STP40NF10L Ω N-channel 100V - 0.028 - 40A TO-220 Low gate charge STripFET™ Power MOSFET General features Type V R I DSS DS(on) D STP40NF10L 100V <0.033Ω 40A ■ Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization 3 2 1 Description TO-220 This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore Internal schematic diagram suitable as primary switch in advanced high- efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements. Applications ■ Switching application Order codes Part number Marking Package Packaging STP40NF10L P40NF10L TO-220 Tube January 2007 Rev 3 1/12 www.st.com 12 Contents STP40NF10L Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STP40NF10L Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage (v = 0) 100 V DS gs V Gate- source voltage ±17 V GS I Drain current (continuous) at T = 25°C 40 A D C I Drain current (continuous) at T = 100°C 25 A D C I (1) Drain current (pulsed) 160 A DM P Total dissipation at T = 25°C 150 W TOT C Derating factor 1 W/°C E (2) Single pulse avalanche energy 430 mJ AS Tstg Storage temperature – 65 to 175 °C T Max. operating junction temperature 175 j 1. Pulse width limited by safe operating area 2. Starting T= 25°C, I = 20A, V =40V j D DD Table 2. Thermal data R Thermal resistance junction-case Max 1 °C/W thj-case R Thermal resistance junction-ambient Max 62.5 °C/W thj-a Maximum lead temperature for soldering T 300 °C l purpose 3/12 Electrical characteristics STP40NF10L 2 Electrical characteristics (T =25°C unless otherwise specified) CASE T able 3. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source V I = 250 µA, V = 0 100 V (BR)DSS Breakdown voltage D GS V = Max rating 1 µA DS Zero gate voltage IDSS Drain current (VGS = 0) VDS=Max rating, 10 µA T =125°C C Gate-body leakage I V = ±17V ±100 nA GSS current (V = 0) GS DS V Gate threshold voltage V = V , I = 250µA 1 1.7 2.5 V GS(th) DS GS D R Static drain-source on VGS = 10V, ID = 20A 0.028 0.033 Ω DS(on) resistance V = 5V, I = 20A 0.030 0.036 Ω GS D T able 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit g (1) Forward transconductance V = 15V I =20A 25 S fs DS , D C Input capacitance 2300 pF iss C Output capacitance V = 25V, f = 1 MHz, 290 pF oss DS V = 0 Reverse transfer GS C 125 pF rss capacitance Q Total gate charge 46 64 nC g V = 80V, I = 40A, Q Gate-source charge DD D 12 nC gs V = 5V GS Q Gate-drain charge 22 nC gd 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5. T able 5. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit V = 50V, I = 20A t Turn-on delay time DD D 25 ns d(on) R =4.7Ω V = 4.5V G GS t Rise time 82 ns r (see Figure 13) V = 50V, I = 20A, ns t Turn-off-delay time DD D 64 d(off) R =4.7Ω, V = 4.5V ns t Fall time G GS 24 f (see Figure 13) td(off) Off-voltage Rise Time Vclamp =80V, ID = 40 A 51 ns tf Fall Time RG=4.7Ω, VGS = 4.5V 29 ns t Cross-over time (see Figure 15) 53 ns c 4/12 STP40NF10L Electrical characteristics T able 6. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit I Source-drain current 40 A SD I (1) Source-drain current (pulsed) 160 A SDM V (2) Forward on voltage I = 40A, V = 0 1.3 V SD SD GS I = 40A, V = 30V t Reverse recovery time SD DD 110 ns rr di/dt = 100A/µs, Q Reverse recovery charge 467 nC rr T = 150°C I Reverse recovery current j 8 A RRM (see Figure 15) 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 5/12 Electrical characteristics STP40NF10L 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/12 STP40NF10L Electrical characteristics Figure 7. Gate charge vs. gate-source voltage Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs. vs. temperature temperature Figure 11. Source-drain diode forward Figure 12. Normalized breakdown voltage vs. characteristics tj 7/12 Test circuit STP40NF10L 3 Test circuit Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit resistive load Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform 8/12 STP40NF10L Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : www.st.com 9/12 Package mechanical data STP40NF10L TO-220 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 10/12