appled surface science ELSEVIER y MOCVD tuunntn elsi n Mit ind M ’ ' t il and pla r HfOW/S riyama, T., Y. Saito, K. Otobe and S. Naka Improvement of power performance lanar type AlGaAs/GaAs MESFET by substrate surface oxidation roshima, Y., see Bhunia, S uma, Y., see Kawamura, 7 yama, H., see Hashizume, 1 ikihana, M., see Nishida, K Tl. Sakurai ikihana, M., see Nishida, K Kobayashi akihana, M., see Nishida, K makura, N ZRFA RRRA A N 7 i'm I K umiya, K Kan Kan Kan Kan K K K. Miki, Si subs MOV Pt J.-K.. W.S. Kim ind H.-H. Park oshida, S.. K. Doi, K Nakamura and A Gd-OJ/GadAs syste Tachibana, Theoretical study on the imitia processes f nitridat n of silicon thin fils shida, Y., see Emoto, T 3) 17 shigoe, A., K. Moritar 1 Y. Teraoka, I nd T. Akahane, Rad time observation of init therma lependence of U hs nal on l st 7as O > U 1) Surface ym Si grown by t limethy silane M.N.K shigoe, A i W.-S shikane, T ikawa, M oto, M appled surface science El SEVIER IX-XXXI] Subject Index tfN ix 1Su bh nmetric GaAs/AIA nal and 4K. Sulaimanovy, L.S S. Kotake Gilinsky, A.l. Torop Y. Suz iki, T. M ind K.S. Zhur A/uminium oxide Iwa NSIT vf InAsf rom two-dimensional pert slands to three-dimensional dots by anneal M ESFET t S. Iwasaki and K. Yamaguchi Mechanism of H, pre-annealing on the growth f GaN on sapphire by MOVPI M. Tsuda K. Watanabe, S. Kamiyama H. Amano, I AKasaki R. Li u ‘ Bell ind F. A Ponce LO1L6/SO169 Subject Index Antimony ts of the substrate K. Nishida M. Kakihana he Si 0( nechanism of PTO Furukawa ve, K. Nishida, K. Shi anndd ( M. Kakihana :¢ iV situ oDservatio MOCVD, Y. Od MOVPE ind T. K X-ra Y. Watan Kag