Journal of Crystal Growth 112 (1991) 841-846 North-Holland Author index Abell, J.S., see Gencer 112 (19913)3 7 Benson, S.W., see Francis 112 (19914)7 4 Agostinelli, E., see Leccabue 112 (19916)4 4 Bierlein, J.D., see Cheng 112 (19913)0 9 Allard, L.F., see Bamberger 112 (1991) 47 Bilgram, J.H., see Steininger 112 (1991) 201 Allerman, A.A., P.A. Barnes and S.D. Walck, Bindal, M.M., S.K. Singhal, B.P. Singh, R.K. Uniform radial flow epitaxy for thin layer Nayar, R. Chopra and A. Dhar, Synthesis heterostructures 112 (19915)8 3 of cubic boron nitride using magnesium Andrieu, S. and F. Arnaud d’Avitaya, Ga as the catalyst 112 (1991) 386 adsorption on Si (111) analysed by Blaha, J., see McCrary 112 (1991) 39 RHEED and in situ ellipsometry 112 (19911)4 6 Boland, J.J., see Takamori 112 (1991) 660 Arnaud d’Avitaya, F., see Andrieu 112 (19911)4 6 Bolt, R.J.. M. van der Mooren and M.T. Ashida, M., see Ueda 112 (19915)0 7 Sebastian, Etching experiments on flux Asom, M.T., J. Mosovsky, R.E. Leibenguth, grown potassium titanyl phosphate KTiO J.L. Zilko and G. Cadet, Transient arsine PO, (KTP) 112 (1991) 773 generation during opening of solid source Borisov, A.G., O.P. Fedorov and V.V. MBE chambers 112 (19915)9 7 Maslow, Growth of succinonitrile den- Asonen, H., see Tappura 112 (1991) 27 drites in different crystallographic direc- Assenov, R. and E.K. Polychroniadis, On the tions 112 (19914)6 3 comparative characterization of single Borle, W.N., see Bagai 112 (19914)0 2 crystalline PbTe(I) grown by vertical Borrego, J.M., see Venkatasubramanian 112 (1991) 7 Bridgman and travelling heater methods 112 (1991) 227 Bothra, S., see Venkatasubramanian 112(1991) 7 Augustus, P.D., see Kightley 112 (1991) 359 Boutellier, R., see Sun 112 (1991) 71 Bradley, R.R., see Kightley 112 (19913)5 9 Baeta Moreira, M.V., M.A. Py and E. Tuncel, Braun, R.J. and S.H. Davis, Oscillatory insta- A correlation between surface mor- bilities in rapid directional solidification: phology and RHEED intensity variation bifurcation theory 112 (1991) 670 for growth of GaAs by molecular beam Breuilly, L., see Muranaka 112 (19918)0 8 epitaxy 112 (1991) 14 Bronshteyn, V.L. and A.A. Chernov, Freez- Bagai, R.K., M. Srivastava, K. Sharma and ing potentials arising on solidification of W.N. Borle, In-situ delineation of defects dilute aqueous solutions of electrolytes 112 (19911)2 9 in ISOVPE-grown Hg, _ .Cd,Te layers 112 (19914)0 2 Burkhardt, E., see Sun 112 (1991) 71 Balk, P., see Kayser 112 (1991) 111 Ballman, A.A., see Cheng 112 (1991) 309 Bamberger, C.E., L.F. Allard, D.W. Coffey Cadet, G., see Asom 112 (1991) 597 and M.R. Bennett, Whiskers of TiN by Cadoret, R., see Chaput 112 (1991) 691 topochemical reaction 112 (1991) 47 Cao, X.Z. and A.F. Witt, Decorated disloca- Barber, P.G., J.T. Petty and R.L. Stevens, tions in SI-GaAs as revealed by dark field Crystal growth precursors of YBa,Cu, NIR transmission microscopy 112 (1991) 838 O,_., predicted from crystal habits by use Chang, H.S.W., see Schleich 112 (19917)3 7 of moments of momentum 112 (1991) 613 Chang, R.S.F., see Shaw 112 (1991) 731 Barnes, P.A., see Allerman 112 (1991) 583 Chaput, L., R. Cadoret and M. Mihailovic, Baughman, R.J., Quartz crystal growth 112 (1991) 753 Experimental and theoretical study of InP Baxter, C.S., W.M. Stobbs and J.H. Wilkie, homoepitaxy by chemical vapour deposi- The morphology of ordered structures in tion from gaseous indium chloride and III-V alloys: inferences from a TEM hydrogen diluted phosphine 112 (1991) 691 study 112 (19913)7 3 Cheng Gan Chao, Qian Zhi Qiang, Tang Beaglehole, D., Surface melting of small par- Guang Kui, Song Wen Bao and Tang ticles, and the effects of surface impurities 112 (19916)6 3 Hong Gao, Top seeded growth of Bennett, M.R., see Bamberger 112 (1991) 47 KTiOPO, from molten tungstate solution 112 (1991) 294 842 Author index Cheng, L.K., J.D. Bierlein, C.M. Foris and Givargizov, E.I., M.O. Kliya, V.R. Melik- A.A. Ballman, Growth of epitaxial thin Adamyan, A.I. Grebenko, R.C. DeMattei films in the KTiOPO, family of crystals 112 (19913)0 9 and RS. Feigelson, Artificial epitaxy Chernov, A.A., see Bronshteyn 112 (19911)2 9 (graphoepitaxy) of proteins 112 (19917)5 8 Chernov, A.A., see Mikheev 112 (19915)9 1 Glicksman, M.E., see Rubinstein 112 (1991) 84 Chopra, R., see Bindal 112 (19913)8 6 Glicksman, M.E., see Rubinstein 112 (1991) 97 Chu, S.N.G., see McCrary 112 (1991) 39 Goodhew, P.J., see Kightley 112 (19913)5 9 Coffey, D.W., see Bamberger 112 (1991) 47 Grabmaier, B.C., see Trauth 112 (19914)5 1 Cotell, C.M., see Panish 112 (19913)4 3 Grant, M., see Weeks 112 (19912)4 4 Grebenko, A.I., see Givargizov 112 (19917)5 8 Dabringhaus, H., see Helmrich 112 (1991) 824 Green, M.A., see Healy 112 (19912)8 7 Davis, S.H., see Braun 112 (1991) 670 Goto, T., see lijima 112 (19914)6 7 DeMattei, R.C., see Givargizov 112 (1991) 758 Deymier, P.A., see Shamsuzzoha 112 (1991) 635 Hakkarainen, T., see Tappura 112 (1991) 27 Dhar, A., see Bindal 112 (1991) 386 Hamm, R.A., see Panish 112 (19913)4 3 Doi, Y., see lijima 112 (1991) 467 Hanada, T., see Kawai 112 (19917)4 5 Doyle, S.E., A.R. Gerson, K.J. Roberts, J.N. Hanssen, L.M., see Snail 112 (19916)5 1 Sherwood and T. Wroblewski, Probing Hartman, P., see Van der Voort 112 (19914)4 5 the structure of solids in a liquid environ- Hatakoshi, G., see Nishikawa 112 (19916)2 8 ment: a recent in-situ crystallisation ex- Healy, S.A., T.L. Young and M.A. Green, periment using high energy wavelength Low-temperature growth of silicon on scanning X-ray diffraction 112 (1991) 302 Si, _ Ga, by liquid phase epitaxy 112 (19912)8 7 Helmrich, R., H. Dabringhaus, H. Frey and Eguchi, M., see Kakimoto 112 (1991) 819 H.J. Meyer, Investigation of condensation and evaporation of alkali halide crystals Fan, Y.D., see Tang 112 (19914)0 7 by molecular beam methods. XIII. Devel- Fedorov, O.P., see Borisov 112 (19914)6 3 opment of two-dimensional islands on the Fedorov, V.A., V.A. Ganshin and Yu.N. (100) surface of KCl 112 (1991) 824 Korkishko, Ion exchange in zinc selenide Hibiya, T., see Kakimoto 112 (1991) 819 crystals: the role of lattice-misfit-induced Hicks, R.F., see Liu 112 (1991) 192 stresses and dislocations 112 (19917)8 1 Higuchi, M., T. Hosokawa and S. Kimura, Feigelson, R.S., see Givargizov 112 (19917)5 8 Growth of rutile single crystals by float- Feng, Y.J., see Tang 112 (19914)0 7 ing zone method 112 (19913)5 4 Fiorani, D., see Leccabue 112 (19916)4 4 Hirai, T., see Suzuki 112 (19916)2 1 Foris, C.M., see Cheng 112 (19913)0 9 Hirota, Y., T. Isshiki, K. Okashita and M. Fox, B.A., see Jansen 112 (19913)1 6 Shiojiri, High-resolution transmission Francis, J.T., S.W. Benson and T.T. Tsotsis, electron microscopy of growth and struc- Kinetics of the very low pressure pyroly- tures of Ag—-Te and Cu-Se crystals pro- sis of trimethylgallium and arsine 112 (19914)7 4 duced by solid—solid reactions 112 (1991) 55 Frey, H., see Helmrich 112 (19918)2 4 Hladina, R., see Leitner 112 (19914)3 7 Frigeri, C., see Licci 112 (19916)0 6 Hobbs, A.K. and Ph. Metzener, Long-wave Fujishiro, H., see Sakurai 112 (19911)5 3 instabilities in directional solidification Fukuda, T., see Machida 112 (19918)3 5 with remote flow 112 (19915)3 9 Fukuoka, M., see Ueda 112 (19915)0 7 Hogan, L.M., see Shamsuzzoha 112 (19916)3 5 Furuhata, N. and A. Okamoto, Selective Hosaka, M., Synthesis of micro a-quartz growth mechanism of GaAs in metalor- crystals by hydrothermal hot-press meth- ganic molecular beam epitaxy 112(1991) 1 od 112 (19912)9 1 Hosokawa, T., see Higuchi 112 (19913)5 4 Ganshin, V.A., see Fedorov 112 (1991) 781 Hou Li, see Qi 112 (19915)8 0 Gao, D., A.W. Stevenson, S.W. Wilkins and Hovinen, M., see Tappura 112 (1991) 27 G.N. Pain, Anisotropic microstructure in Huang Bingrong, Su Genbo and Pan Feng, Cd,_,Mn,Te/Cd,_,Mn,Te superlat- Growth of urea crystals with very large tices studied by X-ray diffraction 112 (19914)8 7 cross-sectional area 112 (19917)2 9 Gencer, F. and J.S. Abell, The growth of Huang Chaoen, see Ji 112 (19912)8 3 YBa,Cu,0,_; single crystals with the aid Hunt, J.D., see Rodway 112 (19915)5 4 of a NaCl-KCI flux 112 (19913)3 7 Hunt, J.D., see Rodway 112 (19915)6 3 Gerson, A.R., see Doyle 112 (19913)0 2 Huo Yujing, see Ji 112 (19912)8 3 Author index Igasaki, Y., H. Yamauchi and S. Okamura, Balk, Control of selective area growth of Structural properties of In—Se thin films InP 112 (1991) 111 prepared by direct evaporation of InSe Keller, K.W., Spontaneous and preferential chunk 112 (1991) 797 two-dimensional nucleation — a quantita- lida, S., see Katoh 112 (1991) 368 tive analysis of growth hill observations 112 (1991) 496 Iijima, M., H. Kamemizu, N. Wakamatsu, T. Kightley, P., P.J. Goodhew, R.R. Bradley and Goto, Y. Doi and Y. Moriwaki, Precipita- P.D. Augustus, A mechanism of misfit tion of octacalcium phosphate at 37°C dislocation reaction for GalnAs strained and at pH 7.4: in relation to enamel for- layers grown onto off-axis GaAs sub- mation 112 (1991) 467 strates 112 (19913)5 9 lijima, M. and Y. Moriwaki, Lengthwise and Kimura, S., see Higuchi 112 (1991) 354 oriented growth of octacalcium phosphate Kimura, T., see Kajigaya 112 (1991) 123 on cation selective membrane in a model Klima, P., see Leitner 112 (19914)3 7 system of enamel formation 112 (19915)7 1 Kliya, M.O., see Givargizov 112 (1991) 758 Inoue, T., M. Kuriyama and H. Komatsu, Kobayashi, N., Oxygen transport under an Growth of CuCl single crystals by the top axial magnetic field in Czochralski silicon seeded solution growth method 112 (19915)3 1 growth (E) 112 (1991) 308 Ishikawa, M., see Nishikawa 112 (19916)2 8 Kokubun, Y., see Nishikawa 112 (19916)2 8 Isshiki, T., see Hirota 112 (1991) 55 Komatsu, H., see Inoue 112 (19915)3 1 Ito, Y., K. Kushida and H. Takeuchi, Role Korkishko, Yu.N., see Fedorov 112 (19917)8 1 of chromium sublayers in the growth of Krémaf, S., see Sdhnel 112 (19914)1 5 highly crystalline (111)-oriented gold films Kfivankova, I., see S6hnel 112 (19914)1 5 on sapphire 112 (1991) 427 Kumabe, H., see Nishimura 112 (19917)9 1 Kuriyama, M., see Inoue 112 (1991) 531 Jansen, A.N., M.E. Orazem, B.A. Fox and Kushida, K., see Ito 112 (19914)2 7 W.A. Jesser, Numerical study of the in- Kusunoki, T., C. Takenaka and K. Nakajima, fluence of reactor design on MOCVD with LEC growth of InGaAs bulk crystal fed a comparison to experimental data 112 (1991) 316 with a GaAs source 112 (1991) 33 Jesser, W.A., see Jansen 112 (19913)1 6 Ji Yangyang, Zhao Shuging, Huo Yujing, Larsen, C.A., see Li 112 (1991) 515 Zhang Hongwu, Li Ming and Huang Leccabue, F., R. Panizzieri, B.E. Watts, D. Chaoen, Growth of lithium triborate Fiorani, E. Agostinelli, A. Testa and E. (LBO) single crystal fiber by the laser- Paparazzo, Growth, thermodynamic and heated pedestal growth method 112 (1991) 283 magneto-structural study of FeGa,O, Juréova, M., see Séhnel 112 (1991) 415 single crystals 112 (19916)4 4 Lee, C.Y., see Wu 112 (1991) 803 Kadoiwa, K., see Nishimura 112 (1991) 791 Lee, J.W., see McCrary 112 (1991) 39 Kadota, Y., see Kajigaya 112 (1991) 123 Lee, P., see Ren 112 (1991) 587 Kagawa, M., see Suzuki 112 (19916)2 1 Leibenguth, R.E., see Asom 112 (1991) 597 Kajigaya, T., T. Kimura and Y. Kadota, Ef- Leitner, J., J. Mikulec, P. Vonka, J. Stejskal, fect of the magnetic flux direction on R. Hladina and P. Klima, Thermody- LEC GaAs growth under magnetic field 112 (1991) 123 namic analysis of the deposition of GaAs Kakimoto, K., M. Eguchi and T. Hibiya, epitaxial layers prepared by the MOCVD In-situ monitoring of dopant concentra- method 112 (19914)3 7 tion variation in a silicon melt during Li, H.D., see Tang 112 (19914)0 7 Czochralski growth 112 (1991) 819 Li Ming, see Ji 112 (19912)8 3 Kamemizu, H., see Iijima 112 (1991) 467 Li, S.H., C.A. Larsen and G.B. Stringfellow, Katayama, S., see Yokota 112 (1991) 723 Radical reactions in pyrolysis of triethyl- Katoh, M., S. lida, Y. Sugiia and K. arsine and diethylarsine 112 (19915)1 5 Okamoto, X-ray characterization of tung- Licci, F., H.J. Scheel and P. Tissot, De- sten single crystals grown by secondary termination of the eutectic composition recrystallization method 112 (1991) 368 by crystal growth and flux separation: Kawai, M., S. Watanabe and T. Hanada, example BaCuO,—CuO, 112 (1991) 600 Molecular beam epitaxy of Bi,Sr,CuO, Licci, F., C. Frigeri and H.J. Scheel, Effect of and Bi,Sr,Cagg5Srp;;Cu,0, ultra thin flux composition on crucible corrosion films at 300°C 112 (1991) 745 and aluminum distribution coefficient in Kayser, O., R. Westphalen, B. Opitz and P. YBCO single crystals 112 (19916)0 6 s44 Author index Liu, B., A.H. McDaniel and R.F. Hicks, strate temperature into Zn-doped In Modeling of the coupled kinetics and GaAIP grown by low-pressure MOCVD 112 (1991) 628 transport in the organometallic vapor- Nishimura, T., K. Kadoiwa, M. Miyashita, phase epitaxy of cadmium telluride 112 (1991) 192 H. Kumabe and T. Murotani, Crack-free Lu, K. and J.T. Wang, A micromechanism and low dislocation density GaAs-on-Si for crystallization of amorphous alloys. I. grown by 2-reactor MOCVD system 112 (1991) 791 An in situ TEM observation 112 (1991) 525 Nishizawa, J., see Sakurai 112 (1991) 153 Lu, S.C., see Wu 112 (1991) 803 Luftman, H.S., see Panish 112 (1991) 343 Lundager Madsen, H.E., On the surface en- Okamoto, A., see Furuhata 112(1991) 1 ergy of ionic crystals 112 (19914)5 8 Okamoto, K., see Katoh 112 (19913)6 8 Okamura, S., see Igasaki 112 (19917)9 7 Okashita, K., see Hirota 112 (1991) 55 Machida, H. and T. Fukuda, Difficulties en- Opitz, B., see Kayser 112 (19911)1 1 countered during the Czochralski growth Orazem, M.E., see Jansen 112 (19913)1 6 of TiO, single crystals 112 (19918)3 5 Maslow, V.V., see Borisov 112 (19914)6 3 Pain, G.N., see Gao 112 (19914)8 7 McCrary, V.R., D.L. Van Haren, J.L. Zilko, Pan Feng, see Huang 112 (19917)2 9 J. Blaha, S.E.G. Slusky, J.W. Lee, S.N.G. Panish, M.B., R.A. Hamm, D. Ritter, HLS. Chu, P. Thomas and V. Swaminathan, Luftman and C.M. Cotell, Redistribution Low pressure MOCVD in a vertical reac- of beryllium in InP and Gag47Ing53As tor: growth and characterization of In grown by hydride source molecular beam GaAsP on (100)InP for 1.3 um lasers 112 (1991) 39 epitaxy and metalorganic molecular beam McDaniel, A.H., see Liu 112 (19911)9 2 epitaxy 112 (19913)4 3 Melik-Adamyan, V.R., see Givargizov 112 (19917)5 8 Panizzieri, R., see Leccabue 112 (1991) 644 Metzener, Ph., see Hobbs 112 (19915)3 9 Paparazzo, E., see Leccabue 112 (19916)4 4 Meyer, H.J., see Helmrich 112 (19918)2 4 Petty, J.T., see Barber 112 (1991) 613 Mihailovic, see Chaput 112 (19916)9 1 Polychroniadis, E.K., see Assenov 112 (1991) 227 Mikheev, L.V. and A.A. Chernov, Mobility Pu Xin, see Qi 112 (1991) 580 of a diffuse simple crystal—melt interface 112 (19915)9 1 Py, M.A., see Baeta Moreira 112 (1991) 14 Mikulec, J., see Leitner 112 (19914)3 7 Mitrovi¢, M.M. and R.I. Risti¢é, Growth rate dispersion of small MnCl, -4H,O crys- Qi Lichang, Xuan Zhenwu, Yang Peichun, tals. I. Growth without a magnetic field 112 (1991) 160 Pu Xin and Hou Li, Presence of core Mitrovi¢é, M.M., Growth rate dispersion «+f particles in diamond crystals grown by small MnCl, - 4H,0 crystals. II. Growi:: electron assisted chemical vapor deposi- in a magnetic field 112 (19911)7 1 tion 112 (1991) 580 Miyadera, H., see Muranaka 112 (19918)0 8 Qian Zhi Qiang, see Cheng 112 (1991) 294 Miyashita, M., see Nishimura 112 (19917)9 1 Moriwaki, Y., see Iijima 112 (19914)6 7 Moriwaki, Y., see Iijima 112 (19915)7 1 Rzkennus, K., see Tappura 112 (1991) 27 Mosovsky, J., see Asom 112 (19915)9 7 Rashkovich, L.N. and B.Yu. Shekunov, Study Muranaka, Y., H. Yamashita, H. Miyadera of the growth mechanism of L-arginine and L. Breuilly, Synthesis of polycrystal- chloride monohydrate (LACh) crystals 112 (1991) 183 line diamond films in CO,/H, and Ren Zhifeng, M.J. Naughton, P. Lee and J.H. CO/CO,/H, systems 112 (19918)0 8 Wang, Growth of superconducting single Murotani, T., see Nishimura 112 (19917)9 1 crystals of T1,,Ba,Ca,,_,Cu,O, in a con- venient way 112 (19915)8 7 Risti¢, R.I., Mitrovié 112 (19911)6 0 Nakai, H., see Yokota 112 (19917)2 3 Ritter, D., see Panish 112 (19913)4 3 Nakajima, K., see Kusunoki 112 (1991) 33 Roberts, K.J., see Doyle 112 (19913)0 2 Nanev, Chr.N., Instability of faceted crystal Rodriguez, V., see Sun 112 (1991) 71 shapes growing under diffusion control 112 (19912)3 5 Rodway, G.H. and J.D. Hunt, Thermoelec- Naughton, M.J., see Ren 112 (19915)8 7 tric investigation of solidification of lead. Nayar, R.K., see Bindal 112 (1991) 386 I. Pure lead 112 (1991) 554 Nishikawa, Y., M. Ishikawa, H. Sugawara, G. Rodway, G.H. and J.D. Hunt, Thermoelec- Hatakoshi and Y. Kokubun, Anomalous tric investigation of solidification of lead. dependence of In incorporation on sub- II. Lead alloys 112 (1991) 563 Author index 845 Rubinstein, E.R. and M.E. Glicksman, Den- Su Genbo, see Huang 112 (19917)2 9 dritic growth kinetics and structure. I. Sugawara, H., see Nishikawa 112 (19916)2 8 Pivalic acid 112 (1991) 84 Sugita, Y., see Katoh 112 (1991) 368 Rubinstein, E.R. and M.E. Glicksman, Den- Sun, B.N., R. Boutellier, Ph. Sciau, E. Burk- dritic growth kinetics and structure. II. hardt, V. Rodriguez and H. Schmid, High Camphene 112 (1991) 97 temperature solution growth of perovskite Pb,CoWO, single crystals 112 (1991) 71 Suto, K., see Sakurai 112 (1991) 153 Sakurai, F., H. Fujishiro, K. Suto and J. Suzuki, M., M. Kagawa, Y. Syono and T. Nishizawa, ZnSe epitaxial growth by the Hirai, Thin films of rare-earth (Y, La, Ce, temperature difference method under Pr, Nd, Sm) oxides formed by the spray- controlled vapor pressure (TDM-—CVP) ICP technique 112 (19916)2 1 using Se solvent 112 (1991) 153 Swaminathan, V., see McCrary 112 (1991) 39 Satoh, K., see Yokota 112 (1991) 723 Syono, Y., see Suzuki 112 (19916)2 1 Scheel, H.J., see Licci 112 (19916)0 0 Scheel, H.J., see Licci 112 (1991) 606 Takamori, T. and J.J. Boland, On Schleich, D.M. and H.S.W. Chang, Iron pyrite and iron marcasite thin films prepared by pyrochlore-type bismuth platinum oxide 112 (19916)6 0 low pressure chemical vapor deposition 112 (19917)3 7 Takenaka, C., see Kusunoki 112 (1991) 33 Schmid, H., see Sun 112 (1991) 71 Takeuchi, H., see Ito 112 (1991) 427 Sciau, Ph., see Sun 112 (1991) 71 Tang Guang Kui, see Cheng 112 (1991) 294 Sebastian, M.T., see Bolt 112 (19917)7 3 Tang, H.P., J.Y. Feng, Y.D. Fan and H.D. Li, Growth of CdTe films on GaAs by Sebastian, P.J. and V. Sivaramakrishnan, The ionized cluster beam epitaxy 112 (19914)0 7 growth and characterization of CdSe x Tang Hong Gao, see Cheng 112 (1991) 294 Te, _, thin films 112 (19914)2 1 Tappura, K., T. Hakkarainen, K. Rakennus, Shamsuzzoha, M., L.M. Hogan, D.J. Smith M. Hovinen and H. Asonen, The in- and P.A. Deymier, A transmission and fluence of growth conditions on the com- high-resolution electron microscope study position of GalnAsP grown by gas-source of cozonally twinned growth of eutectic molecular beam epitaxy 112 (1991) 27 silicon in unmodified Al-Si alloys 112 (19916)3 5 Testa, A., see Leccabue 112 (19916)4 4 Sharma, K., see Bagai 112 (1991) 402 Thomas, P., see McCrary 112 (1991) 39 Shaw, L.B. and R.S.F. Chang, Rare earth Timmons, M.L., see Venkatasubramanian 112(1991) 7 doped YLF grown by laser-heated pedes- tal growth technique 112 (19917)3 1 Tissot, P., see Licci 112 (19916)0 0 Shekunov, B.Yu., see Rashkovich 112 (19911)8 3 Trauth, J. and B.C. Grabmaier, The shape of Sherwood, J.N., see Doyle 112 (19913)0 2 the crystal/melt interface during the Shiojiri, M., see Hirota 112 (1991) 55 growth of lithium niobate crystals by the Singh, B.P., see Bindal 112 (19913)8 6 Czochralski technique 112 (1991) 451 Singhal, S.K., see Bindal 112 (19913)8 6 Tsotsis, T.T., see Francis 112 (19914)7 4 Sivaramakrishnan, V., see Sebastian 112 (19914)2 1 Tuncel, E., see Baeta Moreira 112 (1991) 14 Slusky, S.E.G., see McCrary 112 (1991) 39 Smith, D.J., see Shamsuzzoha 112 (19916)3 5 Ueda, T., see Ueda 112 (1991) 507 Snail, K.A. and L.M. Hanssen, High temper- Ueda, Y., T. Ueda, M. Fukuoka and M. ature, high rate homoepitaxial growth of Ashida, Epitaxial growth of 2,5-distyryl- diamond in an atmospheric pressure flame 112 (19916)5 1 pyrazine from the vapor phase 112 (1991) 507 Sdhnel, O., I. Kfivankova, S. Krémaf and M. Uwai, K., Sequential self-limiting growth of Juréova, Gypsum crystals formed on de- CuO on MgO(100) by chemical vapor de- composing calcium citrate 112 (1991) 415 position 112 (1991) 298 Song Wen Bao, See Cheng 112 (1991) 294 Srivastava, M., see Bagai 112 (19914)0 2 Van der Mooren, M., see Bolt 112 (1991) 773 Steininger, R. and J.H. Bilgram, A_ light Van der Voort, E. and P. Hartman, The habit scattering study of the solid—liquid inter- of gypsum and solvent interaction 112 (1991) 445 face layer of cyclohexane crystals 112 (19912)0 1 Van Haren, D.L., see McCrary 112 (1991) 39 Stejskal, J., see Leitner 112 (19914)3 7 Van Saarloos, W., see Weeks 112 (19912)4 4 Stevens, R.L., see Barber 112 (19916)1 3 Venkatasubramanian, R., M.L. Timmons, S. Stevenson, A.W., see Gao 112 (19914)8 7 Bothra and J.M. Borrego, Optimization of Stobbs, W.M., see Baxter 112 (19913)7 3 the heteroepitaxy of Ge on GaAs for Stringfellow, G.B., see Li 112 (19915)1 5 minority-carrier lifetime 112(1991) 7 846 Author index Virzi, A., Computer modelling of heat trans- mance of the AlGaAs/InGaP single het- fer in Czochralski silicon crystal growth 112 (1991) 699 erostructure grown by liquid-phase epi- Vonka, P., see Leitner 112 (1991) 437 taxy 112 (1991) 803 Wakamatsu, N., see lijima 112 (19914)6 7 Xuan Zhenwuy, see Qi 112 (1991) 580 Walck, S.D., see Allerman 112 (19915)8 3 Yamashita, H., see Muranaka 112 (19918)0 8 Wang, J.H., see Ren 112 (19915)8 7 Yamauchi, H., see Igasaki 112 (19917)9 7 Wang, J.T., see Lu 112 (19915)2 5 Yang Peichun, see Qi 112 (19915)8 0 Watanabe, S., see Kawai 112 (19917)4 5 Yang, Y.C., see Wu 112 (19918)0 3 Watts, B.E., see Leccabue 112 (19916)4 4 Yokota, K., H. Nakai, K. Satoh and S. Weeks, J.D., W. van Saarloos and M. Grant, Katayama, Segregation coefficients and Stability and shapes of cellular profiles in activation of indium in cadmium telluride directional solidification: expansion and matching methods 112 (19912)4 4 grown from tellurium-rich melt by the Westphalen, R., see Kayser 112 (19911)1 1 Bridgman technique 112 (1991) 723 Wilkie, J.H., see Baxter 112 (19913)7 3 Young, T.L., see Healy 112 (1991) 287 Wilkins, S.W., see Gao 112 (19914)8 7 Zhang Hongwu, see Ji 112 (1991) 283 Witt, A.F., see Cao 112 (19918)3 8 Zhao Shuging, see Ji 112 (1991) 283 Wroblewski, T., see Doyle 112 (19913)0 2 Zilko, J.L., see McCrary 112 (1991) 39 Wu, M.C., S.C. Lu, C.Y. Lee and Y.C. Yang, Zilko, J.L., see Asom 112 (1991) 597 Interface abruptness and LED perfor- Journal of Crystal Growth 112 (1991) 847-850 North-Holland Subject index Adsorption 1, 146, 192, 298, 421, 445 by electrical methods 7, 111, 153, 227, 343, 402, 554, 563, Alloys 525, 539, 563, 635 587, 606, 723, 803 Aluminum by electroluminescence 803 — gallium arsenide 803 by electron diffraction 507, 525, 635 — organic 628 by electron microscopy 1, 47, 55, 84, 111, 227, 235, 287, 291, — silicon alloys 635 337, 359, 373, 386, 415, 421, 427, 474, 496, 507, 525, 583, Apparatus 621, 635, 651, 660, 731, 758, 803, 808 for thin film growth by ellipsometry 146 — by liquid phase epitaxy by emission 808 — — by temperature difference method, under controlled by infrared microscopy 838 vapor pressure by infrared spectroscopy 402 — — — of zinc selenide 153 by infrared thermography 699 — by uniform radial flow epitaxy by interferometry 183, 235 — — of III-V compounds 583 by light scattering 201 for miscellaneous purposes by magnetic properties 337, 587, 644 — reaction kinetics 474 by mass spectrometry 474, 515 — undercooling 554 by microwave lifetime 7 L-Arginine chloride monohydrate 183 by optical microscopy 1, 14, 33, 71, 153, 294, 337, 354, 402, Arsenic 463, 487, 531, 651, 737, 753, 758 — organic 575 by optical properties 283, 294 Arsine 597 by particle size distribution analysis 415 by photoluminescence 14, 39, 723, 791 Barium by Raman spectroscopy 651, 808 — oxide/ copper oxide eutectic 600, 606 by reflectance 368 Bismuth by reflection high energy electron diffraction 14, 146, 407, — platinum oxide 660 427, 745, 781 — strontium calcium cuprate 745 by second harmonic generation 283, 294 — strontium cuprate 745 by secondary ion mass spectrometry 343 Boron by thermal analysis 525, 600 — nitride 386 by X-ray methods 7, 39, 55, 71, 123, 153, 287, 291, 298, 302, 309, 337, 368, 386, 421, 487, 525, 587, 606, 621, 628, 644, 651, 660, 723, 737, 745, 773, 781, 797, 808, 819 Cadmium 235 — by X-ray photoemission spectroscopy 407, 421, 745, 808 manganese telluride 487 Chromium mercury telluride 402 — (III) oxide 427 organic 192 Computer simulation 699, 824 selenide telluride 421 Constitutional supercooling 244 telluride 192, 407, 723 Convection 84, 97, 451, 539, 835 Calcium Copper — hydroxyapatite 467, 571 — chloride 531 — phosphates 467, 571 — oxide 298, 600, 613 — sulphate dihydrate 415, 445 — selenide 55 Camphene 97 Cyclohexane 201 Cellular growth 463, 670 Characterization methods — by absorption spectroscopy 7 Dendritic growth 84, 97, 129, 463 — by Auger electron spectroscopy 39, 644, 745, 803 Devices 287, 309, 803 — by cathodoluminescence 153 Diamond 580, 651, 808 — by differential thermal analysis 600 Diffusional control 183, 201, 235, 781, 824 848 Subject index Dislocations 33, 39, 227, 354, 359, 402, 496, 773, 781, 791 — cobalt tungstate 71 Distribution coefficient 129, 160, 171, 244, 563, 606, 723 — telluride 227 Dopants 153, 343, 628, 731, 819 Lithium — niobate 451 Etching — triborate 283 — chemical 227, 294, 354, 402, 773, 791, 838 Eutectic growth 386, 635 Manganese — chloride 160, 171 Finite element method 699 Mathematical model 192, 244, 515 Melt growth technique Gallium 146 — by Bridgman-Stockbarger method arsenide 1, 14, 123, 316, 437, 474, 791, 838 — — of cadmium telluride 723 indium arsenide 343, 359 — — of lead telluride 227 indium arsenide phosphide 27 by Czochralski method indium phosphide 373 — of gallium arsenide 123 organic 1, 359, 474, 628 — of indium gallium arsenide 33 Germanium 7 — of lithium niobate 451 Gold 427 — of silicon 308, 699, 819 Grain boundary 227, 354 — of titanium dioxide 835 Gypsum 415, 445 by floating zone method — of lead telluride 227 Heat flow control 699, 835 — of titanium dioxide 354 Heterojunction 583, 803 by ion-exchange technique — of zinc selenide 781 Ice 129 by laser-heated pedesial growth Impurity 129, 227, 244, 308, 663, 723 — of lithium triborate 283 Indium — of yttrium lithium fluoride 731 gallium aluminum phosphide 628 by melt spinning gallium arsenide 33, 583 — of nickel phosphide 525 gallium arsenide phosphide 39 by uniaxial solidification gallium phosphide 39 — of alloys 539 organic 359, 628 — of succinonitrile 463 phosphide 111, 343, 583, 691 by zone melting selenide 797 — of cyclohexane 201 Interface 39, 129, 201, 359, 445, 451, 458, 463, 539, 554, 670, — of lead 554 699, 803, 819, 835 — of lead alloys 563 Ionic crystals 458 — of lead telluride 227 Iron theory of 591, 670 — disulphide 737 Mercury — gallate 644 — cadmium telluride 402 — pentacarbonyl 737 Morphological stability 129, 235, 244, 539, 670 Morphology of growth 7, 14, 39, 47, 71, 84, 97, 123, 153, 291, Kinetics 294, 337, 373, 386, 445, 463, 487, 496, 507, 571, 613, 635, of decomposition 415, 474 651, 660, 670, 773, 824, 835 of freezing hydrolysis 129 of growth 7, 27, 84, 97, 111, 129, 146, 160, 171, 192, 201, 294, 302, 309, 316, 407, 445, 467, 496, 515, 531, 554, 571, Nickel 591, 628, 651, 670, 691, 737, 753, 824 — phosphide 525 of interface control 407, 451, 670 Nonlinear optics 183 of ledge diffusion 824 Nucleation 291, 407, 496, 580, 758, 808 of nucleation 146, 407 Numbers of step formation 183 — Grashof 192, 451 — Peclet 84, 97, 244 Lasers 39, 283, 731 Prandtl 192 Lattice mismatch 33, 39, 309, 628, 781, 803 Rayleigh 201 Lead 554 Reynolds 192 — alloys 563 Schmidt 539 Subject index Organic crystals 84, 97, 201, 302, 463, 507, 729, 758 Spinel 644 Statistical mechanics, molecular theory 591 Perfection of crystals 71, 123, 153, 227, 354, 368, 402, 407, 421, Stefan problem or moving boundary problem 539, 699 487, 531, 587, 635, 791, 808, 838 Step 183, 496, 651 Periodic bond chain theory 613 Strain 359 Phase diagrams 129, 244, 531, 600, 663 Succinonitrile 463 Phenomenological theory 7, 235 Sulphur Pivalic acid 84 — organic 737 Potassium Superconductivity 337, 587, 606, 613 — bromide 235 — bulk 337, 587, 606, 613 — chloride 824 — characterization 587, 606 — dihydrogen phosphate 235 — crystal chemistry 337, 587 — titanyl phosphate 294, 309, 773 — high T, 337, 587, 606, 613 Proteins 758 — stoichiometry 337, 587, 606 Purification of materials 84, 97, 227, 531, 808 Supercooling, supersaturation 84, 97, 160, 171, 183, 287, 487, 496, 663, 729, 803 Quartz 291, 753 Superlattices 359, 791 Surface energy, determination of 84, 97, 458 Rare earth Surface processes 129, 474 — oxides 621 Surface structure 146, 183, 445, 487, 591, 644, 663, 781 Rutile 354 Segregation 723 Tellurium Silicon 287, 308, 635, 699 — organic 192 — dioxide 291 Thallium — germanium 287 — barium calcium cuprate 587 Silver 235 Thermodynamics 437, 458, 467, 644, 663, 691, 781 — telluride 55 Thin film growth Sodium by graphoepitaxy — chloride 496 — of proteins 758 Solar cells 421 by liquid phase epitaxy Solid growth technique — of aluminum gallium arsenide 803 — by polymorphic transformation — of potassium titanyl phosphate 309 — — of boron nitride 386 — of silicon 287 — by recrystallization — of silicon germanium 287 — — of tungsten 368 — of zinc selenide 153 — by topochemical reaction by metalorganic molecular beam epitaxy — — of titanium nitride 47 — of gallium arsenide 1 Solution growth technique — of gallium indium arsenide 343 by electrocrystallization — of indium phosphide 343 — of silver 235 by molecular beam epitaxy by flux method of bismuth strontium calcium cuprate 745 - of copper(I) chloride 531 of bismuth strontium cuprate 745 — of lead cobalt tungstate 71 of gallium 146 — of potassium titanyl phosphate 294, 773 of gallium arsenide 14, 597 — of yttrium barium cuprate 337, 606 - — of gallium indium arsenide 343 by hydrothermal growth of gallium indium arsenide phosphide 27 — of quartz 291, 753 of indium phosphide 343 by low temperature method by vapor phase epitaxy of L-arginine chloride monohydrate 183 — through chemical vapor deposition of calcium hydroxyapatite 467, 571 of copper oxide 298 of calcium phosphates 467, 571 of diamond 580, 808 of gypsum 415 of gallium indium phosphide 373 of manganese chloride 160, 171 of indium phosphide 691 of potassium bromide 235 of III-V compounds 583 of potassium dihydrogen phosphate 235 through combustion flame of urea 729 — of diamond 651 theory of 613 through evaporation and condensation Subjeci index of cadmium selenide telluride 421 Tungsten 368 of cadmium telluride 407 Twinning 337, 635 of chromium(III) oxide 427 of copper selenide 55 Urea 729 of gold 427 of indium selenide 797 of mercury cadmium telluride 402 Vapor growth technique of organic crystals 507 — by chemical transport of rare earth oxides 621 — — of iron gallate 644 of silver telluride 55 — by evaporation and condensation through metalorganic chemical vapor deposition — — of cadmium 235 of cadmium manganese telluride 487 — — of zinc 235 of cadmium telluride 192 of gallium arsenide 316, 437, 474, 791 of gallium indium arsenide 359 Whisker growth of indium gallium aluminum phosphide 628 — of titanium nitride 47 of indium gallium arsenide phosphide 39 of indium phosphide 111 Yttrium of iron disulphide 737 — barium cuprate 337, 613 theory of 192, 316, 437 — lithium fluoride 731 Three-— five (III-V) compounds 373, 583 Titanium — dioxide 354, 835 Zinc 235 — nitride 47 — selenide 153, 781