PHILOSOPHICAL MAGAZINE A, 1997, VoL. 75, No. 6, 1725-1728 SUBJECT INDEX Vol. 75 Adhesion increase by interface mixing Ag and Cu, defect clusters in 1567, 1583 Al dislocations in. .. Al, nanometre voids and holes iin Al, slip energy barriers in . Al, Tl implanted in, structure of 1329, 1357 Al,O;-Nb interfaces, structure of AICoNi, phase transformations in . AICoPd, quasicrystals of AlCuFe, diffusion of Fe in. AlCuMgAg, growth kinetics of. AILi alloys, growth of. Alloys, L1, cross-slip in Alloys, shape memory, stress in AIN, domain boundaries in AIPdMn, phase transformations in . AIPdMn quasicrystals, indentations in Amorphous SiH, vapour-deposited . Au-deposited Si, surface reconstruction of B2 phase decomposition in TiAIV BaTiO;, ferroelectric domains in Bec alloy, random, correlation in Beta phase decomposition in NbAI . Binary ordered alloy, diffusion in Boron diffusion in Si, dislocations in Brittle materials, elastic response of. Brittle-ductile behaviour of materials CAIMnNi approximant, model of . Correlation in a random bec alloy . Crack tips, cleavage at : ; Crack tips, dislocation nucleation from ‘ Cracks, fatigue, simulation of . Creep in CrMo steels . CrMo steels, creep in . Crystallization of SbhGeO films . Cu and Ag, defect clusters in 1567, 1583 Cu in Fe, vacancies in. Cu3Au and Ni3Al, dislocations iin CuAIBe shape memory alloys . Cube slips in Ni;Ge Decagonal phases in AICoNi Decagonal phases in AIPdMn . Decomposition in NiZrNi . Defect clusters in Ag and Cu Defect clusters in Zn . Defects and diffusion in NiAl 169, 187 1726 Subject index Defects in Ni3Al . : Defects, nanoscale, in transparent solids. Deformation in Ti alloys Deformation in TiAl . Deformation mechanisms in MoSiy . Diamond, displacement in . Diffusion in a binary ordered alloy . Diffusion in FeNd Diffusion processes in Pd— Ta glasses : Diffusion, intracrystalline, under stress . Dislocation nucleation from crack tips . Dislocation pile-ups, moments of Dislocation structures, modelling of _. Dislocations in a Ni-based superalloys . Dislocations in Cu3Au and Ni3Al Dislocations in lattice mismatched layers Dislocations in L1, alloys . Dislocations in TiAl Displacement in diamond . Domain boundaries in AIN Elastic response of brittle materials . Emission and cleavage at crack tips. Fatigue cracks, simulation of Fcc metals, liquid—vapour interface of Fe in AlCuFc, diffusion of. Fe, Cu in, vacancies in FeCu, point defects in. Feldspar, oxygen diffusion in FeNd, diffusion in. Ferroelectric domains in BaTiO, Ferroelectrics, phase growth in. FeS, pyrites, stoichiometry of . Fractal structure in tooth enamel Frank—Kasper quasicrystal phase GaAs and Si, pore formation in : GaAs, ZnS films on, stacking faults in GaAs/InGaAs, In segregation in Glass formation of Ni. Gramboundanesm NIA). . 2. 2. 6 6 8 UHURU ee Grain boundaries in Nix(AlogTip2). 3. =. we , 1417 Grain growth, normal, theoriesof . . . . . . . . e011 Growth kinetics of AliCuMgAg. . . . . . . ee 64 Growth of AILi alloys gt ea te a ee MT ee SS Mav-Peichelecitsan FiAl. 6 « » % » «~ «© © & «© «© & © 87 HAIN/HSIC interface, defects in. ‘ P : : : : : : ' : . 239 Hydrogen precipitatesinSi . . . . . . eT Hydrogenated silicon, groowthof . . . . . . ee, 31 In segregation in InGaAs/GaAs . . . . . . . 2... 803 Interatomic force laws, modelling of . . . . . . 2... 749 Interface mixing, adhesion increase by . . . . . . . . 369 Interface’structites'or NIT: 2 ke Sati Ul BS Interfaceistnucturein THA. «©. ww lll ke Intracrystalline diffusion under stress . . . . . 2... «2221 Subject index 1727 Lattice mismatch layers, dislocations in. . . . . . . . . . . 1461 Dip aheys@iccntOI mE. ll ll Cll ti kl Ul Ll, ordered alloys, cross-slipin . . . . . . . . . 2. 2. . 823 Ll,-type Ni3 (Al,Ta), microanalysis of . . . . . . . . . 2). 153 Metals, fec, liquid-vapour interfaceof . . . . . . 2.) . 1067 Misfit accommodation in spinels . . . . . . . . . ) .)). 889, 909 MoOSi, deformation mechanisms in . ne ee ee > » “ead <a Nanometre voids and holesin Al . . . . . . 69 Nanoscale defects in transparent solids. . . . . . 2. . 2) 2). 1383 Nb-Al,0; interfaces, structureof . . . . . . . . 3 .) .)) .1329, 1357 INGA Gecompomtionim . 2. 2. kk lk lll lll el lll a Ne dimusiomormtoNiZr. . . . «§ «© « « «© «© « « « « (il Ni, glass formation of... ee er er ee Pe Le Ni3(Al,Ta), L1 -type, microanalysis of eS ee eo wed (fe: vad 2B ly be Ni3(AlogTio.2), grain boundariesin. . . . . . . . . . ~~ . 1403, 1417 Ni3Al and Cu3Au, dislocations in Ni3zAl, defects in . Ni;Al, shear failure in. Ni3Ge, cube slips in x % NiAl, defects and diffusion in . NiAl, grain boundaries in . NiTi, interface structures of NiZr, diffusion of Ni into . NiZrNi, decomposition in... Normal grain growth, theories of Orthorhombic CAIMnNi approximant . Oxygen vacancies in Si-SiO, Pd-Ta glasses, diffusion processes in Peierls stress, theory of ; Phase growth in ferroelectrics . Phase stability in SrO-SrTiO; . Point defects in FeCu . Polygonization in single glide Polytypism in III-V semiconductors Polytypoid formation in YBaCuO . Pyrites, FeS, stoichiometry of . Quasicrystalline AIPdMn, indentations in Quasicrystalline Frank—Kasper phase Quasicrystals of AlCoPd ; Quasicrystals, stress in Sanidine feldspar, oxygen diffusion in Sapphire, TiO, in. SbGeO films, crystallization of . Shape memory alloys of CuAlBe Shape memory alloys, stress in . Shear failure in Ni;Al. Si and GaAs, pore formation in : Si, Au-deposited, surface reconstruction of : Si, boron diffusion in, dislocations in Si, hydrogen precipitates in Si-SiO,, oxygen vacancies in SiGe, twinned wedges in 1728 Subject index SiH, amorphous vapour-deposited . Silicon, hydrogenated, growth of Single glide, polygonization in . Site occupancy in TiNi —_ . Sn implanted in Ti Spinels, misfit accommodation iin SrO-SrTiO3, phase stability in . Stress factor in dislocation pile-ups . Stress in icosahedral quasicrystals Stress, Peierls, theory of : Superalloys, Ni-based, dislocations in Superconducting YBaCuO, properties of Ti alloys, deformation in Ti, Sn implanted in Ti, tilt grain boundaries in. TiAl, deformation in . TiAl, dislocations in . ; TiAl, Hall—Petch effects in. TiAl, interfacial structure in TiAl, twin interfaces in : TiAIV, phase decomposition in. Tilt grain boundaries in hcp Ti. TiNi compounds, site occupancy in. 1185 TiO, in sapphire ; : 221 Tl implanted in Al, structure of 1533 Tooth enamel, fractal structure in 1023 Twin interfaces in TiAl 975 Twinned wedges in SiGe 925 Twins in Zn, defects in 1075 YBaCuO, mechanical properties of . 505 YBaCuO, polytypoid formation in . 285 Zn, defects in . 1153, 1075 ZnS on GaAs, stacking faults ii n 1209 PHILOSOPHICAL MAGAZINE A, 1997, VoL. 75, No. 6, 1729-1737 INDEX OF AUTHORS (WITH TITLES OF PAPERS) Vol. 75 Abe, E., Kajiwara, S., Kumagai, T., and Nakamura, M.: High-resolution electron microscopy of twin interfaces in massively transformed y-TiAl Abromeit, C., see Miiller, S. Ackland, G. J., Bacon, D. J., Calder, A. F., and Harry, T.: Computer simulation of point defect properties in dilute Fe-Cu alloy using a many-body interatomic OMNIA. G6 wes Afonso, C. N., see Morilla, M. C. Al-Hazmi, F., see Mergia, K. Alcobe, X., see Jurado, M. Amazit, Y., Perrin, B., Fischer, M., Itie, J. P., and Polian, A.: X-ray diffraction measurements in icosahedral Al-Pd—Mn up to 40 GPa An, G. Y., see Liu, H. B. Andersen, H. H., see Sorensen, A. H. Anderson, P. M., see Shastry, V. Angelo, J. E., see Medlin, D. L. Argon, A. S., see Xu, G. Arnold, M., Wang, Z. L., Tong, W., Wagner, B. K., Schén, S., and Summers, C. J.: Formation of stacking faults in ZnS thin films epitaxially grown on GaAs(001) Asaro, R. J., see Dao, M. Asaro, R. J., see Kad, B. K. Bacon, D. J., see Ackland, G. J. Bacon, D. J., see Gao, F. Bacon, D. J., see Mikhin, A. G. Bai, Y., see Hong, Y. Barts, D. B., and Carlson, A. E.: Simulation and theory of polygonization in single glide . es 3G Bassas, J., see Jurado, M. Baumgarte, A., Schreuer, J., Estermann, M. A., and Steurer, W.: X-ray diffraction study of decaprismatic Al-Co-—Ni crystals as a function of composition and temperature . .. Behar, M., see Pérez, R. A. Belova, I. V., and Murch, G. E.: The Manning relations for atomic diffusion in a DAARWONUCIORRANGU: 8 de coe ee een emcee ee Benson, W. E., and Howe, J. M.: An in-situ high-resolution transmission electron microscopy study of the growth and dissolution of 0,;;;, precipitate plates in an Al-Cu-Mg-Ag alloy . Bergman, C., see Joulaud, J.-L. Bergstrom, L., see Price, P. B. Bernardini, J., see Joulaud, J.-L. Bottiger, J., see Karpe, N. Bourdelle, K. K., see Sorensen, A. H. Boureau, G., see Carniato, S. - Braisaz, T., Ruterana, P., Nouet, G., and Pond, R. C.: Investigation of {1012} twins in Zn using high-resolution electron microscopy: interfacial defects and interac- RSs. 5) hPa Ae ke Ania hee eal See eat tent Meee Bullough, T. J.: Sputtering and the formation of nanometre voids and holes in aluminium in a scanning transmission electron microscope 1730 Index of authors Calder, A. F., see Ackland, G. J. Calvayrac, Y., see Joulaud, J.-L. Carius, R., see Luysberg, M. Carlson, A. E., see Barts, D. B. Carlsson, A. E., see Thomson, R. Carniato, S., Boureau, G., and Harding, J. H.: Modelling oxygen vacancies at the Si(100)-SiO, interface : ; Carter, C. B., see Medlin, D. L. Castan, T., see Jurado, M. Chandrasekaran, M., Ghosh, G., Schryvers, D., De Graef, M., Delaey, L., and Van Tendeloo, G.: Decomposition of a metastable bec phase in rapidly solidified Ni-9 at.% Zr and Ni-8 at.% Zr—1 at.% X alloys . Chen, K. Y., see Liu, H. B. Chen, Z. J., see Mitra, A. Cherns, D., Kaneko, K., Movsepian, A., and Lang, A.: Measurement of the lattice displacement across {100} platelets in diamond by large-angle convergent-beam electron diffraction eh Chung, S. J., see Park, B. M. Cocks, A. C. F., see Gill, S. P. A. Colin, J., Junqua, N., and Grilhé, J.: Adhesion increase by interface mixing Comstock Jr, R. J., see Somerday, M Conyers, J. S., see Karpe, N. Corbett, J. M., see McCaffrey, J. P. Coujou, A., see Priester, L. Cowley, R. A., see Jain, S. C. Cui, S. F., lida, S., Luo, G. M., Mai, Z. H., and Kawata, H.: Statice e Waller factor analysis of hydrogen precipitates in silicon Dahmen, U., see Xiao, S. Q. Dao, M., Kad, B. K., and Asaro, R. J.: Mechanism ofi ntense shear stress failure in NizAl single crystals. . De Diego, N., see Mikhin, A. a. De Graef, M., see Chandrasekaran, M. Delaey, L., see Chandrasekaran, M. Desgardin, G., see Tancret, F. Deus, C., Wolf, B., and Paufler, P.: On the orientation dependence of crack-like failure formation near indentations on an icosahedral Al-Pd—Mn quasicrystal Devincre, B., Veyssiére, P., Kubin, L. P., and Saada, G.: A simulation ofd islocation dynamics and of the flow stress anomaly in L1, alloys. ‘ Dilger, C., Mikulla, R., Roth, J., and Trebin, H.-R.: Simulation of shear stress ii n icosahedral quasicrystals . Dimiduk, D. M., see Simmons, J. P. Doole, R. C., see Morilla, M. C. Dorfman, S., see Gordon, A. Dubois, J.-M., see Joulaud, J.-L. Dudley, M., see Park, B. M. Dunne, F. P. E., Nanneh, M. M., and Zhou, M.: Anisothermal large deformation constitutive equations and their application to modelling titanium alloys in forging a Me aD Dyment, F., see Perez, R. A. Ellmer, K., and Hépfner, C.: On the stoichiometry of the semiconductor pyrite Emori, H., see Takasugi, T. Emori, H., Takasugi, T., and Hiraga, K.: High-resolution electron microscopy of grain boundaries in aires — Id. istal Small-o at tilt bound- aries : Index of authors Erb, U., see Zugic, R. Estermann, M. A., see Baumgarte, A. Evans, D. J., Scheltens, F. J., Woodhouse, J. B., and Fraser, H. L.: Deformation mechanisms in MoSiz at temperatures above the brittle-to-ductile transition temperature. I. Polycrystalline MoSi, . Evans, D. J., Scheltens, F. J., Woodhouse, J. B.. and Fraser, H. L:: Deformation mechanisms in MoSi, at temperatures above the brittle-to-ductile transition temperature. II. Single crystal MoSi, Fang, B., see Hong, Y. Farkas, D., see Mishin, Y. Finger, F., see Luysberg, M. Fischer, F. D., see Schlogl, S. M. Fischer, M., see Amazit, Y. Fonda, R. W., Yan, M., and Luzzi, D. E.: A study of grain-boundary structure in non-stoichiometric NiAl by atomistic simulation and electron microscopy Fraser, H. L., see Evans, D. J. Freer, R., Wright, K, Kroil, H., and Géttlicher, J.: Oxygen diffusion in sanidine feldspar and a critical appraisal of oxygen isotope-mass-effect measurements in non-cubic materials Fuks, D., see Gordon, A. Fukushima, H., Jenkins, M. L., and Kirk, M. A.: On the determination of the nature of defect clusters produced by displacement cascades. Part I. A critique of the two-and-a-half-dimensional technique as applied to small clusters in silver and copper bf Bo Lk ae toe bel ee, Lee Fukushima, H., Jenkins, M. "a and Kirk, M. A.: On the determination of the nature of defect clusters produced by displacement cascades. Part II. nn of stereo imaging techniques to heavy-ion damage in copper. Gao, F., and Bacon, D. J.: Defect production by near-surface displacement cascades inNizAl .. Gao, H., see Miillner, Pp. Garcia G., R., see Reyes-Gasga, J. Gas, P., see Joulaud, J.-L. Ghosh, G., see Chandrasekaran, M. Gill, S. P. A., and Cocks, A. C. F.: An investigation of mean-field theories for normal grain growth. ae ree ee ee ey ee ae Gong, Y. D., see Liu, H. B. Gordon, A., Dorfman, S., and Fuks, D.: Non-equilibrium diagrams of phase growth for smart materials , a drs G6ttlicher, J., see Freer, R. Gratias, D., see Joulaud, J.-L. Greer, A. L., see Karpe, N. Grilhé, J., see Colin, J. Grimes, R. W., see McCoy, M. A. Gu, Z., see Hong, Y. Gutekunst, G., Mayer, J., and Riihle, M.: Atomic structure of epitaxial Nb-Al,O; interfaces. I. Coherent regions a ae ae ae ne EO ee a Gutekunst, G., Mayer, J., Vitek, V., and Riihle, M.: Atomic structure of epitaxial Nb-AlL,O; interfaces. I]. Misfit dislocations. ; Hapke, P., see Luysberg, M. Harding, J. H., see Carniato, S. Harker, A. H., see Jain, S. C. Harry, T., see Ackland, G. J. Henley, C. L., see Roth, J. Hesse, D., see Sieber, H. Heuer, A. H., see Xiao, S. Q. 1732 Index of authors Hiraga, K., see Emori, H. Hiraga, K., see Takasugi, T. Hiraga, K., see Yubuta, K. Hong, Y., Gu, Z., Fang, B., and Bai, Y.: Collective evolution characteristics and computer simulation of short fatigue cracks H6pfner, C., see Ellmer, K. Horita, Z., McCartney, M. R., and Kuninaka, H.: Channelling-enhanced microana- lysis using [111] and [001] zone-axis beam incidence for L1-type Ni3(Al, Ta). Hovsepian, A., see Cherns, D. Howe, J. M., see Benson, W. E. Hu, Z. Q., see Liu, H. B. Hu Zhuang Qi, see Xu Dong Sheng lida, S., see Cui, S. F. Inui, H., Matsumuro, M., Wu, D.-H., and Yamaguchi, M.: Temperature dependence of yield stress, deformation mode and deformation structure in single crystals of TiAl (Ti-56 at.% Al) Inui, H., see Siegl, R. Itie, J. P., see Amazit, Y. Jain, 8. C., Harker, A. H., and Cowley, R. A.: Misfit strain and misfit dislocations in lattice mismatched epitaxial layers and other systems . Jenkins, M. L., see Fukushima, H. Jenkins, M. L., see Miiller, S. Jiles, D. C., see Mitra, A. Johansen, A., see Sorensen, A. H. Johnson, E., see Sorensen, A. H. Joulaud, J.-L., Bernardini, J., Gas, P., Bergman, C., Dubois, J.-M., Calvayrac, Y., and Gratias, D.: Volume and grain-boundary self-diffusion of Fe in Al-Cu—Fe icosahedral quasicrystals . ; Jumonji, K., see Ueta, S. Junqua, N., see Colin, J. Jurado, M., Castan, T., Mafiosa, L., Planes, A., Bassas, J., Alcobé, X., and Morin, M.: Study of the order—disorder phase transitions in Cu-Al-Be shape memory alloys . Kad, B. K., and Asaro, R. J.: Apparent Hall—Petch effects in polycrystalline lamellar PR en ee cn DN Ee Pe aceL om PW eae) tact vee F pete ae Kad, B. K., see Dao, M. Kajiwara, S., see Abe, E. Kamino, T., Yaguchi, T., Tomita, M., and Saka, H.: Jn-situ high-resolution electron microscopy study on a surface reconstruction of Au-deposited Si at very high temperatures. .. Kanazawa, K., see Ueta, S. Kaneko, K., see Cherns, D. Karpe, N., Bottiger, J., Krog, J. P., Conyers, J. S., Greer, A. L., and Somekh, R. E.: Study of the diffusion of Ni into amorphous NisoZrsq and the resulting strain formation. ‘ Kato, M., see Veta, S. Kawata, H., see Cui, S. F. Kaxiras, E., see Sun, Y. Khalfallah, O., see Priester, L. Kim, H. S., see Park, B. M. Kirk, M. A., see Fukushima, H. Kirkaldy, J. S., see Savva, G. C. Kishida, K., see Siegl, R. Knott, J. F., see Streitenberger, P. Krastev, V., see Toneva, A. Index of authors Krog, J. P., see Karpe, N. Kroll, H., see Freer, R. Krstic, V. D., see Zugic, R. Kubin, L. P., see Devincre, B. Kumagai, T., see Abe, E. Kuninaka, H., see Horita, Z. Kuo, K. H., see Sui, H. X. Laabs, F., see Mitra, A. Lang, A., see Cherns, D. Lee, W. E., see McCoy, M. A. Li Dong, see Xu Dong Sheng Liddle, J. A., see Ross, F. M. Lifshits, V. O., see Rozhanskii, N. V. Liu, H. B., Chen, K. Y., Gong, Y. D., An, G. Y., and Hu, Z. Q.: Properties of the liquid—vapour interface of fcc metals calculated using the tight-binding potential 1067 Lu, J., and Szpunar, J. A.: Applications of the embedded-atom method to glass formation and crystallization of liquid and glass transition-metal nickel 1057 Luo, G. M., see Cui, S. F. Luysberg, M., Hapke, P., Carius, R., and Finger, F.: Structure and growth of hydro- genated microcrystalline silicon: investigation by transmission electron micro- scopy and Raman spectroscopy of films grown at different plasma excitation frequencies ee Luzzi, D. E., see Fonda, R. W. Macaulay, J. M., see Ross, F. M. Mai, Z. H., see Cui, S. F. Maniosa, L., see Jurado, M. Marinova, Ts., see Toneva, A. Matsumuro, M., see Inui, H. Mayer, J., see Gutekunst, G. McCaffrey, J. P., Wasilewski, Z. R., Robertson, M. D., and Corbett, J. M.: Measurement of indium segregation in strained In,Ga,_,As/GaAs quantum wells by transmission electron microscopy . McCartney, M. R., see Horita, Z. McColl, I. R., see Zhang, D. McCoy, M. A., Grimes, R. W., and Lee, W. E.: Phase stability and interfacial structures in the SrO-SrTiO; system. Medlin, D. L., Carter, C. B., Angelo, J. E., and Mills, M. Ai Climb and glide of a 3 (111) dislocations in an aluminium Y = 3 boundary Mergia, K., Al-Hazmi, F., Stewart, R. J., and Messoloras, S.: In-s itu+ small- angle neutron scattering study of the growth and dissolution of precipitates in Al-Li alloys . a WG pike Jeo Sekt Messoloras, S., see Mergia, K. Mikhin, A. G., De Diego, N., and Bacon, D. J.: Defect clusters in Zn: a computer simulation study... of | ERE Gia Bae kN ee or Mikulla, R., see Dilger, C. Mills, M. J., see Medlin, D. L. Mishin, Y., and Farkas, D.: Atomistic simulation of point defects and diffusion in B2 NiAl. Part I. Point defect energetics. Mishin, Y., and Farkas, D.: Atomistic simulation of point defects and diffusion iin B2 NiAl. Part II. Diffusion mechanisms Mishin, Y., and Farkas, D.: Monte Carlo simulation of correlation effects ii n1 random bec alloy. . eea ee eee ere ee ee Mitra, A., Chen, Z. J., Laabs, F., and Jiles, D. C.: Micromagnetic Barkhausen emissions in 2:25 wt% Cr—1 wt% Mo steel subjected to creep... Morilla, M. C., Afonso, C. N., Petford-Long, A. K., and Doole, R. C.: The role of oxygen content in the crystallization kinetics of (Sbp.99Geo.;9)O, films. 1734 Index of authors Morin, M., see Jurado, M. Morkog, H., see Vermaut, P. Miiller, S., Jenkins, M. L., Abromeit, C., and Wollenberger, H.: The influence of the surface on the production and development of —_ cascades in Ni3;Al and Cu3Au.. Miillner, P., Gao, H., and ‘Ozkan, Cc. S: A twinned wedgei inta Si Ge epitaxialf ilm: twofold © = 9 twinning . Murch, G. E., see Belova, I. V. Nabarro, F. R. N.: Theoretical and experimental estimates of the Peierls stress Nakamura, M., see Abe, E. Nanneh, M. M., see Dunne, F. P. E. Nenova, Z., see Toneva, A. Ning, X. J.: Dislocations induced by boron diffusion in silicon: a transmission elec- tron microscopy study : Nouet, G., see Braisaz, T. Nouet, G., see Vermaut, P. Ortiz, M., see Xu, G. Osetsky, Yu. N., and Serra, A.: Study of copper precipitates in o-iron by computer simulation. III. The evolution of vacancies within precipitates . Oskam, G., see Ross, F. M. Osterstock, F., see Tancret, F. Ozkan, C. S., see Miillner, P. Park, B. M., Chung, S. J., Kim, H. S., Si, W., and Dudley, M.: Synchrotron white- beam X-ray topography of ferroelectric domains in a BaTiO; single crystal . Passa, E., Shao, G., and Tsakiropoulos, P.: Beta phase decomposition in Nb 17at.% Al alloy . Paufler, P., see Deus, C. Pérez, R. A., Behar, M., and Dyment, F.: Diffusion study of Sn implanted in o-Ti Perrin, B., see Amazit, Y. Petford-Long, A. K., see Morilla, M. C. Planes, A., see Jurado, M. Polian, A., see Amazit, Y. Pond, R. C., see Braisaz, T. Price, P. B., and Bergstrom, L.: Enhanced Rayleigh scattering as a eens of nanoscale defects in highly transparent solids : Priester, L., Khalfallah, O., and Coujou, A.: Image force on a dislocation ii na Ni- based superalloy due to the y—y ‘interface Piischl, W., see Schoeck, G. Rabier, J.: Stress driven polytypoid formation in YBayCu307_, Rao, S. I., see Simmons, J. P. Reyes-Gasga, J., Garcia G., R., and Vargas-Ulloa, L.: Jn-situ observation of fractal structures and electrical conductivity in human tooth enamel . iad * Rickman, J. M., and Vifals, J.: Modelling of dislocation structures in materials . Robertson, M. D., see McCaffrey, J. P. Ross, F. M., Oskam, G., Searson, P. C., Macaulay, J. M., and Liddle, J. A.: Crystallographic aspects of pore formation in gallium arsenide and silicon Roth, J., see Dilger, C. Roth, J., and Henley, C. L.: A new binary decagonal Frank—Kasper quasicrystal Pree Wa Us at) Ske Uh A oe ee eRe a a ei ld Aa an My Rozhanskii, N. V., and Lifshits, V. O.: Transmission electron microscopy study of diffusion processes in thin films of Pd—Ta metallic glasses deposited onto Si . Riihle, M., see Gutekunst, G. Ruterana, P., see Braisaz, T. Ruterana, P., see Vermaut, P.