. 224 (2004) : a carbon-containing layer 224 (2004) Goeggel, Y., see Buschbeck, H.M. 224 (2004) Delhougne, R., see Loo, R. 224 (2004) Goryachko, A., see Kriiger, D. 224 (2004) Denker, U., H. Sigg and O.G. Schmidt, Inter- Grabolla, T., see Winkler, W. 224 (2004) mixing in Ge hut cluster islands 224 (2004) Graffeuil, J., see Rennane, A. 224 (2004) 341 Despotopoulos, S., see Gaspari, V. 224 (2004) Graffeuil, J., see Sadowy, J. 224 (2004) 419 Despotopoulos, S., see Michelakis, K. 224 (2004) Grahn, J.V., see Suvar, E. 224 (2004) 336 Di Maria, J.L., see Ducroquet, F. 224 (2004) 2 Grasser, T., see Palankovski, V. 224 (2004) 361 Diehl, L., see Tsujino, S. 224 (2004) Grasser, T., see Wagner, S. 224 (2004) 365 Dommann, A., see Buschbeck, H.M. 224 (2004) 36 Greenberg, D., see Harame, D.L. 224 (2004) 9 Doumen, G., see Meunier-Beillard, P. 224 (2004) 31 Grenier, K., see Sadowy, J. 224 (2004) 419 Drews, J., see Winkler, W. 224 (2004) 297 Griitzmacher, D., see Kirfel, O. 224 (2004) 139 Dubuc, D., see Sadowy, J. 224 (20044)1 9 Griitzmacher, D., see Tsujino, S. 224 (2004) 377 Ducroquet, F., T. Ernst, O. Weber, J.-M. Hart- Gu, S.L., see Yang, H.G. 224 (2004) 394 mann, V. Loup, P. Besson, L. Brévard, J.L. Di Maria and S. Deleonibus, Electrical Haak, U., see Winkler, W. 224 (2004) 297 properties of Si, _,C,/Si/SiO, interface for Haas, B., see Tsujino, S. 224 (2004) 377 sub 50 nm strained-channel nMOSFETs 224 (2004) 274 Hackbarth, T., see Aniel, F. 224 (2004) 370 Dunn, J.S., see Harame, D.L. 224 (2004) 9 Hackbarth, T., see Myronov, M. 224 (2004) 265 Durov, S., see Myronov, M. 224 (2004) 265 Haen, L., see Brabant, P. 224 (2004) 347 Halbwax, M., see Nguyen, L.H. 224 (2004) 134 Egawa, T., A. Sakai, T. Yamamoto, N. Taoka, Hallstedt, J., E. Suvar, P.O.A. Persson, L. Hult- O. Nakatsuka, S. Zaima and Y. Yasuda, man, Y.-B. Wang and H.H. Radamson, Strain-relaxation mechanisms of SiGe Growth of high quality — epitaxial layers formed by two-step growth on Si(O Si, _,_,Ge,C, layers by using chemical 0 1) substrates 224 (2004) 104 vapor deposition 224 (2004) 46 Egawa, T., see Yamamoto, T. 224 (2004) 108 Hammond, R., see Bera, L.K. 224 (2004) 278 Author Index Han, P.. see Yang, H.G. 224 (2004) 394 red optical fiber links operating at 1.25 Haralson, E., E. Suvar,G. Malm, H. Radamson, Gbit/s 224 (2004) 170 Y.-B. Wang and M. Ostling, The effect of C on emitter—base design for a single-poly- Kanno, H., see Sadoh, T. 224 (2004) 227 silicon SiGe:C HBT with an IDP emitter 224 (2004) Kasai, K., see Kasamatsu, A. 224 (2004) 382 Haralson, E., see Suvar, E. 224 (2004) Kasamatsu, A., K. Kasai, K. Hikosaka, T. Mat- Harame, D.L., S.J. Koester, G. Freeman, P. sui and T. Mimura, 60 nm gate-length Si/ Cottrel, K. Rim, G. Dehlinger, D. Ahlgren, SiGe HEMT 224 (2004) 382 J.S. Dunn, D. Greenberg, A. Joseph, F. Kasper, E.. and S. Heim, Challenges of high Ge Anderson, J.-S. Rieh, S.A.S.T. Onge, D. content silicon germanium structures 224 (2004) 3 Coolbaugh, V. Ramachandran, J.D. Cress- Kasper, E.. see Jutzi, M. 224 (2004) 170 ler and S. Subbanna, The revolution in Kawazoe, Y., see Yonenaga, I. 224 (2004) 193 SiGe: impact on device electronics 224 (2004) Kenjo, A., see Sadoh, T. 224 (2004) 227 Hartmann, J.-M., see Ducroquet, F. 224 (2004) 2 Kenjo, A., see Tsunoda, I. 224 (2004) 231 Hattori, T., see Sawano, K. 224 (2004) Kermarrec, O., see Tsujino, S. 224 (2004) 377 Heim, S., see Kasper, E. 224 (2004) Kern, K., see Kirfel, O. 224 (2004) 139 Heinemann, B., see Tillack, B. 224 (2004) Kim, Y., D. Berlin and A. Samoilov, Fabrica- Heinemann, B., see Winkler, W. 224 (2004) 2 tion of epitaxial SiGe optical waveguide Herzog, H.-J., see Myronov, M. 224 (2004) 2 structures 224 (2004) 175 Herzog, J.-.H., see Aniel, F 224 (2004) King, T.-J., see Takeuchi, H. 224 (2004) 73 Hesse, A., see Kirfel, O. 224 (2004) Kirfel, O., E. Miiller, D. Griitzmacher, K. Kern, Hikosaka, K., see Kasamatsu, A. 224 (2004) A. Hesse, J. Stangl, V. Holy and G. Bauer, Hirose, Y., see Sawano, K. 224 (2004) Shape and composition change of Ge dots Hock, G., see Myronov, M. 224 (2004) 2 due to Si capping 224 (2004) 139 Holbrook, R., see Watanabe, G. 224 (2004) 405 Knapp, H., see Schiffer, H. 224 (2004) 18 Holsteyns, F., see Loo, R. 224 (2004) 63 Knoll, D., see Tillack, B. 224 (2004) 55 Holy, V., see Kirfel, O. 224 (2004) 139 Knoll, D., see Winkler, W. 224 (2004) 297 Héppner, W., see Winkler, W. 224 (2004) 297 Koester, S.J.. see Harame, D.L. 224 (2004) 9 Hopstaken, M., see Meunier-Beillard, P. 224 (2004) 31 Koga, J., see Takagi, S.-i. 224 (2004) 241 Hoyt, J.L., see Eguchi, S. 224 (2004) 59 Koh, S., see Sawano, K. 224 (2004) 99 Hsieh, W.Y., see Wang, C.S. 224 (2004) 222 Konig, U., see Aniel, F. 224 (2004) 370 Hsu, T.-M., see Chen, W.-Y. 224 (2004) 148 Konig, U., see Myronov, M. 224 (2004) 265 Hsu, T.M., see Lee, S.W. 224 (2004) 152 Kosina, H., see Palankovski, V. 224 (2004) 361 Hsu, T.M., see Pei, Z. 224 (2004) 165 Koyanagi, M., see Shim, J.C. 224 (2004) 260 Hua, W.-C., T.-Y. Yang and C.W. Liu, The Krakowski, T., see Sadovnikov, A. 224 (2004) 320 comparison of isolation technologies and Kriiger, D., A. Penkov, Y. Yamamoto, A. Gor- device models on SiGe bipolar low noise yachko and B. Tillack, Characterization of amplifier 224 (2004) 425 Ge gradients in SiGe HBTs by AES depth Hultman, L., see Hallstedt, J. 224 (2004) profile simulation 224 (2004) 51 Kriiger, D., see Tillack, B. 224 (2004) 55 Inada, T., see Ishida, T. 224 (2004) Kriiger, D., see Winkler, W. 224 (2004) 297 Inokuchi, Y., see Kunii, Y. 224 (2004) Kubicek, S., see Loo, R. 224 (2004) 63 Irieda, S., see Ishida, T. 224 (2004) Kuchenbecker, J., see Rennane, A. 224 (20043)4 1 Ishida, T., S. Irieda, T. Inada and N. Sugii, Kuck, B., see Winkler, W. 224 (2004) 297 Characterization of As ion-implanted Kudoh, T., and T. Asano, Si/SiGe heterojunc- layers in strained-Si/SiGe/Si hetero-struc- tion collector for low loss operation of tures 224 (2004) Trench IGBT 224 (2004) 399 Italiano, J., see Brabant, P. 224 (2004) Kummer, M., see Buschbeck, H.M. 224 (2004) 36 Kunii, Y., Y. Inokuchi, A. Moriya, H. Kurokawa Jeong, Y., M. Sakuraba and J. Murota, Epitaxial and J. Murota, In situ B doping of SiGe(C) growth of N delta doped Si films on Si(1 0 using BCI, in ultraclean hot-wall LPCVD 224 (2004) 68 0) by alternately supplied NH, and SiH, 224 (2004) 197 Kurino, H., see Shim, J.C. 224 (2004) 260 Jiang, Z., see Rao, Y. 224 (2004) 160 Kurokawa, H., see Kunii, Y. 224 (2004) 68 Johnson, J.B., see Stricker, A.D. 224 (2004) 324 Kurps, R., see Winkler, W. 224 (2004) 297 Joseph, A., see Harame, D.L. 224 (2004) 9 Kutsukake, K., N. Usami, K. Fujiwara, T. Uji- Jungemann, C., see Bartels, M. 224 (2004) 350 hara, G. Sazaki, K. Nakajima, B. Zhang and Jungemann, C., see Meinerzhagen, B. 224 (2004) 235 Y. Segawa, Fabrication of SiGe-on-insula- Jutzi, M., M. Berroth, G. Wohl, C. Parry, M. tor by rapid thermal annealing of Ge on Si- Oehme, M. Bauer, C. Schéllhorn and E. on-insulator substrate 224 (2004) 95 Kasper, SiGe PIN photodetector for infra- Kwong, D.L., see Eguchi, S. 224 (2004) 59 IV Author Index Lai, L.-S., see Chen, W.-Y. 224 (2004) 148 Meunier-Beillard, P.. M. Caymax, K. Van Nieu- Lai, L.S., see Pei, Z. 224 (2004) 165 wenhuysen, G. Doumen, B. Brijs. M. Hop- Landin, T., see Brabant, P. 224 (2004) 347 staken, L. Geenen and W. Vandervorst, N, Le Thanh, V., see Yam, V. 224 (2004) 143 as carrier gas: an alternative to H, for Lee, D., S. Takehiro, M. Sakuraba, J. Murota enhanced epitaxy of Si, SiGe and SiGe:C 224 (2004) and T. Tsuchiya, Fabrication of 0.12 pm Meunier-Beillard, P., see Delhougne, R. 224 (2004) pMOSFETs on high Ge fraction Si/Si, Meunier-Beillard, P., see Loo, R. 224 (2004) Ge /Si(1 0.0) heterostructure with ultrashal- Meyer, K.D.. see Loo, R. 224 (2004) low source/drain formed using B-doped Michelakis, K., S. Despotopoulos, V. Gaspari, SiGe CVD 224 (2004) 25 A. Vilches, K. Fobelets, C. Papavassiliou, Lee, J.J., see Eguchi, S. 224 (2004) C. Toumazou and J. Zhang, SiGe virtual Lee, M.L., see Eguchi, S. 224 (2004) substrate HMOS transistor for analogue Lee, S.W., LJ. Chen, P.S. Chen, M.-J. Tsai, applications 224 (2004) : C.W. Liu, W.Y. Chen and T.M. Hsu, Michelakis, K., see Gaspari, V. 224 (2004) ° Improved growth of Ge quantum dots in Mimura, T., see Kasamatsu, A. 224 (2004) Ge/Si stacked layers by pre-intermixing Mironov, O.A., see Myronov, M. 224 (2004) treatments 224 (2004) 152 Miyao, M., see Sadoh, T. 224 (2004) Lee, S.W., see Pei, Z. 224 (2004) 165 Miyao, M., see Tsunoda, I. 224 (2004) LeThanh, V., see Nguyen, L.H. 224 (2004) 134 Miyazaki, S.. see Darma, Y. 224 (2004) Lindsay, R., see Loo, R. 224 (2004) 63 Mizuno, T., see Sugiyama, N. 224 (2004) Liu, C.W., see Hua, W.-C. 224 (2004) 425 Mizuno, T., see Takagi, S.-i. 224 (2004) Liu, C.W., see Lee, S.W. 224 (2004) 152 Mizuno, T., see Usuda, K. 224 (2004) Lochtefeld, A., see Bera, L.K. 224 (2004) 278 Moriya, A., see Kunii, Y. 224 (2004) Loo, R., and M. Caymax, Avoiding loading Moriyama, Y., see Sugiyama, N. 224 (2004) effects and facet growth. Key parameters Moriyama, Y., see Takagi, S.-i. 224 (2004) for a successful implementation of selective Moriyama, Y., see Usuda, K. 224 (2004) epitaxial SiGe deposition for HBT-BiC- Miiller, E., see Kirfel, O. 224 (2004) MOS and high-mobility hetero-channel Miiller, E., see Tsujino, S. 224 (2004) pMOS devices 224 (2004) Murakami, H., see Darma, Y. 224 (2004) Loo, R., M. Caymax, P. Meunier-Beillard, I. Murata, T., and M. Suemitsu, GeH, adsorption Peytier, F. Holsteyns, S. Kubicek, P. Ver- on Si(0 0 1) at RT: transfer of H atoms to Si heyen, R. Lindsay and O. Richard, A new sites and atomic exchange between Si and technique to fabricate ultra-shallow-junc- Ge 224 (2004) tions, combining in situ vapour HC] etching Murota, J., see Fujiu, M. 224 (2004) and in situ doped epitaxial SiGe re-growth 224 (2004) Murota, J., see Jeong, Y. 224 (2004) Loo, R., N. Collaert, P. Verheyen, M. Caymax, Murota, J., see Kunii, Y. 224 (2004) R. Delhougne and K.D. Meyer, Fabrication Murota, J., see Lee, D. 224 (2004) of 50 nm high performance strained-SiGe Murota, J., see Muto, D. 224 (2004) pMOSFETSs with selective epitaxial growth 224 (2004) 292 Murota, J., see Noh, J. 224 (2004) Loo, R., see Delhougne, R. 224 (2004) 91 Murota, J., see Sasaki, D. 224 (2004) Loup, V., see Ducroquet, F. 224 (2004) 274 Murota, J., see Shimamune, Y. 224 (2004) Lu, F., see Rao, Y. 224 (2004) 160 Murota, J., see Zaima, S. 224 (2004) Lu, S.C., see Pei, Z. 224 (2004) 165 Muto, D., M. Sakuraba, T. Seino and J. Murota, Ar plasma irradiation effects in atomically Maeda, T., see Takagi, S.-i. 224 (2004) 241 controlled Si epitaxial growth 224 (2004) Maiti, C.K., see Chakravorty, A. 224 (2004) 354 Myronov, M., S. Durov, O.A. Mironov, E.H.C. Maiti, C.K., see Chatterjee, S. 224 (2004) 288 Parker, T.E. Whall, T. Hackbarth, G. Hick, Maiti, C.K., see Samanta, S.K. 224 (2004) 283 H.-J. Herzog and U. Kénig, Low-frequency Malm, B.G., see Suvar, E. 224 (2004) 336 noise suppression and de characteristics Malm, G., see Haralson, E. 224 (2004) 330 enhancement in sub-jum metamorphic p- Marschmeyer, M., see Winkler, W. 224 (2004) 297 MOSFETs with strained Si, ,Gey > channel Mathew, S., see Bera, L.K. 224 (2004) 278 grown by MBE 224 (2004) 2 Matsui, T., see Kasamatsu, A. 224 (2004) 382 Meinerzhagen, B., C. Jungemann, B. Neinhiis Nakagawa, K., see Sawano, K. 224 (2004) and M. Bartels, Numerical simulation of Nakaharai, S., see Sugiyama, N. 224 (2004) 188 strained Si/SiGe devices: the hierarchical Nakaharai, S., see Takagi, S.-i. 224 (2004) 241 approach 224 (2004) 235 Nakaharai, S., see Usuda, K. 224 (2004) 113 Meinerzhagen, B., see Bartels, M. 224 (2004) 350 Nakajima, K., see Kutsukake, K. 224 (2004) 95 Meister, T.F., see Schiifer, H. 224 (2004) 18 Nakatsuka, O., see Ariyoshi, S. 224 (2004) 117 Mentese, S., see Tsujino, S. 224 (2004) 377 Nakatsuka, O., see Egawa, T. 224 (2004) 104 Author Index Nakatsuka, O., see Yamamoto, T 224 (2004) 108 Rao, Y., Q. Gao, Z. Jiang and F. Lu, Coupling Nakatsuka, O., see Zaima, S. 224 (2004) 215 effect dependent on the thickness of the Nakazawa, H., see Senthil, K 224 (2004) 183 spacer layer between double layers of quan- Neinhiis, B., see Bartels, M. 224 (2004) 350 tum dots 224 (2004) 160 Neinhiis, B., see Meinerzhagen, B. 224 (2004) 235 Rennane, A., L. Bary, J.L. Roux, J. Kuchen- Nguyen, L.H., V. LeThanh, D. Deébarre, V. becker, J. Graffeuil and R. Plana, Reliabil- Yam, M. Halbwax, M. El Kurdi, D. Bouch- ity properties of SiGe HBTs 224 (2004) 341 ier, P. Rosner, M. Becker, M. Benamara and Rest, M., see Schiifer, H. 224 (2004) 18 H.P. Strunk, Selective epitaxial growth of Rhee, SJ., see Eguchi, S. 224 (2004) 59 Ge quantum dots on patterned Si0,/Si(0 0 Ricciardi, F., see Crippa, P. 224 (2004) 429 1) surfaces 224 (2004) Ricciardi, F., see Crippa, P. 224 (2004) 434 Noh, J.. S. Takehiro, M. Sakuraba and J. Richard, O.. see Loo, R 224 (2004) 63 Murota, Relationship between impurity Richard, S., see Aniel, F 224 (2004) 370 (B or P) and carrier concentration in Richter, H., see Winkler, W. 224 (2004) 297 SiGe(C) epitaxial film produced by thermal Rieh, J.-S., see Harame, D.L. 224 (2004) 9 treatment 224 (2004) 77 Rich, J.-S., see Stricker, A.D. 224 (2004) 324 Numata, T., see Takagi, S.-i. 224 (2004) 241 Rim, K., see Harame, D.L. 224 (2004) 9 Rohrer, G., see Palankovski, V. 224 (2004) 361 Oehme, M., see Jutzi, M 224 (2004) 170 Rohrer, G., see Wagner, S. 224 (2004) 365 Oh, H., see Shim, J.C. 224 (2004) 260 Rosenblad, C., see Buschbeck, H.M. 224 (2004) 36 Ohmi, S., see Sasaki, D. 224 (2004) 270 Rosner, P., see Nguyen, L.H. 224 (2004) 134 Onge, S.A.S.T., see Harame, D.L. 224 (2004) 9 Roux, J.L., see Rennane, A. 224 (2004) 341 Onsongo, D., see Shi, Z. 224 (2004) 248 Riicker, H., see Winkler, W. 224 (2004) 297 Orcioni, S., see Crippa, P. 224 (2004) 429 Orcioni, S., see Crippa, P. 224 (2004) 434 Sadoh, T., H. Kanno, A. Kenjo and M. Miyao, Ortiz, J., see Watanabe, G. 224 (2004) 405 Ge-dependent morphological change in Ostling, M., see Haralson, E. 224 (2004) 330 poly-SiGe formed by Ni-mediated crystal- Ostling, M., see Suvar, E. 224 (2004) 336 lization 224 (2004) 227 Sadoh, T., see Tsunoda, 1. 224 (2004) 231 Palankovski, V., and S. Selberherr, The state-of- Sadovnikov, A.. T. Krakowski and M. El- the-art in simulation for optimization of Diwany, Influence of the extrinsic base SiGe-HBTs 224 (2004) : on the base current kink in SiGe BJTs 224 (2004) 320 Palankovski, V., G. Rohrer, T. Grasser, S. Smir- Sadowy, J., D. Dubuc, J.P. Busquere, K. Gre- nov, H. Kosina and S. Selberherr, Rigorous nier, I. Telliez, J. Graffeuil, E. Tournier and modeling approach to numerical simulation R. Plana, SiGe based low noise amplifier of SiGe HBTs 224 (2004) for WLAN applications 224 (2004) 419 Palankovski, V., see Wagner, S. 224 (2004) Sakaguchi, T.. see Shim, J.C. 224 (2004) 260 Papavassiliou, C., see Michelakis, K. 224 (2004) : Sakai, A., see Ariyoshi, S. 224 (2004) 117 Papavassilliou, C., see Gaspari, V. 224 (2004) Sakai, A., see Egawa, T. 224 (2004) 104 Parker, E.H.C., see Myronov, M. 224 (2004) 2 Sakai, A., see Yamamoto, T. 224 (2004) 108 Parry, C., see Jutzi, M. 224 (2004) Sakai, A., see Zaima, S. 224 (2004) 215 Pei, Z., PS. Chen, S.W. Lee, L.S. Lai, S.C. Lu, Sakai, T., see Sasaki, D. 224 (2004) 270 M.-J. Tsai, W.H. Chang, W.Y. Chen, A.T. Sakuraba, M.. see Fujiu, M. 224 (2004) 206 Chou and T.M. Hsu, Room temperature 1.3 Sakuraba, M.., see Jeong, Y. 224 (2004) 197 and 1.5 ym electroluminescence from Si/ Sakuraba, M.., see Lee, D. 224 (2004) 254 Ge quantum dots (QDs)/Si multi-layers 224 (2004) 165 Sakuraba, M., see Muto, D. 224 (2004) 210 Pei, Z., see Chen, W.-Y. 224 (2004) 148 Sakuraba, M., see Noh, J. 224 (2004) 77 Penkov, A., see Kriiger, D. 224 (2004) 51 Sakuraba, M., see Sasaki, D. 224 (2004) 270 Persson, P.O.A., see Hallstedt, J. 224 (2004) 46 Sakuraba, M., see Shimamune, Y. 224 (2004) 202 Peytier, I., see Loo, R. 224 (2004) 63 Sakurai, M., see Yonenaga, I. 224 (2004) 193 Plana, R., see Rennane, A. 224 (2004) 341 Samanta, S.K.,G.K. Dalapati, S. Chatterjee and Plana, R., see Sadowy, J. 224 (2004) 419 C.K. Maiti, Minority carrier lifetime and Pu, L., see Yang, H.G. 224 (2004) 394 diffusion length in Si, , ,Ge,C, and Si, _,C, heterolayers 224 (2004) 283 Radamson, H., see Haralson, E 224 (2004) 330 Samanta, S.K., see Chatterjee, S. 224 (2004) 288 Radamson, H.H., see Hallstedt, J. 224 (2004) 46 Samoilov, A., see Kim, Y. 224 (2004) 175 Radamson, H.H., see Suvar, E. 224 (20043)3 6 Sasaki, D., S. Ohmi, M. Sakuraba, J. Murota Ramachandran, V., see Harame, D.L. 224 (2004) 9 and T. Sakai, Proposal of a multi-layer Ramm, J., see Buschbeck, H.M 224 (2004) 36 channel MOSFET: the application of selec- Ranade, P., see Takeuchi, H. 224 (2004) 73 tive etching for Si/SiGe stacked layers 224 (2004) 270 VI Author Index Sawano, K., S. Koh, Y. Hirose, T. Hattori, K. Strunk, H.P., see Nguyen, L.H. 224 (2004) Nakagawa and Y. Shiraki, Formation of thin Sturm, J.C., see Stewart, EJ. 224 (2004) SiGe virtual substrates by ion implantation Stutz, S., see Tsujino, S. 224 (2004) into Si substrates 224 (2004) 99 Subbanna, S., see Harame, D.L. 224 (2004) Sazaki, G., see Kutsukake, K. 224 (2004) 95 Suemitsu, M., see Murata, T. 224 (2004) Schad, K.-B., see Schumacher, H. 224 (2004) 410 Suemitsu, M., see Senthil. K. 224 (2004) Schafer, H., J. Bock, R. Stengl, H. Knapp, K. Sugii, N., see Ishida, T. 224 (2004) Aufinger, M. Wurzer, S. Boguth, M. Rest, R. Sugiyama, N., see Takagi, S.-i. 224 (2004) Schreiter and T.F. Meister, Selective epitax- Sugiyama, N., see Usuda, K. 224 (2004) ial growth of SiGe:C for high speed HBTs 224 (2004) 18 Sugiyama, N., Y. Moriyama, S. Nakaharai, T. Schley, P., see Tillack, B. 224 (2004) 55 Tezuka, T. Mizuno and S. Takagi, Kinetics Schley, P.. see Winkler, W. 224 (2004) 297 of epitaxial growth of Si and SiGe films on Schmidt, D., see Winkler, W. 224 (2004) 297 (1 1 0) Si substrates 224 (2004) Schmidt, O.G., see Denker, U. 224 (2004) 127 Suvar, E., E. Haralson, H.H. Radamson, Y.-B Schéllhorn, C., see Jutzi, M. 224 (2004) 170 Wang, J.V. Grahn, B.G. Malm and M. Scholz, R., see Winkler, W. 224 (2004) 297 Ostling, Characterization of leakage current Schreiter, R., see Schafer, H. 224 (2004) 18 related to a selectively grown collector in Schumacher, H., P. Abele, E. S6nmez, K.-B. SiGeC heterojunction bipolar transistor Schad and A. Trasser, Low-cost circuit structure 224 (2004) solutions for micro- and millimeter-wave Suvar, E., see Hallstedt, J. 224 (2004) systems using commercially available SiGe Suvar, E., see Haralson, E. 224 (2004) technologies 224 (2004) 410 Segawa, Y., see Kutsukake, K. 224 (2004) 95 Takagi, S., see Sugiyama, N. 224 (2004) Seino, T., see Muto, D. 224 (2004) 210 Takagi, S.-i., see Usuda, K. 224 (2004) Selberherr, S., see Palankovski, V. 224 (2004) 312 Takagi, S.-i.. T. Mizuno, T. Tezuka, N. Selberherr, S., see Palankovski, V. 224 (2004) 361 Sugiyama, T. Numata, K. Usuda, Y. Mor- Selberherr, S., see Wagner, S. 224 (2004) 365 iyama, S. Nakaharai, J. Koga, A. Tanabe Senapati, B., see Tillack, B. 224 (2004) 55 and T. Maeda, Fabrication and device char- Senthil, K.. H. Nakazawa and M. Suemitsu, acteristics of — strained-Si-on-insulator Adsorption kinetics of dimethylsilane at (strained-SOLl) CMOS 224 (2004) S$i(0 0 1) 224 (2004) 183 Takahashi, K., see Fujiu, M. 224 (2004) Shen, B., see Yang, H.G. 224 (2004) 394 Takehiro, S., see Lee, D. 224 (2004) Shi, Y., see Yang, H.G. 224 (2004) 394 Takehiro, S., see Noh, J. 224 (2004) Shi, Z., D. Onsongo and S.K. Banerjee, Mobility Takeuchi, H., P. Ranade and T.-J. King, Low- and performance enhancement in compres- temperature dopant activation technology sively strained SiGe channel PMOSFETs 224 (2004) 248 using elevated Ge-S/D structure 224 (2004) 73 Shim, J.C., H. Oh, H. Choi, T. Sakaguchi, H. Takeuchi, S., see Ariyoshi, S. 224 (2004) 117 Kurino and M. Koyanagi, SiGe elevated Tanabe, A., see Takagi, S.-i. 224 (2004) 241 source/drain structure and nickel silicide Taoka, N., see Egawa, T. 224 (2004) 104 contact layer for sub 0.1 jum MOSFET Taoka, N., see Yamamoto, T. 224 (2004) 108 fabrication 224 (2004) Telliez, I., see Sadowy, J. 224 (2004) 419 Shimamune, Y., M. Sakuraba, J. Murota and B. Tezuka, T., see Sugiyama, N. 224 (2004) 188 Tillack, Formation of heavily P-doped Si Tezuka, T., see Takagi, S.-i. 224 (2004) 241 epitaxial film on Si(100) by multiple Tezuka, T., see Usuda, K. 224 (2004) 113 atomic-layer doping technique 224 (2004) 202 Tillack, B., see Kriiger, D. 224 (2004) 51 Shiraki, Y., see Sawano, K. 224 (2004) 99 Tillack, B., see Shimamune, Y. 224 (2004) 202 Shu, D.Y., see Wang, C.S. 224 (2004) 222 Tillack, B., see Winkler, W. 224 (2004) 297 Sigg, H., see Denker, U. 224 (2004) 127 Tillack, B., Y. Yamamoto, D. Knoll, B. Heine- Singaporewala, F., see Bera, L.K. 224 (2004) 278 mann, P. Schley, B. Senapati and D. Kriiger, Sluiter, M.H.F., see Yonenaga, I. 224 (2004) 193 High performance SiGe:C HBTs using Smirnov, S., see Palankovski, V. 224 (2004) 361 atomic layer base doping 224 (2004) S6nmez, E., see Schumacher, H. 224 (2004) 410 Todd, M.A., and K.D. Weeks, Low tempera- Stangl, J., see Kirfel, O. 224 (2004) 139 ture, high growth rate epitaxial silicon and Stengl, R., see Schifer, H. 224 (2004) 18 silicon germanium alloy films 224 (2004) 41 Stewart, E.J., and J.C. Sturm, Segregation of Toumazou, C., see Michelakis, K. 224 (2004) 386 boron to polycrystalline and single-crystal Tournier, E., see Sadowy, J. 224 (2004) 419 Si, _,-,Ge,C, and Si, _,C, layers 224 (2004) 87 Trasser, A., see Schumacher, H. 224 (2004) 410 Stricker, A.D., J.B. Johnson, G. Freeman and J.- Tsai, M.-J., see Lee, S.W. 224 (2004) 152 S. Rieh, Design and optimization of a 200 Tsai, M.-J., see Pei, Z. 224 (2004) 165 GHz SiGe HBT collector profile by TCAD 224 (2004) 324 Tsai, M.-J., see Wang, C.S. 224 (2004) 222 Author Index Tsuchiya, T., see Lee, D. 224 (2004) 254 W. Hoppner, D. Knoll, D. Kriiger, B. Kuck, Tsujino, S.. S. Mentese, L. Diehl, E. Miiller, R. Kurps, M. Marschmeyer, H. Richter, P B. Haas, D. Bachle, S. Stutz, D. Griitzma- Schley, D. Schmidt, R. Scholz, B. Tillack. cher, Y. Campidelli, O. Kermarrec and D. Wolansky, H.-E. Wulf, Y. Yamamoto, P. D. Bensahel, Resonant tunneling in Zaumseil, Circuit applications of high-per- Si-SiGe superlattices on relaxed buffer sub- formance SiGe:C HBTs integrated in BiC- Strates 224 (2004) 377 MOS technology 224 (2004) 297 Tsunoda, I., A. Kenjo, T. Sadoh and M. Miyao, Wohl, G., see Jutzi, M. 224 (2004) 170 Enhanced crystal nucleation in a-SiGe/SiO, Wolansky, D., see Winkler, W. 224 (2004) 297 by ion-irradiation assisted annealing 224 (2004) 231 Wulf, H.-E., see Winkler, W. 224 (2004) 297 Turchetti, C., see Crippa, P. 224 (2004) 429 Wurzer, M., see Schiifer, H. 224 (2004) 18 Turchetti, C., see Crippa, P. 224 (2004) 434 Yam, V., see Nguyen, L.H. 224 (2004) 134 Ujihara, T., see Kutsukake, K. 224 (2004) 95 Yam, V., V. Le Thanh, D. Débarre, Y. Zheng and Usami, N., see Kutsukake, K. 224 (2004) 95 D. Bouchier, Kinetics of Si capping process Usuda, K., see Takagi, S.-i. 224 (2004) 241 of Ge/Si(0 0 1) quantum dots 224 (2004) 143 Usuda, K., T. Mizuno, T. Tezuka, N. Sugiyama, Yamamoto, T., A. Sakai, T. Egawa, N. Taoka, Y. Moriyama, S. Nakaharai and S.-i. O. Nakatsuka, S. Zaima and Y. Yasuda, Takagi, Strain relaxation of strained-Si Dislocation structures and strain-relaxation layers on SiGe-on-insulator (SGOI) struc- in SiGe buffer layers on Si (0.0 1) substrates tures after mesa isolation 224 (2004) 113 with an ultra-thin Ge interlayer 224 (2004) 108 Yamamoto, T., see Egawa, T. 224 (2004) 104 Van Nieuwenhuysen, K., see Meunier-Beillard, Yamamoto, Y., see Kriiger, D. 224 (2004) 51 P. 224 (2004) 31 Yamamoto, Y., see Tillack, B. 224 (2004) 55 Vandervorst, W., see Delhougne, R. 224 (2004) 91 Yamamoto, Y., see Winkler, W. 224 (2004) 297 Vandervorst, W., see Meunier-Beillard, P. 224 (2004) 31 Yang, H.G., Y. Shi, L. Pu, R. Zhang, B. Shen, P. Velazquez-Perez, J.E., see Gaspari, V. 224 (2004) 390 Han, S.L. Gu and Y.D. Zheng, Nonvolatile Verheyen, P., see Loo, R. 224 (2004) 63 memory based on Ge/Si hetero-nanocrys- Verheyen, P., see Loo, R. 224 (2004) 292 tals 224 (2004) 394 Vilches, A., see Michelakis, K. 224 (20043)8 6 Yang, T.-Y., see Hua, W.-C. 224 (2004) 425 Yap, J., see Bera, L.K. 224 (2004) 278 Wagner, S., V. Palankovski, G. Rohrer, T. Yasuda, Y., see Ariyoshi, S. 224 (2004) 117 Grasser and S. Selberherr, Direct extraction Yasuda, Y., see Egawa, T. 224 (2004) 104 feature for scattering parameters of SiGe- Yasuda, Y., see Yamamoto, T. 224 (2004) 108 HBTs 224 (2004) 365 Yasuda, Y., see Zaima, S. 224 (2004) 215 Wang, C.S., D.Y. Shu, W.Y. Hsieh and M.-J. Yonenaga, I., M. Sakurai, M.H.F. Sluiter and Y. Tsai, Reactive ion etching of Si, _G e, alloy Kawazoe, Local atomic structure in Czo- with hydrogen bromide 224 (2004) 222 chralski-grown Ge, _S i, bulk alloys 224 (2004) 193 Wang, Y.-B., see Hallstedt, J. 224 (2004) 46 Wang, Y.-B., see Haralson, E. 224 (2004) 330 Zaima, S., O. Nakatsuka, A. Sakai, J. Murota Wang, Y.-B., see Suvar, E. 224 (2004) 336 and Y. Yasuda, Interfacial reaction and Washio, K., High-speed SiGe HBTs and their electrical properties in Ni/Si and Ni/ applications 224 (2004) 306 SiGe(C) contacts 224 (2004) 215 Watanabe, G., J. Ortiz and R. Holbrook, High Zaima, S., see Ariyoshi, S. 224 (2004) 117 performance rf front end circuits using Zaima, S., see Egawa, T. 224 (2004) 104 SiGe:C BiCMOS + copper technologies 224 (2004) 405 Zaima, S., see Yamamoto, T. 224 (2004) 108 Weber, O., see Ducroquet, F. 224 (2004) 274 Zaumseil, P., see Winkler, W. 224 (2004) 297 Weeks, K.D., see Todd, M.A. 224 (2004) 41 Zerounian, N., see Aniel, F. 224 (2004) 370 Wen, J., see Brabant, P. 224 (2004) 347 Zhang, B., see Kutsukake, K. 224 (2004) 95 Whall, T.E., see Myronov, M. 224 (2004) 265 Zhang, J., see Michelakis, K. 224 (2004) 386 Wiltsche, S., see Buschbeck, H.M. 224 (2004) 36 Zhang, R., see Yang, H.G. 224 (2004) 394 Winkler, W., J. Borngriber, B. Heinemann, H. Zheng, Y., see Calmes, C. 224 (2004) 122 Riicker, R. Barth, J. Bauer, D. Bolze, J. Zheng, Y., see Yam, V. 224 (2004) 143 Drews, K.-E. Ehwald, T. Grabolla, U. Haak, Zheng, Y.D., see Yang, H.G. 224 (2004) 394 applied surface science ELSEVIER Applied Surface Science 224 (2004) VIII-XXV www.elsevier.com locate apsusc Subject Index Alloys Argon Low temperature, high growth rate epitaxial Ar plasma irradiation effects in atomically silicon and silicon germanium alloy films, controlled Si epitaxial growth, D. Muto, M.A. Todd and K.D. Weeks 224 (2004) 41 M. Sakuraba, T. Seino and J. Murota 224 (2004) 210 Growth of high quality epitaxial Si, _, ,Ge,C, layers by using chemical vapor deposition, J. Hallstedt, E. Suvar, P.O.A. Persson, L. Hultman, Y.-B. Wang and H.H. Radamson 224 (2004) 46 Arsenic Reactive ion etching of Si, ,Ge, alloy with hydrogen bromide, C.S. Wang, D.Y. Shu, On the mechanism of ion-implanted As diffu- W.Y. Hsieh and M.-J. Tsai 224 (2004) sion in relaxed SiGe, S. Eguchi, J.J. Lee, S.J. Rhee, D.L. Kwong, M.L. Lee, E.A. Fitzgerald, I. Aberg and J.L. Hoyt 224 (2004) 59 Ammonia Characterization of As ion-implanted layers in strained-Si/SiGe/Si hetero-structures, T. Epitaxial growth of N delta doped Si films on Ishida, S. Irieda, T. Inada and N. Sugii 224 (2004) 82 Si(1 0 0) by alternately supplied NH, and SiH,, Y. Jeong, M. Sakuraba and J. Murota 224 (2004) Atomic force microscopy Annealing Production-ready dry cleaning and deposition Low-temperature dopant activation technology processes for low-temperature Si and SiGe using elevated Ge-S/D structure, H. Takeu- epitaxy, H.M. Buschbeck, A. Erhart, Y. chi, P. Ranade and T.-J. King 224 (2004) Goeggel, C. Rosenblad, S. Wiltsche, J. Characterization of As ion-implanted Ramm, A. Dommann and M. Kummer 224 (2004) 36 layers in strained-Si/SiGe/Si hetero-struc- Low temperature, high growth rate epitaxial tures, T. Ishida, S. Irieda, T. Inada and N. silicon and silicon germanium alloy films, Sugii 224 (2004) M.A. Todd and K.D. Weeks 224 (2004) 41 Fabrication of SiGe-on-insulator by rapid ther- Formation of thin SiGe virtual substrates by ion mal annealing of Ge on Si-on-insulator implantation into Si substrates, K. Sawano, substrate, K. Kutsukake, N. Usami, K. Fuji- S. Koh, Y. Hirose, T. Hattori, K. Nakagawa wara, T. Ujihara, G. Sazaki, K. Nakajima, and Y. Shiraki 224 (2004) 99 B. Zhang and Y. Segawa 224 (2004) Strain-relaxation mechanisms of SiGe layers Influence of thermal annealing on composi- formed by two-step growth on Si(0 0 1) tional mixing and crystallinity of highly substrates, T. Egawa, A. Sakai, T. Yama- selective grown Si dots with Ge core, Y. moto, N. Taoka, O. Nakatsuka, S. Zaima Darma, H. Murakami and S. Miyazaki 224 (2004) and Y. Yasuda 224 (2004) 104 Enhanced crystal nucleation in a-SiGe/SiO, by Intermixing in Ge hut cluster islands, U. Den- ion-irradiation assisted annealing, I. Tsu- ker, H. Sigg and O.G. Schmidt 224 (2004) 127 noda, A. Kenjo, T. Sadoh and M. Miyao 224 (2004) 2 Selective epitaxial growth of Ge quantum dots SiGe elevated source/drain structure and nickel on patterned SiO,/Si(0 0 1) surfaces, L.H. silicide contact layer for sub 0.1 pm Nguyen, V. LeThanh, D. Débarre, V. Yam, MOSFET fabrication, J.C. Shim, H. Oh, M. Halbwax, M. El Kurdi, D. Bouchier, P. H. Choi, T. Sakaguchi, H. Kurino and M. Rosner, M. Becker, M. Benamara and H.P. Koyanagi 224 (2004) 260 Strunk 224 (2004) 134 doi: 10.1016/S0169-4332(04)00075-3 Subject Index Kinetics of Si capping process of Ge/Si(0 0 1) Despotopoulos, V. Gaspari, A. Vilches, K quantum dots, V. Yam, V. Le Thanh, D. Fobelets, C. Papavassiliou, C. Toumazou Deébarre, Y. Zheng and D. Bouchier 224 (2004) 143 and J. Zhang 224 (2004) 386 Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treat- ments, S.W. Lee, LJ. Chen, PS. Chen, Boron M.-J. Tsai, C.W. Liu, W.Y. Chen and T.M. Hsu 224 (2004) 152 In situ B doping of SiGe(C) using BCI, in Room temperature 1.3 and 1.5 jum electrolu- ultraclean hot-wall LPCVD, Y. Kunii, Y. minescence from Si/Ge quantum dots Inokuchi, A. Moriya, H. Kurokawa and J. (QDs)/Si multi-layers, Z. Pei, P.S. Chen, Murota 224 (2004) 68 S.W. Lee, L.S. Lai, S.C. Lu, M.-J. Tsai, Relationship between impurity (B or P) and W.H. Chang, W.Y. Chen, A.T. Chou and carrier concentration in SiGe(C) epitaxial T.M. Hsu 224 (2004) 165 film produced by thermal treatment, J. Noh, Kinetics of epitaxial growth of Si and SiGe S. Takehiro, M. Sakuraba and J. Murota 224 (2004) 77 films on (1 1 0) Si substrates, N. Sugiyama, Y. Moriyama, S. Nakaharai, T. Tezuka, T. Mizuno and S. Takagi 224 (2004) 188 Carbides Auger electron spectroscopy Roughening mechanisms of tensily strained Si, _,_,Ge,C, films grown by UHV-CVD: evidence of a carbon surface diffusion Characterization of Ge gradients in SiGe HBTs related mechanism, C. Calmes, D. Bouch- by AES depth profile simulation, D. Krii- ier, C. Clere and Y. Zheng 224 (2004) 122 ger, A. Penkov, Y. Yamamoto, A. Gor- yachko and B. Tillack 224 (2004) 51 Electrical properties of Si, _,C,/Si/SiO, inter- face for sub 50 nm strained-channel nMOS- A new technique to fabricate ultra-shallow- FETs, F. Ducroquet, T. Ernst, O. Weber, junctions, combining in situ vapour HCl J.-M. Hartmann, V. Loup, P. Besson, L. etching and in situ doped epitaxial SiGe Brévard, J.L. Di Maria and S. Deleonibus 224 (2004) 274 re-growth, R. Loo, M. Caymax, P. Meunier- Minority carrier lifetime and diffusion length in Beillard, I. Peytier, F. Holsteyns, S. Kubi- Si,_,_,Ge,C, and Si, ,C, heterolayers, cek, P. Verheyen, R. Lindsay and O. Richard 224 (2004) 63 S.K. Samanta, G.K. Dalapati, S$. Chatterjee and C.K. Maiti 224 (2004) 283 Electrical properties of ZrO, films on Boron Si, _,_,Ge,C, epitaxial layers, S. Chatter- jee, G.K. Dalapati, $.K. Samanta and C.K. Fabrication of 0.12 jm pMOSFETs on high Ge Maiti 224 (2004) 288 Characterization of leakage current related to a fraction Si/Si,;_,Ge,/Si(1 0 0) heterostruc- selectively grown collector in SiGeC het- ture with ultrashallow source/drain formed using B-doped SiGe CVD, D. Lee, S. Take- erojunction bipolar transistor structure, E. Suvar, E. Haralson, H.H. Radamson, Y.-B. hiro, M. Sakuraba, J. Murota and T. Tsu- Wang, J.V. Grahn, B.G. Malm and M. chiya 224 (2004) 254 Ostling 224 (2004) 336 High performance rf front end circuits using Bismuth SiGe:C BiCMOS + copper technologies, G. Watanabe, J. Ortiz and R. Holbrook 224 (2004) 405 High performance rf front end circuits using SiGe:C BiCMOS + copper technologies, Carbon G. Watanabe, J. Ortiz and R. Holbrook 224 (2004) 405 Selective epitaxial growth of SiGe:C for high Bond structures speed HBTs, H. Schafer, J. Bock, R. Stengl, H. Knapp, K. Aufinger, M. Wurzer, S. Resonant tunneling in Si-SiGe superlattices on Boguth, M. Rest, R. Schreiter and T.F. relaxed buffer substrates, S. Tsujino, S. Meister 224 (2004) 18 Mentese, L. Diehl, E. Miiller, B. Haas, D. > aS carrier gas: an alternative to H, for Bichle, S. Stutz, D. Griitzmacher, Y. Cam- enhanced epitaxy of Si, SiGe and SiGe:C, pidelli, O. Kermarrec and D. Bensahel 224 (2004) 377 P. Meunier-Beillard, M. Caymax, K. Van SiGe virtual substrate HMOS transistor for Nieuwenhuysen, G. Doumen, B. Brijs, M. analogue applications, K. Michelakis, S. Hopstaken, L. Geenen and W. Vandervorst 224 (2004) 31 X Subject Index Growth of high quality epitaxial Si, , ,Ge,C Growth of high quality epitaxial Si, _,_ ,Ge,C, layers by using chemical vapor deposition, layers by using chemical vapor deposition, J. Hallstedt, E. Suvar, P.O.A. Persson, L. J. Hallstedt, E. Suvar, P.O.A. Persson, L. Hultman, Y.-B. Wang and H.H. Radamson 224 (2004) 46 Hultman, Y.-B. Wang and H.H. Radamson 224 (2004) In situ B doping of SiGe(C) using BCI, in Characterization of Ge gradients in SiGe HBTs ultraclean hot-wall LPCVD, Y. Kunii, Y. by AES depth profile simulation, D. Krii- Inokuchi, A. Moriya, H. Kurokawa and J. ger, A. Penkov, Y. Yamamoto, A. Gor- Murota 224 (2004) 68 yachko and B. Tillack 224 (2004) Development of a new type of SiGe thin strain High performance SiGe:C HBTs using atomic relaxed buffer based on the incorporation of layer base doping, B. Tillack, Y. Yama- a carbon-containing layer, R. Delhougne, P. moto, D. Knoll, B. Heinemann, P. Schley, Meunier-Beillard, M. Caymax, R. Loo and B. Senapati and D. Kriiger 224 (2004) W. Vandervorst 224 (2004) 91 A new technique to fabricate ultra-shallow-junc- Effect of carbon on the thermal stability of a Si tions, combining in situ vapour HCI etching atomic layer on Ge(l 0 0), M. Fujiu, K. and in situ doped epitaxial SiGe re-growth, Takahashi, M. Sakuraba and J. Murota 224 (2004) 206 R. Loo, M. Caymax, P. Meunier-Beillard, I. Interfacial reaction and electrical properties in Peytier, F. Holsteyns, S. Kubicek, P. Ver- Ni/Si and Ni/SiGe(C) contacts, S. Zaima, heyen, R. Lindsay and O. Richard 224 (2004) O. Nakatsuka, A. Sakai, J. Murota and Y. In situ B doping of SiGe(C) using BCI, in Yasuda 224 (20042)1 5 ultraclean hot-wall LPCVD, Y. Kunii, Y. Circuit applications of high-performance Inokuchi, A. Moriya, H. Kurokawa and J. SiGe:C HBTs integrated in BiCMOS tech- Murota 224 (2004) nology, W. Winkler, J. Borngriiber, B. Hei- Roughening mechanisms of tensily strained nemann, H. Riicker, R. Barth, J. Bauer, D. Si,_, _,Ge,C, films grown by UHV-CVD: Bolze, J. Drews, K.-E. Ehwald, T. Grabolla, evidence of a carbon surface diffusion U. Haak, W. Hoppner, D. Knoll, D. Kriiger, related mechanism, C. Calmes, D. Bouch- B. Kuck, R. Kurps, M. Marschmeyer, H. ier, C. Clere and Y. Zheng 224 (2004) 122 Richter, P. Schley, D. Schmidt, R. Scholz, Optical properties of stacked Ge/Si quantum B. Tillack, D. Wolansky, H.-E. Wulf, Y. dots with different spacer thickness grown Yamamoto and P. Zaumseil 224 (2004) 297 by chemical vapor deposition, W.-Y. Chen, The effect of C on emitter—base design for a W.-H. Chang, A.-T. Chou, T.-M. Hsu, P.-S. single-polysilicon SiGe:C HBT with an 1IDP Chen, Z. Pei and L.-S. Lai 224 (2004) 148 emitter, E. Haralson, E. Suvar, G. Malm, H. Influence of thermal annealing on composi- Radamson, Y.-B. Wang and M. Ostling 224 (2004) 330 tional mixing and crystallinity of highly High performance rf front end circuits using selective grown Si dots with Ge core, SiGe:C BiCMOS + copper technologies, Y. Darma, H. Murakami and S. Miyazaki 224 (2004) 156 G. Watanabe, J. Ortiz and R. Holbrook 224 (2004) 405 Room temperature 1.3 and 1.5 yum electrolu- minescence from Si/Ge quantum dots (QDsy/Si multi-layers, Z. Pei, P.S. Chen, Chemical vapour deposition S.W. Lee, L.S. Lai, S.C. Lu, M.-J. Tsai, W.H. Chang, W.Y. Chen, A.T. Chou and T.M. Hsu 224 (2004) 165 Avoiding loading effects and facet growth. Key GeH, adsorption on Si(0 0 1) at RT: transfer of parameters for a successful implementation H atoms to Si sites and atomic exchange of selective epitaxial SiGe deposition for between Si and Ge, T. Murata and M. HBT-BiCMOS and high-mobility hetero- channel pMOS devices, R. Loo and M. Suemitsu 224 (2004) 179 Caymax 224 (2004) Kinetics of epitaxial growth of Si and SiGe N> as carrier gas: an alternative to H, for films on (1 1 0) Si substrates, N. Sugiyama, enhanced epitaxy of Si, SiGe and SiGe:C, Y. Moriyama, S. Nakaharai, T. Tezuka, P. Meunier-Beillard, M. Caymax, K. Van T. Mizuno and S. Takagi 224 (2004) 188 Nieuwenhuysen, G. Doumen, B. Brijs, M. Epitaxial growth of N delta doped Si films on Hopstaken, L. Geenen and W. Vandervorst 224 (2004) Si(1 0 0) by alternately supplied NH, and Production-ready dry cleaning and deposition SiH,, Y. Jeong, M. Sakuraba and J. Murota 224 (2004) 197 processes for low-temperature Si and SiGe Formation of heavily P-doped Si epitaxial film epitaxy, H.M. Buschbeck, A. Erhart, Y. on Si(1 0.0) by multiple atomic-layer dop- Goeggel, C. Rosenblad, S. Wiltsche, J. ing technique, Y. Shimamune, M. Sakuraba, Ramm, A. Dommann and M. Kummer 224 (2004) J. Murota and B. Tillack 224 (2004) 202 Low temperature, high growth rate epitaxial Effect of carbon on the thermal stability of a Si silicon and silicon germanium alloy films, atomic layer on Ge(l 0 0), M. Fujiu, M.A. Todd and K.D. Weeks 224 (2004) K. Takahashi, M. Sakuraba and J. Murota 224 (2004) 206

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Applied Surface Science 224 (2004) I-VII www.elsevier.com locate apsusc Author Index Abele, P., see Schumacher, H. 224 (2004) 410 Bouchier, D., see Nguyen, L.H. 224 (2004) 134 Aberg, L., see Eguchi, S. 224 (2004) 59 Bouchier, D., see Yam, V. 224 (2004) 143 Adde, R., see Aniel, F. 224 (2004) 370 Brabant, P., J. Wen, J. Italiano, T. Landin, N. Ahigren, D., see Harame, D.L. 224 (2004) 9 Cody and L. Haen, Achieving a SiGe HBT Anderson, F., see Harame, D.L. 224 (2004) 9 epitaxial emitter with novel low thermal Aniel, F.. M. Enciso, S. Richard, L. Giguerre, budget technique 224 (2004) 347 N. Zerounian, P. Crozat, R. Adde, T. Hack- Braithwaite, G., see Bera, L.K. 224 (2004) 278 barth, J.-.H. Herzog and U. Konig, Micro- Brevard, L., see Ducroquet, F. 224 (2004) 274 wave performances of silicon Brijs, B., see Meunier-Beillard, P. 224 (2004) 31 heterostructure-FETs 224 (2004) Bulsara, M.T., see Bera, L.K. 224 (2004) 278 Ariyoshi, S., S. Takeuchi, O. Nakatsuka, A. Buschbeck, H.M., A. Erhart, Y. Goeggel, C. Sakai, S. Zaima and Y. Yasuda, Influence Rosenblad, S. Wiltsche, J. Ramm, A. Dom- of Si,_ Ge, interlayer on the initial growth mann and M. Kummer, Production-ready of SiGeC on Si(1 0 0) 224 (2004) dry cleaning and deposition processes for Asano, T., see Kudoh, T. 224 (2004) ; low-temperature Si and SiGe epitaxy 224 (2004) 36 Aufinger, K., see Schafer, H. 224 (2004) Busquere, J.P., see Sadowy, J. 224 (2004) 419 Bichle, D., see Tsujino, S. 224 (2004) : Calmes, C.. D. Bouchier, C. Clere and Y. Balasubramanian, N., see Bera, L.K. 224 (2004) 2 Zheng, Roughening mechanisms of tensily Banerjee, S.K., see Shi, Z. 224 (2004) 2 strained Si, ,_,Ge,C, films grown by Bartels, M., B. Neinhiis, C. Jungemann and B. UHV-CVD: evidence of a carbon surface Meinerzhagen, Evaluation of compact noise diffusion related mechanism 224 (2004) 122 modeling for Si/SiGe HBTs based on hier- Campidelli, Y., see Tsujino, S. 224 (2004) 377 archical hydrodynamic noise simulation 224 (2004) Caymax, M., see Delhougne, R. 224 (2004) 91 Bartels, M., see Meinerzhagen, B. 224 (2004) Caymax, M., see Loo, R. 224 (2004) 24 Barth, R.. see Winkler, W. 224 (2004) 2 Caymax, M., see Loo, R. 224 (2004) 63 Bary, L., see Rennane, A. 224 (2004) Caymax, M., see Loo, R. 224 (2004) 292 Bauer, G., see Kirfel, O 224 (2004) Caymax, M., see Meunier-Beillard, P. 224 (2004) 31 Bauer, J., see Winkler, W. 224 (2004) 2 Chakravorty, A., R. Garg and C.K. Maiti, Com- Bauer, M., see Jutzi, M. 224 (2004) parison of state-of-the-art bipolar compact Becker, M., see Nguyen, L.H. 224 (2004) models for SiGe-HBTs 224 (2004) 354 Benamara, M., see Nguyen, L.H 224 (2004) Chang, W.-H., see Chen, W.-Y. 224 (2004) 148 Bensahel, D., see Tsujino, S. 224 (2004) Chang, W.H., see Pei, Z. 224 (2004) 165 Bera, L.K., S. Mathew, N. Balasubramanian, G. Chatterjee, S..G.K. Dalapati, S.K. Samanta and Braithwaite, M.T. Currie, F. Singaporewala, C.K. Maiti, Electrical properties of ZrO, J. Yap, R. Hammond, A. Lochtefeld, M.T. films on Si,_, ,Ge,C, epitaxial layers 224 (2004) 288 Bulsara and E.A. Fitzgerald, Analysis of Chatterjee, S., see Samanta, S.K. 224 (2004) 283 carrier generation lifetime in strained-Si/ Chen, LJ., see Lee, S.W. 224 (2004) 152 SiGe heterojunction MOSFETs from capa- Chen, P.-S., see Chen, W.-Y. 224 (2004) 148 citance transient 224 (2004) 278 Chen, P.S., see Lee, S.W. 224 (2004) 152 Berlin, D., see Kim, Y. 224 (2004) 175 Chen, P.S., see Pei, Z. 224 (2004) 165 Berroth, M., see Jutzi, M. 224 (2004) 170 Chen, W.Y., see Lee, S.W. 224 (2004) 152 Besson, P., see Ducroquet, F. 224 (2004) 274 Chen, W.Y., see Pei, Z. 224 (2004) 165 Bock, J., see Schiifer, H. 224 (2004) 18 Chen, W.-Y., W.-H. Chang, A.-T. Chou, T.-M. Boguth, S., see Schiifer, H. 224 (2004) 18 Hsu, P.-S. Chen, Z. Pei and L.-S. Lai, Bolze, D., see Winkler, W. 224 (2004) 297 Optical properties of stacked Ge/Si quan- Borngriiber, J., see Winkler, W. 224 (2004) 297 tum dots with different spacer thickness Bouchier, D., see Calmes, C. 224 (2004) 122 grown by chemicel vapor deposition 224 (2004) 148 doi: 10.1016/S0169-4332(04)00074- 1 Author Index Choi, H., see Shim, J.C. 224 (2004) 2 Eguchi, S., J.J. Lee, SJ. Rhee, D.L. Kwong, Chou, A.-T., see Chen, W.-Y. 224 (2004) MLL. Lee, E.A. Fitzgerald, 1. Aberg and J.L. Chou, A.T., see Pei, Z. 224 (2004) Hoyt, On the mechanism of ion-implanted Clerc, C., see Calmes, C. 224 (2004) As diffusion in relaxed SiGe 224 (2004) 59 Cody, N., see Brabant, P. 224 (2004) : Ehwald, K.-E., see Winkler, W. 224 (2004) 297 Collaert, N., see Loo, R. 224 (2004) 2 El Kurdi, M., see Nguyen, L.H. 224 (2004) 134 Coolbaugh, D., see Harame, D.L. 224 (2004) El-Diwany, M., see Sadovnikov, A. 224 (2004) 320 Cottrel, P.. see Harame, D.L. 224 (2004) Enciso, M., see Aniel, F. 224 (2004) 370 Cressler, J.D., see Harame, D.L. 224 (2004) Erhart, A., see Buschbeck, H.M. 224 (2004) Crippa, P.. S. Orcioni, F. Ricciardi and C. Ernst, T., see Ducroquet, F. 224 (2004) 2 Turchetti, A 4.4 to 5 GHz SiGe low noise amplifier 224 (2004) 429 Ferguson, R., see Gaspari, V. 224 (2004) Crippa, P.. S. Orcioni, F. Ricciardi and C. Fitzgerald, E.A., see Bera, L.K. 224 (2004) Turchetti, A DC-5 GHz NMOSFET SPDT Fitzgerald, E.A., see Eguchi, S. 224 (2004) T/R switch in 0.25-4um SiGe BiCMOS tech- Fobelets, K., see Gaspari, V. 224 (2004) 3 nology 224 (2004) 434 Fobelets, K., see Michelakis, K. 224 (2004) 3 Crozat, P., see Aniel, F. 224 (2004) 370 Freeman, G., see Harame, D.L. 224 (2004) Currie, M.T., see Bera, L.K. 224 (2004) 278 Freeman, G., see Stricker, A.D. 224 (2004) Fujiu, M., K. Takahashi, M. Sakuraba and J. Dalapati, G.K., see Chatterjee, S. 224 (2004) 288 Murota, Effect of carbon on the thermal Dalapati, G.K., see Samanta, S.K. 224 (2004) 283 stability of a Si atomic layer on Ge(1 0 0) 224 (2004) Darma, Y.. H. Murakami and S. Miyazaki, Fujiwara, K., see Kutsukake, K. 224 (2004) Influence of thermal annealing on compositional mixing and crystallinity of Gao, Q., see Rao, Y. 224 (2004) highly selective grown Si dots with Garg, R., see Chakravorty, A. 224 (2004) Ge core 224 (2004) Gaspari, V., K. Fobelets, J.E. Velazquez-Perez, Débarre, D., see Nguyen, L.H. 224 (2004) R. Ferguson, K. Michelakis, S$. Despoto- Débarre, D., see Yam, V. 224 (2004) poulos and C. Papavassilliou, Effect of Dehlinger, G., see Harame, D.L. 224 (2004) temperature on the transfer characteristic Deleonibus, S., see Ducroquet, F. 224 (2004) 2 of a 0.5 pm-gate Si:SiGe depletion-mode n- Delhougne, R., P. Meunier-Beillard, M. Cay- MODFET 224 (2004) 3 max, R. Loo and W. Vandervorst, Devel- Gaspari, V., see Michelakis, K. 224 (2004) 3 opment of a new type of SiGe thin strain Geenen, L., see Meunier-Beillard, P. 224 (2004) : relaxed buffer based on the incorporation of Giguerre, L., see Aniel, F. 224 (2004) : a carbon-containing layer 224 (2004) Goeggel, Y., see Buschbeck, H.M. 224 (2004) Delhougne, R., see Loo, R. 224 (2004) Goryachko, A., see Kriiger, D. 224 (2004) Denker, U., H. Sigg and O.G. Schmidt, Inter- Grabolla, T., see Winkler, W. 224 (2004) mixing in Ge hut cluster islands 224 (2004) Graffeuil, J., see Rennane, A. 224 (2004) 341 Despotopoulos, S., see Gaspari, V. 224 (2004) Graffeuil, J., see Sadowy, J. 224 (2004) 419 Despotopoulos, S., see Michelakis, K. 224 (2004) Grahn, J.V., see Suvar, E. 224 (2004) 336 Di Maria, J.L., see Ducroquet, F. 224 (2004) 2 Grasser, T., see Palankovski, V. 224 (2004) 361 Diehl, L., see Tsujino, S. 224 (2004) Grasser, T., see Wagner, S. 224 (2004) 365 Dommann, A., see Buschbeck, H.M. 224 (2004) 36 Greenberg, D., see Harame, D.L. 224 (2004) 9 Doumen, G., see Meunier-Beillard, P. 224 (2004) 31 Grenier, K., see Sadowy, J. 224 (2004) 419 Drews, J., see Winkler, W. 224 (2004) 297 Griitzmacher, D., see Kirfel, O. 224 (2004) 139 Dubuc, D., see Sadowy, J. 224 (20044)1 9 Griitzmacher, D., see Tsujino, S. 224 (2004) 377 Ducroquet, F., T. Ernst, O. Weber, J.-M. Hart- Gu, S.L., see Yang, H.G. 224 (2004) 394 mann, V. Loup, P. Besson, L. Brévard, J.L. Di Maria and S. Deleonibus, Electrical Haak, U., see Winkler, W. 224 (2004) 297 properties of Si, _,C,/Si/SiO, interface for Haas, B., see Tsujino, S. 224 (2004) 377 sub 50 nm strained-channel nMOSFETs 224 (2004) 274 Hackbarth, T., see Aniel, F. 224 (2004) 370 Dunn, J.S., see Harame, D.L. 224 (2004) 9 Hackbarth, T., see Myronov, M. 224 (2004) 265 Durov, S., see Myronov, M. 224 (2004) 265 Haen, L., see Brabant, P. 224 (2004) 347 Halbwax, M., see Nguyen, L.H. 224 (2004) 134 Egawa, T., A. Sakai, T. Yamamoto, N. Taoka, Hallstedt, J., E. Suvar, P.O.A. Persson, L. Hult- O. Nakatsuka, S. Zaima and Y. Yasuda, man, Y.-B. Wang and H.H. Radamson, Strain-relaxation mechanisms of SiGe Growth of high quality — epitaxial layers formed by two-step growth on Si(O Si, _,_,Ge,C, layers by using chemical 0 1) substrates 224 (2004) 104 vapor deposition 224 (2004) 46 Egawa, T., see Yamamoto, T. 224 (2004) 108 Hammond, R., see Bera, L.K. 224 (2004) 278 Author Index Han, P.. see Yang, H.G. 224 (2004) 394 red optical fiber links operating at 1.25 Haralson, E., E. Suvar,G. Malm, H. Radamson, Gbit/s 224 (2004) 170 Y.-B. Wang and M. Ostling, The effect of C on emitter—base design for a single-poly- Kanno, H., see Sadoh, T. 224 (2004) 227 silicon SiGe:C HBT with an IDP emitter 224 (2004) Kasai, K., see Kasamatsu, A. 224 (2004) 382 Haralson, E., see Suvar, E. 224 (2004) Kasamatsu, A., K. Kasai, K. Hikosaka, T. Mat- Harame, D.L., S.J. Koester, G. Freeman, P. sui and T. Mimura, 60 nm gate-length Si/ Cottrel, K. Rim, G. Dehlinger, D. Ahlgren, SiGe HEMT 224 (2004) 382 J.S. Dunn, D. Greenberg, A. Joseph, F. Kasper, E.. and S. Heim, Challenges of high Ge Anderson, J.-S. Rieh, S.A.S.T. Onge, D. content silicon germanium structures 224 (2004) 3 Coolbaugh, V. Ramachandran, J.D. Cress- Kasper, E.. see Jutzi, M. 224 (2004) 170 ler and S. Subbanna, The revolution in Kawazoe, Y., see Yonenaga, I. 224 (2004) 193 SiGe: impact on device electronics 224 (2004) Kenjo, A., see Sadoh, T. 224 (2004) 227 Hartmann, J.-M., see Ducroquet, F. 224 (2004) 2 Kenjo, A., see Tsunoda, I. 224 (2004) 231 Hattori, T., see Sawano, K. 224 (2004) Kermarrec, O., see Tsujino, S. 224 (2004) 377 Heim, S., see Kasper, E. 224 (2004) Kern, K., see Kirfel, O. 224 (2004) 139 Heinemann, B., see Tillack, B. 224 (2004) Kim, Y., D. Berlin and A. Samoilov, Fabrica- Heinemann, B., see Winkler, W. 224 (2004) 2 tion of epitaxial SiGe optical waveguide Herzog, H.-J., see Myronov, M. 224 (2004) 2 structures 224 (2004) 175 Herzog, J.-.H., see Aniel, F 224 (2004) King, T.-J., see Takeuchi, H. 224 (2004) 73 Hesse, A., see Kirfel, O. 224 (2004) Kirfel, O., E. Miiller, D. Griitzmacher, K. Kern, Hikosaka, K., see Kasamatsu, A. 224 (2004) A. Hesse, J. Stangl, V. Holy and G. Bauer, Hirose, Y., see Sawano, K. 224 (2004) Shape and composition change of Ge dots Hock, G., see Myronov, M. 224 (2004) 2 due to Si capping 224 (2004) 139 Holbrook, R., see Watanabe, G. 224 (2004) 405 Knapp, H., see Schiffer, H. 224 (2004) 18 Holsteyns, F., see Loo, R. 224 (2004) 63 Knoll, D., see Tillack, B. 224 (2004) 55 Holy, V., see Kirfel, O. 224 (2004) 139 Knoll, D., see Winkler, W. 224 (2004) 297 Héppner, W., see Winkler, W. 224 (2004) 297 Koester, S.J.. see Harame, D.L. 224 (2004) 9 Hopstaken, M., see Meunier-Beillard, P. 224 (2004) 31 Koga, J., see Takagi, S.-i. 224 (2004) 241 Hoyt, J.L., see Eguchi, S. 224 (2004) 59 Koh, S., see Sawano, K. 224 (2004) 99 Hsieh, W.Y., see Wang, C.S. 224 (2004) 222 Konig, U., see Aniel, F. 224 (2004) 370 Hsu, T.-M., see Chen, W.-Y. 224 (2004) 148 Konig, U., see Myronov, M. 224 (2004) 265 Hsu, T.M., see Lee, S.W. 224 (2004) 152 Kosina, H., see Palankovski, V. 224 (2004) 361 Hsu, T.M., see Pei, Z. 224 (2004) 165 Koyanagi, M., see Shim, J.C. 224 (2004) 260 Hua, W.-C., T.-Y. Yang and C.W. Liu, The Krakowski, T., see Sadovnikov, A. 224 (2004) 320 comparison of isolation technologies and Kriiger, D., A. Penkov, Y. Yamamoto, A. Gor- device models on SiGe bipolar low noise yachko and B. Tillack, Characterization of amplifier 224 (2004) 425 Ge gradients in SiGe HBTs by AES depth Hultman, L., see Hallstedt, J. 224 (2004) profile simulation 224 (2004) 51 Kriiger, D., see Tillack, B. 224 (2004) 55 Inada, T., see Ishida, T. 224 (2004) Kriiger, D., see Winkler, W. 224 (2004) 297 Inokuchi, Y., see Kunii, Y. 224 (2004) Kubicek, S., see Loo, R. 224 (2004) 63 Irieda, S., see Ishida, T. 224 (2004) Kuchenbecker, J., see Rennane, A. 224 (20043)4 1 Ishida, T., S. Irieda, T. Inada and N. Sugii, Kuck, B., see Winkler, W. 224 (2004) 297 Characterization of As ion-implanted Kudoh, T., and T. Asano, Si/SiGe heterojunc- layers in strained-Si/SiGe/Si hetero-struc- tion collector for low loss operation of tures 224 (2004) Trench IGBT 224 (2004) 399 Italiano, J., see Brabant, P. 224 (2004) Kummer, M., see Buschbeck, H.M. 224 (2004) 36 Kunii, Y., Y. Inokuchi, A. Moriya, H. Kurokawa Jeong, Y., M. Sakuraba and J. Murota, Epitaxial and J. Murota, In situ B doping of SiGe(C) growth of N delta doped Si films on Si(1 0 using BCI, in ultraclean hot-wall LPCVD 224 (2004) 68 0) by alternately supplied NH, and SiH, 224 (2004) 197 Kurino, H., see Shim, J.C. 224 (2004) 260 Jiang, Z., see Rao, Y. 224 (2004) 160 Kurokawa, H., see Kunii, Y. 224 (2004) 68 Johnson, J.B., see Stricker, A.D. 224 (2004) 324 Kurps, R., see Winkler, W. 224 (2004) 297 Joseph, A., see Harame, D.L. 224 (2004) 9 Kutsukake, K., N. Usami, K. Fujiwara, T. Uji- Jungemann, C., see Bartels, M. 224 (2004) 350 hara, G. Sazaki, K. Nakajima, B. Zhang and Jungemann, C., see Meinerzhagen, B. 224 (2004) 235 Y. Segawa, Fabrication of SiGe-on-insula- Jutzi, M., M. Berroth, G. Wohl, C. Parry, M. tor by rapid thermal annealing of Ge on Si- Oehme, M. Bauer, C. Schéllhorn and E. on-insulator substrate 224 (2004) 95 Kasper, SiGe PIN photodetector for infra- Kwong, D.L., see Eguchi, S. 224 (2004) 59 IV Author Index Lai, L.-S., see Chen, W.-Y. 224 (2004) 148 Meunier-Beillard, P.. M. Caymax, K. Van Nieu- Lai, L.S., see Pei, Z. 224 (2004) 165 wenhuysen, G. Doumen, B. Brijs. M. Hop- Landin, T., see Brabant, P. 224 (2004) 347 staken, L. Geenen and W. Vandervorst, N, Le Thanh, V., see Yam, V. 224 (2004) 143 as carrier gas: an alternative to H, for Lee, D., S. Takehiro, M. Sakuraba, J. Murota enhanced epitaxy of Si, SiGe and SiGe:C 224 (2004) and T. Tsuchiya, Fabrication of 0.12 pm Meunier-Beillard, P., see Delhougne, R. 224 (2004) pMOSFETs on high Ge fraction Si/Si, Meunier-Beillard, P., see Loo, R. 224 (2004) Ge /Si(1 0.0) heterostructure with ultrashal- Meyer, K.D.. see Loo, R. 224 (2004) low source/drain formed using B-doped Michelakis, K., S. Despotopoulos, V. Gaspari, SiGe CVD 224 (2004) 25 A. Vilches, K. Fobelets, C. Papavassiliou, Lee, J.J., see Eguchi, S. 224 (2004) C. Toumazou and J. Zhang, SiGe virtual Lee, M.L., see Eguchi, S. 224 (2004) substrate HMOS transistor for analogue Lee, S.W., LJ. Chen, P.S. Chen, M.-J. Tsai, applications 224 (2004) : C.W. Liu, W.Y. Chen and T.M. Hsu, Michelakis, K., see Gaspari, V. 224 (2004) ° Improved growth of Ge quantum dots in Mimura, T., see Kasamatsu, A. 224 (2004) Ge/Si stacked layers by pre-intermixing Mironov, O.A., see Myronov, M. 224 (2004) treatments 224 (2004) 152 Miyao, M., see Sadoh, T. 224 (2004) Lee, S.W., see Pei, Z. 224 (2004) 165 Miyao, M., see Tsunoda, I. 224 (2004) LeThanh, V., see Nguyen, L.H. 224 (2004) 134 Miyazaki, S.. see Darma, Y. 224 (2004) Lindsay, R., see Loo, R. 224 (2004) 63 Mizuno, T., see Sugiyama, N. 224 (2004) Liu, C.W., see Hua, W.-C. 224 (2004) 425 Mizuno, T., see Takagi, S.-i. 224 (2004) Liu, C.W., see Lee, S.W. 224 (2004) 152 Mizuno, T., see Usuda, K. 224 (2004) Lochtefeld, A., see Bera, L.K. 224 (2004) 278 Moriya, A., see Kunii, Y. 224 (2004) Loo, R., and M. Caymax, Avoiding loading Moriyama, Y., see Sugiyama, N. 224 (2004) effects and facet growth. Key parameters Moriyama, Y., see Takagi, S.-i. 224 (2004) for a successful implementation of selective Moriyama, Y., see Usuda, K. 224 (2004) epitaxial SiGe deposition for HBT-BiC- Miiller, E., see Kirfel, O. 224 (2004) MOS and high-mobility hetero-channel Miiller, E., see Tsujino, S. 224 (2004) pMOS devices 224 (2004) Murakami, H., see Darma, Y. 224 (2004) Loo, R., M. Caymax, P. Meunier-Beillard, I. Murata, T., and M. Suemitsu, GeH, adsorption Peytier, F. Holsteyns, S. Kubicek, P. Ver- on Si(0 0 1) at RT: transfer of H atoms to Si heyen, R. Lindsay and O. Richard, A new sites and atomic exchange between Si and technique to fabricate ultra-shallow-junc- Ge 224 (2004) tions, combining in situ vapour HC] etching Murota, J., see Fujiu, M. 224 (2004) and in situ doped epitaxial SiGe re-growth 224 (2004) Murota, J., see Jeong, Y. 224 (2004) Loo, R., N. Collaert, P. Verheyen, M. Caymax, Murota, J., see Kunii, Y. 224 (2004) R. Delhougne and K.D. Meyer, Fabrication Murota, J., see Lee, D. 224 (2004) of 50 nm high performance strained-SiGe Murota, J., see Muto, D. 224 (2004) pMOSFETSs with selective epitaxial growth 224 (2004) 292 Murota, J., see Noh, J. 224 (2004) Loo, R., see Delhougne, R. 224 (2004) 91 Murota, J., see Sasaki, D. 224 (2004) Loup, V., see Ducroquet, F. 224 (2004) 274 Murota, J., see Shimamune, Y. 224 (2004) Lu, F., see Rao, Y. 224 (2004) 160 Murota, J., see Zaima, S. 224 (2004) Lu, S.C., see Pei, Z. 224 (2004) 165 Muto, D., M. Sakuraba, T. Seino and J. Murota, Ar plasma irradiation effects in atomically Maeda, T., see Takagi, S.-i. 224 (2004) 241 controlled Si epitaxial growth 224 (2004) Maiti, C.K., see Chakravorty, A. 224 (2004) 354 Myronov, M., S. Durov, O.A. Mironov, E.H.C. Maiti, C.K., see Chatterjee, S. 224 (2004) 288 Parker, T.E. Whall, T. Hackbarth, G. Hick, Maiti, C.K., see Samanta, S.K. 224 (2004) 283 H.-J. Herzog and U. Kénig, Low-frequency Malm, B.G., see Suvar, E. 224 (2004) 336 noise suppression and de characteristics Malm, G., see Haralson, E. 224 (2004) 330 enhancement in sub-jum metamorphic p- Marschmeyer, M., see Winkler, W. 224 (2004) 297 MOSFETs with strained Si, ,Gey > channel Mathew, S., see Bera, L.K. 224 (2004) 278 grown by MBE 224 (2004) 2 Matsui, T., see Kasamatsu, A. 224 (2004) 382 Meinerzhagen, B., C. Jungemann, B. Neinhiis Nakagawa, K., see Sawano, K. 224 (2004) and M. Bartels, Numerical simulation of Nakaharai, S., see Sugiyama, N. 224 (2004) 188 strained Si/SiGe devices: the hierarchical Nakaharai, S., see Takagi, S.-i. 224 (2004) 241 approach 224 (2004) 235 Nakaharai, S., see Usuda, K. 224 (2004) 113 Meinerzhagen, B., see Bartels, M. 224 (2004) 350 Nakajima, K., see Kutsukake, K. 224 (2004) 95 Meister, T.F., see Schiifer, H. 224 (2004) 18 Nakatsuka, O., see Ariyoshi, S. 224 (2004) 117 Mentese, S., see Tsujino, S. 224 (2004) 377 Nakatsuka, O., see Egawa, T. 224 (2004) 104 Author Index Nakatsuka, O., see Yamamoto, T 224 (2004) 108 Rao, Y., Q. Gao, Z. Jiang and F. Lu, Coupling Nakatsuka, O., see Zaima, S. 224 (2004) 215 effect dependent on the thickness of the Nakazawa, H., see Senthil, K 224 (2004) 183 spacer layer between double layers of quan- Neinhiis, B., see Bartels, M. 224 (2004) 350 tum dots 224 (2004) 160 Neinhiis, B., see Meinerzhagen, B. 224 (2004) 235 Rennane, A., L. Bary, J.L. Roux, J. Kuchen- Nguyen, L.H., V. LeThanh, D. Deébarre, V. becker, J. Graffeuil and R. Plana, Reliabil- Yam, M. Halbwax, M. El Kurdi, D. Bouch- ity properties of SiGe HBTs 224 (2004) 341 ier, P. Rosner, M. Becker, M. Benamara and Rest, M., see Schiifer, H. 224 (2004) 18 H.P. Strunk, Selective epitaxial growth of Rhee, SJ., see Eguchi, S. 224 (2004) 59 Ge quantum dots on patterned Si0,/Si(0 0 Ricciardi, F., see Crippa, P. 224 (2004) 429 1) surfaces 224 (2004) Ricciardi, F., see Crippa, P. 224 (2004) 434 Noh, J.. S. Takehiro, M. Sakuraba and J. Richard, O.. see Loo, R 224 (2004) 63 Murota, Relationship between impurity Richard, S., see Aniel, F 224 (2004) 370 (B or P) and carrier concentration in Richter, H., see Winkler, W. 224 (2004) 297 SiGe(C) epitaxial film produced by thermal Rieh, J.-S., see Harame, D.L. 224 (2004) 9 treatment 224 (2004) 77 Rich, J.-S., see Stricker, A.D. 224 (2004) 324 Numata, T., see Takagi, S.-i. 224 (2004) 241 Rim, K., see Harame, D.L. 224 (2004) 9 Rohrer, G., see Palankovski, V. 224 (2004) 361 Oehme, M., see Jutzi, M 224 (2004) 170 Rohrer, G., see Wagner, S. 224 (2004) 365 Oh, H., see Shim, J.C. 224 (2004) 260 Rosenblad, C., see Buschbeck, H.M. 224 (2004) 36 Ohmi, S., see Sasaki, D. 224 (2004) 270 Rosner, P., see Nguyen, L.H. 224 (2004) 134 Onge, S.A.S.T., see Harame, D.L. 224 (2004) 9 Roux, J.L., see Rennane, A. 224 (2004) 341 Onsongo, D., see Shi, Z. 224 (2004) 248 Riicker, H., see Winkler, W. 224 (2004) 297 Orcioni, S., see Crippa, P. 224 (2004) 429 Orcioni, S., see Crippa, P. 224 (2004) 434 Sadoh, T., H. Kanno, A. Kenjo and M. Miyao, Ortiz, J., see Watanabe, G. 224 (2004) 405 Ge-dependent morphological change in Ostling, M., see Haralson, E. 224 (2004) 330 poly-SiGe formed by Ni-mediated crystal- Ostling, M., see Suvar, E. 224 (2004) 336 lization 224 (2004) 227 Sadoh, T., see Tsunoda, 1. 224 (2004) 231 Palankovski, V., and S. Selberherr, The state-of- Sadovnikov, A.. T. Krakowski and M. El- the-art in simulation for optimization of Diwany, Influence of the extrinsic base SiGe-HBTs 224 (2004) : on the base current kink in SiGe BJTs 224 (2004) 320 Palankovski, V., G. Rohrer, T. Grasser, S. Smir- Sadowy, J., D. Dubuc, J.P. Busquere, K. Gre- nov, H. Kosina and S. Selberherr, Rigorous nier, I. Telliez, J. Graffeuil, E. Tournier and modeling approach to numerical simulation R. Plana, SiGe based low noise amplifier of SiGe HBTs 224 (2004) for WLAN applications 224 (2004) 419 Palankovski, V., see Wagner, S. 224 (2004) Sakaguchi, T.. see Shim, J.C. 224 (2004) 260 Papavassiliou, C., see Michelakis, K. 224 (2004) : Sakai, A., see Ariyoshi, S. 224 (2004) 117 Papavassilliou, C., see Gaspari, V. 224 (2004) Sakai, A., see Egawa, T. 224 (2004) 104 Parker, E.H.C., see Myronov, M. 224 (2004) 2 Sakai, A., see Yamamoto, T. 224 (2004) 108 Parry, C., see Jutzi, M. 224 (2004) Sakai, A., see Zaima, S. 224 (2004) 215 Pei, Z., PS. Chen, S.W. Lee, L.S. Lai, S.C. Lu, Sakai, T., see Sasaki, D. 224 (2004) 270 M.-J. Tsai, W.H. Chang, W.Y. Chen, A.T. Sakuraba, M.. see Fujiu, M. 224 (2004) 206 Chou and T.M. Hsu, Room temperature 1.3 Sakuraba, M.., see Jeong, Y. 224 (2004) 197 and 1.5 ym electroluminescence from Si/ Sakuraba, M.., see Lee, D. 224 (2004) 254 Ge quantum dots (QDs)/Si multi-layers 224 (2004) 165 Sakuraba, M., see Muto, D. 224 (2004) 210 Pei, Z., see Chen, W.-Y. 224 (2004) 148 Sakuraba, M., see Noh, J. 224 (2004) 77 Penkov, A., see Kriiger, D. 224 (2004) 51 Sakuraba, M., see Sasaki, D. 224 (2004) 270 Persson, P.O.A., see Hallstedt, J. 224 (2004) 46 Sakuraba, M., see Shimamune, Y. 224 (2004) 202 Peytier, I., see Loo, R. 224 (2004) 63 Sakurai, M., see Yonenaga, I. 224 (2004) 193 Plana, R., see Rennane, A. 224 (2004) 341 Samanta, S.K.,G.K. Dalapati, S. Chatterjee and Plana, R., see Sadowy, J. 224 (2004) 419 C.K. Maiti, Minority carrier lifetime and Pu, L., see Yang, H.G. 224 (2004) 394 diffusion length in Si, , ,Ge,C, and Si, _,C, heterolayers 224 (2004) 283 Radamson, H., see Haralson, E 224 (2004) 330 Samanta, S.K., see Chatterjee, S. 224 (2004) 288 Radamson, H.H., see Hallstedt, J. 224 (2004) 46 Samoilov, A., see Kim, Y. 224 (2004) 175 Radamson, H.H., see Suvar, E. 224 (20043)3 6 Sasaki, D., S. Ohmi, M. Sakuraba, J. Murota Ramachandran, V., see Harame, D.L. 224 (2004) 9 and T. Sakai, Proposal of a multi-layer Ramm, J., see Buschbeck, H.M 224 (2004) 36 channel MOSFET: the application of selec- Ranade, P., see Takeuchi, H. 224 (2004) 73 tive etching for Si/SiGe stacked layers 224 (2004) 270 VI Author Index Sawano, K., S. Koh, Y. Hirose, T. Hattori, K. Strunk, H.P., see Nguyen, L.H. 224 (2004) Nakagawa and Y. Shiraki, Formation of thin Sturm, J.C., see Stewart, EJ. 224 (2004) SiGe virtual substrates by ion implantation Stutz, S., see Tsujino, S. 224 (2004) into Si substrates 224 (2004) 99 Subbanna, S., see Harame, D.L. 224 (2004) Sazaki, G., see Kutsukake, K. 224 (2004) 95 Suemitsu, M., see Murata, T. 224 (2004) Schad, K.-B., see Schumacher, H. 224 (2004) 410 Suemitsu, M., see Senthil. K. 224 (2004) Schafer, H., J. Bock, R. Stengl, H. Knapp, K. Sugii, N., see Ishida, T. 224 (2004) Aufinger, M. Wurzer, S. Boguth, M. Rest, R. Sugiyama, N., see Takagi, S.-i. 224 (2004) Schreiter and T.F. Meister, Selective epitax- Sugiyama, N., see Usuda, K. 224 (2004) ial growth of SiGe:C for high speed HBTs 224 (2004) 18 Sugiyama, N., Y. Moriyama, S. Nakaharai, T. Schley, P., see Tillack, B. 224 (2004) 55 Tezuka, T. Mizuno and S. Takagi, Kinetics Schley, P.. see Winkler, W. 224 (2004) 297 of epitaxial growth of Si and SiGe films on Schmidt, D., see Winkler, W. 224 (2004) 297 (1 1 0) Si substrates 224 (2004) Schmidt, O.G., see Denker, U. 224 (2004) 127 Suvar, E., E. Haralson, H.H. Radamson, Y.-B Schéllhorn, C., see Jutzi, M. 224 (2004) 170 Wang, J.V. Grahn, B.G. Malm and M. Scholz, R., see Winkler, W. 224 (2004) 297 Ostling, Characterization of leakage current Schreiter, R., see Schafer, H. 224 (2004) 18 related to a selectively grown collector in Schumacher, H., P. Abele, E. S6nmez, K.-B. SiGeC heterojunction bipolar transistor Schad and A. Trasser, Low-cost circuit structure 224 (2004) solutions for micro- and millimeter-wave Suvar, E., see Hallstedt, J. 224 (2004) systems using commercially available SiGe Suvar, E., see Haralson, E. 224 (2004) technologies 224 (2004) 410 Segawa, Y., see Kutsukake, K. 224 (2004) 95 Takagi, S., see Sugiyama, N. 224 (2004) Seino, T., see Muto, D. 224 (2004) 210 Takagi, S.-i., see Usuda, K. 224 (2004) Selberherr, S., see Palankovski, V. 224 (2004) 312 Takagi, S.-i.. T. Mizuno, T. Tezuka, N. Selberherr, S., see Palankovski, V. 224 (2004) 361 Sugiyama, T. Numata, K. Usuda, Y. Mor- Selberherr, S., see Wagner, S. 224 (2004) 365 iyama, S. Nakaharai, J. Koga, A. Tanabe Senapati, B., see Tillack, B. 224 (2004) 55 and T. Maeda, Fabrication and device char- Senthil, K.. H. Nakazawa and M. Suemitsu, acteristics of — strained-Si-on-insulator Adsorption kinetics of dimethylsilane at (strained-SOLl) CMOS 224 (2004) S$i(0 0 1) 224 (2004) 183 Takahashi, K., see Fujiu, M. 224 (2004) Shen, B., see Yang, H.G. 224 (2004) 394 Takehiro, S., see Lee, D. 224 (2004) Shi, Y., see Yang, H.G. 224 (2004) 394 Takehiro, S., see Noh, J. 224 (2004) Shi, Z., D. Onsongo and S.K. Banerjee, Mobility Takeuchi, H., P. Ranade and T.-J. King, Low- and performance enhancement in compres- temperature dopant activation technology sively strained SiGe channel PMOSFETs 224 (2004) 248 using elevated Ge-S/D structure 224 (2004) 73 Shim, J.C., H. Oh, H. Choi, T. Sakaguchi, H. Takeuchi, S., see Ariyoshi, S. 224 (2004) 117 Kurino and M. Koyanagi, SiGe elevated Tanabe, A., see Takagi, S.-i. 224 (2004) 241 source/drain structure and nickel silicide Taoka, N., see Egawa, T. 224 (2004) 104 contact layer for sub 0.1 jum MOSFET Taoka, N., see Yamamoto, T. 224 (2004) 108 fabrication 224 (2004) Telliez, I., see Sadowy, J. 224 (2004) 419 Shimamune, Y., M. Sakuraba, J. Murota and B. Tezuka, T., see Sugiyama, N. 224 (2004) 188 Tillack, Formation of heavily P-doped Si Tezuka, T., see Takagi, S.-i. 224 (2004) 241 epitaxial film on Si(100) by multiple Tezuka, T., see Usuda, K. 224 (2004) 113 atomic-layer doping technique 224 (2004) 202 Tillack, B., see Kriiger, D. 224 (2004) 51 Shiraki, Y., see Sawano, K. 224 (2004) 99 Tillack, B., see Shimamune, Y. 224 (2004) 202 Shu, D.Y., see Wang, C.S. 224 (2004) 222 Tillack, B., see Winkler, W. 224 (2004) 297 Sigg, H., see Denker, U. 224 (2004) 127 Tillack, B., Y. Yamamoto, D. Knoll, B. Heine- Singaporewala, F., see Bera, L.K. 224 (2004) 278 mann, P. Schley, B. Senapati and D. Kriiger, Sluiter, M.H.F., see Yonenaga, I. 224 (2004) 193 High performance SiGe:C HBTs using Smirnov, S., see Palankovski, V. 224 (2004) 361 atomic layer base doping 224 (2004) S6nmez, E., see Schumacher, H. 224 (2004) 410 Todd, M.A., and K.D. Weeks, Low tempera- Stangl, J., see Kirfel, O. 224 (2004) 139 ture, high growth rate epitaxial silicon and Stengl, R., see Schifer, H. 224 (2004) 18 silicon germanium alloy films 224 (2004) 41 Stewart, E.J., and J.C. Sturm, Segregation of Toumazou, C., see Michelakis, K. 224 (2004) 386 boron to polycrystalline and single-crystal Tournier, E., see Sadowy, J. 224 (2004) 419 Si, _,-,Ge,C, and Si, _,C, layers 224 (2004) 87 Trasser, A., see Schumacher, H. 224 (2004) 410 Stricker, A.D., J.B. Johnson, G. Freeman and J.- Tsai, M.-J., see Lee, S.W. 224 (2004) 152 S. Rieh, Design and optimization of a 200 Tsai, M.-J., see Pei, Z. 224 (2004) 165 GHz SiGe HBT collector profile by TCAD 224 (2004) 324 Tsai, M.-J., see Wang, C.S. 224 (2004) 222 Author Index Tsuchiya, T., see Lee, D. 224 (2004) 254 W. Hoppner, D. Knoll, D. Kriiger, B. Kuck, Tsujino, S.. S. Mentese, L. Diehl, E. Miiller, R. Kurps, M. Marschmeyer, H. Richter, P B. Haas, D. Bachle, S. Stutz, D. Griitzma- Schley, D. Schmidt, R. Scholz, B. Tillack. cher, Y. Campidelli, O. Kermarrec and D. Wolansky, H.-E. Wulf, Y. Yamamoto, P. D. Bensahel, Resonant tunneling in Zaumseil, Circuit applications of high-per- Si-SiGe superlattices on relaxed buffer sub- formance SiGe:C HBTs integrated in BiC- Strates 224 (2004) 377 MOS technology 224 (2004) 297 Tsunoda, I., A. Kenjo, T. Sadoh and M. Miyao, Wohl, G., see Jutzi, M. 224 (2004) 170 Enhanced crystal nucleation in a-SiGe/SiO, Wolansky, D., see Winkler, W. 224 (2004) 297 by ion-irradiation assisted annealing 224 (2004) 231 Wulf, H.-E., see Winkler, W. 224 (2004) 297 Turchetti, C., see Crippa, P. 224 (2004) 429 Wurzer, M., see Schiifer, H. 224 (2004) 18 Turchetti, C., see Crippa, P. 224 (2004) 434 Yam, V., see Nguyen, L.H. 224 (2004) 134 Ujihara, T., see Kutsukake, K. 224 (2004) 95 Yam, V., V. Le Thanh, D. Débarre, Y. Zheng and Usami, N., see Kutsukake, K. 224 (2004) 95 D. Bouchier, Kinetics of Si capping process Usuda, K., see Takagi, S.-i. 224 (2004) 241 of Ge/Si(0 0 1) quantum dots 224 (2004) 143 Usuda, K., T. Mizuno, T. Tezuka, N. Sugiyama, Yamamoto, T., A. Sakai, T. Egawa, N. Taoka, Y. Moriyama, S. Nakaharai and S.-i. O. Nakatsuka, S. Zaima and Y. Yasuda, Takagi, Strain relaxation of strained-Si Dislocation structures and strain-relaxation layers on SiGe-on-insulator (SGOI) struc- in SiGe buffer layers on Si (0.0 1) substrates tures after mesa isolation 224 (2004) 113 with an ultra-thin Ge interlayer 224 (2004) 108 Yamamoto, T., see Egawa, T. 224 (2004) 104 Van Nieuwenhuysen, K., see Meunier-Beillard, Yamamoto, Y., see Kriiger, D. 224 (2004) 51 P. 224 (2004) 31 Yamamoto, Y., see Tillack, B. 224 (2004) 55 Vandervorst, W., see Delhougne, R. 224 (2004) 91 Yamamoto, Y., see Winkler, W. 224 (2004) 297 Vandervorst, W., see Meunier-Beillard, P. 224 (2004) 31 Yang, H.G., Y. Shi, L. Pu, R. Zhang, B. Shen, P. Velazquez-Perez, J.E., see Gaspari, V. 224 (2004) 390 Han, S.L. Gu and Y.D. Zheng, Nonvolatile Verheyen, P., see Loo, R. 224 (2004) 63 memory based on Ge/Si hetero-nanocrys- Verheyen, P., see Loo, R. 224 (2004) 292 tals 224 (2004) 394 Vilches, A., see Michelakis, K. 224 (20043)8 6 Yang, T.-Y., see Hua, W.-C. 224 (2004) 425 Yap, J., see Bera, L.K. 224 (2004) 278 Wagner, S., V. Palankovski, G. Rohrer, T. Yasuda, Y., see Ariyoshi, S. 224 (2004) 117 Grasser and S. Selberherr, Direct extraction Yasuda, Y., see Egawa, T. 224 (2004) 104 feature for scattering parameters of SiGe- Yasuda, Y., see Yamamoto, T. 224 (2004) 108 HBTs 224 (2004) 365 Yasuda, Y., see Zaima, S. 224 (2004) 215 Wang, C.S., D.Y. Shu, W.Y. Hsieh and M.-J. Yonenaga, I., M. Sakurai, M.H.F. Sluiter and Y. Tsai, Reactive ion etching of Si, _G e, alloy Kawazoe, Local atomic structure in Czo- with hydrogen bromide 224 (2004) 222 chralski-grown Ge, _S i, bulk alloys 224 (2004) 193 Wang, Y.-B., see Hallstedt, J. 224 (2004) 46 Wang, Y.-B., see Haralson, E. 224 (2004) 330 Zaima, S., O. Nakatsuka, A. Sakai, J. Murota Wang, Y.-B., see Suvar, E. 224 (2004) 336 and Y. Yasuda, Interfacial reaction and Washio, K., High-speed SiGe HBTs and their electrical properties in Ni/Si and Ni/ applications 224 (2004) 306 SiGe(C) contacts 224 (2004) 215 Watanabe, G., J. Ortiz and R. Holbrook, High Zaima, S., see Ariyoshi, S. 224 (2004) 117 performance rf front end circuits using Zaima, S., see Egawa, T. 224 (2004) 104 SiGe:C BiCMOS + copper technologies 224 (2004) 405 Zaima, S., see Yamamoto, T. 224 (2004) 108 Weber, O., see Ducroquet, F. 224 (2004) 274 Zaumseil, P., see Winkler, W. 224 (2004) 297 Weeks, K.D., see Todd, M.A. 224 (2004) 41 Zerounian, N., see Aniel, F. 224 (2004) 370 Wen, J., see Brabant, P. 224 (2004) 347 Zhang, B., see Kutsukake, K. 224 (2004) 95 Whall, T.E., see Myronov, M. 224 (2004) 265 Zhang, J., see Michelakis, K. 224 (2004) 386 Wiltsche, S., see Buschbeck, H.M. 224 (2004) 36 Zhang, R., see Yang, H.G. 224 (2004) 394 Winkler, W., J. Borngriber, B. Heinemann, H. Zheng, Y., see Calmes, C. 224 (2004) 122 Riicker, R. Barth, J. Bauer, D. Bolze, J. Zheng, Y., see Yam, V. 224 (2004) 143 Drews, K.-E. Ehwald, T. Grabolla, U. Haak, Zheng, Y.D., see Yang, H.G. 224 (2004) 394 applied surface science ELSEVIER Applied Surface Science 224 (2004) VIII-XXV www.elsevier.com locate apsusc Subject Index Alloys Argon Low temperature, high growth rate epitaxial Ar plasma irradiation effects in atomically silicon and silicon germanium alloy films, controlled Si epitaxial growth, D. Muto, M.A. Todd and K.D. Weeks 224 (2004) 41 M. Sakuraba, T. Seino and J. Murota 224 (2004) 210 Growth of high quality epitaxial Si, _, ,Ge,C, layers by using chemical vapor deposition, J. Hallstedt, E. Suvar, P.O.A. Persson, L. Hultman, Y.-B. Wang and H.H. Radamson 224 (2004) 46 Arsenic Reactive ion etching of Si, ,Ge, alloy with hydrogen bromide, C.S. Wang, D.Y. Shu, On the mechanism of ion-implanted As diffu- W.Y. Hsieh and M.-J. Tsai 224 (2004) sion in relaxed SiGe, S. Eguchi, J.J. Lee, S.J. Rhee, D.L. Kwong, M.L. Lee, E.A. Fitzgerald, I. Aberg and J.L. Hoyt 224 (2004) 59 Ammonia Characterization of As ion-implanted layers in strained-Si/SiGe/Si hetero-structures, T. Epitaxial growth of N delta doped Si films on Ishida, S. Irieda, T. Inada and N. Sugii 224 (2004) 82 Si(1 0 0) by alternately supplied NH, and SiH,, Y. Jeong, M. Sakuraba and J. Murota 224 (2004) Atomic force microscopy Annealing Production-ready dry cleaning and deposition Low-temperature dopant activation technology processes for low-temperature Si and SiGe using elevated Ge-S/D structure, H. Takeu- epitaxy, H.M. Buschbeck, A. Erhart, Y. chi, P. Ranade and T.-J. King 224 (2004) Goeggel, C. Rosenblad, S. Wiltsche, J. Characterization of As ion-implanted Ramm, A. Dommann and M. Kummer 224 (2004) 36 layers in strained-Si/SiGe/Si hetero-struc- Low temperature, high growth rate epitaxial tures, T. Ishida, S. Irieda, T. Inada and N. silicon and silicon germanium alloy films, Sugii 224 (2004) M.A. Todd and K.D. Weeks 224 (2004) 41 Fabrication of SiGe-on-insulator by rapid ther- Formation of thin SiGe virtual substrates by ion mal annealing of Ge on Si-on-insulator implantation into Si substrates, K. Sawano, substrate, K. Kutsukake, N. Usami, K. Fuji- S. Koh, Y. Hirose, T. Hattori, K. Nakagawa wara, T. Ujihara, G. Sazaki, K. Nakajima, and Y. Shiraki 224 (2004) 99 B. Zhang and Y. Segawa 224 (2004) Strain-relaxation mechanisms of SiGe layers Influence of thermal annealing on composi- formed by two-step growth on Si(0 0 1) tional mixing and crystallinity of highly substrates, T. Egawa, A. Sakai, T. Yama- selective grown Si dots with Ge core, Y. moto, N. Taoka, O. Nakatsuka, S. Zaima Darma, H. Murakami and S. Miyazaki 224 (2004) and Y. Yasuda 224 (2004) 104 Enhanced crystal nucleation in a-SiGe/SiO, by Intermixing in Ge hut cluster islands, U. Den- ion-irradiation assisted annealing, I. Tsu- ker, H. Sigg and O.G. Schmidt 224 (2004) 127 noda, A. Kenjo, T. Sadoh and M. Miyao 224 (2004) 2 Selective epitaxial growth of Ge quantum dots SiGe elevated source/drain structure and nickel on patterned SiO,/Si(0 0 1) surfaces, L.H. silicide contact layer for sub 0.1 pm Nguyen, V. LeThanh, D. Débarre, V. Yam, MOSFET fabrication, J.C. Shim, H. Oh, M. Halbwax, M. El Kurdi, D. Bouchier, P. H. Choi, T. Sakaguchi, H. Kurino and M. Rosner, M. Becker, M. Benamara and H.P. Koyanagi 224 (2004) 260 Strunk 224 (2004) 134 doi: 10.1016/S0169-4332(04)00075-3 Subject Index Kinetics of Si capping process of Ge/Si(0 0 1) Despotopoulos, V. Gaspari, A. Vilches, K quantum dots, V. Yam, V. Le Thanh, D. Fobelets, C. Papavassiliou, C. Toumazou Deébarre, Y. Zheng and D. Bouchier 224 (2004) 143 and J. Zhang 224 (2004) 386 Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treat- ments, S.W. Lee, LJ. Chen, PS. Chen, Boron M.-J. Tsai, C.W. Liu, W.Y. Chen and T.M. Hsu 224 (2004) 152 In situ B doping of SiGe(C) using BCI, in Room temperature 1.3 and 1.5 jum electrolu- ultraclean hot-wall LPCVD, Y. Kunii, Y. minescence from Si/Ge quantum dots Inokuchi, A. Moriya, H. Kurokawa and J. (QDs)/Si multi-layers, Z. Pei, P.S. Chen, Murota 224 (2004) 68 S.W. Lee, L.S. Lai, S.C. Lu, M.-J. Tsai, Relationship between impurity (B or P) and W.H. Chang, W.Y. Chen, A.T. Chou and carrier concentration in SiGe(C) epitaxial T.M. Hsu 224 (2004) 165 film produced by thermal treatment, J. Noh, Kinetics of epitaxial growth of Si and SiGe S. Takehiro, M. Sakuraba and J. Murota 224 (2004) 77 films on (1 1 0) Si substrates, N. Sugiyama, Y. Moriyama, S. Nakaharai, T. Tezuka, T. Mizuno and S. Takagi 224 (2004) 188 Carbides Auger electron spectroscopy Roughening mechanisms of tensily strained Si, _,_,Ge,C, films grown by UHV-CVD: evidence of a carbon surface diffusion Characterization of Ge gradients in SiGe HBTs related mechanism, C. Calmes, D. Bouch- by AES depth profile simulation, D. Krii- ier, C. Clere and Y. Zheng 224 (2004) 122 ger, A. Penkov, Y. Yamamoto, A. Gor- yachko and B. Tillack 224 (2004) 51 Electrical properties of Si, _,C,/Si/SiO, inter- face for sub 50 nm strained-channel nMOS- A new technique to fabricate ultra-shallow- FETs, F. Ducroquet, T. Ernst, O. Weber, junctions, combining in situ vapour HCl J.-M. Hartmann, V. Loup, P. Besson, L. etching and in situ doped epitaxial SiGe Brévard, J.L. Di Maria and S. Deleonibus 224 (2004) 274 re-growth, R. Loo, M. Caymax, P. Meunier- Minority carrier lifetime and diffusion length in Beillard, I. Peytier, F. Holsteyns, S. Kubi- Si,_,_,Ge,C, and Si, ,C, heterolayers, cek, P. Verheyen, R. Lindsay and O. Richard 224 (2004) 63 S.K. Samanta, G.K. Dalapati, S$. Chatterjee and C.K. Maiti 224 (2004) 283 Electrical properties of ZrO, films on Boron Si, _,_,Ge,C, epitaxial layers, S. Chatter- jee, G.K. Dalapati, $.K. Samanta and C.K. Fabrication of 0.12 jm pMOSFETs on high Ge Maiti 224 (2004) 288 Characterization of leakage current related to a fraction Si/Si,;_,Ge,/Si(1 0 0) heterostruc- selectively grown collector in SiGeC het- ture with ultrashallow source/drain formed using B-doped SiGe CVD, D. Lee, S. Take- erojunction bipolar transistor structure, E. Suvar, E. Haralson, H.H. Radamson, Y.-B. hiro, M. Sakuraba, J. Murota and T. Tsu- Wang, J.V. Grahn, B.G. Malm and M. chiya 224 (2004) 254 Ostling 224 (2004) 336 High performance rf front end circuits using Bismuth SiGe:C BiCMOS + copper technologies, G. Watanabe, J. Ortiz and R. Holbrook 224 (2004) 405 High performance rf front end circuits using SiGe:C BiCMOS + copper technologies, Carbon G. Watanabe, J. Ortiz and R. Holbrook 224 (2004) 405 Selective epitaxial growth of SiGe:C for high Bond structures speed HBTs, H. Schafer, J. Bock, R. Stengl, H. Knapp, K. Aufinger, M. Wurzer, S. Resonant tunneling in Si-SiGe superlattices on Boguth, M. Rest, R. Schreiter and T.F. relaxed buffer substrates, S. Tsujino, S. Meister 224 (2004) 18 Mentese, L. Diehl, E. Miiller, B. Haas, D. > aS carrier gas: an alternative to H, for Bichle, S. Stutz, D. Griitzmacher, Y. Cam- enhanced epitaxy of Si, SiGe and SiGe:C, pidelli, O. Kermarrec and D. Bensahel 224 (2004) 377 P. Meunier-Beillard, M. Caymax, K. Van SiGe virtual substrate HMOS transistor for Nieuwenhuysen, G. Doumen, B. Brijs, M. analogue applications, K. Michelakis, S. Hopstaken, L. Geenen and W. Vandervorst 224 (2004) 31 X Subject Index Growth of high quality epitaxial Si, , ,Ge,C Growth of high quality epitaxial Si, _,_ ,Ge,C, layers by using chemical vapor deposition, layers by using chemical vapor deposition, J. Hallstedt, E. Suvar, P.O.A. Persson, L. J. Hallstedt, E. Suvar, P.O.A. Persson, L. Hultman, Y.-B. Wang and H.H. Radamson 224 (2004) 46 Hultman, Y.-B. Wang and H.H. Radamson 224 (2004) In situ B doping of SiGe(C) using BCI, in Characterization of Ge gradients in SiGe HBTs ultraclean hot-wall LPCVD, Y. Kunii, Y. by AES depth profile simulation, D. Krii- Inokuchi, A. Moriya, H. Kurokawa and J. ger, A. Penkov, Y. Yamamoto, A. Gor- Murota 224 (2004) 68 yachko and B. Tillack 224 (2004) Development of a new type of SiGe thin strain High performance SiGe:C HBTs using atomic relaxed buffer based on the incorporation of layer base doping, B. Tillack, Y. Yama- a carbon-containing layer, R. Delhougne, P. moto, D. Knoll, B. Heinemann, P. Schley, Meunier-Beillard, M. Caymax, R. Loo and B. Senapati and D. Kriiger 224 (2004) W. Vandervorst 224 (2004) 91 A new technique to fabricate ultra-shallow-junc- Effect of carbon on the thermal stability of a Si tions, combining in situ vapour HCI etching atomic layer on Ge(l 0 0), M. Fujiu, K. and in situ doped epitaxial SiGe re-growth, Takahashi, M. Sakuraba and J. Murota 224 (2004) 206 R. Loo, M. Caymax, P. Meunier-Beillard, I. Interfacial reaction and electrical properties in Peytier, F. Holsteyns, S. Kubicek, P. Ver- Ni/Si and Ni/SiGe(C) contacts, S. Zaima, heyen, R. Lindsay and O. Richard 224 (2004) O. Nakatsuka, A. Sakai, J. Murota and Y. In situ B doping of SiGe(C) using BCI, in Yasuda 224 (20042)1 5 ultraclean hot-wall LPCVD, Y. Kunii, Y. Circuit applications of high-performance Inokuchi, A. Moriya, H. Kurokawa and J. SiGe:C HBTs integrated in BiCMOS tech- Murota 224 (2004) nology, W. Winkler, J. Borngriiber, B. Hei- Roughening mechanisms of tensily strained nemann, H. Riicker, R. Barth, J. Bauer, D. Si,_, _,Ge,C, films grown by UHV-CVD: Bolze, J. Drews, K.-E. Ehwald, T. Grabolla, evidence of a carbon surface diffusion U. Haak, W. Hoppner, D. Knoll, D. Kriiger, related mechanism, C. Calmes, D. Bouch- B. Kuck, R. Kurps, M. Marschmeyer, H. ier, C. Clere and Y. Zheng 224 (2004) 122 Richter, P. Schley, D. Schmidt, R. Scholz, Optical properties of stacked Ge/Si quantum B. Tillack, D. Wolansky, H.-E. Wulf, Y. dots with different spacer thickness grown Yamamoto and P. Zaumseil 224 (2004) 297 by chemical vapor deposition, W.-Y. Chen, The effect of C on emitter—base design for a W.-H. Chang, A.-T. Chou, T.-M. Hsu, P.-S. single-polysilicon SiGe:C HBT with an 1IDP Chen, Z. Pei and L.-S. Lai 224 (2004) 148 emitter, E. Haralson, E. Suvar, G. Malm, H. Influence of thermal annealing on composi- Radamson, Y.-B. Wang and M. Ostling 224 (2004) 330 tional mixing and crystallinity of highly High performance rf front end circuits using selective grown Si dots with Ge core, SiGe:C BiCMOS + copper technologies, Y. Darma, H. Murakami and S. Miyazaki 224 (2004) 156 G. Watanabe, J. Ortiz and R. Holbrook 224 (2004) 405 Room temperature 1.3 and 1.5 yum electrolu- minescence from Si/Ge quantum dots (QDsy/Si multi-layers, Z. Pei, P.S. Chen, Chemical vapour deposition S.W. Lee, L.S. Lai, S.C. Lu, M.-J. Tsai, W.H. Chang, W.Y. Chen, A.T. Chou and T.M. Hsu 224 (2004) 165 Avoiding loading effects and facet growth. Key GeH, adsorption on Si(0 0 1) at RT: transfer of parameters for a successful implementation H atoms to Si sites and atomic exchange of selective epitaxial SiGe deposition for between Si and Ge, T. Murata and M. HBT-BiCMOS and high-mobility hetero- channel pMOS devices, R. Loo and M. Suemitsu 224 (2004) 179 Caymax 224 (2004) Kinetics of epitaxial growth of Si and SiGe N> as carrier gas: an alternative to H, for films on (1 1 0) Si substrates, N. Sugiyama, enhanced epitaxy of Si, SiGe and SiGe:C, Y. Moriyama, S. Nakaharai, T. Tezuka, P. Meunier-Beillard, M. Caymax, K. Van T. Mizuno and S. Takagi 224 (2004) 188 Nieuwenhuysen, G. Doumen, B. Brijs, M. Epitaxial growth of N delta doped Si films on Hopstaken, L. Geenen and W. Vandervorst 224 (2004) Si(1 0 0) by alternately supplied NH, and Production-ready dry cleaning and deposition SiH,, Y. Jeong, M. Sakuraba and J. Murota 224 (2004) 197 processes for low-temperature Si and SiGe Formation of heavily P-doped Si epitaxial film epitaxy, H.M. Buschbeck, A. Erhart, Y. on Si(1 0.0) by multiple atomic-layer dop- Goeggel, C. Rosenblad, S. Wiltsche, J. ing technique, Y. Shimamune, M. Sakuraba, Ramm, A. Dommann and M. Kummer 224 (2004) J. Murota and B. Tillack 224 (2004) 202 Low temperature, high growth rate epitaxial Effect of carbon on the thermal stability of a Si silicon and silicon germanium alloy films, atomic layer on Ge(l 0 0), M. Fujiu, M.A. Todd and K.D. Weeks 224 (2004) K. Takahashi, M. Sakuraba and J. Murota 224 (2004) 206

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