JOURNAL OF CRYSTAL GROWTH ELSEVIER Journal of Crystal Growth 186 (1998) 648-653 Author index Abe, K., see Machida, N. 186 (1998) 362 Manko, Peculiarities of growing PbWO, Abe, K., K. Terashima, T. Matsumoto, S. scintillator crystals for application in high- Maeda and H. Nakanishi, Fused quartz energy physics 186 (1998) 175 dissolution rate in silicon melts: influence Burak, Ya.V., The peculiarity of twinning in of boron addition 186 (19985)5 7 Li,B,O7, single crystals 186 (1998) 302 Abukawa, T., see Kim, K.-S. 186 (1998) 95 Achargui, N., see Benhida, A. 186 (19985)6 5 Catchpole. K., see Weber, K.J. 186 (1998) 369 Amir, N., see Stolyarova, S. 186 (1998) 55 Chandvankar, S.S., A.P. Shah and B.M. Arora, B.M., see Chandvankar, S.S. 186 (19983)2 9 Arora, Doping and surface morphology of Asahi, H., see Yamamoto, K. 186 (1998) 33 Al,Ga,-,As/GaAs grown at low temper- ature by liquid-phase epitaxy 186 (1998) 329 Bae, I.-H., see Kim, S.-G. 186 (1998) 375 Chen, P., see Gu, H. 186 (1998) 403 Bagieu-Beucher, M., see Zaccaro, J. 186 (1998) 224 Chen, Q., see Sun, X. 186 (1998) 133 Bai, K. and S.T. Jung, Growth and character- Chen, Q.H., see Feng, Q.L. 186 (1998) 245 ization of pure and Er-doped CsLiB,O,o Chen, T.-C. and H.-C. Wu, Stress and deflec- single crystals 186 (1998) 612 tion in GaAs/Si layered heterostructures Bangert, H., see Eisenmenger-Sittner, C. 186 (1998) 151 by improved laminate theory 186 (1998) 571 Bao, D., see Gu, H. 186 (1998) 403 Chen, W., see Wang, B. 186 (1998) 43 Battagliarin, M., see de Oliveira, C.E.M. 186 (1998) 487 Chernov, A.A., see Suvorova, E.I. 186 (1998) 262 Benhida, A., N. Achargui, P. Combette and A. Cho, M.W., see Koh, K.W. 186 (1998) 528 Foucaran, The use of experiment charts for Christensson, F., see Suvorova, E.I. 186 (1998) 262 the fabrication of porous silicon 186 (1998) 565 Christoffersen, J., J. Dohrup and M.R. Chris- Bennema, P., see Maiwa, K. 186 (1998) 214 toffersen, The importance of formation of Bergauer, A., see Eisenmenger-Sittner, C. 186 (1998) 151 hydroxyl ions by dissociation of trapped Bhat, H.L., see Venkataraghavan, R. 186 (1998) 322 water molecules for growth of calcium hy- Bhunia, S. and D.N. Bose, Microwave syn- droxyapatite crystals 186 (1998) 275 thesis, single crystal growth and character- Christoffersen, J., see Christoffersen, M.R. 186 (1998) 283 ization of ZnTe 186 (1998) 535 Christoffersen, M.R., see Christoffersen, J. 186 (1998) 275 Bing, Y., see Yuan, D. 186 (1998) 240 Christoffersen, M.R., J. Dohrup and J. Birch, J., see Fornander, H. 186 (1998) 189 Christoffersen, Kinetics of growth and Blakers, A.W., see Weber, K.J. 186 (1998) 369 dissolution of calcium hydroxyapatite in Bosak, A.A., see Gorbenko, O.Yu. 186 (1998) 181 suspensions with variable calcium to Bose, D.N., see Bhunia, S. 186 (1998) 535 phosphate ratio 186 (1998) 283 Brauer, P. and G. Miiller-Vogt, Measure- Chung, J.-W., Z.R. Dai and F.S. Ohuchi, WS, ments of aluminum diffusion in molten thin films by metal organic chemical vapor gallium and indium 186 (1998) 520 deposition 186 (1998) 137 Bueno, M.I.M.S., see de Oliveira, C.E.M. 186 (1998) 487 Coldren, L.A., see Fish, G.A. 186 (1998) 1 Biihler, L. and S.H. Davis, Flow-induced cha- Combette, P., see Benhida, A. 186 (1998) 565 nges of the morphological stability in di- Cuendet, N., see Tiller, W.A. 186 (1998) 113 rectional solidification: localized morpho- Cui, F.Z., see Feng, Q.L. 186 (1998) 245 logies 186 (1998) 629 Cui, F.Z., see Wen, H.B. 186 (1998) 616 Burachas, S., V. Martynov, V. Ryzhikov, G. Tamulaitis, H.H. Gutbrod and V.I. Dai, Z.R., see Chung, J.-W. 186 (1998) 137 JOURNAL OF CRYSTAL GROWTH ELSEVIER Journal of Crystal Growth 186 (1998) 648-653 Author index Abe, K., see Machida, N. 186 (1998) 362 Manko, Peculiarities of growing PbWO, Abe, K., K. Terashima, T. Matsumoto, S. scintillator crystals for application in high- Maeda and H. Nakanishi, Fused quartz energy physics 186 (1998) 175 dissolution rate in silicon melts: influence Burak, Ya.V., The peculiarity of twinning in of boron addition 186 (19985)5 7 Li,B,O7, single crystals 186 (1998) 302 Abukawa, T., see Kim, K.-S. 186 (1998) 95 Achargui, N., see Benhida, A. 186 (19985)6 5 Catchpole. K., see Weber, K.J. 186 (1998) 369 Amir, N., see Stolyarova, S. 186 (1998) 55 Chandvankar, S.S., A.P. Shah and B.M. Arora, B.M., see Chandvankar, S.S. 186 (19983)2 9 Arora, Doping and surface morphology of Asahi, H., see Yamamoto, K. 186 (1998) 33 Al,Ga,-,As/GaAs grown at low temper- ature by liquid-phase epitaxy 186 (1998) 329 Bae, I.-H., see Kim, S.-G. 186 (1998) 375 Chen, P., see Gu, H. 186 (1998) 403 Bagieu-Beucher, M., see Zaccaro, J. 186 (1998) 224 Chen, Q., see Sun, X. 186 (1998) 133 Bai, K. and S.T. Jung, Growth and character- Chen, Q.H., see Feng, Q.L. 186 (1998) 245 ization of pure and Er-doped CsLiB,O,o Chen, T.-C. and H.-C. Wu, Stress and deflec- single crystals 186 (1998) 612 tion in GaAs/Si layered heterostructures Bangert, H., see Eisenmenger-Sittner, C. 186 (1998) 151 by improved laminate theory 186 (1998) 571 Bao, D., see Gu, H. 186 (1998) 403 Chen, W., see Wang, B. 186 (1998) 43 Battagliarin, M., see de Oliveira, C.E.M. 186 (1998) 487 Chernov, A.A., see Suvorova, E.I. 186 (1998) 262 Benhida, A., N. Achargui, P. Combette and A. Cho, M.W., see Koh, K.W. 186 (1998) 528 Foucaran, The use of experiment charts for Christensson, F., see Suvorova, E.I. 186 (1998) 262 the fabrication of porous silicon 186 (1998) 565 Christoffersen, J., J. Dohrup and M.R. Chris- Bennema, P., see Maiwa, K. 186 (1998) 214 toffersen, The importance of formation of Bergauer, A., see Eisenmenger-Sittner, C. 186 (1998) 151 hydroxyl ions by dissociation of trapped Bhat, H.L., see Venkataraghavan, R. 186 (1998) 322 water molecules for growth of calcium hy- Bhunia, S. and D.N. Bose, Microwave syn- droxyapatite crystals 186 (1998) 275 thesis, single crystal growth and character- Christoffersen, J., see Christoffersen, M.R. 186 (1998) 283 ization of ZnTe 186 (1998) 535 Christoffersen, M.R., see Christoffersen, J. 186 (1998) 275 Bing, Y., see Yuan, D. 186 (1998) 240 Christoffersen, M.R., J. Dohrup and J. Birch, J., see Fornander, H. 186 (1998) 189 Christoffersen, Kinetics of growth and Blakers, A.W., see Weber, K.J. 186 (1998) 369 dissolution of calcium hydroxyapatite in Bosak, A.A., see Gorbenko, O.Yu. 186 (1998) 181 suspensions with variable calcium to Bose, D.N., see Bhunia, S. 186 (1998) 535 phosphate ratio 186 (1998) 283 Brauer, P. and G. Miiller-Vogt, Measure- Chung, J.-W., Z.R. Dai and F.S. Ohuchi, WS, ments of aluminum diffusion in molten thin films by metal organic chemical vapor gallium and indium 186 (1998) 520 deposition 186 (1998) 137 Bueno, M.I.M.S., see de Oliveira, C.E.M. 186 (1998) 487 Coldren, L.A., see Fish, G.A. 186 (1998) 1 Biihler, L. and S.H. Davis, Flow-induced cha- Combette, P., see Benhida, A. 186 (1998) 565 nges of the morphological stability in di- Cuendet, N., see Tiller, W.A. 186 (1998) 113 rectional solidification: localized morpho- Cui, F.Z., see Feng, Q.L. 186 (1998) 245 logies 186 (1998) 629 Cui, F.Z., see Wen, H.B. 186 (1998) 616 Burachas, S., V. Martynov, V. Ryzhikov, G. Tamulaitis, H.H. Gutbrod and V.I. Dai, Z.R., see Chung, J.-W. 186 (1998) 137 Author index Darmo, J., F. Dubecky, H. Hardtdegen, M. Fornander, H., L. Hultman, J. Birch and Hollfelder and R. Schmidt, Deep-level J.-E. Sundgren, Initial growth of Pd on states in MOVPE AlGaAs: the influence of MgO(00 1) 186 (1998) 189 carrier gas 186 (1998) 13 Foucaran, A., see Benhida, A. 186 (1998) 565 Davis, S.H., see Buhler, L. 186 (1998) 629 Friedman, M., see Tiller, W.A. 186 (1998) 113 De Carvalho, M.M.G., see de Oliveira, C.E.M. 186 (1998) 487 Fujibayashi, K., see Tabuchi, M. 186 (1998) 48 De Groot, K., see Wen, H.B. 186 (1998) 616 Fujiwara, K., see Ohashi, N. 186 (1998) 128 De Oliveira, C.E.M., M.M.G. de Carvalho, Fujiwara, S., H. Morishita, T. Kotani, K. Mat- C.A.C. Mendonga, C.R. Miskys, G.M. sumoto and T. Shirakawa, Growth of large Guadalupi, M. Battagliarin and M.I.M.S. ZnSe single crystal by CVT method 186 (1998) 60 Bueno, Characterization of InP grown by Fukuda, T., see Epelbaum, B.M. 186 (1998) 607 LEC using glassy carbon, silica and PBN Fukunaga, O., see Ohashi, N. 186 (1998) 128 crucibles 186 (19984)8 7 De Wijn, J.R., see Wen, H.B. 186 (19986)1 6 Gao, C., see Wang, B. 186 (1998) 43 Demura, M., see Golberg, D. 186 (19986)2 4 Golberg, D., M. Demura and T. Hirano, DenBaars, S.P., see Fish, G.A. 186 (1998) 1 Single crystal growth and characterization DiSalvo, F.J., see Yamane, H. 186 (1998) 8 of binary stoichiometric and Al-rich Ni;Al 186 (1998) 624 Dogan, O., see Oner, M. 186 (19984)2 7 Gonda, S., see Yamamoto, K. 186 (1998) 33 Dohrup, J., see Christoffersen, J. 186 (19982)7 5 Gong, Q., see Li, H. 186 (1998) 309 Dohrup, J., see Christoffersen, M.R. 186 (19982)8 3 Gorbenko, O.Yu. and A.A. Bosak, Growth of Dong, C., see Gu, H. 186 (19984)0 3 LaNiO,; thin films on MgO by flash Dong, J., see Wang, H. 186 (1998) 38 MOCVD 186 (1998) 181 Dorogovin, B.A., see Ostapenko, G.T. 186 (19984)2 0 Greven, K., see Ludwig, A. 186 (1998) 291 Du, J., see Tang, C.C. 186 (19984)7 1 Gu, C., see Yuan, G. 186 (1998) 382 Dubecky, F., see Darmo, J. 186 (1998) 13 Gu, H., C. Dong, P. Chen, D. Bao, A. Kuang Durose, K., see Halliday, D.P. 186 (19985)4 3 and X. Li, Growth of layered perovskite Bi,Ti3;0,, thin films by sol-gel process 186 (1998) 403 Guadalupi, G.M., see de Oliveira, C.E.M. 186 (1998) 487 Eggleston, J.M., see Halliday, D.P. 186 (1998) 543 Gutbrod, H.H., see Burachas, S. 186 (1998) 175 Egry, I., see Langen, M. 186 (1998) 550 Guzman, L.A., K. Maeda, S. Hirota and N. Eguchi, M., see Langen, M. 186 (1998) 550 Kubota, Adsorption of growth suppressor Eisenmenger-Sittner, C., H. Bangert and A. chromium (III) on potassium sulfate crys- Bergauer, Kinetic phase separation in tals in aqueous solution 186 (1998) 438 sputter-deposited aluminium-tin films 186 (1998) 151 Epelbaum, B.M., K. Shimamura, K. Inaba, S. Habuka, H., T. Otsuka and M. Katayama, In Uda, V.V. Kochurikhin, H. Machida, Y. situ cleaning method for silicon surface Terada and T. Fukuda, Edge-defined film- using hydrogen fluoride gas and hydrogen fed (EFG) growth of rare-earth orthovana- chloride gas in a hydrogen ambient 186 (1998) 104 dates REVO, (RE = Y, Gd): interface mor- Hagiwara, K., see Tabuchi, M. 186 (1998) 48 phology effect on crystal shape and mater- Halicioglu, T., see Tiller, W.A. 186 (1998) 113 ial properties , 186 (1998) 607 Halliday, D.P., J.M. Eggleston and K. Durose, Espeso, J., see Zaccaro, J. 186 (1998) 224 A photoluminescence study of polycrystal- line thin-film CdTe/CdS solar cells 186 (1998) 543 Hanada, T., see Koh, K.W. 186 (1998) 528 Fahy, M.R., see Pak, K. 186 (1998) 21 Hardin, G.R., see Peskin, A.P. 186 (1998) 494 Fan, T., see Wang, H. 186 (1998) 38 Hardtdegen, H., see Darmo, J. 186 (1998) 13 Fang, Q., see Yuan, D. 186 (1998) 240 Hasegawa, K., see Kashimoto, E. 186 (1998) 461 Feigelson, R.S., see Lee, S.Y. 186 (1998) 594 Herms, M., K. Roth and G. Irmer, Composi- Feng, Q.L., Q.H. Chen, H. Wang and F.Z. Cui, tion of arsenic and phosphorus vapour in Influence of concentration of calcium ion different annealing geometries determined on controlled precipitation of calcium by Raman spectroscopy 186 (19981)6 6 phosphate within unilamellar lipid vesicles 186 (1998) 245 Hibiya, T., see Nakamura, S. 186 (1998) 85 Fish, G.A., B. Mason, S.P. DenBaars and L.A. Hibiya, T., see Langen, M. 186 (19985)5 0 Coldren, Improved compositional uni- Hidaka, K., see Yamamoto, K. 186 (1998) 33 formity of InGaAsP grown by MOCVD Hirano, T., see Golberg, D. 186 (19986)2 4 through modification of the susceptor tem- Hirata, A., see Nakamura, S. 186 (1998) 85 perature profile 186 (1998) 1 Hirota, S., see Guzman, L.A. 186 (19984)3 8 650 Author index Hollfelder, M., see Darmo, J. 186 (1998) 13 Kimura, S., see Kaito, C. 186 (1998) 386 Hultman, L., see Fornander, H. 186 (1998) 189 Kitano, K., K. Motohashi, M. Yoshida and K. Miki, A novel approach to crystal- Ibanez, A., see Zaccaro, J. 186 (1998) 224 lizing proteins with temperature-induction Igarashi, O., Epitaxial growth of hexagonal method: GrpE protein from Thermus ther- and cubic CdS on (100) and 2° off- mophilus 186 (1998) 456 oriented (100)GaAs and CulnSe,, and Kobashi, A., see Tabuchi, M. 186 (1998) 48 misalignment between [000 1]cgs and Kochurikhin, V.V., see Epelbaum, B.M. 186 (1998) 607 [1 1 l]gaas axes 186 (1998) 344 Koh, K.W., M.W. Cho, Z. Zhu, T. Hanada, Iguchi, T., see Tabuchi, M. 186 (1998) 48 K.H. Yoo, M. Isshiki and T. Yao, Growth Imaishi, N., see Nakamura, S. 186 (1998) 85 of ZnSe on GaAs(1 10) surfaces by mo- Inaba, K., see Epelbaum, B.M. 186 (1998) 607 lecular beam epitaxy 186 (19985)2 8 Irmer, G., see Herms, M. 186 (1998) 166 Koinova, A.M., see Popov, A.S. 186 (19983)3 8 Ishii, T., Y. Tazoh and S. Miyazawa, Single- Komatsu, H., see Kashimoto, E. 186 (19984)6 1 crystal growth of LiGaO), for a substrate Kong, M., see Wang, H. 186 (1998) 38 of GaN thin films 186 (1998) 409 Kong, M., see Li, X. 186 (19982)9 8 Isshiki, M., see Koh, K.W. 186 (1998) 528 Kono, S., see Kim, K.-S. 186 (1998) 95 Koo, J.G., see Kim, S.-G. 186 (19983)7 5 Jia, Y., see Sun, X. 186 (1998) 133 Korsukova, M.M., see Otani, S. 186 (19985)8 2 Jiang, C., see Li, H. 186 (1998) 309 KOBler, R., see Miiller-Vogt, G. 186 (19985)1 1 Jiang, H., see Yuan, G. 186 (1998) 382 Kotani, T., see Fujiwara, S. 186 (1998) 60 Jiang, M., see Yuan, D. 186 (1998) 240 Kuang, A., see Gu, H. 186 (19984)0 3 Kubota, N., see Guzman, L.A. 186 (19984)3 8 Jin, C., see Yuan, G. 186 (1998) 382 Jin, Y., see Yuan, G. 186 (1998) 382 Kvasnitsa, V.N., see Ostapenko, G.T. 186 (19984)2 0 Kwon, M.S., J.Y. Lee, M.D. Kim and T.W. Jitsukawa, H., H. Matsushita and T. Kang, Effects of growth temperature and Takizawa, Phase diagrams of the (Cu,Se, surface treatment on growth orientation CuSe)-CuGaSe, system and the crystal and interface structure during molecular growth of CuGaSe, by the solution method 186 (1998) 587 beam epitaxy of CdTe on (00 1)GaAs 186 (1998) 79 Joyce, B.A., see Pak, K. 186 (1998) 21 Jung, S.T., see Bai, K. 186 (19986)1 2 Lan, C.W. and M.C. Liang, Modeling of dopant segregation in vertical zone- Kaito, C., A. Nonaka, S. Kimura, N. Suzuki melting crystal growth 186 (1998) 203 and Y. Saito, Size effect on solid—solid re- Langen, M., T. Hibiya, M. Eguchi and I. Egry, action growth between Cu film and Se Measurement of the density and the ther- particles 186 (1998) 386 mal expansion coefficient of molten silicon Kakimoto, K., see Nakamura, S. 186 (1998) 85 using electromagnetic levitation 186 (1998) 550 Kamei, H., see Tabuchi, M. 186 (1998) 48 Lee, J.Y., see Kwon, MLS. 186 (1998) 79 Kang, T.W., see Kwon, M.S. 186 (1998) 79 Lee, S.Y. and R.S. Feigelson, Reduced optical Kashimoto, E., G. Sazaki, K. Hasegawa, losses in MOCVD grown lithium niobate T. Nakada, S. Miyashita, H. Komatsu, thin films on sapphire by controlling nu- K. Sato, Y. Matsuura and H. Tanaka, cleation density 186 (1998) 594 Crystallization studies on a concanavalin i, H., J. Wu, Z. Wang, J. Liang, B. Xu, C. A crystal with high-index faces 186 (1998) 461 Jiang, Q. Gong, F. Liu and W. Zhou, Katayama, M., see Habuka, H. 186 (1998) 104 Growth and characterization of In- Kida, M., see Machida, N. 186 (1998) 362 GaAs/InAlAs/InP_high-electron-mobility Kim, J., see Kim, S.-G. 186 (1998) 375 transistor structures towards high channel Kim, K.-S., Y. Takakuwa, T. Abukawa and S. conductivity 186 (1998) 309 Kono, RHEED-AES observation of Sb Li, S., see Yuan, G. 186 (1998) 382 surface segregation during Sb-mediated Si Li, X., D. Sun, M. Kong and S.F. Yoon, Rapid MBE on Si(0.0 1) 186 (1998) 95 thermal annealing processing of GaN epi- Kim, M.D., see Kwon, M.S. 186 (1998) 79 layer on sapphire(00 0 1) 186 (1998) 298 Kim, S.-G., J. Kim, L-H. Bae, J.G. Koo and Li, X., see Gu, H. 186 (1998) 403 K.-S. Nam, Analysis of Si,;_,Ge, on Si Li, X.-G., see Sun, X. 186 (1998) 133 heterostructures grown by MBE as a func- Li, Y.X., see Tang, C.C. 186 (1998) 471 tion of substrate temperature 186 (1998) 375 Liang, J., see Li, H. 186 (1998) 309 Kimura, M., see Tanaka, A. 186 (1998) 305 Liang, M.C., see Lan, C.W. 186 (1998) 203 Author index 651 Liu, F., see Li, H. 186 (1998) 309 Ning, Y., see Yuan, G. 186 (1998) 382 Liu, M., see Yuan, D. 186 (1998) 240 Nishizawa, Shin-ichi, see Nakamura, S. 186 (1998) 85 Liu, S., see Wang, B. 186 (1998) 43 Nonaka, A., see Kaito, C. 186 (1998) 386 Ludwig, A., K. Greven and P.R. Sahm, Mor- phological stability of a planar interface Ohashi, N., K. Fujiwara, T. Tsurumi and subject to rapid quenching 186 (1998) 291 O. Fukunaga, Growth of orthorhombic SrCuO, by a traveling solvent floating Machida, H., see Epelbaum, B.M. 186 (1998) 607 zone method and its phase transformation Machida, N., Y. Suzuki, K. Abe, N. Ono, M. under high pressure 186 (1998) 128 Kida and Y. Shimizu, The effects of argon Ohuchi, F.S., see Chung, J.-W. 186 (1998) 137 gas flow rate and furnace pressure on oxy- Oner, G., see Oner, M. 186 (1998) 427 gen concentration in Czochralski-grown Oner, M., O. Dogan and G. Oner, The influ- silicon crystals 186 (1998) 362 ence of polyelectrolytes architecture on Madsen, H.E.L., see Suvorova, E.I. 186 (1998) 262 calcium sulfate dihydrate growth retar- Maeda, K., see Guzman, L.A. 186 (1998) 438 dation 186 (1998) 427 Maeda, S., see Abe, K. 186 (1998) 557 Ono, N., see Machida, N. 186 (1998) 362 Mah, K.W., see Yoon, S.F. 186 (1998) 475 Ostapenko, G.T., V.N. Kvasnitsa, L.P. Tim- Maiwa, K., M. Plomp, W.J.P. van Enckevort oshkova, N.P. Semenenko and B.A. and P. Bennema, AFM observation of bar- Dorogovin, Synthetic andalusite crystals: ium nitrate {1 1 1} and {100} faces: spiral morphology and growth features 186 (1998) 420 growth and two-dimensional nucleation Otani, S.. M.M. Korsukova and T. Mit- growth 186 (19982)1 4 suhashi, Preparation of HfB, and ZrB, Manko, V.I., see Burachas, S. 186 (19981)7 5 single crystals by the floating-zone method 186 (1998) 582 Martynov, V., see Burachas, S. 186 (19981)7 5 Otsuka, T., see Habuka, H. 186 (1998) 104 Mason, B., see Fish, G.A. 186 (1998) 1 Matsumoto, K., see Fujiwara, S. 186 (1998) 60 Matsumoto, T., see Abe, K. 186 (19985)5 7 Pak, K., M.R. Fahy, X.-M. Zhang and B.A. Joyce, The substrate orientation depend- Matsushita, H., see Jitsukawa, H. 186 (19985)8 7 ence of In atom incorporation during the Matsuura, Y., see Kashimoto, E. 186 (19984)6 1 Mendonga, C.A.C., see de Oliveira, C.E.M. 186 (19984)8 7 growth of (In,Ga)As on GaAs by molecu- lar-beam epitaxy 186 (1998) 21 Miki, K., see Kitano, K. 186 (19984)5 6 Peng, Y., see Wang, B. 186 (1998) 43 Miskys, C.R., see de Oliveira, C.E.M. 186 (19984)8 7 Peskin, A.P. and G.R. Hardin, Gallium arsen- Mitsuhashi, T., see Otani, S. 186 (19985)8 2 Miyashita, S., see Kashimoto, E. 186 (19984)6 1 ide growth in a pancake MOCVD reactor 186 (19984)9 4 Plomp, M., see Maiwa, K. 186 (1998) 214 Miyazawa, S., see Ishii, T. 186 (19984)0 9 Pokrovsky, O.S., Precipitation of calcium and Morishita, H., see Fujiwara, S. 186 (1998) 60 magnesium carbonates from homogene- Morita, T.S., see Nakamura, S. 186 (1998) 85 Motohashi, K., see Kitano, K. 186 (19984)5 6 ous supersaturated solutions 186 (1998) 233 Popov, A.S., A.M. Koinova and S.L. Tzeneva, Mukai, K., see Nakamura, S. 186 (1998) 85 The In-As-Sb phase diagram and LPE Miiller-Vogt, G. and R. K6Bler, Application of growth of InAsSb layers on InAs at ex- the shear cell technique to diffusivity tremely low temperatures 186 (1998) 338 measurements in melts of semiconducting Potapenko, S.Y., Formation of solution inclu- compounds: Ga—Sb 186 (1998) 511 sions in crystal under effect of solution Miiller-Vogt, G., see Brauer, P. 186 (1998) 520 flow 186 (1998) 446 Nakada, T., see Kashimoto, E. 186 (1998) 461 Nakagawa, T., see Sugaya, T. 186 (1998) 27 Radhakrishnan, K., see Yoon, S.F. 186 (1998) 315 Rao, K.S.R.K., see Venkataraghavan, R. 186 (1998) 322 Nakamura, S., T. Hibiya, K. Kakimoto, N. Rosenberger, F., see Vekilov, P.G. 186 (1998) 251 Imaishi, S.-i. Nishizawa, A. Hirata, K. Roth, K., see Herms, M. 186 (1998) 166 Mukai, S.-i. Yoda and T.S. Morita, Tem- Ryzhikov, V., see Burachas, S. 186 (1998) 175 perature fluctuations of the Marangoni flow in a liquid bridge of molten silicon under microgravity on board the TR-IA-4 Sahm, P.R., see Ludwig, A. 186 (1998) 291 rocket 186 (1998) 85 Saito, Y., see Kaito, C. 186 (1998) 386 Nakanishi, H., see Abe, K. 186 (1998) 557 Sato, K., see Kashimoto, E. 186 (1998) 461 Nam, K.-S., see Kim, S.-G. 186 (1998) 375 Satoh, J., see Yamamoto, K. 186 (1998) 33 Nemirovsky, Y., see Stolyarova, S. 186 (1998) 55 Sazaki, G., see Kashimoto, E. 186 (1998) 461 652 Author index Schmidt, R., see Darmo, J. 186 (1998) 13 Tamulaitis, G., see Burachas, S. 186 (1998) 175 Sekiguchi, T., see Yamane, H. 186 (1998) 8 Tanaka, A., T. Yoneyama, M. Kimura and T. Semenenko, N.P., see Ostapenko, G.T. 186 (1998) 420 Sukegawa, Control of GaInSb alloy com- Shah, A.P., see Chandvankar, S.S. 186 (1998) 329 position grown from ternary solution 186 (1998) 305 Shaw, R., see Tiller, W.A. 186 (1998) 113 Tanaka, H., see Kashimoto, E. 186 (1998) 461 Shi, J., K. Zhu, W. Yao and L. Zhang, Growth Tang, C.C., Y.X. Li, J. Du, G.H. Wu and WSS. of InAs nanocrystals embedded in SiO, Zhan, Growth of iron-based Laves phase films by radio-frequency magnetron co- containing Pr and Nd magnetostrictive sputtering 186 (1998) 480 materials 186 (1998) 471 Shimada, M., see Yamane, H. 186 (1998) 8 Tanuma, Y., see Sugaya, T. 186 (1998) 27 Shimamura, K., see Epelbaum, B.M. 186 (1998) 607 Tazoh, Y., see Ishii, T. 186 (1998) 409 Shimizu, Y., see Machida, N. 186 (1998) 362 Terada, Y., see Epelbaum, B.M. 186 (1998) 607 Shin, H.-Y. and C.-Y. Sun, Temperature- Terashima, K., see Abe, K. 186 (1998) 557 gradient-solution grown CdTe crystals for Tian, Y., see Yuan, G. 186 (1998) 382 y-ray detectors 186 (1998) 67 Tiller, W.A., M. Friedman, R. Shaw, N. Cuen- Shin, H.-Y. and C.-Y. Sun, Photoluminescence det and T. Halicioglu, Grown-in point de- spectra of Cl-doped CdTe crystals 186 (19983)5 4 fects and microscopic defect formation in Shirakawa, T., see Fujiwara, S. 186 (1998) 60 CZ silicon. I. The one-dimensional, steady- Song, H., see Yuan, G. 186 (19983)8 2 state approximation 186 (1998) 113 Stolyarova, S., N. Amir and Y. Nemirovsky, Timoshkova, L.P., see Ostapenko, G.T. 186 (1998) 420 Rapid thermal metal organic chemical va- Tsurumi, T., see Ohashi, N. 186 (1998) 128 por deposition of ZnTe 186 (1998) 55 Tzeneva, S.L., see Popov, A.S. 186 (1998) 338 Sugaya, T., T. Nakagawa, Y. Sugiyama, Y. Tanuma and K. Yonei, Effects of As, flux Uda, S., see Epelbaum, B.M. 186 (1998) 607 for fabrication of GaAs/AlGaAs quantum wires on V-grooved substrates in molecu- lar beam epitaxy 186 (1998) 27 Van den Brink, J., see Wen, H.B. 186 (1998) 616 Sugiyama, Y., see Sugaya, T. 186 (1998) 27 Van Enckevort, W.J.P., see Maiwa, K. 186 (1998) 214 Sukegawa, T., see Tanaka, A. 186 (1998) 305 Vekilov, P.G. and F. Rosenberger, Protein Sun, C.-Y., see Shin, H.-Y. 186 (1998) 67 crystal growth under forced solution flow: Sun, C.-Y., see Shin, H.-Y. 186 (1998) 354 experimental setup and general response of Sun, D., see Li, X. 186 (1998) 298 lysozyme 186 (1998) 251 Sun, S., see Yuan, D. 186 (1998) 240 Venkataraghavan, R., K.S.R.K. Rao and H.L. Sun, X., W. Wu, Q. Chen, Y. Jia, G. Zhou, Bhat, The effect of temperature gradient X.-G. Li and Y. Zhang, Preparation and and ampoule velocity on the composition characterization of a new single crystal and other properties of Bridgman-grown Bi2Sr,.5Pr2,;Cu,0, 186 (1998) 133 indium antimonide 186 (1998) 322 Sundgren, J.-E., see Fornander, H. 186 (1998) 189 Suvorova, E.I., F. Christensson, H.E.L. Mad- Wang, B., Y. Peng, F. Zhao, W. Chen, S. Liu sen and A.A. Chernov, Terrestrial and and C. Gao, Spontaneously ordered InAs space-grown HAP and OCP crystals: ef- self-assembled quantum dots grown on fect of growth conditions on perfection and morphology 186 (19982)6 2 GaAs/InP substrate 186 (1998) 43 Suzuki, N., see Kaito, C. 186 (19983)8 6 Wang, H., T. Fan, J. Wu, Y. Zeng, J. Dong and Suzuki, Y., see Machida, N. 186 (19983)6 2 M. Kong, Effects of growth temperature Swaminathan, S., see Yoon, S.F. 186 (19983)1 5 on highly mismatched InAs grown on GaAs substrates by MBE 186 (1998) 38 Wang, H., see Feng, Q.L. 186 (1998) 245 Tabuchi, M., K. Fujibayashi, N. Yamada, K. Wang, Z., see Li, H. 186 (1998) 309 Hagiwara, A. Kobashi, T. Iguchi, Y. Weber, K.J., K. Catchpole and A.W. Blakers, Takeda and H. Kamei, Determination Epitaxial lateral overgrowth of Si on of composition distributions in InP/ (1 0 0)Si substrates by liquid-phase epitaxy 186 (1998) 369 InGaAs/InP quantum-well structures by Wen, H.B., J. van den Brink, J.R. de Wijn, F.Z. X-ray crystal truncation rod scattering and Cui and K. de Groot, Crystal growth of quantum levels 186 (1998) 48 calcium phosphate on chemically treated Takakuwa, Y., see Kim, K.-S. 186 (1998) 95 titanium 186 (1998) 616 Takeda, Y., see Tabuchi, M. 186 (1998) 48 Wu, G.H., see Tang, C.C. 186 (1998) 471 Takizawa, T., see Jitsukawa, H. 186 (1998) 587 Wu, H.-C., see Chen, T.-C. 186 (1998) 571 Author index Wu, J., see Wang, H. 186 (1998) 38 Yuan, D., Z. Zhong, M. Liu, D. Xu, Q. Fang, Wu, J., see Li, H. 186 (1998) 309 Y. Bing, S. Sun and M. Jiang, Growth of Wu, W., see Sun, X. 186 (1998) 133 cadmium mercury thiocyanate single crys- tal for laser diode frequency doubling 186 (1998) 240 Xu, B., see Li, H. 186 (1998) 309 Yuan, G., Y. Jin, C. Jin, B. Zhang, H. Song, Y. Xu, D., see Yuan, D. 186 (1998) 240 Ning, T. Zhou, H. Jiang, S. Li, Y. Tian and C. Gu, Growth of diamond on silicon tips 186 (1998) 382 Yamada, N., see Tabuchi, M. 186 (1998) 48 Yamamoto, K., H. Asahi, K. Hidaka, J. Satoh and S. Gonda, Metalorganic molecular Zaccaro, J., M. Bagieu-Beucher, J. Espeso and beam epitaxy and etching of AlGaSb using A. Ibanez, Structural characterization and trisdimethylaminoantimony 186 (1998) 33 crystal growth of the 2-amino-S5-nit- Yamane, H., M. Shimada, T. Sekiguchi, FJ. ropyridinium dihydrogenphosphate/ar- DiSalvo, Morphology and characteriza- senate hybrid solid solution 186 (1998) 224 tion of GaN single crystals grown in a Na Zeng, H.C., Vapour phase growth of orthor- flux 186 (1998) 8 hombic molybdenum trioxide crystals at Yao, T., see Koh, K.W. 186 (19985)2 8 normal pressure of purified air 186 (19983)9 3 Yao, W., see Shi, J. 186 (19984)8 0 Zeng, Y., see Wang, H. 186 (1998) 38 Yoda, Shin-ichi, see Nakamura, S. 186 (1998) 85 Zhan, W.S., see Tang, C.C. 186 (19984)7 1 Yonei, K., see Sugaya, T. 186 (1998) 27 Zhang, B., see Yuan, G. 186 (19983)8 2 Yoneyama, T., see Tanaka, A. 186 (19983)0 5 Zhang, L., see Shi, J. 186 (19984)8 0 Yoo, K.H., see Koh, K.W. 186 (19985)2 8 Zhang, P.H., see Yoon, S.F. 186 (19983)1 5 Yoon, S.F., see Li, X. 186 (19982)9 8 Zhang, P.H., see Yoon, S.F. 186 (19984)7 5 Yoon, S.F., P.H. Zhang, H.Q. Zheng, K. Rad- Zhang, X.-M., see Pak, K. 186 (1998) 21 hakrishnan and S. Swaminathan, Substra- Zhang, Y., see Sun, X. 186 (19981)3 3 te temperature effects on the growth of Zhao, F., see Wang, B. 186 (1998) 43 In, -,-,Ga,Al,As on InP substrates by Zheng, H.Q., see Yoon, S.F. 186 (19983)1 5 molecular beam epitaxy 186 (1998) 315 Zheng, H.Q., see Yoon, S.F. 186 (19984)7 5 Yoon, S.F., H.Q. Zheng, P.H. Zhang and K.W. Zhong, Z., see Yuan, D. 186 (19982)4 0 Mah, Electrical and optical properties of Zhou, G., see Sun, X. 186 (19981)3 3 InP grown at different cracking temper- Zhou, T., see Yuan, G. 186 (19983)8 2 ature and V/III ratio using a valve phos- Zhou, W., see Li, H. 186 (19983)0 9 phorous cracker cell 186 (1998) 475 Zhu, K., see Shi, J. 186 (19984)8 0 Yoshida, M., see Kitano, K. 186 (1998) 456 Zhu, Z., see Koh, K.W. 186 (19985)2 8 JOURNAL OF CRYSTAL GROWTH Journal of Crystal Growth 186 (1998) 654-655 Subject index Apparatus — of growth 43, 151, 189, 251, 275, 283, 420, 427, 438 — for crystal growth — of interface control 322 ——in solution 224 ~ of nucleation 151, 189, 233, 245, 275 ~— of protein 251 — of vapor dissociation 166 — for growth of homogeneous alloys 305 — for liquid phase epitaxy 329 Lasers, crystals — for surface topography — for generating blue light 240 —— by atomic force microscopy 214 — for nonlinear optics 224 Cellular growth Melt growth technique — of andalusite crystals 420 — by Bridgman-Stockbarger method — of porous silicon 565 —— of indium antimonide 322 Computer simulation — by Czochralski method — of binary material systems 151 —— of cerium iron 471 — of vertical zone melting crystal growth 203 ~—— of indium phosphide 487 Convection 60, 166, 203, 251 —— of led tungstate 175 ~ — of lithium gallium oxide 409 Device characterization —— of lithium tetraborate 302 — deep-level transient spectroscopy 13 —— of silicon 113, 362 ~ electronic materials 13 — by edge-defined film-fed ~ laser diode frequency doubling 240 —— of rare-earth orthovanadates 607 — photovoltaic devices 543 — by floating zone method — quantum wells 48 ~ — of aluminum-rich nickel aluminates 624 — quantum wires and dots 27, 43 —-— of hafnium borate 582 Diffusional control ~— of strontium cuprate 128 — of aluminum in molten gallium and indium 520 —— of zirconium borate 582 — of indium in molten gallium 511 — by temperature gradient solution — of point defects 113 —— of cadmium telluride 67 Dissolution ~ by uniaxial solidification 629 — of calcium hydroxyapatite 275, 283 — by vertical Bridgman method — of silicon dioxide and boron in molten silicon 557 ~— of zinc telluride 535 — by zone melting Electronic materials, see Device characterization —— of germanium 203 Epitaxy, see Thin film growth Microgravity, growth under 85 Etching — of crystal shape 607 — chemical 33, 302, 616 ~ of hydroxyapatite 262 — of lysozyme 251 Heat flow control — of octacalcium phosphate 262 — of vertical zone melting 203 Morphological stability 629 Hydrodynamics, see Convection — of lithium tetraborate 302 — of solid-liquid interface 291 Kinetics — of vicinal crystal face 446 — of diffusion in molten gallium 511, 520 — of zinc selenide 60 Subject index Nucleation Thermophysical properties of molten silicon 550 - of calcium carbonate 233 Thin film growth, epitaxy — of calcium phosphate 245 ~— by electrochemical anodization — of lithium niobate 594 ~-— of porous silicon 565 — of palladium 189 — by liquid phase epitaxy Numbers ~— of aluminum gallium arsenide 329 — Grashof 629 —— of indium arsenide antimonide 338 ~— Marangoni 85 ~— of silicon 369 — Rayleigh 203, 629 — by metalorganic molecular beam epitaxy — Schmidt 629 —— of aluminum gallium antimonide 33 —— of tungsten sulphide 137 Phase diagram — by molecular beam epitaxy — of arsenic and phosphorus 166 ~— of aluminum gallium arsenide 27 — of copper gallium selenide 587 ~— of cadmium telluride 79 — of indium arsenide antimonide 338 ~— of gallium arsenide 27 Precursor ~~ of gallium nitride 298 ~ for calcite 233 ~~ of germanium silicon 375 — for metalorganic chemical vapor deposition 137 ~~ of indium aluminum arsenide 309 Purification, of germanium 203 ~~ of indium arsenide 38 —— of indium gallium arsenide 21, 309 Quantum dots, wells and wires, see Device characterization ~— of indium gallium aluminum arsenide 315 —— of indium phosphide 475 Solid growth technique — by solid-solid reaction - — of lithium gallium oxide 409 — — of silicon 95 —— of copper selenide 386 ~— of zine selenide 528 — by strain anneal — by sol-gel method ~—— of gallium nitride 298 —— of bismuth titanate 403 Solution growth technique — by vapor phase epitaxy ~ by Czochralski method ~— through chemical vapor deposition —— of gallium indium antimonide 305 ~~ — of cadmium sulphide 344 — by flux method ~ —- of copper indium selenide 344 —-— of bismuth strontium praseodymium cuprate 133 ~~ — of diamond 382 -— of cesium lithium borate 612 -~— of silicon 104 —— of copper gallium selenide 587 —— of gallium nitride 8 —— through evaporation and condensation ~ — of indium gallium arsenide 48 ~~ of hydroxyapatite 616 ~~ — of indium gallium arsenide phosphide 1 ~—— of octacalcium phosphate 616 ——- of indium phosphide 48 - of protein 456 ~— of lanthanum nickelate 181 — by gel method ~—— of palladium 189 —— of bismuth titanate 403 ~~ through magnetron cosputtering — by hydrothermal growth ~~ — of indium arsenide 480 ~~ of aluminosilicate 420 ~~ through magnetron sputtering — by salting out method ~~ — of aluminum tin 151 — —of concanavalin A 461 —— through metalorganic chemical vapor deposition —— of lectin protein 461 ——-— of aluminum gallium arsenide 13 — by supersaturated aqueous solution 214 -— of gallium arsenide 494 Stefan problem or moving boundary problem ~— of indium arsenide 43 — of point defects distribution 113 ~ — of lithium niobate 594 Superlattices, multilayers ——-— of zinc telluride 55 - of gallium arsenide, silicon 571 Surface energy, determination Vapor growth technique — of calcium carbonate 233 - by chemical transport — of calcium hydroxyapatite 275, 283 —— of zinc selenide 60 — of concanavalin A 461 - by evaporation and condensition Surface structure ~— of molybdenum trioxide 393 — of barium nitrate 214 - of calcium hydroxyapatite 275